JP2018190961A5 - - Google Patents

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Publication number
JP2018190961A5
JP2018190961A5 JP2018072211A JP2018072211A JP2018190961A5 JP 2018190961 A5 JP2018190961 A5 JP 2018190961A5 JP 2018072211 A JP2018072211 A JP 2018072211A JP 2018072211 A JP2018072211 A JP 2018072211A JP 2018190961 A5 JP2018190961 A5 JP 2018190961A5
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JP
Japan
Prior art keywords
light
wavelength
backplane
optical
control
Prior art date
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Application number
JP2018072211A
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English (en)
Japanese (ja)
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JP2018190961A (ja
JP7073174B2 (ja
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Priority claimed from US15/582,296 external-priority patent/US10397529B2/en
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Publication of JP2018190961A publication Critical patent/JP2018190961A/ja
Publication of JP2018190961A5 publication Critical patent/JP2018190961A5/ja
Application granted granted Critical
Publication of JP7073174B2 publication Critical patent/JP7073174B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018072211A 2017-04-28 2018-04-04 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ Active JP7073174B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/582,296 US10397529B2 (en) 2017-04-28 2017-04-28 Transparent optical coupler active matrix array
US15/582,296 2017-04-28

Publications (3)

Publication Number Publication Date
JP2018190961A JP2018190961A (ja) 2018-11-29
JP2018190961A5 true JP2018190961A5 (enExample) 2021-11-04
JP7073174B2 JP7073174B2 (ja) 2022-05-23

Family

ID=61972336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018072211A Active JP7073174B2 (ja) 2017-04-28 2018-04-04 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ

Country Status (3)

Country Link
US (1) US10397529B2 (enExample)
EP (1) EP3401725A1 (enExample)
JP (1) JP7073174B2 (enExample)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS60193384A (ja) * 1984-03-15 1985-10-01 Toshiba Corp 光スイツチングデバイス及び光スイツチング表示装置
KR910007142A (ko) 1988-09-30 1991-04-30 미다 가쓰시게 박막 광트랜지스터와 그것을 사용한 광센서어레이
US5200634A (en) 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
US5264720A (en) 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US5028788A (en) 1990-04-03 1991-07-02 Electromed International Ltd. X-ray sensor array
US5083175A (en) 1990-09-21 1992-01-21 Xerox Corporation Method of using offset gated gap-cell thin film device as a photosensor
JP2878137B2 (ja) 1994-06-29 1999-04-05 シャープ株式会社 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
US7038242B2 (en) 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
US6885789B2 (en) 2002-06-07 2005-04-26 Fujitsu Limited Optical switch fabricated by a thin film process
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making
KR100916321B1 (ko) 2007-12-17 2009-09-11 한국전자통신연구원 유기 발광 다이오드 터치스크린 장치 및 그 제조 방법
US20140212085A1 (en) 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
US9986316B2 (en) * 2013-08-21 2018-05-29 Telefonaktiebolget Lm Ericsson (Publ) Optical switching
WO2015143011A1 (en) 2014-03-19 2015-09-24 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
US10192892B2 (en) 2015-05-29 2019-01-29 Palo Alto Research Center Incorporated Active matrix backplane formed using thin film optocouplers
US9946135B2 (en) 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch

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