JP7067907B2 - 固体撮像装置及び信号処理装置 - Google Patents

固体撮像装置及び信号処理装置 Download PDF

Info

Publication number
JP7067907B2
JP7067907B2 JP2017231686A JP2017231686A JP7067907B2 JP 7067907 B2 JP7067907 B2 JP 7067907B2 JP 2017231686 A JP2017231686 A JP 2017231686A JP 2017231686 A JP2017231686 A JP 2017231686A JP 7067907 B2 JP7067907 B2 JP 7067907B2
Authority
JP
Japan
Prior art keywords
signal
photoelectric conversion
conversion unit
phase difference
charge generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017231686A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019102967A (ja
JP2019102967A5 (https=
Inventor
理 小泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017231686A priority Critical patent/JP7067907B2/ja
Priority to US16/199,926 priority patent/US10630929B2/en
Publication of JP2019102967A publication Critical patent/JP2019102967A/ja
Publication of JP2019102967A5 publication Critical patent/JP2019102967A5/ja
Application granted granted Critical
Publication of JP7067907B2 publication Critical patent/JP7067907B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Automatic Focus Adjustment (AREA)
  • Studio Devices (AREA)
  • Focusing (AREA)
JP2017231686A 2017-12-01 2017-12-01 固体撮像装置及び信号処理装置 Active JP7067907B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017231686A JP7067907B2 (ja) 2017-12-01 2017-12-01 固体撮像装置及び信号処理装置
US16/199,926 US10630929B2 (en) 2017-12-01 2018-11-26 Solid-state imaging device and signal processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017231686A JP7067907B2 (ja) 2017-12-01 2017-12-01 固体撮像装置及び信号処理装置

Publications (3)

Publication Number Publication Date
JP2019102967A JP2019102967A (ja) 2019-06-24
JP2019102967A5 JP2019102967A5 (https=) 2021-01-21
JP7067907B2 true JP7067907B2 (ja) 2022-05-16

Family

ID=66659641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017231686A Active JP7067907B2 (ja) 2017-12-01 2017-12-01 固体撮像装置及び信号処理装置

Country Status (2)

Country Link
US (1) US10630929B2 (https=)
JP (1) JP7067907B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700824B (zh) * 2015-02-09 2020-08-01 日商索尼半導體解決方案公司 攝像元件及電子裝置
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
US11563910B2 (en) 2020-08-04 2023-01-24 Apple Inc. Image capture devices having phase detection auto-focus pixels
EP4270934B1 (en) 2021-02-10 2026-04-01 Samsung Electronics Co., Ltd. Electronic device comprising image sensor and method of operating same
US11546532B1 (en) 2021-03-16 2023-01-03 Apple Inc. Dynamic correlated double sampling for noise rejection in image sensors
US12192644B2 (en) 2021-07-29 2025-01-07 Apple Inc. Pulse-width modulation pixel sensor
US12069384B2 (en) 2021-09-23 2024-08-20 Apple Inc. Image capture devices having phase detection auto-focus pixels

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107835A (ja) 2012-11-29 2014-06-09 Canon Inc 撮像素子、撮像装置、および、撮像システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6053750B2 (ja) 2012-02-28 2016-12-27 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP6239975B2 (ja) * 2013-12-27 2017-11-29 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
JP2016131346A (ja) 2015-01-15 2016-07-21 キヤノン株式会社 制御装置、撮像装置、制御方法、プログラム、記憶媒体
JP6509018B2 (ja) 2015-04-17 2019-05-08 キヤノン株式会社 固体撮像装置、撮像システム及び信号処理方法
JP6650715B2 (ja) 2015-09-29 2020-02-19 キヤノン株式会社 撮像素子及びその制御方法、及び撮像装置
KR102524400B1 (ko) * 2016-07-04 2023-04-24 에스케이하이닉스 주식회사 하나의 컬러 필터 및 하나의 마이크로렌즈를 공유하는 다수 개의 포토다이오드들을 갖는 이미지 센서
JP6806494B2 (ja) 2016-08-24 2021-01-06 キヤノン株式会社 撮像装置、撮像システム、移動体及び撮像装置の駆動方法
JP6929114B2 (ja) 2017-04-24 2021-09-01 キヤノン株式会社 光電変換装置及び撮像システム
JP6904772B2 (ja) 2017-04-26 2021-07-21 キヤノン株式会社 固体撮像装置及びその駆動方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107835A (ja) 2012-11-29 2014-06-09 Canon Inc 撮像素子、撮像装置、および、撮像システム

Also Published As

Publication number Publication date
JP2019102967A (ja) 2019-06-24
US10630929B2 (en) 2020-04-21
US20190174085A1 (en) 2019-06-06

Similar Documents

Publication Publication Date Title
JP7067907B2 (ja) 固体撮像装置及び信号処理装置
JP6736539B2 (ja) 撮像装置及びその駆動方法
JP6987562B2 (ja) 固体撮像素子
US20200252570A1 (en) Photoelectric conversion apparatus
JP7342077B2 (ja) 光電変換装置
US11490041B2 (en) Photoelectric converter and imaging system
US10554913B2 (en) Solid-state imaging device, imaging system and movable object
JP7538618B2 (ja) 光電変換装置及び光電変換システム
JP2019133982A (ja) 撮像装置、撮像システム及び移動体
JP7299711B2 (ja) 光電変換装置及びその駆動方法
JP7019471B2 (ja) 固体撮像装置及び撮像システム
JP2019041352A (ja) 撮像装置及び撮像システム
US12309514B2 (en) Photoelectric conversion device and method of driving photoelectric conversion device
JP7587380B2 (ja) 光電変換装置、光電変換システム及び移動体
US10965896B2 (en) Photoelectric conversion device, moving body, and signal processing device
US12363463B2 (en) Photoelectric conversion device and method of driving photoelectric conversion device
JP7673121B2 (ja) 光電変換装置、光電変換システム、移動体、半導体基板
JP7077029B2 (ja) 光電変換装置、撮像システム、移動体
JP7458746B2 (ja) 光電変換装置、撮像システム及び移動体
US20250338032A1 (en) Photoelectric conversion device
US20250330726A1 (en) Photoelectric conversion apparatus and equipment
US20260025602A1 (en) Photoelectric conversion apparatus, imaging apparatus, and equipment
CN114679552B (zh) 光电转换装置、光电转换系统、移动体和半导体基板

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201130

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220331

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220428

R151 Written notification of patent or utility model registration

Ref document number: 7067907

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151