JP7067103B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 36
- 238000007789 sealing Methods 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Description
図1は、実施の形態にかかるパワー半導体モジュールを示す側面図である。パワー半導体モジュールは、パワー半導体チップ(不図示)を内部に有する封止部1と、パワー半導体チップと接続され、封止部1から外部に立設する接続端子3と、接続端子3に設けられた台座2とを備える。
図6は、実施例にかかるパワー半導体モジュールの根本部の高さとガイド部の高さを示す表である。この表は、実施例1~実施例3における根本部21の高さbと、ガイド部22の高さaと、それぞれの和a+bの値を示し、単位はmmである。ここで、実施例1は、a/(a+b)が、0.05以上0.50以下の例であり、実施例2は、より好ましい0.10以上0.30以下の例であり、実施例3は、さらに好ましい0.15以上0.25以下の例である。
2、102 台座
3、103 接続端子
4、104 配線板
6、106 平坦部
7、107 スルーホール
11 締結部
21 根本部
211 上部根本部
212 下部根本部
22 ガイド部
Claims (6)
- 半導体素子を内部に有する封止部と、
前記半導体素子と電気的に接続され、前記封止部から外部に立設する接続端子と、
前記接続端子に設けられた台座と、
を備え、
前記台座は、前記封止部に設けられた根本部と、前記根本部上に設けられた傾斜部を有するガイド部と、からなり、
前記根本部が前記封止部の表面となす角度は、前記傾斜部が前記根本部の表面となす角度以上であることを特徴とする半導体装置。 - 前記ガイド部の上面に平坦部が設けられていないことを特徴する請求項1に記載の半導体装置。
- 前記傾斜部が前記根本部の表面となす角度は、30°より大きく、90°より小さいことを特徴とする請求項1または2に記載の半導体装置。
- 前記根本部が前記封止部の表面となす角度は、30°より大きく、90°以下であることを特徴とする請求項1~3のいずれか一つに記載の半導体装置。
- 前記傾斜部の高さと前記根本部の高さとの和に対する前記傾斜部の高さの比は、0.05以上で0.50未満であることを特徴とする請求項1~4のいずれか一つに記載の半導体装置。
- 半導体素子と電気的に接続された接続端子を立設する第1工程と、
樹脂を注入し、前記半導体素子を内部に封入し、前記接続端子に、前記樹脂上の根本部と、前記根本部上の傾斜部を有するガイド部と、からなる台座を形成する第2工程と、
を含むことを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018024562A JP7067103B2 (ja) | 2018-02-14 | 2018-02-14 | 半導体装置および半導体装置の製造方法 |
US16/241,099 US10966322B2 (en) | 2018-02-14 | 2019-01-07 | Semiconductor device and manufacturing method of semiconductor device |
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JP2018024562A JP7067103B2 (ja) | 2018-02-14 | 2018-02-14 | 半導体装置および半導体装置の製造方法 |
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Publication Number | Publication Date |
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JP2019140334A JP2019140334A (ja) | 2019-08-22 |
JP7067103B2 true JP7067103B2 (ja) | 2022-05-16 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013145619A1 (ja) | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016174112A (ja) | 2015-03-18 | 2016-09-29 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
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JPS511592B2 (ja) | 1971-08-27 | 1976-01-19 | ||
JPS5222880A (en) * | 1975-08-15 | 1977-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Integrated circuit package |
US4677526A (en) * | 1984-03-01 | 1987-06-30 | Augat Inc. | Plastic pin grid array chip carrier |
US6896526B2 (en) * | 1999-12-20 | 2005-05-24 | Synqor, Inc. | Flanged terminal pins for DC/DC converters |
KR101463075B1 (ko) * | 2008-02-04 | 2014-11-20 | 페어차일드코리아반도체 주식회사 | 히트 싱크 패키지 |
JP5101592B2 (ja) | 2009-12-03 | 2012-12-19 | 三菱電機株式会社 | パワーモジュールの製造方法 |
US9119327B2 (en) * | 2010-10-26 | 2015-08-25 | Tdk-Lambda Corporation | Thermal management system and method |
EP2908338A4 (en) | 2012-10-15 | 2016-07-13 | Fuji Electric Co Ltd | SEMICONDUCTOR COMPONENT |
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WO2013145619A1 (ja) | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016174112A (ja) | 2015-03-18 | 2016-09-29 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
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