JP7023851B2 - ガラスまたはポリマーからなる前層と隆起部を有する裏層とを備える軽量光起電モジュール - Google Patents
ガラスまたはポリマーからなる前層と隆起部を有する裏層とを備える軽量光起電モジュール Download PDFInfo
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- JP7023851B2 JP7023851B2 JP2018544413A JP2018544413A JP7023851B2 JP 7023851 B2 JP7023851 B2 JP 7023851B2 JP 2018544413 A JP2018544413 A JP 2018544413A JP 2018544413 A JP2018544413 A JP 2018544413A JP 7023851 B2 JP7023851 B2 JP 7023851B2
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- 239000011521 glass Substances 0.000 title claims description 35
- 229920000642 polymer Polymers 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 268
- 238000007789 sealing Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 238000010030 laminating Methods 0.000 claims description 22
- -1 polyethylene terephthalate Polymers 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000004952 Polyamide Substances 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 229920002647 polyamide Polymers 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 12
- 239000002861 polymer material Substances 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 9
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- 239000003365 glass fiber Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 claims description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 4
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920006254 polymer film Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- QYMGIIIPAFAFRX-UHFFFAOYSA-N butyl prop-2-enoate;ethene Chemical compound C=C.CCCCOC(=O)C=C QYMGIIIPAFAFRX-UHFFFAOYSA-N 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 claims description 2
- 229920006245 ethylene-butyl acrylate Polymers 0.000 claims description 2
- 229920000554 ionomer Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920006124 polyolefin elastomer Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 229920001780 ECTFE Polymers 0.000 claims 1
- 229920006225 ethylene-methyl acrylate Polymers 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 15
- 229920002620 polyvinyl fluoride Polymers 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 229920001971 elastomer Polymers 0.000 description 7
- 239000002033 PVDF binder Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 6
- 230000002787 reinforcement Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000011152 fibreglass Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 239000012779 reinforcing material Substances 0.000 description 3
- VSKJLJHPAFKHBX-UHFFFAOYSA-N 2-methylbuta-1,3-diene;styrene Chemical compound CC(=C)C=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 VSKJLJHPAFKHBX-UHFFFAOYSA-N 0.000 description 2
- 229920005440 Altuglas® Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 2
- 238000003426 chemical strengthening reaction Methods 0.000 description 2
- 229920005996 polystyrene-poly(ethylene-butylene)-polystyrene Polymers 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229920006132 styrene block copolymer Polymers 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- 229920007925 Ethylene chlorotrifluoroethylene (ECTFE) Polymers 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 229920001112 grafted polyolefin Polymers 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
‐光束を受光する光起電モジュールの前面を形成する第1の透明層と、
‐並設されかつ互いに電気的に接続された複数の光起電セルと、
‐前記複数の光起電セルを封止するアセンブリと、
‐前記光起電モジュールの裏面を形成する第2の層であって、封止アセンブリと接触する内表面および前記内表面と反対側の外表面を備え、前記封止アセンブリおよび前記複数の光起電セルが前記第1の層と前記第2の層との間に配置されている、第2の層と、を備える光起電モジュールであって、
前記第1の層がガラスおよび/または少なくとも1つのポリマー材料からなり、その厚さが1.1mmと同等またはそれ未満であり、
前記第2の層の前記内表面が略平面であり、
前記第2の層が前記第2の層の前記外表面の上に隆起部をさらに備え、前記外表面および前記隆起部が共に前記光起電モジュールの可視裏側外面を画定することを特徴とするモジュールである。
a)少なくとも10分間と同等の積層サイクル時間の間、120℃と同等またはそれを超える温度で、第1の層と、封止アセンブリと、光起電セルと、第1の裏層とによって形成されたアセンブリを加熱積層して光起電積層体を得るステップ。
b)接着層を利用して、前記光起電積層体上、特に第1の裏層上に第2の裏層を組み立てるステップ。
さらに、図面をより容易に理解できるようにするために、図面に示される別々の部分は必ずしも同一スケールではない。
図3、4A、4B、および5Aから5Dは本発明の第1の実施形態に言及し、図6、7、8Aおよび8Bは本発明の第2の実施形態に言及する。
最初に、本発明による光起電モジュール1を図示する第1の実施形態の断面分解図である図3を参照する。
図6は、本発明による光起電モジュール1を表す第2の実施形態の断面分解図である。
2 第1の層
3 封止アセンブリ
4 光起電セル
5 第2の層
5a 第1の裏層
5b 第2の裏層
6 接続導体
7 ジャンクションボックス
8i 内表面
8e 外表面
9 隆起部
9a 主長尺リブ
9b 副長尺リブ
10 接着層
13 取付点
Claims (32)
- 光束を受光する光起電モジュール(1)の前面を形成する第1の透明層(2)と、
並設されかつ互いに電気的に接続された複数の光起電セル(4)と、
前記複数の光起電セル(4)を封止するアセンブリ(3)と、
前記光起電モジュール(1)の裏面を形成する第2の層(5)であって、封止アセンブリ(3)と接触する内表面(8i)および前記内表面(8i)と反対側の外表面(8e)を備え、前記封止アセンブリ(3)および前記複数の光起電セル(4)が前記第1の透明層(2)と前記第2の層(5)との間に配置されている、第2の層(5)と、
を備える光起電モジュール(1)であって、
前記第1の透明層(2)がガラスおよび/または少なくとも1つのポリマー材料からなり、その厚さ(e2)が1.1mmと同等またはそれ未満であり、
前記第2の層(5)の前記内表面(8i)が略平面であり、
前記第2の層(5)が前記第2の層(5)の前記外表面(8e)の上に隆起部(9)をさらに備え、前記外表面(8e)および前記隆起部(9)が共に前記光起電モジュール(1)の可視裏側外面を画定し、前記第2の層(5)の前記外表面(8e)の隆起部(9)が長尺リブの形態であり、
少なくとも1つの第1の長尺リブ(9a1,9a3)が前記第2の層(5)の外表面(8e)の外周(Pi)の第1の角(CO1)から延び、少なくとも1つの第2の長尺リブ(9a2,9a4)が前記第2の層(5)の外表面(8e)の外周(Pi)の第2の角(CO2)から延び、前記第1の角(CO1)および前記第2の角(CO2)が前記第2の層(5)の外表面(8e)の外周(Pi)の連続した角であり、前記少なくとも1つの第1の長尺リブ(9a1,9a3)および第2の長尺リブ(9a2,9a4)が、少なくとも1つの交差点(P1,P2,P3)で交差するように互いに向かって延びていることを特徴とする、モジュール。 - 前記第1の透明層(2)がガラス製であることを特徴とする、請求項1に記載のモジュール。
- 前記第1の透明層(2)が、ポリカーボネート(PC)、ポリメチルメタクリレート(PMMA)、ポリエチレンテレフタレート(PET)、ポリアミド(PA)、フッ素化ポリマー、エチレンテトラフルオロエチレン(ETFE)、エチレンクロロトリフルオロエチレン(ECTFE)、ポリテトラフルオロエチレン(PTFE)および/またはポリクロロトリフルオロエチレン(PCTFE)の中から選択された少なくとも1つのポリマー材料から作られていることを特徴とする、請求項1に記載のモジュール。
- 第1の裏層(5a)が前記封止アセンブリと第2の裏層(5b)との間に配置されるように、前記第2の層(5)が、前記封止アセンブリ(3)と接触する少なくとも1つの第1の裏層(5a)と第2の三次元裏層(5b)とのアセンブリ(5)から構成され、前記第2の層(5)の前記内表面が前記封止アセンブリ(3)と接触する前記第1の裏層(5a)の内表面(8i)によって形成されており、前記第2の層(5)の外表面が、外表面(8e)から突出する隆起部(9)を備える前記第2の裏層(5b)の外表面(8e)によって形成されている、請求項1から3のいずれか一項に記載のモジュール。
- 前記第2の層(5)が、前記第2の裏層(5b)を前記第1の裏層(5a)と組み立てるために前記第1の裏層(5a)と前記第2の裏層(5b)との間に接着層(10)をさらに備えることを特徴とする、請求項4に記載のモジュール。
- 前記第1の裏層(5a)が単層または多層ポリマーフィルムであることを特徴とする、請求項4または5に記載のモジュール。
- 前記第1の裏層(5a)の厚さ(e5a)が150から600μmの間であることを特徴とする、請求項4から6のいずれか一項に記載のモジュール。
- 前記第2の裏層(5b)が、ポリマー/ガラス繊維タイプの少なくとも1つの複合材料から作られていることを特徴とする、請求項4から7のいずれか一項に記載のモジュール。
- 前記第2の裏層(5b)が、その外表面(8e)上に前記外表面(8e)から突出する隆起部(9)を備え、前記第2の裏層(5b)は、前記隆起部(9)の相補的形状を有する、前記第2の裏層(5b)の内表面(11i)上に作られた凹部(12)を含むことを特徴とする、請求項4から8のいずれか一項に記載のモジュール。
- 前記第2の裏層(5b)が、前記光起電モジュール(1)を支持横材に固定して、前記支持横材を分離することができるように構成された光起電モジュールのパネルを形成する複数の取付点(13)を備えることを特徴とする、請求項4から9のいずれか一項に記載のモジュール。
- 前記第2の層(5)が、前記封止アセンブリ(3)と接触する1層の三次元裏層(5)から構成され、前記三次元裏層(5)の内表面(8i)が略平面であり、前記三次元裏層(5)の外表面(8e)が前記外表面(8e)の上に隆起部(9)を形成していることを特徴とする、請求項1から3のいずれか一項に記載のモジュール。
- 前記三次元裏層(5)が、ポリアミド/ガラス繊維タイプの少なくとも1つの複合材料から作られていることを特徴とする、請求項11に記載のモジュール。
- その単位面積当たりの重量が、7kg/m2と同等またはそれ未満であることを特徴とする、請求項1から12のいずれか一項に記載のモジュール。
- 前記第2の裏層(5b)の単位面積当たりの重量が、2kg/m2と同等またはそれ未満であることを特徴とする、請求項4から10のいずれか一項に記載のモジュール。
- 前記三次元裏層(5)の各々の単位面積当たりの重量が、2kg/m 2 と同等またはそれ未満であることを特徴とする、請求項11または12に記載のモジュール。
- 前記隆起部(9)の幅(E1,E2)が、5から60mmの間であることを特徴とする、請求項1から15のいずれか一項に記載のモジュール。
- 前記隆起部(9)がいわゆる主長尺リブ(9a)と、いわゆる副長尺リブ(9b)とを備え、副リブ(9b)の幅(E2)が主リブ(9a)の幅(E1)未満であることを特徴とする、請求項1から16のいずれか一項に記載のモジュール。
- 前記主リブ(9a)の幅(E1)が、20から60mmの間であることを特徴とする、請求項17に記載のモジュール。
- 前記副リブ(9b)の幅(E2)が、5から20mmの間であることを特徴とする、請求項17または18に記載のモジュール。
- 前記隆起部(9)の少なくとも一部が、少なくとも部分的に前記第2の層(5)の外表面(8e)の外周フレームを形成するように、前記第2の層(5)の外表面(8e)の外周(Pi)上に位置していることを特徴とする、請求項1から19のいずれか一項に記載のモジュール。
- 前記光起電モジュール(1)の使用に必要な配線を収容するジャンクションボックス(7)を組み込むために隆起部(9)のないスペース(ES)を残すように、この外周フレームが部分的であることを特徴とする、請求項20に記載のモジュール。
- 前記光起電モジュール(1)を支持横材に固定して前記第2の層(5)の外表面(8e)の外周の周りに光起電モジュールのパネルを形成するために使用される、互いに面する少なくとも2つの取付点(13)を通過する軸(T)上に前記少なくとも1つの交差点(P1,P2,P3)が位置していることを特徴とする、請求項21に記載のモジュール。
- 前記封止アセンブリ(3)が、酸コポリマー、イオノマー、ポリエチレン酢酸ビニル(EVA)、ポロビニルブチラール(PVB)、ポリウレタン、ポリ塩化ビニル、低密度直鎖状ポリエチレン、ポリオレフィンエラストマコポリマー、エチレンメチルアクリレートコポリマー、エチレンブチルアクリレートコポリマー、シリコーンエラストマー、および/またはエポキシ樹脂から選択された少なくとも1つのポリマー材料からなることを特徴とする、請求項1から22のいずれか一項に記載のモジュール。
- 前記封止アセンブリ(3)が、その間に前記光起電セル(4)が配置される2層のポリ(エチレン‐酢酸ビニル)(EVA)から作られていることを特徴とする、請求項23に記載のモジュール。
- 前記光起電セル(4)が、単結晶シリコン(c-Si)および/または多結晶シリコン(mc-Si)系のホモ接合またはヘテロ接合光起電セル、および/またはアモルファスシリコン(a-Si)、微結晶シリコン(μC-Si)、テルル化カドミウム(CdTe)、セレン化銅インジウム(CIS)、および二セレン化銅インジウムガリウム(CIGS)のうちの少なくとも1つの材料を含む光起電セルから選択されることを特徴とする、請求項1から24のいずれか一項に記載のモジュール。
- 前記光起電セル(4)の厚さが1から300μmの間であることを特徴とする、請求項1から25のいずれか一項に記載のモジュール。
- 前記光起電モジュール(1)の動作に必要な配線を収容するジャンクションボックス(7)をさらに備えることを特徴とする、請求項1から26のいずれか一項に記載のモジュール。
- 120℃と同等またはそれを超える温度で少なくとも10分間の積層サイクル時間で前記光起電モジュール(1)を形成する層(2,3,4,5)の少なくともいくつかを加熱積層するステップを含むことを特徴とする、請求項1から27のいずれか一項に記載光起電モジュール(1)を製造する方法。
- 請求項4から10のいずれか一項に記載の光起電モジュール(1)を製造するために使用され、
a)前記第1の透明層(2)と、前記封止アセンブリ(3)と、前記光起電セル(4)と、前記第1の裏層(5a)とによって形成されたアセンブリを120℃と同等またはそれを超える温度で、少なくとも10分間の積層サイクル時間で加熱積層して光起電積層体を得るステップと、
b)接着層(10)を使用して、前記光起電積層体上に前記第2の裏層(5b)を組み立てるステップと、
の2つの連続したステップを含むことを特徴とする、請求項28に記載の方法。 - 請求項11または12に記載の光起電モジュール(1)を製造するために使用され、
前記第1の透明層(2)と、前記封止層(3)と、前記光起電セル(4)と、前記第2の層(5)とによって形成されたアセンブリを120℃と同等またはそれを超える温度で、少なくとも10分間の積層サイクル時間で加熱積層する1つのステップを含むことを特徴とする、請求項28に記載の方法。 - 積層する1つのステップの間に、前記第2の層(5)の外表面(8e)上の前記隆起部(9)によって形成されたレリーフと逆の形状を有する、前記第2の層(5)の外表面(8e)と接触する支持型を使用することを特徴とする、請求項30に記載の方法。
- 前記支持型が少なくとも1つの金属材料から作られていることを特徴とする、請求項31に記載の方法。
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Publication number | Publication date |
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WO2017085021A1 (fr) | 2017-05-26 |
FR3043841A1 (fr) | 2017-05-19 |
EP3378102B1 (fr) | 2020-09-09 |
FR3043841B1 (fr) | 2018-09-21 |
CN108352419A (zh) | 2018-07-31 |
EP3378102A1 (fr) | 2018-09-26 |
US10546966B2 (en) | 2020-01-28 |
CN108352419B (zh) | 2022-01-18 |
KR102687899B1 (ko) | 2024-07-24 |
US20180331241A1 (en) | 2018-11-15 |
JP2018533852A (ja) | 2018-11-15 |
KR20180083410A (ko) | 2018-07-20 |
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