JP7022715B2 - 接合材及び炭化珪素系ハニカム構造体 - Google Patents
接合材及び炭化珪素系ハニカム構造体 Download PDFInfo
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- JP7022715B2 JP7022715B2 JP2019061681A JP2019061681A JP7022715B2 JP 7022715 B2 JP7022715 B2 JP 7022715B2 JP 2019061681 A JP2019061681 A JP 2019061681A JP 2019061681 A JP2019061681 A JP 2019061681A JP 7022715 B2 JP7022715 B2 JP 7022715B2
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- silicon carbide
- based honeycomb
- honeycomb structure
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- bonding layer
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- C04B38/0006—Honeycomb structures
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- B01D39/20—Other self-supporting filtering material ; Other filtering material of inorganic material, e.g. asbestos paper, metallic filtering material of non-woven wires
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Description
このような用途に用いられるハニカム構造体としては、例えば、複数の炭化珪素系ハニカムセグメントと、各炭化珪素系ハニカムセグメントの側面間を接合する接合層とを備える炭化珪素系ハニカム構造体が知られている。ここで、炭化珪素系ハニカム構造体とは、炭化珪素を主成分とする材質のハニカム構造体を意味し、再結晶SiCのように炭化珪素のみからなる材質や、炭化珪素と、金属珪素、ガラスなどの他の成分とが複合化した材質のハニカム構造体が包含される。接合層は、炭化珪素粉末やアルミナ粉末などの無機粉末、ムライト繊維などの無機繊維、中空粒子などの造孔剤、バインダ、分散剤などを含む接合材を用いて形成される(例えば、特許文献1)。
そのため、炭化珪素系ハニカム構造体の接合層の形成に用いられる接合材は、接合強度が高く且つヤング率が低くなるようにすべく、使用される成分の種類や含有量が細かく規定されており、炭化珪素系ハニカムセグメントや炭化珪素系ハニカム構造体の製造時に発生する加工粉を接合材において有効利用することは難しいと考えられていた。
ここで、炭化珪素系ハニカム構造体の斜視図及びその部分拡大図を図1に示す。図1に示されるように、炭化珪素系ハニカム構造体10は、複数の炭化珪素系ハニカムセグメント1と、複数の炭化珪素系ハニカムセグメント1の側面間を接合する接合層2とを備える。接合層2は、接合材の硬化層である。
1つの実施態様において、炭化珪素系ハニカムセグメント1は、一方の端面から他方の端面まで延びる複数のセル3を区画形成する隔壁4を備える。炭化珪素系ハニカムセグメント1のセル3が延びる方向に垂直な断面の形状としては、特に限定されず、三角形、四角形、六角形、八角形などの各種形状であることができるが、四角形(正方形又は長方形)であることが好ましい。このような形状の炭化珪素系ハニカムセグメント1とすることにより、炭化珪素系ハニカム構造体10の製造が容易になる。
また、炭化珪素系ハニカムセグメント1のセル3の形状(セル3が延びる方向に垂直な断面におけるセル3の形状)としては、特に限定されず、三角形、四角形、六角形、八角形、円形などの各種形状であることができるが、四角形(正方形又は長方形)であることが好ましい。
造孔材としては、焼成後に気孔となるものであれば特に限定されないが、澱粉、発泡樹脂、吸水性樹脂、シリカゲル、炭素などが挙げられる。これらは、単独又は2種以上を組み合わせて用いることができる。
ここで、本明細書において、平均粒径D50とは、レーザー回折・散乱法によって求めた累積粒度分布(体積基準)における積算値50%での粒径を意味する。
また、加工粉の平均粒径D90は、特に限定されないが、好ましくは4~150μm、より好ましくは5~130μm、さらに好ましくは6~120μmである。このような範囲に加工粉の平均粒径D10を制御することにより、接合強度とヤング率とのバランスが良好な接合層2が形成され易くなる。
ここで、本明細書において、平均粒径D10及びD90とは、平均粒径D50と同様にレーザー回折・散乱法によって求めた累積粒度分布(体積基準)における積算値10%及び90%での粒径をそれぞれ意味する。
これらの成分としては、特に限定されず、当該技術分野において公知のものを用いることができる。また、これらの成分は、炭化珪素系ハニカムセグメント1に用いられる成分と同一であっても異なっていてもよいが、炭化珪素系ハニカムセグメント1に用いられる成分と同一とすることにより、接合強度及びヤング率が良好な接合層2が形成され易くなる。
具体的には、炭化珪素系ハニカムセグメント1の側面に接合材を塗布して炭化珪素系ハニカムセグメント1の側面間を接合した後、乾燥させることにより、接合材を硬化させて接合層2を形成することができる。乾燥条件としては、接合材の組成に応じて適宜調整すればよいが、60~170℃で0.5~6.0時間乾燥させることが好ましい。また、乾燥は、外部から圧力を加えることにより、炭化珪素系ハニカムセグメント1同士を圧着させながら行ってもよい。
また、全ての炭化珪素系ハニカムセグメント1が接合層2を介して接合された接合体は、必要に応じ、外周部を研削加工するなどして、円柱状などの所望形状に加工してもよい。この場合、加工により外周壁が除去され、内部の隔壁4とセル3が露出した状態となるため、露出面をコーティング材で被覆するなどして外周コート層5を再形成することが好ましい。
原料として、炭化珪素粉末及び金属珪素粉末を80:20の質量割合で混合し、これに造孔材、バインダ、界面活性剤及び水を加えて混合及び混練して坏土とした。次に、得られた坏土を押出成形して切断し、マイクロ波及び熱風で乾燥することにより、隔壁の厚さが300μm、セル密度が46.5セル/cm2、セルが延びる方向に垂直な断面が一辺38mmの正四角形、長さが152mmの炭化珪素系ハニカムセグメントを得た。
次に、この炭化珪素系ハニカムセグメントは、端面が市松模様を呈するように、各セルの一方の端部を目封止した。なお、セルの端部を目封止するための目封止用スラリーには、ハニカムセグメント原料と同様の材料を用いた。目封止は、充填材を乾燥させた後、炭化珪素系ハニカムセグメントを大気雰囲気中にて400℃で脱脂した後、Ar不活性雰囲気中にて1450℃で焼成することによって行った。
表1に示す割合の加工粉、無機粉末、無機繊維、バインダ、造孔剤及び分散剤、並びに残部(合計で100質量%となる割合)の水を配合して混合することによってペースト状の接合材を調整した。加工粉としては、上記の炭化珪素系ハニカムセグメントの切削粉及びその不良品の粉砕粉を使用した。
炭化珪素系ハニカムセグメントの側面に、厚さ1mmとなるように接合材を塗布し、別の炭化珪素系ハニカムセグメントの側面と接合した。この工程を繰り返して、縦4個×横4個の炭化珪素系ハニカムセグメントを接合した合計16個の炭化珪素系ハニカムセグメント積層体を作製した。その後、外部から圧力を加えることにより、炭化珪素系ハニカムセグメント同士を圧着させながら、120℃で2時間乾燥させて接合体を得た。次に、得られた接合体の中心軸に垂直な方向の断面が円形となるように、接合体の外周を切削加工した。次に、その加工面に接合材と同じ組成の外周コーティング材を塗布した後、600℃で0.5時間以上加熱することで乾燥及び硬化させて外周コート層を形成し、炭化珪素系ハニカム構造体を得た。
(1)接合層の接着強度(せん断強度)
炭化珪素系ハニカム構造体から2本の炭化珪素系ハニカムセグメントが接合されたサンプルを切り出した。次に、このサンプルの接合層のY軸方向(長手方向)にせん断荷重をかけた。そして、そのときの破壊荷重と接合層の面積とを用いて下記式(1)により、せん断強度を算出した。
σ=(W/S)×1000 ・・・(1)
σ:せん断強度(kPa)
W:破壊荷重(N)
S:接合層の面積(mm2)
炭化珪素系ハニカム構造体から接合層部分を含む所定の寸法(直径25.4mm、厚さ3mm)の円柱状のサンプルを切り出した。その後、このサンプルについて、Z軸方向の圧縮試験を行った。ここで、「Z軸方向」とは、接合層における炭化珪素系ハニカムセグメントとの接合面に垂直な方向である。なお、この試験に際し、上記サンプルには、炭化珪素系ハニカムセグメントの一部が付いていてもかまわない。Z軸方向において、荷重を0~3MPaまで試料に加えた時の応力-ひずみ曲線における傾きをヤング率(圧縮ヤング率)として、下記式(2)により算出した。
E=(W/S)×(t/Δt) ・・・(2)
E:圧縮ヤング率(MPa)
W:荷重(N)
S:サンプルの面積(mm2)
t:サンプルの厚さ(mm)
Δt:サンプルの厚さの変化量
接合層の気孔率は、炭化珪素系ハニカム構造体から接合層部分を切り出し、水銀ポロシメータ(マイクロメリティクス社製オートポアIV9500)を用いて測定した。
炭化珪素系ハニカム構造体の作製に用いた接合材から接合層のサンプルを別途作製して熱膨張係数を評価した。接合層のサンプルは、接合材を140℃で2時間乾燥させて得られた乾燥体を縦3mm×横3mm×長さ20mmに切り出して得た。また、熱膨張係数は、JIS R1618:2002に準拠し、サンプルの長さ方向における40~800℃での平均線熱膨張係数(熱膨張係数)を測定した。
乾燥クラックは、炭化珪素系ハニカム構造体の端面における接合層を目視観察することで行った。乾燥クラックが全く発見されなかったものを「A」、長さが5mm以下の微小な乾燥クラックのみが発見されたものを「B」、長さが5mmを超える乾燥クラックが発見されたものを「C」と表す。
接合層の接合幅は、炭化珪素系ハニカム構造体の端面における接合層の接合幅を測定することによって行った。接合幅が1.5mm以下であったものを「A」、接合幅が1.5mm超過3.0mm未満であったものを「B」、接合幅が3.0mm以上であったものを「C」と表す。
上記の各評価結果を表1に示す。
また、表1に示されるように、加工粉の含有量及び平均粒径D50を所定の範囲に制御した接合材を用いて作製された実施例1~15の炭化珪素系ハニカム構造体は、加工粉の含有量が所定の範囲外の接合材又は加工粉の平均粒径D50が所定の範囲外の接合材を用いて作製された比較例2~4の炭化珪素系ハニカム構造体に比べて接合層の接合強度が高くなった。なお、実施例1~15の炭化珪素系ハニカム構造体は、比較例2~4の炭化珪素系ハニカム構造体に比べて接合層のヤング率が高くなったものの、使用可能なレベルであった。
2 接合層
3 セル
4 隔壁
5 外周コート層
10 炭化珪素系ハニカム構造体
Claims (9)
- 複数の炭化珪素系ハニカムセグメントの側面を接合して炭化珪素系ハニカム構造体を製造するために用いられる接合材であって、
前記炭化珪素系ハニカムセグメント及び/又は前記炭化珪素系ハニカム構造体の加工粉を0.1~50質量%含有し、
前記加工粉の平均粒径D50が0.5~60μmである接合材。 - 前記加工粉のD10が0.1~10μmである、請求項1に記載の接合材。
- 前記加工粉のD90が4~150μmである、請求項1又は2に記載の接合材。
- 無機粉末、無機繊維、造孔材、バインダ及び分散剤から選択される1種以上をさらに含有する、請求項1~3のいずれか一項に記載の接合材。
- 複数の炭化珪素系ハニカムセグメントと、複数の前記炭化珪素系ハニカムセグメントの側面間を接合する接合層とを備える炭化珪素系ハニカム構造体であって、
前記接合層が、請求項1~4のいずれか一項に記載の接合材の硬化層である炭化珪素系ハニカム構造体。 - 前記接合層の接合強度が200~2000kPaである、請求項5に記載の炭化珪素系ハニカム構造体。
- 前記接合層のヤング率が4~100MPaである、請求項5又は6に記載の炭化珪素系ハニカム構造体。
- 前記接合層の気孔率が40~85%である、請求項5~7のいずれか一項に記載の炭化珪素系ハニカム構造体。
- 前記接合層の熱膨張係数が2.0×10-6~8.0×10-6/Kである、請求項5~8のいずれか一項に記載の炭化珪素系ハニカム構造体。
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JP6285234B2 (ja) * | 2014-03-25 | 2018-02-28 | 日本碍子株式会社 | ハニカム構造体の製造方法 |
JP6653257B2 (ja) * | 2015-03-31 | 2020-02-26 | 日本碍子株式会社 | ハニカム構造体の製造方法、及び接合材 |
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JP2004130176A (ja) | 2002-10-09 | 2004-04-30 | Ngk Insulators Ltd | ハニカム構造体 |
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JP2011161425A (ja) | 2010-02-15 | 2011-08-25 | Ngk Insulators Ltd | ハニカムフィルタの製造方法 |
WO2013125713A1 (ja) | 2012-02-24 | 2013-08-29 | 日本碍子株式会社 | ハニカム構造体 |
JP2015187044A (ja) | 2014-03-26 | 2015-10-29 | 日本碍子株式会社 | ハニカム構造体 |
JP2017178722A (ja) | 2016-03-31 | 2017-10-05 | 日本碍子株式会社 | ハニカム構造体及びハニカム構造体の製造方法 |
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JP2020158366A (ja) | 2020-10-01 |
US20200308069A1 (en) | 2020-10-01 |
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