JP7016920B2 - Substrate processing equipment, substrate support, semiconductor device manufacturing method and substrate processing method - Google Patents

Description

The present disclosure relates to a method for manufacturing a substrate processing apparatus, a substrate support, and a semiconductor apparatus.

As one step in the manufacturing process of a semiconductor device (device), a film forming process is performed in which a plurality of substrates are housed in a processing chamber in a state of being supported in multiple stages by a substrate support, and a film is formed on the plurality of accommodated substrates. It may be done (see, eg, Patent Document 1).

Japanese Unexamined Patent Publication No. 2018-170502

In one step of the semiconductor device manufacturing process, it is required to improve the uniformity of the thickness of the film formed on the substrate and to suppress the metal contamination of the substrate and the film formed on the substrate.

The present disclosure provides a technique for improving the uniformity of the thickness of a film formed on a substrate and suppressing metal contamination on the substrate and the film formed on the substrate.

According to one aspect of the present disclosure
A substrate support having a support column made of metal and a plurality of support portions provided on the support column to support a plurality of substrates in multiple stages.
A processing chamber for accommodating the plurality of substrates supported by the substrate support, and
A heating unit that heats the plurality of substrates housed in the processing chamber,
Equipped with
The plurality of supports are provided with a technique in which at least the contact portion in contact with the plurality of substrates is composed of at least one of a metal oxide or a non-metal.

According to the present disclosure, it is possible to improve the uniformity of the thickness of the film formed on the substrate and suppress metal contamination on the substrate and the film formed on the substrate.

It is a vertical sectional view which shows the outline of the vertical type processing furnace of a substrate processing apparatus. FIG. 1 is a schematic cross-sectional view taken along the line AA in FIG. It is a schematic diagram of the gas supply system of the substrate processing apparatus of FIG. It is a side view which shows the boat housed in the board processing apparatus of FIG. FIG. 4 is a schematic cross-sectional view taken along the line BB in FIG. It is explanatory drawing which shows the wafer support state of the boat of FIG. It is a side view of the support of a boat in the 1st modification. It is a side view of the support | support pin of a boat in the 2nd modification. It is a side view of the support | support pin of a boat in the 3rd modification. It is a perspective view of the boat in the 4th modification. It is a cross-sectional view of the boat of FIG. It is a schematic block diagram of the controller of the board processing apparatus of FIG. 1, and is the schematic block diagram which shows the control system of a controller. It is a flow chart which shows the operation of the substrate processing apparatus of FIG.

Hereinafter, embodiments of the present disclosure will be described with reference to FIGS. 1 to 13. The substrate processing device 10 is configured as an example of a device used in the manufacturing process of a semiconductor device.

(1) Configuration of Substrate Processing Device The substrate processing device 10 includes a processing furnace 202 provided with a heater 207 as a heating unit (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.

[Outer tube (outer tube, outer tube) 203]
Inside the heater 207, an outer tube (also referred to as an outer cylinder or an outer tube) 203 that constitutes a reaction vessel (processing vessel) is arranged concentrically with the heater 207. The outer tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open. Below the outer tube 203, a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. An O-ring 220a as a sealing member is provided between the upper end portion of the manifold 209 and the outer tube 203. When the manifold 209 is supported by the heater base, the outer tube 203 is in a vertically installed state.

[Inner tube (inner tube, inner tube) 204]
Inside the outer tube 203, an inner tube (also referred to as an inner tube or an inner tube) 204 constituting the reaction vessel is disposed. The inner tube 204 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape in which the upper end is closed and the lower end is open. A processing container (reaction container) is mainly composed of an outer tube 203, an inner tube 204, and a manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container (inside the inner tube 204).

The processing chamber 201 is configured to accommodate the wafer 200 as a substrate in a state of being arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later. Nozzles 410 (first nozzle) and 420 (second nozzle) are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209 and the inner tube 204. Gas supply pipes 310 and 320 as gas supply lines are connected to the nozzles 410 and 420, respectively. As described above, the substrate processing apparatus 10 is provided with two nozzles 410 and 420 and two gas supply pipes 310 and 320, and can supply a plurality of types of gas into the processing chamber 201. It is configured as follows. However, the processing furnace 202 of the present embodiment is not limited to the above-mentioned embodiment.

[Gas supply unit]
As shown in FIG. 3, the gas supply pipes 310 and 320 are provided with mass flow controllers (MFCs) 321 and 322, which are flow rate controllers (flow rate control units), in order from the upstream side. Further, the gas supply pipes 310 and 320 are provided with valves 314 and 324, which are on-off valves, respectively. Gas supply pipes 510 and 520 for supplying the inert gas are connected to the downstream sides of the valves 314 and 324 of the gas supply pipes 310 and 320, respectively. The gas supply pipes 510 and 520 are provided with MFC 512, 522, which is a flow rate controller (flow control unit), and valves 514, 524, which are on-off valves, in this order from the upstream side.

Nozzles 410 and 420 are connected and connected to the tips of the gas supply pipes 310 and 320, respectively. The nozzles 410 and 420 are configured as L-shaped nozzles, and their horizontal portions are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204. The vertical portions of the nozzles 410 and 420 are provided inside the channel-shaped (groove-shaped) spare chamber 201a formed so as to project outward in the radial direction of the inner tube 204 and extend in the vertical direction. , It is provided in the spare chamber 201a toward the upper side (upper in the arrangement direction of the wafer 200) along the inner wall of the inner tube 204. Further, the nozzles 410 and 420 are arranged outside the opening 201b of the spare chamber 201a. As shown by the broken line in FIG. 3, a third nozzle (not shown) and a fourth nozzle (not shown) connected to the gas supply pipes 330 and 340 capable of supplying the cleaning gas or the inert gas are provided. May be done.

The nozzles 410 and 420 are provided so as to extend from the lower region of the processing chamber 201 to the upper region of the processing chamber 201, and a plurality of gas supply holes 410a and 420a are provided at positions facing the wafer 200, respectively. There is. As a result, the processing gas is supplied to the wafer 200 from the gas supply holes (openings) 410a and 420a of the nozzles 410 and 420, respectively.

A plurality of gas supply holes 410a are provided from the lower part to the upper part of the inner tube 204, each having the same opening area, and further provided with the same opening pitch. However, the gas supply hole 410a is not limited to the above-mentioned form. For example, the opening area may be gradually increased from the lower part to the upper part of the inner tube 204. This makes it possible to make the flow rate of the gas supplied from the gas supply hole 410a more uniform.

A plurality of gas supply holes 420a are provided from the lower part to the upper part of the inner tube 204, each having the same opening area, and further provided with the same opening pitch. However, the gas supply hole 420a is not limited to the above-mentioned form. For example, the opening area may be gradually increased from the lower part to the upper part of the inner tube 204. This makes it possible to make the flow rate of the gas supplied from the gas supply hole 420a more uniform.

A plurality of gas supply holes 410a and 420a of the nozzles 410 and 420 are provided at height positions from the lower part to the upper part of the boat 217, which will be described later. Therefore, the processing gas supplied into the processing chamber 201 from the gas supply holes 410a and 420a of the nozzles 410 and 420 is the wafer 200 accommodated from the lower part to the upper part of the boat 217, that is, the wafer 200 accommodated in the boat 217. It is supplied to the whole area. The nozzles 410 and 420 may be provided so as to extend to the lower region or the upper region of the processing chamber 201, but are preferably provided so as to extend to the vicinity of the ceiling of the boat 217.

From the gas supply pipe 310, as a processing gas, a raw material gas containing a first metal element (first metal-containing gas, first raw material gas) enters the processing chamber 201 via the MFC 312, a valve 314, and a nozzle 410. Is supplied to. As the raw material, for example, trimethylaluminum (Al (CH ₃ ) ₃ ) as an aluminum-containing raw material (Al-containing raw material gas, Al-containing gas) which is a metal-containing raw material gas (metal-containing gas) containing aluminum (Al) which is a metal element. , Abbreviation: TMA) is used. TMA is an organic raw material and is an alkylaluminum in which an alkyl group is bonded to aluminum. In addition, as a raw material, a metal-containing gas and an organic raw material, for example, tetrakisethylmethylaminozirconium containing zirconium (Zr) (TEMAZ, Zr [N (CH ₃ ) C ₂ H ₅ ] ₄ ) is used. be able to. TEMAZ is a liquid at normal temperature and pressure, and is vaporized by a vaporizer (not shown) and used as a TEMAZ gas which is a vaporized gas.

From the gas supply pipe 320, the reaction gas as the processing gas is supplied into the processing chamber 201 via the MFC 322, the valve 324, and the nozzle 420. As the reaction gas, an oxygen-containing gas (oxidizing gas, oxidizing agent) containing oxygen (O) and as a reaction gas (reactant) that reacts with Al can be used. As the oxygen-containing gas, for example, ozone ₍ O3) gas can be used. The gas supply pipe 320 may be provided with the flash tank 321 shown by the dotted line in FIG. By providing the flash tank 321 _, it is possible to supply a large amount of O3 gas to the wafer 200.

In the present embodiment, the raw material gas, which is a metal-containing gas, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and the reaction gas, which is an oxygen-containing gas, is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420. By being supplied, the raw material gas (metal-containing gas) and the reaction gas (oxygen-containing gas) are supplied to the surface of the wafer 200, and a metal oxide film is formed on the surface of the wafer 200.

From the gas supply pipes 510 and 520, for example, nitrogen (N ₂ ) gas is supplied as an inert gas into the processing chamber 201 via the MFC 512, 522, valves 514, 524, and nozzles 410, 420, respectively. Hereinafter, an example in which N ₂ gas is used as the inert gas will be described. As the inert gas, for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas other than N ₂ gas will be described. , A rare gas such as xenone (Xe) gas may be used.

The gas supply system (gas supply unit) is mainly composed of nozzles 410 and 420. The processing gas supply system (gas supply unit) may be configured by the gas supply pipes 310, 320, MFC 312, 322, valves 314, 324, and nozzles 410, 420. Further, at least one of the gas supply pipe 310 and the gas supply pipe 320 may be considered as the gas supply unit. The treated gas supply system can also be simply referred to as a gas supply system. When the raw material gas flows from the gas supply pipe 310, the raw material gas supply system is mainly composed of the gas supply pipe 310, the MFC 312, and the valve 314, but the nozzle 410 may be included in the raw material gas supply system. Further, the raw material gas supply system can also be referred to as a raw material supply system. When a metal-containing raw material gas is used as the raw material gas, the raw material gas supply system can also be referred to as a metal-containing raw material gas supply system. When the reaction gas is flowed from the gas supply pipe 320, the reaction gas supply system is mainly composed of the gas supply pipe 320, the MFC 322, and the valve 324, but the nozzle 420 may be included in the reaction gas supply system. When an oxygen-containing gas is supplied as a reaction gas from the gas supply pipe 320, the reaction gas supply system can also be referred to as an oxygen-containing gas supply system. Further, the inert gas supply system is mainly composed of gas supply pipes 510, 520 and MFC 512, 522, valves 514, 524. The inert gas supply system may also be referred to as a purge gas supply system, a diluted gas supply system, or a carrier gas supply system.

The method of gas supply in the present embodiment is in the annular vertically long space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200, that is, in the spare chamber 201a in the cylindrical space. The gas is conveyed via the nozzles 410 and 420 arranged in. Then, gas is ejected into the inner tube 204 from a plurality of gas supply holes 410a and 420a provided at positions facing the wafers of the nozzles 410 and 420. More specifically, the gas supply hole 410a of the nozzle 410 and the gas supply hole 420a of the nozzle 420 eject the raw material gas or the like in the direction parallel to the surface of the wafer 200, that is, in the horizontal direction.

[Exhaust section]
The exhaust hole (exhaust port) 204a is a through hole formed on the side wall of the inner tube 204 at a position facing the nozzles 410 and 420, that is, at a position 180 degrees opposite to the spare chamber 201a, and is, for example, a vertical hole. It is a slit-shaped through hole that is elongated in the direction. Therefore, the gas supplied into the processing chamber 201 from the gas supply holes 410a and 420a of the nozzles 410 and 420 and flowing on the surface of the wafer 200, that is, the residual gas (residual gas) is inner through the exhaust holes 204a. It flows into the exhaust passage 206 formed by the gap formed between the tube 204 and the outer tube 203. Then, the gas that has flowed into the exhaust passage 206 flows into the exhaust pipe 231 and is discharged to the outside of the processing furnace 202. The exhaust unit is composed of at least an exhaust pipe 231.

The exhaust holes 204a are provided at positions facing the plurality of wafers 200 (preferably at positions facing from the upper part to the lower part of the boat 217), and are located in the vicinity of the wafers 200 in the processing chamber 201 from the gas supply holes 410a and 420a. The supplied gas flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200, and then flows into the exhaust passage 206 through the exhaust hole 204a. That is, the gas remaining in the processing chamber 201 is exhausted in parallel to the main surface of the wafer 200 through the exhaust hole 204a. The exhaust hole 204a is not limited to the case where it is configured as a slit-shaped through hole, and may be configured by a plurality of holes.

The manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. In the exhaust pipe 231, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, an APC (Auto Pressure Controller) valve 243, and a vacuum pump as a vacuum exhaust device. 246 is connected. The APC valve 243 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 246 operating, and further, the valve with the vacuum pump 246 operating. By adjusting the opening degree, the pressure in the processing chamber 201 can be adjusted. The exhaust system, that is, the exhaust line is mainly composed of the exhaust hole 204a, the exhaust passage 206, the exhaust pipe 2311, the APC valve 243, and the pressure sensor 245. The vacuum pump 246 may be included in the exhaust system.

As shown in FIG. 1, a seal cap 219 as a furnace palate body capable of airtightly closing the lower end opening of the manifold 209 may be provided below the manifold 209. The seal cap 219 is configured to abut on the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as SUS and is formed in a disk shape. An O-ring 220b as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219. On the opposite side of the processing chamber 201 in the seal cap 219, a rotation mechanism 267 for rotating the boat 217 accommodating the wafer 200 is installed. The rotation shaft 255 of the rotation mechanism 267 penetrates the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 as a raising and lowering mechanism vertically installed outside the outer tube 203. The boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by raising and lowering the seal cap 219. The boat elevator 115 is configured as a transport device (conveyance mechanism) for transporting the wafers 200 housed in the boat 217 and the boat 217 into and out of the processing chamber 201.

The boat 217 as a substrate support supports a plurality of wafers, for example, 25 to 200 wafers 200 in a horizontal position and vertically aligned with each other, that is, to support them in multiple stages. It is configured to be arranged at intervals. The details of the boat 217 will be described later. At the bottom of the boat 217, a heat insulating portion 218 made of a heat-resistant material such as quartz or SiC is provided. With this configuration, the heat from the heater 207 is less likely to be transmitted to the seal cap 219 side.

As shown in FIG. 2, a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and the amount of electricity supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263. The temperature in the processing chamber 201 is configured to have a desired temperature distribution. The temperature sensor 263 is L-shaped like the nozzles 410 and 420, and is provided along the inner wall of the inner tube 204.

With this configuration, the temperature of at least the region supporting the wafer 200 of the boat 217 is kept uniform. There is a difference between the temperature in this soaking temperature region (soaking region T1) and the temperature in the region below T1. In addition, T1 is also referred to as a substrate processing area. The vertical length of the substrate processing region is configured to be equal to or less than the vertical length of the heat soaking region. The substrate processing area means a position in which the wafer 200 is supported (placed) in the vertical position of the boat 217. Here, the wafer 200 means at least one of a product wafer, a dummy wafer, and a fill dummy wafer. Further, the substrate processing region means a region for holding the wafer 200 in the boat 217. That is, the substrate processing region is also referred to as a substrate holding region.

[Boat (board support) 217]
As shown in FIG. 4, the boat 217 has a plurality of, for example, three, which are provided substantially vertically between the bottom plate 12 and the top plate 11 as two parallel plates and the bottom plate 12 and the top plate 11. It has a support 15 and. The column 15 has a columnar shape. In order to stably and simply support the wafer 200, the number of columns 15 is preferably three, but may be more than three. At least the support column 15 of the boat 217 is composed of, for example, stainless steel, which is a metal member, coated (coated) with a chromium oxide film (CrO film), which is a metal oxide film (metal oxide film). As the stainless steel, for example, SUS316L, SUS836L, and SUS310S are preferable. The stainless steel contains a metal element (for example, Fe, Ni, Cr, Cu, etc.) that may deteriorate the characteristics of the wafer 200 and the film formed on the wafer 200. When these metal elements enter into the wafer 200 or the film formed on the wafer 200 as impurities, it is called metal contamination. The metal in the present disclosure includes a material containing a metal as a main component and a metal alloy.

The three columns 15 are arranged and fixed to the bottom plate 12 in a substantially semicircular shape. The top plate 11 is fixed to the upper ends of the three columns 15. As shown in FIG. 5, the boat 217 has a plurality of columns 15, a reference column 15 is provided along the outer circumference of the supported wafer 200, and the reference column 15 is indicated by a chain line. It is located on the reference line D and is configured to be provided at a position symmetrical with respect to the reference line D.

As shown in FIGS. 4 and 6, a plurality of wafers 200 can be vertically arranged at predetermined intervals (P) on each support column 15 and supported (placed) in a substantially horizontal posture. Support pins 16 as portions (mounting portions) are provided in multiple stages. The support pin 16 is made of stainless steel like the support column 15, and is projected toward the inside of the boat 217. As shown in FIG. 5, each support pin 16 has a columnar shape and projects toward the center of the boat 217, that is, the center of the wafer 200. In this case, one support pin 16 is provided on each of the columns 15. That is, three support pins 16 are projected in one stage. The wafer 200 is supported by supporting the outer periphery of the wafer 200 on the three protruding support pins 16. It is preferable that the support pin 16 is kept horizontal. By keeping the level level, it is possible to avoid interference such as the wafer 200 coming into contact with the support pin 16 while the wafer 200 is being conveyed, and a uniform gas flow can be performed on the wafer with the wafer 200 supported by the boat 217. Can be secured.

Since the stanchion 15 of the boat 217 of the present embodiment is made of a metal member, it can be made thinner than the stanchion of a conventional boat made of quartz or SiC. For example, the diameter φ of the support column of the conventional boat is 19 mm, and the diameter φ of the support column 15 of the boat 217 of the present embodiment shown in FIG. 6 is 5 to 10 mm. The diameter of the support column 15 is preset so as to have a strength capable of supporting the wafer 200 on the support pin 16. Therefore, the diameter φ (5 to 10 mm) of the support column 15 in the present embodiment is an example, and even when the diameter having the strength to support the wafer 200 is less than 5 mm depending on the number of the support columns 15, the present embodiment can be used. included.

For example, if the diameter of the support column 15 is small, it is difficult to obstruct the flow of the film-forming gas, so that retention is unlikely to occur. Further, since the surface area of the support column 15 is reduced, the consumption of the film-forming gas is reduced. Therefore, it is possible to reduce the decrease in film thickness uniformity due to the decrease in film thickness in the vicinity of each column 15. Further, as the diameter of the support column 15 is reduced, the diameter of the support pin 16 also needs to be reduced. However, according to the present embodiment, by forming the support pin 16 from stainless steel, which is a metal member like the support column 15, it is possible to secure the strength capable of supporting the wafer 200.

The support pin 16 is inserted into a hole 15c as a recess provided in the column 15, and is fixed at a predetermined interval (P) (for example, 8 mm pitch) by welding or the like. Further, as shown in FIG. 6, the tip 16a of the columnar support pin 16 may be rounded or chamfered.

Further, at least the contact portion (contact portion) 16f of the support pin 16 with the wafer 200 is coated with a CrO film which is a metal oxide film. At least the contact portion 16f of the support pin 16 with the wafer 200 may be coated with a silicon oxide film (SiO film) which is a non-metal film (non-metal film) containing no metal element, instead of the CrO film.

Further, a part or the whole of the support pin 16 may be coated with a CrO film, and at least the contact portion 16f of the support pin 16 with the wafer 200 may be further coated with a SiO film. The portion coated with the SiO film may be applied to at least the contact portion 16f with the wafer 200, and more preferably to the entire portion protruding from the support column 15. As a result, even when the coating with the CrO film cannot sufficiently suppress the metal contamination, it is possible to more reliably suppress the metal contamination by coating the portion in contact with the wafer 200 with the SiO film.

The support pin 16 (support portion) may be a semi-cylindrical column having a plane on the contact surface side with the wafer 200, a square columnar column, a triangular columnar column, or the like, in addition to the columnar column, and may have a plate shape. May be. Further, it may be a semi-cylindrical shape having a curved surface on the contact surface side with the wafer 200.

In this embodiment, the CrO film is applied as one of the suitable examples of the metal oxide film for coating the support column 15 and the support pin 16, but the present invention is not limited to this, and examples of other suitable metal oxide films are used. A film of aluminum oxide (AlO) may be applied as one of the above. Further, as a film of another metal oxide, a film of titanium oxide (TIO), zirconium oxide (ZrO), hafnium oxide (HfO) or the like can also be applied. Further, in the present embodiment, an example in which the support column 15 and the support pin 16 are coated with a CrO film which is a metal oxide film has been described, but instead of the metal oxide film, silicon (Si), silicon oxide (SiO), and silicon nitride have been described. It may be coated with a film of a non-metal material that does not contain a metal element such as (SiN) or SiC. Further, as a method of coating with Si, Si thermal spraying, which facilitates partial coating on the contact portion (contact portion), may be used.

Further, when the boat 217 is used in the process of forming a metal-containing film on the wafer 200, the metal may be coated with the metal contained in the metal-containing film. For example, when the boat 217 is used in the process of forming the AlO film as the metal-containing film, the above-mentioned coating may be performed with Al by spraying aluminum (Al), which is a metal contained in the AlO film.

In the present embodiment, the support column 15 is formed of stainless steel, which is a metal. As a result, it is possible to reduce the diameter of the boat support while ensuring the same strength as that of the boat support such as quartz, and it is possible to suppress the film thickness decrease that occurs in the vicinity of the boat support.

Further, in the present embodiment, at least a part of the support column 15 and the support pin 16 constituting the boat 217 is coated with at least one of a metal oxide film or a non-metal film. This makes it possible to suppress metal contamination in the wafer 200 caused by the metal members constituting the boat 217.

Further, in the present embodiment, at least the contact portion (contact portion) 16f of the support pin 16 with the wafer 200 is coated with at least one of a metal oxide film or a non-metal film. This makes it possible to suppress metal contamination on the wafer 200 due to the support pins 16 in particular in contact with the wafer 200.

Further, in the present embodiment, the support column 15 is coated with at least one of a metal oxide film or a non-metal film. As a result, metal contamination caused by the metal constituting the column 15 can be suppressed, and the level of metal contamination can be further maintained.

Further, as in the present embodiment, the portion of the support pin 16 or the support pin 16 other than the contact portion 16f with the wafer 200 is coated with at least one of a metal oxide film or a non-metal film, so that the support pin 16 is deposited on the surface of the support pin 15 or the like. When a film of an object is formed, the stress generated between the surface of the column 15 and the like and the film of the deposit due to temperature changes is relieved, and cracks and peeling of the film of the deposit occur, resulting in the generation of particles. It can also be suppressed. That is, when the film formation process is performed on the wafer 200, a metal oxide film or a non-metal oxide film having a stress in the same direction as the film of the deposit formed on the surface of the support column 15 or the like in the film formation process is used as a stress buffer film. It is coated on the surface of the support column 15 and the like. In this case, the metal oxide film or the non-metal oxide film used for the coating is selected according to the film type formed in the film forming process.

Further, in the present embodiment, both the support pin 15 and the support pin 16 made of stainless steel are coated with at least one of a metal oxide film or a non-metal film. As a result, the boat 217 can be coated with a single treatment. The formation of the CrO film on the surface of stainless steel can be performed, for example, by disabling the stainless steel. Further, when coating is performed with the same film type (for example, AlO film, etc.) as the film formed in the film forming process on the wafer 200 instead of the CrO film, the boat 217 in a state where the wafer 200 is not mounted is used in the processing chamber. The coating may be performed by carrying it into the 201 and performing the same processing as the film forming treatment on the wafer 200.

In this embodiment, the surface of the support column 15 is coated with a CrO film or the like. However, the surface of the support column 15 may not be coated with a metal oxide film or a non-metal film, and the metal base material may remain exposed on the surface.

According to the verification by the discloser, it is caused by stainless steel by ensuring the distance between the member made of stainless steel and the Si wafer at least 8 mm or more, preferably 12 mm or more under the conditions of 250 ° C. or higher and 400 ° C. or lower. It was confirmed that the metal contamination of the Si wafer can be suppressed. Therefore, by placing the wafer 200 on the support pin 16 so as to be separated from the surface of the support pin 15 by a predetermined distance, the surface of the support pin 16 is not coated with a metal oxide film or a non-metal film, and the surface of the support pin 16 is not coated. By forming at least one of a metal oxide film and a non-metal oxide film, it is possible to suppress metal contamination of the wafer 200 and the like caused by the metal constituting the support column 15 and the support pin 16. When the boat 217 is used under the condition of, for example, 400 ° C. or lower, the predetermined distance is preferably 8 mm or more, more preferably 12 mm or more. As described above, by not performing the coating treatment on the surface of the support column 15, it is possible to facilitate the production of the boat 217 as compared with the case where the coating treatment is performed.

(First modification)
As shown in FIG. 7, a plurality of grooves 15a carved in the support column 15 are used as support portions (mounting portions) instead of the support pins 16, and the wafer 200 is supported (mounted) on the bottom surface 15b of the grooves 15a. You may. Similar to the embodiment, the support column 15 in the first modification of the present embodiment is coated with a CrO film which is a metal oxide film. In particular, at least a portion of the semicircular bottom surface 15b of the groove 15a on which the wafer 200 is supported (that is, a contact portion (contact portion)) is configured to be coated with a CrO film. Further, at least the contact point with the wafer 200 in the semicircular bottom surface 15b of the groove 15a) may be replaced with a CrO film and coated with a SiO film which is a non-metal film. Further, the groove 15a may be coated with a CrO film, and at least the contact portion of the semicircular bottom surface 15b of the groove 15a with the wafer 200 may be further coated with the SiO film.

(Second modification)
As shown in FIG. 8, the support pin 16 in the second modification of the present embodiment has a hybrid configuration of a metal portion 16b composed of a metal member and a quartz portion 16c composed of a non-metal member containing no metal element. be. The metal portion 16b has the same structure as the support pin 16 in the embodiment, and is inserted into a hole 15c as a recess provided in the support column 15 and fixed by welding. The wafer 200 is mounted on the quartz portion (quartz portion) 16c. The quartz portion 16c is composed of a quartz piece, and is the upper half of the columnar support pins 16 in the above-described embodiment facing the wafer 200 mounted on the support pins 16 and is welded from the support column 15. The range from the position (P2) at a predetermined distance (L2) that is not affected to the tip of the support pin 16 is made of quartz (SiO). That is, in the second modification, at least the contact point between the wafer 200 and the support pin 16 is composed of a non-metal quartz portion 16c. The quartz portion 16c may be made of other non-metals such as SiC and SiC instead of quartz. In this example, the portion from the support column 15 to the predetermined distance (L2) is made of metal.

The metal portion 16b has a circular cross section in a portion embedded in a hole in the strut 15 and a portion from the surface of the strut 15 to the position P2, and a semicircular cross section from the position P2 to the tip of the strut 15. The quartz portion 16c has a semi-cylindrical shape having a semicircular cross section. However, the quartz portion 16c is not limited to a semi-cylindrical shape, may be another pillar shape, may have a plate shape or a chip shape having a flat contact surface with the wafer 200, and may have another shape. It may be. In the present disclosure, members having these shapes are collectively referred to as piece-shaped members. The vertical thickness T2 of the quartz portion 16c is, for example, 0.5 mm or more and less than 10 mm, more preferably 1 mm or more and less than 5 mm. If the thickness T2 is less than 0.5 mm, the quartz portion 16c may be damaged by placing the wafer 200. By setting the thickness T2 to 1 mm or more, it is possible to more reliably prevent the quartz portion 16c from being damaged when the wafer 200 is placed.

In the metal portion 16b, the lower portion of the quartz portion 16c and the portion from the surface of the support column 15 to the position P2 are coated with at least one of the CrO film and the SiO film.

The metal member constituting the support column 15 and the metal member constituting the metal portion 16b of the support pin 16 are joined by welding. After welding, by coating or passivating the CrO film, the weld marks at the welded part are erased, the surface condition becomes the same as the surface of the CrO film at the unwelded part, and chromium (Cr) and oxygen (Cr) and oxygen ( The concentration of impurities other than O) can be the same as that of the unwelded portion. Further, since the contact surface with the wafer 200 is composed of the quartz portion 16c which is a non-metal member, the surface coating film such as the CrO film and the SiO film does not peel off due to the contact with the wafer 200.

In the second modification, the form in which the surfaces of the support column 15 and the metal portion 16b are coated with a CrO film or the like has been described. However, as a further modification of the second modification, the surface of at least one of the support column 15 and the metal portion 16b is not coated with either a metal oxide film or a non-metal film, and these metal base materials are exposed on the surface. You can leave it as it is. By forming at least the contact point between the wafer 200 and the support pin 16 with a non-metal quartz portion 16c, it is possible to suppress metal contamination of the wafer 200 and the like caused by the metal constituting the support column 15 and the metal portion 16b. can. As described above, by not performing the coating treatment on at least one of the surfaces of the support column 15 and the metal portion 16b, it is possible to facilitate the production of the boat 217 as compared with the case where the coating treatment is performed.

Further, as another modification of the second modification, the support pin 16 is coated with a metal oxide film such as a CrO film or a non-metal film, and a part of the contact portion of the support pin 16 with the wafer 200 is formed. It may be composed of quartz such as a quartz coat or a quartz chip. That is, the contact point of the support pin 16 with the wafer 200 may be composed of a CrO film and quartz.

(Third modification example)
The support pin 16 in the third modification of the present embodiment is entirely composed of a non-metal substance such as quartz, SiC, SiC, AlO, or a metal oxide. As shown in FIG. 9, the support pin 16 is screwed by inserting a screw 16d as a columnar member through a hole provided in the support column 15 into a screw hole 16e as a recess formed in the support pin 16. It is fixed to the support column 15. The other members constituting the boat 217 are made of stainless steel coated with a CrO film which is a metal oxide film, a SiO film which is a non-metal film, and the like. Even if the support pin 16 is fixed to the support column 15 by forming a recess carved in the support pin 16 with a hole without a screw groove and inserting a pin-shaped fixing member without a screw groove into the recess instead of the screw 16d. good. It should be noted that the wire processing technique is used to conceal the screw 16d to form a flat surface and improve the coverage of the SiO film.

It should be noted that a structure may be configured in which a convex portion is provided on the support pin 16 on the support column 15 side and is inserted into a concave portion or a through hole provided in the support pin 15 (a structure for fitting). The support pin 16 and the support pin 15 may be joined by welding, or the convex portion of the support pin 16 is formed in a screw shape, and the concave portion or through hole of the support pin 15 is formed in a screw hole shape and fitted. May be.

Further, in the third modification, as in the case of the further modification of the second modification, the surface of the support column 15 is not coated with the metal oxide film or the non-metal film, and the metal base material is not coated on the surface. good. By forming the support pin 16 in contact with the wafer 200 with a non-metal or a metal oxide as in the present embodiment, it is possible to suppress metal contamination of the wafer 200 and the like caused by the metal constituting the support column 15. can. As described above, by not performing the coating treatment on the surface of the support column 15, it is possible to facilitate the production of the boat 217 as compared with the case where the coating treatment is performed.

(Fourth modification)
As shown in FIG. 10, the boat 217 in the fourth modification of the present embodiment is provided on the outer periphery of each of the top plate 11 and the bottom plate 12, and has a support column 15 for holding the wafer 200, and the top plate 11 and the bottom plate 12. It is configured to include auxiliary columns 18 provided on the outer periphery of each and having a diameter smaller than that of the columns 15. Further, the support pin 16 is provided on the support column 15 as a support portion (mounting portion) for supporting (mounting) the wafer 200, as in the embodiment, the second modification, or the third modification.

Further, as shown in FIG. 11, the auxiliary columns 18 are provided at positions that evenly divide the columns 15. Specifically, the boat 217 is configured so as to be evenly spaced in the circumferential direction between the support columns 15 and the auxiliary columns 18 or between the auxiliary columns 18. Further, as shown in FIG. 11, the boat 217 has a plurality of columns 15, and a reference column 15 is provided in the direction in which the wafer 200 is supported, and the reference column 15 is a reference line D having a broken line. The stanchion 15 and the auxiliary stanchion 18 are provided at positions symmetrical with respect to the reference line D.

Further, the diameter of the auxiliary column 18 is smaller than the diameter of the column 15, and is configured not to have the support pin 16. This is because the auxiliary strut 18 is an auxiliary strut. The number does not have to be four. In the present embodiment, the three columns 15 and the four auxiliary columns 18 are evenly provided between the columns 15 and the auxiliary columns 18 or between the auxiliary columns 18 in the circumferential direction of the wafer 200. It is not limited to the form.

The support column 15 of the boat 217 of this modification is configured to be thinner than the support column 15 of the boat 217 of the embodiment, and four auxiliary columns 18 are attached for the purpose of ensuring strength. For example, the diameter φ of the support column 15 of the boat 217 of the embodiment shown in FIG. 5 is 8 mm, the diameter of the support column 15 of the boat 217 of the present modification shown in FIG. 11 is φ5 mm, and the diameter of the auxiliary support column 18 is φ4 mm.

Subsequently, the configuration of the controller 121, which is a control unit (control means) for controlling the operation of the above-mentioned substrate processing device 10, will be described with reference to FIG.

As shown in FIG. 12, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Has been done. The RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus. An input / output device 122 configured as, for example, a touch panel or the like is connected to the controller 121.

The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing device, a process recipe in which procedures and conditions of a method for manufacturing a semiconductor device to be described later are described, and the like are readablely stored. The process recipes are combined so that the controller 121 can execute each process (each step, each procedure, each process) in the method of manufacturing a semiconductor device described later and obtain a predetermined result, and are combined as a program. Function. Hereinafter, this process recipe, control program, etc. are collectively referred to simply as a program. When the term program is used in the present disclosure, it may include only a process recipe alone, a control program alone, or a combination of a process recipe and a control program. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.

The I / O port 121d has the above-mentioned MFC 312,322,332,342,352,512,522, valve 314,324,334,344,354,514,524, pressure sensor 245, APC valve 243, vacuum pump 246, It is connected to a heater 207, a temperature sensor 263, a rotation mechanism 267, a boat elevator 115, and the like.

The CPU 121a is configured to read a control program from the storage device 121c and execute it, and to read a process recipe or the like from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like. The CPU 121a is operated to adjust the flow rate of various gases by the MFC 312, 322, 332, 342, 352, 512, 522, and the valves 314, 324, 334, 344, 354, 514, 524 according to the contents of the read process recipe. Opening / closing operation, opening / closing operation of APC valve 243 and pressure adjustment operation based on pressure sensor 245 by APC valve 243, temperature adjustment operation of heater 207 based on temperature sensor 263, start and stop of vacuum pump 246, boat 217 by rotation mechanism 267. It is configured to control the rotation and rotation speed adjusting operation, the raising and lowering operation of the boat 217 by the boat elevator 115, the accommodation operation of the wafer 200 in the boat 217, and the like.

The controller 121 is stored in an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as MO, a semiconductor memory such as a USB memory or a memory card) 123. The above-mentioned program can be configured by installing it on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present disclosure, the recording medium may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both. The program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.

(2) Substrate processing process (semiconductor device manufacturing process)
As one step of the manufacturing process of the semiconductor device (device), an example of a step of forming a film on the wafer 200 will be described with reference to FIG. In the following description, the operation of each part constituting the substrate processing device 10 is controlled by the controller 121.

In the following first example, while heating the processing chamber 201 housed in a state where the wafer 200 as a substrate is loaded at a predetermined temperature, the raw material is sent to the processing chamber 201 from a plurality of gas supply holes 410a opened in the nozzle 410. A step of supplying TMA gas as a gas and a step of supplying _O3 gas as a reaction gas from a plurality of gas supply holes 420a opened in the nozzle 420 are performed a predetermined number of times, respectively, and AlO as a metal oxide film is performed on the wafer 200. Form a membrane.

When the term "wafer" is used in the present disclosure, it may mean the wafer itself or a laminate of a wafer and a predetermined layer or film formed on the surface thereof. When the term "wafer surface" is used in the present disclosure, it may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer. In the present disclosure, the description of "forming a predetermined layer on a wafer" means that the predetermined layer is directly formed on the surface of the wafer itself, or the layer formed on the wafer, etc. It may mean forming a predetermined layer on top. The use of the term "wafer" in the present disclosure is also synonymous with the use of the term "wafer".

Hereinafter, the substrate processing step including the film forming step S300 will be described with reference to FIGS. 1 and 13.

(Substrate carry-in process S301)
When a plurality of wafers 200 are loaded (wafer charged) on the support pins 16 of the boat 217, the boat 217 containing the plurality of wafers 200 is lifted by the boat elevator 115 as shown in FIG. It is carried into the processing room 201 (boat load). In this state, the seal cap 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b.

(Atmosphere adjustment step S302)
Subsequently, the inside of the processing chamber 201, that is, the space where the wafer 200 is present, is evacuated by the vacuum pump 246 so as to have a desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 is always kept in operation until at least the processing for the wafer 200 is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating in the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed. When the boat 217 is rotated, the rotation mechanism 267 starts the rotation of the boat 217 and the wafer 200. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed. Further, N2 gas may be started to be supplied to the lower part of the heat insulating portion 218 as an inert gas from the gas supply pipe 350. Specifically, the valve 354 is opened, and the MFC 352 adjusts the N ₂ gas flow rate to a flow rate in the range of 0.1 to 2 slm. The flow rate of MFC352 is preferably 0.3 slm to 0.5 slm.

[Film formation process S300]
Subsequently, the first step (raw material gas supply step), the purge step (residual gas removal step), the second step (reaction gas supply step), and the purge step (residual gas removal step) are performed a predetermined number of times in this order. N (N ≧ 1) is performed to form an AlO film.

(First step S303 (first gas supply))
The valve 314 is opened, and the TMA gas, which is the first gas (raw material gas), flows into the gas supply pipe 310. The flow rate of the TMA gas is adjusted by the MFC 312, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231. At this time, TMA gas is supplied to the wafer 200. At this time, the valve 514 may be opened and an inert gas such as _N2 gas may flow into the gas supply pipe 510. The flow rate of the N ₂ gas flowing in the gas supply pipe 510 is adjusted by the MFC 512, is supplied into the processing chamber 201 together with the TMA gas, and is exhausted from the exhaust pipe 231. The N ₂ gas is supplied into the processing chamber 201 via the gas supply pipe 320 and the nozzle 420, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is, for example, 1 to 1000 Pa, preferably 1 to 100 Pa, and more preferably 10 to 50 Pa. By setting the pressure in the processing chamber 201 to 1000 Pa or less, the residual gas described later can be suitably removed, and the TMA gas is self-decomposed in the nozzle 410 and deposited on the inner wall of the nozzle 410. It can be suppressed. By setting the pressure in the processing chamber 201 to 1 Pa or more, the reaction rate of the TMA gas on the surface of the wafer 200 can be increased, and a practical film forming rate can be obtained. In the present disclosure, for example, when the numerical value is described as 1 to 1000 Pa, it means 1 Pa or more and 1000 Pa or less. That is, 1 Pa and 1000 Pa are included in the numerical range. The same applies not only to the pressure but also to all the numerical values described in the present disclosure such as flow rate, time, temperature and the like.

The supply flow rate of the TMA gas controlled by the MFC 312 is, for example, a flow rate within the range of 10 to 2000 sccm, preferably 50 to 1000 sccm, and more preferably 100 to 500 sccm. By setting the flow rate to 2000 sccm or less, it is possible to suitably remove the residual gas described later, and it is possible to prevent the TMA gas from being autolyzed in the nozzle 410 and accumulating on the inner wall of the nozzle 410. .. By setting the flow rate to 10 sccm or more, it is possible to obtain a practical film formation rate capable of increasing the reaction rate of the TMA gas on the surface of the wafer 200.

The supply flow rate of the N ₂ gas controlled by the MFC 512 is, for example, a flow rate within the range of 1 to 30 slm, preferably 1 to 20 slm, and more preferably 1 to 10 slm.

The time for supplying the TMA gas to the wafer 200 is, for example, in the range of 1 to 60 seconds, preferably 1 to 20 seconds, and more preferably 2 to 15 seconds.

The heater 207 heats the wafer 200 so that the temperature of the wafer 200 is, for example, in the range of room temperature to 400 ° C., preferably 90 to 400 ° C., more preferably 150 to 400 ° C. The temperature is 400 ° C. or lower. The lower limit of the temperature can be changed depending on the characteristics of the oxidizing agent used as the reaction gas. Further, by setting the upper limit of the temperature to 400 ° C., when the substrate processing step is performed using the boat 217 disclosed in the above-described embodiment and its modification, the occurrence of metal contamination on the wafer 200 is more reliable. It is possible to prevent it.

By supplying TMA gas into the processing chamber 201 under the above conditions, an Al-containing layer is formed on the outermost surface of the wafer 200. The Al-containing layer may contain C and H in addition to the Al layer. In the Al-containing layer, TMA is physically adsorbed on the outermost surface of the wafer 200, or a substance partially decomposed by TMA is chemically adsorbed, or TMA. Is formed by the accumulation of Al due to thermal decomposition. That is, the Al-containing layer may be an adsorption layer (physical adsorption layer or chemical adsorption layer) of TMA or a substance in which a part of TMA is decomposed, or may be an Al deposition layer (Al layer).

(Purge step S304 (residual gas removal step))
After the Al-containing layer is formed, the valve 314 is closed and the supply of TMA gas is stopped. At this time, with the APC valve 243 kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the unreacted or TMA gas remaining in the processing chamber 201 after contributing to the formation of the Al-containing layer is discharged into the processing chamber 201. Exclude from within. The valves 514 and 524 maintain the supply of _N2 gas into the processing chamber 201 in the open state. The N ₂ gas acts as a purge gas, and can enhance the effect of removing the TMA gas remaining in the treatment chamber 201 after contributing to the formation of the unreacted or Al-containing layer from the treatment chamber 201.

Next, the second step (step of supplying the reaction gas) is performed.

(Second step S305 (reaction gas supply step))
After removing the residual gas in the processing chamber 201, the valve 324 is opened and the O3 gas, which is a reaction gas, flows into the gas supply pipe ₃₂₀ . The flow rate of the O3 gas is adjusted by the MFC 322 _, is supplied to the wafer 200 in the processing chamber 201 from the gas supply hole 420a of the nozzle 420, and is exhausted from the exhaust pipe 231. That is _, the wafer 200 is exposed to O3 gas. At this time, the valve 524 may be opened and _N2 gas may flow into the gas supply pipe 520. The flow rate of the N ₂ gas is adjusted by the MFC 522, is supplied into the processing chamber 201 together with the O ₃ gas, and is exhausted from the exhaust pipe 231. The N ₂ gas is supplied to the processing chamber 201 via the gas supply pipe 510 and the nozzle 410, and is exhausted from the exhaust pipe 231. When the flush tank 321 is provided on the upstream side of the valve 324 of the gas supply pipe 320, when the valve ₃₂₄ is opened, the O3 gas stored in the flush tank 321 is discharged into the processing chamber 201. It will be supplied.

The O3 gas reacts with at _least a part of the Al-containing layer formed on the wafer 200 in the first step S303. The Al-containing layer is oxidized to form an aluminum oxide layer (AlO layer) containing Al and O as a metal oxide layer. That is, the Al-containing layer is modified into an AlO layer.

(Purge step S306 (residual gas removal step))
After the AlO layer is formed, the valve ₃₂₄ is closed to stop the supply of O3 gas. Then, by the same treatment procedure as the residual gas removal step after the raw material gas supply step _, the O3 gas and the reaction by-product remaining in the treatment chamber 201 after contributing to the formation of the unreacted or AlO layer are processed in the treatment chamber 201. Exclude from.

[Implemented a predetermined number of times]
The AlO film is formed on the wafer 200 by performing the cycle of sequentially performing the first step S303, the purging step S304, the second step S305, and the purging step S306 for a predetermined number of times N. The number of cycles is appropriately selected depending on the film thickness required for the finally formed AlO film. In the determination step S307, it is determined whether or not this predetermined number of times has been executed. If it has been performed a predetermined number of times, a YES (Y) determination is made and the film forming step S300 is completed. If it is not performed a predetermined number of times, a No (N) determination is made and the film forming step S300 is repeated. It is preferable that this cycle be repeated a plurality of times. The thickness (thickness) of the AlO film is, for example, 10 to 150 nm, preferably 40 to 100 nm, and more preferably 60 to 80 nm. When it is 150 nm or less, the surface roughness can be reduced, and when it is 10 nm or more, the occurrence of film peeling due to the stress difference with the underlying film can be suppressed.

(Atmosphere adjustment process S308 (after-purge / atmospheric pressure return))
When the film forming step S300 is completed, the valves 514 and 524 are opened, _N2 gas is supplied into the processing chamber 201 from each of the gas supply pipes 310 and 320, and the gas is exhausted from the exhaust pipe 231. The N ₂ gas acts as a purge gas, and the gas and by-products remaining in the treatment chamber 201 are removed from the treatment chamber 201 (after-purge). After that, the atmosphere in the processing chamber 201 is replaced with N _{2 gas (N 2 gas} replacement), and the pressure in the processing chamber 201 is restored to normal pressure (return to atmospheric pressure).

(Board unloading process S309 (boat unload / wafer discharge))
After that, the seal cap 219 is lowered by the boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 203 while being supported by the boat 217. (Boat unloading). The processed wafer 200 is carried out of the outer tube 203 and then taken out from the boat 217 (wafer discharge).

By performing such a substrate processing step, a desired film is deposited on the wafer 200. That is, it is possible to improve the processing uniformity of each wafer 200 supported by the boat 217 and the in-plane processing uniformity of the wafer 200.

In the second example of the present embodiment, while heating the processing chamber 201 in which a plurality of wafers 200 are loaded as a substrate at a predetermined temperature, a plurality of gas supply holes opened in the nozzle 410 in the processing chamber 201. A step of supplying TEMAZ gas as a raw material gas from 410a and a step of supplying reaction gas from a gas supply hole 420a opened in the nozzle 420 are performed a predetermined number of times N'(N ≧ 1 time) on the wafer 200. , Zr and O to form a zirconium oxide film (ZrO film).

(Substrate carry-in process S301)
The substrate loading step S301 of the second example is the same as that of the first example.

(Atmosphere adjustment step S302)
The atmosphere adjusting step S302 of the second example is the same as that of the first example.

[Film formation process S300]
A step of forming a ZrO film, which is a high dielectric constant oxide film, as a metal oxide film on the wafer 200 is executed.

(First step S303 (first gas supply))
The valve 314 is opened, and TEMAZ gas, which is a raw material gas, is flowed into the gas supply pipe 310 as a processing gas. The flow rate of the TEMAZ gas is adjusted by the MFC 312, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231. At this time, TEMAZ gas is supplied to the wafer 200. At this time, the valve 514 is opened at the same time, and _N2 gas is flowed into the gas supply pipe 510. The flow rate of the N ₂ gas flowing in the gas supply pipe 510 is adjusted by the MFC 512. The N ₂ gas is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410 together with the TEMAZ gas, and is exhausted from the exhaust pipe 231.

Further, in order to prevent the TEMAZ gas from entering the nozzle 420, the valve 524 is opened and N ₂ gas is flowed into the gas supply pipe 520. For N ₂ gas, the gas supply pipe 320 and the nozzle 42
It is supplied into the processing chamber 201 via 0 and exhausted from the exhaust pipe 231.

At this time, the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is set to, for example, a pressure in the range of 20 to 500 Pa. The supply flow rate of the TEMAZ gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5.0 g / min. The time for exposing the wafer 200 to TEMAZ, that is, the gas supply time (irradiation time) is, for example, a time within the range of 10 to 300 seconds. At this time, the temperature of the heater 207 is set to a temperature such that the temperature of the wafer 200 is in the range of, for example, 150 to 400 ° C. By supplying TEMAZ gas, a Zr-containing layer is formed on the wafer 200. Organic substances (carbon (C), hydrogen (H), nitrogen (N), etc.) derived from TEMAZ gas remain slightly as residual elements in the Zr-containing layer.

(Purge step S304 (residual degassing step))
After supplying the TEMAZ gas for a predetermined time, the valve 314 is closed to stop the supply of the TEMAZ gas. At this time, the APC valve 243 of the exhaust pipe 231 is left open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the unreacted or TEMAZ gas remaining in the processing chamber 201 that has contributed to the reaction is discharged into the processing chamber. Exclude from within 201. At this time, the valve 524 is kept open to maintain the supply of the N ₂ gas into the processing chamber 201. The N ₂ gas acts as a purge gas.

(Second step S305 (reaction gas supply step))
After removing the residual gas in the processing chamber 201, the valve ₃₂₄ is opened and O3 gas, which is an oxygen-containing gas, flows into the gas supply pipe 320. The flow rate of the O3 gas is adjusted by the MFC 322 _, is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420, and is exhausted from the exhaust pipe 231. _At this time, O3 gas is supplied to the wafer 200. At the same time, the valve 524 is opened to allow an inert gas such as _N2 gas to flow into the gas supply pipe 520. The flow rate of the N ₂ gas flowing in the gas supply pipe 520 is adjusted by the MFC 522, is supplied into the processing chamber 201 together with the O ₃ gas, and is exhausted from the exhaust pipe 231.

When flowing O3 gas _, the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, 110 Pa. The _total supply flow rate of the O3 gas supplied from the nozzle 420 controlled by the MFC 322 is, for example, 70 slm. The flow velocity of the _O3 gas controlled by the MFC 322 and the APC valve 243 is, for example, a flow velocity in the range of 7.0 m / s to 8.5 m / s. The partial pressure of the O3 gas is _, for example, 9.0 Pa (about 8.0% of the pressure in the treatment chamber 201) to 12.0 Pa (about 11.0% of the pressure in the treatment chamber 201), more preferably 11. The pressure is 0 Pa (10.0% of the pressure in the processing chamber 201). The concentration of the ^{O3 gas supplied into the processing chamber 201 is 250 g / Nm 3} _. The time for exposing the wafer 200 to the O3 gas _, that is, the gas supply time (irradiation time) is, for example, a time within the range of 30 to 120 seconds. The temperature of the heater 207 at this time is the same as that of step S101. By supplying the O3 gas _, the Zr-containing layer formed on the wafer 200 is oxidized to form the ZrO layer. At this time, a small amount of organic substances (carbon (C), hydrogen (H), nitrogen (N), etc.) derived from TEMAZ gas remain in the ZrO layer.

In the present embodiment, one of the nozzles 420 is used to supply O3 gas, but the number of nozzles is not limited. For example, even if _three nozzles _are used to supply O3 gas. I do not care.

(Purge step S306 (residual gas removal step))
After the ZrO layer is formed, the valve ₃₂₄ is closed and the supply of O3 gas is stopped. Then _, the unreacted or _O3 gas that has contributed to the formation of the ZrO layer remaining in the treatment chamber 201 is removed from the treatment chamber 201 by the same treatment procedure as in the residual gas removal step before the O3 gas supply step.

[Implemented a predetermined number of times]
By performing the cycle of performing the first step S303, the purging step S304, the second step S305, and the purging step S306 in order one or more times (predetermined number of times N'), ZrO having a predetermined thickness is placed on the wafer 200. A film is formed. The above cycle is preferably repeated multiple times. In this way, when the ZrO film is formed, the _TEMAZ gas and the O3 gas are alternately supplied to the wafer 200 so as not to be mixed with each other (time division).

(Atmosphere adjustment process S308 (after-purge / atmospheric pressure return))
The atmosphere adjusting step S308 of the second example is the same as that of the first example.

(Board unloading process S309 (boat unload / wafer discharge))
The substrate unloading step S309 of the second example is the same as that of the first example.

Although various typical embodiments of the present disclosure have been described above, the present disclosure is not limited to these embodiments and may be used in combination as appropriate. Moreover, it is not limited to this.

For example, in the above-described embodiment, an example in which the reaction vessel (treatment vessel) is composed of an outer tube (outer tube, outer tube) 203 and an inner tube (inner tube, inner tube) 204 is shown, but the outer tube 203 is shown. The reaction vessel may be constructed only by itself.

Further, in the first example of the above-described embodiment, an example in which the TMA gas is used as the Al-containing gas has been described, but the present invention is not limited to this, and for example, aluminum chloride (AlCl ₃ ) or the like may be used. An example in which O ₃ gas is used as the O-containing gas has been described, but the present invention is not limited to this, and for example, oxygen (O ₂ ), water (H ₂ O), hydrogen peroxide (H ₂ O ₂ ), and O ₂ plasma are described. A combination of hydrogen peroxide (H ₂ ) plasma and the like can also be applied. The example in which N ₂ gas is used has been described as the inert gas, but the present invention is not limited to this, and for example, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used.

Further, although an example in which an Al-containing gas is used as the first gas is shown, the following gas can be used without limitation. For example, a gas containing a silicon (Si) element, a gas containing a titanium (Ti) element, a gas containing a tantalum (Ta) element, a gas containing a zirconium (Zr) element, and a hafnium (Hf) element. Gas, gas containing tungsten (W) element, gas containing niobium (Nb) element, gas containing molybdenum (Mo) element, gas containing tungsten (W) element, containing yttrium (Y) element A gas, a gas containing a La (lantern) element, a gas containing a strontium (Sr) element, and the like. Further, a gas containing a plurality of elements described in the present disclosure may be used. Further, a plurality of gases containing any of the elements described in the present disclosure may be used.

Further, an example in which an oxygen-containing gas is used as the second gas is shown, but the present invention is not limited to this, and the following gases can be used. For example, it contains a gas containing a nitrogen (N) element, a gas containing a hydrogen (H) element, a gas containing a carbon (C) element, a gas containing a boron (B) element, and a phosphorus (P) element. Gas, etc. Further, a gas containing a plurality of elements described in the present disclosure may be used. Further, a plurality of gases containing any of the elements described in the present disclosure may be used.

In the above description, an example of supplying the first gas and the second gas in order is shown, but the substrate processing apparatus 10 of the present disclosure seems to have a timing of supplying the first gas and the second gas in parallel. It may be configured in. In the process of supplying the first gas and the second gas in parallel, the film forming rate can be significantly increased, so that the time of the film forming step S300 can be shortened, and the substrate processing apparatus 10 can be used. It is possible to improve the manufacturing throughput.

Further, in the above description, an example of forming an AlO film on the substrate has been described. However, the present disclosure is not limited to this aspect. It is also used for other membrane types. By appropriately combining the above-mentioned gases, for example, titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), molybdenum (Mo), tungsten (W), yttrium (Y). , La (lanthanum), strontium (Sr), silicon (Si), a nitride film containing at least one of these elements, a carbon dioxide film, an oxide film, an acid carbide film, an acid nitride film, an acid. It can also be applied to a charcoal nitride film, a molybdenum nitride film, a molybdenum nitride film, a single metal element film, and the like.

Further, in the above description, the process of depositing the film on the substrate has been described. However, the present disclosure is not limited to this aspect. It can also be applied to other processes. For example, the wafer 200 may be configured to supply only the second gas (reaction gas) for processing. By supplying only the second gas to the wafer 200, it is possible to perform a treatment such as oxidation on the surface of the wafer 200. In this case, it is possible to suppress deterioration (oxidation) of the members arranged in the low temperature region.

Further, in the second example of the above-described embodiment, TEMAZ is exemplified as an organic raw material, but the present invention is not limited to this, and other raw materials can also be applied. For example, organic Hf raw materials such as tetrakisethylmethylaminohafnium (Hf [N (CH ₃ ) CH ₂ CH ₃ ] ₄ , TEMAH), organic Al raw materials such as trimethylaluminum ((CH ₃ ) ₃ Al, TMA), Organic Si raw materials such as trisdimethylaminosilane (SiH (N (CH ₃ ) ₂ ) ₃ , TDMS), organic Ti raw materials such as tetrakisdimethylaminotitalum (Ti [N (CH ₃ ) ₂ ] ₄ , TDMAT), penta Organic Ta raw materials such as kissdimethylaminotantalum (Ta (N (CH ₃ ) ₂ ) ₅ , PDMAT) and the like can also be applied.

Further, in the second example of the above-described embodiment _, an example in which O3 gas is used in the film forming step is shown, but the present invention is not limited to this, and other raw materials can be applied as long as they are oxygen-containing gas. .. For example, O ₂ , O ₂ plasma, H ₂ O, H ₂ O ₂ , N ₂ O and the like can also be applied.

In addition, the above-described embodiments and modifications can be used in combination as appropriate. Further, the processing procedure and processing conditions at this time can be the same as the processing procedures and processing conditions of the above-described embodiments and modifications.

Further, in the above description, the vertical substrate processing apparatus that processes a plurality of substrates at one time has been described, but the technique of the present disclosure can also be applied to a single-wafer processing apparatus that processes one substrate at a time. Is.

Further, in the above description, as the substrate processing executed by the substrate processing apparatus 10, the film forming process is performed as one step of the manufacturing process of the semiconductor device, but the present invention is not limited to this. Other board processing is also feasible. Further, in addition to the manufacturing process of the semiconductor device, it is possible to execute the substrate processing performed in one step of the manufacturing process of the display device (display device), one step of the ceramic substrate manufacturing process, and the like.

<Preferable aspect of the present disclosure>
Hereinafter, preferred embodiments of the present disclosure will be described.

(Appendix 1)
According to one aspect of the present disclosure
A substrate support having a support column made of metal and a plurality of support portions provided on the support column and configured to support a plurality of substrates in multiple stages (in a substantially horizontal posture and at predetermined intervals in the vertical direction). Ingredients and
A processing chamber for accommodating the plurality of substrates supported by the substrate support, and
A heating unit that heats the plurality of substrates housed in the processing chamber,
Equipped with
The plurality of support portions are provided with a substrate processing apparatus in which at least the contact portions in contact with the plurality of substrates are made of at least one of a metal oxide or a non-metal.

(Appendix 2)
The substrate processing apparatus according to Appendix 1, wherein the plurality of support portions are composed of a plurality of support pins fixed to the support column.

(Appendix 3)
The substrate processing apparatus according to Appendix 1 or 2, wherein the plurality of support portions are at least partially composed of the metal.

(Appendix 4)
The substrate processing apparatus according to Appendix 1, wherein the plurality of support portions are composed of a plurality of grooves provided in the support column.

(Appendix 5)
Note 2 The contact portion is composed of at least one of the metal oxide film or the non-metal film that covers the plurality of support portions (the plurality of support pins or the plurality of grooves). ~ 4 substrate processing equipment.

(Appendix 6)
The substrate processing apparatus according to Appendix 3 or 4, wherein the contact portion is composed of a piece-shaped member formed of at least one of the metal oxide and the non-metal.

(Appendix 7)
Of the plurality of support portions, at least a part of the portion made of the metal is covered with at least one of the film of the metal oxide or the film of the non-metal material. Device.

(Appendix 8)
The substrate processing apparatus according to Appendix 1 or 2, wherein the plurality of supports are formed of at least one of the metal oxide and the non-metal.

(Appendix 9)
The substrate processing apparatus according to Supplementary note 1 to 8, wherein the support column is covered with at least one of the metal oxide film and the non-metal film.

(Appendix 10)
The substrate processing apparatus according to Supplementary note 1 to 8, wherein at least a part of the support column is not covered with the film of the non-metal or the film of the metal oxide, and the surface of the metal is exposed.

(Appendix 11)
The substrate processing apparatus according to Supplementary note 1 to 10, wherein the non-metallic substance is at least one of silicon (Si), silicon oxide (SiO, quartz), silicon nitride (SiN), and silicon carbide (SiC).

(Appendix 12)
The substrate processing apparatus according to Supplementary note 1 to 10, wherein the metal oxide is at least one of chromium oxide (CrO) and aluminum oxide (AlO).

(Appendix 13)
The substrate processing apparatus according to Appendix 8, wherein each of the plurality of support pins has a recess and is fixed to the column by a columnar member inserted into the recess.

(Appendix 14)
The strut has a plurality of recesses or through holes.
The substrate processing apparatus according to Appendix 8, wherein the plurality of support pins each have a convex portion that fits with the plurality of concave portions or through holes.

(Appendix 15)
According to another aspect of the present disclosure.
Supports made of metal and
A plurality of support portions provided on the support column and configured to support a plurality of substrates in multiple stages (in a substantially horizontal posture at predetermined intervals in the vertical direction) are provided.
As the plurality of supports, a substrate support is provided in which at least the contact portions in contact with the plurality of substrates are made of at least one of a metal oxide or a non-metal.

(Appendix 16)
According to another aspect of the present disclosure.
A substrate support having a support column made of metal and a plurality of support portions provided on the support column and configured to support a plurality of substrates in multiple stages (in a substantially horizontal posture and at predetermined intervals in the vertical direction). A step of carrying the tool into the processing chamber of the substrate processing apparatus with the plurality of substrates supported by the plurality of supporting portions.
A step of heating the plurality of substrates carried into the processing chamber, and
The process of carrying out the plurality of substrates after processing from the processing chamber, and
Provided is a method for manufacturing a semiconductor device, wherein the plurality of support portions are formed of at least one of a metal oxide or a non-metal contact portion in contact with the plurality of substrates.

10: Substrate processing device 200: Wafer (board)
201: Processing chamber 207: Heater (heating part)
217: Boat (board support)

Claims (16)

It has a support column made of metal, and a plurality of support portions provided on the support column and configured to partially support the outer periphery of each of the plurality of substrates so as to support the plurality of substrates in multiple stages. Board support and
A processing chamber for accommodating the plurality of substrates supported by the substrate support, and
A heating unit that heats the plurality of substrates housed in the processing chamber,
Equipped with
In the plurality of support portions, at least a contact portion in contact with the plurality of substrates is formed of a non-metal material , and is provided over a range from a position at a predetermined distance from the support column to the tip of the plurality of support portions. A substrate processing device composed of a piece-shaped member . The substrate processing apparatus according to claim 1, wherein the plurality of support portions are composed of a plurality of support pins fixed to the support column. The substrate processing apparatus according to claim 1 or 2, wherein the plurality of support portions are at least partially composed of the metal. The substrate processing apparatus according to claim 1, wherein the plurality of support portions are composed of a plurality of grooves provided in the support column. The substrate processing apparatus according to any one of claims 1 to 4, wherein the non-metal substance is at least one of silicon oxide, silicon nitride, or silicon carbide. The substrate treatment according to claim 3, wherein at least a part of the portion made of the metal among the plurality of support portions is covered with at least one of a film of a metal oxide or a film of a non-metal material. Device. The substrate processing apparatus according to claim 3, wherein the metal is exposed on the surface of at least a part of the portion made of the metal among the plurality of support portions. The substrate processing apparatus according to any one of claims 1 to 7, wherein the support column is covered with at least one of a film of a metal oxide or a film of a non-metal material. The substrate processing apparatus according to any one of claims 1 to 7, wherein the metal is exposed on the surface of at least a part of the support column. The substrate processing apparatus according to claim 9, wherein the plurality of substrates are placed at positions separated from the columns on the plurality of supports by 8 mm or more. The substrate processing apparatus according to claim 6, wherein the metal oxide film is at least one of a chromium oxide film and an aluminum oxide film. The substrate processing apparatus according to claim 6 or 8, wherein the film of the non-metal material is at least one of a silicon film, a silicon oxide film, a silicon nitride film, and a silicon carbide film. The substrate processing apparatus according to any one of claims 1 to 12, wherein the diameter of the column is 5 mm or more and 10 mm or less. Supports made of metal and
A plurality of support portions provided on the support column and configured to partially support the outer periphery of each of the plurality of substrates to support the plurality of substrates in multiple stages.
Equipped with
In the plurality of support portions, at least a contact portion in contact with the plurality of substrates is formed of a non-metal material , and is provided over a range from a position at a predetermined distance from the support column to the tip of the plurality of support portions. A substrate support made up of piece-shaped members . It has a support column made of metal, and a plurality of support portions provided on the support column and configured to partially support the outer periphery of each of the plurality of substrates so as to support the plurality of substrates in multiple stages. A step of carrying the substrate support into the processing chamber of the substrate processing apparatus with the plurality of substrates supported by the plurality of supports.
A step of heating the plurality of substrates carried into the processing chamber, and
The process of carrying out the plurality of substrates after processing from the processing chamber, and
In the plurality of support portions, at least the contact portions in contact with the plurality of substrates are formed of a non-metal material, and range from a position at a predetermined distance from the support column to the tips of the plurality of support portions. A method for manufacturing a semiconductor device, which is composed of a piece-shaped member provided over the entire surface . It has a support column made of metal, and a plurality of support portions provided on the support column and configured to partially support the outer periphery of each of the plurality of substrates so as to support the plurality of substrates in multiple stages. A step of carrying the substrate support into the processing chamber of the substrate processing apparatus with the plurality of substrates supported by the plurality of supports.
A step of heating the plurality of substrates carried into the processing chamber, and
The process of carrying out the plurality of substrates after processing from the processing chamber, and
In the plurality of support portions, at least the contact portions in contact with the plurality of substrates are formed of a non-metal material, and range from a position at a predetermined distance from the support column to the tips of the plurality of support portions. A substrate processing method composed of piece-shaped members provided over the entire surface.

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