JP7013120B2 - 光検出装置および光検出システム - Google Patents

光検出装置および光検出システム Download PDF

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JP7013120B2
JP7013120B2 JP2016150330A JP2016150330A JP7013120B2 JP 7013120 B2 JP7013120 B2 JP 7013120B2 JP 2016150330 A JP2016150330 A JP 2016150330A JP 2016150330 A JP2016150330 A JP 2016150330A JP 7013120 B2 JP7013120 B2 JP 7013120B2
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semiconductor region
potential
photodetector
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type semiconductor
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JP2018019039A5 (enExample
JP2018019039A (ja
Inventor
和浩 森本
一 池田
旬史 岩田
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Canon Inc
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Canon Inc
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Priority to JP2016150330A priority Critical patent/JP7013120B2/ja
Priority to US15/656,490 priority patent/US10497818B2/en
Priority to CN201710628241.4A priority patent/CN107665897B/zh
Publication of JP2018019039A publication Critical patent/JP2018019039A/ja
Publication of JP2018019039A5 publication Critical patent/JP2018019039A5/ja
Priority to US16/662,713 priority patent/US11309442B2/en
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JP2016150330A 2016-07-29 2016-07-29 光検出装置および光検出システム Active JP7013120B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016150330A JP7013120B2 (ja) 2016-07-29 2016-07-29 光検出装置および光検出システム
US15/656,490 US10497818B2 (en) 2016-07-29 2017-07-21 Photodetection device and photodetection system
CN201710628241.4A CN107665897B (zh) 2016-07-29 2017-07-28 光检测设备和光检测系统
US16/662,713 US11309442B2 (en) 2016-07-29 2019-10-24 Photodetection device and photodetection system

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JP2016150330A JP7013120B2 (ja) 2016-07-29 2016-07-29 光検出装置および光検出システム

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JP2018019039A5 JP2018019039A5 (enExample) 2019-06-20
JP7013120B2 true JP7013120B2 (ja) 2022-01-31

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636818B2 (en) * 2018-04-04 2020-04-28 Avago Technologies International Sales Pte. Limited Semiconductor device and sensor including a single photon avalanche diode (SPAD) structure
JP7236692B2 (ja) * 2019-03-27 2023-03-10 パナソニックＩｐマネジメント株式会社 光検出器及び光検出器の製造方法
JP7379117B2 (ja) * 2019-11-27 2023-11-14 キヤノン株式会社 光電変換装置及び光電変換システム
JP7638664B2 (ja) * 2020-01-31 2025-03-04 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7488782B2 (ja) * 2021-03-03 2024-05-22 日立Ｇｅニュークリア・エナジー株式会社 フォトダイオード
CN113299787B (zh) * 2021-05-21 2022-04-29 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009020109A (ja) 2007-07-16 2009-01-29 Hilti Ag パルス反射混合法を用いた手持ち式レーザ距離測定器
JP2009525619A (ja) 2006-02-01 2009-07-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ガイガーモード・アバランシェ・フォトダイオード
JP2009535821A (ja) 2006-04-25 2009-10-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法
US20100148040A1 (en) 2008-12-17 2010-06-17 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and adjustable quenching resistor, photodiode array, and manufacturing method thereof
JP2011159756A (ja) 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014225647A (ja) 2013-04-01 2014-12-04 オムニヴィジョン テクノロジーズ インコーポレイテッド バイアス深溝分離部を有する高度光子検出装置
JP2015056622A (ja) 2013-09-13 2015-03-23 株式会社リコー 半導体装置
JP2015084392A (ja) 2013-10-25 2015-04-30 浜松ホトニクス株式会社 光検出器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009525619A (ja) 2006-02-01 2009-07-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ガイガーモード・アバランシェ・フォトダイオード
JP2009535821A (ja) 2006-04-25 2009-10-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法
JP2009020109A (ja) 2007-07-16 2009-01-29 Hilti Ag パルス反射混合法を用いた手持ち式レーザ距離測定器
US20100148040A1 (en) 2008-12-17 2010-06-17 Stmicroelectronics S.R.L. Geiger-mode photodiode with integrated and adjustable quenching resistor, photodiode array, and manufacturing method thereof
JP2011159756A (ja) 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2014225647A (ja) 2013-04-01 2014-12-04 オムニヴィジョン テクノロジーズ インコーポレイテッド バイアス深溝分離部を有する高度光子検出装置
JP2015056622A (ja) 2013-09-13 2015-03-23 株式会社リコー 半導体装置
JP2015084392A (ja) 2013-10-25 2015-04-30 浜松ホトニクス株式会社 光検出器

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