JP7003150B2 - 確率性を仮定した計量および加工 - Google Patents
確率性を仮定した計量および加工 Download PDFInfo
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- JP7003150B2 JP7003150B2 JP2019552277A JP2019552277A JP7003150B2 JP 7003150 B2 JP7003150 B2 JP 7003150B2 JP 2019552277 A JP2019552277 A JP 2019552277A JP 2019552277 A JP2019552277 A JP 2019552277A JP 7003150 B2 JP7003150 B2 JP 7003150B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
- G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
- G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B23/00—Testing or monitoring of control systems or parts thereof
- G05B23/02—Electric testing or monitoring
- G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
- G05B23/0259—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
- G05B23/0286—Modifications to the monitored process, e.g. stopping operation or adapting control
- G05B23/0294—Optimizing process, e.g. process efficiency, product quality
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Automation & Control Theory (AREA)
- Artificial Intelligence (AREA)
- Evolutionary Computation (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762475072P | 2017-03-22 | 2017-03-22 | |
| US62/475,072 | 2017-03-22 | ||
| US15/612,279 US10474042B2 (en) | 2017-03-22 | 2017-06-02 | Stochastically-aware metrology and fabrication |
| US15/612,279 | 2017-06-02 | ||
| PCT/US2018/022769 WO2018175213A1 (en) | 2017-03-22 | 2018-03-16 | Stochastically-aware metrology and fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515077A JP2020515077A (ja) | 2020-05-21 |
| JP2020515077A5 JP2020515077A5 (https=) | 2021-04-22 |
| JP7003150B2 true JP7003150B2 (ja) | 2022-01-20 |
Family
ID=63582526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019552277A Active JP7003150B2 (ja) | 2017-03-22 | 2018-03-16 | 確率性を仮定した計量および加工 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10474042B2 (https=) |
| JP (1) | JP7003150B2 (https=) |
| KR (1) | KR102327900B1 (https=) |
| TW (1) | TWI751305B (https=) |
| WO (1) | WO2018175213A1 (https=) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10437951B2 (en) * | 2017-08-23 | 2019-10-08 | International Business Machines Corporation | Care area generation by detection optimized methodology |
| US11088039B2 (en) * | 2017-10-23 | 2021-08-10 | Applied Materials, Inc. | Data management and mining to correlate wafer alignment, design, defect, process, tool, and metrology data |
| WO2019162346A1 (en) * | 2018-02-23 | 2019-08-29 | Asml Netherlands B.V. | Methods for training machine learning model for computation lithography |
| US11775714B2 (en) * | 2018-03-09 | 2023-10-03 | Pdf Solutions, Inc. | Rational decision-making tool for semiconductor processes |
| US10592635B2 (en) * | 2018-05-31 | 2020-03-17 | International Business Machines Corporation | Generating synthetic layout patterns by feedforward neural network based variational autoencoders |
| US10606975B2 (en) * | 2018-05-31 | 2020-03-31 | International Business Machines Corporation | Coordinates-based generative adversarial networks for generating synthetic physical design layout patterns |
| US10706200B2 (en) | 2018-06-05 | 2020-07-07 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns of integrated multi-layers |
| KR102666072B1 (ko) * | 2018-06-05 | 2024-05-17 | 삼성전자주식회사 | 기계 학습 장치 및 기계 학습 장치의 학습 방법 |
| US10699055B2 (en) | 2018-06-12 | 2020-06-30 | International Business Machines Corporation | Generative adversarial networks for generating physical design layout patterns |
| US10818001B2 (en) * | 2018-09-07 | 2020-10-27 | Kla-Tencor Corporation | Using stochastic failure metrics in semiconductor manufacturing |
| KR102563023B1 (ko) * | 2018-11-12 | 2023-08-03 | 주식회사 히타치하이테크 | 결함의 발생을 추정하는 시스템, 및 컴퓨터 가독 매체 |
| JP7579267B2 (ja) * | 2019-02-25 | 2024-11-07 | アプライド マテリアルズ イスラエル リミテッド | 希少確率欠陥を検出するシステムおよび方法 |
| US10990019B2 (en) * | 2019-04-09 | 2021-04-27 | Kla Corporation | Stochastic reticle defect dispositioning |
| EP3994526A1 (en) * | 2019-07-03 | 2022-05-11 | ASML Netherlands B.V. | Method for applying a deposition model in a semiconductor manufacturing process |
| IL324560A (en) * | 2019-09-05 | 2026-01-01 | Asml Netherlands Bv | Method for determining defectiveness of pattern based on after development image |
| US12332573B2 (en) | 2019-09-05 | 2025-06-17 | Asml Netherlands B.V. | Method for determining defectiveness of pattern based on after development image |
| CN114514473B (zh) * | 2019-09-25 | 2025-09-23 | 美商新思科技有限公司 | 基于缺陷概率分布和关键尺寸变化的光刻改进 |
| KR102748784B1 (ko) * | 2019-10-16 | 2024-12-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 패턴들을 형성하는 방법 및 리소그래피 시스템 |
| KR102850033B1 (ko) * | 2019-12-19 | 2025-08-22 | 삼성전자주식회사 | 광학 근접 보상 검증 방법 및 이를 포함하는 반도체 제조 방법 |
| CN115023798A (zh) * | 2020-01-27 | 2022-09-06 | 朗姆研究公司 | 半导体制造工艺的性能预测器 |
| KR20230052877A (ko) * | 2020-08-17 | 2023-04-20 | 도쿄엘렉트론가부시키가이샤 | 반도체 제조를 위해 절대 참조물을 통해 오버레이 결과물을 제조하기 위한 방법 |
| EP4200671B1 (en) * | 2020-08-19 | 2025-09-03 | ASML Netherlands B.V. | Systems and methods for image-based pattern selection |
| US11810284B2 (en) * | 2020-08-21 | 2023-11-07 | Kla Corporation | Unsupervised learning for repeater-defect detection |
| US11270054B1 (en) * | 2020-08-31 | 2022-03-08 | Siemens Industry Software Inc. | Method and system for calculating printed area metric indicative of stochastic variations of the lithographic process |
| KR102946615B1 (ko) | 2020-12-28 | 2026-04-01 | 삼성전자주식회사 | 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템 |
| US11613114B2 (en) * | 2021-04-29 | 2023-03-28 | Lead Technologies, Inc. | Method, apparatus, and non-transitory computer-readable storage medium for altering a digital image for a printing job |
| US20230051330A1 (en) * | 2021-08-16 | 2023-02-16 | Applied Materials Inc. | Using defect models to estimate defect risk and optimize process recipes |
| US12306531B2 (en) * | 2021-08-20 | 2025-05-20 | Samsung Electronics Co., Ltd. | Lithography and method of fabricating semiconductor device using the same |
| US20230092729A1 (en) * | 2021-09-20 | 2023-03-23 | Kla Corporation | Semiconductor Profile Measurement Based On A Scanning Conditional Model |
| CN114861474B (zh) * | 2022-07-08 | 2022-10-04 | 西南交通大学 | 一种智能泵阀系统性能仿真处理方法及云计算服务系统 |
| US11966156B2 (en) * | 2022-08-16 | 2024-04-23 | Kla Corporation | Lithography mask repair by simulation of photoresist thickness evolution |
| US12561790B2 (en) * | 2023-09-26 | 2026-02-24 | Kla Corporation | Method to calibrate, predict, and control stochastic defects in EUV lithography |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120278768A1 (en) | 2011-04-29 | 2012-11-01 | Micron Technology, Inc. | Systems and methods for stochastic models of mask process variability |
| JP2013511152A (ja) | 2009-11-12 | 2013-03-28 | ケーエルエー−テンカー・コーポレーション | フォトレジストシミュレーション |
| JP2017505462A (ja) | 2014-02-11 | 2017-02-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 任意パターンにおける確率的変動を計算するためのモデル |
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| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| JP4351522B2 (ja) | 2003-11-28 | 2009-10-28 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査装置およびパターン欠陥検査方法 |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| JP5175577B2 (ja) * | 2008-02-18 | 2013-04-03 | 株式会社日立ハイテクノロジーズ | 集積回路パターンの欠陥検査方法、及びその装置 |
| US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
| US8504949B2 (en) * | 2011-07-26 | 2013-08-06 | Mentor Graphics Corporation | Hybrid hotspot detection |
| US8755045B2 (en) * | 2012-01-06 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting method for forming semiconductor device |
| US20130252350A1 (en) | 2012-03-26 | 2013-09-26 | Globalfoundries Singapore Pte. Ltd. | System and method for generating care areas for defect inspection |
| US10769320B2 (en) * | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US10101670B2 (en) * | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
| US9098891B2 (en) | 2013-04-08 | 2015-08-04 | Kla-Tencor Corp. | Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology |
| US9875946B2 (en) * | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
| US9383661B2 (en) * | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
| US10935893B2 (en) * | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
| US9494853B2 (en) * | 2013-12-18 | 2016-11-15 | Cypress Semiconductor Corporation | Increasing lithographic depth of focus window using wafer topography |
| US10747830B2 (en) * | 2014-11-21 | 2020-08-18 | Mesh Labs Inc. | Method and system for displaying electronic information |
| TWI620980B (zh) * | 2015-02-13 | 2018-04-11 | Asml荷蘭公司 | 影像對數斜率(ils)最佳化 |
| US10018571B2 (en) | 2015-05-28 | 2018-07-10 | Kla-Tencor Corporation | System and method for dynamic care area generation on an inspection tool |
| US10163733B2 (en) * | 2016-05-31 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of extracting defects |
-
2017
- 2017-06-02 US US15/612,279 patent/US10474042B2/en active Active
-
2018
- 2018-03-16 JP JP2019552277A patent/JP7003150B2/ja active Active
- 2018-03-16 WO PCT/US2018/022769 patent/WO2018175213A1/en not_active Ceased
- 2018-03-16 KR KR1020197030905A patent/KR102327900B1/ko active Active
- 2018-03-21 TW TW107109574A patent/TWI751305B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013511152A (ja) | 2009-11-12 | 2013-03-28 | ケーエルエー−テンカー・コーポレーション | フォトレジストシミュレーション |
| US20120278768A1 (en) | 2011-04-29 | 2012-11-01 | Micron Technology, Inc. | Systems and methods for stochastic models of mask process variability |
| JP2017505462A (ja) | 2014-02-11 | 2017-02-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 任意パターンにおける確率的変動を計算するためのモデル |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102327900B1 (ko) | 2021-11-18 |
| TWI751305B (zh) | 2022-01-01 |
| TW201841075A (zh) | 2018-11-16 |
| US10474042B2 (en) | 2019-11-12 |
| WO2018175213A1 (en) | 2018-09-27 |
| US20180275523A1 (en) | 2018-09-27 |
| KR20190123352A (ko) | 2019-10-31 |
| JP2020515077A (ja) | 2020-05-21 |
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