TWI751305B - 隨機察覺度量衡及製造 - Google Patents

隨機察覺度量衡及製造 Download PDF

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TWI751305B
TWI751305B TW107109574A TW107109574A TWI751305B TW I751305 B TWI751305 B TW I751305B TW 107109574 A TW107109574 A TW 107109574A TW 107109574 A TW107109574 A TW 107109574A TW I751305 B TWI751305 B TW I751305B
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metrology
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TW107109574A
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TW201841075A (zh
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約翰 J 拜佛爾
摩西 E 普瑞歐
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美商克萊譚克公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00Testing or monitoring of control systems or parts thereof
    • G05B23/02Electric testing or monitoring
    • G05B23/0205Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0243Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
    • G05B23/0254Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95676Masks, reticles, shadow masks
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00Testing or monitoring of control systems or parts thereof
    • G05B23/02Electric testing or monitoring
    • G05B23/0205Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0259Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterized by the response to fault detection
    • G05B23/0286Modifications to the monitored process, e.g. stopping operation or adapting control
    • G05B23/0294Optimizing process, e.g. process efficiency, product quality

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Automation & Control Theory (AREA)
  • Artificial Intelligence (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW107109574A 2017-03-22 2018-03-21 隨機察覺度量衡及製造 TWI751305B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762475072P 2017-03-22 2017-03-22
US62/475,072 2017-03-22
US15/612,279 US10474042B2 (en) 2017-03-22 2017-06-02 Stochastically-aware metrology and fabrication
US15/612,279 2017-06-02

Publications (2)

Publication Number Publication Date
TW201841075A TW201841075A (zh) 2018-11-16
TWI751305B true TWI751305B (zh) 2022-01-01

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US (1) US10474042B2 (https=)
JP (1) JP7003150B2 (https=)
KR (1) KR102327900B1 (https=)
TW (1) TWI751305B (https=)
WO (1) WO2018175213A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10437951B2 (en) * 2017-08-23 2019-10-08 International Business Machines Corporation Care area generation by detection optimized methodology
US11088039B2 (en) * 2017-10-23 2021-08-10 Applied Materials, Inc. Data management and mining to correlate wafer alignment, design, defect, process, tool, and metrology data
WO2019162346A1 (en) * 2018-02-23 2019-08-29 Asml Netherlands B.V. Methods for training machine learning model for computation lithography
US11775714B2 (en) * 2018-03-09 2023-10-03 Pdf Solutions, Inc. Rational decision-making tool for semiconductor processes
US10592635B2 (en) * 2018-05-31 2020-03-17 International Business Machines Corporation Generating synthetic layout patterns by feedforward neural network based variational autoencoders
US10606975B2 (en) * 2018-05-31 2020-03-31 International Business Machines Corporation Coordinates-based generative adversarial networks for generating synthetic physical design layout patterns
US10706200B2 (en) 2018-06-05 2020-07-07 International Business Machines Corporation Generative adversarial networks for generating physical design layout patterns of integrated multi-layers
KR102666072B1 (ko) * 2018-06-05 2024-05-17 삼성전자주식회사 기계 학습 장치 및 기계 학습 장치의 학습 방법
US10699055B2 (en) 2018-06-12 2020-06-30 International Business Machines Corporation Generative adversarial networks for generating physical design layout patterns
US10818001B2 (en) * 2018-09-07 2020-10-27 Kla-Tencor Corporation Using stochastic failure metrics in semiconductor manufacturing
KR102563023B1 (ko) * 2018-11-12 2023-08-03 주식회사 히타치하이테크 결함의 발생을 추정하는 시스템, 및 컴퓨터 가독 매체
JP7579267B2 (ja) * 2019-02-25 2024-11-07 アプライド マテリアルズ イスラエル リミテッド 希少確率欠陥を検出するシステムおよび方法
US10990019B2 (en) * 2019-04-09 2021-04-27 Kla Corporation Stochastic reticle defect dispositioning
EP3994526A1 (en) * 2019-07-03 2022-05-11 ASML Netherlands B.V. Method for applying a deposition model in a semiconductor manufacturing process
IL324560A (en) * 2019-09-05 2026-01-01 Asml Netherlands Bv Method for determining defectiveness of pattern based on after development image
US12332573B2 (en) 2019-09-05 2025-06-17 Asml Netherlands B.V. Method for determining defectiveness of pattern based on after development image
CN114514473B (zh) * 2019-09-25 2025-09-23 美商新思科技有限公司 基于缺陷概率分布和关键尺寸变化的光刻改进
KR102748784B1 (ko) * 2019-10-16 2024-12-30 어플라이드 머티어리얼스, 인코포레이티드 패턴들을 형성하는 방법 및 리소그래피 시스템
KR102850033B1 (ko) * 2019-12-19 2025-08-22 삼성전자주식회사 광학 근접 보상 검증 방법 및 이를 포함하는 반도체 제조 방법
CN115023798A (zh) * 2020-01-27 2022-09-06 朗姆研究公司 半导体制造工艺的性能预测器
KR20230052877A (ko) * 2020-08-17 2023-04-20 도쿄엘렉트론가부시키가이샤 반도체 제조를 위해 절대 참조물을 통해 오버레이 결과물을 제조하기 위한 방법
EP4200671B1 (en) * 2020-08-19 2025-09-03 ASML Netherlands B.V. Systems and methods for image-based pattern selection
US11810284B2 (en) * 2020-08-21 2023-11-07 Kla Corporation Unsupervised learning for repeater-defect detection
US11270054B1 (en) * 2020-08-31 2022-03-08 Siemens Industry Software Inc. Method and system for calculating printed area metric indicative of stochastic variations of the lithographic process
KR102946615B1 (ko) 2020-12-28 2026-04-01 삼성전자주식회사 반도체 집적회로 레이아웃의 확률적 취약점 검출 방법 및 이를 수행하는 컴퓨터 시스템
US11613114B2 (en) * 2021-04-29 2023-03-28 Lead Technologies, Inc. Method, apparatus, and non-transitory computer-readable storage medium for altering a digital image for a printing job
US20230051330A1 (en) * 2021-08-16 2023-02-16 Applied Materials Inc. Using defect models to estimate defect risk and optimize process recipes
US12306531B2 (en) * 2021-08-20 2025-05-20 Samsung Electronics Co., Ltd. Lithography and method of fabricating semiconductor device using the same
US20230092729A1 (en) * 2021-09-20 2023-03-23 Kla Corporation Semiconductor Profile Measurement Based On A Scanning Conditional Model
CN114861474B (zh) * 2022-07-08 2022-10-04 西南交通大学 一种智能泵阀系统性能仿真处理方法及云计算服务系统
US11966156B2 (en) * 2022-08-16 2024-04-23 Kla Corporation Lithography mask repair by simulation of photoresist thickness evolution
US12561790B2 (en) * 2023-09-26 2026-02-24 Kla Corporation Method to calibrate, predict, and control stochastic defects in EUV lithography

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120278768A1 (en) * 2011-04-29 2012-11-01 Micron Technology, Inc. Systems and methods for stochastic models of mask process variability
US20130031518A1 (en) * 2011-07-26 2013-01-31 Juan Andres Torres Robles Hybrid Hotspot Detection
TW201625915A (zh) * 2014-11-21 2016-07-16 克萊譚克公司 用於程序窗特徵化之虛擬檢測系統
US20170010538A1 (en) * 2014-02-11 2017-01-12 Asml Netherlands B.V. Model for calculating a stochastic variation in an arbitrary pattern

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
JP4351522B2 (ja) 2003-11-28 2009-10-28 株式会社日立ハイテクノロジーズ パターン欠陥検査装置およびパターン欠陥検査方法
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP5175577B2 (ja) * 2008-02-18 2013-04-03 株式会社日立ハイテクノロジーズ 集積回路パターンの欠陥検査方法、及びその装置
US8589827B2 (en) 2009-11-12 2013-11-19 Kla-Tencor Corporation Photoresist simulation
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US8755045B2 (en) * 2012-01-06 2014-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Detecting method for forming semiconductor device
US20130252350A1 (en) 2012-03-26 2013-09-26 Globalfoundries Singapore Pte. Ltd. System and method for generating care areas for defect inspection
US10769320B2 (en) * 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US10101670B2 (en) * 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9098891B2 (en) 2013-04-08 2015-08-04 Kla-Tencor Corp. Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology
US9875946B2 (en) * 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9383661B2 (en) * 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) * 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
US9494853B2 (en) * 2013-12-18 2016-11-15 Cypress Semiconductor Corporation Increasing lithographic depth of focus window using wafer topography
TWI620980B (zh) * 2015-02-13 2018-04-11 Asml荷蘭公司 影像對數斜率(ils)最佳化
US10018571B2 (en) 2015-05-28 2018-07-10 Kla-Tencor Corporation System and method for dynamic care area generation on an inspection tool
US10163733B2 (en) * 2016-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of extracting defects

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120278768A1 (en) * 2011-04-29 2012-11-01 Micron Technology, Inc. Systems and methods for stochastic models of mask process variability
US20130031518A1 (en) * 2011-07-26 2013-01-31 Juan Andres Torres Robles Hybrid Hotspot Detection
US20170010538A1 (en) * 2014-02-11 2017-01-12 Asml Netherlands B.V. Model for calculating a stochastic variation in an arbitrary pattern
TW201625915A (zh) * 2014-11-21 2016-07-16 克萊譚克公司 用於程序窗特徵化之虛擬檢測系統

Also Published As

Publication number Publication date
KR102327900B1 (ko) 2021-11-18
JP7003150B2 (ja) 2022-01-20
TW201841075A (zh) 2018-11-16
US10474042B2 (en) 2019-11-12
WO2018175213A1 (en) 2018-09-27
US20180275523A1 (en) 2018-09-27
KR20190123352A (ko) 2019-10-31
JP2020515077A (ja) 2020-05-21

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