JP6999596B2 - 基板処理装置、半導体装置の製造方法及びプログラム - Google Patents

基板処理装置、半導体装置の製造方法及びプログラム Download PDF

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JP6999596B2
JP6999596B2 JP2019056620A JP2019056620A JP6999596B2 JP 6999596 B2 JP6999596 B2 JP 6999596B2 JP 2019056620 A JP2019056620 A JP 2019056620A JP 2019056620 A JP2019056620 A JP 2019056620A JP 6999596 B2 JP6999596 B2 JP 6999596B2
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buffer chamber
substrate
reaction tube
processing gas
plasma
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JP2020161539A5 (enExample
JP2020161539A (ja
Inventor
大介 原
橘 八幡
剛 竹田
健治 大野
一彦 山崎
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2019056620A priority Critical patent/JP6999596B2/ja
Priority to TW109105787A priority patent/TWI789573B/zh
Priority to KR1020200029577A priority patent/KR102387812B1/ko
Priority to US16/815,284 priority patent/US20200312632A1/en
Priority to CN202010177044.7A priority patent/CN111739779A/zh
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    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
JP2019056620A 2019-03-25 2019-03-25 基板処理装置、半導体装置の製造方法及びプログラム Active JP6999596B2 (ja)

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Application Number Priority Date Filing Date Title
JP2019056620A JP6999596B2 (ja) 2019-03-25 2019-03-25 基板処理装置、半導体装置の製造方法及びプログラム
TW109105787A TWI789573B (zh) 2019-03-25 2020-02-24 半導體裝置之製造方法、基板處理裝置及記錄媒體
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US16/815,284 US20200312632A1 (en) 2019-03-25 2020-03-11 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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