JP6994384B2 - 金属‐金属指組み光伝導アンテナ、及び金属‐金属指組み光伝導アンテナの製造方法 - Google Patents
金属‐金属指組み光伝導アンテナ、及び金属‐金属指組み光伝導アンテナの製造方法 Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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Description
選択エッチング停止層を形成する層を第1基板に形成する工程と、
選択エッチング停止層上に層を形成する工程と、
上記層上にテラヘルツ波を反射する材料からなる層を形成する工程と、
上記テラヘルツ波を反射する材料からなる層に第2基板を結合する工程と、
上記層と第1基板とを除去する工程と、
上記層上に少なくとも一つの電極を形成する工程と、
を少なくとも具備することを特徴とするテラヘルツ波の生成及び/又は検出を行う光伝導アンテナの製造方法に関する。
Claims (16)
- 少なくとも一つの基板(1)と、該基板(1)の前面に少なくとも2つの電極(2)を有する、テラヘルツ波の生成及び/又は検出を行う金属‐金属指組み光伝導アンテナにおいて、
テラヘルツ波を反射する材料からなり、前記基板(1)の内部で当該基板(1)の前面から波長より短い距離下側に延在する層(4)と、
前記基板(1)の前面に指組み構造と、を具備し、
前記指組み構造は、
前記基板(1)の前面に距離Δで等間隔に配置された、前記電極(2)の5nmのCrと150nmのAuからなる第1メタライズ層と、
前記第1メタライズ層上に配置された500nmの厚さのSiO2層(5)と、
距離Δの2倍の周期性を有し前記電極(2)間のギャップを覆う金属フィンガ(6)からなる第2金属層と、を備えることを特徴とする金属‐金属指組み光伝導アンテナ。 - 前記層(4)は、前記基板(1)の前面から距離5~10μm下側に延在することを特徴とする請求項1に記載の金属‐金属指組み光伝導アンテナ。
- 前記層(4)は金属層であることを特徴とする請求項1又は請求項2に記載の金属‐金属指組み光伝導アンテナ。
- 前記層(4)の金属は、金、チタン、銀、銅の中から選ばれる少なくとも一種であることを特徴とする請求項3に記載の金属‐金属指組み光伝導アンテナ。
- 前記基板(1)は、GaAs、InGaAs、AlGaAs、GaAsP、Si、石英、InGaAsP、LT-GaAs、ErAs:GaAs、Fe:InGaAs、InGaAsNの中から選ばれる半導体基板であることを特徴とする請求項1乃至請求項4のいずれか一項に記載の金属‐金属指組み光伝導アンテナ。
- λが放出/検出が必要な最大周波数に対応するとしたとき、前記電極(2)と前記層(4)間の基板層の厚さはd=λ/2であることを特徴とする請求項1乃至請求項5のいずれか一項に記載の金属‐金属指組み光伝導アンテナ。
- 前記電極(2)間の距離Δが最大d/2であることを特徴とする請求項6に記載の金属‐金属指組み光伝導アンテナ。
- 前記電極(2)と前記層(4)間の基板層は、LT-GaAs、ErAs:GaAs、Fe:InGaAs、InGaAsNから選択される材料から形成されることを特徴とする請求項1乃至請求項7のいずれか一項に記載の金属‐金属指組み光伝導アンテナ。
- 前記電極(2)と前記層(4)間の基板層は、一番上が超高速応答を有する2μmの厚さの材料の層であり、その下が300nmのAlGaAs層、続いてその下が3.7μmの厚さのGaAs層である3層から形成され、前記電極(2)間の距離Δは3μm未満であることを特徴とする請求項8に記載の金属‐金属指組み光伝導アンテナ。
- 選択エッチング停止層を形成する層(10)を第1基板(11)に形成する工程と、
前記層(10)上に層(12)を形成する工程と、
前記層(12)上にテラヘルツ波を反射する材料からなる層(13)を形成する工程と、
前記テラヘルツ波を反射する材料からなる層(13)に第2基板(14)を結合する工程と、
前記層(10)と前記第1基板(11)とを除去する工程と、
前記層(12)上に少なくとも一つの電極(15)を形成する工程と、
を少なくとも具備することを特徴とする請求項1に記載の金属‐金属指組み光伝導アンテナの製造方法。 - 前記テラヘルツ波を反射する材料からなる層(13)は、金属蒸発により前記層(12)上に形成されることを特徴とする請求項10に記載の光伝導アンテナの製造方法。
- 前記層(4)は、金、チタン、銀、銅の中から選ばれる少なくとも一種であることを特徴とする請求項10又は請求項11に記載の光伝導アンテナの製造方法。
- 前記第1基板(11)及び第2基板(13)は、GaAs、InGaAs、AlGaAs、GaAsP、Si、石英、InGaAsPの中から選ばれる化合物半導体から得られることを特徴とする請求項10乃至請求項12のいずれか一項に記載の光伝導アンテナの製造方法。
- 前記第1基板(11)に形成された前記層(10)及び前記第1基板(11)は、機械エッチング法及び/又は化学エッチング法により除去されることを特徴とする請求項10乃至請求項13のいずれか一項に記載の光伝導アンテナの製造方法。
- 前記電極(15)は、フォトリソグラフィー及び/又は電子ビームリソグラフィーにより形成されることを特徴とする請求項10乃至請求項14のいずれか一項に記載の光伝導アンテナの製造方法。
- テラヘルツ波を生成する生成部(17)と、そのテラヘルツ波を検出する検出部(18)を具備し、該生成部(17)と検出部(18)のうちの少なくとも一つが請求項1に記載の金属‐金属指組み光伝導アンテナを有することを特徴とするテラヘルツ時間領域分光システム(16)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP14307065.4A EP3035394A1 (en) | 2014-12-17 | 2014-12-17 | Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system |
EP14307065.4 | 2014-12-17 | ||
PCT/IB2015/059592 WO2016097975A1 (en) | 2014-12-17 | 2015-12-14 | Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system |
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JP2018507534A JP2018507534A (ja) | 2018-03-15 |
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EP3546904A1 (en) * | 2018-03-30 | 2019-10-02 | Centre National De La Recherche Scientifique | Generation and detection of terahertz radiation with an arbitrary polarization direction |
CN110187522B (zh) * | 2019-05-24 | 2022-09-09 | 中国计量大学上虞高等研究院有限公司 | 硅基Bi2O2Se结构太赫兹波开关 |
CN110797432A (zh) * | 2019-11-18 | 2020-02-14 | 中国科学院上海技术物理研究所 | 一种室温超短沟道硒化铂太赫兹探测器及制备方法 |
CN112688071A (zh) * | 2020-12-28 | 2021-04-20 | 苏州芯镁信电子科技有限公司 | 一种不含介质层的太赫兹阵列传输天线的制备方法 |
CN114414041B (zh) * | 2021-12-27 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | 具有皮秒量级的可见光和射线脉冲探测方法及固体条纹相机 |
CN114784128B (zh) * | 2022-03-25 | 2024-04-02 | 国科大杭州高等研究院 | 一种基于蝶形天线结构的拓扑增强型碲化锑太赫兹光电探测器及其制备方法 |
WO2023228965A1 (ja) * | 2022-05-25 | 2023-11-30 | ローム株式会社 | テラヘルツ装置 |
EP4411831A1 (en) * | 2023-02-03 | 2024-08-07 | Centre national de la recherche scientifique | Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system |
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JP2013062658A (ja) | 2011-09-13 | 2013-04-04 | Pioneer Electronic Corp | アンテナ素子およびアンテナ素子の製造方法 |
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WO2005017494A2 (en) * | 2003-08-18 | 2005-02-24 | Trustees Of Stevens Institute Of Technology | A frequency selective terahertz radiation detector |
JP5419411B2 (ja) * | 2008-10-08 | 2014-02-19 | キヤノン株式会社 | テラヘルツ波発生素子 |
FR2949905B1 (fr) * | 2009-09-09 | 2012-01-27 | Centre Nat Rech Scient | Photodetecteur, photomelangeur et leur application a la generation de rayonnement terahertz. |
US8558745B2 (en) * | 2010-10-13 | 2013-10-15 | Novatrans Group Sa | Terahertz antenna arrangement |
JP6332980B2 (ja) | 2013-03-08 | 2018-05-30 | キヤノン株式会社 | 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 |
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US10288478B2 (en) | 2019-05-14 |
JP2018507534A (ja) | 2018-03-15 |
EP3235013A1 (en) | 2017-10-25 |
EP3035394A1 (en) | 2016-06-22 |
EP3235013B1 (en) | 2022-05-11 |
US20170322078A1 (en) | 2017-11-09 |
WO2016097975A1 (en) | 2016-06-23 |
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