JP6989171B2 - Wavelength conversion member and its manufacturing method - Google Patents

Description

The present invention relates to a wavelength conversion member used for a backlight or the like.

For example, Patent Document 1 below discloses an invention relating to a quantum dot film and a lighting device using the quantum dot film.

For example, FIG. 6A of Patent Document 1 discloses a lighting device 600 having a QD (quantum dot) phosphor material 604 and barrier layers 620 and 622 arranged on both sides thereof. By providing a barrier layer, the optical stability of the QD can be ensured, and the QD can be protected from temperature rise, humidity, and other harmful environmental conditions (see [0072] of Patent Document 1).

Japanese Unexamined Patent Publication No. 2013-544018

However, in the invention described in Patent Document 1, the relationship between the composition of the barrier layer and the change in emission intensity with time is not particularly mentioned. That is, Patent Document 1 does not regulate the configuration of the barrier layer from the viewpoint of the change in emission intensity with time.

The present invention has been made in view of this point, and an object of the present invention is to provide a wavelength conversion member capable of suppressing a change in emission intensity with time as compared with the conventional case.

The wavelength conversion member in the present invention is a sheet-shaped wavelength conversion member having a quantum dot layer having quantum dots and a film arranged outside the quantum dot layer, and the water vapor permeability (WVTR) of the film. Is WVTR <9 (g / m ² · day), and the quantum dot layer is formed of the quantum dots, a resin in which the quantum dots are dispersed, and a dispersant for improving the dispersibility of the quantum dots. The light scattering agent is contained in the quantum dot layer in an amount of 1 to 10 wt%, the film has at least an organic layer, and the organic layer is placed on the quantum dot layer side. while towards, through an adhesive layer, and the quantum dot layer, characterized in that by solid wear. As a result, the change in emission intensity with time can be effectively suppressed as compared with the conventional case.

Further, in the present invention, it is preferable that the film is formed with at least an organic layer. This makes it easy to handle the film (improved handleability).

Further, in the present invention, it is preferable that the film has a laminated structure and the organic layer is formed on the innermost layer facing the quantum dot layer. This can easily form a quantum dot layer on the film, and can improve the adhesion between the film and the quantum dot layer.

Further, in the present invention, the organic layer is preferably formed of a PET film.

Further, in the method for manufacturing a wavelength conversion member in the present invention, the quantum dot layer includes the quantum dots, a resin in which the quantum dots are dispersed, a dispersant for improving the dispersibility of the quantum dots, and light. The light scattering agent is contained in the quantum dot layer in an amount of 1 to 10 wt% , and both sides of the quantum dot layer containing the quantum dots are subjected to water vapor permeability (WVTR) via an adhesive layer. ) Formed a laminated structure sandwiched between films having at least an organic layer in a range smaller than 9 (g / m ² · day), and at this time, the laminated structure with the organic layer facing the quantum dot layer side. It is characterized in that a structure is formed, the laminated structure is sandwiched between a pair of rolls, and the interface between the quantum dot layer and the film is fixed. As a result, it is possible to manufacture a wavelength conversion member capable of facilitating the manufacturing process and effectively suppressing the change in emission intensity with time as compared with the conventional case.

According to the wavelength conversion member of the present invention, the time-dependent change in emission intensity can be effectively suppressed as compared with the conventional case.

It is a vertical sectional view of the wavelength conversion member which shows the 1st Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 2nd Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 3rd Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 4th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 5th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 6th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 7th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 8th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the 9th Embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the tenth embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the eleventh embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the twelfth embodiment of this invention. It is a vertical sectional view of the wavelength conversion member which shows the thirteenth embodiment of this invention. It is a perspective view of the wavelength conversion member of this embodiment. It is a vertical sectional view of the display device using the wavelength conversion member of this embodiment. It is a vertical sectional view of the display device different from FIG. 15 using the wavelength conversion member of this embodiment. It is a vertical sectional view of the light guide member using the wavelength conversion member of this embodiment. It is a conceptual diagram which shows the manufacturing apparatus for manufacturing the wavelength conversion member of this embodiment. It is a conceptual diagram for demonstrating the manufacturing method of the wavelength conversion member which shows the 8th Embodiment of this invention. It is a conceptual diagram for demonstrating the manufacturing method of the wavelength conversion member which shows the 9th Embodiment of this invention. It is a conceptual diagram for demonstrating the manufacturing method of the wavelength conversion member which shows the tenth embodiment of this invention. It is a schematic diagram of the light emission tester used in the experiment. It is a graph which measured the relationship between the elapsed time and the blue light intensity (450 nm area) for each sample. It is a graph which measured the relationship between the elapsed time and the green light intensity (green area) for each sample. It is a graph which shows the relationship between the elapsed time and the x-coordinate of the CIE system color chart for each sample. It is a graph which shows the relationship between the elapsed time and the y coordinate of the CIE color system for each sample. It is a graph which shows the relationship between the elapsed time and the normalized illuminance for each sample. It is a graph which shows the relationship between the elapsed time and the x-coordinate of the CIE color system for each sample. It is a graph which shows the relationship between the elapsed time and the y coordinate of the CIE color system for each sample. It is a graph which shows the relationship between the elapsed time and the normalized illuminance for each sample. It is a graph which measured the relationship between the elapsed time and the blue light intensity (450 nm area) from the sample 9 to the sample 11. It is a graph which measured the relationship between the elapsed time and the green light intensity (green area) from the sample 9 to the sample 11. It is a graph which measured the relationship between the elapsed time and the red light intensity (red area) from the sample 9 to the sample 11. 6 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system for Samples 9 to 11. 6 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color genealogy for Samples 9 to 11. It is a graph which measured the relationship between the elapsed time and the blue light intensity (450 nm area) from the sample 12 to the sample 14. It is a graph which measured the relationship between the elapsed time and the green light intensity (green area) from a sample 12 to a sample 14. It is a graph which measured the relationship between the elapsed time and the red light intensity (red area) from the sample 12 to the sample 14. 6 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system from sample 12 to sample 14. 6 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color system from sample 12 to sample 14. It is an emission spectrum with respect to sample 9. It is an emission spectrum with respect to a sample 10. It is an emission spectrum with respect to sample 11. It is an emission spectrum with respect to sample 12. It is an emission spectrum with respect to a sample 13. It is an emission spectrum with respect to a sample 14.

Hereinafter, an embodiment of the present invention (hereinafter, abbreviated as “embodiment”) will be described in detail. The present invention is not limited to the following embodiments, and can be variously modified and implemented within the scope of the gist thereof.

FIG. 1 is a vertical cross-sectional view of a wavelength conversion member showing the first embodiment of the present invention. As shown in FIG. 1A, the wavelength conversion member 1 includes a quantum dot layer 2 having quantum dots and barrier layers 3 and 4 formed on both sides of the quantum dot layer 2. As shown in FIG. 14, the wavelength conversion member 1 is, for example, a sheet member formed in a thin plate shape. Generally, a "sheet" has a structure in which its thickness is small for its length and width. The wavelength conversion member 1 may or may not be flexible, but it is preferable that the wavelength conversion member 1 is flexible. The wavelength conversion member 1 may be simply referred to as a sheet, or may be referred to as a film, a film sheet, or the like. However, as used herein, the term "film" is defined as a flexible sheet material. Further, even if the wavelength conversion member 1 is formed to have a constant thickness, the thickness may change depending on the location, may gradually change in the length direction or the width direction, or may change stepwise. good. The length dimension L, the width dimension W, and the thickness dimension T of the wavelength conversion member 1 are not limited, and various dimensions are changed depending on the product. For example, it may be used for the backlight of a large product such as a television, or it may be used for the backlight of a small portable device such as a smartphone, and therefore the size is determined according to the product. become.

The quantum dot layer 2 contains a large number of quantum dots, but may contain a fluorescent pigment, a fluorescent dye, or the like in addition to the quantum dots.

The quantum dot layer 2 is preferably formed of a resin composition in which quantum dots are dispersed. Resins (binders) include polypropylene, polyethylene, polystyrene, AS resin, ABS resin, acrylic resin, methacrylic resin, polyvinyl chloride, polyacetal, polyamide, polycarbonate, modified polyphenylene ether, polybutylene terephthalate, polyethylene terene terephthalate, polysulfon, and poly. Ethersulfon, polyphenylene sulfide, polyamideimide, polymethylpentene, liquid crystal polymer, epoxy resin, phenol resin, urea resin, melamine resin, epoxy resin, diallyl phthalate resin, unsaturated polyester resin, polyimide, polyurethane, silicone resin, styrene-based A thermoplastic elastomer or a mixture of some of these can be used. For example, urethane-acrylic resin, urethane acrylate, styrene-based thermoplastic elastomer and the like can be preferably applied. As the styrene-based thermoplastic elastomer, Kuraray Hybler Co., Ltd. (registered trademark) can be exemplified.

Although the configuration and material of the quantum dots are not limited, for example, the quantum dots in the present embodiment can have a core of semiconductor particles having a diameter of 2 to several tens of nm. In addition to the core of the semiconductor particle, the quantum dot can have a shell portion that covers the periphery of the core. The diameter of the core of the semiconductor particles may be 2 to 20 nm, preferably 2 to 15 nm. The material of the core is not particularly limited. For example, the core includes a core material containing at least Zn and Cd, a core material containing Zn, Cd, Se and S, ZnCuInS, CdS, ZnSe, ZnS, CdSe, InP, CdTe, and some composites thereof. It is possible to use things.

Quantum dots include, for example, quantum dots having fluorescence wavelengths of about 520 nm (green) and about 660 nm (red). Therefore, as shown in FIG. 1, when blue light is incident from the light incident surface 1a, a part of blue is converted into green or red by the quantum dots. As a result, white light can be obtained from the light emitting surface 1b.

The quantum dot layer 2 is formed, for example, by applying a resin composition in which quantum dots are dispersed on the surface of a film-shaped barrier layer, or is formed by preliminarily forming a predetermined shape.

As shown in FIG. 1A, the barrier layers 3 and 4 are arranged on both sides of the quantum dot layer 2, respectively. As shown in FIG. 1B, the barrier layers 3 and 4 can be bonded to both sides of the quantum dot layer 2 via the adhesive layer 7. By providing the barrier layers 3 and 4 in this way, both sides of the quantum dot layer 2 are protected, and environmental resistance (durability) can be improved. Conventionally, a configuration in which barrier layers are arranged on both sides of the quantum dot layer has been considered (Patent Document 1). However, the configuration of the barrier layer is not regulated from the viewpoint of suppressing the time-dependent change in the emission intensity of the wavelength conversion member.

Therefore, in the present embodiment, the water vapor transmission rate of the barrier layers 3 and 4 is set to be lower than ^{9 (g / m 2 · day).} Here, the "water vapor transmission rate" can be measured based on JIS-K7129 (2008). Specifically, the water vapor transmission rate can be measured by using a humidity-sensitive sensor method, an infrared sensor method, or a gas chromatograph method, but the present invention is not limited thereto. In the present embodiment, the water vapor transmission rate of the barrier layers 3 and 4 ^{is preferably 5 (g / m 2} · day) or less, and more preferably 3 (g / m ² · day) or less. It is more preferably 1 (g / m ² · day) or less, further preferably 0.1 (g / m ² · day) or less, and 0.01 (g / m ² · day) or less. Is even more preferable. The water vapor transmission rate is ^{most preferably 6 × 10 -3} (g / m ² · day) or less.

By regulating the water vapor transmission rate of the barrier layers 3 and 4 in this way, it is possible to effectively suppress the change in emission intensity with time as compared with the conventional case. For example, as shown in the experimental results described later, when a quantum dot having a green fluorescence wavelength is used, in a sample using a barrier layer ^{having a water vapor permeability of 9 (g / m 2 · day), with the passage of time.} The emission intensity of the blue (incident light) fluorescence wavelength gradually increased, while the emission intensity of the green fluorescence wavelength sharply decreased. The durability test conditions were a temperature of 60 ° C. and a humidity of 90%.

Since the water vapor transmission rates of the barrier layers 3 and 4 are high, the amount of water vapor reaching the quantum dot layer 2 increases, and the quantum dots contained in the quantum dot layer 2 are likely to deteriorate. Therefore, in the present embodiment, the water vapor transmission rate of the barrier layers 3 and 4 is made smaller than ^{9 (g / m 2 · day) in order to protect the quantum dots from a bad environment or a sudden environmental change.} As a result, deterioration of the quantum dots can be suppressed, and changes in emission intensity over time can be effectively suppressed. In the experiment described later, it was proved that if the water vapor transmission rate of the barrier layers 3 and 4 is 0.1 (g / m ² · day) or less, the change in emission intensity with time can be suppressed more effectively. ing.

In FIG. 1B, the quantum dot layer 2 and the barrier layers 3 and 4 are bonded via the adhesive layer 7, but as shown in FIG. 1C, the adhesive layer 7 is eliminated and both sides of the quantum dot layer 2'are bonded. It is also possible to directly bond the barrier layers 3 and 4.

In the configuration of FIG. 1C, for example, by including the adhesive component in the quantum dot layer 2', the barrier layers 3 and 4 can be bonded to both sides of the quantum dot layer 2'. Thereby, the sheet thickness of the wavelength conversion member 1 can be reduced, and for example, it can be adjusted to 100 μm or less.

Further, as shown in FIG. 1B, even in the configuration in which the adhesive layer 7 is provided, for example, by forming the quantum dot layer 2 by calendar molding, a base material for supporting the quantum dot layer 2 is not required, and the quantum dot layer is not required. The sheet thickness of 2 can be formed thin, specifically, it can be formed to be about 70 μm or less, and the sheet thickness of the wavelength conversion member 1 can be formed thin.

Next, in addition to the water vapor transmission rate of the barrier layers 3 and 4 ^{being smaller than 9 (g / m 2} · day), preferable materials and configurations of the barrier layers 3 and 4 in the present embodiment will be described. In the following embodiments, the presence / absence of the adhesive layer and the state of the quantum dot layer are not limited as in FIGS. 1B and 1C.

In FIG. 2, the barrier layers 3 and 4 are formed of a single layer of the organic layer 5. Since the organic layer 5 constitutes a resin film and the barrier layers 3 and 4 exist as the resin film in this way, the barrier layers 3 and 4 can be easily handled. Further, in FIG. 2, the organic layer 5 and the quantum dot layer 2 are in contact with each other. At this time, the surface of the organic layer 5 is excellent in wettability, and when the quantum dot layer 2 is applied and formed, the quantum dot layer 2 can be easily formed on the surfaces of the barrier layers 3 and 4 with a predetermined thickness. can. Further, the adhesion between the quantum dot layer 2 and the organic layer 5 can be improved by thermocompression bonding or the like. In the present embodiment, the organic layer 5 is preferably a PET (polyethylene terephthalate) film. As a result, it is possible to more effectively improve the above-mentioned handleability (handleability), adhesion to the quantum dot layer 2, and the like while having high light transmission.

Further, in FIG. 3, the barrier layers 3 and 4 are formed by a laminated structure of the organic layer 5 and the inorganic layer 6. At this time, the organic layer 5 is formed on the innermost layer on the side of the barrier layers 3 and 4 in contact with the quantum dot layer 2, and the inorganic layer 6 is formed on the outer side (outermost surface layer) of the innermost layer. The organic layer 5 is preferably a PET (polyethylene terephthalate) film. The inorganic layer 6 is preferably a _{SiO 2 layer.} Further, the inorganic layer 6 may be a layer of silicon nitride (SiN _x ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TIO ₂ ) or silicon oxide (SiO ₂ ), or a laminate thereof. By providing the organic layer 5 in this way, the handling of the barrier layers 3 and 4 can be facilitated. Further, by arranging the organic layer 5 inside the barrier layers 3 and 4, the organic layer 5 and the quantum dot layer 2 can be brought into contact with each other. Therefore, similarly to FIG. 2, the formation of the quantum dot layer 2 can be facilitated at the time of coating formation, and the adhesion between the quantum dot layer 2 and the organic layer 5 can be improved. Further, in FIG. 3, by providing the inorganic layer 6 on the barrier layers 3 and 4, excellent barrier characteristics can be obtained even if the barrier layers 3 and 4 are thin. The barrier characteristics referred to here refer to the water vapor transmission rate and the gas barrier, and in the present embodiment, even if the film thickness of the barrier layers 3 and 4 is reduced to about several tens of μm, the water vapor transmission rate of the barrier layers 3 and 4 is achieved. Can be made lower than 9 (g / m ^{2 · day).} The gas barrier property may be evaluated by the oxygen permeability. In FIG. 3, the barrier layers 3 and 4 have a two-layer structure of one organic layer 5 and one inorganic layer 6, but a plurality of organic layers 5 and a plurality of inorganic layers 6 are alternately laminated. It can be configured (however, the innermost layers of the barrier layers 3 and 4 are preferably the organic layer 5).

Further, in FIG. 4A, the barrier layers 3 and 4 are formed by a laminated structure of a plurality of organic layers 5 and an inorganic layer 6 interposed between the organic layers 5. The organic layer 5 is preferably a PET (polyethylene terephthalate) film. Further, it is preferable that the organic layer 5 contains a diffusing agent. It is also possible to form a diffusion promoting layer between the quantum dot layer 2 and the organic layer 5. Further, the inorganic layer 6 is preferably a _{SiO 2 layer.} Further, the inorganic layer 6 may be a layer of silicon nitride (SiN _x ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TIO ₂ ) or silicon oxide (SiO ₂ ), or a laminate thereof. In FIG. 4A, the barrier layers 3 and 4 each have a three-layer structure of two organic layers 5 and one inorganic layer 6, but may have five or more layers.

In FIG. 4A, both the advantages of the barrier structure shown in FIG. 2 and the advantages of the barrier structure shown in FIG. 3 can be obtained. That is, as shown in FIG. 4A, the innermost layer and the outermost surface layer of the barrier layers 3 and 4 are formed by the organic layer 5. Therefore, the handling of the barrier layers 3 and 4 can be facilitated more effectively, and further, the adhesion between the barrier layers 3 and 4 and the quantum dot layer 2 and the ease of forming the quantum dot layer 2 and the barrier. The barrier characteristics of layers 3 and 4 can be effectively improved.

Instead of FIG. 4A, for example, each of the barrier layers 3 and 4 may have a laminated structure of an inorganic layer 6 / an organic layer 5 / an inorganic layer 6. In this embodiment, since the plurality of inorganic layers 6 are arranged on the barrier layers 3 and 4, the barrier characteristics of the barrier layers 3 and 4 can be further improved.

In the above, the barrier layers 3 and 4 are arranged one by one on each side of the quantum dot layer 2. That is, there is only a difference that the layer structure of each of the barrier layers 3 and 4 is a single layer structure as shown in FIG. 2 and a laminated structure as shown in FIGS. 3 and 4A, and each barrier layer is different. The barrier characteristics represented by the water vapor transmission rates of 3 and 4 are notarized values, for example.

On the other hand, in FIG. 4B, a plurality of barrier layers 3, 4, 7, and 8 are laminated on both sides of the quantum dot layer 2, respectively. Each of the barrier layers 3, 4, 7, and 8 is formed of, for example, the single-layer structure or the laminated structure shown in FIGS. 2, 3, and 4A, and is formed between the barrier layer 3 and the barrier layer 7 and the barrier. The layer 4 and the barrier layer 8 are in a state of being joined by an adhesive or the like. For example, each barrier layer 3, 4, 7, 8 has a laminated structure of an organic layer (for example, PET film) / an inorganic layer (for example, SiO ₂ ), and the inorganic layer is directed toward the inside of the quantum dot layer 2 side. , The organic layer is laminated outward. Therefore, in FIG. 4B, for example, from the lower side to the upper side in the drawing, the barrier layer 8 (organic layer / inorganic layer) / barrier layer 4 (organic layer / inorganic layer) / quantum dot layer 2 / barrier layer 7 (inorganic layer /). The organic layer) / barrier layer 3 (inorganic layer / organic layer) are laminated in this order.

By laminating a plurality of barrier layers 3, 4, 7, 8 in this way, even if low barrier characteristics are used for each barrier layer 3, 4, 7, 8, variation can be reduced and the barrier characteristics can be improved. It can be improved stably.

Further, in the above, the laminated structure of the barrier layers arranged on both sides of the quantum dot layer 2 has a symmetrical structure, but it may be asymmetrical.

Further, in order to improve the light scattering property of the wavelength conversion member 1, the following processing may be performed. That is, in the embodiment shown in FIG. 5, the surfaces of the barrier layers 3 and 4 are matted. For example, the barrier layers 3 and 4 can be formed as an inorganic layer / organic layer / matte layer. As a result, the surfaces 3a and 4a of the barrier layers 3 and 4 have an uneven shape. The matting treatment may be performed on either the surface of the barrier layer 3 or the barrier layer 4. Alternatively, as shown in FIG. 6, the light scattering agent 8 may be contained in the quantum dot layer 2. The material of the light scattering agent 8 is not particularly limited, but _{fine particles such as SiO 2} , BN, and AlN can be presented. As an example, the light scattering agent 8 is contained in an amount of 1 to 10 wt% with respect to the quantum dot layer 2. Further, the light scattering agent 8 may be contained in the barrier layers 3 and 4. At this time, the concentration of the light scattering agent 8 contained in the quantum dot layer 2 and the concentration of the light scattering agent contained in the barrier layers 3 and 4 may be the same or different. The barrier layers 3 and 4 shown in FIGS. 5 and 6 may have any of the configurations shown in FIGS. 2 to 4. Further, the surface of the barrier layer 3 or the barrier layer 4 may be matted, and the quantum dot layer 2 may contain a light scattering agent 8, and the barrier layer 3 or the barrier layer 4 further contains a light scattering agent 8. You may.

Further, in another embodiment shown in FIG. 7, the thickener 9 is contained in the quantum dot layer 2. The material of the thickener 9 is not particularly limited, and examples thereof include carboxyvinyl polymers, carboxylmethylcellulose, acrylate-methyl ester copolymers, bentonite (aluminum silicate), and hectorite (magnesium silicate) -based additives. By including the thickener 9, the resin composition constituting the quantum dot layer 2 can be adjusted to an appropriate viscosity, and the quantum dot layer 2 can be easily formed into a predetermined thickness and a predetermined shape.

In FIGS. 6 and 7, the barrier layers 3 and 4 may be matted in the same manner as in FIG.

Further, in the present embodiment, it is preferable that a dispersant is contained in order to improve the dispersibility of the quantum dots contained in the quantum dot layer 2. The material of the dispersant is not particularly limited, but is epoxy resin-based, polyurethane-based, polycarboxylate-based, formalin-condensed polymer-based naphthalene sulfonate, polyethylene glycol-based, and partially alkyl ester-based compound-based polycarboxylic acid. , Polyether-based, polyalkylene polyamine, alkyl sulfonate-based, quaternary ammonium salt-based, higher alcohol alkylene oxide-based, polyhydric alcohol ester-based, alkyl polyamine-based, or polyphosphate-based dispersant. Specifically, DISPERBYK (registered trademark) manufactured by Big Chemie Japan Co., Ltd. can be exemplified.

As shown in Table 1 below, it was found that when quantum dots were mixed and dispersed in a liquid resin, the viscosity decreased. The shear rate at the time of viscosity measurement was set to 15 / s to 500 / s. The unit of viscosity shown in the table is (mPa · sec).

Therefore, in order to keep the viscosity of the resin within a predetermined range so that the quantum dot layer 2 can be easily formed, it is preferable to adjust the viscosity by adding the above-mentioned thickener. The viscosity values shown in Table 1 are merely examples, and can be appropriately adjusted to the required viscosity.

In the embodiment shown in FIGS. 1 to 7, barrier layers are arranged at least on both the upper and lower sides of the quantum dot layer 2, and both sides of the quantum dot layer 2 (the left and right sides in the drawing with respect to the quantum dot layer 2) are arranged. Not specified. On the other hand, in the configuration described below, the barrier layer is formed on the entire circumference of the quantum dot layer 2. FIG. 8 is a vertical cross-sectional view of the wavelength conversion member showing the eighth embodiment of the present invention. By covering the entire circumference of the quantum dot layer 2 with the barrier layer 81, the entire circumference of the quantum dot layer 2 is protected, which is more durable than protecting only the upper and lower sides of the quantum dot layer 2 as shown in FIG. Can be improved. As a result, deterioration of the quantum dot layer 2 can be appropriately suppressed. As shown in FIG. 8, on the upper surface 80 of the quantum dot layer 2, the winding start end 82 and the winding end 83 of the barrier layer 81 are overlapped with each other. As a matter of course, the position where the winding start end 82 and the winding end 83 are overlapped may be any of the upper surface 80, the lower surface, the right side surface, and the left side surface of the quantum dot layer 2. In the region where the winding start end 82 and the winding end 83 are overlapped, for example, the winding start end 82 and the winding end 83 are joined by thermocompression bonding and adhesion. In the configuration shown in FIG. 8, since the winding start end 82 and the winding end 83 are overlapped at positions facing one surface of the quantum dot layer 2, the barrier layer 81 can be used without waste.

The overall shape of the wavelength conversion member 60 shown in FIG. 8 is not particularly limited, and may be stick-shaped, block-shaped, chip-shaped, or the like, or the length of the quantum dot layer 2 shown in FIG. 8 in the horizontal direction shown in the drawing. The dimensions may be extended into a sheet shape.

FIG. 9 is a vertical sectional view of a wavelength conversion member showing a ninth embodiment of the present invention. In FIG. 9, the barrier layer 81 covers the entire circumference of the quantum dot layer 2, and is wound with the winding start end 82 of the barrier layer 81 on the same side of the quantum dot layer 2 (on the right side in the drawing with respect to the quantum dot layer 2). The terminal 83 is joined by thermocompression bonding or the like. In this way, the winding start end 82 and the winding end 83 of the barrier layer 81 are joined on the same side of the quantum dot layer 2, so that the joining of the winding start end 82 and the winding end 83 can be made quantum. This can be done in a region that does not affect the dot layer 2. For example, when the winding start end 82 and the winding end 83 are thermocompression-bonded, the quantum dot layer 2 can be prevented from being heated, and the thermal influence on the quantum dot layer 2 can be suppressed. The winding start end 82 and the winding end 83 may be joined by adhesion.

FIG. 10 is a vertical sectional view of a wavelength conversion member showing a tenth embodiment of the present invention. In FIG. 10, the quantum dot layer 2 is provided on the lower barrier layer 85, and the upper barrier layer 86 is provided so as to cover the lower barrier layer 85 and the quantum dot layer 2. Then, the barrier layers 85 and 86 arranged on the upper and lower sides of the quantum dot layer 2 are bonded to each other on both sides of the quantum dot layer 2 (right side and left side in the drawing with respect to the quantum dot layer 2) by adhesion, thermocompression bonding, or the like. In this way, since the barrier layers 85 and 86 are joined on both sides of the quantum dot layer 2, the influence of the joining step on the quantum dot layer 2 can be suppressed. Further, in the configuration of FIG. 10, unlike FIGS. 8 and 9, the barrier layers 85 and 86 are divided into two, and the quantum dot layer 2 is sandwiched between the barrier layers 85 and 86. It is not necessary to wind the entire circumference of the quantum dot layer 2 with the barrier layer 81 as in the configuration shown in FIG. Therefore, the wavelength conversion member 60 having the barrier layer formed on the entire circumference of the quantum dot layer 2 can be easily manufactured, and the configuration shown in FIG. 10 is suitable for mass production of the wavelength conversion member 60.

In FIGS. 1 to 10, for example, the quantum dot layer 2 is formed of a molded body. That is, the quantum dot layer 2 is formed by, for example, injection molding, and the barrier layer is arranged with respect to the quantum dot layer 2 as a molded body. By forming the quantum dot layer 2 with a molded body, wavelength conversion members having various shapes can be easily and appropriately formed. In the present embodiment, the quantum dot layer 2 is not limited to the structure formed by the molded body, and may be formed by coating. In the case of coating, a barrier layer is prepared in advance, and the quantum dot layer 2 is formed on the surface of the barrier layer by coating. Examples of the coating method include an inkjet method and a dispenser method, but the inkjet method is particularly preferable.

In FIGS. 11 to 13, the quantum dot layer 62 is formed by an inkjet method. In the wavelength conversion member 61 shown in FIG. 11, the quantum dot layer 62 is formed by an inkjet method, and the structure of the barrier layer 81 with respect to the quantum dot layer 62 is the same as that in FIG. Further, in the wavelength conversion member 61 shown in FIG. 12, the quantum dot layer 62 is formed by an inkjet method, and the configuration of the barrier layer 81 with respect to the quantum dot layer 62 is the same as that in FIG. Further, in the wavelength conversion member 61 shown in FIG. 13, the quantum dot layer 62 is formed by an inkjet method, and the configuration of the barrier layer 81 with respect to the quantum dot layer 62 is the same as that in FIG.

By manufacturing the quantum dot layer 62 by the inkjet method, the film thickness of the quantum dot layer 62 can be formed very thin. As a result, as shown in FIGS. 11 to 13, the surface 61a of the wavelength conversion member 61 can be flattened.

The wavelength conversion members 1, 60, and 61 of the present embodiment can be incorporated into, for example, the backlight device 55 shown in FIG. 15 to 17 illustrate the case of the wavelength conversion member 1. In FIG. 15, the backlight device 55 includes a plurality of light emitting elements 20 (LEDs) and a wavelength conversion member 1 of the present embodiment facing the light emitting elements 20. As shown in FIG. 15, each light emitting element 20 is supported on the surface of the support 52. In FIG. 15, the backlight device 55 is arranged on the back surface side of the display unit 54 such as a liquid crystal display to form the display device 50.

Although not shown in FIG. 15, a diffuser plate for diffusing light, another sheet, or the like may be interposed between the light emitting element 20 and the display unit 54 in addition to the wavelength conversion member 1.

When the wavelength conversion member 1 is formed in a sheet shape as shown in FIG. 14, one sheet-shaped wavelength conversion member 1 is arranged between the light emitting element 20 and the display unit 54 as shown in FIG. However, for example, a plurality of wavelength conversion members 1 may be joined together so as to have a predetermined size. Hereinafter, a configuration in which a plurality of wavelength conversion members 1 are connected by tiling is referred to as a composite wavelength conversion member.

Here, the composite wavelength conversion member is arranged in place of the wavelength conversion member 1 of the display device 50 of FIG. 15, and the diffuser plate is arranged between the light emitting element 20 and the composite wavelength conversion member, that is, the light emitting element 20 / diffusion. The configuration of the plate / composite wavelength conversion member / display unit 54 will be considered. In such a configuration, the light radiated from the light emitting element 20 and diffused by the diffuser plate is incident on the composite wavelength conversion member. Since the light diffused by the diffuser plate is incident on the composite wavelength conversion member, the intensity distribution of the light depending on the distance from the light emitting element 20 is suppressed. Further, since the distance between the light emitting element 20 and the composite wavelength conversion member is longer than that in the case without the diffuser plate, the influence of the heat generated by the light emitting element 20 on the quantum dots contained in the composite sheet is reduced.

On the other hand, as shown in FIG. 16, the light emitting element 20 / the composite wavelength conversion member 21 / the diffusion plate 22 / the display unit 54 can be arranged in this order. According to this, even if unevenness of emission color occurs at the joint of each wavelength conversion member 1 due to diffused reflection or deterioration of quantum dots due to water vapor entering from the joint, the display unit 54 displays the display. It is possible to appropriately suppress the occurrence of color unevenness. That is, since the light emitted from the composite wavelength conversion member 21 is diffused by the diffuser plate 22 and then incident on the display unit 54, color unevenness in the display of the display unit 54 can be suppressed.

When the composite wavelength conversion member 21 is used, regardless of the application to the display device shown in FIG. 16, for example, when the composite wavelength conversion member 21 is used for lighting or the like, the light emission surface side of the composite wavelength conversion member 21 is used. It is preferable to arrange and use a diffuser plate.

Alternatively, as shown in FIG. 17, the wavelength conversion member 1 of the present embodiment is provided on the surface of the light guide plate 40 and at least one between the light guide plate 40 and the light emitting element 20 to form the light guide member. May be. As shown in FIG. 17, a light emitting element 20 (LED) is arranged on the side surface of the light guide plate 40. The use of the wavelength conversion member 1 of the present embodiment is not limited to FIGS. 15, 16 and 17.

In the present embodiment, the time-dependent change in the emission intensity of the wavelength conversion member 1 can be effectively suppressed as compared with the conventional case. Therefore, the wavelength conversion characteristics when the wavelength conversion member 1 of the present embodiment is used as the backlight device 55, the light guide member, or the like can be stabilized, and the life of the backlight device 55 or the light guide member can be extended. Can be planned.

Further, the wavelength conversion member 1 of the present embodiment can be made flexible. Therefore, the wavelength conversion member 1 can be appropriately installed on a curved surface or the like.

In addition to the backlight device and the light guide member described above, the wavelength conversion member 1 of the present embodiment can be applied to a lighting device, a light source device, a light diffusing device, a light reflecting device, and the like.

Further, in FIGS. 15, 16 and 17, it is also possible to use the wavelength conversion member 61 in which the quantum dot layer 62 shown in FIGS. 11 to 13 is formed by an inkjet method. The wavelength conversion members 1, 60, and 61 shown in FIGS. 1 to 13 may be arranged inside the glass capillary.

FIG. 18 is a conceptual diagram showing a manufacturing apparatus for manufacturing the wavelength conversion member of the present embodiment. As shown in FIG. 18, the first raw fabric roll 30 that feeds out the resin film 10 that becomes the barrier layer 3, the second raw fabric roll 31 that sends out the resin film 11 that becomes the barrier layer 4, and the take-up roll 32. , A pressure contact portion 35 composed of a pair of nip rolls 33 and 34, a coating means 36, and a heating portion 38.

As shown in FIG. 18, a ^{resin film 10 having a water vapor transmission rate of less than 9 (g / m 2} · day) is sent out from the first raw fabric roll 30, and a coating means 36 is used on the surface of the resin film 10. , The resin composition 37 containing the quantum dots is applied. Examples of the coating method of the resin composition 37 include a coating method using a known coating coater or impregnation coating coater. For example, a gravure coater, a dip coater, a comma knife coater, and the like can be exemplified. Further, the resin composition 37 can also be applied by an inkjet method.

As shown in FIG. 18, the resin film 10 on which the resin composition 37 is applied is heated by the heating unit 38 in which a heater or the like is installed. As a result, the solvent contained in the resin composition 37 evaporates, and at this point, the quantum dot layer 2 is solidified to some extent.

Subsequently, as shown in FIG. 18, a ^{resin film 11 having a water vapor permeability of less than 9 (g / m 2} · day) sent out from the second raw fabric roll 31 was applied to the exposed surface of the quantum dot layer 2. The laminated structure of the resin film 11 / quantum dot layer 2 / resin film 10 is pressure-welded in the nip rolls 33 and 34 that are abutted and form the pressure-welding portion 35. At this time, the interface between the quantum dot layer 2 and the resin films 10 and 11 is fixed by thermocompression bonding at the pressure contact portion 35.

Then, the sheet member 39 composed of the resin film 11 / quantum dot layer 2 / resin film 10 is wound by the take-up roll 32. By cutting the wound sheet member 39 to a predetermined size, the sheet-shaped wavelength conversion member 1 can be obtained.

In the above-mentioned manufacturing method, the quantum dot layer 2 is coated and formed on the resin film 10, and the thickness of the quantum dot layer 2 can be formed to be approximately 10 to 500 μm. Further, the thicknesses of the resin films 10 and 11 are approximately several tens to 1000 μm, and therefore the thickness of the wavelength conversion member 1 is about 50 to 2500 μm. However, the thickness of the quantum dot layer 2 and the thickness of the wavelength conversion member 1 are not limited.

The resin films 10 and 11 described with reference to FIG. 18 have a single layer of the organic layer 5 shown in FIG. 2 or a laminated structure of the organic layer 5 and the inorganic layer 6 shown in FIGS. 3 and 4. Preferably, as shown in FIG. 4A, the inorganic layer 6 is interposed between the plurality of organic layers 5. Specifically, the resin films 10 and 11 preferably have a laminated structure of _{PET film / SiO 2 layer / PET film.}

Alternatively, it is also possible to send out a stack of a plurality of resin films and arrange them on both sides of the quantum dot layer, and as shown in FIG. 4B, a configuration in which a plurality of barrier layers are laminated on both sides of the quantum dot layer is also possible. be.

Further, the mat treatment shown in FIG. 5 is performed on one surface or both surfaces of the sheet member 39 wound on the take-up roll 32 shown in FIG. 18, or the sheet member 39 is cut to a predetermined size. This is performed on both surfaces of the wavelength conversion member 1 of FIG.

The mat treatment can be realized by a method of sandblasting the sheet surface, a method of coating the sheet surface with a mat layer, or the like, but the method is not particularly limited. Further, as shown in FIG. 6, the light scattering agent 8 can be included in the resin composition 37 coated by the coating means 36 shown in FIG. 18 so that the light scattering agent 8 is contained in the quantum dot layer 2. Further, by including the thickener 9 in the resin composition 37 coated by the coating means 36 shown in FIG. 18, the viscosity of the resin composition 37 can be appropriately adjusted. The viscosity is not limited, but can be adjusted to, for example, several hundred to several thousand (mPa · sec). By appropriately adjusting the viscosity of the resin composition 37 and optimizing the fluidity of the resin composition 37, it is possible to form the quantum dot layer 2 having an overall uniform thickness on the surface of the resin film 10. Become.

In the manufacturing process shown in FIG. 18, the quantum dot layer 2 was formed by applying the quantum dot layer 2 to the surface of the resin film 10, but the quantum dot layer 2 was molded in advance and the resin films 10 and 11 were formed on both sides of the molded body of the quantum dot layer 2. Can also be pasted together. The quantum dot layer 2 may be manufactured by a method such as injection molding, extrusion molding, hollow molding, thermoforming, compression molding, calender molding, inflation method, casting method or the like. The thickness of the molded body of the quantum dot layer 2 can be about 10 to 500 μm. For example, the thickness of the molded body of the quantum dot layer 2 can be formed to be about 300 μm. Then, the resin films 10 and 11 can be bonded to both sides of the molded body of the quantum dot layer 2 by thermocompression bonding or the like. An adhesive layer may be provided between the quantum dot layer 2 and the resin films 10 and 11.

As a method of forming the wavelength conversion member 1 into a film, there are a method of performing with a coating machine and a method of performing with a molding machine, and a curing method with a coating machine includes ultraviolet curing and thermosetting.

^{In the present embodiment, the resin films 10 and 11 having a water vapor transmission rate of less than 9 (g / m 2} · day) can be appropriately and easily arranged on both sides of the quantum dot layer 2. This makes it possible to easily manufacture the wavelength conversion member 1 capable of effectively suppressing the change in emission intensity with time as compared with the conventional case.

Next, a method of manufacturing the wavelength conversion member of FIG. 8 will be described with reference to FIG. FIG. 19 is a conceptual diagram for explaining a method for manufacturing a wavelength conversion member showing the eighth embodiment of the present invention. As shown in the left figure of FIG. 19, for example, the quantum dot layer 2 is formed of a molded body. Next, in the central view of FIG. 19, the barrier layer 81 is arranged over the entire circumference of the quantum dot layer 2, and as shown in the right figure of FIG. 19, the winding start end 82 and the winding end 83 are one surface of the quantum dot layer 2 ( In FIG. 19, the winding start end 82 and the winding end 83 are thermocompression-bonded using the thermocompression-bonding member 90 while being overlapped on the upper surface 80). Thermocompression bonding can be performed, for example, by crimping the winding start end 82 and the winding end 83 with a press or a roller while heating. Alternatively, the winding start end 82 and the winding end 83 can be joined by using an adhesive instead of thermocompression bonding. By the manufacturing method shown in FIG. 19, the entire circumference of the quantum dot layer 2 can be easily and appropriately covered with the barrier layer 81.

Further, a method of manufacturing the wavelength conversion member of FIG. 9 will be described with reference to FIG. FIG. 20 is a conceptual diagram for explaining a method for manufacturing a wavelength conversion member showing the ninth embodiment of the present invention. As shown in the left figure of FIG. 20, for example, the quantum dot layer 2 is formed of a molded body. Next, in the central view of FIG. 20, with the winding start end 82 of the barrier layer 81 positioned beside the quantum dot layer 2, the barrier layer 81 is wound around the quantum dots 2 and as shown in the right figure of FIG. The winding end 83 is overlapped with the winding start end 82 and the quantum dot layer 2 on the same side. Then, the winding start end 82 and the winding end 83 are thermocompression bonded using the thermocompression bonding member 90. As shown in FIG. 20, by superimposing the winding start end 82 and the winding end 83 of the barrier layer 81 on the same side of the quantum dot layer 2, the winding start end 82 and the winding end 83 are thermocompression bonded or the like. It is possible to reduce the influence (thermal influence, etc.) on the quantum dot layer 2 at the time of joining. Therefore, deterioration of the quantum dot layer 2 in the process of forming the barrier layer 81 can be suppressed. The winding start end 82 and the winding end 83 may be joined by adhesion.

Further, a method of manufacturing the wavelength conversion member of FIG. 10 will be described with reference to FIG. 21. FIG. 21 is a conceptual diagram for explaining a method of manufacturing a wavelength conversion member showing the tenth embodiment of the present invention. First, in the step shown in FIG. 21A, a plurality of quantum dot layers 2 are arranged on the surface of the barrier layer 85 at intervals. For example, the quantum dot layer 2 is a molded body, and a plurality of preformed quantum dot layers 2 are arranged on the surface of the barrier layer 85. At this time, it is preferable to bond and fix the quantum dot layer 2 and the barrier layer 85.

Subsequently, in the step of FIG. 21B, the barrier layer 86 is arranged from the surface of the barrier layer 85 to the surface of each quantum dot layer 2. At this time, an adhesive layer is applied to the inner surface side of the barrier layer 86 (the side facing the barrier layer 85 and the quantum dot layer 2), and the barrier layer 85 and the barrier layer 86 are bonded to each other via the quantum dots 2. Is preferable. Alternatively, the barrier layer 85 and the barrier layer 86 can be bonded by thermocompression bonding. Then, as shown by the alternate long and short dash line in FIG. 21B, the bonded barrier layers 85 and 86 are cut between the quantum dot layers 2 adjacent to each other, and each quantum dot layer 2 is divided. Thereby, a plurality of wavelength conversion members 60 can be obtained at the same time.

According to the manufacturing method of the wavelength conversion member 60 shown in FIG. 21, the barrier layer can be arranged on the entire circumference of the quantum dot layer 2 by superimposing the barrier layers 85 and 86, so that the barrier can be arranged on the entire circumference of the quantum dot layer 2. The wavelength conversion member 60 on which the layer is formed can be easily and appropriately manufactured, and moreover, it is suitable for mass production of the wavelength conversion member 60.

By using the manufacturing methods shown in FIGS. 19 to 21, the entire circumference of the quantum dot layer 2 can be covered with the barrier layer, and the entire circumference of the quantum dot layer 2 can be appropriately protected by the barrier layer, which is more effective. It is possible to improve the durability. Thereby, the deterioration of the quantum dot layer 2 can be suppressed more appropriately.

The quantum dot layer 2 shown in FIGS. 19 to 21 is, for example, a molded body, but as shown in FIGS. 11 to 13, the quantum dot layer 2 may be formed by an inkjet method. In the case of the inkjet method, the resin composition in which the quantum dots are dispersed is ejected onto the barrier layer by the inkjet method. The discharged resin composition is preferably heated for stabilization. The temperature at the time of heating is preferably 30 to 80 ° C, more preferably 30 to 50 ° C.

In the present embodiment, the resin films 10 and 11 (barrier layer) have an organic layer, and it is preferable that the quantum dot layer 2 and the organic layer are brought into contact with each other in the manufacturing process. As a result, the quantum dot layer 2 can be formed on the surface of the organic layer having high wettability, the formation of the quantum dot layer 2 can be facilitated, and the affinity between the barrier layer and the quantum dot layer 2 improves the adhesion. Can be made to.

Further, by forming the resin films 10 and 11 into a laminated structure of a plurality of organic layers and an inorganic layer interposed between the organic layers, the organic layers can be arranged on both surfaces of the resin films 10 and 11. .. As a result, the handleability can be improved, the quantum dot layer 2 can be easily formed on the surfaces of the resin films 10 and 11, and further, by including the inorganic layer, the barrier characteristics of the resin films 10 and 11 (barrier layer) can be improved. Can be effectively improved.

Alternatively, the resin films 10 and 11 may have a laminated structure of a plurality of inorganic layers and an organic layer interposed between the inorganic layers. Further, a plurality of resin films can be stacked and arranged. At this time, the resin films 10 and 11 can be joined by bonding them with an adhesive or thermocompression bonding them.

Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples carried out to clarify the effects of the present invention. The present invention is not limited to the following examples.

In Samples 1 to 8 in the examples, QD ink (resin composition) in which an elastomer is dissolved in organosilane and quantum dots having a fluorescence wavelength of about 520 nm (green) (sometimes referred to as “green quantum dots”) are dispersed. ) Was obtained. As the elastomer, Kuraray Hybler Corporation (registered trademark) 7311 was used.

Then, a laminated body of glass / QD ink / barrier layer was obtained. The heat treatment was performed to evaporate the solvent of the QD ink to form a quantum dot layer. At this time, the following configuration was used for the barrier layer.

[Sample 1]
A barrier layer having a three-layer structure of PET film / SiO _2- layer / PET film and having a water vapor transmission rate of 6 × 10 ^-3 (g / m ^{2 · day).} The thickness of the barrier layer is 49 μm.

[Sample 2]
A barrier layer having a three-layer structure of PET film / SiO _2- layer / PET film and having a water vapor transmission rate of 9 (g / m ^{2 · day).} The thickness of the barrier layer is 50 μm.

[Sample 3]
Cycloolefin-based film.

A durability test was conducted on the laminate using the barrier layers of Samples 1 to 3 above under the conditions of a temperature of 60 ° C. and a humidity of 90%. The emission intensity was measured by a total luminous flux measurement system manufactured by Otsuka Electronics Co., Ltd. when each sample was emitted with blue (wavelength: 450 nm) LED excitation light.

FIG. 23 is a graph in which the relationship between the elapsed time and the blue light intensity (450 nm area) was measured for each sample. Here, the blue light intensity is the area of the emission peak measured at a wavelength of 450 nm.

As shown in FIG. 23, in Samples 2 and 3, it was found that the blue light intensity (450 nm area) gradually increased with the passage of time. That is, it was found that the blue light intensity of Sample 2 and Sample 3 increased with the passage of time. On the other hand, in Sample 1, it was found that the blue light intensity (450 nm area) was constant and the blue light intensity did not change over time. Further, in Sample 1, the blue light intensity after 150 hours with respect to the blue light intensity in the initial state (time = 0h) is 0.0070 (150h) with respect to 0.0075 (time = 0h), and the blue light intensity is It was found that there was almost no change and the change in blue light intensity was within 10%. Here, the change in blue light intensity is indicated by [(blue light intensity in the initial state − blue light intensity after 150 hours) / blue light intensity in the initial state] × 100 (%) (absolute value).

FIG. 24 is a graph obtained by measuring the relationship between the elapsed time and the green light intensity (green area) for each sample. Here, the green light intensity is the area of the emission peak measured at a wavelength of 520 nm. As shown in FIG. 24, in Samples 2 and 3, it was found that the green light intensity (green area) gradually decreased with the passage of time. As in Samples 2 and 3, the increase in blue light intensity and the decrease in green light intensity mean that the green quantum dots have deteriorated over time. On the other hand, in Sample 1, it was found that the blue light intensity (450 nm area) did not change and the decrease in green light intensity (green area) could be reduced as compared with Samples 2 and 3. Further, in sample 1, the change in green light intensity after 150 hours with respect to the green light intensity in the initial state (time = 0h) was 0.0039 (150h) with respect to 0.0078 (time = 0h), and sample 2 was used. It was found that the change in green light intensity was within 50%, which was smaller than that in Sample 3. Here, the change in green light intensity is indicated by [(green light intensity in the initial state − green light intensity after 150 hours) / green light intensity in the initial state] × 100 (%) (absolute value).

From the measurement results shown in FIGS. 23 and 24, it was found that by using the barrier layer of Sample 1, the deterioration of the quantum dots can be appropriately suppressed, and as a result, the change in emission intensity with time can be effectively suppressed. Based on the measurement results shown in FIGS. 23 and 24, the water vapor transmission rate of the barrier layer was set to a value lower than ^{9 (g / m 2 · day).} Further, it is considered that the most preferable range ^{is 6 × 10 -3} (g / m ² · day) or less, which is the water vapor transmission rate of the barrier layer of the sample 1.

Subsequently, the barrier film was evaluated. In this evaluation, the above sample 1 as a barrier layer, sample 5 having a water vapor transmission rate of 1.6 × ^10-2 (g / m ² · day), and sample 5 having a water vapor transmission rate of 8.4 × 10 ^-3 (g). / ^m 2 · day) of the sample 6 was used for. The light transmittance (%) was 86.8 (total light rays) for sample 1, 92.5 (wavelength 450 nm) for sample 5, and 90.6 (wavelength 450 nm) for sample 6.

FIG. 25 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system for each sample. Sample 4 shows a sample without a barrier layer (a molded body of a quantum dot layer).

In the evaluation, both sides of the quantum dot layer were sandwiched between the barrier films of the above samples, and a light emitting element (LED) was installed on one of the barrier film sides via a diffusion plate. Then, it was measured with a spectroscope from the other barrier film side.

FIG. 22 is a schematic diagram of the light emission tester used in the experiment. A part of the luminescence tester is shown in vertical cross section. As shown in FIG. 22, in the light emitting tester 56, the light emitting element 20 (LED) and the sample S are arranged at positions facing the light emitting element 20. For each sample in the experiment, the quantum dot layer was sandwiched between the above barrier films, and the end faces were made into a sheet to which, for example, epoxy bond treatment and aluminum tape were attached. The light emitting element 20 is supported on the surface of the support 52, and a diffusion plate 22 is interposed between the light emitting element 20 and the sample S. The four sides of the light emitting element 20 were surrounded by a cylindrical reflective sheet 23, and the diffuser plate 22 was arranged on the upper surface of the reflective sheet 23. The light emitted from the light emitting element 20 is diffused by the diffuser plate 22 and incident on the sample S. The reflective sheet 23 has a box shape having an opening of, for example, 3 cm square, and the height of the reflective sheet 23 (distance from the support 52 to the diffuser plate 22) is, for example, 4 cm. Then, the light emitted from the light emitting element 20 was incident on the sample S via the diffuser plate 22, and the light emitted from the upper surface of the sample S was measured by the total luminous flux measurement system. The experiment was carried out under the conditions of a temperature of 60 ° C. and a humidity of 90%. By using the light emitting tester 56 shown in FIG. 22, the light emitting intensity of the light emitting element 20 via the sample S can be accurately measured.

As shown in FIG. 25, in Samples 1, 5 and 6, except for Sample 4 without a barrier, no change was observed in the x-coordinate with the passage of time. In Samples 1 and 5, the variation in the x-coordinate after 200 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.210 (200h) with respect to 0.208 (time = 0h), and x. It was found that the coordinate change was within 1%. In sample 6, the change in the x-coordinate after 200 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.213 (200h) with respect to 0.210 (time = 0h), and the x-coordinate change is 2. It turned out to be within%. Here, the x-coordinate change is indicated by [(x-coordinate strength in the initial state-x-coordinate strength after 200 hours) / x-coordinate strength in the initial state] × 100 (%) (absolute value).

FIG. 26 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color system for each sample. As shown in FIG. 26, in Samples 1, 5 and 6, except for Sample 4 without a barrier, no change was observed in the y-coordinate with the passage of time. In Samples 1 and 5, the variation in the y-coordinate after 200 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.190 (200h) with respect to 0.170 (time = 0h), and y. It was found that the coordinate change was within 15%. In sample 6, the change in the y-coordinate after 200 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.195 (200h) with respect to 0.170 (time = 0h), and the y-coordinate change is 15. It turned out to be within%. Here, the y-coordinate change is indicated by [(y-coordinate strength in the initial state − y-coordinate strength after 200 hours) / y-coordinate strength in the initial state] × 100 (%) (absolute value).

FIG. 27 is a graph showing the relationship between the elapsed time and the normalized illuminance for each sample. As shown in FIG. 27, in Samples 1, 5 and 6, except for Sample 4 without a barrier, no decrease in normalized illuminance with the passage of time was observed. In this result, the fluctuation was within ± 30% in 200 hours.

Next, as sample 7, ^{a barrier layer having a water vapor transmission rate of 10-2} (g / m ² · day) was used, and as sample 8, a barrier layer having a water vapor transmission rate of 10 ^-1 (g / m ² · day) was used. Was used. The water vapor transmission rate of these barrier layers is notarized. Then, the sheet described in the explanation section with respect to FIG. 22 was formed, and the change with time of the spectrum was measured by the light emission tester of FIG. 22.

FIG. 28 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system for each sample. In the experiment, in addition to Sample 7 and Sample 8, Sample 1 and Sample 2 described above were also used.

As shown in FIG. 28, in the sample 2 having a barrier layer having a water vapor transmission rate of 9 (g / m ² · day), the x-coordinate fluctuated immediately after the start of the experiment. Samples 1, 7, and 8 having a barrier layer with a water vapor transmission rate of 10 ^-1 (g / m ² · day) or less show no change in the x-coordinate with the passage of time, or the change is very large. It was small. In Samples 1 and 8, the variation in the x-coordinate after 1100 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.225 (1100h) with respect to 0.220 (time = 0h), and x. It was found that the coordinate change was within 5%. In sample 7, the change in the x-coordinate after 1100 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.219 (1100h) with respect to 0.219 (time = 0h), and the x-coordinate change is 0. It turned out to be%. Here, the x-coordinate change is indicated by [(x-coordinate strength in the initial state-1 x-coordinate strength after 100 hours) / x-coordinate strength in the initial state] × 100 (%) (absolute value).

FIG. 29 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color system for each sample. As shown in FIG. 29, in Samples 1, 7 and 8, the y-coordinate fluctuates with the passage of time, except for Sample 2 having a barrier layer having a water vapor transmission rate of 9 (g / m ^{2 · day).} No, or the fluctuation was very small. In Samples 1 and 8, the variation in the y-coordinate after 1100 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.210 (1100h) with respect to 0.190 (time = 0h), and y. It was found that the coordinate change was within 15%. In sample 7, the change in the y-coordinate after 1100 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.195 (1100h) with respect to 0.160 (time = 0h), and the y-coordinate change is 25. It turned out to be within%. Here, the y-coordinate change is indicated by [(y-coordinate strength in the initial state-1100 hours later y-coordinate strength) / y-coordinate strength in the initial state] × 100 (%) (absolute value).

FIG. 30 is a graph showing the relationship between the elapsed time and the normalized illuminance for each sample. As shown in FIG. 30, in Samples 1, 7 and 8, except for Sample 2 having a barrier layer having a water vapor transmission rate of 9 (g / m ^{2 · day), a decrease in normalized illuminance with the passage of time is observed.} It was not possible or the fluctuation was very small. In this result, the fluctuation was within ± 30% in 200 hours.

From the above experiment, it was found that the barrier layer having a water vapor transmission rate of ^{more than about 0.1 (g / m 2} · day) can sufficiently improve the durability. Based on the above, it is preferable to set the water vapor transmission rate of the barrier layer to 0.1 (g / m ² · day) or less.

Next, an experiment was conducted by forming a barrier layer all around the quantum dot layer. In Samples 9 to 14, an elastomer is dissolved in organosilane, and quantum dots having a fluorescence wavelength of about 520 nm (green) and quantum dots having a fluorescence wavelength of about 650 nm (red) (sometimes referred to as “red quantum dots”). A QD ink (resin composition) in which the above was dispersed was used. As the elastomer, Kuraray Hybler Corporation (registered trademark) 7311 was used. A heat treatment was applied to evaporate the solvent of the QD ink to form a quantum dot layer. The quantum dot layers used in the experiment were prepared with high concentration and low concentration. Further, as the barrier layer, a sheet member having a SiO2 layer formed on a PET film was used, and a material having a water vapor transmission rate of about 10 ^-3 (g / m ² · day) was used. The configuration of the sample (wavelength conversion member) used in the experiment was as follows.

[Sample 9]
A wavelength conversion member consisting only of a quantum dot layer without a barrier layer.

[Sample 10]
The wavelength conversion member shown in FIG. On the upper surface of the quantum dot layer, the winding start end and the winding end of the barrier layer were overlapped and thermocompression bonded.

[Sample 11]
The wavelength conversion member shown in FIG. The winding start end and winding end of the barrier layer were overlapped on both sides of the quantum dot layer and thermocompression bonded.

Each of the above samples was subjected to a durability test under the conditions of a temperature of 60 ° C. and a humidity of 90%. The emission intensity was measured by a total luminous flux measurement system manufactured by Otsuka Electronics Co., Ltd. when each sample was emitted with blue (wavelength: 450 nm) LED excitation light. First, the experimental results for Samples 9 to 11 using the low-concentration quantum dot layer will be described.

FIG. 31 is a graph obtained by measuring the relationship between the elapsed time and the blue light intensity (450 nm area) from the sample 9 to the sample 11. Here, the blue light intensity is the area of the emission peak measured at a wavelength of 450 nm.

As shown in FIG. 31, in Sample 9, it was found that the blue light intensity (450 nm area) gradually increased with the passage of time. That is, it was found that the blue light intensity of the sample 9 increased with the passage of time. On the other hand, in Sample 10 and Sample 11, it was found that the blue light intensity (450 nm area) remained constant and the blue light intensity did not change even after a lapse of time. Further, in the sample 10 and the sample 11, the blue light intensity after 450 hours with respect to the blue light intensity in the initial state (time = 0h) was 0.0056 (450h) with respect to 0.0049 (time = 0h), respectively. It was 0.0053 (450h) with respect to 0.0053 (time = 0h). It was found that in Sample 10 and Sample 11, the blue light intensity after 450 hours with respect to the blue light intensity in the initial state (time = 0h) was almost unchanged, and the change in blue light intensity was within 15%. Here, the change in blue light intensity is indicated by [(blue light intensity in the initial state − blue light intensity after 450 hours) / blue light intensity in the initial state] × 100 (%) (absolute value).

FIG. 32 is a graph obtained by measuring the relationship between the elapsed time and the green light intensity (green area) from the sample 9 to the sample 11. Here, the green light intensity is the area of the emission peak measured at a wavelength of 520 nm. As shown in FIG. 32, in Sample 9, it was found that the green light intensity (green area) decreased sharply within 100 hours from the start of the experiment. As in sample 9, the increase in blue light intensity and the decrease in green light intensity mean that the green quantum dots have deteriorated over time. On the other hand, in Sample 10 and Sample 11, it was found that the blue light intensity (450 nm area) did not change and the decrease in green light intensity (green area) could be made smaller than that of Sample 9. rice field. Further, in Sample 10 and Sample 11, the change in green light intensity after 450 hours with respect to the green light intensity in the initial state (time = 0h) was 0.0016 (450h) with respect to 0.0017 (time = 0h), respectively. ), 0.0023 (450h) with respect to 0.0022 (time = 0h). It was found that in Sample 10 and Sample 11, the change in green light intensity after 450 hours with respect to the green light intensity in the initial state (time = 0h) was smaller than that in Sample 9, and the change in green light intensity was within 10%. rice field. Here, the change in green light intensity is indicated by [(green light intensity in the initial state − green light intensity after 450 hours) / green light intensity in the initial state] × 100 (%) (absolute value).

FIG. 33 is a graph obtained by measuring the relationship between the elapsed time and the red light intensity (red area) from the sample 9 to the sample 11. Here, the red light intensity is the area of the emission peak measured at a wavelength of 650 nm. As shown in FIG. 33, in Sample 9, it was found that the red light intensity (red area) decreased sharply within 50 hours from the start of the experiment. As in sample 9, the increase in blue light intensity and the decrease in red light intensity mean that the red quantum dots have deteriorated over time. On the other hand, in Sample 10 and Sample 11, it was found that the blue light intensity (450 nm area) did not change and the decrease in red light intensity (red area) could be made smaller than that of Sample 9. rice field. Further, in the sample 10 and the sample 11, the change in the red light intensity after 450 hours with respect to the red light intensity in the initial state (time = 0h) is 0.0014 (450h) with respect to 0.0017 (time = 0h), respectively. ), 0.0018 (450h) with respect to 0.0022 (time = 0h). It was found that in Sample 10 and Sample 11, the change in red light intensity after 450 hours with respect to the red light intensity in the initial state (time = 0h) was smaller than that in Sample 9, and the change in red light intensity was within 25%. rice field. Here, the change in red light intensity is indicated by [(red light intensity in the initial state − red light intensity after 450 hours) / green light intensity in the initial state] × 100 (%) (absolute value).

According to the experimental results shown in FIGS. 31 to 33, by covering the entire circumference of the quantum dot layer with a barrier layer, deterioration of the quantum dots can be appropriately suppressed, and as a result, changes in emission intensity with time can be effectively suppressed. understood.

Subsequently, the barrier film was evaluated. FIG. 34 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system from sample 9 to sample 11.

As shown in FIG. 34, no significant change in the x-coordinate with the elapsed time was observed in any of the samples. In sample 10, the change in the x-coordinate after 450 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.1892 (450h) with respect to 0.2013 (time = 0h), and the x-coordinate change is 10. It turned out to be within%. In sample 11, the change in the x-coordinate after 450 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.1998 (450h) with respect to 0.2080 (time = 0h), and the x-coordinate change is 5. It turned out to be within%. Here, the x-coordinate change is indicated by [(x-coordinate strength in the initial state −x-coordinate strength after 450 hours) / x-coordinate strength in the initial state] × 100 (%) (absolute value).

FIG. 35 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color system from sample 9 to sample 11. As shown in FIG. 35, in the sample 9 without the barrier layer, the y-coordinate changes significantly with the passage of time as compared with the sample 9 and the sample 10 in which the entire circumference of the quantum dot layer is surrounded by the barrier layer. It was seen. In sample 10, the change in the y-coordinate after 450 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.1210 (450h) with respect to 0.1428 (time = 0h), and the y-coordinate change is 20. It turned out to be within%. In sample 11, the change in the y-coordinate after 450 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.1635 (450h) with respect to 0.1626 (time = 0h), and the y-coordinate change is 1. It turned out to be within%. Here, the y-coordinate change is indicated by [(y-coordinate strength in the initial state −y-coordinate strength after 450 hours) / y-coordinate strength in the initial state] × 100 (%) (absolute value).

Moreover, when the sample 10 and the sample 11 were compared, the results obtained in the sample 11 were generally better than those in the sample 10. This is because, unlike the sample 10, in the sample 11, the winding start end and the winding end of the barrier layer are thermocompression bonded on both sides of the quantum dot layer, so that the thermal effect on the quantum dot layer at the time of thermocompression bonding is affected by the configuration of the sample 10. It is considered that this is because it was possible to reduce the amount.

Next, the experimental results for Samples 12 to 14 using the low-concentration quantum dot layer will be described.
[Sample 12]
A wavelength conversion member consisting only of a quantum dot layer without a barrier layer.

[Sample 13]
The wavelength conversion member shown in FIG. On the upper surface of the quantum dot layer, the winding start end and the winding end of the barrier layer were overlapped and thermocompression bonded.

[Sample 14]
The wavelength conversion member shown in FIG. The winding start end and winding end of the barrier layer were overlapped on both sides of the quantum dot layer and thermocompression bonded.

Each of the above samples was subjected to a durability test under the conditions of a temperature of 60 ° C. and a humidity of 90%. The emission intensity was measured by a total luminous flux measurement system manufactured by Otsuka Electronics Co., Ltd. when each sample was emitted with blue (wavelength: 450 nm) LED excitation light.

FIG. 36 is a graph obtained by measuring the relationship between the elapsed time and the blue light intensity (450 nm area) from the sample 12 to the sample 14.

As shown in FIG. 36, it was found that the blue light intensity of the sample 12 increased with the passage of time. On the other hand, in Sample 13 and Sample 14, it was found that the blue light intensity (450 nm area) remained constant and the blue light intensity did not change even after a lapse of time. Further, in the sample 13 and the sample 14, the blue light intensity after 189 hours with respect to the blue light intensity in the initial state (time = 0h) was 0.0013 (189h) with respect to 0.0010 (time = 0h), respectively. It was 0.0009 (189h) with respect to 0.0010 (time = 0h). In the sample 10 and the sample 11, the blue light intensity after 189 hours with respect to the blue light intensity in the initial state (time = 0h) is almost the same, or the change in the blue light intensity is smaller than that of the sample 12, and the blue light intensity is small. The change was found to be within 30%. Here, the change in blue light intensity is indicated by [(blue light intensity in the initial state-blue light intensity after 189 hours) / blue light intensity in the initial state] × 100 (%) (absolute value).

FIG. 37 is a graph obtained by measuring the relationship between the elapsed time and the green light intensity (green area) from the sample 12 to the sample 14. Here, the green light intensity is the area of the emission peak measured at a wavelength of 520 nm. As shown in FIGS. 36 and 37, in the samples 13 and 14, the changes in the blue light intensity (450 nm area) and the green light intensity (green area) with the passage of time can be made smaller than those in the sample 12. understood. Further, in Sample 13 and Sample 14, the change in green light intensity after 189 hours with respect to the green light intensity in the initial state (time = 0h) was 0.0019 (189h) with respect to 0.0017 (time = 0h), respectively. ), 0.0018 (189h) with respect to 0.0015 (time = 0h). In Sample 13 and Sample 14, it was found that the change in green light intensity after 189 hours with respect to the green light intensity in the initial state (time = 0h) was within 20%. Here, the change in green light intensity is indicated by [(green light intensity in the initial state-green light intensity after 189 hours) / green light intensity in the initial state] × 100 (%) (absolute value).

FIG. 38 is a graph obtained by measuring the relationship between the elapsed time and the red light intensity (red area) from the sample 12 to the sample 14. Here, the red light intensity is the area of the emission peak measured at a wavelength of 650 nm. As shown in FIGS. 36 and 38, in Sample 13 and Sample 14, changes in blue light intensity (450 nm area) and red light intensity (red area) with the passage of time can be made smaller than in Sample 12. I understood. Further, in Sample 13 and Sample 14, the change in red light intensity after 189 hours with respect to the red light intensity in the initial state (time = 0h) was 0.0039 (189h) with respect to 0.0038 (time = 0h), respectively. ), 0.0040 (189h) with respect to 0.0037 (time = 0h). In Sample 13 and Sample 14, it was found that the change in red light intensity after 189 hours with respect to the red light intensity in the initial state (time = 0h) was within 10%. Here, the change in red light intensity is indicated by [(red light intensity in the initial state-red light intensity after 189 hours) / green light intensity in the initial state] × 100 (%) (absolute value).

According to the experimental results shown in FIGS. 36 to 38, by covering the entire circumference of the quantum dot layer with a barrier layer, deterioration of the quantum dots can be appropriately suppressed, and as a result, changes in emission intensity with time can be effectively suppressed. understood.

Subsequently, the barrier film was evaluated. FIG. 39 is a graph showing the relationship between the elapsed time and the x-coordinate of the CIE color system from sample 12 to sample 14. In sample 13, the change in the x-coordinate after 189 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.3524 (189h) with respect to 0.3729 (time = 0h), and the x-coordinate change is 10. It turned out to be within%. In sample 14, the change in the x-coordinate after 189 hours with respect to the x-coordinate in the initial state (time = 0h) is 0.3811 (189h) with respect to 0.3748 (time = 0h), and the x-coordinate change is 5. It turned out to be within%. Here, the x-coordinate change is indicated by [(x-coordinate strength in the initial state-x-coordinate strength after 189 hours) / x-coordinate strength in the initial state] × 100 (%) (absolute value). Further, FIG. 40 is a graph showing the relationship between the elapsed time and the y-coordinate of the CIE color system from sample 12 to sample 14. In sample 13, the change in the y-coordinate after 189 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.3301 (189h) with respect to 0.3441 (time = 0h), and the y-coordinate change is 5. It turned out to be within%. In sample 14, the change in the y-coordinate after 189 hours with respect to the y-coordinate in the initial state (time = 0h) is 0.3580 (189h) with respect to 0.3347 (time = 0h), and the y-coordinate change is 5. It turned out to be within%. Here, the y-coordinate change is indicated by [(y-coordinate strength in the initial state-y-coordinate strength after 189 hours) / y-coordinate strength in the initial state] × 100 (%) (absolute value). As shown in FIGS. 39 and 40, the sample 13 and the sample 14 in which the quantum dot layer is surrounded by the barrier layer have variations in the x-coordinate and the y-coordinate with the elapsed time as compared with the sample 12 in which the barrier layer is not provided. It was small.

Moreover, when the sample 13 and the sample 14 were compared, the results of the sample 14 were generally better than those of the sample 13. This is because, unlike the sample 13, in the sample 14, the winding start end and the winding end of the barrier layer are thermocompression bonded on both sides of the quantum dot layer, so that the thermal effect on the quantum dot layer at the time of thermocompression bonding is affected by the configuration of the sample 13. It is considered that this is because it was possible to reduce the amount.

41 to 43 are spectra of light emitted when blue light of 450 nm is irradiated from sample 9 to sample 11. The horizontal axis is wavelength and the vertical axis is light intensity. Each figure shows the spectra after 0 hours (immediately after the start of the experiment) and 450 hours, respectively. As shown in FIG. 41, in sample 9, a remarkable change was observed in the spectrum after 0 hours and 450 hours. On the other hand, as shown in FIGS. 42 and 43, it was found that the changes in the spectra of the samples 10 and 11 were smaller than those of the sample 9 after 0 hours and 450 hours. In the sample 10 and the sample 11, the circumference of the quantum dot layer is covered with a barrier layer, whereby the deterioration of the quantum dots can be appropriately suppressed, and as a result, the change in emission intensity with time can be effectively suppressed. understood.

44 to 46 are spectra of light emitted when the sample 12 is irradiated with blue light of 450 nm. The horizontal axis is wavelength and the vertical axis is light intensity. Each figure shows the spectra after 0 hours (immediately after the start of the experiment) and after 189 hours, respectively. As shown in FIG. 44, in sample 12, significant changes were observed in the spectra after 0 hours and 189 hours. On the other hand, as shown in FIGS. 45 and 46, it was found that the changes in the spectra of the sample 13 and the sample 14 were smaller than those of the sample 12 after 0 hours and 189 hours. In the sample 13 and the sample 14, the circumference of the quantum dot layer is covered with a barrier layer, whereby the deterioration of the quantum dots can be appropriately suppressed, and as a result, the change in emission intensity with time can be effectively suppressed. understood.

In the present invention, a wavelength conversion member capable of effectively suppressing a change in emission intensity over time can be obtained, and the backlight device, a light guide member, and a light guide member having stable wavelength conversion characteristics are provided by using the wavelength conversion member of the present invention. A display device or the like can be realized.

This application is based on Japanese Patent Application No. 2014-263785 filed on December 26, 2014. All this content is included here.

Claims (3)

A quantum dot layer with quantum dots and
It is a sheet-shaped wavelength conversion member having a film arranged on the outside of the quantum dot layer.
The water vapor transmission rate (WVTR) of the film is WVTR <9 (g / m ² · day).
The quantum dot layer contains the quantum dots, a resin in which the quantum dots are dispersed, a dispersant for improving the dispersibility of the quantum dots, and a light scattering agent, and the light scattering agent is the quantum. 1 to 10 wt% is contained in the dot layer,
The film has at least an organic layer and
Wherein in a state where the organic layer toward the quantum dot layer side, via an adhesive layer, and the quantum dot layer, the wavelength conversion member, characterized in that it is a solid wear. The wavelength conversion member according to claim 1 , wherein the organic layer is formed of a PET film. It is a manufacturing method of wavelength conversion member.
The quantum dot layer contains the quantum dots, a resin in which the quantum dots are dispersed, a dispersant for improving the dispersibility of the quantum dots, and a light scattering agent, and the light scattering agent is the quantum dots. 1-10 wt% is contained in the layer,
A laminated structure in which both sides of a quantum dot layer containing the quantum dots are sandwiched between an adhesive layer and a film having at least an organic layer having ^{a water vapor transmission rate (WVTR) of less than 9 (g / m 2} · day). At this time, the laminated structure is formed with the organic layer facing the quantum dot layer side.
A method for manufacturing a wavelength conversion member, which comprises sandwiching the laminated structure between a pair of rolls and fixing the interface between the quantum dot layer and the film.

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