JP6984808B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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JP6984808B2
JP6984808B2 JP2017116094A JP2017116094A JP6984808B2 JP 6984808 B2 JP6984808 B2 JP 6984808B2 JP 2017116094 A JP2017116094 A JP 2017116094A JP 2017116094 A JP2017116094 A JP 2017116094A JP 6984808 B2 JP6984808 B2 JP 6984808B2
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semiconductor device
resin
sealing
film
base material
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JP2019003997A (en
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康平 白倉
敏史 寺崎
芳雄 藤井
敏洋 緒方
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New Japan Radio Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Moulds For Moulding Plastics Or The Like (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)

Description

本発明は、複数の半導体素子を基材上に搭載し、一括で樹脂封止してから、封止樹脂と共に基材を切断して、個々の半導体装置に個片化する半導体装置の製造方法に関する。 The present invention is a method for manufacturing a semiconductor device in which a plurality of semiconductor elements are mounted on a base material, sealed with a resin at once, and then the base material is cut together with the sealing resin to be individualized into individual semiconductor devices. Regarding.

近年、電子機器の小型化に伴い、電子機器に搭載される半導体装置も小型化が要求され、リードフレーム、セラミック基板や有機基板等の基材に複数の半導体素子を搭載して、一括樹脂封止し、封止樹脂と基材を切断して個々の半導体装置を製造するＭＡＰ（Mold Array Package）方式が採られている。 In recent years, with the miniaturization of electronic devices, the miniaturization of semiconductor devices mounted on electronic devices has also been required. A MAP (Mold Array Package) method is adopted in which each semiconductor device is manufactured by stopping and cutting the sealing resin and the base material.

一般的にＭＡＰ方式においては、封止金型の内面側に樹脂フィルム等を密着させ、半導体素子を搭載した基材を封止金型で挟持して封止樹脂を注入する。ここで樹脂フィルム等は封止金型の汚染を予防し、封止金型の内面を清浄に保つことができ、また高密着タイプの封止樹脂を用いることができることから広く用いられている。 Generally, in the MAP method, a resin film or the like is brought into close contact with the inner surface side of the encapsulating mold, and a base material on which a semiconductor element is mounted is sandwiched between the encapsulating molds and the encapsulating resin is injected. Here, a resin film or the like is widely used because it can prevent contamination of the sealing mold, keep the inner surface of the sealing mold clean, and can use a high-adhesion type sealing resin.

図７および図８は、従来のＭＡＰ方式の半導体装置の製造方法を説明する図である。図７に示すように、封止金型の一方となる上型４のキャビティの内面側に、図示しない外部の減圧装置が接続された減圧ライン８に連通する吸引孔７が開口している。樹脂フィルム等から選ばれるフィルム９は、この吸引孔７を通して吸引され、上型４の内面側に密着する。上型と、上型と対になる封止金型の他方となる下型５とで、半導体素子１を搭載しワイヤ２で接続を形成したリードフレーム等の基材３を挟持する。その後、キャビティ６に封止樹脂を注入して圧縮成形することにより、図８に示すように基材３に搭載した半導体素子１を封止樹脂部１２で樹脂封止した半導体装置中間体を形成することができる。その後、切断予定領域１４に沿ってダイシングソーを用いた切断等を行い個片化し、個々の半導体装置が完成する。 7 and 8 are diagrams illustrating a method of manufacturing a conventional MAP type semiconductor device. As shown in FIG. 7, a suction hole 7 communicating with a decompression line 8 to which an external decompression device (not shown) is connected is opened on the inner surface side of the cavity of the upper die 4 which is one of the sealing dies. The film 9 selected from the resin film and the like is sucked through the suction holes 7 and comes into close contact with the inner surface side of the upper mold 4. A base material 3 such as a lead frame on which a semiconductor element 1 is mounted and a connection is formed by a wire 2 is sandwiched between an upper mold and a lower mold 5 which is the other side of a sealing mold paired with the upper mold. Then, by injecting a sealing resin into the cavity 6 and compression molding, a semiconductor device intermediate in which the semiconductor element 1 mounted on the base material 3 is resin-sealed by the sealing resin portion 12 is formed as shown in FIG. can do. After that, cutting or the like using a dicing saw is performed along the planned cutting area 14, and the pieces are separated to complete each semiconductor device.

ところで、樹脂封止するときに金型内面に吸引孔７のような凹部が存在すると、樹脂フィルムが凸状に変形し、この凸部に封止樹脂が入り込み、封止樹脂部１２に突起が形成される可能性がある。半導体装置の表面上に突起が形成されてしまうと、外観検査工程において外観不良となる問題が生じる（特許文献１）。そのため、図７に示すように吸引孔７を半導体装置が形成される領域外に配置する。この結果、図８に示すように樹脂突起部１３は、半導体装置中間体を個片化するための切断予定領域１４のうち、周縁部の切断予定領域１４の更に外側の領域にある封止樹脂部１２の表面上に形成される。そして半導体装置中間体の周縁部の切断予定領域１４を切断することにより、樹脂突起部１３は除去され、完成する半導体装置には含まれないようにしていた。 By the way, if a concave portion such as a suction hole 7 exists on the inner surface of the mold when sealing the resin, the resin film is deformed in a convex shape, the sealing resin enters the convex portion, and a protrusion is formed on the sealing resin portion 12. Can be formed. If protrusions are formed on the surface of the semiconductor device, there arises a problem that the appearance is poor in the visual inspection process (Patent Document 1). Therefore, as shown in FIG. 7, the suction hole 7 is arranged outside the region where the semiconductor device is formed. As a result, as shown in FIG. 8, the resin protrusion 13 is a sealing resin in a region further outside the planned cutting region 14 of the peripheral portion of the planned cutting region 14 for individualizing the semiconductor device intermediate. It is formed on the surface of the portion 12. Then, by cutting the planned cutting region 14 of the peripheral portion of the semiconductor device intermediate, the resin protrusion 13 was removed so as not to be included in the completed semiconductor device.

特開２００２−１９０４８８号公報Japanese Unexamined Patent Publication No. 2002-190488

従来の製造方法によると、半導体装置の表面上に樹脂突起部１３が形成されると外観検査工程において外観不良となる。そのため、樹脂突起部１３が発生する領域を個片化工程において切断し、除去することにより完成品としての半導体装置に樹脂突起部１３が残ることはなく、半導体装置の表面は平坦な形状としていた。 According to the conventional manufacturing method, if the resin protrusion 13 is formed on the surface of the semiconductor device, the appearance is poor in the appearance inspection step. Therefore, by cutting and removing the region where the resin protrusion 13 is generated in the individualization step, the resin protrusion 13 does not remain in the semiconductor device as a finished product, and the surface of the semiconductor device has a flat shape. ..

ところで、半導体装置が小型化するに従い、従来は切断し、除去していた領域も半導体装置の形成領域とすることにより、生産性を上げて、製造コストを下げることが望まれるようになってきた。 By the way, as semiconductor devices become smaller, it has become desirable to increase productivity and reduce manufacturing costs by using regions that were conventionally cut and removed as semiconductor device forming regions. ..

本発明は、上記実状に鑑み、従来よりも生産性を上げることができる半導体装置の製造方法を提供することを目的とする。 In view of the above circumstances, it is an object of the present invention to provide a method for manufacturing a semiconductor device capable of increasing productivity as compared with the conventional case.

上記目的を達成するために、本願発明に係る半導体装置の製造方法は、複数の半導体素子を基材に搭載して一括樹脂封止し、個片化する半導体装置の製造方法において、半導体素子を基材に搭載した半導体素子搭載基材を準備する工程と、第一の封止金型と、前記第一の封止金型と対になりキャビティに吸引孔が開口する第二の封止金型を準備する工程と、前記吸引孔から吸引することにより、フィルムを前記キャビティの内面側に密着させ、前記半導体素子搭載基材を前記第一の封止金型と前記第二の封止金型で挟持し、前記キャビティ内に封止樹脂を充填し、樹脂封止部を形成する工程と、前記樹脂封止部および前記基材を切断し、個々の半導体装置に個片化する工程と、を含み、前記吸引孔を半導体装置形成領域の切断予定領域同士が直角に交わる領域に相応する前記キャビティの内面に開口するように配置するとともに、前記吸引孔の形状をＬ字状または十字状とすることと、前記吸引孔に前記フィルムを吸引させ、凸状に変形して形成される前記フィルムの凸部に充填される前記封止樹脂からなるＬ字状または十字状の樹脂突起部は、前記個片化のための前記切断予定領域の切断により除去することを特徴とする。 To achieve the above object, a method of manufacturing a semiconductor device according to the present gun onset Ming, sealed together with resin by mounting a plurality of semiconductor elements to a substrate in the method for manufacturing the semiconductor device into individual pieces, the semiconductor The process of preparing a semiconductor device-mounted base material on which the element is mounted on the base material, the first sealing mold, and the second sealing that is paired with the first sealing mold and has a suction hole in the cavity. In the step of preparing the stop mold and by sucking from the suction hole, the film is brought into close contact with the inner surface side of the cavity, and the semiconductor element mounting base material is attached to the first sealing mold and the second sealing mold. The process of sandwiching with a clasp, filling the cavity with a sealing resin to form a resin sealing portion, and cutting the resin sealing portion and the base material to individualize them into individual semiconductor devices. Including the step, the suction hole is arranged so as to open on the inner surface of the cavity corresponding to the region where the planned cutting regions of the semiconductor device forming region intersect at right angles, and the shape of the suction hole is L-shaped or An L-shaped or cross-shaped resin protrusion made of the sealing resin, which is formed in a cross shape and is filled in the convex portion of the film formed by sucking the film into the suction hole and deforming the film into a convex shape. The portion is characterized by being removed by cutting the planned cutting region for the individualization.

本発明の製造方法によれば、吸引孔を封止樹脂部の切断予定領域に配置し、樹脂突起部が形成された場合でも、個片化の際、半導体装置の上面に形成された樹脂突起部を切断することにより樹脂突起部を除去する構成とすることで、従来は切断し、除去していた領域に半導体装置を形成できるため、生産性を上げることが可能となる。 According to the manufacturing method of the present invention, the suction holes are arranged in the planned cutting region of the sealing resin portion, and even when the resin protrusions are formed, the resin protrusions formed on the upper surface of the semiconductor device at the time of individualization. By adopting a configuration in which the resin protrusion is removed by cutting the portion, a semiconductor device can be formed in a region that has been previously cut and removed, so that productivity can be increased.

本発明の製造方法は、一般的なＭＡＰ方式において使用されるフィルムを上型に密着させる際、吸引孔を設ける位置のみを変更し、通常通り樹脂封止すればよいので、追加の工程を必要とせず、製造コストの増加を招くこともない。 In the manufacturing method of the present invention, when the film used in the general MAP method is brought into close contact with the upper mold, only the position where the suction hole is provided needs to be changed and the resin is sealed as usual, so that an additional step is required. However, it does not lead to an increase in manufacturing costs.

また、上型に設ける吸引孔は、上型とブロック状の入れ子により形成することができ、吸引孔の位置は、上型と組み合わせるブロック状の入れ子の大きさにより簡便に設定可能である。そのため、半導体装置の大きさ毎に所定の位置に吸引孔を有する上型を準備する必要がなくなり、半導体装置の製造コストを抑えることが可能となる。 Further, the suction hole provided in the upper mold can be formed by nesting the upper mold and the block shape, and the position of the suction hole can be easily set by the size of the block-shaped nest combined with the upper mold. Therefore, it is not necessary to prepare an upper mold having a suction hole at a predetermined position for each size of the semiconductor device, and it is possible to reduce the manufacturing cost of the semiconductor device.

更に、吸引孔は複数個分の半導体装置毎に配置してもよいので、半導体装置毎に配置する場合と比べて上型に組み合わせる入れ子の個数が減少し、作業性を向上させることもできる。 Further, since the suction holes may be arranged for each of a plurality of semiconductor devices, the number of nests to be combined in the upper mold is reduced as compared with the case where the suction holes are arranged for each semiconductor device, and workability can be improved.

また、従来の製造方法と比較して、フィルムを吸引する吸引孔の数や配置を適宜設定することができるため、フィルムを上型の内面側に確実に密着させることができる。その結果、フィルムが上型から剥離することや、密着が不十分となる領域がなくなり、半導体素子の接続のために形成するワイヤへ接触することによるワイヤの変形、断線等が発生することも防ぐことが可能となる。 Further, as compared with the conventional manufacturing method, the number and arrangement of the suction holes for sucking the film can be appropriately set, so that the film can be reliably brought into close contact with the inner surface side of the upper mold. As a result, the film does not peel off from the upper mold, there is no region where the adhesion is insufficient, and the wire is prevented from being deformed or broken due to contact with the wire formed for connecting the semiconductor element. It becomes possible.

本発明の第１の実施例に係る半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this invention. 本発明の第１の実施例に係る半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this invention. 本発明の第１の実施例に係る半導体装置の製造方法により形成した半導体装置中間体の断面を示す図である。It is a figure which shows the cross section of the semiconductor device intermediate formed by the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this invention. 本発明の第１の実施例に係る半導体装置の製造方法を示し、ダイシングソーで個片化した状態を説明する図である。It is a figure which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this invention, and explains the state which it was individualized by a dicing saw. 本発明の第２の実施例に係る半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention. 本発明の第２の実施例に係る半導体装置の製造方法により形成した半導体装置中間体の断面を示す図である。It is a figure which shows the cross section of the semiconductor device intermediate formed by the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention. 従来の半導体装置の製造方法の一例を説明する図である。It is a figure explaining an example of the manufacturing method of the conventional semiconductor device. 従来の半導体装置の製造方法により形成した半導体装置中間体の一例の断面を示す図である。It is a figure which shows the cross section of an example of the semiconductor device intermediate formed by the conventional manufacturing method of a semiconductor device.

本発明の半導体装置の製造方法は、複数の半導体素子を基材に搭載して一括樹脂封止する際、上型の内面側に配置するフィルムを吸引するための吸引孔を、半導体装置形成領域であり封止樹脂部の切断予定領域内に配置する構成とし、従来の製造方法のように個片化後に切断し、除去される半導体装置形成領域以外の領域を形成しない。吸引孔にフィルムを吸引させると、吸引孔にフィルムが入り込み、フィルムは凸状に変形しフィルム凸部となる。続いて封止樹脂により樹脂封止すると、このフィルム凸部にも封止樹脂が入り込み、樹脂突起部として半導体装置の上面に一体成形される。しかしこの樹脂突起部は、個片化のための切断工程により除去するので、完成した半導体装置の表面上に残ることはない。以下、本発明の実施例について詳細に説明する。 In the method for manufacturing a semiconductor device of the present invention, when a plurality of semiconductor elements are mounted on a base material and collectively resin-sealed, a suction hole for sucking a film arranged on the inner surface side of the upper mold is provided in a semiconductor device forming region. Therefore, it is configured to be arranged in the planned cutting region of the sealing resin portion, and does not form a region other than the semiconductor device forming region to be cut and removed after being separated as in the conventional manufacturing method. When the film is sucked into the suction holes, the film enters the suction holes and the film is deformed into a convex shape to become a convex portion of the film. When the resin is subsequently sealed with the sealing resin, the sealing resin also enters the convex portion of the film and is integrally molded on the upper surface of the semiconductor device as the resin protrusion. However, since the resin protrusions are removed by the cutting step for individualization, they do not remain on the surface of the completed semiconductor device. Hereinafter, examples of the present invention will be described in detail.

本発明の第１の実施例について、図１乃至図４を用いて説明する。図１に示すように、封止金型の一方となる上型４には、フィルム９を吸引する吸引孔７とこの吸引孔７に連通し、外部に設けた減圧装置（図示省略）と繋がった減圧ライン８が設けてある。上型４と対になる封止金型の他方となる下型５側には半導体素子１を搭載し、ワイヤ２等によって接続した基材３（半導体素子搭載基材に相当）を載置する。 The first embodiment of the present invention will be described with reference to FIGS. 1 to 4. As shown in FIG. 1, the upper mold 4, which is one of the sealing dies, communicates with a suction hole 7 for sucking the film 9 and the suction hole 7 and is connected to an external decompression device (not shown). A decompression line 8 is provided. A semiconductor element 1 is mounted on the lower mold 5 side, which is the other side of the sealing mold paired with the upper mold 4, and a base material 3 (corresponding to a base material on which the semiconductor element is mounted) connected by a wire 2 or the like is placed. ..

基材３は、複数の半導体素子が搭載できるリードフレーム、セラミック基板、有機基板等が用いられる。 As the base material 3, a lead frame, a ceramic substrate, an organic substrate, or the like on which a plurality of semiconductor elements can be mounted is used.

吸引孔７は、上型４とブロック状の入れ子を組み合わせることにより所定の位置に配置する。具体的には半導体装置形成領域の半導体装置と半導体装置との間の切断予定領域１４に当接する位置に配置する。 The suction hole 7 is arranged at a predetermined position by combining the upper mold 4 and the block-shaped nest. Specifically, it is arranged at a position where it abuts on the planned cutting region 14 between the semiconductor device and the semiconductor device in the semiconductor device forming region.

フィルム９を上型４に密着させる際、例えば１６０℃に加熱した上型４にフィルム９を当接させて、フィルム９を軟化状態にしながら、減圧ライン８を通じて吸引孔７から吸引することにより、フィルム９を上型４の内面側の形状に追従させて密着させることができる。 When the film 9 is brought into close contact with the upper mold 4, for example, the film 9 is brought into contact with the upper mold 4 heated to 160 ° C., and the film 9 is sucked from the suction hole 7 through the pressure reducing line 8 while being in a softened state. The film 9 can be brought into close contact with the upper mold 4 by following the shape of the inner surface side.

上記工程において用いるフィルム９は、上型４への追従性、熱可塑性、樹脂封止工程における耐熱性等の熱特性、フィルムが破断しない等の機械特性又は半導体素子１への電気的破壊を生じさせない電気絶縁性等を有することが好ましい。更には上型４、封止樹脂部１２又は樹脂突起部１３との離型性をも併せ持つシリコーン系やフッ素樹脂系の樹脂フィルムが好ましい。 The film 9 used in the above step causes thermal properties such as followability to the upper mold 4, thermoplasticity, heat resistance in the resin sealing step, mechanical properties such as the film not breaking, or electrical destruction to the semiconductor element 1. It is preferable to have electrical insulation and the like that do not prevent it. Further, a silicone-based or fluororesin-based resin film having a releasability from the upper mold 4, the sealing resin portion 12 or the resin protrusion portion 13 is preferable.

本発明によると、フィルム９は上型４の内面側の形状に追従して密着し、吸引孔７の中にフィルム９が入り込む。このとき、フィルム凸部１０が形成される。このフィルム凸部１０は、フィルム９の厚さ、フィルム９が軟化する温度、フィルム９の引張り強度や吸引孔７の開口寸法等により、その高さや幅が変わるが、少なくとも個片化の際、切断し、除去される切断予定領域１４内に形成すればよい。 According to the present invention, the film 9 follows the shape of the inner surface side of the upper mold 4 and adheres to the film 9, and the film 9 enters the suction hole 7. At this time, the film convex portion 10 is formed. The height and width of the convex portion 10 of the film vary depending on the thickness of the film 9, the temperature at which the film 9 softens, the tensile strength of the film 9, the opening size of the suction hole 7, and the like, but at least when the film is separated. It may be cut and formed in the planned cutting area 14 to be removed.

次に、フィルム９を介して上型４と下型５で、半導体素子１を搭載しワイヤ２で接続を形成した基材３を挟持する。図２に示すように、吸引孔７は、半導体装置が形成される領域の上部（上型４内）に形成している。 Next, the base material 3 on which the semiconductor element 1 is mounted and the connection is formed by the wire 2 is sandwiched between the upper mold 4 and the lower mold 5 via the film 9. As shown in FIG. 2, the suction hole 7 is formed in the upper part (inside the upper mold 4) of the region where the semiconductor device is formed.

続いて、キャビティ６に封止樹脂を注入し圧縮成形を行う。このときに、吸引孔７の位置に形成されるフィルム凸部１０の中にも封止樹脂が入り込む。その結果、図３に示すように樹脂封止部１２の上面の切断予定領域１４内に樹脂突起部１３が一体成形される。図３に示すように、本発明の半導体装置中間体は、３個の半導体素子１が基材３に搭載され、樹脂封止部１２で封止されている。これは、図８で説明した従来例において、切断し、除去していた領域にも半導体装置を形成できるためである。 Subsequently, the sealing resin is injected into the cavity 6 and compression molding is performed. At this time, the sealing resin also enters the film convex portion 10 formed at the position of the suction hole 7. As a result, as shown in FIG. 3, the resin protrusion 13 is integrally molded in the planned cutting region 14 on the upper surface of the resin sealing portion 12. As shown in FIG. 3, in the semiconductor device intermediate of the present invention, three semiconductor elements 1 are mounted on a base material 3 and sealed by a resin sealing portion 12. This is because the semiconductor device can be formed in the region that has been cut and removed in the conventional example described with reference to FIG.

その後、図４に示すように切断予定領域１４を周知の方法により切断し、個片化すると半導体装置が完成する。このとき、樹脂突起部１３をダイシングソーを用いて切断することにより除去される大きさとすることで、半導体装置の表面上には残らない構成とすることができる。なお、個片化する際に図３において左右方向に存在する切断予定領域も切断することになるが、この切断予定領域内に当接する位置に吸引孔７を配置することは、必須ではない。 After that, as shown in FIG. 4, the planned cutting region 14 is cut by a well-known method and separated into pieces to complete the semiconductor device. At this time, by setting the resin protrusion 13 to a size that can be removed by cutting with a dicing saw, it is possible to make the structure so that it does not remain on the surface of the semiconductor device. It should be noted that the planned cutting area existing in the left-right direction in FIG. 3 is also cut when the pieces are separated, but it is not essential to arrange the suction hole 7 at a position where the suction hole 7 abuts in the planned cutting area.

また、個片化の方法は、ダイシングソーを用いる代わりにレーザ光を照射して切断する等、変更可能である。 Further, the method of individualization can be changed by irradiating a laser beam instead of using a dicing saw for cutting.

次に第２の実施例について説明する。上記第１の実施例では、切断予定領域１４毎に吸引孔７を配置する半導体装置の製造方法について説明したが、吸引孔７は全ての切断予定領域に配置する必要はない。 Next, a second embodiment will be described. In the first embodiment, the method of manufacturing a semiconductor device in which the suction holes 7 are arranged in each of the planned cutting regions 14 has been described, but the suction holes 7 need not be arranged in all the planned cutting regions.

図５および図６は本発明の第２の実施例の説明図であり、上述の第１の実施例で説明した図２及び図３に相当する図である。本実施例では、半導体装置中間体の外縁部に存在する切断予定領域１４内に吸引孔７を配置すればよい。つまり、上述の第１の実施例では、各切断予定領域１４内に吸引孔７を配置していたが、本実施例では一部の切断予定領域１４内に吸引孔７を配置してもよい。 5 and 6 are explanatory views of a second embodiment of the present invention, and are views corresponding to FIGS. 2 and 3 described in the first embodiment described above. In this embodiment, the suction hole 7 may be arranged in the planned cutting region 14 existing at the outer edge of the semiconductor device intermediate. That is, in the above-mentioned first embodiment, the suction holes 7 are arranged in each planned cutting area 14, but in this embodiment, the suction holes 7 may be arranged in a part of the planned cutting areas 14. ..

所望する切断予定領域１４内に吸引孔７を配置するときは、所望の形状の入れ子を準備して上型４と組み合わせればよい。なお、吸引孔７の配置は図５に示すように半導体装置中間体の外縁部に存在する切断予定領域１４に限らず、適宜設定すればよい。 When arranging the suction hole 7 in the desired cutting area 14, a nest having a desired shape may be prepared and combined with the upper die 4. The arrangement of the suction holes 7 is not limited to the planned cutting region 14 existing at the outer edge of the semiconductor device intermediate as shown in FIG. 5, and may be appropriately set.

以上説明したように本発明によれば、封止金型への吸引孔７の配置を切断予定領域１４内とすることにより、封止樹脂部１２の上面に樹脂突起部１３が形成された場合でも、切断予定領域１４内に含まれるために、個片化の際、樹脂突起部１３を切断し、除去することができる。樹脂突起部１３は、吸引孔７の形状、フィルムの厚さ等の条件によりその形状は種々変化する。例えば、吸引孔７の開口径を小さくすると、上述の実施例で説明したような樹脂突起部１３の形状に限らず、フィルム凸部１０が非常に小さくなるために樹脂突起部１３の形状が非常に小さい針状形状となったり、あるいは、樹脂突起部１３が確認できない場合もあり、樹脂突起部の形成は必須ではない。なお、吸引孔７の開口径を小さくしてもその配置や数を適宜設定すれば、フィルム９を上型４の内面側に密着させることは可能である。 As described above, according to the present invention, the resin protrusion 13 is formed on the upper surface of the sealing resin portion 12 by arranging the suction holes 7 in the sealing mold within the planned cutting region 14. However, since it is contained in the planned cutting region 14, the resin protrusion 13 can be cut and removed at the time of individualization. The shape of the resin protrusion 13 varies depending on conditions such as the shape of the suction hole 7 and the thickness of the film. For example, when the opening diameter of the suction hole 7 is reduced, the shape of the resin protrusion 13 is not limited to the shape of the resin protrusion 13 as described in the above embodiment, but the shape of the resin protrusion 13 is very small because the film protrusion 10 becomes very small. In some cases, the shape may be small and the resin protrusion 13 cannot be confirmed, so the formation of the resin protrusion is not essential. Even if the opening diameter of the suction holes 7 is reduced, the film 9 can be brought into close contact with the inner surface side of the upper mold 4 by appropriately setting the arrangement and the number thereof.

なお本発明は、上記実施例に限定されるものではないことは言うまでもない。例えば上述の実施例では、吸引孔を配置する位置を個片化の際の切断予定領域に沿って廷出する場合について説明したが、廷出する長さが短い吸引孔を断続的に配置したり、切断予定領域同士が略直角に交わる領域に配置される吸引孔の形状をＬ字状または、十字状としたり種々変更可能である。 Needless to say, the present invention is not limited to the above examples. For example, in the above-described embodiment, the case where the suction holes are arranged along the planned cutting area at the time of individualization has been described, but the suction holes having a short length to be exposed are intermittently arranged. Alternatively, the shape of the suction holes arranged in the region where the regions to be cut intersect at a substantially right angle can be changed to an L shape or a cross shape.

１…半導体素子、２…ワイヤ、３…基材、４…上型、５…下型、６…キャビティ、７…吸引孔、８…減圧ライン、９…フィルム、１０…フィルム凸部、１２…樹脂封止部、１３…樹脂突起部、１４…切断予定領域。 1 ... Semiconductor element, 2 ... Wire, 3 ... Base material, 4 ... Upper mold, 5 ... Lower mold, 6 ... Cavity, 7 ... Suction hole, 8 ... Decompression line, 9 ... Film, 10 ... Film convex part, 12 ... Resin sealing part, 13 ... resin protrusion, 14 ... planned cutting area.

Claims (1)

複数の半導体素子を基材に搭載して一括樹脂封止し、個片化する半導体装置の製造方法において、
半導体素子を基材に搭載した半導体素子搭載基材を準備する工程と、
第一の封止金型と、前記第一の封止金型と対になりキャビティに吸引孔が開口する第二の封止金型を準備する工程と、
前記吸引孔から吸引することにより、フィルムを前記キャビティの内面側に密着させ、前記半導体素子搭載基材を前記第一の封止金型と前記第二の封止金型で挟持し、前記キャビティ内に封止樹脂を充填し、樹脂封止部を形成する工程と、
前記樹脂封止部および前記基材を切断し、個々の半導体装置に個片化する工程と、を含み、
前記吸引孔を半導体装置形成領域の切断予定領域同士が直角に交わる領域に相応する前記キャビティの内面に開口するように配置するとともに、前記吸引孔の形状をＬ字状または十字状とすることと、
前記吸引孔に前記フィルムを吸引させ、凸状に変形して形成される前記フィルムの凸部に充填される前記封止樹脂からなるＬ字状または十字状の樹脂突起部は、前記個片化のための前記切断予定領域の切断により除去することを特徴とする半導体装置の製造方法。 In a method for manufacturing a semiconductor device in which a plurality of semiconductor elements are mounted on a base material, sealed with a resin at once, and separated into individual pieces.
The process of preparing a semiconductor device-mounted base material on which a semiconductor element is mounted, and
A step of preparing a first sealing mold and a second sealing mold that is paired with the first sealing mold and has a suction hole in the cavity.
By sucking from the suction hole, the film is brought into close contact with the inner surface side of the cavity, and the semiconductor element mounting base material is sandwiched between the first sealing die and the second sealing die, and the cavity is held. The process of filling the inside with a sealing resin to form a resin sealing part, and
Including a step of cutting the resin sealing portion and the base material and separating them into individual semiconductor devices.
The suction holes are arranged so as to open on the inner surface of the cavity corresponding to the region where the planned cutting regions of the semiconductor device forming region intersect at right angles, and the shape of the suction holes is L-shaped or cross-shaped. ,
The L-shaped or cross-shaped resin protrusion made of the sealing resin, which is filled in the convex portion of the film formed by sucking the film into the suction hole and deformed into a convex shape, is individualized. A method for manufacturing a semiconductor device, which comprises removing the planned cutting region by cutting.
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