JP6856199B2 - Manufacturing method of semiconductor devices - Google Patents

Manufacturing method of semiconductor devices Download PDF

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JP6856199B2
JP6856199B2 JP2017098654A JP2017098654A JP6856199B2 JP 6856199 B2 JP6856199 B2 JP 6856199B2 JP 2017098654 A JP2017098654 A JP 2017098654A JP 2017098654 A JP2017098654 A JP 2017098654A JP 6856199 B2 JP6856199 B2 JP 6856199B2
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lead
resin
cutting
semiconductor device
manufacturing
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JP2018195720A (en
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緒方　敏洋
敏洋 緒方
敏史 寺崎
敏史 寺崎
芳雄 藤井
芳雄 藤井
康平 白倉
康平 白倉
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

本発明は半導体装置の製造方法、特に樹脂封止体の底面等から端子が露出する半導体装置の製造方法に関する。 The present invention relates to a method for manufacturing a semiconductor device, particularly a method for manufacturing a semiconductor device in which terminals are exposed from the bottom surface of a resin encapsulant or the like.

近年、携帯電話、スマートフォン、タブレット等の通信機器等の小型化だけでなく、センサ搭載数の増加等で車載電子機器の小型化も進んでいる。特に車載電子機器では、高い実装信頼性を維持しながら、所定空間に搭載できる部品を作る必要があり、ショートリードを具備した半導体装置が使用される。 In recent years, not only the miniaturization of communication devices such as mobile phones, smartphones and tablets, but also the miniaturization of in-vehicle electronic devices has been progressing due to an increase in the number of sensors installed. In particular, in an in-vehicle electronic device, it is necessary to manufacture a component that can be mounted in a predetermined space while maintaining high mounting reliability, and a semiconductor device provided with a short lead is used.

図８及び図９に、従来の半導体装置の一例を示す。図において、１はダイパッド、２はリード、３は半導体素子、４は半導体素子３とリード２を接続するボンディングワイヤ、５は封止樹脂である。この種の半導体装置では、リード２の一部が封止樹脂５の側面から水平方向に突出、露出し、リード２間には封止樹脂が充填された樹脂部５ａを備えている。 8 and 9 show an example of a conventional semiconductor device. In the figure, 1 is a die pad, 2 is a lead, 3 is a semiconductor element, 4 is a bonding wire connecting the semiconductor element 3 and the lead 2, and 5 is a sealing resin. In this type of semiconductor device, a part of the leads 2 protrudes and is exposed in the horizontal direction from the side surface of the sealing resin 5, and a resin portion 5a filled with the sealing resin is provided between the leads 2.

この種の半導体装置を製造する場合、まず、半導体素子３をリードフレームのダイパッド１上に搭載し、リード２と半導体素子３の電極をボンディングワイヤ４で接続する。その後図示しない、樹脂封止のための上金型と下金型とでリードフレームを挟持し、金型内部に形成されるキャビティ内にボンディングワイヤ４で接続された半導体素子３を配置し、キャビティ内に封止樹脂を注入し、圧縮成形することにより樹脂封止を行い、樹脂封止体を形成する。 When manufacturing this type of semiconductor device, first, the semiconductor element 3 is mounted on the die pad 1 of the lead frame, and the lead 2 and the electrodes of the semiconductor element 3 are connected by a bonding wire 4. After that, the lead frame is sandwiched between the upper mold and the lower mold for resin sealing (not shown), and the semiconductor element 3 connected by the bonding wire 4 is arranged in the cavity formed inside the mold, and the cavity is formed. A sealing resin is injected into the inside and compression molding is performed to seal the resin to form a resin sealing body.

ところで、一般的に樹脂封止時には、上金型の表面に離型用シートを配置することで上金型の表面に封止樹脂が付着することを防いでいる。この離型用シートは、上金型とリード２とに挟持される際、リード２間にわずかに入り込む。その結果、樹脂封止体のリード２表面とリード２間の樹脂部５ａ表面との間に段差ｄが形成される（図９）。 By the way, generally, at the time of resin sealing, a mold release sheet is arranged on the surface of the upper mold to prevent the sealing resin from adhering to the surface of the upper mold. When the release sheet is sandwiched between the upper mold and the reed 2, it slightly enters between the reed 2. As a result, a step d is formed between the surface of the lead 2 of the resin encapsulant and the surface of the resin portion 5a between the leads 2 (FIG. 9).

その後、半導体装置予定領域間のリード連結部７を切断することで、図８及び図９に示す個々の半導体装置が製造される。 After that, by cutting the reed connecting portion 7 between the planned semiconductor device regions, the individual semiconductor devices shown in FIGS. 8 and 9 are manufactured.

ここで樹脂封止の際、上述したように離型用シートが用いられることから、図９に示すようにリード２表面とリード２間の樹脂部５ａ表面との間に段差ｄが形成される。この段差ｄは、リード連結部７を切断する際、平面形状の金型で挟持したときに、挟持部に隙間を生じさせ、密着した挟持ができない。そのため、樹脂部５ａの表面に欠け６を発生させてしまう（例えば、特許文献１）。 Here, since the mold release sheet is used for resin sealing as described above, a step d is formed between the surface of the lead 2 and the surface of the resin portion 5a between the leads 2 as shown in FIG. .. When the lead connecting portion 7 is cut, the step d creates a gap in the sandwiched portion when the lead connecting portion 7 is sandwiched by a flat mold, and the lead connecting portion 7 cannot be sandwiched in close contact with the sandwiched portion 7. Therefore, a chip 6 is generated on the surface of the resin portion 5a (for example, Patent Document 1).

特開平０６−１５１６８１号公報Japanese Unexamined Patent Publication No. 06-151681

従来の半導体装置の製造方法では、図９に示すように、樹脂部５ａの表面に欠け６が生じるという問題があった。樹脂部５ａの表面の欠け６は、半導体装置の外観不良や実装時の樹脂片の脱落となり、歩留まりを低下させ、製造コストの上昇を招いてしまう。 In the conventional method for manufacturing a semiconductor device, as shown in FIG. 9, there is a problem that the surface of the resin portion 5a is chipped 6. The chipping 6 on the surface of the resin portion 5a causes a poor appearance of the semiconductor device and the resin pieces to fall off during mounting, which lowers the yield and causes an increase in manufacturing cost.

本発明は上記問題点に鑑みてなされたものであり、その目的は、リード連結部の切断時に、樹脂部の欠けを発生させない半導体装置の製造方法を提供することにある。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that does not cause chipping of a resin portion when a lead connecting portion is cut.

前記目的を達成するために、本願請求項１に係る発明は、半導体素子搭載領域とリードがリード連結部により複数連結されたリードフレームを用意し、前記半導体素子搭載領域にそれぞれ半導体素子を搭載すると共に、各半導体素子を前記リードに接続する半導体素子搭載工程と、前記半導体素子と前記リードを封止樹脂で封止し、前記リードの一部を露出させた樹脂封止体を形成する樹脂封止工程と、前記リード連結部を切断して個々の半導体装置に個片化する切断工程と、を含み、前記樹脂封止工程は、前記露出するリード及び前記リード連結部のリード間に前記封止樹脂を充填し、少なくとも一方の面の前記リード間の封止樹脂表面が、前記一方の面の前記リード表面より低くなるように段差が形成される工程であることと、前記切断工程は、前記段差が形成された前記封止樹脂表面と前記リード表面とを隙間なく挟持し、該隙間なく挟持された前記一方の面の裏面側から、該裏面側の前記封止樹脂表面と前記リード表面に同時に接触する切断パンチを用いて切断する工程であることを特徴とする。 In order to achieve the above object, the invention according to claim 1 of the present application prepares a lead frame in which a plurality of semiconductor element mounting regions and leads are connected by a lead connecting portion, and mounts the semiconductor elements in the semiconductor element mounting regions, respectively. At the same time, a semiconductor element mounting step of connecting each semiconductor element to the lead, and a resin seal in which the semiconductor element and the lead are sealed with a sealing resin to form a resin encapsulant in which a part of the lead is exposed. The resin sealing step includes a stopping step and a cutting step of cutting the lead connecting portion and separating the lead connecting portions into individual semiconductor devices, and the resin sealing step includes the sealing between the exposed lead and the lead of the lead connecting portion. The step is a step of filling with a stop resin and forming a step so that the sealing resin surface between the leads on at least one surface is lower than the lead surface on the one surface, and the cutting step is a step. The sealing resin surface on which the step is formed and the lead surface are sandwiched without gaps, and from the back surface side of the one surface sandwiched without gaps, the sealing resin surface and the lead surface on the back surface side are sandwiched. It is characterized in that it is a step of cutting using a cutting punch that is in contact with the plastic at the same time.

本願請求項２に係る発明は、請求項１記載の半導体装置の製造方法において、前記切断工程は、前記段差を有する前記封止樹脂表面と前記リード表面とを隙間なく挟持する凹凸形状を表面に備えた金型により挟持する工程であることを特徴とする。 According to a second aspect of the present application, in the method for manufacturing a semiconductor device according to the first aspect, the cutting step has a concavo-convex shape on the surface that sandwiches the sealing resin surface having the step and the lead surface without gaps. It is characterized in that it is a process of sandwiching by a provided mold.

本願請求項３に係る発明は、請求項１又は２いずれか記載の半導体装置の製造方法において、前記切断工程は、前記切断パンチが接触する部分の前記裏面側の前記封止樹脂表面及び前記リード表面の一部を除去し、前記切断パンチの先端が、前記裏面側の前記封止樹脂表面及び前記リード表面に同時に接触する工程であることを特徴とする。 The invention according to claim 3 of the present application is the method for manufacturing a semiconductor device according to any one of claims 1 or 2, wherein in the cutting step, the sealing resin surface and the lead on the back surface side of the portion in contact with the cutting punch. It is characterized in that a part of the front surface is removed and the tip of the cutting punch is in contact with the sealing resin surface and the lead surface on the back surface side at the same time.

本発明の半導体装置の製造方法によれば、リード連結部の切断時に、リード間の樹脂部に欠けが発生することがないので、半導体装置の外観不良や実装時の樹脂片の脱落をなくし、製造コストの低減を図ることが可能となる。 According to the method for manufacturing a semiconductor device of the present invention, the resin portion between the leads does not chip when the lead connecting portion is cut, so that the appearance of the semiconductor device is not poor and the resin piece does not fall off during mounting. It is possible to reduce the manufacturing cost.

本発明の第１の実施例に係る半導体装置の製造方法におけるリード連結部の切断方法の説明図である。It is explanatory drawing of the cutting method of the lead connection part in the manufacturing method of the semiconductor device which concerns on 1st Example of this invention. 本発明の第１の実施例に係る半導体装置の製造方法におけるリード連結部の切断方法の説明図である。It is explanatory drawing of the cutting method of the lead connection part in the manufacturing method of the semiconductor device which concerns on 1st Example of this invention. 本発明の第１の実施例に係る半導体装置の製造方法により形成した半導体装置の断面図である。It is sectional drawing of the semiconductor device formed by the manufacturing method of the semiconductor device which concerns on 1st Example of this invention. 本発明の第１の実施例に係る半導体装置の製造方法により形成した半導体装置の斜視図である。It is a perspective view of the semiconductor device formed by the manufacturing method of the semiconductor device which concerns on 1st Example of this invention. 本発明の第２の実施例に係る半導体装置の製造方法におけるリード連結部の切断方法の説明図である。It is explanatory drawing of the cutting method of the lead connection part in the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention. 本発明の第２の実施例に係る半導体装置の製造方法により形成した半導体装置の断面図である。It is sectional drawing of the semiconductor device formed by the manufacturing method of the semiconductor device which concerns on 2nd Example of this invention. 本発明の第２の実施例に係る半導体装置の製造方法により形成した半導体装置の斜視図である。It is a perspective view of the semiconductor device formed by the manufacturing method of the semiconductor device which concerns on 2nd Embodiment of this invention. 従来の半導体装置の構成を示す断面図である。It is sectional drawing which shows the structure of the conventional semiconductor device. 従来の半導体装置の斜視図である。It is a perspective view of the conventional semiconductor device.

本発明の製造方法は、半導体素子搭載領域とリードがリード連結部により複数連結されたリードフレームを用いて、半導体素子搭載領域の所定の位置にそれぞれ半導体素子を搭載すると共に、半導体素子とリードとを電気的に接続して樹脂封止する。このとき、樹脂封止用の上金型の表面に離型用シートを用いて樹脂封止すると、リード表面とリード間の樹脂部表面との間に段差が生じる。そこで、この段差を隙間なく挟持し、その裏面側から段差のない樹脂部とリードとを切断パンチを用いて切断する。以下、本発明の実施例について詳細に説明する。 In the manufacturing method of the present invention, a semiconductor element is mounted at a predetermined position in the semiconductor element mounting region by using a lead frame in which a plurality of semiconductor element mounting regions and leads are connected by a reed connecting portion, and the semiconductor element and the lead are used. Is electrically connected and sealed with resin. At this time, if the surface of the upper mold for resin sealing is resin-sealed using a mold release sheet, a step is generated between the surface of the reed and the surface of the resin portion between the leads. Therefore, this step is sandwiched without a gap, and the resin portion having no step and the lead are cut from the back surface side by using a cutting punch. Hereinafter, examples of the present invention will be described in detail.

図１及び図２は、本発明の実施例１の半導体装置の製造方法におけるリード連結部の切断方法の説明図を示す。また、図３及び図４は、本発明の第１の実施例の半導体装置の製造方法により形成した半導体装置を示す。各図において、１はダイパッド、２はリード、３は半導体素子、４はボンディングワイヤ、５は封止樹脂、７は切断パンチ１１により切断されるリード連結部、８は端子、９はワーク受けダイ、９ａはワーク受けダイ９の凸部、１０はリード押え、１１は切断パンチ、１１ａは切断パンチ１１先端の切断刃、５ａは封止樹脂５の一部であり、端子８の一部を構成する樹脂部、ｄは端子８のリード２表面とリード２間の樹脂部５ａ表面との段差、Ｄはワーク受けダイ９の凸部９ａの段差である。 1 and 2 show explanatory views of a method of cutting a lead connecting portion in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. Further, FIGS. 3 and 4 show a semiconductor device formed by the method for manufacturing a semiconductor device according to the first embodiment of the present invention. In each figure, 1 is a die pad, 2 is a lead, 3 is a semiconductor element, 4 is a bonding wire, 5 is a sealing resin, 7 is a lead connecting portion cut by a cutting punch 11, 8 is a terminal, and 9 is a work receiving die. , 9a is a convex portion of the work receiving die 9, 10 is a lead retainer, 11 is a cutting punch, 11a is a cutting blade at the tip of the cutting punch 11, 5a is a part of the sealing resin 5, and constitutes a part of the terminal 8. The resin portion d is a step between the surface of the lead 2 of the terminal 8 and the surface of the resin portion 5a between the leads 2, and D is a step of the convex portion 9a of the work receiving die 9.

本実施例の半導体装置の製造方法では、半導体素子３をダイボンドするダイパッド１（半導体素子搭載領域に相当）とその周囲に配置したリード２との組が、複数リード連結部７によって連結されたリードフレームを用いる。 In the method for manufacturing a semiconductor device of this embodiment, a pair of a die pad 1 (corresponding to a semiconductor element mounting region) for die-bonding a semiconductor element 3 and a lead 2 arranged around the die pad 1 is connected by a plurality of reed connecting portions 7. Use a frame.

まず、リードフレームのダイパッド１に半導体素子３をダイボンドし、この半導体素子３の表面の電極パッドとリード２とを導電性のボンディングワイヤ４で接続する。 First, the semiconductor element 3 is die-bonded to the die pad 1 of the lead frame, and the electrode pad on the surface of the semiconductor element 3 and the lead 2 are connected by a conductive bonding wire 4.

次に、樹脂封止用の金型を用意する。樹脂封止用の金型は上金型と下金型からなり、この上金型と下金型との間に形成されたキャビティ内に封止樹脂を注入する。一般的に、上金型の表面に離型用シートを配置して、半導体素子３をダイボンドし、必要な接続を形成したリードフレームを挟持する。そして、キャビティ内へ封止樹脂を注入することにより、ダイパッド１、リード２の一部、半導体素子３、ボンディングワイヤ４を封止した樹脂封止体を形成する。 Next, a mold for resin sealing is prepared. The resin sealing mold is composed of an upper mold and a lower mold, and the sealing resin is injected into a cavity formed between the upper mold and the lower mold. Generally, a mold release sheet is arranged on the surface of the upper mold, the semiconductor element 3 is die-bonded, and a lead frame having a necessary connection is sandwiched. Then, by injecting the sealing resin into the cavity, a resin sealing body in which the die pad 1, a part of the reed 2, the semiconductor element 3, and the bonding wire 4 are sealed is formed.

また端子８は、図４に示すように封止樹脂５から露出したリード２と樹脂部５ａとが、交互に配置する構造となっている。ここで、リードフレームを樹脂封止用の金型で挟持する際、上金型の表面に離型用シートを配置して樹脂封止を行うため、挟持した際に離型用シートがリード２間に入り込み、リード２の表面よりリード２間の樹脂部５ａ表面が低くなり、段差ｄが形成される。 Further, as shown in FIG. 4, the terminal 8 has a structure in which the leads 2 exposed from the sealing resin 5 and the resin portion 5a are alternately arranged. Here, when the lead frame is sandwiched between the resin sealing molds, the release sheet is arranged on the surface of the upper mold to perform resin sealing, so that the release sheet is the lead 2 when sandwiched. The surface of the resin portion 5a between the leads 2 becomes lower than the surface of the leads 2 to form a step d.

次に、段差ｄを有するリードフレームを切断することにより、個々の半導体装置に個片化する。まず図１に示すように、ワーク受けダイ９上に、リードフレームを載置し、反対面側からリード押え１０で挟持する。リード押え１０に当接するリード連結部７の当接面は、リード２表面と樹脂部５ａ表面とが段差のない形状となっているので、リード押え１０の当接面を平面形状とすることにより、隙間なく密接させることができる。 Next, the lead frame having the step d is cut into individual semiconductor devices. First, as shown in FIG. 1, a lead frame is placed on the work receiving die 9, and is sandwiched by the lead retainer 10 from the opposite surface side. The contact surface of the lead connecting portion 7 that comes into contact with the lead retainer 10 has a shape in which the surface of the lead 2 and the surface of the resin portion 5a have no step. , Can be brought into close contact without gaps.

一方、図４で説明したように、ワーク受けダイ９に当接するリード２表面は、リード２間の樹脂部５ａ表面より高く、段差ｄが形成されている。図２にワーク受けダイ９でリード２と樹脂部５ａを挟持する状態の説明図を示す。この図２は、図１に示すワーク受けダイ９の凸部９ａとリード２の当接部分を、図１に直交する面から見た一部断面図である。図２に示すように、隣り合うリード２の間に、段差ｄ分だけ低くなった樹脂部５ａ表面にワーク受けダイ９の凸部９ａが当接し、リード２表面はワーク受けダイ９の凸部９ａ以外の部分が当接する構成としている。 On the other hand, as described with reference to FIG. 4, the surface of the reed 2 in contact with the work receiving die 9 is higher than the surface of the resin portion 5a between the leads 2 and a step d is formed. FIG. 2 shows an explanatory diagram of a state in which the lead 2 and the resin portion 5a are sandwiched by the work receiving die 9. FIG. 2 is a partial cross-sectional view of the contact portion between the convex portion 9a of the work receiving die 9 and the lead 2 shown in FIG. 1 as viewed from a plane orthogonal to FIG. As shown in FIG. 2, the convex portion 9a of the work receiving die 9 comes into contact with the surface of the resin portion 5a lowered by the step d between the adjacent leads 2, and the surface of the lead 2 is the convex portion of the work receiving die 9. It is configured so that parts other than 9a come into contact with each other.

このように構成したワーク受けダイ９とリード押え１０によりリードフレームを挟持すると、樹脂部５ａ表面と凸部９ａ表面とを隙間なく密接させることができる。 When the lead frame is sandwiched between the workpiece receiving die 9 and the lead retainer 10 configured in this way, the surface of the resin portion 5a and the surface of the convex portion 9a can be brought into close contact with each other without a gap.

次に切断工程では、先端に切断刃１１ａを有する切断パンチ１１を用意する。まず切断刃１１ａについて詳細に説明する。図１に示すように切断刃１１ａを切断パンチ１１の両端に形成する。このように形成することで隣接する半導体装置の間に配置された、リード連結部７を同時に切断することができる。切断刃１１ａの刃先は、鋭角の片刃形状とするのが好ましく、図１に示すように、切断パンチ１１の両側面の延長に切断刃１１ａの刃先を配置することで、切断後に残るリード２や樹脂部５ａに不要な負荷をかけずに切断することが可能となっている。切断刃１１ａの刃先形状は、リード連結部７を良好に切断できれば、特に限定しない。 Next, in the cutting step, a cutting punch 11 having a cutting blade 11a at the tip is prepared. First, the cutting blade 11a will be described in detail. As shown in FIG. 1, cutting blades 11a are formed at both ends of the cutting punch 11. By forming in this way, the lead connecting portion 7 arranged between the adjacent semiconductor devices can be cut at the same time. The cutting edge of the cutting blade 11a preferably has an acute-angled single-edged shape. As shown in FIG. 1, by arranging the cutting edge of the cutting blade 11a as an extension of both side surfaces of the cutting punch 11, the lead 2 remaining after cutting and the lead 2 It is possible to cut the resin portion 5a without applying an unnecessary load. The shape of the cutting edge of the cutting blade 11a is not particularly limited as long as the lead connecting portion 7 can be cut well.

なお、切断刃１１ａを切断パンチ１１の先端面の一方端側のみに設けることも可能である。この場合は、切断後に残るリード２や樹脂部５ａに不要な負荷をかけずに切断できるようにすればよい。 It is also possible to provide the cutting blade 11a only on one end side of the tip surface of the cutting punch 11. In this case, the reed 2 and the resin portion 5a remaining after cutting may be cut without applying an unnecessary load.

切断を行う際には、リード２をワーク受けダイ９とリード押え１０とにより隙間なく挟持した後、上述の切断パンチ１１により切断する。切断パンチ１１の先端に設けた切断刃１１ａは、その先端がリード連結部７のリード２と樹脂部５ａに接触し、この接触部に剪断応力が集中することにより良好に切断される。特に本実施例では、リード連結部７のリード２と樹脂部５ａは、ワーク受けダイ９とリード押え１０によって隙間なく挟持しているため、切断されずに残る樹脂部５ａに、樹脂欠けを起こさせるだけの切断刃１１ａによる剪断応力が伝わらない。その結果、樹脂部５ａに欠けが生じることはない。 When cutting, the lead 2 is sandwiched between the work receiving die 9 and the lead retainer 10 without a gap, and then cut by the cutting punch 11 described above. The cutting blade 11a provided at the tip of the cutting punch 11 is satisfactorily cut when the tip of the cutting blade 11a comes into contact with the reed 2 of the lead connecting portion 7 and the resin portion 5a and the shear stress is concentrated on the contact portion. In particular, in this embodiment, since the lead 2 and the resin portion 5a of the lead connecting portion 7 are sandwiched by the work receiving die 9 and the lead retainer 10 without a gap, the resin portion 5a remaining uncut causes resin chipping. The shear stress caused by the cutting blade 11a is not transmitted. As a result, the resin portion 5a is not chipped.

このように切断パンチを用いることにより、ダイシングソーを用いて切断する方法に比べて、一括で製造できるので、低コスト、高スループットが可能となる。 By using the cutting punch in this way, it is possible to manufacture in a batch as compared with the method of cutting using a dicing saw, so that low cost and high throughput can be achieved.

図３及び図４は、上述の製造方法によって形成した半導体装置であり、この半導体装置は樹脂部５ａが欠けることはない。 3 and 4 are semiconductor devices formed by the above-mentioned manufacturing method, and the semiconductor device does not lack the resin portion 5a.

次に第２の実施例について説明する。上述の第１の実施例では、図４に示すように段差ｄは端子８の一方の面のみに形成される場合について説明した。本実施例では、端子８の表裏両面に段差ｄが形成される場合について説明する。 Next, a second embodiment will be described. In the first embodiment described above, as shown in FIG. 4, the case where the step d is formed on only one surface of the terminal 8 has been described. In this embodiment, a case where a step d is formed on both the front and back surfaces of the terminal 8 will be described.

図５は、本発明の第２の実施例の半導体装置の製造方法におけるリード連結部の切断方法の説明図を示す。また図６及び図７は、本発明の第２の実施例の半導体装置の製造方法により形成した半導体装置を示す。 FIG. 5 shows an explanatory diagram of a method of cutting a lead connecting portion in the method of manufacturing a semiconductor device according to a second embodiment of the present invention. 6 and 7 show a semiconductor device formed by the method for manufacturing a semiconductor device according to a second embodiment of the present invention.

本実施例の半導体装置の製造方法では、上記第１の実施例同様、半導体装置をダイボンドするダイパッド１（半導体素子載置領域に相当）とその周囲に配置されたリード２の組が、複数リード連結部によって連結されたリードフレームを用いる。 In the method for manufacturing a semiconductor device of this embodiment, as in the first embodiment, a plurality of sets of a die pad 1 (corresponding to a semiconductor element mounting region) for die-bonding the semiconductor device and leads 2 arranged around the die pad 1 are used as a plurality of leads. A lead frame connected by a connecting portion is used.

まず、リードフレームのダイパッド１に半導体素子３をダイボンドし、この半導体素子３の電極パッドとリード２とを導電性のボンディングワイヤ４で接続する。 First, the semiconductor element 3 is die-bonded to the die pad 1 of the lead frame, and the electrode pad of the semiconductor element 3 and the lead 2 are connected by a conductive bonding wire 4.

次に樹脂封止用の金型を用意する。上述の第１の実施例では、上金型の表面に離型用シートのみを配置する場合について説明したが、本実施例では、更に下金型の表面にも離型用シートを配置して、半導体素子３をダイボンドし、必要な接続を形成したリードフレームを挟持する。そして、キャビティ内へ封止樹脂を注入することにより、半導体素子３、リード２を封止した樹脂封止体を形成する。 Next, a mold for sealing the resin is prepared. In the first embodiment described above, the case where only the release sheet is arranged on the surface of the upper mold has been described, but in this embodiment, the release sheet is further arranged on the surface of the lower mold. , The semiconductor element 3 is die-bonded to sandwich the lead frame forming the necessary connection. Then, by injecting the sealing resin into the cavity, a resin sealing body in which the semiconductor element 3 and the lead 2 are sealed is formed.

また端子８は、図７に示すように封止樹脂５から露出したリード２と樹脂部５ａとが、交互に配置する構造となっている。ここで、リードフレームを樹脂封止用の金型で挟持する際、上金型の表面及び下金型の表面に離型用シートを配置して樹脂封止を行うため、挟持した際に離型用シートがリード２間に上下両側から入り込み、図６及び図７に示すようにリード２の表面及び裏面よりリード２間の樹脂部５ａの表面及び裏面がそれぞれ低くなり、両面に段差ｄが形成される。 Further, as shown in FIG. 7, the terminal 8 has a structure in which the leads 2 exposed from the sealing resin 5 and the resin portion 5a are alternately arranged. Here, when the lead frame is sandwiched between the resin sealing molds, the release sheet is arranged on the surface of the upper mold and the surface of the lower mold to perform resin sealing. The mold sheet enters between the leads 2 from both the upper and lower sides, and as shown in FIGS. 6 and 7, the front and back surfaces of the resin portion 5a between the leads 2 are lower than the front and back surfaces of the leads 2, and steps d are formed on both sides. It is formed.

次に本実施例では、半導体装置に個片化する工程の前に、切断パンチ１１の先端に設けた切断刃１１ａと接触するリード連結部７に、ダイシングソー等を用いて溝１２を形成する。図５に示すように溝１２は、切断パンチ１１の切断刃１１ａの先端が、切断時に溝１２の中でリード２及び樹脂部５ａに当接する位置に形成する。この溝１２は、図５及び図６に示す形状の他、種々変更した形状とすることができ、例えば、切断パンチ１１の幅の大きさの一個所の溝としてもよい。なお、溝１２の深さは、切断刃１１ａの先端が溝１２の内面に接触したときに、切断パンチ１１の切断刃１１ａ以外の部分が、リード連結部７と接触しないように形成するのが望ましい。 Next, in this embodiment, a groove 12 is formed in the lead connecting portion 7 in contact with the cutting blade 11a provided at the tip of the cutting punch 11 by using a dicing saw or the like before the step of individualizing the semiconductor device. .. As shown in FIG. 5, the groove 12 is formed at a position where the tip of the cutting blade 11a of the cutting punch 11 abuts on the lead 2 and the resin portion 5a in the groove 12 at the time of cutting. In addition to the shapes shown in FIGS. 5 and 6, the groove 12 may have variously modified shapes, and may be, for example, a single groove having a width of the cutting punch 11. The depth of the groove 12 is formed so that when the tip of the cutting blade 11a comes into contact with the inner surface of the groove 12, the portion of the cutting punch 11 other than the cutting blade 11a does not come into contact with the lead connecting portion 7. desirable.

なお、溝１２には予めはんだめっきを施すことによって、リード２の一部が側面電極としても機能し、実装信頼性の向上、実装基板へ実装した後のはんだによる接合状態の可視化にも有効である。 By pre-solder plating the groove 12, a part of the lead 2 also functions as a side electrode, which is effective for improving mounting reliability and visualizing the bonding state by solder after mounting on the mounting board. is there.

続いて、上述の第１の実施例で説明したワーク受けダイ９、リード押え１０及び切断パンチ１１を用いて個片化する。まず、リード２と樹脂部５ａとをワーク受けダイ９とリード押え１０とにより挟持した後に、溝１２に切断刃１１ａを侵入させる。このとき切断刃１１ａは、その先端が溝１２の内に露出するリード２と封止樹脂５に同時に接触し、この接触部に剪断応力が集中することにより良好に切断される。特に本実施例では、リード２と樹脂部５ａが、少なくとも切断パンチ１１により応力が加わる側と反対側をワーク受けダイ９に密着させ、応力が加わる側はわずかに隙間（段差による隙間）がある状態でリード押え１０で挟持した場合であっても、溝１２を設けることで、切断されずに残る樹脂部５ａに、樹脂欠けを起こさせるだけの切断刃１１ａによる剪断応力が伝わらない。その結果、樹脂部５ａに欠けが生じることはない。 Subsequently, the work receiving die 9, the lead retainer 10, and the cutting punch 11 described in the first embodiment described above are used to separate the pieces. First, the reed 2 and the resin portion 5a are sandwiched between the work receiving die 9 and the reed retainer 10, and then the cutting blade 11a is inserted into the groove 12. At this time, the cutting blade 11a is satisfactorily cut by simultaneously contacting the reed 2 whose tip is exposed in the groove 12 and the sealing resin 5 and the shear stress is concentrated on the contact portion. In particular, in this embodiment, the lead 2 and the resin portion 5a are brought into close contact with the work receiving die 9 at least on the side opposite to the side to which the stress is applied by the cutting punch 11, and there is a slight gap (gap due to a step) on the side to which the stress is applied. Even when the lead retainer 10 is sandwiched in this state, by providing the groove 12, the shear stress by the cutting blade 11a that causes the resin to chip is not transmitted to the resin portion 5a that remains without being cut. As a result, the resin portion 5a is not chipped.

このようにして形成した半導体装置は、端子８の先端の底面側に、図６及び図７に示すように、溝１２の一部が残る構造となる。 The semiconductor device thus formed has a structure in which a part of the groove 12 remains on the bottom surface side of the tip of the terminal 8, as shown in FIGS. 6 and 7.

以上本発明の実施例について説明したが、本発明は上記実施例に限定されるものでないことは言うまでもない。例えば、上述の第１の実施例において、上述の第２の実施例同様、溝１２を形成したり、上述の第２の実施例においてリード押え１０にワーク受けダイ９に設けた凸部９ａに相当する凸部を形成し、溝１２を形成しない構成としたりしても、樹脂部５ａに欠けを発生させることなく、半導体装置を製造することができる。 Although the examples of the present invention have been described above, it goes without saying that the present invention is not limited to the above examples. For example, in the first embodiment described above, a groove 12 is formed as in the second embodiment described above, or in the convex portion 9a provided on the work receiving die 9 on the lead retainer 10 in the second embodiment described above. Even if the corresponding convex portion is formed and the groove 12 is not formed, the semiconductor device can be manufactured without causing a chip in the resin portion 5a.

１…ダイパッド、２…リード、３…半導体素子、４…ボンディングワイヤ、５…封止樹脂、５ａ…樹脂部、６…欠け、７…リード連結部、８…端子、９…ワーク受けダイ、９ａ…凸部、１０…リード押え、１１…切断パンチ、１１ａ…切断刃、１２…溝、ｄ，Ｄ…段差。 1 ... Die pad, 2 ... Lead, 3 ... Semiconductor element, 4 ... Bonding wire, 5 ... Sealing resin, 5a ... Resin part, 6 ... Chip, 7 ... Lead connecting part, 8 ... Terminal, 9 ... Work receiving die, 9a ... Convex part, 10 ... Reed presser, 11 ... Cutting punch, 11a ... Cutting blade, 12 ... Groove, d, D ... Step.

Claims (3)

半導体素子搭載領域とリードがリード連結部により複数連結されたリードフレームを用意し、前記半導体素子搭載領域にそれぞれ半導体素子を搭載すると共に、各半導体素子を前記リードに接続する半導体素子搭載工程と、
前記半導体素子と前記リードを封止樹脂で封止し、前記リードの一部を露出させた樹脂封止体を形成する樹脂封止工程と、
前記リード連結部を切断して個々の半導体装置に個片化する切断工程と、を含み、
前記樹脂封止工程は、前記露出するリード及び前記リード連結部のリード間に前記封止樹脂を充填し、少なくとも一方の面の前記リード間の封止樹脂表面が、前記一方の面の前記リード表面より低くなるように段差が形成される工程であることと、
前記切断工程は、前記段差が形成された前記封止樹脂表面と前記リード表面とを隙間なく挟持し、該隙間なく挟持された前記一方の面の裏面側から、該裏面側の前記封止樹脂表面と前記リード表面に同時に接触する切断パンチを用いて切断する工程であることを特徴とする半導体装置の製造方法。 A lead frame in which a plurality of semiconductor element mounting regions and leads are connected by a lead connecting portion is prepared, semiconductor elements are mounted in the semiconductor element mounting regions, and each semiconductor element is connected to the leads.
A resin encapsulation step in which the semiconductor element and the reed are sealed with a sealing resin to form a resin encapsulant in which a part of the reed is exposed.
Including a cutting step of cutting the lead connecting portion and separating it into individual semiconductor devices.
In the resin sealing step, the sealing resin is filled between the exposed lead and the lead of the lead connecting portion, and the sealing resin surface between the leads on at least one surface is the lead on one surface. It is a process in which a step is formed so that it is lower than the surface, and
In the cutting step, the sealing resin surface on which the step is formed and the lead surface are sandwiched without gaps, and the sealing resin on the back surface side is sandwiched from the back surface side of the one surface without gaps. A method for manufacturing a semiconductor device, which comprises a step of cutting using a cutting punch that simultaneously contacts the surface and the lead surface. 請求項１記載の半導体装置の製造方法において、前記切断工程は、前記段差を有する前記封止樹脂表面と前記リード表面とを隙間なく挟持する凹凸形状を表面に備えた金型により挟持する工程であることを特徴とする半導体装置の製造方法。 In the method for manufacturing a semiconductor device according to claim 1, the cutting step is a step of sandwiching the sealing resin surface having a step and the lead surface by a mold having an uneven shape on the surface. A method for manufacturing a semiconductor device, which is characterized by being present. 請求項１又は２いずれか記載の半導体装置の製造方法において、前記切断工程は、前記切断パンチが接触する部分の前記裏面側の前記封止樹脂表面及び前記リード表面の一部を除去し、前記切断パンチの先端が、前記裏面側の前記封止樹脂表面及び前記リード表面に同時に接触する工程であることを特徴とする半導体装置の製造方法。 In the method for manufacturing a semiconductor device according to any one of claims 1 or 2, the cutting step removes a part of the sealing resin surface and the lead surface on the back surface side of the portion in contact with the cutting punch. A method for manufacturing a semiconductor device, wherein the tip of the cutting punch is in contact with the sealing resin surface on the back surface side and the lead surface at the same time.
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