JP6966552B2 - スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法 - Google Patents

スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法 Download PDF

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Publication number
JP6966552B2
JP6966552B2 JP2019532686A JP2019532686A JP6966552B2 JP 6966552 B2 JP6966552 B2 JP 6966552B2 JP 2019532686 A JP2019532686 A JP 2019532686A JP 2019532686 A JP2019532686 A JP 2019532686A JP 6966552 B2 JP6966552 B2 JP 6966552B2
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voltage
electrodes
electrode
spatter
pair
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JP2019532686A
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Japanese (ja)
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JP2020503436A (ja
Inventor
ヒュンチャン パク，
アンドレアス クレッペル，
アジャイ サンパース ボーロカム，
ピピ ツァイ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
JP2019532686A 2016-12-19 2016-12-19 スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法 Active JP6966552B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/081768 WO2018113904A1 (en) 2016-12-19 2016-12-19 Sputter deposition source and method of depositing a layer on a substrate

Publications (2)

Publication Number Publication Date
JP2020503436A JP2020503436A (ja) 2020-01-30
JP6966552B2 true JP6966552B2 (ja) 2021-11-17

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JP2019532686A Active JP6966552B2 (ja) 2016-12-19 2016-12-19 スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法

Country Status (5)

Country Link
JP (1) JP6966552B2 (zh)
KR (1) KR102192566B1 (zh)
CN (1) CN110050325B (zh)
TW (1) TWI744436B (zh)
WO (1) WO2018113904A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111893441A (zh) * 2019-05-06 2020-11-06 领凡新能源科技(北京)有限公司 膜层的制备方法和反应腔室
CN110944442B (zh) * 2019-12-02 2020-12-18 珠海格力电器股份有限公司 一种互补等离子发生电路、控制方法及等离子发生器
US20230097276A1 (en) * 2020-03-13 2023-03-30 Evatec Ag Apparatus and process with a dc-pulsed cathode array
CN111206229B (zh) * 2020-03-16 2024-06-18 杭州朗旭新材料科技有限公司 一种薄膜制备设备和薄膜制备方法
CN114651085A (zh) * 2020-05-11 2022-06-21 应用材料公司 在基板上沉积薄膜晶体管层的方法和溅射沉积设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831679B1 (en) * 1995-06-05 2008-10-01 Musashino Kikai Co., Ltd. Power supply for multielectrode discharge
JP3096258B2 (ja) * 1997-07-18 2000-10-10 芝浦メカトロニクス株式会社 毎葉式マグネトロンスパッタ装置
EP1970465B1 (en) * 2007-03-13 2013-08-21 JDS Uniphase Corporation Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index
GB2459103A (en) * 2008-04-09 2009-10-14 Univ Sheffield Biased plasma assisted processing
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
JP5339965B2 (ja) * 2009-03-02 2013-11-13 株式会社アルバック スパッタリング装置用の交流電源
WO2013178288A1 (en) * 2012-06-01 2013-12-05 Applied Materials, Inc. Method for sputtering for processes with a pre-stabilized plasma
CN107532282B (zh) * 2015-05-08 2021-02-23 应用材料公司 制造用于显示器制造的层堆叠的方法和其设备

Also Published As

Publication number Publication date
TWI744436B (zh) 2021-11-01
JP2020503436A (ja) 2020-01-30
CN110050325B (zh) 2021-11-09
WO2018113904A1 (en) 2018-06-28
TW201827634A (zh) 2018-08-01
CN110050325A (zh) 2019-07-23
KR102192566B1 (ko) 2020-12-18
KR20190094223A (ko) 2019-08-12

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