JP6960421B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP6960421B2
JP6960421B2 JP2019009476A JP2019009476A JP6960421B2 JP 6960421 B2 JP6960421 B2 JP 6960421B2 JP 2019009476 A JP2019009476 A JP 2019009476A JP 2019009476 A JP2019009476 A JP 2019009476A JP 6960421 B2 JP6960421 B2 JP 6960421B2
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Japan
Prior art keywords
plasma processing
power supply
chamber
frequency power
period
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JP2019009476A
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English (en)
Japanese (ja)
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JP2020119982A (ja
JP2020119982A5 (https=
Inventor
裕介 青木
信也 森北
敏勝 戸花
郁弥 高田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2019009476A priority Critical patent/JP6960421B2/ja
Priority to KR1020200004218A priority patent/KR102810325B1/ko
Priority to US16/743,788 priority patent/US11062882B2/en
Priority to CN202010041705.3A priority patent/CN111477531A/zh
Priority to TW109101319A priority patent/TWI849037B/zh
Publication of JP2020119982A publication Critical patent/JP2020119982A/ja
Publication of JP2020119982A5 publication Critical patent/JP2020119982A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019009476A 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法 Active JP6960421B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法
KR1020200004218A KR102810325B1 (ko) 2019-01-23 2020-01-13 플라즈마 처리 장치 및 플라즈마 처리 방법
US16/743,788 US11062882B2 (en) 2019-01-23 2020-01-15 Plasma processing apparatus and plasma processing method
CN202010041705.3A CN111477531A (zh) 2019-01-23 2020-01-15 等离子体处理装置及等离子体处理方法
TW109101319A TWI849037B (zh) 2019-01-23 2020-01-15 電漿處理裝置及電漿處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2020119982A JP2020119982A (ja) 2020-08-06
JP2020119982A5 JP2020119982A5 (https=) 2021-10-14
JP6960421B2 true JP6960421B2 (ja) 2021-11-05

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JP2019009476A Active JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (1) US11062882B2 (https=)
JP (1) JP6960421B2 (https=)
KR (1) KR102810325B1 (https=)
CN (1) CN111477531A (https=)
TW (1) TWI849037B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102932766B1 (ko) * 2021-09-08 2026-03-04 삼성전자주식회사 고전압 전원 장치 및 이를 포함하는 플라즈마 식각 장비

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
KR101247857B1 (ko) * 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5466480B2 (ja) * 2009-02-20 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
WO2018105700A1 (ja) * 2016-12-08 2018-06-14 東京エレクトロン株式会社 プラズマ溶射装置及び電池用電極の製造方法
KR102730398B1 (ko) * 2017-12-07 2024-11-13 램 리써치 코포레이션 반도체 rf 플라즈마 프로세싱을 위한 펄싱 내 rf 펄싱
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage

Also Published As

Publication number Publication date
JP2020119982A (ja) 2020-08-06
TW202033059A (zh) 2020-09-01
US20200234925A1 (en) 2020-07-23
KR102810325B1 (ko) 2025-05-20
TWI849037B (zh) 2024-07-21
KR20200091811A (ko) 2020-07-31
US11062882B2 (en) 2021-07-13
CN111477531A (zh) 2020-07-31

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