JP6952620B2 - シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 - Google Patents
シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 Download PDFInfo
- Publication number
- JP6952620B2 JP6952620B2 JP2018030576A JP2018030576A JP6952620B2 JP 6952620 B2 JP6952620 B2 JP 6952620B2 JP 2018030576 A JP2018030576 A JP 2018030576A JP 2018030576 A JP2018030576 A JP 2018030576A JP 6952620 B2 JP6952620 B2 JP 6952620B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- silicon
- amorphous
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
Description
まず、本発明の第1の実施形態に係る成膜方法について説明する。本実施形態は、単結晶上に同じ材料からなる非晶質膜を形成する場合について説明する。
図1は本発明の第1の実施形態に係る成膜方法の一例を示すフローチャート、図2はその際の被処理基板の状態を概略的に示す工程断面図である。
Cl2ガス流量:300〜5000sccm
処理時間 :0.5〜5min
処理温度 :50〜400℃
処理圧力 :1.33〜666.6Pa(0.01〜5Torr)
Si2H6ガス流量:10〜1000sccm
処理時間 :1min以上
処理温度 :350〜450℃
処理圧力 :13.3〜1333.3Pa(0.1〜10Torr)
表面の酸化膜が除去された清浄な単結晶シリコンの上に直接シリコン原料ガスを供給すると、下地の単結晶の格子定数を引きずってエピタキシャル成長しやすく、一般的に、ほぼ単結晶のSi膜が成膜される。
単結晶Siの酸化膜を除去した後の表面は、図4(a)に示すように水素終端(未結合手を含む)されているが、水素終端は結合が弱いため、その表面にシリコン原料ガスが供給されると、図4(b)に示すように、Hが容易にSiに置き換わり、Siがエピタキシャル成長していく。これに対し、ハロゲン元素であるClを単結晶シリコンの表面に吸着させると、図5(a)に示すように、水素終端の一部がハロゲン元素であるClに置き換わり、Cl終端が形成される。この状態でシリコン原料ガスが供給されると、ハロゲン元素であるClはHよりも下地のSiとの結合が強いため、図5(b)に示すように、Cl終端はSiに置き換わらず、格子のミスマッチが生じてエピタキシャル成長が阻害される。このため、単結晶Si面にハロゲン元素が吸着されることにより、その全面にほぼ完全にアモルファスのSi膜(a−Si膜)4を成膜することができる。
次に、本発明の第2の実施形態に係る成膜方法について説明する。本実施形態は、単結晶上に異なる材料からなる非晶質膜を形成する場合について説明する。
図11は本発明の第1の実施形態に係る成膜方法の一例を示すフローチャート、図12はその際の被処理基板の状態を概略的に示す工程断面図である。
SiH4ガス流量:0を超え〜5000sccm
Ge2H4ガス流量:0を超え〜5000sccm
処理時間 :5min以上
処理温度 :250〜450℃
処理圧力 :13.33〜533.2Pa(0.1〜4Torr)
表面の酸化膜が除去された清浄な単結晶シリコン上に直接シリコン原料ガスおよびゲルマニウム原料ガスを供給すると、下地の単結晶の格子定数を引きずってエピタキシャル成長しやすく、ほぼ単結晶のSiGe膜が成膜される。
次に、上記第1、第2の実施形態に係る成膜方法を実施することが可能な成膜装置の一例について説明する。
以上、本発明の実施の形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その要旨を逸脱しない範囲で種々変形可能である。
2;酸化膜
3;ハロゲン元素
4;a−Si膜
5;残留酸素
6;ファセット
7;単結晶Si膜
8;a−SiGe膜
9;ミスフィット転移
10;単結晶SiGe膜
Claims (12)
- 被処理面として単結晶シリコンまたは単結晶ゲルマニウムまたは単結晶シリコンゲルマニウムを有する被処理体の前記被処理面上に、シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法であって、
前記被処理体を準備する第1工程と、
前記被処理体の被処理面にハロゲン元素を吸着させる第2工程と、
前記被処理体にシリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜するための原料ガスを供給し、前記被処理体の前記被処理面上に非晶質シリコン膜または非晶質ゲルマニウム膜または非晶質シリコンゲルマニウム膜を成膜する第3工程と
を備えることを特徴とする方法。 - 前記第2工程のハロゲン元素はCl、F、Br、およびIから選択される少なくとも一種であることを特徴とする請求項1に記載の方法。
- 前記第2工程は、前記被処理体にハロゲン元素含有ガスを供給することにより行われることを特徴とする請求項1または請求項2に記載の方法。
- 前記ハロゲン元素含有ガスは、Cl2ガス、HClガス、HBrガス、Br2ガス、HIガス、I2ガス、ClF3ガス、およびF2ガスから選択されたものであることを特徴とする請求項3に記載の方法。
- 前記第2工程の前に、前記被処理面から酸化膜を除去する第4工程をさらに有することを特徴とする請求項1から請求項4のいずれか1項に記載の方法。
- 前記第4工程は、水素を含む物質により行われることを特徴とする請求項5に記載の方法。
- 前記第4工程は、アンモニアガスとフッ化水素ガスを用いた化学的酸化膜除去処理により行われることを特徴とする請求項6に記載の方法。
- 前記第3工程の後に、前記非晶質シリコン膜または前記非晶質ゲルマニウム膜または前記非晶質シリコンゲルマニウム膜を結晶化する第5工程をさらに有することを特徴とする請求項1から請求項7のいずれか1項に記載の方法。
- 前記第5工程は、真空引きまたはアニールにより行われることを特徴とする請求項8に記載の方法。
- 前記第5工程は、前記第3工程の後、in−situで行われることを特徴とする請求項8または請求項9に記載の方法。
- 被処理面として単結晶シリコンまたは単結晶ゲルマニウムまたは単結晶シリコンゲルマニウムを有する被処理体の前記被処理面上に、シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する装置であって、
前記被処理体を収容する処理容器と、
前記処理容器内に、シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜するための原料ガス、およびハロゲン元素含有ガス、および不活性ガスを供給するガス供給機構と、
前記被処理体を加熱する加熱装置と、
前記処理容器内を排気する排気装置と、
前記ガス供給機構、前記加熱装置、および前記排気装置を制御する制御部と
を備え、
前記制御部は、前記被処理体が前記処理容器内に配置された状態で、前記排気装置および前記加熱装置により前記処理容器内の圧力および温度を制御しつつ、前記ガス供給機構から前記処理容器内に前記ハロゲン元素含有ガスを供給させて前記被処理体の被処理面にハロゲン元素を吸着させ、次いで、前記ガス供給機構から前記被処理体に前記原料ガスを供給させて、前記被処理体の前記被処理面上に非晶質シリコン膜または非晶質ゲルマニウム膜または非晶質シリコンゲルマニウム膜を成膜させるように制御することを特徴とする装置。 - 前記制御部は、前記被処理体の前記被処理面上に非晶質シリコン膜または非晶質ゲルマニウム膜または非晶質シリコンゲルマニウム膜を成膜させた後、前記処理容器内を前記排気装置により真空引きさせるか、または、前記処理容器内で前記加熱装置により前記被処理体をアニール処理させることにより、前記非晶質シリコン膜または前記非晶質ゲルマニウム膜または前記非晶質シリコンゲルマニウム膜を結晶化するように制御することを特徴とする請求項11に記載の装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018030576A JP6952620B2 (ja) | 2018-02-23 | 2018-02-23 | シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 |
KR1020190018494A KR102372135B1 (ko) | 2018-02-23 | 2019-02-18 | 실리콘막 또는 게르마늄막 또는 실리콘 게르마늄막을 성막하는 방법 및 장치 |
TW108105543A TWI758587B (zh) | 2018-02-23 | 2019-02-20 | 矽膜、鍺膜或矽鍺膜之成膜方法及裝置 |
US16/283,138 US20190267236A1 (en) | 2018-02-23 | 2019-02-22 | Method and apparatus for forming silicon film, germanium film, or silicon germanium film |
CN201910132739.0A CN110189983B (zh) | 2018-02-23 | 2019-02-22 | 对硅膜或锗膜或硅锗膜进行成膜的方法和装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018030576A JP6952620B2 (ja) | 2018-02-23 | 2018-02-23 | シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019145735A JP2019145735A (ja) | 2019-08-29 |
JP6952620B2 true JP6952620B2 (ja) | 2021-10-20 |
Family
ID=67684031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018030576A Active JP6952620B2 (ja) | 2018-02-23 | 2018-02-23 | シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190267236A1 (ja) |
JP (1) | JP6952620B2 (ja) |
KR (1) | KR102372135B1 (ja) |
CN (1) | CN110189983B (ja) |
TW (1) | TWI758587B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023531410A (ja) | 2020-06-17 | 2023-07-24 | アプライド マテリアルズ インコーポレイテッド | ドープ層によるゲート界面エンジニアリング |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3486069B2 (ja) * | 1997-03-14 | 2004-01-13 | 株式会社東芝 | 半導体装置の製造方法 |
JP5015440B2 (ja) * | 2005-09-29 | 2012-08-29 | 株式会社デンソー | 半導体基板の製造方法 |
WO2009011303A1 (ja) * | 2007-07-13 | 2009-01-22 | Canon Anelva Corporation | Si層凝集抑制方法、半導体装置の製造方法及び真空処理装置 |
JP5023004B2 (ja) * | 2008-06-30 | 2012-09-12 | 株式会社日立国際電気 | 基板処理方法及び基板処理装置 |
US9548378B2 (en) * | 2012-02-09 | 2017-01-17 | GlobalFoundries, Inc. | Epitaxial channel formation methods and structures |
JP6258813B2 (ja) * | 2014-08-12 | 2018-01-10 | 東京エレクトロン株式会社 | ゲルマニウム膜の成膜方法および成膜装置 |
JP6247181B2 (ja) * | 2014-09-05 | 2017-12-13 | 東京エレクトロン株式会社 | シリコン又はゲルマニウム又はシリコンゲルマニウム膜の成膜方法および成膜装置 |
US10177002B2 (en) * | 2016-04-29 | 2019-01-08 | Applied Materials, Inc. | Methods for chemical etching of silicon |
-
2018
- 2018-02-23 JP JP2018030576A patent/JP6952620B2/ja active Active
-
2019
- 2019-02-18 KR KR1020190018494A patent/KR102372135B1/ko active IP Right Grant
- 2019-02-20 TW TW108105543A patent/TWI758587B/zh active
- 2019-02-22 US US16/283,138 patent/US20190267236A1/en not_active Abandoned
- 2019-02-22 CN CN201910132739.0A patent/CN110189983B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR102372135B1 (ko) | 2022-03-08 |
JP2019145735A (ja) | 2019-08-29 |
US20190267236A1 (en) | 2019-08-29 |
TWI758587B (zh) | 2022-03-21 |
CN110189983B (zh) | 2023-10-31 |
CN110189983A (zh) | 2019-08-30 |
TW201936964A (zh) | 2019-09-16 |
KR20190101880A (ko) | 2019-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101630748B1 (ko) | 박막의 형성 방법 및 성막 장치 | |
US8445389B2 (en) | Etchant treatment processes for substrate surfaces and chamber surfaces | |
US7462239B2 (en) | Low temperature load and bake | |
US7651948B2 (en) | Pre-cleaning of substrates in epitaxy chambers | |
KR101074186B1 (ko) | 에피택셜 필름 형성을 위한 클러스터 툴 | |
US7029995B2 (en) | Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy | |
US11615986B2 (en) | Methods and apparatus for metal silicide deposition | |
WO2013106411A1 (en) | Methods for depositing group iii-v layers on substrates | |
JP6952620B2 (ja) | シリコン膜またはゲルマニウム膜またはシリコンゲルマニウム膜を成膜する方法および装置 | |
WO2008013032A1 (fr) | Procédé de fabrication d'un substrat semi-conducteur | |
KR101763363B1 (ko) | 에피택시 전의 인 시츄 프리 클린 | |
US9966256B2 (en) | Film forming method and film forming apparatus | |
JP4490760B2 (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP2987926B2 (ja) | 気相成長方法 | |
JP6829495B2 (ja) | 低温エピタキシャル層の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200923 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210826 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210831 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210928 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6952620 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |