JP6946432B2 - 回転防止レンズ及びその調整方法並びにマルチビーム装置 - Google Patents

回転防止レンズ及びその調整方法並びにマルチビーム装置 Download PDF

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JP6946432B2
JP6946432B2 JP2019530771A JP2019530771A JP6946432B2 JP 6946432 B2 JP6946432 B2 JP 6946432B2 JP 2019530771 A JP2019530771 A JP 2019530771A JP 2019530771 A JP2019530771 A JP 2019530771A JP 6946432 B2 JP6946432 B2 JP 6946432B2
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lens
rotation
magnetic field
beamlet
magnetic
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JP2020503644A (ja
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レン,ウェイミン
リウ,シュエドン
フー,シュエラン
チェン,ゾンウェイ
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ASML Netherlands BV
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Priority to JP2022151436A priority patent/JP7427740B2/ja
Priority to JP2024008438A priority patent/JP2024028581A/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/14Lenses magnetic
    • H01J37/141Electromagnetic lenses
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/145Combinations of electrostatic and magnetic lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • H01J2237/0451Diaphragms with fixed aperture
    • H01J2237/0453Diaphragms with fixed aperture multiple apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21Focus adjustment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2019530771A 2016-12-30 2017-12-22 回転防止レンズ及びその調整方法並びにマルチビーム装置 Active JP6946432B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021150383A JP7148692B2 (ja) 2016-12-30 2021-09-15 複数の荷電粒子ビームを使用する装置
JP2022151436A JP7427740B2 (ja) 2016-12-30 2022-09-22 複数の荷電粒子ビームを使用する装置
JP2024008438A JP2024028581A (ja) 2016-12-30 2024-01-24 複数の荷電粒子ビームを使用する装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662440493P 2016-12-30 2016-12-30
US62/440,493 2016-12-30
PCT/EP2017/084429 WO2018122176A1 (en) 2016-12-30 2017-12-22 An apparatus using multiple charged particle beams

Related Child Applications (1)

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JP2021150383A Division JP7148692B2 (ja) 2016-12-30 2021-09-15 複数の荷電粒子ビームを使用する装置

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JP2020503644A JP2020503644A (ja) 2020-01-30
JP6946432B2 true JP6946432B2 (ja) 2021-10-06

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JP2019530771A Active JP6946432B2 (ja) 2016-12-30 2017-12-22 回転防止レンズ及びその調整方法並びにマルチビーム装置
JP2021150383A Active JP7148692B2 (ja) 2016-12-30 2021-09-15 複数の荷電粒子ビームを使用する装置
JP2022151436A Active JP7427740B2 (ja) 2016-12-30 2022-09-22 複数の荷電粒子ビームを使用する装置
JP2024008438A Pending JP2024028581A (ja) 2016-12-30 2024-01-24 複数の荷電粒子ビームを使用する装置

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JP2021150383A Active JP7148692B2 (ja) 2016-12-30 2021-09-15 複数の荷電粒子ビームを使用する装置
JP2022151436A Active JP7427740B2 (ja) 2016-12-30 2022-09-22 複数の荷電粒子ビームを使用する装置
JP2024008438A Pending JP2024028581A (ja) 2016-12-30 2024-01-24 複数の荷電粒子ビームを使用する装置

Country Status (8)

Country Link
US (2) US11062874B2 (ko)
EP (2) EP4250334A3 (ko)
JP (4) JP6946432B2 (ko)
KR (3) KR102392700B1 (ko)
CN (2) CN116313708A (ko)
IL (1) IL267670A (ko)
TW (4) TWI684197B (ko)
WO (1) WO2018122176A1 (ko)

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KR102480232B1 (ko) * 2016-01-27 2022-12-22 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔들의 장치
US11289304B2 (en) 2017-04-28 2022-03-29 Asml Netherlands B.V. Apparatus using multiple beams of charged particles
KR102505631B1 (ko) 2017-09-07 2023-03-06 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔에 의한 샘플 검사 방법
JP7053805B2 (ja) 2017-09-29 2022-04-12 エーエスエムエル ネザーランズ ビー.ブイ. 複数の荷電粒子ビームを用いてサンプルを検査する方法
KR102444511B1 (ko) 2017-09-29 2022-09-19 에이에스엠엘 네델란즈 비.브이. 샘플 검사에서 이미지 콘트라스트 향상
DE102018202428B3 (de) * 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
WO2019166331A2 (en) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
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WO2020030483A1 (en) * 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
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WO2020099095A1 (en) 2018-11-16 2020-05-22 Asml Netherlands B.V. Electromagnetic compound lens and charged particle optical system with such a lens
WO2020135963A1 (en) * 2018-12-28 2020-07-02 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
EP3948922A1 (en) 2019-03-29 2022-02-09 ASML Netherlands B.V. Multi-beam inspection apparatus with single-beam mode
EP3977501A1 (en) * 2019-05-28 2022-04-06 ASML Netherlands B.V. Multiple charged-particle beam apparatus
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
WO2021104991A1 (en) 2019-11-28 2021-06-03 Asml Netherlands B.V. Multi-source charged particle illumination apparatus
WO2022023232A1 (en) * 2020-07-29 2022-02-03 Asml Netherlands B.V. Systems and methods for signal electron detection in an inspection apparatus
TWI812991B (zh) * 2020-09-03 2023-08-21 荷蘭商Asml荷蘭公司 帶電粒子系統及操作帶電粒子系統之方法
WO2022063540A1 (en) * 2020-09-22 2022-03-31 Asml Netherlands B.V. Anti-scanning operation mode of secondary-electron projection imaging system for apparatus with plurality of beamlets
US20240079204A1 (en) 2020-12-24 2024-03-07 Asml Netherlands B.V. Operation methods of 2d pixelated detector for an apparatus with plural charged-particle beams and mapping surface potentials
WO2023160959A1 (en) 2022-02-23 2023-08-31 Asml Netherlands B.V. Beam manipulation using charge regulator in a charged particle system
EP4266347A1 (en) 2022-04-19 2023-10-25 ASML Netherlands B.V. Method of filtering false positives for a pixelated electron detector
JP2023172433A (ja) * 2022-05-24 2023-12-06 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置及びマルチ荷電粒子ビーム照射方法
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Also Published As

Publication number Publication date
EP4250334A3 (en) 2023-12-06
JP7148692B2 (ja) 2022-10-05
KR20230140601A (ko) 2023-10-06
JP2022000858A (ja) 2022-01-04
US20220005665A1 (en) 2022-01-06
JP2024028581A (ja) 2024-03-04
EP3563400A1 (en) 2019-11-06
KR20220054914A (ko) 2022-05-03
CN110352469B (zh) 2023-05-02
WO2018122176A1 (en) 2018-07-05
TWI748319B (zh) 2021-12-01
TWI684197B (zh) 2020-02-01
IL267670A (en) 2019-08-29
KR102581991B1 (ko) 2023-09-22
KR20190099316A (ko) 2019-08-26
CN116313708A (zh) 2023-06-23
TW202345189A (zh) 2023-11-16
EP4250334A2 (en) 2023-09-27
US20190333732A1 (en) 2019-10-31
US11062874B2 (en) 2021-07-13
TWI795054B (zh) 2023-03-01
TW202030760A (zh) 2020-08-16
TWI829519B (zh) 2024-01-11
KR102392700B1 (ko) 2022-04-29
TW202232554A (zh) 2022-08-16
TW201841186A (zh) 2018-11-16
CN110352469A (zh) 2019-10-18
JP7427740B2 (ja) 2024-02-05
JP2022174308A (ja) 2022-11-22
JP2020503644A (ja) 2020-01-30

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