JP6935829B2 - Manufacturing method of base material for metal mask, manufacturing method of metal mask for vapor deposition, manufacturing method of metal mask unit, and metal mask unit - Google Patents

Description

The present invention relates to a method for producing a base material for a metal mask, a method for producing a metal mask for vapor deposition, a method for producing a metal mask unit, and a metal mask unit.

An organic EL display is known as one of display devices manufactured by using a vapor deposition method. The organic layer included in the organic EL display is a deposit of organic molecules sublimated in the vapor deposition process. The mask hole of the metal mask used in the vapor deposition step is a passage through which sublimated organic molecules pass, and has a shape corresponding to the shape of a pixel in an organic EL display (see, for example, Patent Document 1). ..

JP-A-2007-95411

By the way, with the progress of high definition of display devices, the above-mentioned organic EL display, and by extension, the metal mask that determines the pixel size, is desired to have high definition for film formation using the metal mask. There is.

In order to improve the definition of film formation using a metal mask, it is necessary to increase the density of mask holes possessed by the metal mask. The mask holes of the metal mask are usually formed by etching the base material for the metal mask. The thicker the base material for the metal mask, the larger the amount of the mask holes etched so that the width orthogonal to the extending direction of the mask holes increases. Therefore, in forming the mask holes of the metal mask at high density, It is preferable to make the base material for the metal mask thin.

However, when the metal mask base material is thinned, the strength of the metal mask formed by using the metal mask base material may be reduced. Therefore, there is a demand for a metal mask that can achieve both high definition of film formation using a metal mask and suppression of a decrease in the strength of the metal mask.

It should be noted that these matters are not limited to metal masks for vapor deposition used in the manufacture of display devices including organic EL displays, but are used for forming wirings provided in various devices and vapor deposition used for vapor deposition of functional layers provided in various devices. It is also common to metal masks for use.

The present invention is a method for producing a metal mask base material and a method for producing a metal mask for vapor deposition, which makes it possible to suppress a decrease in strength of the metal mask for vapor deposition while improving the definition of film formation using the metal mask for vapor deposition. , A method of manufacturing a metal mask unit, and an object of the present invention.

A method for manufacturing a base material for a metal mask for solving the above problems includes a mask region for collectively performing vapor deposition for a plurality of panels, each having a plurality of pixels, and a metal mask for vapor deposition other than the mask region. This is a method for producing a metal mask base material having a single sheet of metal for forming a metal mask for vapor deposition including a peripheral region which is a region of the above. As the base material for a metal mask, a metal sheet having a front surface and a back surface opposite to the front surface is prepared, and n pieces (n is an integer of 1 or more) partitioned on the front surface are prepared. The metal sheet is provided with the above-mentioned mask region and n said peripheral regions which are regions other than the mask region on the surface. The thickness of the mask region is thinner than the thickness of the peripheral region, the mask region does not have a plurality of mask holes for forming the plurality of pixels, and the mask region is directed from the back surface to the front surface. This is a region whose height position is lower than the peripheral region.

A method for manufacturing a thin-film metal mask for solving the above problems includes a mask area for collectively performing thin-film deposition for a plurality of panels, each of which has a plurality of pixels, and a metal mask for thin-film deposition other than the mask area. This is a method for producing a metal mask for vapor deposition having a single sheet of metal having a peripheral region which is a region. A plurality of mask regions penetrating the mask region along the thickness direction with respect to the mask region partitioned on the front surface of the metal mask base material including a front surface and a back surface which is a surface opposite to the front surface. It comprises forming a mask hole of. The peripheral region is a region other than the mask region on the surface. The thickness of the mask region is thinner than the thickness of the peripheral region, and the mask region is a region in which the height position from the back surface to the front surface is lower than that of the peripheral region. The surface has a step between a portion of the mask region outside the portion where the plurality of mask holes are formed and the peripheral region.

The method for manufacturing the metal mask unit for solving the above problems includes manufacturing the metal mask for thin film deposition by the method for manufacturing the metal mask for thin film deposition, and supporting the metal mask for thin film deposition by a support member. ..

The metal mask unit for solving the above problems includes a metal mask for vapor deposition and a support member for supporting the metal mask for vapor deposition. The vapor deposition metal mask includes a mask region for collectively performing vapor deposition for a plurality of panels, each having a plurality of pixels, and a peripheral region which is a region other than the mask region in the vapor deposition metal mask. It has a single sheet of metal, with a front surface and a back surface that is the opposite side of the surface, the mask area being partitioned on the surface and the mask area along the thickness direction. The peripheral region is a region other than the mask region on the surface, the thickness of the mask region is thinner than the thickness of the peripheral region, and the mask region is The height position from the back surface to the front surface is a region lower than the peripheral region, and the front surface includes a portion of the mask region outside the portion where the plurality of mask holes are formed and the portion. It has a step with the surrounding area.

According to each of the above configurations, as compared with the metal mask base material having a uniform thickness, it is possible to suppress a decrease in strength of the metal mask for vapor deposition due to the peripheral region, and the opening is higher than that of the mask region. Can be formed to a density. Therefore, it is possible to suppress a decrease in the strength of the thin-film deposition metal mask while improving the definition of the film formation using the thin-film deposition metal mask.

In the method for manufacturing a base material for a metal mask, the extending direction of the base material for a metal mask is the first direction, and the direction orthogonal to the first direction is the second direction. The mask region is composed of a plurality of mask region elements arranged at predetermined intervals along each of the first direction and the second direction, and the peripheral region preferably has a grid pattern on the surface. ..

According to the above configuration, since each mask region is surrounded by a peripheral region, the strength of the metal mask for vapor deposition is increased in the circumferential direction of the mask region.

In the method for manufacturing a base material for a metal mask, the extending direction of the base material for a metal mask is the first direction, and the direction orthogonal to the first direction is the second direction. The mask region extends along the second direction and is composed of a plurality of mask region elements arranged at intervals in the first direction, and the peripheral region extends along the second direction and is described as described above. It is preferably composed of a plurality of peripheral region elements arranged at intervals in the first direction, and the mask region element and the peripheral region element are preferably arranged alternately in the first direction.

According to the above configuration, since the peripheral region elements extend along the second direction, when the metal mask base material is wound around the winding core in the manufacture of the metal mask for vapor deposition, each peripheral region element is wound in the circumferential direction of the winding core. Is less likely to overlap with other peripheral region elements, and it is possible to suppress unwinding of the metal mask base material with respect to the winding core.

In the method for producing a base material for a metal mask, it is preferable that the portion connected to the mask region in the peripheral region is an inclined region having a thinner thickness as the portion closer to the mask region.

According to the above configuration, at the step between the mask region and the peripheral region, the thickness of the peripheral region gradually decreases toward the thickness of the mask region. Therefore, even if a dry film resist is used for etching the metal mask base material in the production of the metal mask for vapor deposition, there is a step between the mask region and the peripheral region between the dry film resist and the metal mask base material. The occurrence of gaps is suppressed. Therefore, it is possible to prevent a part of the dry film resist from peeling off from the metal mask base material while the metal mask base material is etched.

In the method for producing a base material for a metal mask, the mask region may be a region in which the height position from the front surface to the back surface is lower than the peripheral region.

According to the above configuration, since both the front surface and the back surface of the metal mask base material are stepped surfaces, the metal mask base material has a desired shape by making a mistake in the surface to be etched in the metal mask base material. It is possible to prevent it from being etched. Therefore, it is possible to suppress a decrease in the yield in the production of the metal mask for vapor deposition.

In the method for producing a base material for a metal mask, the material for forming the base material for a metal mask may be Invar.

According to the above configuration, when the film forming target in the film formation using the vapor deposition metal mask is a glass substrate, the vapor deposition metal mask and the glass substrate are compared with the vapor deposition metal mask formed of other metals or alloys. The difference in the coefficient of thermal expansion between and is small. Therefore, in the case of film formation using the thin-film deposition metal mask, even if the vapor deposition metal mask is heated, the gap between the thin-film deposition metal mask and the glass substrate is less likely to occur, and as a result, the accuracy of film formation on the glass substrate is reduced. Is kept high.

According to the present invention, it is possible to suppress a decrease in strength of a metal mask for vapor deposition while improving the definition of film formation using the metal mask for vapor deposition.

The partial plan view which shows the partial planar structure of the metal mask base material in 1st Embodiment which embodied the metal mask base material of this invention. FIG. 5 is a cross-sectional view showing a cross-sectional structure along the line I-I in FIG. The plan view which shows the planar structure of the metal mask for vapor deposition in 1st Embodiment which embodied the metal mask for vapor deposition of this invention. A partial plan view showing a part of the planar structure of the metal mask for vapor deposition. The plan view which shows the planar structure of the metal mask unit in 1st Embodiment which embodied the metal mask unit of this invention. FIG. 5 is a cross-sectional view showing a cross-sectional structure taken along line II-II in FIG. The process chart which shows the process of preparing a metal sheet in the manufacturing method of the base material for a metal mask. The process chart which shows the process of exposing the 1st dry film resist in the manufacturing method of the base material for a metal mask. The process chart which shows the process of developing the 1st dry film resist in the manufacturing method of the base material for a metal mask. The process chart which shows the process of etching a metal sheet in the manufacturing method of the base material for a metal mask. It is a process drawing which shows the process of exposing the 2nd dry film resist in the manufacturing method of the metal mask for vapor deposition. It is a process drawing which shows the process of developing the 2nd dry film resist in the manufacturing method of the metal mask for vapor deposition. The process chart which shows the process of etching the base material for a metal mask in the manufacturing method of the metal mask for vapor deposition. FIG. 5 is a cross-sectional view showing a cross-sectional structure of a base material for a metal mask in a modified example. A partial plan view showing a partial planar structure of a base material for a metal mask in a modified example. A partial plan view showing a partial planar structure of a base material for a metal mask in a modified example. A partial plan view showing a partial planar structure of a base material for a metal mask in a modified example. A partial plan view showing a partial planar structure of a base material for a metal mask in a modified example. The partial cross-sectional view which shows the partial cross-sectional structure of the metal mask base material in 2nd Embodiment which embodied the metal mask base material of this invention. The process chart which shows the process of exposing the 3rd dry film resist in the manufacturing method of the base material for a metal mask. The plan view which shows the planar structure of the 3rd mask in the plan view which faces the surface of a metal sheet. The process chart which shows the process of developing the 3rd dry film resist in the manufacturing method of the base material for a metal mask. A partial cross-sectional view showing a partial cross-sectional structure of a base material for a metal mask in a modified example. A partial cross-sectional view showing a partial cross-sectional structure of a base material for a metal mask in a modified example.

[First Embodiment]
With reference to FIGS. 1 to 13, a first embodiment embodying the metal mask base material, the metal mask for vapor deposition, and the metal mask unit of the present invention will be described. Hereinafter, a method for manufacturing a metal mask for vapor deposition, including a structure for a base material for a metal mask, a structure for a metal mask for vapor deposition, a structure for a metal mask unit, and a method for manufacturing a base material for a metal mask will be described.

In the first embodiment, as an example of the metal mask for vapor deposition and the metal mask unit, the metal mask for vapor deposition and the metal mask unit used when forming an organic layer on a panel provided in an organic EL display. Will be explained.

[Structure of base material for metal mask]
The configuration of the metal mask base material will be described with reference to FIGS. 1 and 2.

As shown in FIG. 1, the metal mask base material 10 is made of metal, and is a single sheet base material for forming a metal mask for vapor deposition including a mask region and a peripheral region that is a region other than the mask region. Is. In the metal mask for vapor deposition, the mask area is an area for collectively performing thin-film deposition for a plurality of panels, and each panel has a plurality of pixels.

The base material 10 for a metal mask includes a front surface 10S and a back surface which is a surface opposite to the front surface 10S. It includes n peripheral regions 12 which are regions. Note that n is an integer of 1 or more.

In each mask region 11, when the metal mask base material 10 is processed into a plurality of metal masks for vapor deposition, a plurality of mask holes penetrating the mask region 11 are formed along the thickness direction of the metal mask base material 10. Area to be Each mask hole is a hole through which the organic material released from the vapor deposition source is passed toward the film formation target when the organic layer is formed by using the metal mask for vapor deposition.

When the organic layer is formed, the mask region 11 can be vapor-deposited for a plurality of panels at once. The mask region 11 may be used in a state of facing one film forming object for forming a plurality of panels, or may be used in a state of facing a plurality of film forming objects corresponding to one panel. You may.

On the other hand, the peripheral region 12 is a region other than the mask region 11 in the metal mask base material 10, that is, a region in which a plurality of mask holes included in the metal mask for vapor deposition are not formed.

The extending direction of the metal mask base material 10 is the first direction D1, and the direction orthogonal to the first direction D1 is the second direction D2. In the metal mask base material 10, the n peripheral regions 12 are continuous along the first direction D1. In the metal mask base material 10, a region composed of one mask region 11 and one peripheral region 12 corresponds to one metal mask for vapor deposition.

A roll-to-roll device is used as a manufacturing device for manufacturing a metal mask for vapor deposition. The first direction D1 is a direction parallel to the transport direction in which the metal mask base material 10 is transported in the roll-to-roll device when the metal mask base material 10 is processed into a plurality of vapor deposition metal masks.

The base material 10 for a metal mask extends along the first direction D1 and has a sheet shape having a predetermined width along the second direction D2. In the metal mask base material 10, the length along the first direction D1 is significantly larger than the width along the second direction D2.

On the surface 10S, the mask region 11 is composed of a plurality of mask region elements 11a arranged at predetermined intervals along each of the first direction D1 and the second direction D2, and the peripheral region 12 has a grid pattern on the surface 10S. have.

Each mask region 11 is composed of, for example, six mask region elements 11a. In a plan view facing the surface 10S, each mask region element 11a has a quadrangular shape and is arranged at equal intervals along the X and Y directions. The plurality of mask region elements 11a are located inside the edge of the surface 10S and at a portion separated from the edge by a predetermined distance.

The peripheral region 12 has a four-sided grid shape that fills a portion of the surface 10S other than the mask region 11, and the peripheral region 12 surrounds the entire peripheral region of each mask region element 11a.

As shown in FIG. 2, the thickness of each mask region element 11a is thinner than the thickness of the peripheral region 12, and the height position of each mask region element 11a from the back surface 10R to the front surface 10S is higher than that of the peripheral region 12. Is also a low area.

According to the metal mask base material 10, the peripheral region 12 can suppress a decrease in strength of the vapor deposition metal mask as compared with the metal mask base material having a uniform thickness, and the mask region 11 The mask holes can be formed at a high density. Therefore, it is possible to suppress a decrease in the strength of the thin-film deposition metal mask while improving the definition of the film formation using the thin-film deposition metal mask.

The formation of mask holes in the metal mask base material 10 is performed by wet etching. Since wet etching is etching that proceeds isotropically in the metal mask base material 10, the thicker the metal mask base material 10, the larger the etching amount for penetrating the metal mask base material 10. Therefore, on the premise that the minimum width of the mask hole is a predetermined size in the direction orthogonal to the direction in which the mask hole extends, the width other than the minimum width becomes large in the mask hole.

In this respect, according to the metal mask base material 10, the thickness in the mask region 11 is thinner than the thickness in the peripheral region 12. Therefore, the width other than the minimum width is smaller than the configuration in which the entire metal mask base material 10 has the same thickness as the peripheral region 12, and the mask holes can be formed at a high density.

On the other hand, in the metal mask base material 10, the thinner the metal mask base material 10, the stronger the metal mask base material 10, and by extension, the strength of the vapor deposition metal mask formed by using the metal mask base material 10. Will be low.

In this respect, according to the metal mask base material 10, since the thickness in the peripheral region 12 is thicker than the thickness in the mask region 11, the entire metal mask base material 10 has the same thickness as the mask region 11. Compared with this, it is possible to suppress a decrease in the strength of the metal mask for vapor deposition.

As described above, the peripheral region 12 has a grid pattern in a plan view facing the surface 10S. Therefore, the strength of the metal mask for vapor deposition is increased in the circumferential direction of the mask region 11 by surrounding each mask region 11 with the peripheral region 12.

In the metal mask base material 10, the thickness T1 of the mask region 11 is preferably 10 μm or more and 35 μm or less, and the thickness T2 of the peripheral region 12 is preferably 15 μm or more and 40 μm or less, for example. The difference between the thickness T1 of the mask region 11 and the thickness T2 of the peripheral region 12 is the step (T2-T1), and the step (T2-T1) is preferably, for example, 2 μm or more and 5 μm or less.

When the thickness T1 of the mask region 11 is 10 μm or more and 35 μm or less, a metal mask for vapor deposition capable of forming an organic layer corresponding to an organic EL display of 250 ppi or more and 700 ppi or less can be formed.

The thickness T2 of the peripheral region 12 is substantially constant over the entire peripheral region 12, and the thickness T1 of each mask region 11 is substantially constant over the entire mask region 11.

The material for forming the base material 10 for the metal mask is preferably Invar. Invar is a nickel ferroalloy alloy containing 36% by weight nickel. The coefficient of thermal expansion of Invar, that is, the coefficient of thermal expansion of the metal mask base material 10 ^{is about 1.2 × 10 -6} / ° C.

When forming an organic layer using a metal mask for vapor deposition, the difference between the coefficient of thermal expansion of the object to be deposited and the coefficient of thermal expansion of the metal mask for vapor deposition is small in order to improve the accuracy of film formation on the film-deposited object. Is preferable.

If the target of film formation in the film formation using the metal mask for vapor deposition is a glass substrate, the material for forming the base material 10 for the metal mask is Invar, so that the metal mask for vapor deposition formed of another metal or alloy can be used. In comparison, the difference in the coefficient of thermal expansion between the metal mask for vapor deposition and the glass substrate is smaller. Therefore, even if the metal mask for vapor deposition and the glass substrate are heated during the film formation using the metal mask for vapor deposition, the gap between the metal mask for vapor deposition and the glass substrate is less likely to occur, and as a result, the glass substrate is formed. The accuracy of the film is kept high.

[Structure of metal mask for vapor deposition]
The configuration of the metal mask for vapor deposition will be described with reference to FIGS. 3 and 4. In FIG. 3, dots are added to the mask region of the vapor deposition metal mask for the convenience of illustrating the plurality of mask holes of the vapor deposition metal mask.

As shown in FIG. 3, the vapor deposition metal mask 20 is made of metal and includes a front surface 20S and a back surface which is a surface opposite to the surface 20S. The vapor deposition metal mask 20 includes a mask region 21 partitioned by a step on the surface 20S, and a peripheral region 22 which is a region other than the mask region 21 on the surface 20S. Each mask region 21 has a plurality of mask holes penetrating the vapor deposition metal mask 20 along the thickness direction. The mask area 21 is composed of a plurality of mask area elements 21a.

In the metal mask 20 for vapor deposition, the surface 20S corresponds to a part of the surface 10S of the metal mask base material 10, and each mask area 21 corresponds to one mask area 11 in the metal mask base material 10. Each mask region element 21a corresponds to one mask region element 11a of the metal mask base material 10. The peripheral area 22 corresponds to one peripheral area 12.

In the thin-film deposition metal mask 20, the thickness of the mask region 21 is thinner than the thickness of the peripheral region 22, and the mask region 21 is a region where the height position from the back surface to the front surface 20S is lower than that of the peripheral region 22. be.

According to such a metal mask 20 for thin film deposition, since the metal mask 20 for thin film deposition includes a mask region 21 and a peripheral region 22, the metal mask 20 for thin film deposition can be formed with high definition while using the metal mask 20 for thin film deposition. The decrease in strength is suppressed.

FIG. 4 shows a planar structure in which each mask region element 21a is viewed from the back surface.
As shown in FIG. 4, each mask region element 21a has a plurality of mask holes 23. In a plan view facing the back surface 20R of the metal mask 20 for vapor deposition, each mask hole 23 partitions a rectangular region extending along the first direction D1.

The plurality of mask holes 23 are arranged in a staggered pattern on the back surface 20R. That is, a plurality of mask holes 23 arranged along the first direction D1 form one row, and the plurality of mask holes 23 are arranged at a predetermined pitch in the first direction D1. Then, in the plurality of mask holes 23 constituting each row, the positions in the first direction D1 overlap each other in every other row.

On the other hand, in rows adjacent to each other in the second direction D2, the positions in the first direction D1 in the plurality of mask holes 23 forming one row are relative to the positions in the plurality of mask holes 23 forming the other row. The position in one direction D1 is deviated by about 1/2 pitch.

[Structure of metal mask unit]
The configuration of the metal mask unit will be described with reference to FIGS. 5 and 6. In FIG. 5, dots are added to the mask region of the vapor deposition metal mask for the convenience of illustrating the plurality of mask holes of the vapor deposition metal mask. Further, in FIG. 6, the illustration of the plurality of mask holes is omitted from the convenience of the illustration.

As shown in FIG. 5, the metal mask unit 30 includes a metal mask 20 for vapor deposition, a support member 31, and a fastening member 32.

The thin-film deposition metal mask 20 is the above-mentioned thin-film deposition metal mask 20, and has a mask region 21 and a peripheral region 22 other than the mask region 21 on the surface 20S. The peripheral region 22 includes an edge portion 22a located at the edge of the surface 20S, and the edge portion 22a is located entirely on the edge of the surface 20S.

As shown in FIG. 6, the edge portion 22a has a plurality of mask-side through holes 22b penetrating the edge portion 22a along the thickness direction. The plurality of mask-side through holes 22b are arranged at predetermined intervals in the portion of the edge portion 22a extending along the first direction D1.

The support member 31 supports the thin-film deposition metal mask 20 by overlapping the edge portion 22a in a plan view facing the surface 20S. The support member 31 has a plurality of support-side through-holes 31a located so as to overlap each mask-side through-hole 22b one by one.

The support member 31 is made of metal and has a rectangular frame shape in a plan view facing the surface 20S. When the metal mask 20 for vapor deposition is made of Invar, it is preferable that the support member 31 is also made of Invar. The thickness of the support member 31 is, for example, 100 μm, and the thickness of the support member 31 is 100 μm, so that the strength of the support member 31 is preferably large so that the support member 31 can support the metal mask 20 for vapor deposition. Become.

The edge of the support member 31 is located outside the edge of the surface 20S over the entire circumferential direction of the surface 20S. The support member 31 has an opening 31b, and in a plan view facing the surface 20S, the opening 31b overlaps all the mask region elements 21a. The plurality of support-side through holes 31a are arranged at predetermined intervals along a portion extending along the first direction D1 around the opening 31b in a plan view facing the surface 20S.

Each fastening member 32 passes through one mask-side through hole 22b and a support-side through-hole 31a that overlaps the mask-side through-hole 22b in a plan view facing the surface 20S, and the metal mask 20 for vapor deposition and the support member 31. And have been concluded.

Each fastening member 32 may be a member configured to fasten the metal mask 20 for vapor deposition and the support member 31 by passing through the mask side through hole 22b and the support side through hole 31a. Each of the mask-side through hole 22b and the support-side through hole 31a is a hole for positioning the vapor deposition metal mask 20 with respect to the support member 31.

Since the vapor deposition metal mask 20 has a mask-side through hole 22b in the edge portion 22a through which the fastening member 32 for fastening the vapor deposition metal mask 20 and the support member 31 passes, the metal mask 20 for vapor deposition is fastened to the vapor deposition metal mask 20. By forming the through holes of the above, it is possible to prevent the strength of the metal mask 20 for vapor deposition from being lowered.

When the metal mask unit 30 is used for vapor deposition for a plurality of panels, the metal mask unit 30 is used with the back surface 20R of the metal mask 20 for vapor deposition facing the film forming target.

[Manufacturing method of metal mask for vapor deposition]
A method for manufacturing the metal mask 20 for vapor deposition will be described with reference to FIGS. 7 to 13. In the following, with reference to FIGS. 7 to 10, a method for manufacturing the metal mask base material 10 used for manufacturing the metal mask 20 for vapor deposition will be described, and then with reference to FIGS. 11 to 13, the metal A method for manufacturing the metal mask 20 for vapor deposition using the mask base material 10 will be described. 8 and 9 are process diagrams corresponding to the cross sections taken along the lines III-III in FIG. 7, and FIGS. 11 to 13 are process diagrams corresponding to the region A in FIG.

As shown in FIG. 7, when manufacturing the metal mask base material 10, first, the metal sheet 40 is prepared. The metal sheet 40 is preferably a metal sheet 40 made of Invar. The metal sheet 40 is a rolled metal sheet formed to have a predetermined thickness by, for example, rolling a metal base material. The thickness of the metal sheet 40 is, for example, 15 μm or more and 40 μm or less.

The metal sheet 40 has a surface 40S, and includes a plurality of mask compartments 41 virtually partitioned on the surface 40S, and peripheral compartments 42 that are regions other than the mask compartments 41. Each mask compartment 41 corresponds to one mask region element 11a in the metal mask substrate 10, and the peripheral compartment 42 corresponds to n peripheral regions 12 in the metal mask substrate 10.

As shown in FIG. 8, the first dry film resist DR1 is attached to the entire surface 40S of the metal sheet 40, and the surface of the first dry film resist DR1 opposite to the surface in contact with the metal sheet 40 is formed. Place the first mask M1. Then, the first dry film resist DR1 is exposed using the first mask M1.

The material for forming the first dry film resist DR1 is, for example, a negative type resist material. The first mask M1 includes a plurality of shielding portions M1a and a transmitting portion M1b which is a portion other than the shielding portion M1a in a plan view facing the surface 40S of the metal sheet 40. The shielding portion M1a shields the exposure light to the first dry film resist DR1, and the transmitting portion M1b transmits the exposure light.

In a plan view facing the surface 40S of the metal sheet 40, the mask section 41 is located at a portion of the metal sheet 40 that overlaps with each shielding portion M1a, and the peripheral section 42 is located at a position that overlaps with the transmitting portion M1b.

As shown in FIG. 9, the first dry film resist DR1 after exposure is developed to form the first resist pattern RP1. In a plan view facing the surface 40S of the metal sheet 40, the portion of the metal sheet 40 that overlaps with the first resist pattern RP1 is the peripheral partition 42.

As shown in FIG. 10, the metal sheet 40 is etched using the first resist pattern RP1. When the metal sheet 40 is made of Invar, for example, an aqueous ferric chloride solution is used for etching the metal sheet 40.

As a result, the metal mask base material 10 having the surface 10S and having n mask regions 11 and n peripheral regions 12 partitioned by steps on the surface 10S is obtained. be able to.

As shown in FIG. 11, when the metal mask 20 for vapor deposition is manufactured using the metal mask base material 10, first, the second dry film resist DR2 is attached to the surface 10S of the metal mask base material 10. Then, the second mask M2 is placed on the surface of the second dry film resist DR2 opposite to the surface in contact with the metal mask base material 10, and the second dry film resist DR2 is exposed using the second mask M2. do. The material for forming the second dry film resist DR2 is, for example, a negative type resist material as in the case of the first dry film resist DR1.

The second mask M2 includes a plurality of shielding portions M2a and a transmitting portion M2b which is a portion other than the shielding portion M2a. The shielding portion M2a shields the exposure light of the second dry film resist DR2, and the transmitting portion M2b transmits the exposure light.

In the direction in which the second mask M2 and the metal mask base material 10 overlap, a through hole penetrating the metal mask base material 10 is located at a position overlapping each shielding portion M2a in the metal mask base material 10.

As described above, the step (T2-T1) between the mask region 11 and the peripheral region 12 is preferably 2 μm or more and 5 μm or less. By including the step (T2-T1) in such a range, even if the surface 10S of the metal mask base material 10 is a step surface, the surface of the second dry film resist DR2 and the metal mask base material 10 is in the step. It is possible to prevent the gap between the 10S and the 10S from becoming excessively large.

The thickness of the second dry film resist DR2 is preferably, for example, 5 μm or more and 20 μm or less.

When the second dry film resist DR2 is attached to the metal mask base material 10, the second dry film resist DR2 is pressed against the metal mask base material 10 by a roll. At this time, due to the flexibility of the second dry film resist DR2, the step (T2-T1) in the metal mask base material 10 is absorbed. Therefore, the surface of the second dry film resist DR2 on the side opposite to the surface in contact with the metal mask base material 10 becomes substantially flat. Therefore, the exposure of the second dry film resist DR2 can be performed with the second mask M2 in close contact with the second dry film resist DR2.

As shown in FIG. 12, the second dry film resist DR2 after exposure is developed to form the second resist pattern RP2. A through hole is formed in the mask region 11 at a position overlapping the opening RP2a of the second resist pattern RP2.

As shown in FIG. 13, the metal mask base material 10 is etched using the second resist pattern RP2. When the metal mask base material 10 is made of Invar, for example, an aqueous ferric chloride solution is used for etching the metal mask base material 10.

As a result, a plurality of through holes 13 penetrating the metal mask base material 10 are formed along the thickness direction of the metal mask base material 10. In the through hole 13, the width along the second direction D2 is the smallest in the back surface 10R, and gradually increases in the direction from the back surface 10R to the front surface 10S.

Then, the second resist pattern RP2 is removed from the metal mask base material 10, and a part of the metal mask base material 10 has a predetermined shape from the metal mask base material 10 along the second direction D2. By separating, the metal mask 20 for vapor deposition described above with reference to FIG. 3 can be obtained.

As described above, according to the first embodiment of the metal mask base material, the metal mask for vapor deposition, and the metal mask unit, the effects listed below can be obtained.

(1) Compared with the metal mask base material 10 having a uniform thickness, the peripheral region 12 can suppress a decrease in strength in the vapor deposition metal mask 20, and the mask hole 23 with respect to the mask region 11 Can be formed at high density. Therefore, it is possible to suppress a decrease in the strength of the vapor deposition metal mask 20 while improving the definition of the film formation using the vapor deposition metal mask 20.

(2) Since each mask region element 11a is surrounded by the peripheral region 12, the strength of the vapor deposition metal mask 20 is increased in the circumferential direction of each mask region element 11a.

(3) If the base material 10 for the metal mask is made of Invar, the accuracy of film formation on the glass substrate is maintained high.

(4) Since the vapor deposition metal mask 20 has a mask-side through hole 22b in the edge portion 22a through which the fastening member 32 for fastening the vapor deposition metal mask 20 and the support member 31 passes, the vapor deposition metal mask 20 has a hole 22b. By forming the through holes for fastening, it is possible to prevent the strength of the metal mask 20 for vapor deposition from being lowered.

[Modified example of the first embodiment]
The above-described first embodiment can be modified as appropriate and implemented as follows.
The material for forming the metal sheet 40, and thus the base material 10 for the metal mask and the metal mask 20 for vapor deposition may be a metal other than Invar, for example, a nickel-iron alloy, which is different from Invar. It may be an alloy containing nickel and iron in proportion. Alternatively, the material for forming the metal sheet 40 may be a metal other than nickel and iron, or may be an alloy containing two or more kinds of metals other than nickel and iron.

As shown in FIG. 14, in the metal mask base material 50, in addition to the height position from the back surface 50R to the front surface 50S, the height position from the front surface 50S to the back surface 50R is the peripheral region. The region may be lower than 52. That is, each mask region element 51a may have a height position from the front surface 50S to the back surface 50R lower than the peripheral region 52 in addition to the height position from the back surface 50R to the front surface 50S.

According to such a configuration, the effects described below can be obtained.
(5) Since both the front surface 50S and the back surface 50R of the metal mask base material 50 are stepped surfaces, the metal mask base material 50 is desired by making a mistake in the surface to be etched in the metal mask base material 50. It is possible to prevent it from being etched into the shape of. Therefore, it is possible to suppress a decrease in the yield in the production of the metal mask 20 for vapor deposition.

(6) By etching both the front surface 50S and the back surface 50R of the metal mask base material 50, the thickness of the metal mask base material 50 can be made thinner, and as a result, the metal mask base material 50 can be made thinner. It is also possible to improve the definition of the metal mask for vapor deposition using 50.

Each mask region element 11a may have a polygonal shape or a circular shape other than a quadrangular shape in a plan view facing the surface 10S. Further, at least one of the distance between the mask region elements 11a in the first direction D1 and the distance between the mask region elements 11a in the second direction D2 may include two or more different values. Even with such a configuration, as long as the metal mask base material 10 includes the mask region 11 and the peripheral region 12, the same effect as (1) described above can be obtained.

As shown in FIG. 15, on the surface 60S of the metal mask base material 60, the mask region 61 extends along the second direction D2 and has a plurality of mask region elements 61a arranged at intervals in the first direction D1. It may be composed of. The peripheral region 62 may extend along the second direction D2 and may be composed of a plurality of peripheral region elements 62a arranged at intervals in the first direction D1. Then, the mask region element 61a and the peripheral region element 62a may be arranged alternately in the first direction D1. That is, in the vapor deposition metal mask formed by using the metal mask base material 60, the peripheral region element may be located only on a part of the surface edge.

In a plan view facing the surface 60S, the mask region elements 61a have a rectangular shape and are arranged at equal intervals in the first direction D1, and all the mask region elements 61a have the same length along the first direction D1. One mask region 61 is composed of, for example, two mask region elements 61a, and one peripheral region 62 is composed of, for example, three peripheral region elements 62a.

Of the mask regions 61, the portion corresponding to one panel when the organic layer is formed is a panel region 61p which is a virtual region, and each mask region element 61a includes three panel regions 61p. .. In addition, each mask area element 61a may include a plurality of panel areas 61p other than 3.

As described above, a roll-to-roll device is used for manufacturing the metal mask base material 60 using the metal sheet and for manufacturing the vapor deposition metal mask using the metal mask base material 60. The metal mask base material 60 may be wound around a winding core immediately after the metal mask base material 60 is completed or during a plurality of steps of manufacturing a metal mask for vapor deposition using the metal mask base material 60. be.

When the metal mask base material 60 is wound around the winding core, the diameter of the columnar body including the winding core and the metal mask base material 60 increases as the metal mask base material 60 is wound around the winding core. Therefore, if each peripheral region element 62a extends along the second direction D2 orthogonal to the first direction D1 which is the extending direction of the metal mask base material 60, each peripheral region element in the circumferential direction of the winding core. The 62a is less likely to overlap with the other peripheral region elements 62a.

According to such a configuration, the effects described below can be obtained.
(7) Since the peripheral region element 62a extends along the second direction D2, when the metal mask base material 60 is wound around the winding core in the manufacture of the metal mask for vapor deposition, each peripheral region element is wound in the circumferential direction of the winding core. The 62a is less likely to overlap the other peripheral region element 62a, and therefore the unwinding of the metal mask base material 60 with respect to the winding core can be suppressed. As a result, damage to the metal mask base material 60 due to unwinding is suppressed.

In the metal mask base material 60 described above with reference to FIG. 15, the distance between the mask region elements 61a in the first direction D1 may include two or more different distances from each other, in other words. The length of the peripheral region element 62a along the first direction D1 may include two or more different distances from each other. Further, the plurality of mask region elements 61a may include two or more types of mask region elements 61a having different lengths along the first direction D1. Even with such a configuration, as long as each peripheral region element 62a extends along the second direction D2, the same effect as in (7) described above can be obtained.

As shown in FIG. 16, on the surface 70S of the metal mask base material 70, the mask region 71 extends along the first direction D1 and a plurality of mask region elements 71a arranged at intervals in the second direction D2. It may be composed of. The peripheral region 72 extends along the first direction D1 and is composed of a plurality of peripheral region elements 72a arranged at intervals in the second direction D2. In the second direction D2, the mask region element 71a and the peripheral region 72a are formed. The elements 72a may be arranged alternately. That is, in the vapor deposition metal mask formed by using the metal mask base material 70, the peripheral region element may be located only on a part of the surface edge.

On the surface 70S, the plurality of mask region elements 71a have a rectangular shape and are arranged at equal intervals along the second direction D2, and all the mask region elements 71a have the same width along the second direction D2. Further, on the surface 70S, the plurality of peripheral region elements 72a also have a rectangular shape and are arranged at equal intervals along the second direction D2, and all the peripheral region elements 72a have the same length along the second direction D2. ..

Each mask area element 71a includes two panel areas 71p, which are virtual areas, but may include a plurality of panel areas 71p other than 2.

Even with such a configuration, as long as the metal mask base material 70 has the peripheral region 72, the same effect as (1) described above can be obtained. However, when the metal mask base material 70 is wound around the winding core, the positions of the peripheral region elements 72a are fixed in the direction in which the rotation axis of the winding core extends. Therefore, in the direction in which the rotation axis of the winding core extends, the diameter of the portion of the columnar body including the peripheral region element 72a is larger than the diameter of the portion including the mask region element 71a.

Therefore, when a force acts on the metal mask base material 70 wound around the winding core along the direction in which the rotation axis of the winding core extends, the metal mask base material 70 may be unwound with respect to the winding core. be.

According to the metal mask base material 60 described above with reference to FIG. 15, as described above, the metal mask base material 60 can be prevented from being unwound with respect to the winding core, as compared with the metal mask base material 70. Is also preferable.

In the metal mask base material 70 described above with reference to FIG. 16, the distance between the mask region elements 71a in the second direction D2 may include two or more different distances from each other. In other words, the plurality of peripheral region elements 72a may include two or more types of peripheral region elements 72a having different lengths along the second direction D2. Further, the plurality of mask region elements 71a may include two or more types of mask region elements 71a having different lengths along the second direction D2.

In the metal mask base material 10 according to the first embodiment, the metal mask base material 60 described above with reference to FIG. 15, and the metal mask base material 70 described above with reference to FIG. 16, the first The metal mask for vapor deposition may be separated from the base material for the metal mask along both the direction D1 and the second direction D2.

In other words, in the metal mask base material 10 of the first embodiment, for example, a plurality of mask region elements 11a arranged in a row along the first direction D1 may be set as one mask region 11. Then, in a plan view facing the surface 10S, a region surrounding each mask region element 11a and having a ladder shape extending along the first direction D1 may be set as the peripheral region 12.

Further, in the metal mask base material 60 described above with reference to FIG. 15, for example, a plurality of mask region elements 61a arranged in a row along the first direction D1 may be set as one mask region 61. Then, two peripheral region elements 62a sandwiching the mask region 61 in the first direction D1 may be set as peripheral regions.

Furthermore, in the metal mask base material 70 described above with reference to FIG. 16, for example, one mask region element 71a including a plurality of panel regions 71p arranged along the first direction D1 is designated as one mask region 71. It may be set. Then, the peripheral region element 72a sandwiching the mask region 71 in the second direction D2 may be set as the peripheral region 72.

In any of these configurations, as long as the metal mask base material includes the mask region and the peripheral region, the same effect as (1) described above can be obtained.

As shown in FIG. 17, the metal mask base material 80 includes n mask regions 81 arranged along the first direction D1 and n peripheral regions 82 surrounding each mask region 81. May be good.

In a plan view facing the surface 80S, each mask region 81 has a rectangular shape and is arranged at equal intervals along the first direction D1. The peripheral region 82 has a rectangular annular shape in a plan view facing the surface 80S. Each mask area 81 includes, for example, six panel areas 81p, which are virtual areas, but may include a plurality of panel areas 81p other than 6.
Even with such a configuration, the same effect as (1) and (2) described above can be obtained.

As shown in FIG. 18, the metal mask base material 10 may have a plurality of sensor marks 14 on the surface 10S. Each sensor mark 14 is, for example, a portion having a larger surface roughness than other portions on the surface 10S.

Of the peripheral region 12, the portion located at the edge of the surface 10S is the edge portion 12a, and the plurality of sensor marks 14 are arranged at the edge portion 12a at equal intervals along the first direction D1. In the first direction D1, the pitch at which the plurality of sensor marks 14 are lined up is the mark pitch P.

The roll-to-roll device for manufacturing the metal mask 20 for vapor deposition includes a detection unit for detecting the sensor mark 14 and an exposure unit for irradiating the second dry film resist DR2 with exposure light.

In the step of exposing the second dry film resist DR2, the exposed portion can irradiate only the second dry film resist DR2 included in the predetermined length in the first direction D1 with the exposure light by one exposure. .. The mark pitch P is equal to the length that can be irradiated with light by one exposure in the first direction D1.

The detection unit includes an irradiation unit that irradiates the metal mask for vapor deposition with light, and a light receiving unit that receives the light emitted from the metal mask for vapor deposition. In the detection unit, the irradiation unit and the light receiving unit may be located coaxially, and the axis on which the irradiation unit and the light receiving unit are located forms a predetermined angle with the surface 10S of the metal mask base material 10. .. Alternatively, the axis on which the irradiation unit is located and the axis on which the light receiving unit is located may form at different angles from the surface 10S of the metal mask base material 10, and in this case, the light receiving unit is the irradiation unit. Must be positioned so as not to overlap in the specular reflection direction of the light emitted toward the metal mask base material 10.

In the configuration in which the irradiation unit and the light receiving unit are located coaxially, the irradiation unit hits the metal mask base material 10 when light is applied to a portion of the metal mask base material 10 other than the sensor mark 14. Since the light is specularly reflected, the light receiving portion cannot receive most of the light emitted by the metal mask base material 10. On the other hand, when the irradiation unit irradiates the sensor mark, the light that hits the sensor mark 14 is scattered, so that the amount of light received by the light receiving unit illuminates the portion other than the sensor mark. It will be bigger than when it was. The detection unit can detect the sensor mark 14 based on such a difference in the amount of light.

In the step of exposing the second dry film resist DR2, the roll-to-roll apparatus conveys the metal mask base material 10 to the exposed portion at each mark pitch P. As a result, the exposed portion can irradiate the second dry film resist DR2 with the exposure light so that no gap is formed along the first direction D1.

-The plurality of mask holes 23 may be arranged at equal intervals along each of the first direction D1 and the second direction D2.

In each mask region element 21a, the edge in the region thinner than the other portion of the metal mask 20 for vapor deposition is the edge of the mask region element 21a. The distance between the edge of the mask region element 21a and the mask hole 23 located in the mask region element 21a is preferably larger than the pitch, which is the repeated distance of the mask hole 23. Further, the distance between the edge of the mask region element 21a and the mask hole 23 located in the mask region element 21a is preferably larger than twice the pitch, which is the repeated distance of the mask hole 23.

Here, as described above, the edge of the mask region element 11a and its periphery are regions where peeling of the dry film resist and breakage of the dry film resist following the step between the mask region element 11a and the peripheral region 12 are likely to occur. Therefore, the processing accuracy at the center of the mask region element 11a is likely to be lower than that at the center of the mask region element 11a.

In this respect, the distance between the edge of the mask region element 21a and the mask hole 23 located within the mask region element 21a is greater than the pitch, which is the repeated distance of the mask hole 23, and even of the pitch. If the configuration is larger than twice, it is possible to suppress a decrease in processing accuracy in the mask hole 23.

The plurality of mask-side through holes 22b may be located on the entire edge of the vapor deposition metal mask 20 in the circumferential direction. Alternatively, the plurality of mask-side through holes 22b may be located only on the edges of the metal mask 20 for vapor deposition, which face each other in the second direction D2 in a plan view facing the surface 20S.
Even in such a configuration, as long as the plurality of mask-side through holes 22b are located at the edge portion 22a, the same effect as in (4) described above can be obtained.

The support member 31 is not limited to having a rectangular frame shape, and may be composed of, for example, two members arranged along the first direction D1 or two members arranged along the second direction D2. May be done. Alternatively, the support member 31 may be composed of two members arranged along a direction intersecting the first direction D1.

The metal sheet 40 is not limited to a sheet stretched to have a predetermined thickness by rolling, but is a metal sheet etched to have a predetermined thickness by another method, for example, wet etching. May be good. Further, the metal sheet 40 may be an electroplated metal sheet or an electrolytic plating metal sheet.

-When etching the metal mask base material 10, one dry film resist may be attached to each mask region element 11a. With such a configuration, the thickness of the dry film resist is less than or equal to the above-mentioned step (T2-T1), so that the step on the surface 10S of the metal mask base material 10 after the dry film resist is attached. Can be made smaller.

When the dry film resist is attached to each mask region element 11a, the step (T2-T1) may be in the range of 5 μm or more and 15 μm or less. Even in such a case, in the metal mask base material 10 to which the dry film resist is attached, the surface composed of a part of the surface 10S of the metal mask base material 10 and the dry film resist shall be a substantially flat surface. Becomes possible. Therefore, it is possible to expose the dry film resist in a state where the dry film resist and the mask are in close contact with each other.

The material for forming the first dry film resist DR1 and the material for forming the second dry film resist DR2 may be a positive resist material. The resist used for etching each of the metal sheet 40 and the metal mask base material 10 is not limited to the dry film resist, but is applied to the surface 40S of the metal sheet 40 and the surface 10S of the metal mask base material 10. , It may be formed by applying a coating liquid containing a resist material.

[Second Embodiment]
A second embodiment of the metal mask base material, the metal mask for vapor deposition, and the metal mask unit of the present invention will be described with reference to FIGS. 19 to 22. In the second embodiment, the shape of the boundary between the mask region and the peripheral region in the metal mask base material is different from that in the first embodiment, and by extension, the boundary between the mask region and the peripheral region in the metal mask for vapor deposition. The shape of is different.

Therefore, in the following, these differences will be described in detail, and the description of the other parts of the metal mask base material, the metal mask for vapor deposition, and the metal mask unit will be omitted. Further, since the shape of the boundary between the mask region and the peripheral region in the metal mask for vapor deposition corresponds to the shape of the boundary between the mask region and the peripheral region in the base material for metal mask, the configuration of the base material for metal mask is described below. And only the method of manufacturing the base material for the metal mask will be described in detail.

[Structure of base material for metal mask]
The configuration of the metal mask base material will be described with reference to FIG.
As shown in FIG. 19, the metal mask base material 90 has n mask regions 91 and n peripheral regions partitioned by steps on the surface 90S, similarly to the metal mask base material 10 of the first embodiment. It has 92.

Each mask region 91 is a region in which the height position from the back surface 90R to the front surface 90S is lower than that of the peripheral region 92. In the peripheral region 92, the portion connected to the mask region 91 is the inclined region 92a, and in the inclined region 92a, the portion closer to the mask region 91 is thinner. In the peripheral region 92, the region other than the inclined region 92a is the flat region 92b, and the thickness of the flat region 92b is substantially equal in the entire flat region 92b.

In the metal mask base material 90, the thickness of the peripheral region 92 gradually decreases toward the thickness of the mask region 91 at the step between the mask region 91 and the peripheral region 92. Therefore, even if a dry film resist is used when etching the metal mask base material 90 in the production of the metal mask for vapor deposition, the dry film resist and the metal mask base material are formed at a step between the mask region 91 and the peripheral region 92. It is possible to prevent a gap from being formed between the 90 and the 90. Therefore, it is possible to prevent a part of the dry film resist from peeling off from the metal mask base material 90 while the metal mask base material 90 is etched.

The amount of change in thickness in the inclined region 92a is larger in the inclined region 92a closer to the mask region 91. Therefore, the flat region 92b and the inclined region 92b and the inclined region 91 in the direction from the peripheral region 92 to the mask region 91, as compared with the configuration in which the amount of change in the thickness in the inclined region 92a is larger in the inclined region 92a closer to the flat region 92b. At the boundary with 92a, the thickness of the inclined region 92a is unlikely to change suddenly. Therefore, in the step between the mask region 91 and the peripheral region 92, a gap is less likely to be formed between the dry film resist and the metal mask base material 90.

[Manufacturing method of base material for metal mask]
A method for manufacturing the metal mask base material 90 will be described with reference to FIGS. 20 and 22. Hereinafter, among the methods for producing a base material for a metal mask, a step of exposing the dry film resist and a step of developing the dry film resist will be described.

As shown in FIG. 20, when manufacturing the metal mask base material 90, first, the metal sheet 100 is prepared, and the third dry film resist DR3 is attached to the surface 100S of the metal sheet 100. The material for forming the third dry film resist DR3 is a negative type resist material like the first dry film resist. Then, the third mask M3 is placed on the surface of the third dry film resist DR3 opposite to the surface in contact with the metal sheet 100.

The third mask M3 includes a plurality of shielding portions M3a, a plurality of halftone dot portions M3b, and a transmitting portion M3c. In a plan view facing the surface 100S of the metal sheet 100, the portion of the metal sheet 100 that overlaps with the shielding portion M3a of the third mask M3 is the mask compartment 101, and the portion that overlaps with the halftone dot portion M3b is the inclined portion 102. The portion overlapping the transparent portion M3c is the flat section 103.

FIG. 21 shows the planar structure of the third mask M3 in a plan view facing the surface 100S of the metal sheet 100. In FIG. 21, dots are added to a part of the third mask M3 for convenience of illustrating the difference in the degree of light transmission in each portion of the third mask M3.

As shown in FIG. 21, the third mask M3 has a plurality of shielding portions M3a, a plurality of halftone dot portions M3b, and a transmitting portion M3c. In a plan view facing the surface 100S of the metal sheet 100, the plurality of shielding portions M3a are arranged at equal intervals along each of the first direction D1 and the second direction D2, and each halftone dot portion M3b is all other. It surrounds one shielding portion M3a different from the halftone dot portion M3b. In the third mask M3, the portion other than the shielding portion M3a and the halftone dot portion M3b is the transmitting portion M3c.

The halftone dot portion M3b includes a plurality of shielding portions and a transmission portion other than the plurality of shielding portions in a plan view facing the surface 100S of the metal sheet 100. The shielding portion and the transmitting portion are located over the entire thickness direction of the third mask M3. In the halftone dot portion M3b, the closer to the shielding portion M3a, the higher the density of the shielding portion occupying the halftone dot portion M3b.

When the third dry film resist DR3 is exposed using the third mask M3, in a plan view facing the surface 100S of the metal sheet 100, the portion of the third dry film resist DR3 that overlaps with the halftone dot portion M3b is a shielding portion. The closer the portion overlaps with M3a, the smaller the amount of light irradiated per unit area.

As shown in FIG. 22, when the third dry film resist DR3 is developed, the third resist pattern RP3 is formed. The third resist pattern RP3 is a resist that is a portion exposed via the halftone dot portion M3b of the third mask M3 and a halftone dot resist portion RP3a and a portion exposed via the transmission portion M3c of the third mask M3. It is provided with a part RP3b.

In the halftone dot resist portion RP3a, the closer the portion is closer to the resist portion RP3b, the larger the area occupied by the resist material per unit area in the plan view facing the surface 100S of the metal sheet 100.

Therefore, by etching the metal sheet 100 with the third resist pattern RP3, the metal mask base material 90 described above with reference to FIG. 19, that is, the metal having the peripheral region 92 including the inclined region 92a. The mask base material 90 can be formed.

Further, by manufacturing a metal mask for thin film deposition using such a base material 90 for metal mask, it is possible to manufacture a metal mask for thin film deposition having an inclined region in a portion connected to the mask region in the peripheral region.

As described above, according to the second embodiment of the metal mask base material, the metal mask for vapor deposition, and the metal mask unit, the following effects can be obtained in addition to the effects of the first embodiment described above. can.

(8) Since it is possible to prevent a gap from being formed between the dry film resist and the metal mask base material 90 at the step between the mask region 91 and the peripheral region 92, while the metal mask base material 90 is etched. , It is possible to prevent a part of the dry film resist from peeling off from the metal mask base material 90.

[Modified example of the second embodiment]
In addition, the above-mentioned second embodiment can be carried out by appropriately changing as follows.
As shown in FIG. 23, of the peripheral region 112 included in the metal mask base material 110, the inclined region 112a connected to the mask region 111 may have the following configuration. That is, in the inclined region 112a, the portion closer to the mask region 111 may have a thinner thickness, and the portion closer to the flat region 112b may have a larger amount of change in thickness.

Even with such a configuration, as long as the metal mask base material 110 has the inclined region 112a, the same effect as (8) described above can be obtained. However, as described above, in order to suppress the peeling of the dry film resist at the step between the mask region and the peripheral region, it is preferable that the amount of change in thickness is smaller in the inclined region as the portion closer to the flat region.

As shown in FIG. 24, of the peripheral region 122 included in the metal mask base material 120, the inclined region 122a connected to the mask region 121 may have the following configuration. That is, in the inclined region 122a, the portion closer to the mask region 121 may be thinner, and the amount of change in thickness may be constant from the portion connected to the flat region 122b to the portion connected to the mask region 121. Even with such a configuration, as long as the metal mask base material 10 has the inclined region 122a, the same effect as (8) described above can be obtained.

The metal mask base material has, as the inclined region, among the inclined region described in the second embodiment, the inclined region described above with reference to FIG. 23, and the inclined region described above with reference to FIG. 24. Two or more of may be provided. Even with such a configuration, as long as the metal mask base material has an inclined region, the same effect as (8) described above can be obtained.

In each of the metal mask base material 90 in the second embodiment, the metal mask base material 110 described above with reference to FIG. 23, and the metal mask base material 120 described above with reference to FIG. 24, The boundary between the inclined region and the mask region element connected to the inclined region is the edge of the mask region element. Further, also in the vapor deposition metal mask formed by using the metal mask base materials 90, 110, 120, the edge of the mask region element and the inside of the mask region element are similar to the vapor deposition metal mask 20 of the first embodiment. The distance between the mask holes located in is preferably larger than the pitch, which is the repeated distance of the mask holes. Further, the distance between the edge of the mask region element and the mask hole located in the mask region element is preferably larger than twice the pitch, which is the repeated distance of the mask holes.

-The material for forming the third dry film resist DR3 may be a positive type resist material. Further, the resist used for etching the metal mask base material 90 is not limited to the dry film resist, and may be formed by applying a coating liquid containing a resist material to the metal mask base material 90. ..
-Each of the configuration of the second embodiment and the configuration of the modified example of the second embodiment can be implemented in appropriate combination with the configuration of the modified example of the first embodiment.

10, 50, 60, 70, 80, 90, 110, 120 ... Metal mask base material, 10S, 20S, 40S, 50S, 60S, 70S, 80S, 90S, 100S ... Surface, 10R, 20R, 50R, 90R ... Back surface 11,21,51,61,71,81,91,111,121 ... Mask area, 11a, 21a, 51a, 61a, 71a ... Mask area element, 12,22,52,62,72,82,92 , 112, 122 ... Peripheral area, 12a, 22a ... Edge portion, 13 ... Through hole, 14 ... Sensor mark, 20 ... Metal mask for vapor deposition, 22b ... Mask side through hole, 23 ... Mask hole, 30 ... Metal mask unit, 31 ... Support member, 31a ... Support side through hole, 31b, RP2a ... Opening, 32 ... Fastening member, 40, 100 ... Metal sheet, 41, 101 ... Mask section, 42 ... Peripheral section, 61p, 71p, 81p ... Panel area , 62a, 72a ... Peripheral region elements, 92a, 112a, 122a ... Inclined region, 92b, 112b, 122b ... Flat region, 102 ... Inclined compartment, 103 ... Flat compartment, DR1 ... First dry film resist, DR2 ... Second dry Film resist, DR3 ... 3rd dry film resist, M1 ... 1st mask, M2 ... 2nd mask, M3 ... 3rd mask, M1a, M2a, M3a ... shielding part, M1b, M2b, M3c ... transmitting part, M3b ... net Point portion, RP1 ... 1st resist pattern, RP2 ... 2nd resist pattern, RP3 ... 3rd resist pattern, RP3a ... Net point resist portion, RP3b ... Resist portion.

Claims (9)

To form a thin-film deposition metal mask including a mask region for collectively performing thin-film deposition for a plurality of panels, each having a plurality of pixels, and a peripheral region other than the mask region in the vapor deposition metal mask. A method for producing a base material for a metal mask having a single sheet of metal.
To prepare a metal sheet having a front surface and a back surface that is a surface opposite to the front surface.
The metal sheet is formed with n (n is an integer of 1 or more) mask regions partitioned on the surface and n peripheral regions other than the mask regions on the surface. With
The thickness of the mask area is thinner than the thickness of the peripheral area.
The mask region is a region for a metal mask that does not have a plurality of mask holes for forming the plurality of pixels and whose height position from the back surface to the front surface is lower than that of the peripheral region. Material manufacturing method. The extending direction of the metal mask base material is the first direction.
The direction orthogonal to the first direction is the second direction.
The mask region is composed of a plurality of mask region elements arranged at predetermined intervals along each of the first direction and the second direction.
The method for producing a base material for a metal mask according to claim 1, wherein the peripheral region has a grid pattern on the surface. The extending direction of the metal mask base material is the first direction.
The direction orthogonal to the first direction is the second direction.
The mask area extends along the second direction and is composed of a plurality of mask area elements arranged at intervals in the first direction.
The peripheral region extends along the second direction and is composed of a plurality of peripheral region elements arranged at intervals in the first direction.
The method for producing a base material for a metal mask according to claim 1, wherein the mask region element and the peripheral region element are alternately arranged in the first direction. The production of the metal mask base material according to any one of claims 1 to 3, wherein the portion of the peripheral region connected to the mask region is an inclined region whose thickness is thinner as the portion closer to the mask region is formed. Method. The method for producing a metal mask base material according to any one of claims 1 to 4, wherein the mask region is a region in which the height position from the front surface to the back surface is lower than the peripheral region. The method for producing a metal mask base material according to any one of claims 1 to 5, wherein the material for forming the metal mask base material is Invar. A single metal sheet having a mask area for collectively performing thin-film deposition for a plurality of panels, each having a plurality of pixels, and a peripheral area other than the mask area in the metal mask for vapor deposition. This is a method for manufacturing a metal mask for thin-film deposition.
A plurality of mask regions penetrating the mask region along the thickness direction with respect to the mask region partitioned on the front surface of the metal mask base material including a front surface and a back surface which is a surface opposite to the front surface. To form a mask hole,
The peripheral region is a region other than the mask region on the surface.
The thickness of the mask area is thinner than the thickness of the peripheral area.
The mask region is a region in which the height position from the back surface to the front surface is lower than that of the peripheral region.
A method for producing a metal mask for vapor deposition, wherein the surface has a step between a portion of the mask region outside the portion where the plurality of mask holes are formed and the peripheral region. To manufacture a metal mask for thin film deposition by the method for manufacturing a metal mask for thin film deposition according to claim 7.
A method for manufacturing a metal mask unit, which comprises supporting the metal mask for vapor deposition by a support member. Metal mask for vapor deposition and
A support member for supporting the metal mask for vapor deposition is provided.
The metal mask for vapor deposition is
A single metal sheet comprising a mask region for collectively performing vapor deposition for a plurality of panels, each having a plurality of pixels, and a peripheral region, which is a region other than the mask region in the metal mask for vapor deposition. Has a shape,
A front surface and a back surface opposite to the front surface are provided.
The mask region is partitioned on the surface and has a plurality of mask holes penetrating the mask region along the thickness direction.
The peripheral region is a region other than the mask region on the surface.
The thickness of the mask area is thinner than the thickness of the peripheral area.
The mask region is a region in which the height position from the back surface to the front surface is lower than that of the peripheral region.
The surface is a metal mask unit having a step between a portion of the mask region outside the portion where the plurality of mask holes are formed and the peripheral region.

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