JP6424521B2 - Vapor deposition mask, vapor deposition mask with frame, and method of manufacturing organic semiconductor device - Google Patents

Description

The present invention relates to a deposition mask , a deposition mask with a frame, and a method of manufacturing an organic semiconductor device.

  With the increase in the size of products using organic EL elements or in the size of substrates, the demand for the increase in size of deposition masks is also increasing. And the metal plate used for manufacture of the vapor deposition mask comprised from a metal is also enlarged. However, with the current metal processing technology, it is difficult to precisely form the slits in a large metal plate, and it is impossible to cope with the high definition of the slits. Moreover, when it is set as the vapor deposition mask which consists only of metals, the mass will also increase with an increase in size, and since the total mass including a flame | frame will also increase, it will cause a trouble in handling.

  Under such circumstances, according to Patent Document 1, a metal mask provided with a slit and a resin mask located on the surface of the metal mask and having a plurality of rows of openings corresponding to a pattern to be formed by vapor deposition are stacked. An evaporation mask that has been developed has been proposed. According to the vapor deposition mask proposed in Patent Document 1, both high definition and light weight can be satisfied even when the size is increased, and it is possible to form a highly precise vapor deposition pattern. ing.

Patent No. 5288072 gazette

  The present invention aims to further improve a vapor deposition mask in which a metal mask and a resin mask are stacked as described in Patent Document 1 above, and improves the yield in the manufacturing process using the vapor deposition mask and improves the quality. It is a main object of the present invention to provide a method of manufacturing an organic semiconductor device using a vapor deposition mask capable of forming a vapor deposition mask, a vapor deposition mask preparation body, a flame deposition mask, and a flame deposition mask.

The vapor deposition mask of the present invention for solving the above problems is a resin mask having a resin mask opening necessary for forming a vapor deposition pattern, and is located on one surface of the resin mask and overlaps the resin mask opening. And a metal mask having a metal mask opening, wherein the metal mask has an alignment mark detected by the reflected light of the detection light, and the alignment mark is a through hole penetrating the metal mask, or the metal mask A recess that does not penetrate the metal mask from the surface on the resin mask side of the metal mask, the resin mask exposes the alignment mark of the metal mask, and the opening of the alignment mark Also, it has a through hole for alignment mark exposure whose opening area is large, and the other surface of the resin mask is a general area A rough surface area having a reflectance of the detection light lower than that of the general area, and the resin mask opening of the resin mask is an opening penetrating the general area portion, and the alignment mark of the resin mask The exposure through hole is a through hole which penetrates the rough surface area portion.
Moreover, the vapor deposition mask of one embodiment is a vapor deposition in which a metal mask provided with a slit overlapping the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be vapor deposited. A plurality of alignment marks are provided on a part of the surface of the metal mask in contact with the resin mask, and at least one of the plurality of alignment marks is detected by the reflected light of the detection light. And the at least one alignment mark is not in contact with the one surface of the resin mask, and the other surface of the resin mask is at least a general area located in the vicinity of the opening. And a rough surface area having a reflectance of the detection light lower than that of the general area, and the rough surface area has the at least one alignment. And it is located in the vicinity of over click.

  In addition, the arithmetic average roughness Ra of the rough surface area of the rough surface area may be 0.1 μm or more.

  The arithmetic mean roughness Ra of the general area may be less than 0.1 μm.

  Further, the alignment mark may be a through hole penetrating the metal mask.

Moreover, the vapor deposition mask preparation body of this invention for solving the said subject is a vapor deposition mask preparation body used in order to manufacture said vapor deposition mask, Comprising: It positions on one side of a resin board and a resin board. And the other surface of the resin plate has the general area and the rough surface area.
Further, in the vapor deposition mask preparation body of one embodiment, a metal mask provided with a slit overlapping with the opening is laminated on one surface of the resin mask provided with the opening corresponding to the pattern to be vapor deposited and prepared. And a metal mask provided with a slit on one surface of the resin plate, wherein one side of the metal mask is in contact with the resin plate. The unit is provided with a plurality of alignment marks, and at least one of the plurality of alignment marks is an alignment mark detected by reflected light of detection light, and the at least one alignment mark is the alignment mark It is not in contact with the one surface of the resin plate, and the other surface of the resin plate is at least overlapped with the planned opening formation position where the opening is formed. Includes a general area, the roughened area is low reflectivity of the detection light than the general area, the roughened area is characterized by being located in the vicinity of said at least one alignment mark.

Further, in the framed vapor deposition mask of the present invention for solving the above problems, the vapor deposition mask is fixed to a frame.
In one embodiment, the framed vapor deposition mask is formed by laminating a metal mask provided with a slit overlapping with the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be vapor deposited and manufactured. The deposition mask is a frame-attached deposition mask fixed to a frame, and a plurality of alignment marks are provided on a part of the surface of the metal mask in contact with the resin mask, and the plurality of alignment marks At least one of which is an alignment mark detected by the reflected light of the detection light, and the at least one alignment mark is not in contact with the one surface of the resin mask, and the other surface of the resin mask is At least a general area located in the vicinity of the opening and a rough surface having a reflectance of the detection light lower than that of the general area Has a frequency, the roughened area is characterized by being located in the vicinity of said at least one alignment mark.

Further, a method of manufacturing an organic semiconductor device according to the present invention for solving the above problems includes the step of forming a vapor deposition pattern on a vapor deposition target using a framed vapor deposition mask in which a vapor deposition mask is fixed to a frame. The framed vapor deposition mask described above is used as the vapor deposition mask.
In one embodiment, the method for manufacturing an organic semiconductor device includes the step of forming a vapor deposition pattern on a vapor deposition target using a framed vapor deposition mask having a vapor deposition mask fixed to a frame, wherein the vapor deposition pattern is formed A metal mask provided with a slit overlapping with the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be formed by evaporation, the evaporation mask fixed to the frame being formed by evaporation And a plurality of alignment marks detected by the reflected light of the detection light are provided on a part of the surface of the metal mask in contact with the resin mask, and at least one of the plurality of alignment marks is detected An alignment mark detected by reflected light of the light, and the at least one alignment mark is the resin The other surface of the resin mask is not in contact with the one surface of the mask, and the other surface of the resin mask is at least a general region located near the opening and a rough surface having a lower reflectance of the detection light than the general region. The rough surface area may be a deposition mask located in the vicinity of the at least one alignment mark.

  Further, in the step of forming the vapor deposition pattern, alignment between the vapor deposition mask with frame and the vapor deposition target is performed using the alignment mark provided on the vapor deposition mask of the flame deposition mask with a frame, and the organic A semiconductor device may be manufactured.

  According to the vapor deposition mask of the present invention or the vapor deposition mask with a frame, even when the size is increased, both the high definition and the reduction in weight can be satisfied, and the yield and quality in the manufacturing process using the vapor deposition mask can be improved. it can. Moreover, according to the vapor deposition mask preparation body of this invention, the vapor deposition mask which has said effect can be obtained. Moreover, according to the method for manufacturing an organic semiconductor device of the present invention, an organic semiconductor device excellent in quality can be manufactured with high yield.

(A) is the front view which looked at the vapor deposition mask of one embodiment from the resin mask side, (b) is the front view which looked at the resin mask of one embodiment from the metal mask side, (c) is It is an AA schematic sectional view of (b). (A), (b) is a partial expanded sectional view of a vapor deposition mask. (A), (b) is a schematic sectional drawing of the vapor deposition mask of one Embodiment. It is a schematic sectional drawing of the vapor deposition mask of one Embodiment. It is the front view which looked at the vapor deposition mask of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask of one embodiment from the resin mask side. It is a schematic sectional drawing of the comparative vapor deposition mask. (A) is a schematic sectional drawing which shows the state which made the vapor deposition mask of 1 embodiment, and the vapor deposition object intimately contact, (b) shows the state which made the vapor deposition mask for comparison, vapor deposition object closely. It is a schematic sectional view. It is a schematic sectional drawing which shows the state which closely contacted the vapor deposition mask of one Embodiment, and vapor deposition target object, It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of a 1st embodiment from the metal mask side. (A) is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side, (b) is the front view seen from the resin mask side. (A) is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side, (b) is the front view seen from the resin mask side. It is a schematic sectional drawing for demonstrating the manufacturing method of the vapor deposition mask of one Embodiment. It is the front view which looked at the flamed deposition mask of one embodiment from the resin mask side. It is the front view which looked at the flamed deposition mask of one embodiment from the resin mask side.

<< Vapor deposition mask >>
Below, the vapor deposition mask 100 of one Embodiment of this invention is demonstrated concretely.

  As shown in FIGS. 1A to 1C, the vapor deposition mask 100 according to the embodiment of the present invention is formed on one surface of a resin mask 20 provided with an opening 25 corresponding to a pattern to be vapor deposited. A metal mask 10 provided with a slit 15 overlapping the opening 25 is stacked. FIG. 1A is a front view of the vapor deposition mask of an embodiment viewed from the resin mask 20 side, and FIG. 1B is a front view of the vapor deposition mask of an embodiment viewed from the metal mask 10 side. (C) is an AA schematic cross section of (b).

  And the vapor deposition mask 100 of one Embodiment of this invention has the following "1st characteristic" and "2nd characteristic." In the “first feature”, as shown in FIG. 1, a plurality of alignment marks 40 are provided on a part of the surface of metal mask 10 in contact with resin mask 20. At least one is an alignment mark detected by the reflected light of the detection light, and the at least one alignment mark is one surface of the resin mask 20 (in the form shown in FIG. 1C, the lower surface of the resin mask) It is not in contact with In the second feature, as shown in FIG. 1, the other surface of the resin mask 20 (the upper surface of the resin mask in the embodiment shown in FIG. 1C) is at least near the opening 25. It has a general area 80 located and a rough surface area 70 whose reflectance of detection light is lower than that of the general area 80, and the rough surface area 70 is located near at least one alignment mark 40. It is in. Hereinafter, among the surfaces of the resin mask 20, the surface on the side in contact with the metal mask 10 is referred to as one surface of the resin mask 20, and the surface on the side not in contact with the metal mask 10 is referred to as the other surface of the resin mask 20. Further, among the surfaces of the metal mask 10, the surface on the side in contact with the resin mask 20 (the upper surface of the metal mask in the embodiment shown in FIG. 1C) is referred to as one surface of the metal mask 10 and is in contact with the resin mask 20. The surface on the non-side (in the form shown in FIG. 1C, the lower surface of the metal mask) is referred to as the other surface of the metal mask.

  In the form shown in each drawing, a plurality of alignment marks 40 are provided on a part of one surface of metal mask 10, and all of the plurality of alignment marks 40 are not in contact with one surface of resin mask 20. I am taking The vapor deposition mask according to the embodiment of the present invention is not limited to the illustrated embodiment, and a part of the plurality of alignment marks 40 provided on one surface of the metal mask 10 corresponds to one of the resin masks 20. It may be in contact with the face of (not shown). In a preferred vapor deposition mask, two or more of the plurality of alignment marks provided on one surface of the metal mask 10 are not in contact with one surface of the resin mask 20. Hereinafter, the term “alignment mark 40” means the alignment mark 40 not in contact with one surface of the resin mask 20 unless otherwise noted.

  Further, in the embodiment shown in each drawing, in the other surface of the resin mask 20, the area located in the vicinity of the alignment mark 40 is the rough surface area 70, and the other areas are detected more than the rough surface area 70. It is a general area 80 where the light reflectance is high. The vapor deposition mask according to the embodiment of the present invention is not limited to the illustrated embodiment, and in the other surface of the resin mask 20, a region located in the vicinity of the alignment mark 40, specifically, the resin mask 20. A through hole for exposing the alignment mark 40 is provided, and a region located in the vicinity of the through hole on the other surface of the resin mask 20 is a rough surface region 70 and a region located in the vicinity of the opening 25. May satisfy the condition that the region is the general area 80. For example, in the other surface of the resin mask 20, an area not located in the vicinity of the alignment mark 40 and an area not located in the vicinity of the opening 25 are areas where the reflectance of detection light is higher than that of the rough surface area 70. It may be a region where the reflectance of the detection light is low. That is, there is no limitation on the reflectance of the detection light in the area which is not located near the alignment mark 40 and the area which is not located near the opening 25. This is because the reflectance of detection light in the area near the alignment mark 40 and in the area not located near the opening 25 or the surface state of the area is the detection accuracy when detecting the alignment mark 40 By not affecting the dimensional accuracy.

  According to the vapor deposition mask 100 of the embodiment of the present invention having the above “first feature”, the alignment mark 40 not in contact with one surface of the resin mask 20 is formed on a part of one surface of the metal mask 10. Since it is provided, when the alignment mark 40 is read by the reflected light of the detection light, that is, when the alignment mark 40 is detected, the resin mask 20 does not prevent the visibility of the alignment mark 40, and the alignment mark 40 is not Can be accurately detected, and the accuracy of alignment using the alignment mark 40 can be improved.

  Note that all the alignment marks 40 provided on a part of one surface of the metal mask 10 are in contact with one surface of the resin mask 20, in other words, all the alignment marks 40 are resin of the resin mask 20. When the alignment mark 40 is read by the reflected light of the detection light from the alignment mark reading side in the comparison thermal transfer sheet 100X (see FIG. 9) covered by the mark, the distance between the alignment mark 40 and the alignment mark reading side The presence of the intervening resin mask 20 hinders the visibility of the alignment mark 40, making it difficult to accurately detect the alignment mark 40.

  Next, the superiority of the vapor deposition mask according to the embodiment of the present invention having the above-mentioned “second feature” will be described by taking a comparative vapor deposition mask not having the above “second feature” as an example. FIGS. 2 (a) and 2 (b) are diagrams showing the state of reflection of the detection light when the alignment mark is detected by the reflection light of the detection light, and FIG. 2 (a) is an embodiment of the present invention. FIG. 2B is a partially enlarged cross-sectional view in the vicinity of the alignment mark of the comparative deposition mask not having the above-mentioned “second feature”. The code (1) in the figure indicates the detection light, and the code (2) indicates the reflection light of the detection light. Further, the reflected light indicated by the symbol (2) means that the longer the length of the arrow, the higher the reflection intensity.

  The detection of the alignment mark 40 by the reflected light of the detection light is performed by irradiating the detection light onto the alignment mark 40 and one surface of the metal mask 10 located in the vicinity of the alignment mark 40 and using the reflected light of the detection light To be done. Therefore, in order to accurately detect the alignment mark 40 by the reflected light of the detection light, the detection light is reflected only on one surface of the metal mask 20, and the detection light is not reflected on the other surface, or It is preferable that the reflectance of detection light is low. That is, the detection light is reflected only on one surface of the metal mask 20, and the detection light is not reflected on a region of the other surface of the resin mask 20 located in the vicinity of the alignment mark 40, or Low reflectivity is desirable. This is because, in the case where the reflectance of the detection light is high in the region located in the vicinity of the alignment mark 40 in the other surface of the resin mask 20, the reflected light reflected by the other surface of the resin mask 20 is a noise component As a result, the detection light is irradiated to one surface of the metal mask 10, and the detection accuracy when detecting the alignment mark 40 using the reflected light is lowered.

  Further, as shown in FIG. 10B, when the deposition mask 100 and the deposition target 150 are brought into close contact with each other such that the other surface of the resin mask 20 faces the deposition target 150, the resin mask 20 is formed. When the smoothness of the other surface of the substrate is high, interference fringes due to adhesion occur between the other surface of the resin mask 20 and the deposition target 150. The interference fringes cause a decrease in contrast when detecting the alignment mark 40 and also act as a noise component, so that the detection of the alignment mark 40 in a state in which the deposition mask 100 and the deposition object 150 are in close contact In order to increase the detection accuracy, it is necessary not to generate interference fringes caused by the close contact between the vapor deposition mask 100 and the object to be vapor-deposited 150 or to suppress the generation of interference fringes.

  A method of preventing the detection light from being reflected on the other surface of the resin mask 20 or reducing the reflectance of the detection light, and suppressing the generation of interference fringes when the vapor deposition mask 100 and the vapor deposition object 150 are brought into contact with each other One means is to reduce the smoothness of the other surface of the resin mask 20. In other words, there is a means for roughening the other surface of the resin mask 20. However, when the entire other surface of the resin mask 20 is roughened, the smoothness of the other surface of the resin mask located in the vicinity of the opening 25 also decreases. In this case, the dimensional accuracy of the opening 25 provided in the resin mask 20 can not be sufficiently satisfied, which is a hindrance to the production of a highly precise deposition pattern on the deposition target. In the case where the entire other surface of the resin mask 20 is roughened, the resin mask 20 is overlaid on the deposition mask 100 and the deposition target so as to form a deposition pattern on the deposition target. There will be a gap between the and the object to be deposited. If there is a gap between the resin mask 20 and the deposition target near the opening 25 of the resin mask 20, the deposition material released from the deposition source is attached to the deposition target through the opening. When this happens, part of the deposition material wraps around the gap, and the accuracy of the dimensions and shape of the deposition pattern produced on the deposition target object is reduced. That is, when a gap is generated between the resin mask 20 and the object to be vapor-deposited in the vicinity of the opening 25, this becomes an obstacle in producing a highly precise vapor deposition pattern on the object to vapor-deposit.

  In the vapor deposition mask 100 according to the embodiment of the present invention, as in the above-mentioned “second feature”, the other surface of the resin mask 20 is closer to the general region 80 located in the vicinity of the opening 25 and the general region 80 Accurate detection of the alignment mark without lowering the dimensional accuracy of the opening 25 by having the rough surface area 70 with low reflectance of detection light and positioning the rough surface area 70 in the vicinity of the alignment mark 40 It is possible to do to In other words, by making the smoothness of the region located in the vicinity of the alignment mark 40 lower than the smoothness of the region located in the vicinity of the opening 25 in the other surface of the resin mask, the other surface of the resin mask The reflectance of the detection light is lowered in the region located in the vicinity of the alignment mark 40 among the surfaces of the above, and one surface of the metal mask 10 is irradiated with the detection light, and the reflected light is used to The detection accuracy is improved. Further, in the other surface of the resin mask 20, in a region near the opening 25, a general region having a lower reflectance of detection light than the rough surface region, that is, a general region having high smoothness is located. Therefore, the dimensional accuracy of the opening 25 can be maintained in a high state, and the generation of a gap between the resin mask 20 and the object to be evaporated in the vicinity of the opening 25 is suppressed. It becomes possible to produce a fine deposition pattern.

  That is, as shown in FIG. 2A, according to the vapor deposition mask having the above-mentioned “second feature”, the other of the resin masks 20 is better than the comparative vapor deposition mask not having the above “second feature”. The reflection of the detection light can be suppressed in the region located in the vicinity of the alignment mark 40 among the surfaces, and when one surface of the metal mask 10 is irradiated with the detection light and the alignment mark 40 is detected by the reflected light Detection accuracy can be improved.

  Further, according to the above-mentioned “second feature”, when the deposition mask 100 provided with the resin mask 20 is in close contact with the deposition target 150, the portion where the rough surface region 70 and the deposition target 150 are in contact Generation of interference fringes can be suppressed. Thus, even when the alignment mark 40 is detected in a state in which the deposition mask 100 and the deposition target 150 are in close contact with each other, detection accuracy when detecting the alignment mark 40 can be improved.

  There is no limitation on the wavelength range of the detection light irradiated to detect the alignment mark 40, and it is, for example, about 360 nm to 830 nm which is a visible light range. The detection of the alignment mark 40 can be performed, for example, using a CCD camera and an image recognition mechanism.

  The specific position of the roughened area 70 is not particularly limited, and can be appropriately set according to the size of the alignment mark 40 and the irradiation range to which the detection light is irradiated, but at least the other surface of the resin mask 20 Among them, a part of the irradiation range to which the detection light is irradiated is the roughened area 70. The entire range of the irradiation range to which the detection light is irradiated may be the roughened area 70. For example, in the vapor deposition mask of the form shown in FIG. 1, when the vapor deposition mask 100 is viewed in plan from the resin mask side on the other surface of the resin mask 20, an area where the surface of the metal mask 10 is exposed (exposed area 10X The roughened area is located so as to surround. An example of the preferable roughened area 70 is a range of about 20 mm from the exposed area 10X.

  As described above, the rough surface region 70 is in the rough surface state, and it is sufficient if the condition that the reflectance of the detection light is lower than that of the general region 80 is satisfied. Although there is no limitation, the arithmetic average roughness (Ra) of the roughened area 70 is preferably 0.1 μm or more, more preferably 0.15 μm or more, and particularly preferably 0.2 μm or more. . By positioning the rough surface region 70 having an arithmetic average roughness (Ra) of 0.1 μm or more in the vicinity of the alignment mark 40, the reflectance of the detection light in the rough surface region 70 can be obtained regardless of the wavelength range of the detection light. This can be made sufficiently low, and the detection accuracy when detecting the alignment mark 40 can be further improved. The preferred upper limit value of the arithmetic mean roughness (Ra) of the roughened area 70 is not particularly limited, but is approximately 2 μm in consideration of processing accuracy and the like.

  Of the other surface of the resin mask 20, the general region 80 located in the vicinity of the opening 25 is the same as that of the resin mask 20 when the vapor deposition mask 100 is viewed in plan from the resin mask side on the other surface of the resin mask 20. It is preferable to be located so as to surround the opening 25. By positioning the general region 80 so as to surround the opening 25 of the resin mask 20, the dimensional accuracy of the opening 25 is reduced, or, in the vicinity of the opening 25, between the resin mask 20 and the evaporation target It is possible to more effectively suppress the formation of gaps in the

  Of the other surface of the resin mask 20, the general area 80 located in the vicinity of the opening 25 preferably has an arithmetic average roughness (Ra) of less than 0.1 μm and not more than 0.09 μm. Is more preferred. By positioning the general region 80 having an arithmetic mean roughness (Ra) of less than 0.1 μm in the vicinity of the opening 25, the dimensional accuracy of the opening 25 is reduced and the generation of shadows described later is effectively suppressed. be able to. The lower limit value of the arithmetic average roughness (Ra) of the general region 80 is not particularly limited, but is approximately 0.01 μm in consideration of processing accuracy and the like.

  The arithmetic mean roughness (Ra) referred to in the present specification is the arithmetic mean roughness (Ra) measured in accordance with JIS B 0601 (2001), and the arithmetic mean roughness of the rough surface area 70 and the general area 80 (Ra) can be measured, for example, using a scanning white light interferometer (NewView 5000) manufactured by ZYGO.

  The “alignment mark” referred to in the specification of the present application means alignment when fixing the deposition mask to the frame, and a deposition mask with frame when performing deposition using a framed deposition mask in which the deposition mask is fixed to the frame. It is used to perform alignment with the deposition target, or alignment between the deposition mask 100 and the deposition target before being fixed to the frame. The alignment mark 40 can also be used for alignment other than this. The alignment between the vapor deposition mask 100 and the vapor deposition target object 150 can also be performed, for example, in a state in which the vapor deposition mask 100 and the vapor deposition target object 150 are in close contact with each other, as shown in FIG.

  Fig.10 (a) is a schematic sectional drawing which shows the state which made the vapor deposition mask of 1 embodiment of this invention, and the vapor deposition object intimately contact, and FIG.10 (b) is a comparative vapor deposition mask shown in FIG. It is a schematic sectional drawing which shows the state which made the vapor deposition target object close. In the embodiment shown in FIG. 10A, the deposition target is in close contact with a framed deposition mask formed by fixing the deposition mask to the frame. Then, according to the embodiment of the present invention, the alignment mark 40 having a high detection accuracy can be used to accurately align the framed deposition mask with the deposition target. In addition, it is possible to accurately align the deposition mask and the deposition target before being fixed to the frame. Besides this, the frame and the deposition mask 100 can be accurately aligned. In the illustrated embodiment, the description of the frame is omitted.

(Metal mask)
As shown in FIG. 1C, a metal mask 10 is laminated on one surface of the resin mask 20. The metal mask 10 is made of metal, and as shown in FIG. 1B, slits 15 extending in the longitudinal direction or in the lateral direction are disposed. The slit 15 has the same meaning as the opening. The slit 15 is provided at a position overlapping the opening 25 of the resin mask 20. There is no limitation in particular about the arrangement example of a slit, As shown to each figure, the slit extended in the vertical direction and horizontal direction may be arranged in multiple rows by the vertical direction and horizontal direction, and the slit extended in the vertical direction is A plurality of rows may be arranged in the lateral direction, and a plurality of slits extending in the lateral direction may be arranged in the longitudinal direction. Also, only one row may be arranged in the vertical direction or in the horizontal direction. The "longitudinal direction" and "lateral direction" in the specification of the present application refer to the vertical direction and the lateral direction of the drawing, and are any direction of the deposition mask, the resin mask, the metal mask and the width direction. May be For example, the longitudinal direction of the vapor deposition mask, the resin mask, and the metal mask may be "longitudinal direction", and the width direction may be "vertical direction". In the specification of the present application, although the case where the shape of the deposition mask in plan view is rectangular is described as an example, other shapes such as a circular shape and a diamond shape may be used. In this case, a longitudinal direction, a radial direction, or an arbitrary direction of a diagonal line is taken as a "longitudinal direction", and a direction orthogonal to the "longitudinal direction" is called a "width direction (sometimes referred to as a transverse direction)". do it.

  In the vapor deposition mask 100 according to the embodiment of the present invention, as shown in FIG. 1, a plurality of alignment marks 40 are provided on one surface of the metal mask 10, and at least one of the plurality of alignment marks 40 is It is provided at a position not in contact with one surface of the resin mask 20. Hereinafter, an example of the alignment mark and the arrangement of the alignment mark will be described with reference to FIGS. 1 and 3 to 8. 3 and 4 are schematic cross-sectional views of the vapor deposition mask of the embodiment, and FIGS. 5 to 8 are front views of the vapor deposition mask of the embodiment viewed from the resin mask side.

  There is no particular limitation on the form of the alignment mark 40. For example, as shown in FIG. 1C, a through hole penetrating from the surface of the metal mask 10 in contact with the resin mask to the other surface or As shown to (a), you may be prescribed | regulated by the recessed part provided in the surface of the side which contacts the resin mask of the metal mask 10. FIG. Among them, the alignment mark 40 defined by the through hole shown in FIG. 1C is likely to have a contrast at the time of detection of the alignment mark by the reflected light of the detection light. There is also a case where the In the embodiment shown in FIGS. 1C and 3A, the shape of the through hole or the recess when viewed from the resin mask side is the shape of the alignment mark 40. Also, instead of using a through hole or a recess as the alignment mark 40, as shown in FIG. 3 (b), a resin layer or the like having a predetermined shape on one surface of the metal mask 10 using a resin material or the like. , And the resin layer can be used as the alignment mark 40. In this case, the shape of the resin layer as viewed from the resin mask side is the shape of the alignment mark. When the resin layer is used as the alignment mark 40, a colored resin layer may be used to further enhance the reading accuracy of the alignment mark. Hereinafter, the shape of the alignment mark means the shape of the alignment mark 40 as viewed from the other surface of the resin mask 20. Further, in the case of the shape of the exposed area described later, it means the shape of the exposed area as viewed from the other surface side of the resin mask 20.

  The shape of the alignment mark 40 is also not particularly limited, and examples thereof include a circular shape, a rectangular shape, and a cross shape.

  In the case where the alignment mark 40 is formed by a through hole or a recess, the cross sectional shape of the through hole or the recess is not limited to the form shown in each drawing, and the direction toward the other surface of the resin mask 20 It may be a shape (not shown) having a flared shape, or a shape (not shown) having a flare toward the other surface side of the metal mask 10. Moreover, shapes other than this may be sufficient.

  The vapor deposition mask 100 according to the embodiment of the present invention removes a part of the resin mask 20, in other words, forming an opening hole in a part of the resin mask 20, thereby forming one surface of the metal mask 10. The portion is exposed, and the alignment mark 40 is positioned at the exposed portion. Hereinafter, when viewed from the resin mask side, an area where the surface of the metal mask 10 is exposed may be referred to as an exposed area (see reference numeral 10 (X) in each drawing).

  In the vapor deposition mask 100 according to an embodiment of the present invention, the alignment mark 40 may be positioned on a part of the exposed area 10X, or the exposed area 10X of the metal mask 10 may be used as the alignment mark 40 as it is. For example, in the mode shown in FIG. 1A, FIG. 3, and FIG. 5 to FIG. 8, the alignment mark 40 is positioned at a part of the exposed area 10X. In the form shown in FIG. 4, the exposed area itself is used as the alignment mark 40. In the embodiment shown in FIG. 4, since the exposed region 10X itself becomes the alignment mark 40, it is not necessary to provide a through hole, a recess, a resin layer or the like in the metal mask 10 as shown in FIGS.

  According to the embodiment shown in FIGS. 1A and 3, the alignment mark 40 located in the exposed area 10X is used with a portion of the outer edge of the exposed area 10X, for example, an edge portion, as an auxiliary mark. Mask alignment can be performed. In this embodiment, alignment of the deposition mask can be performed by using two types of alignment marks, so that alignment can be performed with higher accuracy as compared with the deposition mask of the embodiment of FIG. Further, in the vapor deposition mask 100 of the embodiment, since the area located in the vicinity of the alignment mark 40 in the other surface of the resin mask 20 is the rough surface area 70, the outer edge of the exposed area 10X, ie, Can detect the outer edge of the auxiliary mark well.

  The shape of the exposed region 10X is not limited in any way, and may be, for example, a circular shape, a rectangular shape, or a cross shape. When the shape of the exposed region 10X and the shape of the alignment mark 40 located in the exposed region are the same shape, for example, when both the exposed region 10X and the shape of the alignment mark 40 are rectangular, When the alignment mark 40 located in the exposed area is recognized, the exposed area may be erroneously recognized. Therefore, in consideration of this point, it is preferable that the shape of the exposed region 10X be a shape different from the shape of the alignment mark 40. For example, as shown in FIGS. 1 and 3, it is preferable that the shape of the exposure region 10X be rectangular and the shape of the alignment mark 40 be circular or the like. The size of the alignment mark 40 and the exposed area 10X in plan view from the other surface side of the resin mask is not particularly limited, but is smaller than the irradiation range of the detection light. In other words, the irradiation range of the detection light is not particularly limited, and the range may be wider than the size of the alignment mark 40 or the exposed area 10X in plan view.

  The exposed area 10X is also not particularly limited, and can be set appropriately according to the position of the alignment mark 40. FIGS. 5-8 is the front view which looked at the vapor deposition mask of one Embodiment from the resin mask side, and is a figure which shows an example of the exposure area | region 10X. In the embodiment shown in the respective drawings, the area other than the rough surface area 70 is the general area 80 on the other surface of the resin mask 20, but in the other surface of the resin mask If the condition that the region is located is met, other forms can be taken. In the deposition mask 100 of the form shown in FIG. 5, in the outer periphery in the lateral direction of the deposition mask 100, a part of the surface of the metal mask 10 is exposed, and in the exposed region 10X where the surface of the metal mask 10 is exposed. The alignment mark 40 is located. In other words, in the deposition mask shown in FIG. 5, by making the size of the metal mask 10 larger than that of the resin mask 20, a part of the metal mask is made to project outward in the lateral direction of the resin mask. There is. In the vapor deposition mask 100 of the form shown in FIG. 6, a part of the surface of the metal mask 10 is exposed by providing a predetermined through hole in the resin mask in the vicinity of the periphery of the vapor deposition mask. Also in the vapor deposition mask shown in FIG. 6, the alignment mark 40 is located in the exposed region 10X where the surface of the metal mask 10 is exposed. Further, some of the plurality of alignment marks 40 may be located in an area other than the exposure area 10X. In other words, a part of the plurality of alignment marks 40 may be in contact with one surface of the resin mask 20. Further, in the vapor deposition mask 100 shown in FIGS. 5 to 8 as well, the general region 80 in which the other surface of the resin mask 20 is positioned in the vicinity of the opening 25 and the reflectance of detection light is lower than that of the general region 80. A rough surface area 70 is provided, and the rough surface area 70 is located near at least one alignment mark 40.

  In the embodiment shown in FIG. 2A, in order to expose a part of the surface of the metal mask 10, the resin mask 20 is provided with an opening. The cross-sectional shape of the opening for exposing the metal mask is not limited to the illustrated form, and may be a shape (not shown) having a spread toward the other surface of the resin mask 20. It may be a shape (not shown) having a spread toward the other surface side of the metal mask 10. Incidentally, in consideration of the incidence efficiency of the detection light on the alignment mark 40, the sectional shape of the opening provided in the resin mask 20 is from the one surface side of the resin mask 20 to the other surface side of the resin mask 20. It is preferable that the shape is a shape having a spread, that is, a shape having a spread toward the irradiation source side of the detection light.

  In the deposition mask shown in FIGS. 7 and 8, in the region other than the outer periphery of the deposition mask 100, a predetermined through hole or the like is provided in the resin mask 20 to expose a part of the surface of the metal mask 10 Alignment mark 40 is located in exposed area 10X where the surface of mask 10 is exposed. The exposed area 10X is not limited to the form shown in each drawing, and for example, the form shown in each drawing can be combined. Also, positions other than the illustrated exposed area may be used as the exposed area.

  In the embodiment shown in FIG. 10A, when the resin mask 20 of the deposition mask 100 and the deposition object 150 are brought into close contact, the alignment mark 40 is provided at a position overlapping with the deposition object. As shown in FIG. 5, when the resin mask 20 of the deposition mask 100 and the deposition target 150 are brought into close contact, the alignment mark 40 can be provided at a position not overlapping the deposition target. Also in the vapor deposition mask of the form shown in FIG. 11, the framed vapor deposition mask or the vapor deposition mask can be accurately aligned with the object to be vapor deposited. In addition, when the deposition mask is fixed to the frame, that is, the alignment can be accurately performed in the stage prior to bringing the deposition target into close contact with the deposition target. As described above, since the rough surface area 70 is located in the vicinity of the alignment mark 40 on the other surface of the resin mask, the rough surface area 70 and the evaporation target 150 are directly The generation of interference fringes can be suppressed at the contact points. Therefore, even when the alignment mark 40 is detected in a state where the deposition mask 100 and the deposition target 150 are in close contact with each other, the detection accuracy at the time of the detection can be improved.

  The material of the metal mask 10 is not particularly limited, and those conventionally known in the field of vapor deposition masks can be appropriately selected and used, and examples thereof include metal materials such as stainless steel, iron nickel alloy, and aluminum alloy. . Among them, Invar material which is an iron-nickel alloy can be suitably used because it is less deformed by heat.

  The thickness of the metal mask 10 is not particularly limited, but is preferably 100 μm or less, more preferably 50 μm or less, and 35 μm or less in order to more effectively prevent the occurrence of shadows. Particularly preferred. When the thickness is smaller than 5 μm, the risk of breakage or deformation increases and handling tends to be difficult. In the shadow, a part of the deposition material released from the deposition source collides with the inner wall surface of the slit 15 of the metal mask 10 and does not reach the deposition target object, so that the thickness is thinner than the target deposition thickness. It refers to a phenomenon that causes undeposited portions to be film thickness. In particular, as the shape of the opening 25 is miniaturized, the influence of the shadow increases.

  Moreover, in the form shown to each figure, although the shape when the opening of the slit 15 is planarly viewed exhibits rectangular shape, there is no limitation in particular about opening shape, and the opening shape of the slit 15 is trapezoidal shape, circular shape It may be in any shape. The same applies to the shape of the opening 25 of the resin mask 20 when viewed in plan.

  The cross-sectional shape of the slit 15 formed in the metal mask 10 is not particularly limited either, but it spreads toward the other surface side of the metal mask which is a deposition source, that is, one surface of the metal mask 10 It is preferable that the shape has a shape that spreads toward the other surface of the metal mask 10. Specifically, the angle formed by the straight line connecting the lower bottom end of the slit 15 of the metal mask 10 and the upper bottom end of the slit 15 of the metal mask 10 with the bottom of the metal mask 10, in other words, the metal mask In the thickness direction section of the inner wall surface constituting the slit 15 of 10, the angle between the inner wall surface of the slit 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (the lower surface of the metal mask in the illustrated embodiment) is It is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 80 °, and still more preferably in the range of 25 ° to 65 °. In particular, within this range, it is preferable that the angle be smaller than the deposition angle of the deposition machine used.

  There is no limitation in particular about the method to laminate metal mask 10 on a resin mask, resin mask 20 and metal mask 10 may be pasted together using various adhesives, and the resin mask which has self-adhesiveness may be used. . The sizes of the resin mask 20 and the metal mask 10 may be the same or may be different. If the resin mask 20 is made smaller than the metal mask 10 in consideration of fixing to the frame optionally performed later, and the outer peripheral portion of the metal mask 10 is exposed, the metal mask 10 is obtained. Welding between the frame and the frame is easy, which is preferable.

(Resin mask)
As shown in FIG. 1, the resin mask 20 is provided with a plurality of openings 25. The plurality of openings 25 are provided at positions overlapping the slits 15 of the metal mask 10 when the metal mask 10 and the resin mask 20 are stacked.

  As described above, the resin mask 20 is partially removed, thereby exposing a portion of the surface of the metal mask 10. Then, at least one of the plurality of alignment marks is located in an area where a part of the surface of the metal mask is exposed.

  Further, the other surface of the resin mask 20 has a general area 80 and a rough surface area 70 whose reflectance of detection light is lower than that of the general area 80, and the rough surface area 70 is an alignment mark of the alignment mark 40. The general region 80 is located in the vicinity of the opening 25.

  There is no particular limitation on the method of making the region located in the vicinity of the alignment mark 40 in the other surface of the resin mask 20 as the rough surface region 70. For example, the resin using sand blast, laser, polishing, dry etching process, etc. The other surface of the mask 20 can be roughened.

  A conventionally known resin material can be appropriately selected and used for the resin mask 20, and the material is not particularly limited. However, high definition openings 25 can be formed by laser processing etc. It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate. Such materials include polyimide resin, polyamide resin, polyamide imide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable . By using a resin mask using this resin material, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate or the moisture absorption rate with heat or with time can be reduced.

  The thickness of the resin mask 20 is not particularly limited either, but when vapor deposition is performed using the vapor deposition mask 100 according to an embodiment of the present invention, a vapor deposited portion that has a thickness smaller than the intended vapor deposited film thickness The resin mask 20 is preferably as thin as possible to prevent the occurrence of shadows. However, if the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation or the like is increased. On the other hand, if it exceeds 25 μm, generation of shadow may occur. In consideration of this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, the risk of defects such as pinholes and deformation can be reduced, and the generation of shadows can be effectively prevented. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and less than 10 μm, more preferably 4 μm or more and 8 μm or less, the influence of shadow when forming a high definition pattern exceeding 400 ppi can be more effectively prevented. . Moreover, although the resin mask 20 and the metal mask 10 mentioned later may be joined directly, and may be joined via the adhesive layer, the resin mask 20 and the metal mask via the adhesive layer When 10 is bonded, it is preferable that the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is within the above-mentioned preferable thickness range.

  Further, in the form shown in each drawing, the opening shape of the opening 25 has a rectangular shape, but the opening shape is not particularly limited, and the opening shape of the opening 25 is any shape such as trapezoidal or circular. It may be.

  The opposing end faces of the resin mask forming the opening 25 may be substantially parallel, but as shown in FIG. 1C, the cross-sectional shape of the opening 25 is the other surface of the metal mask which is a deposition source. It is preferable that the shape is a shape having a spread toward the side, that is, a shape having a spread toward the one surface of the resin mask 20 from the other surface of the resin mask 20. Specifically, the angle between the bottom bottom end of the opening of the resin mask, the straight line connecting the top bottom end of the opening of the resin mask, and the bottom of the vapor deposition mask, in other words, the opening of the resin mask 20 In the cross section in the thickness direction of the inner wall surface constituting 25, the angle between the inner wall surface of the opening 25 and the surface of the resin mask 20 not in contact with the metal mask 10 (in the illustrated embodiment, the lower surface of the resin mask) is It is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 80 °, and still more preferably in the range of 25 ° to 65 °. In particular, within this range, it is preferable that the angle be smaller than the deposition angle of the deposition machine used.

  Hereinafter, a first embodiment and a second embodiment will be described by way of example with respect to the form of a vapor deposition mask capable of producing a vapor deposition pattern with higher definition. In addition, the vapor deposition mask 100 is not limited to 1st Embodiment and 2nd Embodiment which are demonstrated below, The pattern produced by vapor deposition in the position which overlaps with the metal mask 10 in which the slit 15 was formed, and the said slit 15 is produced. Any form may be used as long as it satisfies the condition that the resin mask 20 in which the opening 25 corresponding to is formed is stacked. For example, the slits 15 formed in the metal mask 10 may have a stripe shape (not shown). Further, the slits 15 of the metal mask 10 may be provided at a position not overlapping the entire screen.

  The vapor deposition mask 100 according to the first embodiment and the second embodiment described below has the “first feature” and the “second feature” in the same manner as the vapor deposition mask according to the embodiment described above. It is characterized by Therefore, various configurations described above can be appropriately selected and used for the alignment mark 40, the general area 80, and the rough surface area 70 unless otherwise noted.

<Evaporation mask of the first embodiment>
As shown in FIG. 12, the vapor deposition mask 100 according to the first embodiment of the present invention is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and a plurality of vapor deposition masks are formed on one surface of the resin mask 20. The metal mask 10 provided with the slits 15 is stacked, and the resin mask 20 is provided with the openings 25 necessary for forming a plurality of screens, and each slit 15 is at a position overlapping at least one entire screen. It is characterized in that it is provided. Moreover, the vapor deposition mask 100 of the first embodiment has the above-mentioned "first feature" and "second feature", and a plurality of alignment marks 40 is formed on a part of one surface of the metal mask 10. Provided, at least one of the plurality of alignment marks 40 being an alignment mark detected by the reflected light of the detection light, and the at least one alignment mark being in contact with one surface of the resin mask 20 The other surface of the resin mask 20 at least has a general area 80 located in the vicinity of the opening 25 and a rough surface area 70 whose reflectance of detection light is lower than that of the general area 80. The surface area 70 is characterized by being located in the vicinity of the at least one alignment mark. The vapor deposition mask 100 of the first embodiment in a preferable form has a form in which two or more of the plurality of alignment marks 40 are not in contact with one surface of the resin mask 20. In the embodiment shown in FIGS. 12 to 15, the alignment mark 40 which is not in contact with one surface of the resin mask is located in the vicinity of the outer periphery of the vapor deposition mask. Alignment marks 40 not in contact with the surface may be located. Moreover, the alignment mark 40 which is not in contact with one surface of the resin mask may be located in both the vicinity of the outer periphery of the vapor deposition mask and the predetermined region between one screen. Moreover, in the form shown in FIGS. 12-15, although the alignment mark 40 is prescribed | regulated by the through-hole which penetrates the metal mask 10, alignment by a recessed part, a resin layer, etc. (FIG. 3 (a) (b)). The mark 40 may be defined. The same applies to the vapor deposition mask of the second embodiment. In the vapor deposition mask of the first embodiment, it is preferable that the general region 80 of the surface of the resin mask be positioned so as to surround the entire one screen while surrounding the openings 25 constituting the one screen.

  The vapor deposition mask 100 according to the first embodiment is a vapor deposition mask used to simultaneously form vapor deposition patterns for a plurality of screens, and one vapor deposition mask 100 can simultaneously form vapor deposition patterns corresponding to a plurality of products. it can. The "opening" in the vapor deposition mask of the first embodiment means a pattern to be produced using the vapor deposition mask 100 of the first embodiment, and, for example, the vapor deposition mask is used to form an organic layer in an organic EL display In the case of using it, the shape of the opening 25 is the shape of the organic layer. In addition, “one screen” consists of an assembly of openings 25 corresponding to one product, and when the one product is an organic EL display, it is necessary to form one organic EL display An aggregate of the organic layers, that is, an aggregate of the openings 25 to be the organic layer is “one screen”. And in the vapor deposition mask 100 of the first embodiment, in order to simultaneously form vapor deposition patterns for a plurality of screens, the “one screen” is arranged on the resin mask 20 for a plurality of screens at a predetermined interval. . That is, the resin mask 20 is provided with the opening 25 necessary for forming a plurality of screens.

  In the vapor deposition mask of the first embodiment, a metal mask 10 provided with a plurality of slits 15 is provided on one surface of a resin mask, and each slit is provided at a position overlapping at least one entire screen. Characterized by points. In other words, between the openings 25 necessary for forming one screen, the same length as the longitudinal length of the slit 15 between the openings 25 adjacent in the lateral direction, and the same as the metal mask 10 There is no metal wire portion having the same thickness as that of the metal mask 10 and having the same length as the lateral length of the slit 15 between the metal wire portions having a thickness and the openings 25 adjacent in the longitudinal direction. It is characterized by Hereinafter, the same length as the longitudinal length of the slit 15 and the same length as the length of the metal wire portion having the same thickness as the metal mask 10 or the lateral length of the slit 15 and the same as the metal mask 10 The metal wire portion having a thickness may be collectively referred to simply as the metal wire portion.

  According to the vapor deposition mask 100 of the first embodiment, when the size of the openings 25 necessary to configure one screen and the pitch between the openings 25 configuring one screen are narrowed, for example, a screen exceeding 400 ppi Even if the size of the openings 25 and the pitch between the openings 25 are extremely small in order to form the above, it is possible to prevent interference due to the metal wire portion, and a high definition image can be formed. It becomes. When one screen is divided by a plurality of slits, in other words, when a metal wire portion having the same thickness as the metal mask 10 is present between the openings 25 constituting one screen, As the pitch between the openings 25 constituting one screen becomes narrower, the metal wire portion existing between the openings 25 becomes a hindrance when forming the vapor deposition pattern on the object to be vapor-deposited, and the high definition vapor deposition pattern It becomes difficult to form. In other words, when a metal wire portion having the same thickness as the metal mask 10 is present between the openings 25 constituting one screen, the metal wire portion causes the occurrence of a shadow to form a high definition screen Is difficult.

  Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. 12 to 15. In the illustrated embodiment, an area closed by a broken line is one screen. In the embodiment shown, for convenience of explanation, the aggregate of a small number of openings 25 is one screen, but it is not limited to this embodiment. For example, when one opening 25 is one pixel, one screen There may be openings 25 of several million pixels.

  In the embodiment shown in FIG. 12, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the vertical direction and the horizontal direction. In the embodiment shown in FIG. 13, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the lateral direction. Further, in the embodiment shown in FIG. 14, one screen is constituted by an assembly of the openings 25 in which a plurality of openings 25 are provided in the vertical direction. And in FIGS. 12-14, the slit 15 is provided in the position which overlaps with the whole 1 screen.

  As described above, the slit 15 may be provided at a position overlapping only one screen, or as shown in FIGS. 15 (a) and 15 (b), provided at a position overlapping the entire two or more screens. It may be In FIG. 15A, in the resin mask 10 shown in FIG. 12, a slit 15 is provided at a position overlapping the entire two continuous screens in the lateral direction. In FIG. 15 (b), slits 15 are provided at positions overlapping with all three continuous screens in the vertical direction.

Next, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described by taking the form shown in FIG. 12 as an example. There is no limitation in particular about the pitch between the opening parts 25 which comprise 1 screen, and the magnitude | size of the opening part 25, It can set suitably according to the pattern vapor-deposited and produced. For example, in the case of forming a high-definition vapor deposition pattern of 400 ppi, the horizontal pitch (P1) and the vertical pitch (P2) of the openings 25 adjacent to each other in the opening 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. Further, one opening 25 is not limited to one pixel, and for example, depending on the pixel arrangement, a plurality of pixels may be combined into one opening 25.

  The horizontal pitch (P3) and the vertical pitch (P4) between the screens are not particularly limited either, but as shown in FIG. 12, when one slit 15 is provided at a position overlapping the entire screen, A metal wire portion will be present between each screen. Therefore, the vertical pitch (P4) and the horizontal pitch (P3) between the respective screens are smaller than the vertical pitch (P2) and the horizontal pitch (P1) of the openings 25 provided in one screen. In this case, or in the case where they are substantially the same, the metal wire portion existing between the screens tends to be broken. Therefore, in consideration of this point, the pitch (P3, P4) between the screens is preferably wider than the pitch (P1, P2) between the openings 25 constituting one screen. An example of the inter-screen pitch (P3, P4) is about 1 mm to 100 mm. Note that the pitch between the screens means the pitch between adjacent openings in one screen and another screen adjacent to the one screen. The same applies to the pitch of the openings 25 and the pitch between the screens in the vapor deposition mask of the second embodiment described later.

  As shown in FIG. 15, when one slit 15 is provided at a position overlapping with the entire two or more screens, the slit may be provided between a plurality of screens provided in one slit 15. There will be no metal wire portion that constitutes the inner wall surface. Therefore, in this case, the pitch between two or more screens provided at the position overlapping with one slit 15 may be substantially equal to the pitch between the openings 25 constituting one screen.

  Further, in the resin mask 20, a groove (not shown) extending in the longitudinal direction or the lateral direction of the resin mask 20 may be formed. When heat is applied during deposition, the resin mask 20 thermally expands, which may cause changes in the size and position of the opening 25. However, forming the grooves absorbs the expansion of the resin mask. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and changing the size and position of the opening 25 as a result of the accumulation of thermal expansion occurring at various places of the resin mask. There is no limitation on the formation position of the groove, and it may be provided between the openings 25 constituting one screen or at a position overlapping the openings 25 but is preferably provided between the vertical screens. The grooves may be provided only on one surface of the resin mask, for example, the surface on the side in contact with the metal mask, or may be provided only on the surface on the side not in contact with the metal mask. Alternatively, they may be provided on both sides of the resin mask 20.

  In addition, it may be a groove extending in the longitudinal direction between the adjacent screens, or a groove may be formed extending in the lateral direction between the adjacent screens. Furthermore, it is also possible to form a groove in the aspect which combined these.

  The depth and width of the groove are not particularly limited, but if the depth of the groove is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease, so this point should be taken into consideration. Setting is required. Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method or the like such as a U-shape or a V-shape. The same applies to the vapor deposition mask of the second embodiment.

<Evaporation mask of the second embodiment>
Next, the vapor deposition mask of the second embodiment will be described. As shown in FIGS. 16 and 17, in the vapor deposition mask of the second embodiment, one slit (one slit (one slit) is formed on one surface of the resin mask 20 provided with a plurality of openings 25 corresponding to the pattern to be vapor deposited. A feature is that the metal mask 10 provided with the through holes 16) is stacked, and all the plurality of openings 25 are provided at positions overlapping with one through hole provided in the metal mask 10. Do. The vapor deposition mask 100 according to the second embodiment has the above-described "first feature" and "second feature", and as shown in FIGS. 16 (b) and 17 (b), a metal mask A plurality of alignment marks 40 are provided on a part of one side of 10, and at least one of the plurality of alignment marks 40 is an alignment mark detected by the reflected light of the detection light, and the at least one Alignment marks are not in contact with one surface of the resin mask 20, and the other surface of the resin mask 20 is at least a general area 80 located near the opening 25 and the detection light than the general area 80 The rough surface area 70 is characterized in that the rough surface area 70 is located in the vicinity of the at least one alignment mark. The vapor deposition mask 100 according to the second embodiment of the preferable form has a form in which two or more of the plurality of alignment marks 40 are not in contact with one surface of the resin mask 20. 16 (a) and 17 (a) are front views of the vapor deposition mask of the second embodiment viewed from the metal mask side, and FIGS. 16 (b) and 17 (b) viewed from the resin mask side It is a front view. In the vapor deposition mask 100 according to the second embodiment, as shown in the drawing, the metal mask 10 provided with one slit is laminated on the resin mask 20, and thus an alignment mark not in contact with one surface of the resin mask The reference numeral 40 is located near the outer periphery of the metal mask 10.

  In the second embodiment, the opening 25 means an opening necessary to form a vapor deposition pattern on an object to be vapor deposited, and an opening not necessary to form a vapor deposition pattern on an object to vapor deposition is 1 It may be provided at a position not overlapping the two through holes 16.

  In the vapor deposition mask 100 of the second embodiment, a metal mask 10 having one through hole 16 is provided on a resin mask 20 having a plurality of openings 25, and all of the plurality of openings 25 are It is provided at a position overlapping the one through hole 16. In the vapor deposition mask 100 of the second embodiment having this configuration, the first thickness is the same as the thickness of the metal mask, or no metal wire portion thicker than the thickness of the metal mask exists between the openings 25. As described in the vapor deposition mask of the embodiment, it is possible to form a highly precise vapor deposition pattern as the dimensions of the openings 25 provided in the resin mask 20 without receiving interference by metal wire portions.

  Further, according to the vapor deposition mask of the second embodiment, even when the thickness of the metal mask 10 is increased, the metal mask 10 is not affected by the shadows. The thickness and thickness can be increased to sufficiently satisfy the properties and the handling property, and the durability and the handling property can be improved while enabling the formation of a high definition vapor deposition pattern.

  The resin mask 20 in the vapor deposition mask of the second embodiment is made of a resin, and as shown in FIGS. 16 (a) and 17 (a), corresponds to a pattern to be vapor deposited at a position overlapping one through hole 16 A plurality of openings 25 are provided. The opening 25 corresponds to the pattern to be vapor deposited, and the deposition material released from the evaporation source passes through the opening 25 to form a deposition pattern corresponding to the opening 25 on the deposition target. Ru. In the illustrated embodiment, an example in which the openings are arranged in a plurality of vertical and horizontal rows is described, but the openings may be arranged only in the vertical direction or in the horizontal direction.

  The deposition mask 100 of the second embodiment may be used to form a deposition pattern corresponding to one screen, or may be used to simultaneously form deposition patterns corresponding to two or more screens. . "One screen" in the vapor deposition mask of the second embodiment means an assembly of the openings 25 corresponding to one product, and in the case where the one product is an organic EL display, one organic EL display A collection of organic layers necessary to form a thin film, that is, a collection of openings 25 to be the organic layer, is “one screen”. In this case, it is preferable that the openings 25 be provided at predetermined intervals (see the example of the openings in FIGS. 12 to 14 and the arrangement example of one screen). Although one screen is configured by 120 openings 25 in FIGS. 16 and 17, the present invention is not limited to this embodiment. For example, when one opening 25 is one pixel, several million are used. One screen can also be configured by the individual openings 25. As an example of the pitch between screens, the pitch in the vertical direction and the pitch in the horizontal direction are about 1 mm to 100 mm. Note that the pitch between the screens means the pitch between adjacent openings in one screen and another screen adjacent to the one screen.

  The metal mask 10 in the vapor deposition mask 100 of the second embodiment is made of metal and has one through hole 16. Further, in the present invention, when viewed from the front of the metal mask 10, the one through hole 16 overlaps with all the openings 25, in other words, all the openings 25 arranged in the resin mask 20. It is placed in the visible position. Further, as described above, a plurality of alignment marks 40 are provided on part of the surface of the metal mask 10 in contact with the resin mask 20, and at least one of the plurality of alignment marks 40 is It is located at a position not in contact with one surface of the resin mask 20.

  The metal portion constituting the metal mask 10, that is, the portion other than the through holes 16 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 16, and the size of metal mask 10 as shown in FIG. The height may be smaller than that of the resin mask 20 to expose the vicinity of the outer peripheral portion of the resin mask 20. In any case, the size of the through hole 16 is smaller than the size of the resin mask 20.

  There are no particular limitations on the width (W1) in the lateral direction and the width (W2) in the longitudinal direction of the metal portion forming the wall of the through hole of the metal mask 10 shown in FIG. 16, but the widths W1 and W2 become narrow. Over time, durability and handling tend to decrease. Therefore, it is preferable that W1 and W2 have a width that can sufficiently satisfy the durability and the handling property. Although an appropriate width can be appropriately set in accordance with the thickness of the metal mask 10, as an example of the preferable width, W1 and W2 are both about 1 mm to 100 mm as in the metal mask of the first embodiment.

(Method of manufacturing deposition mask)
Next, an example of the manufacturing method of the vapor deposition mask of one Embodiment of this invention is demonstrated.

  In the method of manufacturing a vapor deposition mask according to one embodiment, as shown in FIG. 18A, the metal mask 10 is provided with a plurality of alignment marks 40 on the surface in contact with the resin plate 30 and the slits 15. 18C, a step of preparing a metal mask 50 with a resin plate laminated with the resin plate 30, a laser is applied through the slit 15 from the metal mask 10 side to the metal mask 50 with a resin plate. By irradiating a laser beam from the resin plate 30 side with respect to the metal plate with resin plate 50, as shown in FIG. 18 (d), an opening 25 corresponding to the pattern to be formed by vapor deposition on the resin plate 30. And forming an opening that exposes at least one of the plurality of alignment marks 40 provided on the surface of the metal mask 10 in contact with the resin plate 30. Furthermore, in the vapor deposition mask 100 after the opening formation step, the reflectance of the detection light in the area located near the alignment mark 40 in the other surface of the resin mask 20 is in the area located near the opening 25. In the case where the condition of being lower than the reflectance of the detection light is not satisfied, that is, in the case where the above-mentioned "second feature" is not satisfied, the resin before, during or after any of the steps described below The surface roughening process (refer FIG.18 (b)) which roughens the area | region located in the vicinity of the alignment mark 40 among the other surfaces of the mask 20 is included.

"Preparation process"
The preparing step is a step of preparing a metal plate with a resin plate formed by laminating a metal mask provided with a plurality of alignment marks 40 on the side in contact with the resin plate and provided with the slits 15 with the resin plate. . The resin plate 30 can use the material described for the resin mask 20.

  In the above method, the resin plate 30 constituting the resin plate attached metal mask 50 may be not only a plate-like resin but also a resin layer or a resin film formed by coating. That is, the resin plate may be prepared in advance, and when forming the metal mask 50 with a resin plate using the metal plate and the resin plate 30, a conventionally known coating method is performed on the metal plate. It is also possible to form a resin layer or a resin film which finally becomes a resin mask by the like.

  The entire surface of the resin plate 30 not in contact with the metal mask 10 (hereinafter, may be referred to as the other surface of the resin plate) may be smooth or rough. For example, as the resin plate 30, the resin plate 30 may be used in which the entire surface on the other side has the preferable arithmetic average roughness (Ra) described in the general region 80 of the vapor deposition mask of the embodiment. The entire surface of the surface may have the preferable arithmetic mean roughness (Ra) described in the rough surface region 70. In the former case, the surface roughening treatment may be performed to roughen the region located in the vicinity of the alignment mark 40 during or after any of the steps described later. In the latter case, a smoothing process may be performed to smooth the region located in the vicinity of the opening 25. There is no limitation in particular about the smoothing process method, For example, the grinding | polishing by a buff etc. can be mentioned. As shown in the drawings, in the vapor deposition mask according to one embodiment, the resin mask 20 is provided with the openings 25 more than the opening holes for exposing the alignment marks 40. In the other surface, the ratio of the rough surface region 70 is extremely small compared to the ratio of the general region 80. When this point is taken into consideration, the smoothing process is not performed on the other surface of the resin plate 30, but the entire surface of the other surface preferably has the preferable arithmetic average roughness described in the general region 80 of the vapor deposition mask of the one embodiment. It is preferable to perform a roughening process with respect to the other side of this resin board 30, using the resin board 30 used as (Ra). The following description will focus on the roughening treatment.

  As a method of forming the metal mask 10 in which the slits 15 are provided and the plurality of alignment marks 40 are provided on the surface in contact with the resin plate 30, a masking member, for example, a resist material is coated on the surface of the metal plate. Then, a predetermined portion is exposed and developed to form a resist pattern in which the positions at which the slits 15 and the alignment marks 40 are finally formed are left. The resist material to be used as the masking member is preferably one having good processability and desired resolution. Then, the resist pattern is used as an etching resistant mask to perform etching by an etching method. After the etching is completed, the resist pattern is washed and removed. Thereby, the metal mask 10 in which the several alignment mark 40 was provided in the surface of the side which touches the slit 15 and the resin board 30 is obtained. The etching for forming the slits 15 and the alignment mark 40 may be performed from one side or both sides of the metal plate. Moreover, when forming the slit 15 and several alignment marks 40 in a metal plate using the laminated body in which the resin plate was provided in the metal plate, a masking member is formed on the surface of the metal plate not in contact with the resin plate. Is applied, and the slits 15 are formed by etching from one side. When the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. It is necessary to apply a masking member on the surface of the resin plate. Also, in the above description, the description was made focusing on the resist material as the masking member, but instead of applying the resist material, a dry film resist may be laminated and the same patterning may be performed.

  Further, instead of the above method, (i) a metal mask 10 (refer to the metal mask in FIG. 3A) having a recess formed on the surface in contact with the resin plate and the resin plate 30 are laminated The metal mask 50 with a resin plate may be prepared, and (ii) a metal mask 10 provided with a resin layer formed using a resin material or the like on the surface on the side in contact with the resin plate (metal mask in FIG. ) And the resin plate 30 may be laminated to prepare a metal mask with resin plate 50. In the case of using the metal plate with resin plate of (i) and (ii), a metal mask 10 in which a concave portion is formed in advance or a resin layer is provided on the surface in contact with the resin plate is prepared. The prepared metal mask 10 is bonded to a resin plate.

"Opening process"
In the opening forming step, as shown in FIG. 18C, an opening corresponding to a pattern formed by vapor deposition on the resin plate 30 by irradiating a laser from the metal mask 10 side through the slit 15 to the metal mask 50 with resin plate The resin plate of the metal mask is formed by forming the portion 25 and irradiating the laser from the resin mask side, or performing etching, blasting, and polishing to form an opening that penetrates a part of the resin mask. This is a step of exposing at least one of the plurality of alignment marks 40 provided on the surface on the side in contact with 30. Through this process, as shown in FIG. 18D, a deposition mask having the above-mentioned "first feature" and "second feature" is obtained.

  The laser irradiation for forming the opening may be performed after the laser irradiation for exposing the alignment mark 40, or may be performed before the laser irradiation for exposing the alignment mark 40.

  In the above, the laser processing method is used as a means for forming the opening 25 and exposing the alignment mark 40. However, instead of the laser processing method, resin using precision pressing, photolithography, etching, etc. By penetrating the plate, it is possible to form the opening 25 corresponding to the pattern to be vapor-deposited on the resin plate and the opening hole for exposing the alignment mark. In addition, it is preferable to use the laser processing method for formation of the opening part 25 from the point which can form the high-definition opening part 25 easily.

  In the vapor deposition mask 100 after the opening formation step, the detection light reflectance in the area located in the vicinity of the alignment mark 40 in the other surface of the resin mask 20 is the detection light in the area located in the vicinity of the opening 25 In the case where the condition of being lower than the reflectance of is not satisfied, the surface roughening step of roughening a region located in the vicinity of the alignment mark 40 in the other surface of the resin mask 20 is included.

Roughening process
In the surface roughening step, as shown in FIG. 18B, of the other surface of the resin mask 20, the region located in the vicinity of the alignment mark 40 is subjected to surface roughening to roughen the region. In this step, the roughened area 70 is a region subjected to the roughening treatment. There is no limitation in particular about the method to roughen, For example, sand blast, a laser, grinding | polishing, dry etching processing etc. can be mentioned. The surface roughening step may be performed before, after or between any of the steps described above. When the roughening process is performed after the opening formation process, the openings 25 formed in the resin mask 20 and the opening holes for exposing one surface of the metal mask 10 are roughened. It is easy to be an obstacle in performing Therefore, in consideration of this point, it is preferable to carry out the roughening process before or during any process before the opening formation process. In the embodiment shown in FIG. 18, the surface roughening process is performed between the preparation process and the opening forming process.

(Deposition mask preparation)
Next, the vapor deposition mask preparation body of one embodiment of the present invention will be described. In the vapor deposition mask preparation body according to one embodiment of the present invention, a metal mask provided with a slit overlapping the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be vapor deposited and prepared. And a metal mask provided with a slit on one side of the resin plate, the metal mask being formed on one side of the metal mask in contact with the resin plate. A plurality of alignment marks are provided, and at least one of the plurality of alignment marks is not in contact with one surface of the resin plate. Furthermore, in the vapor deposition mask preparation body of one embodiment, the other surface of the resin plate has a reflectance of the detection light more than that of the general region where the other surface of the resin plate overlaps with the opening formation scheduled position where the opening 25 is formed. It is characterized in that it has a low roughened area, and the roughened area is located in the vicinity of at least one alignment mark 40.

  The vapor deposition mask preparation body according to the embodiment of the present invention is the same as the vapor deposition mask 100 according to the embodiment of the present invention described above except that the opening 25 is not provided in the resin plate 30, and The description is omitted. As a specific configuration of the vapor deposition mask preparation, a metal plate with a resin plate (see FIG. 18B) described in the preparation step in the method of manufacturing the vapor deposition mask can be mentioned.

  According to the vapor deposition mask preparation body of one embodiment of the present invention, by forming the opening in the resin plate of the vapor deposition mask preparation body, both the high definition and the weight reduction are satisfied even when the size is enlarged, and the vapor deposition mask It is possible to obtain a deposition mask capable of improving the yield and quality of the manufacturing process using Specifically, it is possible to obtain a deposition mask capable of accurately recognizing the alignment mark from the alignment mark reading side.

(Method of manufacturing organic semiconductor device)
Next, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is demonstrated. The method of manufacturing an organic semiconductor device according to an embodiment of the present invention includes the step of forming a vapor deposition pattern by vapor deposition using a framed vapor deposition mask, and in the process of manufacturing the organic semiconductor device, the following framed vapor deposition mask Is characterized in that is used. There is no limitation on the deposition method using the framed deposition mask, and physical vapor deposition (Physical Vapor Deposition) such as reactive sputtering, vacuum deposition, ion plating, electron beam deposition, etc. And chemical vapor deposition such as thermal CVD, plasma CVD, and photo CVD.

  The method of manufacturing an organic semiconductor device according to one embodiment includes the step of forming an electrode on a substrate, the step of forming an organic layer, the step of forming an opposing electrode, and the step of forming an electrode on a substrate. And forming a sealing layer and the like, and a vapor deposition pattern is formed on the substrate by a vapor deposition method using a flame-attached vapor deposition mask in each optional step. For example, when the vapor deposition method using the framed vapor deposition mask is applied to the light emitting layer formation process of each color of R, G and B of the organic EL device, the vapor deposition pattern of the light emitting layer of each color is formed on the substrate. In addition, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is not limited to these processes, It is applicable to the arbitrary processes in manufacture of the conventionally well-known organic-semiconductor element using a vapor deposition method.

  In the method of manufacturing an organic semiconductor device according to an embodiment of the present invention, the deposition mask fixed to the frame in the step of forming the deposition pattern is the deposition mask according to an embodiment of the present invention described above. It is characterized by

  The vapor deposition mask 100 according to the embodiment of the present invention described above can be used as it is as the vapor deposition mask constituting the frame-attached vapor deposition mask, and the detailed description thereof is omitted here. According to the method of manufacturing an organic semiconductor device using the framed vapor deposition mask formed by fixing the vapor deposition mask of the embodiment of the present invention described above to the frame, the alignment mark is accurately recognized from the alignment mark reading side Because of this, the alignment mark can be used to accurately align the framed deposition mask with the deposition target, and an organic semiconductor device having a high definition pattern can be manufactured. As an organic-semiconductor element manufactured by the manufacturing method of this invention, the organic layer of an organic EL element, a light emitting layer, a cathode electrode etc. can be mentioned, for example. In particular, the method of manufacturing an organic semiconductor device according to an embodiment of the present invention can be suitably used for manufacturing the R, G, and B light emitting layers of an organic EL device which requires high pattern precision.

  The framed vapor deposition mask used for manufacturing the organic semiconductor element may satisfy the condition that the vapor deposition mask of the embodiment of the present invention described above is fixed to the frame, and other conditions There is no particular limitation. There is no limitation in particular about a flame | frame, and it should just be a member which can support a vapor deposition mask, for example, a metal flame | frame, a ceramic frame etc. can be used. Among them, the metal frame is preferable in that it is easy to weld the vapor deposition mask to the metal mask and the influence of deformation or the like is small. Hereinafter, an example using a metal frame as the frame will be mainly described. For example, as shown in FIG. 19, a metal frame attached vapor deposition mask 200 in which one vapor deposition mask 100 is fixed to the metal frame 60 may be used, and as shown in FIG. It is also possible to use a metal frame-attached vapor deposition mask 200 in which vapor deposition masks (four vapor deposition masks in the illustrated mode) are aligned and fixed in the vertical direction or horizontal direction (horizontal arrays in the illustrated mode). 19 and 20 are front views of the metal frame-equipped vapor deposition mask 200 of one embodiment as viewed from the resin mask 20 side, and alignment marks are omitted.

  The metal frame 60 is a frame member having a substantially rectangular shape, and has an opening for exposing the opening 25 provided in the resin mask 20 of the deposition mask 100 to be finally fixed to the deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, such as SUS or Invar material, is preferable.

  The thickness of the metal frame is not particularly limited, but is preferably about 10 mm to 30 mm in terms of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the metal frame and the metal mask of the vapor deposition mask can be fixed. A width of about 70 mm can be illustrated.

  In addition, a reinforcing frame 65 or the like may be present at the opening of the metal frame within a range that does not prevent the exposure of the opening 25 of the resin mask 20 that constitutes the deposition mask 100. In other words, the opening of the metal frame 60 may have a configuration divided by a reinforcing frame or the like. In the embodiment shown in FIG. 19, although a plurality of reinforcing frames 65 extending in the lateral direction are arranged in the longitudinal direction, a plurality of reinforcing frames extending in the longitudinal direction instead of the reinforcing frame 65 are arranged in the lateral direction. It may be done. Further, in the embodiment shown in FIG. 20, a plurality of reinforcing frames 65 extending in the longitudinal direction are arranged in the lateral direction, but instead of or in addition to the reinforcing frame 65, the reinforcing frames extending in the lateral direction are in the longitudinal direction Multiple may be arranged. When a plurality of vapor deposition masks 100 according to an embodiment of the present invention are fixed side by side in the longitudinal direction and the lateral direction to the metal frame 60 by using the metal frame 60 in which the reinforcement frame 65 is disposed, The deposition mask can be fixed to the metal frame 60 even at the position where the deposition masks overlap.

  There is no particular limitation on the fixing method of the metal frame 60 and the vapor deposition mask 100 according to the embodiment of the present invention, and it can be fixed using spot welding fixed by laser light or the like, an adhesive, screwing or the like.

(Framed vapor deposition mask)
Next, a framed vapor deposition mask according to an embodiment of the present invention will be described. In the framed vapor deposition mask of one embodiment of the present invention, a metal mask provided with a slit overlapping the opening is laminated on one surface of the resin mask provided with the opening corresponding to the pattern to be vapor deposited and prepared The vapor deposition mask is a frame-attached vapor deposition mask fixed to a frame, wherein a plurality of alignment marks are provided on a part of the surface of the metal mask in contact with the resin mask. At least one is an alignment mark detected by the reflected light of the detection light, and the at least one alignment mark is not in contact with the one surface of the resin mask, and the other surface of the resin mask is at least A rough area having a general area located in the vicinity of the opening and a rough area having a lower reflectance of the detection light than the general area It is characterized by being located in the vicinity of at least one alignment mark.

  The framed vapor deposition mask according to the embodiment of the present invention can be used as it is with the framed vapor deposition mask described in the method of manufacturing the organic semiconductor device according to the embodiment described above, and the detailed description is omitted here. As the vapor deposition mask in the framed vapor deposition mask, the vapor deposition mask of the above embodiment can be used as it is.

200 ... metal frame attached vapor deposition mask 100 ... vapor deposition mask 10 ... metal mask 15 ... slit 16 ... through hole 20 ... resin mask 25 ... opening 30 ... resin plate 40 ... alignment mark 50 ... metal plate with resin plate 60 ... metal frame 70 ... rough surface area 80 ... general area

Claims (6)

A resin mask having a resin mask opening necessary for forming a vapor deposition pattern, and a metal mask having a metal mask opening located on one surface of the resin mask and overlapping the resin mask opening are laminated. A deposition mask,
The metal mask has an alignment mark detected by reflected light of detection light;
The alignment mark is a through hole that penetrates the metal mask, or a recess that does not penetrate the metal mask formed from the surface on the resin mask side of the metal mask to the opposite side.
The resin mask exposes the alignment mark of the metal mask, and has an alignment mark exposing through hole whose opening area is larger than the opening of the alignment mark.
The other surface of the resin mask has a general area and a rough surface area having a reflectance of the detection light lower than that of the general area,
The resin mask opening of the resin mask is an opening that penetrates the general area portion, and the alignment mark exposing through hole of the resin mask is a through hole that penetrates the rough surface area.
Evaporation mask.   The vapor deposition mask according to claim 1, wherein an arithmetic average roughness (Ra) of the rough surface area is 0.1 μm or more.   The deposition mask according to claim 1, wherein an arithmetic mean roughness (Ra) of the general area is less than 0.1 μm.   The vapor deposition mask according to any one of claims 1 to 3 is fixed to a frame,
  Framed deposition mask.   A method of manufacturing an organic semiconductor device, comprising
  Forming a deposition pattern on a deposition target using a framed deposition mask having a deposition mask fixed to a frame;
  The framed deposition mask according to claim 4 is used as the framed deposition mask.
  Method of manufacturing an organic semiconductor device.   In the step of forming the vapor deposition pattern,
  The organic semiconductor element is manufactured by aligning the framed deposition mask with the deposition target using the alignment mark provided on the deposition mask of the framed deposition mask.
  The manufacturing method of the organic-semiconductor element of Claim 5.

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