JP6928896B2 - Mounting board and manufacturing method of mounting board - Google Patents

Description

Embodiments of the present disclosure relate to mounting boards. Moreover, the embodiment of this disclosure relates to the manufacturing method of the mounting substrate.

Conventionally, various techniques related to a mounting substrate on which electronic components such as semiconductor chips are mounted have been proposed. For example, Patent Document 1 discloses a flip-chip bonding type semiconductor device in which a semiconductor chip is mounted on a substrate in a face-down state with the circuit surface facing downward. In the semiconductor device described in Patent Document 1, in order to efficiently release the heat generated by the semiconductor chip to the outside, a refrigerant path member having a refrigerant path formed is attached to the back surface of the semiconductor chip.

Japanese Unexamined Patent Publication No. 2010-73866

When a member for heat dissipation is attached to the back surface of the semiconductor chip as in Patent Document 1, the thickness of the entire semiconductor device increases by the amount of the member.

It is an object of the present disclosure embodiment to provide a mounting board capable of effectively solving such a problem.

One embodiment of the present disclosure includes a substrate having a first surface and a second surface located on the opposite side of the first surface, and a substrate located on the first surface side of the substrate and on the side opposite to the substrate. An electronic component having an exposed electrode, a metal member located in a direction parallel to the first surface of the substrate with respect to the electronic component and having a thickness of 10 μm or more, the electronic component and the metal member. An insulating layer that covers at least a part, a first portion located on the insulating layer, and a second portion that penetrates the insulating layer and electrically connects the first portion and the electrode of the electronic component. It is a mounting substrate including a conductive layer having.

In the mounting substrate according to the embodiment of the present disclosure, the substrate is provided with a first through hole that overlaps with the metal member when viewed along the normal direction of the first surface of the substrate. The mounting substrate may further include a first metal layer located in the first through hole.

In the mounting substrate according to the embodiment of the present disclosure, the substrate is provided with a second through hole that overlaps with the electronic component when viewed along the normal direction of the first surface of the substrate. The mounting substrate may further include a second metal layer located in the second through hole.

In the mounting substrate according to the embodiment of the present disclosure, a through electrode penetrating the substrate from the first surface to the second surface, the first portion of the conductive layer, and the through electrode penetrating the insulating layer. May further be provided with a connecting member for electrically connecting the above.

In the mounting substrate according to the embodiment of the present disclosure, the through electrode may be electrically connected to the connecting member via a conductive member including conductive particles and a binder.

In the mounting substrate according to the embodiment of the present disclosure, the through electrode may be a part of an inductor.

The mounting substrate according to the embodiment of the present disclosure may further include a capacitor that is electrically connected to the through electrode.

In the mounting substrate according to the embodiment of the present disclosure, the substrate may contain glass.

One embodiment of the present disclosure includes a step of preparing a substrate having a first surface and a second surface located on the opposite side of the first surface, and a step of preparing the substrate on the first surface side of the substrate, which is opposite to the substrate. A step of arranging an electronic component having an electrode exposed on the side and a metal member having a thickness of 10 μm or more, a step of forming an insulating layer that covers the electronic component and the metal member at least partially, and the insulating layer. A step of forming a conductive layer having a first portion located above and a second portion penetrating the insulating layer and electrically connecting the first portion and the electrode of the electronic component. This is a method for manufacturing a mounting board.

In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the substrate includes through electrodes that penetrate the substrate from the first surface to the second surface, and the step of forming the conductive layer is the insulating layer. May include a step of forming a connecting member that electrically connects the first portion of the conductive layer and the through electrode.

One embodiment of the present disclosure includes a step of preparing a support substrate having a support surface, an electronic component having an electrode exposed on the support surface side of the support substrate, and a thickness of 10 μm or more. A step of arranging a structural portion including at least a metal member having the above, a step of joining a substrate having a first surface and a substrate having a second surface located on the opposite side of the first surface to the structural portion, and the support substrate. The step of separating from the structural portion, the step of forming an insulating layer that covers the electronic component and the metal member at least partially, the first portion located on the insulating layer, and the insulating layer are penetrated and described. A method for manufacturing a mounting substrate, comprising a step of forming a conductive layer having a first portion and a second portion for electrically connecting the electrodes of the electronic component.

In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the substrate includes a penetrating electrode that penetrates the substrate from the first surface to the second surface, penetrates the insulating layer, and is electrically connected to the penetrating electrode. The step of forming the conductive layer may further include a step of forming a connecting member to be specifically connected, and the step of forming the conductive layer may include a step of electrically connecting the connecting member and the first portion of the conductive layer.

In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the step of joining the substrate includes a step of joining the through electrode and the connecting member via a conductive paste containing conductive particles and a binder. It may be.

In the method of manufacturing a mounting substrate according to an embodiment of the present disclosure, the arrangement of the metal members may include adhering the metal members with an adhesive.

In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the arrangement of the metal member may include forming the metal member by a plating process.

In the method of manufacturing a mounting substrate according to an embodiment of the present disclosure, the arrangement of the electronic components may include bonding the electronic components with an adhesive.

According to the embodiment of the present disclosure, it is possible to provide a mounting substrate having more excellent heat dissipation.

It is sectional drawing which shows the mounting board by one Embodiment. It is sectional drawing which shows the mounting board which concerns on 1st modification of one Embodiment. It is sectional drawing which shows the mounting board which concerns on the 2nd modification of one Embodiment. It is sectional drawing which shows the mounting board which concerns on the 3rd modification of one Embodiment. It is sectional drawing which shows the mounting board which concerns on the 4th modification of one Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 1st Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 1st Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 1st Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment. It is a figure which shows the manufacturing process of the mounting board which concerns on 2nd Embodiment.

Hereinafter, the configuration of the mounting substrate and the manufacturing method thereof according to the embodiment will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. Further, in the present specification, terms such as "base material", "base material", "sheet" and "film" are not distinguished from each other based only on the difference in designation. For example, "base material" and "base material" are concepts including members that can be called sheets or films. Furthermore, as used herein, terms such as "parallel" and "orthogonal" and values of length and angle that specify the shape and geometric conditions and their degrees are bound by strict meaning. Instead, the interpretation will include the range in which similar functions can be expected. Further, in the drawings referred to in the present embodiment, the same parts or parts having similar functions are designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted. Further, the dimensional ratio of the drawing may differ from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

Mounting Board First, the configuration of the mounting board 10 according to the embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing a mounting substrate 10 according to the present embodiment.

As shown in FIG. 1, the mounting substrate 10 includes a substrate 12, an electronic component 50, an insulating layer 34, a conductive layer 31, and a metal member 61. Hereinafter, each component of the mounting board 10 will be described.

(substrate)
The substrate 12 has a first surface 13 of the upper side D1 in the thickness direction D of the substrate, and a second surface 14 located on the opposite side, that is, the lower side of the first surface 13. The first surface 13 of the upper D1 is a surface on which the above-mentioned electronic component 50 is mounted. The expressions "upper side" and "lower side" are merely expressions based on the relative positional relationship between the first surface 13 and the second surface 14, and include the posture of the mounting substrate 10 during manufacturing and use. Is not limited to.

The substrate 12 may be an organic substrate or an inorganic substrate as long as it has a certain insulating property, but preferably contains an inorganic material having a certain insulating property. For example, the substrate 12 includes a glass substrate, a quartz substrate, a sapphire substrate, a resin substrate, a silicon substrate, a silicon carbide substrate, an alumina (Al ₂ O ₃ ) substrate, an aluminum nitride (AlN) substrate, a diriconia oxide (ZrO ₂ ) substrate, and the like. Alternatively, these substrates are laminated. The substrate 12 may partially include a substrate made of a conductive material such as an aluminum substrate or a stainless steel substrate.

The substrate 12 more preferably contains glass, and is even more preferably a glass substrate. Examples of the glass include glass such as non-alkali glass. Non-alkali glass is glass that does not contain alkaline components such as sodium and potassium. Non-alkali glass contains, for example, boric acid instead of the alkaline component. The non-alkali glass also contains, for example, alkaline earth metal oxides such as calcium oxide and barium oxide. Examples of non-alkali glass include EN-A1 manufactured by Asahi Glass and Eagle XG manufactured by Corning. Since the substrate 12 contains glass, the insulating property and heat stability of the substrate are improved.

The thickness of the substrate 12 is not particularly limited, but for example, it is preferable to use the substrate 12 having a thickness of 100 μm or more and 800 μm or less. More preferably, the substrate 12 has a thickness of 200 μm or more and 600 μm or less. By setting the thickness of the substrate 12 to 100 μm or more, it is possible to suppress an increase in the deflection of the substrate 12. Therefore, it is possible to prevent the substrate 12 from becoming difficult to handle at the time of manufacturing the mounting substrate 10. Further, by setting the thickness of the substrate 12 to 800 μm or less, when the first through hole 20 or the like described later is formed in the substrate 12, the time required for forming the first through hole 20 or the like becomes long and the mounting substrate 10 is formed. It is possible to suppress an increase in the manufacturing cost of the product. The "thickness" means the dimension of the target component in the normal direction of the first surface 13 of the substrate 12.

(Electronic components)
The electronic component 50 is located on the first surface 13 and transmits or receives an electric signal through the conductive layer 31. The electronic component 50 has a main body 51 and an electrode 52 located on the upper side D1 of the main body 51.

The main body 51 is, for example, a device chip such as an LSI (Large-Scale Integration), a MEMS (Micro Electro Mechanical Systems), and a discrete component. MEMS is an electronic device in which mechanical element parts, sensors, actuators, electronic circuits, etc. are integrated on one substrate. The main body 51 includes at least a base material made of silicon or the like.

The electrode 52 is exposed on the upper side D1 of the electronic component 50. Therefore, the electrode 52 can function as a terminal for electrically connecting the electronic component 50 to another component.

As shown in FIG. 1, the electronic component 50 may be in contact with the first surface 13 on the end surface of the lower D2 of the electronic component 50 (hereinafter, also referred to as “lower end surface of the electronic component 50”). Alternatively, although not shown, other components such as an insulating layer may be present between the lower end surface of the electronic component 50 and the first surface 13. When the lower end surface of the electronic component 50 is adhered to the first surface 13, it is adhered to the first surface 13 via, for example, an adhesive material (not shown) such as a diaphragm material.

The thickness of the electronic component 50 is not particularly limited, but is, for example, 50 μm or more and 100 μm or less.

(Insulation layer)
The insulating layer 34 is a layer that at least partially covers the electronic component 50 and the metal member 61 and has an insulating property. The material of the insulating layer 34 is not particularly limited as long as it has insulating properties, but organic materials such as polyimide, epoxy, acrylic resin, and polybenzoxazole (PBO) can be used.

(Conductive layer)
The conductive layer 31 is a conductive layer located at least partially on the upper D1 of the insulating layer 34 or the electronic component 50. The conductive layer 31 functions as wiring for transmitting an electric signal transmitted or received by, for example, an electronic component 50 or the like.

The conductive layer 31 has a first portion 311 located on the upper side D1 of the insulating layer 34, and a second portion 312 penetrating the insulating layer 34 up to the electrode 52 of the electronic component 50. One end of the second portion 312 in the thickness direction D is connected to the first portion 311 and the other end is connected to the electrode 52.

The configuration of the conductive layer 31 is not particularly limited as long as the conductive layer 31 has conductivity. For example, the conductive layer 31 may be composed of a single conductive layer, or may be conductive. It may contain a plurality of layers having. For example, the conductive layer 31 may have a seed layer located on the insulating layer 34 and a plating layer located on the seed layer. The seed layer is a conductive layer that serves as a base for growing the plating layer by precipitating metal ions in the plating solution during the electrolytic plating step of forming the plating layer by the electrolytic plating treatment. As the material of the seed layer, a conductive material such as copper can be used. The material of the seed layer may be the same as or different from the material of the plating layer. For example, the seed layer may be a laminated film in which titanium and copper are laminated in this order, chromium, or the like. The seed layer may be formed by, for example, a sputtering method, a vapor deposition method, an electroless plating method, or the like. The plating layer is a conductive layer formed by electroplating. The plating layer contains copper. The plating layer may contain an alloy of copper and a metal other than copper, for example, gold, silver, platinum, rhodium, tin, aluminum, nickel, chromium, or copper and a metal other than copper. It may be laminated.

(Metal member)
When the mounting board 10 according to the present embodiment is viewed along the normal direction of the first surface 13 of the board 12, the end portion 10e of the mounting board 10 and the end of the electronic component 50 in the in-plane direction of the first surface 13 Wiring such as the above-mentioned conductive layer 31 exists between the portion 50e and the portion 50e. The wiring such as the conductive layer 31 is a wiring that can be formed by using a semiconductor wafer process. Therefore, the thickness and length of the wiring can be reduced as compared with the case where the electronic component 50 and other components are electrically connected by wire bonding or bumps. As a result, the wiring density can be increased.

On the other hand, the presence of the wiring outside the end 50e of the electronic component 50 means that a region exists between the end 50e of the electronic component 50 and the end 10e of the mounting board 10. Therefore, the heat generated by the electronic component 50 is less likely to be released from the end 10e of the mounting board 10 as compared with the case where the end 50e of the electronic component 50 is closer to the end 10e of the mounting board 10. Further, in the present embodiment, the substrate 12 preferably contains glass. On the other hand, the thermal conductivity of glass is lower than that of silicon commonly used in semiconductor wafers. Therefore, the contribution of the substrate 12 to the heat conduction in the in-plane direction of the first surface 13 is small. Also in this respect, the heat generated by the electronic component 50 is less likely to be released from the end portion 10e of the mounting substrate 10.

In view of such a problem, in the present embodiment, it is proposed to provide the metal member 61 on the mounting substrate 10. The metal member 61 is located in a direction parallel to the first surface 13 of the substrate 12 with respect to the electronic component 50. Here, "positioned in a parallel direction" means that the metal member 61 at least partially overlaps with the electronic component 50 when viewed along the in-plane direction of the first surface 13 of the substrate 12. do.

By arranging the metal member 61, the thermal conductivity of the portion of the mounting substrate 10 on which the metal member 61 is arranged becomes high, and the heat generated by the electronic component 50 can easily escape in the in-plane direction of the first surface 13. Therefore, the heat dissipation of the mounting substrate can be improved. Further, by arranging the metal member 61 in a direction parallel to the first surface 13 of the substrate 12 with respect to the electronic component 50, the thickness of the mounting substrate 10 is increased by the thickness of the metal member 61. It can be suppressed. From the above, it is possible to improve the heat dissipation of the mounting board 10 while suppressing the overall thickness of the mounting board 10.

As shown in FIG. 1, the metal member 61 may be in contact with the first surface 13 on the end surface of the lower D2 of the metal member 61 (hereinafter, also referred to as “lower end surface of the metal member 61”). Alternatively, although not shown, other components such as an insulating layer may be present between the lower end surface of the metal member 61 and the first surface 13. When the lower end surface of the metal member 61 is adhered to the first surface 13, it is adhered to the first surface 13 via, for example, an adhesive material (not shown) such as a diaphragm material.

As the material of the metal member 61, a material having a higher thermal conductivity than that of the insulating layer 34 is used. For example, the metal member 61 can include at least one of copper, aluminum, silver and iron. In order to further increase the thermal conductivity of the metal member 61, an alumite-treated aluminum foil may be used as the metal member 61. Further, for example, the metal member 61 may be an iron alloy containing nickel. Specific examples of the nickel-containing iron alloy include iron alloys containing nickel of 34% by mass or more and 38% by mass or less, so-called Invar materials, iron alloys containing about 42% by mass of nickel, so-called 42 alloys, and the like. can.

The shortest distance between the metal member 61 and the electronic component 50 in the in-plane direction of the first surface 13 of the substrate 12 is preferably 10 μm or more and 30 μm or less. As a result, the heat generated by the electronic component 50 can be efficiently transferred to the metal member 61.

The metal member 61 has a thickness larger than the thickness of the conductive layer constituting the wiring, and has a thickness of, for example, 10 μm or more. More preferably, the metal member 61 has a thickness of 50 μm or more. Since the metal member 61 has the above thickness, the cross-sectional area of the metal member 61 can be remarkably increased as compared with the wiring. As a result, the thermal resistance of the metal member 61 in the in-plane direction of the first surface 13 of the substrate 12 can be reduced. Therefore, the heat generated by the electronic component 50 can be efficiently transferred in the in-plane direction of the first surface 13 to release the heat to the outside.

It is preferable that the thickness of the metal member 61 does not greatly exceed the thickness of the electronic component 50. The thickness of the metal member 61 is, for example, 150 μm or less, and may be 100 μm or less. Further, preferably, the thickness of the metal member 61 is equal to or less than the thickness of the electronic component 50. As a result, it is possible to prevent the thickness of the entire mounting substrate 10 from increasing due to the provision of the metal member 61.

(1st through hole and 1st metal layer)
The substrate 12 may be provided with a first through hole 20 that overlaps the metal member 61 when viewed along the normal direction of the first surface 13 of the substrate 12. In this case, preferably, a member having a higher thermal conductivity than that of the substrate 12 is provided in the first through hole 20. For example, the first metal layer 62 may be located in the first through hole 20. As a result, even when the thermal conductivity of the substrate 12 is low, for example, when the substrate 12 contains glass, the heat transferred from the electronic component 50 to the metal member 61 is transferred to the substrate 12 via the first metal layer 62. Can be released in the thickness direction D of. Therefore, the heat dissipation of the mounting substrate 10 can be further improved.

The shape of the first through hole 20 will be described. The side wall of the first through hole 20 may extend along the normal direction of the first surface 13 of the substrate 12. Alternatively, the side wall may be widened in a direction deviated from the normal direction of the first surface 13 of the substrate 12, or a part of the side wall may be curved.

Next, the dimensions of the first through hole 20 will be described. The length of the first through hole 20, that is, the dimension of the first through hole 20 in the normal direction of the first surface 13, is equal to the thickness of the substrate 12. The width of the first through hole 20, that is, the dimension of the first through hole 20 in the direction parallel to the first surface 13, is, for example, 40 μm or more and 150 μm or less. Further, the ratio of the length to the width of the first through hole 20, that is, the aspect ratio of the first through hole 20, is, for example, 4 or more and 10 or less.

The number of the first through holes 20 arranged so as to overlap the metal member 61 is determined so that the mounting substrate 10 can have appropriate heat dissipation. For example, in the region of the first surface 13 of the substrate 12 that overlaps with the metal member 61, the density of the first through holes 20 ^{is preferably 9 pieces / mm 2} or more. Further, in order to secure the strength of the substrate 12 and reduce the time and cost required for manufacturing the mounting substrate 10, the first through hole 20 is formed in the region of the first surface 13 of the substrate 12 that overlaps with the metal member 61. The density is preferably 50 pieces / mm ² or less.

The shape of the first metal layer 62 is not particularly limited as long as the mounting substrate 10 can have appropriate heat dissipation. For example, as shown in FIG. 1, the first metal layer 62 may be filled in the first through hole 20. That is, the first metal layer 62 may form a so-called filled via. Further, the thickness of the first metal layer 62 is smaller than the width of the first through hole 20, and therefore, there may be a space inside the first through hole 20 in which the first metal layer 62 does not exist. That is, the first metal layer 62 may form a so-called conformal via. When the shape of the first metal layer 62 is a conformal via, the space inside the first through hole 20 may be hollow or may be filled with an organic layer or the like. When the space inside the first through hole 20 is filled with an organic layer, it may be filled with the same organic material used to form the insulating layer 34.

Although not shown in FIG. 1, the first metal layer 62 may extend from the side wall of the first through hole 20 to the first surface 13 or the second surface 14 of the substrate 12.

Similar to the conductive layer 31, the first metal layer 62 may include a seed layer and a plating layer that are laminated in order from the side wall side of the first through hole 20. The material constituting the first metal layer 62 may be the same as the material of the conductive layer 31.

(Effect of this embodiment)
In the mounting substrate 10 according to the present embodiment, there is a region between the end portion 50e of the electronic component 50 and the end portion 10e of the mounting substrate 10 where components such as a conductive layer and an insulating layer can be located. do. Therefore, the wiring or the like electrically connected to the electrode 52 of the electronic component 50 is connected to the region between the end portion 50e of the electronic component 50 and the end portion 10e of the mounting substrate 10 by using the above-mentioned conductive layer 31 or the like. Can be provided in. In this case, the wiring can be miniaturized by forming the conductive layer 31 using the semiconductor wafer process. As a result, the density of wiring can be increased as compared with the case where an electrical connection between the electronic component 50 and other components is realized by using wire bonding or the like.

Further, in the mounting substrate 10 according to the present embodiment, the electrode 52 of the electronic component 50 is exposed on the upper side D1 of the electronic component 50. Therefore, the electrode 52 of the electronic component 50 can be electrically connected to the conductive layer 31 without using bumps. As a result, the electronic component 50 can be easily mounted on the substrate 12.

Further, the mounting substrate 10 according to the present embodiment includes a metal member 61 located in a direction parallel to the first surface 13 of the substrate 12 with respect to the electronic component 50. As a result, the heat generated by the electronic component 50 can be easily dissipated in the in-plane direction of the first surface 13 while suppressing the overall thickness of the mounting substrate 10. As a result, the heat dissipation of the mounting substrate 10 can be improved.

Further, according to the mounting substrate 10 according to the present embodiment, the heat released through the metal member 61 can be further released to the thickness direction D of the substrate 12 via the first metal layer 62. As a result, the heat dissipation of the mounting substrate 10 can be further improved.

(First modification of the mounting board)
Next, a first modification of the above-described embodiment will be described. FIG. 2 is a cross-sectional view showing the mounting substrate 10 according to the first modification.

As shown in FIG. 2, in the mounting substrate 10 of the first modification, the substrate 12 has a second through hole 21 that overlaps with the electronic component 50 when viewed along the normal direction of the first surface 13. It is provided. The second metal layer 63 is located in the second through hole 21.

The shape, size and number of the second through holes 21 and the shape of the second metal layer 63 may be the same as those of the first through holes 20 and the first metal layer 62, respectively.

Similar to the conductive layer 31, the second metal layer 63 may include a seed layer and a plating layer that are laminated in order from the side wall side of the second through hole 21. The material constituting the second metal layer 63 may be the same as the material that can be used for the conductive layer 31.

According to the first modification, even when the thermal conductivity of the substrate 12 is low, for example, when the substrate 12 contains glass, the heat generated from the electronic component 50 is transferred through the second metal layer 63. It can be released in the thickness direction D of the substrate 12. Therefore, the heat dissipation of the mounting substrate 10 can be further improved.

(Second modification of the mounting board)
Next, a second modification of the above-described embodiment will be described. FIG. 3 is a cross-sectional view showing the mounting substrate 10 according to the second modification.

As shown in FIG. 3, in the mounting substrate 10 of the second modification, the through electrode 23 penetrating the substrate 12 and the through electrode 23 penetrating the insulating layer 34 and the first portion 311 of the conductive layer 31 and the through electrode 23 are electrically connected. It is provided with a connecting member 32 to be specifically connected.

The shape and dimensions of the third through hole 22 and the shape and material of the through electrode 23 are not particularly limited as long as the through electrode 23 has conductivity. For example, the third through hole 22 and the through electrode 23 may have the same shape and material as the first through hole 20 and the first metal layer 62, respectively.

Similar to the conductive layer 31, the through electrode 23 may include a seed layer and a plating layer that are laminated in order from the side wall side of the third through hole 22. The material constituting the through electrode 23 may be the same as the material of the conductive layer 31.

Similar to the conductive layer 31, the connecting member 32 may include a seed layer and a plating layer that are sequentially laminated on the upper D1 of the insulating layer 34. The material constituting the second metal layer 63 may be the same as the material of the conductive layer 31.

The through silicon via 23 may be electrically connected to the connecting member 32 via a conductive member containing at least conductive particles and a binder (not shown in FIG. 3). The conductive member is a member formed by solidifying the conductive paste described later.

(Third modification example of mounting board)
Next, as a third modification of the above-described embodiment, an example in which the through silicon via 23 shown in the second modification constitutes a part of the inductor will be described. FIG. 4 is a cross-sectional view showing the mounting substrate 10 according to the third modification. FIG. 4 is a cross-sectional view corresponding to the AA cross section of FIG.

As shown in FIG. 4, in the mounting substrate 10 of the third modification, the conductive layer 31, the through silicon via 23, and the second surface first conductive layer 41 located on the second surface 14 side of the substrate 12 have a spiral shape. It is connected so as to form the structure of. That is, the through electrode 23 constitutes the inductor 17 together with the conductive layer 31 and the second surface first conductive layer 41 located on the second surface 14 side of the substrate 12.

The second surface first conductive layer 41 is a layer having conductivity located on the second surface 14 side of the substrate 12. At least a part of the first conductive layer 41 on the second surface is electrically connected to the through electrode 23. The second surface first conductive layer 41 may have a portion that is not electrically connected to the through electrode 23.

The second surface first conductive layer 41 may include a seed layer and a plating layer sequentially laminated on the second surface 14 of the substrate 12, similarly to the conductive layer 31. The material constituting the second surface first conductive layer 41 may be the same as the material of the conductive layer 31.

In the third modification, as shown in FIG. 4, the metal member 61 has a direction D5 in which the third through holes 22 in which the through electrodes 23 constituting the inductor 17 are located on the first surface 13 are arranged and a direction D6 orthogonal to the direction D5. It is preferable to spread in each of the above. This makes it easier for the heat generated by the inductor 17 to escape, and the heat dissipation of the mounting substrate 10 can be improved.

According to the third modification, since the inductor 17 and the electronic component 50 can be electrically connected via the conductive layer 31, the electronic component 50 can be easily mounted on the substrate 12 having the inductor 17. can. Further, by providing the metal member 61, the heat generated by the electronic component 50 and the inductor 17 can be easily dissipated in the in-plane direction of the first surface 13, and the heat dissipation of the mounting substrate 10 can be improved.

(Fourth modification of the mounting board)
Next, a fourth modification of the above-described embodiment will be described. FIG. 5 is a cross-sectional view showing the mounting substrate 10 according to the fourth modification.

As shown in FIG. 5, in the fourth modification, the mounting substrate 10 includes a capacitor 15 electrically connected to the through electrode 23.

The capacitor 15 is located on the second surface 14 side of the substrate 12. The capacitor 15 is, for example, a capacitor having a MIM (Metal-Insulator-Metal) structure. In the example of FIG. 5, the capacitor 15 is arranged at a position substantially opposite to that of the electronic component 50 with respect to the substrate 12. The position of the capacitor 15 is not limited to the aspect of FIG. 5, and is, for example, a position deviated from the position of the lower D2 of the second surface 14 opposite to the electronic component 50 in the surface direction along the second surface 14. May be good. Further, the capacitor 15 may be located on the first surface 13 side of the substrate 12.

The capacitor 15 is, for example, electrically connected to the through electrode 23, has a second surface first conductive layer 41 forming an electrode located on the substrate 12 side, a second surface inorganic layer 42 forming an insulator, and a lower portion. It may have a second surface and a second conductive layer 43 that form an electrode located farther from the substrate 12 than the electrode.

The second surface inorganic layer 42 is located on the lower side D2 with respect to the second surface first conductive layer 41, contains an inorganic material, and has an insulating property. The second surface inorganic layer 42 may have a portion other than the insulator of the capacitor 15.

As the inorganic material of the second surface inorganic layer 42, a silicon nitride such as SiN can be used. In addition, as an example of the inorganic material of the second surface inorganic layer 42, silicon oxide, aluminum oxide, tantalum pentoxide and the like can be mentioned. The second surface inorganic layer 42 may be composed of a single layer or may be composed of a plurality of layers.

The second surface inorganic layer 42 may be formed by, for example, a method such as plasma CVD or sputtering. Further, the second surface inorganic layer 42 may be processed into a size and shape suitable for the capacitor 15 by, for example, reactive ion etching.

The second surface second conductive layer 43 is a layer having conductivity located on the lower side D2 with respect to the second surface inorganic layer 42. The second surface second conductive layer 43 may have a portion other than the electrodes of the capacitor 15.

The second surface second conductive layer 43 may include a seed layer and a plating layer sequentially laminated on the lower D2 of the second surface inorganic layer 42, similarly to the conductive layer 31. The material constituting the second surface second conductive layer 43 may be the same as the material of the conductive layer 31.

According to the fourth modification, since the capacitor 15 and the electronic component 50 can be electrically connected via the through electrode 23 and the conductive layer 31, the electronic component 50 can be easily attached to the substrate 12 having the capacitor 15. Can be installed. Further, by providing the metal member 61, the heat generated by the electronic component 50 and the capacitor 15 can be easily dissipated in the in-plane direction of the first surface 13, and the heat dissipation of the mounting substrate 10 can be improved.

Manufacturing Method of Mounting Board The manufacturing method of the mounting board 10 will be described below.

Method for Manufacturing a Mounting Board According to the First Embodiment First, a method for manufacturing a mounting board according to the first embodiment will be described with reference to FIGS. 6 to 8. Here, an example of manufacturing the mounting substrate 10 shown in FIG. 1 will be described.

(Board preparation process)
FIG. 6 is a cross-sectional view showing a method of manufacturing the mounting substrate 10 according to the present embodiment. First, the substrate 12 is prepared. Here, as shown in FIG. 6, the substrate 12 provided with the first through hole 20 and the first metal layer 62 is prepared. The first through hole 20 and the first metal layer 62 can be formed by, for example, the following method.

First, a resist layer is provided on at least one of the first surface 13 and the second surface 14. After that, an opening is provided in the resist layer at a position corresponding to the first through hole 20.

Next, by processing the substrate 12 at the opening of the resist layer, the first through hole 20 can be formed in the substrate 12 as shown in FIG. As a method for processing the substrate 12, a dry etching method such as a reactive ion etching method or a deep digging reactive ion etching method, a wet etching method, or the like can be used.

The first through hole 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, the resist layer may not be provided. As the laser for laser processing, an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like can be used. When the Nd: YAG laser is adopted, a fundamental wave having a wavelength of 1064 nm, a second harmonic having a wavelength of 532 nm, a third harmonic having a wavelength of 355 nm, and the like can be used.

Further, laser irradiation and wet etching can be appropriately combined. Specifically, first, a alteration layer is formed in a region of the substrate 12 where the first through hole 20 should be formed by laser irradiation. Subsequently, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. As a result, the first through hole 20 can be formed in the substrate 12. In addition, the first through hole 20 may be formed in the substrate 12 by a blast treatment of spraying an abrasive on the substrate 12.

After forming the first through hole 20, as shown in FIG. 6, a first metal layer 62 is formed on the side wall of the first through hole 20. Specifically, a seed layer is formed on the side wall by a sputtering method, a vapor deposition method, an electroless plating method, or the like. After forming the seed layer, if there is a region intended not to provide the first metal layer 62, a resist layer is formed on the seed layer in the region. After forming the resist layer, the plating layer is formed on the seed layer not covered by the resist layer by electrolytic plating. Next, the resist layer is removed. Then, the portion of the seed layer on which the resist layer was formed is removed by wet etching. As a result, the first metal layer 62 including the seed layer and the plating layer can be formed inside the first through hole 20 and the like. After the electrolytic plating step, a step of annealing the plating layer may be carried out.

Further, although not shown in FIG. 6, the first metal layer 62 may extend from the side wall of the first through hole 20 to the first surface 13 or the second surface 14 of the substrate 12.

Further, although not shown in FIG. 6, the shape of the first metal layer 62 may be a conformal via. That is, there may be a space inside the first through hole 20 in which the first metal layer 62 does not exist. In this case, an organic layer may be formed inside the first through hole 20. The organic layer can be formed, for example, by the following steps.

After forming the first metal layer 62, a film containing a resin layer for forming the organic layer is arranged on the first surface 13 side and the second surface 14 side of the substrate 12. Next, the resin layer is pushed into the first through hole 20 by pressurizing the film. After that, the resin layer pushed into the first through hole 20 is cured by irradiating the resin layer with light or the like. Further, the unnecessary portion of the resin layer is removed. In this way, an organic layer can be formed inside the first through hole 20. The step of forming the organic layer inside the first through hole 20 may be carried out after the step of arranging the electronic component 50 and the metal member 61, which will be described later. In this case, the organic layer inside the first through hole 20 and the insulating layer 34 that at least partially covers the electronic component 50 and the metal member 61 may be formed at the same time using the same material.

Although FIG. 6 shows an example in which the substrate 12 of the mounting substrate 10 shown in FIG. 1 is prepared, the present invention is not limited to this, and the substrate 12 of the mounting substrate 10 shown in FIG. 2 or FIG. 3 is prepared. You may. The second through hole 21 and the second metal layer 63 of the mounting substrate 10 shown in FIG. 2, and the third through hole 22 and the through electrode 23 shown in FIG. 3 form the first through hole 20 and the first metal layer 62. It can be formed by a method similar to the method.

(Placement process of electronic parts and metal parts)
FIG. 7 is a cross-sectional view showing a method of manufacturing the mounting substrate 10 according to the present embodiment following FIG. After forming the first metal layer 62, as shown in FIG. 7, the electronic component 50 and the metal member 61 are arranged on the first surface 13 of the substrate 12.

[Arrangement of electronic components]
The method of arranging the electronic component 50 is not particularly limited, but may include a step of adhering the electronic component 50 with an adhesive.

For example, first, for example, a film-shaped diaphragm material is arranged as an adhesive at the arrangement position of the electronic component 50. Next, the electronic component 50 is placed at the arrangement position with the circuit surface including the electrode 52 facing up toward the upper side D1. As a result, the electronic component 50 can be temporarily fixed on the first surface 13 by the adhesive force of the diaphragm material.

[Arrangement of metal members]
The method of arranging the metal member 61 is not particularly limited, but may include a step of adhering the metal member 61 with an adhesive, or may include a step of forming the metal member 61 by a plating process.

When the metal member 61 is adhered to the substrate 12 with an adhesive, the metal member whose thickness has been adjusted in advance can be used, so that it is possible to prevent the thickness of the metal member from deviating from the design.

When the metal member 61 is formed by the plating process, another member such as wiring may be formed on the first surface 13 at the same time as the metal member 61.

(Insulation layer forming process)
After arranging the electronic component 50 and the metal member 61, the insulating layer 34 is formed on the first surface 13, the electronic component 50, or the metal member 61, as shown in FIG. Further, a first insulating layer through hole 34a is formed so as to penetrate the insulating layer 34 in the thickness direction D up to the electrode 52 of the electronic component 50.

The insulating layer 34 and the first insulating layer through hole 34a can be formed by, for example, the following method. First, a film having a photosensitive layer containing an organic material and a base material is attached to the first surface 13 side of the substrate 12. Next, the film is exposed and developed. As a result, the insulating layer 34 composed of the photosensitive layer of the film and having the first insulating layer through hole 34a formed can be formed on the first surface 13 side of the substrate 12.

(Process of forming conductive layer)
After forming the insulating layer 34, as shown in FIG. 1, a conductive layer 31 including a first portion 311 located on the insulating layer 34 and a second portion 312 penetrating the insulating layer 34 is formed. The conductive layer 31 may be formed by laminating the seed layer and the plating layer in the same manner as the method used for forming the first metal layer 62.

As shown in FIG. 3, when the substrate 12 includes a through electrode, the conductive layer 31 is a connecting member that penetrates the insulating layer 34 and electrically connects the first portion 311 of the conductive layer 31 and the through electrode. It may be formed at the same time as the first portion 311 and the second portion 312 as a part of.

By the above steps, the mounting substrate 10 shown in FIG. 1 is obtained. According to the mounting substrate manufacturing method of the present embodiment, by providing the metal member 61, the heat generated by the electronic component 50 can easily escape in the in-plane direction of the first surface 13, and the mounting substrate 10 having more excellent heat dissipation. Can be provided.

Method for manufacturing a mounting board according to a second embodiment As a method for manufacturing a mounting board according to the first embodiment described above, an electronic component 50, a metal member 61, and insulation are provided on a first surface 13 of a board 12. An example in which the layer 34 and the conductive layer 31 are arranged in order is shown. In the method for manufacturing a mounting substrate according to the second embodiment, first, the electronic component 50 and the metal member 61 are formed on the support surface 73 of the support substrate 71, and then the electronic component 50 and the metal member 61 are supported. By transferring from the substrate 71 to the substrate 12, a mounting substrate 10 including the substrate 12, the electronic component 50, and the metal member 61 is obtained. Hereinafter, a method for manufacturing a mounting substrate according to the present embodiment will be described with reference to FIGS. 9 to 14. Here, an example of manufacturing the mounting substrate 10 shown in FIG. 3 will be described.

(Preparation process of support substrate)
FIG. 9 is a cross-sectional view showing a method of manufacturing the mounting substrate 10 according to the present embodiment. First, a support substrate 71 having a support surface 73 is prepared. The material of the support substrate 71 is arbitrary as long as the electronic component 50 and the metal member 61 can be appropriately supported. For example, the material of the support substrate 71 may be the same as the material of the substrate 12.

(Structural part forming process)
After preparing the support substrate 71, as shown in FIG. 9, an electronic component 50 and a metal member 61 having an electrode 52 exposed on the support substrate 71 side are arranged on the support surface 73 side of the support substrate 71.

Components other than the electronic component 50 and the metal member 61 may be further provided on the support surface 73 side of the support substrate 71. For example, a part of the insulating layer 34 that partially covers the electronic component 50 and the metal member 61 may be formed on the support surface 73 side of the support substrate 71. Further, as shown in FIG. 10, the insulating layer 34 may be formed so as to fill the gap between the electronic component 50 and the metal member 61. In the following description, a plurality of components provided on the support surface 73 side of the support substrate 71, including at least the electronic component 50 and the metal member 61, which are later transferred from the support substrate 71 side to the substrate 12 side. The element is also referred to as a structural unit 60.

When the structural portion 60 includes an insulating layer 34 located in the gap between the electronic component 50 and the metal member 61, the bonding surface between the structural portion 60 and the substrate 12 is formed in a step described later in which the structural portion 60 is bonded to the substrate 12. Since it becomes wider, the substrate 12 can be joined more firmly to the structural portion 60. Further, although not shown, even if the thickness of the electronic component 50 and the metal member 61 are different, the structural portion is formed by forming the insulating layer 34 on the upper D3 with respect to the electronic component 50 or the metal member 61. The surface of the upper D3 of the 60 can be flattened, and the substrate 12 can be more firmly bonded to the structural portion 60 in the step of joining the substrate 12.

As a method of forming a part of the insulating layer 34 on the support surface 73 side of the support substrate 71, the insulating layer 34 is formed on the first surface 13 of the substrate 12 in the mounting substrate manufacturing method according to the first embodiment. A method similar to the method of forming on the electronic component 50 or the metal member 61 can be used.

(Forming process of connecting member)
Further, the connecting member 32 is formed as shown in FIG. 9 before and after the step of arranging the electronic component 50 and the metal member 61, or at the same time as the step. For example, the connecting member 32 is attached to the support surface of the support substrate 71 by the same method as the method of forming the first metal layer 62 on the side wall of the first through hole 20 in the method of manufacturing the mounting substrate according to the first embodiment. It can be formed on 73.

(Board preparation process)
Further, as shown in FIG. 10, a substrate 12 having a first surface 13 and a second surface 14 located on the opposite side of the first surface is prepared. The substrate 12 may be provided with a first through hole 20 and a first metal layer 62 so as to overlap the metal member 61 when viewed along the normal direction of the first surface 13 of the substrate 12. Further, the substrate 12 may include a third through hole 22 and a through electrode 23 that penetrates the substrate 12 from the first surface 13 to the second surface 14.

(Substrate joining process)
After preparing the substrate 12, as shown in FIGS. 11 and 12, a joining step of joining the substrate 12 to the structural portion 60 is performed.

As shown in FIG. 11, the joining step may include a step of joining the through electrode 23 and the connecting member 32 via the conductive paste 81 containing the conductive particles and the binder. By including this step, the substrate 12 is bonded to the structural portion 60, the conductive member is formed by the conductive paste 81, and the through electrode 23 is electrically connected to the connecting member 32 via the conductive member. be able to.

The conductive paste contains at least conductive particles and a binder, and may contain a solvent, additives and the like, if necessary. The conductive particles need only have conductivity, and specifically, metal particles can be used. Examples of the metal used for the metal particles include copper, silver, and alloys using these. As the conductive particles, a plurality of types of metal particles may be used in combination. Further, a resin can be used for the binder. Examples of the resin used for the binder include an epoxy resin and the like.

(Separation process of support substrate)
After the joining step of the substrate 12, the support substrate 71 is separated from the structural portion 60 as shown in FIG. Here, the figures after FIG. 13 are displayed by reversing the drawings from those in FIG. 12. The specific method for separating the support substrate 71 is not particularly limited, but for example, the adhesive strength between the structural portion 60 and the support substrate 71 is made lower than the adhesive strength between the structural portion 60 and the substrate 12, and then the support is supported. It can be separated by peeling off the substrate 71. Specifically, in the step of forming the structural portion 60 on the support substrate 71, a heat-removable temporary adhesive sheet is interposed between the support substrate 71 and the structural portion 60, and the temporary adhesive sheet is placed in the separation step. It can be separated by heating to the peeling temperature to reduce the adhesive force between the structural portion 60 and the support substrate 71, and then peeling off the support substrate 71. In this case, the peeling temperature is set so that the components of the structural portion 60 such as the connecting member 32 are not damaged.

(Insulation layer forming process)
After the separation step of the support substrate 71, as shown in FIG. 14, an insulating layer 34 that at least partially covers the electronic component 50 and the metal member 61 is formed. For example, the insulating layer 34 can be formed by the same method as the method for forming the insulating layer 34 in the method for manufacturing the mounting substrate according to the first embodiment.

As shown in FIG. 13, when the structural portion 60 includes a part of the insulating layer 34, as shown in FIG. 14, the upper side of the insulating layer 34, the electronic component 50, and the metal member 61 of the structural portion 60. An insulating layer 34 is further formed on D1.

(Process of forming conductive layer)
After forming the insulating layer 34, as shown in FIG. 3, a conductive layer 31 including a first portion 311 located on the insulating layer 34 and a second portion 312 penetrating the insulating layer 34 is formed. The conductive layer 31 may be formed by laminating the seed layer and the plating layer in the same manner as the method for forming the first metal layer 62 in the method for manufacturing the mounting substrate according to the first embodiment.

By the above steps, the mounting substrate 10 shown in FIG. 3 is obtained. Also in the mounting substrate manufacturing method of the present embodiment, by providing the metal member 61, the heat generated by the electronic component 50 can easily escape in the in-plane direction of the first surface 13, and the mounting substrate 10 having more excellent heat dissipation can be obtained. Can be provided.

Although some modifications to the above-described embodiments have been described, it is naturally possible to apply a plurality of modifications in combination as appropriate.

10 Mounting board 12 Board 13 First surface 14 Second surface 15 Capacitor 17 Inductor 20 First through hole 21 Second through hole 22 Third through hole 23 Through electrode 31 Conductive layer 311 First part 312 Second part 32 Connection member 34 Insulation layer 34a First insulation layer through hole 34b Second insulation layer through hole 41 Second surface First conductive layer 42 Second surface Inorganic layer 43 Second surface Second conductive layer 50 Electronic component 51 Main body 52 Electrode 60 Structural part 61 Metal member 62 First metal layer 63 Second metal layer 71 Support substrate 73 Support surface 81 Conductive paste

Claims (14)

A substrate having a first surface and a second surface located on the opposite side of the first surface,
An electronic component located on the first surface side of the substrate and having an electrode exposed on the side opposite to the substrate.
A metal member located in a direction parallel to the first surface of the substrate with respect to the electronic component and having a thickness of 10 μm or more.
An insulating layer that at least partially covers the electronic component and the metal member,
A conductive layer having a first portion located on the insulating layer and a second portion penetrating the insulating layer and electrically connecting the first portion and the electrode of the electronic component.
Through electrodes that penetrate the substrate from the first surface to the second surface,
When viewed along the normal direction of the first surface of the substrate, it penetrates the insulating layer located between the metal member and the electronic component, and the first portion of the conductive layer and the through electrode. A mounting board comprising a connecting member for electrically connecting and. The substrate is provided with a first through hole that overlaps the metal member when viewed along the normal direction of the first surface of the substrate.
The mounting substrate according to claim 1, wherein the mounting substrate further includes a first metal layer located in the first through hole. The substrate is provided with a second through hole that overlaps with the electronic component when viewed along the normal direction of the first surface of the substrate.
The mounting substrate according to claim 1 or 2, wherein the mounting substrate further includes a second metal layer located in the second through hole. The mounting substrate according to any one of claims 1 to 3, wherein the through electrode is electrically connected to the connecting member via a conductive member including conductive particles and a binder. The mounting substrate according to any one of claims 1 to 4, wherein the through electrode is a part of an inductor. The mounting substrate according to any one of claims 1 to 5, further comprising a capacitor electrically connected to the through electrode. The mounting substrate according to any one of claims 1 to 6 , wherein the substrate contains glass. It is a method of manufacturing a mounting board.
A step of preparing a substrate having a first surface and a second surface located on the opposite side of the first surface, and
A step of arranging an electronic component having an electrode exposed on the side opposite to the substrate and a metal member having a thickness of 10 μm or more on the first surface side of the substrate.
A step of forming an insulating layer that at least partially covers the electronic component and the metal member,
A step of forming a conductive layer having a first portion located on the insulating layer and a second portion penetrating the insulating layer and electrically connecting the first portion and the electrode of the electronic component. and, with a,
The substrate includes through electrodes that penetrate the substrate from the first surface to the second surface.
The step of forming the conductive layer penetrates the insulating layer located between the metal member and the electronic component when viewed along the normal direction of the first surface of the substrate, and the conductive layer is formed. A method for manufacturing a mounting substrate, which comprises a step of forming a connecting member for electrically connecting the first portion and the through electrode. The process of preparing a support substrate with a support surface and
A step of arranging an electronic component having an electrode exposed on the side of the support substrate and a structural portion including at least a metal member having a thickness of 10 μm or more on the support surface side of the support substrate.
A step of joining a substrate having a first surface and a second surface located on the opposite side of the first surface to the structural portion.
The step of separating the support substrate from the structural part and
A step of forming an insulating layer that at least partially covers the electronic component and the metal member,
A step of forming a conductive layer having a first portion located on the insulating layer and a second portion penetrating the insulating layer and electrically connecting the first portion and the electrode of the electronic component. And, a method of manufacturing a mounting board. The substrate includes through electrodes that penetrate the substrate from the first surface to the second surface.
A step of forming a connecting member that penetrates the insulating layer and electrically connects to the through electrode is further provided.
The method for manufacturing a mounting substrate according to claim 9 , wherein the step of forming the conductive layer includes a step of electrically connecting the connecting member and the first portion of the conductive layer. The method for manufacturing a mounting substrate according to claim 10 , wherein the step of joining the substrates includes a step of joining the through electrode and the connecting member via a conductive paste containing conductive particles and a binder. The method for manufacturing a mounting substrate according to any one of claims 8 to 11 , wherein the arrangement of the metal member includes adhering the metal member with an adhesive. The method for manufacturing a mounting substrate according to any one of claims 8 to 12 , wherein the arrangement of the metal member includes forming the metal member by a plating process. The method for manufacturing a mounting substrate according to any one of claims 8 to 13 , wherein the arrangement of the electronic components includes adhering the electronic components with an adhesive.

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