JP6928810B2 - 側壁イメージ転写の方法 - Google Patents

側壁イメージ転写の方法 Download PDF

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JP6928810B2
JP6928810B2 JP2019514202A JP2019514202A JP6928810B2 JP 6928810 B2 JP6928810 B2 JP 6928810B2 JP 2019514202 A JP2019514202 A JP 2019514202A JP 2019514202 A JP2019514202 A JP 2019514202A JP 6928810 B2 JP6928810 B2 JP 6928810B2
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substrate
plasma
gas
process gas
excited
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JP2019517743A5 (https=
JP2019517743A (ja
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ランジャン，アロック
ディー． シェルパ，ソナム
ディー． シェルパ，ソナム
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2019514202A 2016-05-29 2017-05-26 側壁イメージ転写の方法 Active JP6928810B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662342993P 2016-05-29 2016-05-29
US62/342,993 2016-05-29
PCT/US2017/034868 WO2017210141A1 (en) 2016-05-29 2017-05-26 Method of sidewall image transfer

Publications (3)

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JP2019517743A JP2019517743A (ja) 2019-06-24
JP2019517743A5 JP2019517743A5 (https=) 2020-04-30
JP6928810B2 true JP6928810B2 (ja) 2021-09-01

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JP2019514202A Active JP6928810B2 (ja) 2016-05-29 2017-05-26 側壁イメージ転写の方法

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US (1) US10373828B2 (https=)
JP (1) JP6928810B2 (https=)
KR (1) KR102347402B1 (https=)
TW (1) TWI680499B (https=)
WO (1) WO2017210141A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018044727A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
WO2018044713A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
WO2018156985A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
WO2018156975A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning
KR102455355B1 (ko) * 2018-01-15 2022-10-18 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 산화에 대한 아르곤 추가
JP7025952B2 (ja) * 2018-02-16 2022-02-25 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP2019165090A (ja) * 2018-03-19 2019-09-26 東芝メモリ株式会社 半導体装置の製造方法および半導体製造装置
US10867804B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning method for semiconductor device and structures resulting therefrom
US10629451B1 (en) * 2019-02-01 2020-04-21 American Air Liquide, Inc. Method to improve profile control during selective etching of silicon nitride spacers

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109760A (ja) * 1991-10-18 1993-04-30 Seiko Epson Corp 半導体装置
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
KR100322545B1 (ko) * 1999-02-10 2002-03-18 윤종용 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US9658765B2 (en) * 2008-07-31 2017-05-23 Northrop Grumman Systems Corporation Image magnification system for computer interface
US20100267237A1 (en) * 2009-04-20 2010-10-21 Advanced Micro Devices, Inc. Methods for fabricating finfet semiconductor devices using ashable sacrificial mandrels
US20110223770A1 (en) * 2010-03-15 2011-09-15 Lam Research Corporation Nitride plasma etch with highly tunable selectivity to oxide
WO2012015575A1 (en) * 2010-07-29 2012-02-02 Conocophillips Company Metal impurity and high molecular weight components removal of biomass derived biocrude
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9263283B2 (en) 2011-09-28 2016-02-16 Tokyo Electron Limited Etching method and apparatus
US8809169B2 (en) * 2011-09-30 2014-08-19 Tokyo Electron Limited Multi-layer pattern for alternate ALD processes
KR101276258B1 (ko) * 2011-11-21 2013-06-20 피에스케이 주식회사 반도체 제조 장치 및 반도체 제조 방법
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US9257293B2 (en) 2013-03-14 2016-02-09 Applied Materials, Inc. Methods of forming silicon nitride spacers
US9269590B2 (en) * 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9318343B2 (en) * 2014-06-11 2016-04-19 Tokyo Electron Limited Method to improve etch selectivity during silicon nitride spacer etch
US20150371865A1 (en) * 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
US9406522B2 (en) 2014-07-24 2016-08-02 Applied Materials, Inc. Single platform, multiple cycle spacer deposition and etch
US20160181116A1 (en) * 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9484202B1 (en) * 2015-06-03 2016-11-01 Applied Materials, Inc. Apparatus and methods for spacer deposition and selective removal in an advanced patterning process

Also Published As

Publication number Publication date
WO2017210141A1 (en) 2017-12-07
JP2019517743A (ja) 2019-06-24
TW201812848A (zh) 2018-04-01
US10373828B2 (en) 2019-08-06
US20170345671A1 (en) 2017-11-30
TWI680499B (zh) 2019-12-21
KR20190004365A (ko) 2019-01-11
KR102347402B1 (ko) 2022-01-04

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