JP6904681B2 - 超純粋ガス環境において気相から多層有機薄膜をプリンティングするための装置及び方法 - Google Patents
超純粋ガス環境において気相から多層有機薄膜をプリンティングするための装置及び方法 Download PDFInfo
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/08—Embodiments of or processes related to ink-jet heads dealing with thermal variations, e.g. cooling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
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- B41J2202/01—Embodiments of or processes related to ink-jet heads
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Description
特許請求されている発明は、大学・企業の共同研究契約の下記の当事者:University of Michigan、Princeton University、University of Southern California、及びUniversal Display Corporationの理事らの1又は複数によって、その利益になるように、及び/又は関連して為されたものである。該契約は、特許請求されている発明が為された日付以前に発効したものであり、特許請求されている発明は、該契約の範囲内で行われる活動の結果として為されたものである。
110 基板
115 アノード
120 正孔注入層
125 正孔輸送層
130 電子ブロッキング層
135 発光層
140 正孔ブロッキング層
145 電子輸送層
150 電子注入層
155 保護層
160 カソード
162 第一の導電層
164 第二の導電層
170 バリア層
200 反転させたOLED、デバイス
210 基板
215 カソード
220 発光層
225 正孔輸送層
230 アノード
Claims (11)
- プリントヘッドを含む有機プリンティング堆積システムであって、
前記プリントヘッドが、
前記プリンティング堆積システムによって基板上に堆積される有機材料源と流体連通する搬送アパチャを含むノズルブロックと、
前記ノズルブロックの下部から見たときに、前記搬送アパチャの上部又は下部に配置される1つ以上のシールドガス分配チャネルと、
前記プリントヘッドの動作中に、前記搬送アパチャから発生する非凝縮ガス流が排出アパチャによって捕捉されるように、前記搬送アパチャと隣り合って配置される1つ以上の排出チャネルとを含み、
前記1つ以上のシールドガス分配チャネルのそれぞれが、前記プリントヘッドが動作するチャンバ環境に由来する材料が、前記ノズルブロックの前記排出アパチャに到達することを防ぐシールドガス流を提供するように配置されており、
前記ノズルブロックのノズルと前記基板の表面との間のフライハイトをアクチュエータで1μm以内に調節することを特徴とする有機プリンティング堆積システム。 - プリントヘッドを含む有機プリンティング堆積システムであって、
前記プリントヘッドが、
前記プリンティング堆積システムによって基板上に堆積される有機材料源と流体連通する搬送アパチャを含むノズルブロックと、
前記ノズルブロックの下部から見たときに、前記搬送アパチャの上部又は下部に配置される1つ以上のシールドガス分配チャネルと、
前記プリントヘッドの動作中に、前記搬送アパチャから発生する非凝縮ガス流が排出アパチャによって捕捉されるように、前記搬送アパチャと隣り合って配置される1つ以上の排出チャネルとを含み、
前記1つ以上のシールドガス分配チャネルのそれぞれが、前記プリントヘッドが動作するチャンバ環境に由来する材料が、前記ノズルブロックの前記排出アパチャに到達することを防ぐシールドガス流を提供するように配置されており、
さらに、前記基板と前記プリントヘッドとの間に配置される冷却プレートを含み、前記冷却プレートは、複数のシールドガスポートを含み、前記シールドガスポートは、前記有機プリンティング堆積システムが動作すると、前記基板に対して法線方向にシールドガスを吐出し、
前記ノズルブロックのノズルと前記基板の表面との間のフライハイトをアクチュエータで調節することを特徴とする有機プリンティング堆積システム。 - 前記プリントヘッドが、ワンピースユニットとして前記チャンバから取り外し可能である請求項1及び2のいずれかに記載の有機プリンティング堆積システム。
- 複数のシールドガスアパチャを更に含み、各シールドガスアパチャが、前記プリントヘッドの動作中に、前記排出アパチャによって取り込まれる全てのガスが、前記搬送アパチャ又は前記シールドガスアパチャの1つ以上のいずれかに由来するように、前記基板と前記プリントヘッドとの間の空間にシールドガスを吐出する請求項1及び2のいずれかに記載の有機プリンティング堆積のシステム。
- 1つの堆積チャンバに取り付けられた複数のプリントヘッドを含む請求項1及び2のいずれかに記載の有機プリンティング堆積システム。
- 前記冷却プレートが、前記プリントヘッドの少なくとも一部が通って延びる1つ以上のアパチャを更に含む請求項2に記載の有機プリンティング堆積システム。
- 1つの堆積チャンバ内で少なくとも2つの薄膜層を基板上に堆積する方法であって、前記少なくとも2つの薄膜層の各層は、他と組成が異なる又は各膜が一部分だけ他と重なるように空間的にオフセットされており、前記方法は、
前記堆積チャンバ内に配置される第1のノズルブロックの第1の搬送アパチャから、第1の堆積混合物を基板に向けて吐出することと、
第2のノズルブロックの第2の搬送アパチャから、第2の堆積混合物を前記基板に向けて吐出することと、
第1のシールドガスアパチャから第1のシールドガスを吐出することと、
前記ノズルブロックにおける第1の排出アパチャを介して、前記堆積チャンバから材料を除去することとを含み、
前記第1のシールドガスが、チャンバ環境に由来する材料が前記排出アパチャに到達することを防ぐと共に、前記第1の搬送アパチャから吐出される材料が、前記第2の搬送アパチャと前記基板との間の領域を少なくとも含む領域に入ることを防ぎ、
前記ノズルブロックのノズルと前記基板の表面との間のフライハイトをアクチュエータで1μm以内に調節することを特徴とする方法。 - 1つの堆積チャンバ内で少なくとも2つの薄膜層を基板上に堆積する方法であって、前記少なくとも2つの薄膜層の各層は、他と組成が異なる又は各膜が一部分だけ他と重なるように空間的にオフセットされており、前記方法は、
前記堆積チャンバ内に配置される第1のノズルブロックの第1の搬送アパチャから、第1の堆積混合物を基板に向けて吐出することと、
第2のノズルブロックの第2の搬送アパチャから、第2の堆積混合物を前記基板に向けて吐出することと、
第1のシールドガスアパチャから第1のシールドガスを吐出することと、
前記ノズルブロックにおける第1の排出アパチャを介して、前記堆積チャンバから材料を除去することとを含み、
前記第1のシールドガスが、チャンバ環境に由来する材料が前記排出アパチャに到達することを防ぐと共に、前記第1の搬送アパチャから吐出される材料が、前記第2の搬送アパチャと前記基板との間の領域を少なくとも含む領域に入ることを防ぎ、
さらに、前記基板と前記プリントヘッドとの間に配置される冷却プレートがあって、前記冷却プレートは、複数のシールドガスポートを含み、前記シールドガスポートは、前記方法が実行すると、前記基板に対して法線方向にシールドガスを吐出し、
前記ノズルブロックのノズルと前記基板の表面との間のフライハイトをアクチュエータで調節することを特徴とする方法。 - 前記ノズルブロックの周りのシールドガス流の全量が、前記排出アパチャを通る排出ガス流の全量よりも多い請求項7及び8のいずれかに記載の方法。
- 前記ノズルブロックにおける1つ以上の排出アパチャを通る排出ガス流の全量が、前記ノズルブロックにおける1つ以上の搬送アパチャを通る堆積混合物流の全量よりも多い請求項7及び8のいずれかに記載の方法。
- 前記1つの堆積チャンバにおける環境圧力が、10Torr〜1000Torrの範囲である請求項7及び8のいずれかに記載の方法。
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |