JP6891456B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device.

In a semiconductor device, a laminated substrate in which a semiconductor element, an insulating plate, a circuit plate, and a heat radiating plate are laminated, and a laminated substrate in which a lead frame is insert-molded and the semiconductor element is mounted are housed and sealed with a sealing resin. It has a case and is used for power conversion such as switching.

In a semiconductor device, for example, an external bus bar is joined to a lead frame by welding and used. Further, in a semiconductor device, in addition to such bonding, a test terminal for performing an electrical test of the semiconductor device may be bonded to the lead frame.

Japanese Unexamined Patent Publication No. 2013-258321

In such a semiconductor device, the lead frame is shortened in order to reduce the size and the inductance. At this time, the distance between the welded portion of the bus bar with respect to the lead frame and the case becomes close. Therefore, the heat at the time of welding is easily conducted in the case, the case is melted, the semiconductor device is deformed by the heat, and the semiconductor device is damaged. Further, since the lead frame is shortened, the welding area of the bus bar is reduced, the position accuracy at the time of welding the bus bar is lowered, and welding becomes difficult.

Further, if the lead frame is shortened, the bonding region with respect to the test terminal is also reduced, which makes it difficult to bond the test terminals and makes it difficult to perform an electrical test of the semiconductor device.
The present invention has been made in view of these points, and an object of the present invention is to provide a miniaturized semiconductor device capable of performing an electrical test.

According to one aspect of the present invention, a laminated substrate including a semiconductor element, an insulating plate and a circuit plate formed on the insulating plate and to which the semiconductor element is bonded, and the semiconductor element and the laminated substrate are sealed. and, a sealing resin having a perpendicular side surface to the main surface of the laminated substrate is sealed by the sealing resin one end is connected the the semiconductor element and electrically, to the main surface An internal connection portion extending outward from the side surface in parallel, a test connection portion extending vertically upward with respect to the main surface parallel to the side surface outside the side surface, and one end portion of the internal connection portion. It has a flat lead frame including a bent portion formed by bending and connecting the opposite end portion and the lower end portion of the test connection portion and engaging the external connection terminal. A semiconductor device is provided in which the engaging portion is an opening hole formed on the test connecting portion side with respect to the internal connecting portion and the bent portion in a plan view.

According to the disclosed technology, the semiconductor device can be subjected to an electrical test and can be miniaturized.

It is a top view of the semiconductor device of 1st Embodiment. It is a side sectional view of the semiconductor device of 1st Embodiment. It is a side sectional view at the time of mounting of the semiconductor device of 1st Embodiment. It is a top view of the semiconductor device of a reference example. It is a side sectional view of the semiconductor device of a reference example. It is a figure for demonstrating the lead frame of the semiconductor device of 1st Embodiment. It is a figure for demonstrating the lead frame of the semiconductor device of 2nd Embodiment. It is a figure for demonstrating the lead frame of the semiconductor device of 3rd Embodiment. It is a figure for demonstrating the lead frame of the semiconductor device of 4th Embodiment. It is a figure for demonstrating the lead frame of the semiconductor device of 5th Embodiment. It is a side sectional view of the semiconductor device of 6th Embodiment.

Hereinafter, embodiments will be described with reference to the drawings.
[First Embodiment]
First, the semiconductor device of the first embodiment will be described with reference to FIGS. 1 and 2.

FIG. 1 is a top view of the semiconductor device of the first embodiment, and FIG. 2 is a side sectional view of the semiconductor device of the first embodiment.
Note that FIG. 2 is a cross-sectional view taken along the alternate long and short dash line XX of FIG.

The semiconductor device 100 includes semiconductor elements 111 and 112, a laminated substrate 120, a heat radiating plate 130, and a resin case 140 in which lead frames 150a and 150b are integrally molded. Further, in the semiconductor device 100, the semiconductor elements 111 and 112 housed in the resin case 140 and the laminated substrate 120 are sealed with the sealing resin 180. In FIG. 1, the description of the sealing resin 180 is omitted, and the semiconductor elements 111, 112, the laminated substrate 120, and the like are shown.

The semiconductor elements 111 and 112 include switching elements such as an IGBT (Insulted Gate Bipolar Transistor) and a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), for example. Such semiconductor elements 111 and 112 are provided with, for example, a drain electrode (or collector electrode) as a main electrode on the back surface, and a gate electrode and a source electrode (or emitter electrode) as main electrodes on the front surface, respectively. ing. Further, the semiconductor elements 111 and 112 include diodes such as SBD (Schottky Barrier Diode) and FWD (Free Wheeling Diode). Such semiconductor elements 111 and 112 are provided with a cathode electrode as a main electrode on the back surface and an anode electrode as a main electrode on the front surface, respectively.

Although two semiconductor elements 111 and 112 are shown in FIGS. 1 and 2, one or three or more semiconductor elements may be provided as needed.
The laminated substrate 120 has a circuit board 121 and an insulating plate 122 in which the circuit board 121 is laminated on the front surface.

The circuit board 121 is a conductive layer constituting a predetermined circuit made of a conductive material such as copper having excellent conductivity.
The insulating plate 122 is made of a highly thermally conductive ceramic such as aluminum nitride or silicon nitride, which has excellent thermal conductivity.

As such a laminated substrate 120, for example, a metal insulating substrate, a DCB (Direct Copper Bonding) substrate, and an AMB (Active Metal Blazed) substrate can be used. The laminated substrate 120 can conduct the heat generated by the semiconductor elements 111 and 112 to the heat radiating plate 130 side via the circuit plate 121 and the insulating plate 122.

The heat radiating plate 130 is made of a metal such as copper or aluminum having excellent thermal conductivity, or an alloy containing copper, aluminum or the like as a main component. The heat radiating plate 130 dissipates heat conducted from the laminated substrate 120 to the outside to cool the semiconductor device 100.

The resin case 140 is formed by pouring a heated resin into a predetermined mold and insert-molding the lead frames 150a and 150b.
Examples of the resin include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polyamide (PA) resin, acrylonitrile butadiene styrene (ABS) resin, liquid crystal polymer (LCP), and polyether ether ketone (PEEK) resin. , Polybutylene succinate (PBS) resin and the like are used.

Such a resin case 140 is, for example, a box shape having a rectangular shape when viewed from above, and includes an opening in which the opening 141 on the upper surface side in FIG. 2 and the opening 143 on the lower surface side in FIG. 2 communicate with each other. It has a frame shape, and stepped portions 142a and 142b are formed on a pair of opposite sides at the boundary between the opening 141 and the opening 143, respectively.

A laminated substrate 120 on which semiconductor elements 111 and 112 are mounted and a heat radiating plate 130 are attached to the opening 143 by an adhesive (not shown). That is, the resin case 140 houses the laminated substrate 120 on which the semiconductor elements 111 and 112 are mounted and the heat radiating plate 130 in the opening 143. At this time, the back surface side of the heat radiating plate 130 projects from the opening 143 of the resin case 140 to the lower side in FIG.

The resin case 140 may be provided with a convex portion between the opening 141 and the opening 143, and the laminated substrate 120 may be attached to the side surface of the convex portion on the opening 143 side with an adhesive.
The lead frames 150a and 150b are attached to each of the pair of side surfaces on which the stepped portions 142a and 142b of the resin case 140 are formed, and one end thereof is inside the opening 141, and the stepped portion 142a, Each is arranged on 142b.

Such lead frames 150a, 150b include internal connection portions 151a, 151b including one end, test connection portions 154a, 154b including the other end, internal connection portions 151a, 151b, and test connection portions 154a, 154b. It is composed of parts with bent portions 152a and 152b that are bent and connected.

The internal connection portions 151a and 151b include bonding region portions 151a1 and 151b1 whose one end is arranged on the stepped portions 142a and 142b in the opening 141 of the resin case 140. Further, the internal connection portions 151a and 151b are provided with extension portions 151a2 and 151b2 extending outward of the resin case 140 perpendicularly to the side wall surfaces 144a and 144b of the resin case 140.

The side wall surfaces 144a and 144b will be described as side wall surfaces 144 when they are not particularly distinguished.
The bonding region portion 151a1 on the stepped portion 142a of the internal connecting portion 151a is electrically connected to the circuit board 121 of the laminated substrate 120 via the bonding wires 171 to 174. That is, the internal connection portion 151a is electrically connected to the main electrodes on the back surfaces of the semiconductor elements 111 and 112 via the circuit board 121 of the laminated substrate 120 and the bonding wires 171 to 174.

The bonding region portion 151b1 on the stepped portion 142b of the internal connecting portion 151b is electrically connected to the main electrodes on the front surfaces of the semiconductor elements 111 and 112 via bonding wires 161 to 164.

The test connection portion 154a is integrated with the internal connection portion 151a via a bending portion 152a on the outside of the resin case 140, and is electrically connected. Similarly, the test connection portion 154b is also integrated with the internal connection portion 151b via the bending portion 152b on the outside of the resin case 140, and is electrically connected. In FIG. 2, the bent portions 152a and 152b are bent so that the other ends of the test connecting portions 154a and 154b are on the upper side in FIG. Not limited to this case, the bent portions 152a and 152b may be bent so that the other ends of the test connecting portions 154a and 154b are on the lower side in FIG.

Further, such test connection portions 154a and 154b are locations where test terminals for performing an electrical test are joined. The surfaces of the test connection portions 154a and 154b are plated with one or more conductive materials such as gold, silver, copper, tin, titanium, and nickel in order to improve the bondability with the test terminals (for example, by soldering). It has been processed. The plating treatment may be applied only to the outer surface of the bent portion 152 (the outermost surface of the semiconductor device 100). Further, the test connecting portions 154a and 154b need to have a length that allows a joining region to which the test terminals can be joined can be obtained. The lengths of the test connection portions 154a and 154b will be described later. It should be noted that this plating process is not performed on the bonding region portions 151a1 and 151b1 on at least the stepped portions 142a and 142b in the internal connecting portions 151a and 151b. This is because the adhesiveness between the conductive material of the plating treatment and the sealing resin 180 is not good. Therefore, when the bonding regions 151a1 and 151b1 on the stepped portions 142a and 142b of the internal connecting portions 151a and 151b are plated and then the inside of the opening 141 of the resin case 140 is sealed with the sealing resin 180. There is a possibility that a gap may be formed between the bonding region portions 151a1, 151b1 of the internal connection portions 151a, 151b and the sealing resin 180. If water or the like accumulates in such a gap, it may cause a failure of the semiconductor device 100 or the like.

Further, engaging portions 153a and 153b are formed on the bent portions 152a and 152b over the extending portions 151a2 and 151b2 of the internal connecting portions 151a and 151b and the test connecting portions 154a and 154b. For example, a bus bar (connection terminal) is connected to the engaging portions 153a and 153b from the outside, and the connected bus bar is electrically connected to the lead frames 150a and 150b. The engaging portions 153a and 153b have, for example, an opening hole, a notch, or the like, and have a shape that can be connected to the bus bar.

Further, in the first embodiment, such lead frames 150a and 150b show a case where one extension portion 151a2 and 151b2 are extended from the internal connection portions 151a and 151b, respectively. The semiconductor device 100 is not limited to this case, and for example, two or more stretched portions 151a2 and 151b2 may be stretched, respectively. Further, the widths of the two or more stretched portions 151a2 and 151b2 may be different from each other.

The lead frames 150a and 150b will be described as the lead frame 150 when they are not particularly distinguished.
In such a semiconductor device 100, the openings 141 and 143 of the resin case 140 are sealed with the sealing resin 180. As a result, the semiconductor elements 111, 112, the front surface side of the laminated substrate 120 on which the semiconductor elements 111, 112 are mounted, and the internal connection portions 151a, 151b of the lead frames 150a, 150b (bonding region portions 151a1, 151b1). And the bonding wires 161 to 164 and 171 to 174 are sealed with the sealing resin 180. Such a sealing resin 180 is, for example, any one thermosetting resin such as a maleimide-modified epoxy resin, a maleimide-modified phenol resin, and a maleimide resin. Alternatively, a gel or the like is used as the sealing resin 180.

Further, in the semiconductor device 100, the internal connection portions 151a and 151b of the lead frames 150a and 150b are shortened, and the length W is, for example, between the test connection portions 154a and 154b of the lead frames 150a and 150b.

Further, in the semiconductor device 100, it is possible to improve the heat dissipation efficiency of the semiconductor device 100 by installing a cooling fin, a cooling device by water cooling, or the like on the heat radiating plate 130 on the back surface of the resin case 140.

The semiconductor device 100 having such a configuration is subjected to an electrical test before being mounted on, for example, an external device. Therefore, in the semiconductor device 100, the test terminals are joined to the test connection portions 154a and 154b of the lead frames 150a and 150b. At this time, since the test connection portions 154a and 154b are plated and have a length that can secure a joining region for joining the test terminals, the test terminals can be reliably joined. .. Further, in the electrical test of the semiconductor device 100, various currents are passed from a small current to a large current. For this reason, in particular, the test connection portions 154a and 154b only secure a joining region for joining the test terminals so that the test can be appropriately performed even when a large current larger than the current expected to be normally used is passed. Instead, a volume (length) that can withstand a large current is required. When the thickness of the lead frames 150a and 150b is 0.4 mm or more and 1 mm or less, the lead frames 150a and 150b are connected to the lead frames 150a and 150b from the bent portions 152a and 152b of the test connection portions 154a and 154b of the lead frames 150a and 150b. The length to the tip requires, for example, about 6 mm or more.

Next, a case where the semiconductor device 100 is actually mounted on the external device after the electrical test of the semiconductor device 100 will be described with reference to FIG.
FIG. 3 is a side sectional view of the semiconductor device according to the first embodiment when mounted.

Note that FIG. 3 is a cross-sectional view of the semiconductor device 100 mounted on the external device at the same position as in FIG.
For example, the external device 10 has a circuit board 20 in which a predetermined circuit (not shown) is configured on the front surface, and bus bars 30a and 30b electrically connected to the circuit of the circuit board 20. It is assumed that it is.

The sealing resin 180 side of the semiconductor device 100 is opposed to such an external device 10, and the bus bars 30a and 30b are connected to the engaging portions 153a and 153b of the lead frames 150a and 150b, respectively. In this case, the convex portions of the upper ends of the bus bars 30a and 30b are inserted into the opening holes of the engaging portions 153a and 153b of the lead frames 150a and 150b of the semiconductor device 100 from the lower side in FIG. 3 to connect them. The tip of the bus bar 30a through which the engaging portion 153a of the lead frame 150a is inserted is welded at the welded portions 41a and 42a from above in FIG. In the same manner as described above, the tip of the bus bar 30b through which the engaging portion 153b of the lead frame 150b is inserted is welded at the welded portions 41b and 42b from above in FIG.

At the time of welding, it is also possible to attach heat dissipation mechanisms 300a and 300b such as a heat sink to the test connection portions 154a and 154b of the lead frames 150a and 150b. As a result, the heat generated by welding is radiated to the outside by the heat radiating mechanisms 300a and 300b, and the heat generated by welding is prevented from being conducted into the semiconductor device 100 via the internal connection portions 151a and 151b of the lead frames 150a and 150b. Can be done.

Further, the test connection portions 154a and 154b of the lead frames 150a and 150b function as guides for connecting the bus bars 30a and 30b to the engagement portions 153a and 153b from the lower side to the upper side in FIG. In order for the test connection portions 154a and 154b of the lead frames 150a and 150b to function as guides, the angles α of the test connection portions 154a and 154b with respect to the vertical direction in FIG. 3 are about 84 ° or more and about 89 ° or less. Is desirable.

The bus bars 30a and 30b will be described as the bus bar 30 when they are not particularly distinguished.
Here, a semiconductor device as a reference example for the semiconductor device 100 will be described with reference to FIGS. 4 and 5.

FIG. 4 is a top view of the semiconductor device of the reference example, and FIG. 5 is a side sectional view of the semiconductor device of the reference example.
FIG. 5 is a side sectional view taken along the alternate long and short dash line XX of FIG.

In the semiconductor device 1000 described below, the same configurations as those of the semiconductor device 100 are designated by the same reference numerals, and detailed description of these configurations will be omitted.
Similar to the semiconductor device 100, the semiconductor device 1000 includes semiconductor elements 111 and 112, a laminated substrate 120, a heat radiating plate 130, and a resin case 140. Further, in the semiconductor device 1000, similarly to the semiconductor device 100, the semiconductor elements 111 and 112 housed in the resin case 140 and the laminated substrate 120 are sealed with the sealing resin 180.

On the other hand, the lead frames 50a and 50b are insert-molded in the resin case 140 of the semiconductor device 1000.
One end of the lead frames 50a and 50b is arranged on the stepped portions 142a and 142b of the resin case 140, and the other end thereof extends outward perpendicularly to the side wall surfaces 144a and 144b of the resin case 140. The lead frames 50a and 50b are composed of internal connection portions 51a and 51b and test connection portions 52a and 52b.

In the semiconductor device 1000 provided with such lead frames 50a and 50b, for example, before the semiconductor device 1000 is shipped, test terminals are joined to the test connection portions 52a and 52b of the lead frames 50a and 50b to supply electricity to the semiconductor device 1000. Test is conducted.

When the electrical test is completed, the test connection portions 52a and 52b are cut from the lead frames 50a and 50b at the time of shipment. As a result, the length of the semiconductor device 1000 becomes a length W as in the first embodiment, and miniaturization and low inductance are achieved.

However, in the semiconductor device 1000, the lead frames 50a and 50b from which the test connection portions 52a and 52b are cut have a configuration corresponding to the engaging portions 153a and 153b, unlike the lead frames 150a and 150b of the semiconductor device 100. Absent.

Therefore, when such a semiconductor device 1000 is mounted on the external device 10 shown in FIG. 3, for example, the internal connection portions 51a, 51b of the lead frames 50a, 50b (the side wall surfaces 144a, 144b of the resin case 140). It is necessary to join the bus bars 30a and 30b by welding from the to the end portions of the internal connection portions 51a and 51b).

At this time, since the lengths of the lead frames 50a and 50b are shortened, the distance between the bus bars 30a and 30b and the side wall surfaces 144a and 144b becomes short. Therefore, the heat during welding of the bus bars 30a and 30b is conducted inside the semiconductor device 1000. As a result, the resin case 140 of the semiconductor device 1000 may be deformed and the resin case 140 may be melted. Further, the sealing resin 180 may be peeled off from the internal connection portions 51a and 51b of the lead frames 50a and 50b, resulting in a gap. When the resin case 140 of the semiconductor device 1000 is deformed, the bonding points of the bonding wires 161 to 164, 171 to 174 with respect to the semiconductor elements 111 and 112, the circuit board 121 or the lead frames 50a and 50b are peeled off in the semiconductor device 1000. Therefore, the semiconductor device 1000 may break down. Further, if a gap is generated, moisture or the like may accumulate in the gap, and the semiconductor device 1000 may break down.

Further, since the lead frames 50a and 50b are shortened to the lengths of the internal connection portions 51a and 51b, the position accuracy is deteriorated to join the bus bars 30a and 30b to the lead frames 50a and 50b by welding, and the welding is difficult. It will be difficult.

Furthermore, if the lead frames 50a and 50b have the lengths of the internal connection portions 51a and 51b from the beginning for miniaturization and low inductance, in addition to the above-mentioned problems such as difficulty in mounting the bus bars 30a and 30b. , The area for attaching the test terminal for the electrical test is also limited. That is, it becomes difficult to connect the test terminals to the lead frames 50a and 50b whose lengths are limited to the internal connection portions 51a and 51b, and it becomes difficult to perform an electrical test of the semiconductor device 1000.

On the other hand, the semiconductor device 100 of the first embodiment has semiconductor elements 111 and 112 and a sealing resin 180 for sealing the semiconductor elements 111 and 112. Further, in the semiconductor device 100, one end (bonding region 151a1, 151b1) sealed by the sealing resin 180 is electrically connected to the semiconductor elements 111, 112, and the outer bent portion 152a of the sealing resin 180, It has lead frames 150a and 150b that are bent at 152b and have engaging portions 153a and 153b formed to which the bus bars 30a and 30b are connected to the bent portions 152a and 152b.

In such a semiconductor device 100, first, the test connection portions 154a and 154b of the lead frames 150a and 150b function as guides when connecting the bus bars 30a and 30b to the engagement portions 153a and 153b. Therefore, the bus bars 30a and 30b can be reliably and easily connected to the engaging portions 153a and 153b of the lead frames 150a and 150b. Further, since the bus bars 30a and 30b are connected to the engaging portions 153a and 153b of the lead frames 150a and 150b, even if the lead frames 150a and 150b (internal connection portions 151a and 151b) are shortened, the bus bars 30a and 30b Can be easily aligned with the lead frames 150a and 150b (internal connection portions 151a and 151b), and can be reliably welded to the lead frames 150a and 150b. Further, at the time of welding, it is easy to install the heat dissipation mechanisms 300a and 300b on the lead frames 150a and 150b (test connection portions 154a and 154b). Therefore, even if the lead frames 150a and 150b (internal connection portions 151a and 151b) are shortened, it is possible to prevent heat during welding from being conducted inside the semiconductor device 100.

Further, the internal connection portions 151a and 151b of the lead frames 150a and 150b are not plated. Therefore, when the inside of the opening 141 of the resin case 140 is sealed with the sealing resin 180, the deterioration of the adhesion between the sealing resin 180 and the internal connecting portions 151a and 151b of the lead frames 150a and 150b is suppressed. The inside of the opening 141 (and the opening 143) can be reliably sealed. Therefore, it becomes possible to prevent the occurrence of failure of the semiconductor device 100 and the like.

Further, the lead frames 150a and 150b are provided with bent portions 152a and 152b to form test connection portions 154a and 154b. For this reason, an area for joining the test terminals is secured, and in particular, the test connection portions 154a and 154b are plated, and the test terminals are securely joined to the lead frames 150a and 150b using solder. It becomes possible to do.

Therefore, the semiconductor device 100 can shorten the lengths of the lead frames 150a and 150b to reduce the size and secure the bonding region of the test terminal.
Here, the details of the engaging portion 153 of the lead frame 150 of the semiconductor device 100 of the first embodiment will be described with reference to FIG.

In the first embodiment, the case where the engaging portion 153 formed in the lead frame 150 is an opening hole and the convex portion 31 is formed at the tip end portion of the bus bar 30 will be described as an example.

FIG. 6 is a diagram for explaining a lead frame of the semiconductor device according to the first embodiment.
6 (A) is a perspective view of the lead frame 150, and FIG. 6 (B) is a side view and a front view of the lead frame 150.

The lead frame 150 is a test in which one end is arranged in the resin case 140, and the internal connection portion 151 extending from the side wall surface 144 of the resin case 140 and the other end are included and plated with a conductive material. It is composed of a part with a connecting part 154. Further, the lead frame 150 is composed of a portion of a bent portion 152 in which the internal connecting portion 151 and the test connecting portion 154 are bent and connected.

Further, an engaging portion 153 is formed on the bent portion 152 over the internal connecting portion 151 and the test connecting portion 154. The engaging portion 153 is a rectangular opening hole as shown in FIG.
The thickness t of such a lead frame 150 is 0.4 mm or more and 1 mm or less, and more preferably 0.4 mm or more and 0.8 mm or less.

The length L1 from the side wall surface 144 of the internal connection portion 151 of the lead frame 150 to the engaging portion 153 is 1 mm or more and 5 mm or less, more preferably 1 mm or more and 3 mm or less. In order to make the semiconductor device 100 as small as possible, it is desired to make the length W (see FIGS. 1 and 2) between the lead frames 150 as small as possible. For this purpose, it is desired that the engaging portion 153 to which the bus bar 30 is connected also approaches the side wall surface 144 as much as possible. However, if the engaging portion 153 is too close to the side wall surface 144, it becomes difficult to weld the bus bar 30 connected to the engaging portion 153. Therefore, the length L1 from the side wall surface 144 of the internal connection portion 151 of the lead frame 150 to the engaging portion 153 needs to be 1 mm or more and 5 mm or less, more preferably 1 mm or more and 3 mm or less.

The length L2 from the side wall surface 144 of the internal connection portion 151 of the lead frame 150 to the test connection portion 154 is 7 mm or less when the length L1 is 1 mm or more and 5 mm or less. The length L2 is 5 mm or less when the length L1 is 1 mm or more and 3 mm or less.

The length L3 of the test connection portion 154 of the lead frame 150 (the length from the end portion of the engaging portion 153 to the end portion of the test connection portion 154) is preferably 6 mm or more. When joining the test terminal to the test connection portion 154 of the lead frame 150, it is necessary to maintain a volume that is resistant to a large current. Therefore, it is necessary to join the test terminal at a position separated from the side wall surface 144 of the resin case 140 to some extent. Therefore, the length L3 of the test connection portion 154 needs to be at least 6 mm or more.

The engaging portion 153 is formed so that both sides of the engaging portion 153 are open to the lead frame 150 to the same extent as the thickness t. When forming the engaging portion 153 on the lead frame 150, at least the thickness t of the lead frame 150 or more is required to maintain the strength of the engaging portion 153.

The convex portion 31 of the bus bar 30 is fitted to the engaging portion 153 formed on the lead frame 150, and the bus bar 30 is welded to the lead frame 150 as described with reference to FIG. As a result, the bus bar 30 can be connected to the engaging portion 153 of the lead frame 150. Further, such a lead frame 150 can secure a bonding region (test connection portion 154) for joining test terminals for performing an electrical test of the semiconductor device 100.

[Second Embodiment]
In the second embodiment, unlike the first embodiment, a lead frame in which an engaging portion having a shape such that one side is open is formed instead of an opening hole and the test connecting portion is bifurcated. This will be described with reference to FIG.

FIG. 7 is a diagram for explaining a lead frame of the semiconductor device according to the second embodiment.
7 (A) is a perspective view of the lead frame 250, and FIG. 7 (B) is a side view and a front view of the lead frame 250.

In the semiconductor device 100, it is assumed that the lead frame 250 is formed in place of the lead frame 150. The length between the lead frames 250 in this case is the length W as in the first embodiment.

Such a lead frame 250 includes an internal connection portion 251 extending from the side wall surface 144 of the resin case 140 and the other end portion by arranging one end portion in the resin case 140 and plating with a conductive material. It is composed of parts with the test connection portions 254a and 254b. Further, the lead frame 250 is composed of a portion of a bent portion 252 in which the internal connecting portion 251 and the test connecting portions 254a and 254b are bent and connected. The bent portion 252 is formed in a U shape by the internal connecting portion 251 and the test connecting portions 254a and 254b in a top view.

The thickness t of such a lead frame 250 is also 0.4 mm or more and 1 mm or less, more preferably 0.4 mm or more and 0.8 mm or less, as in the first embodiment.
Further, the length L1 from the side wall surface 144 of the internal connection portion 251 of the lead frame 250 to the engaging portion 253 is also 1 mm or more and 5 mm or less, more preferably 1 mm, as in the first embodiment. It is 3 mm or less.

The length L2 from the side wall surface 144 of the internal connection portion 251 of the lead frame 250 to the test connection portions 254a and 254b is the same as in the first embodiment when the length L1 is 1 mm or more and 5 mm or less. , 7 mm or less. The length L2 is 5 mm or less when the length L1 is 1 mm or more and 3 mm or less.

The lengths of the test connecting portions 254a and 254b of the lead frame 250 (the length from the end of the engaging portion 253 to the ends of the test connecting portions 254a and 254b) L3 is 6 mm, as in the first embodiment. The above is preferable.

Similar to the first embodiment, the engaging portion 253 is formed so that both sides of the engaging portion 253 are open to the lead frame 250 to the same extent as the thickness t.
The convex portion 31 of the bus bar 30 is fitted to the engaging portion 253 formed on the lead frame 250, and the bus bar 30 is welded to the lead frame 250 as described with reference to FIG. As a result, the bus bar 30 can be connected to the engaging portion 153 of the lead frame 250. Further, such a lead frame 250 can secure a joining region (test connecting portions 254a and 254b) for joining test terminals for performing an electrical test of the semiconductor device 100.

[Third Embodiment]
In the third embodiment, unlike the first embodiment, a case where the engagement portion formed by the notch formed in the lead frame is provided instead of the opening hole will be described with reference to FIG. ..

FIG. 8 is a diagram for explaining a lead frame of the semiconductor device according to the third embodiment.
8 (A) is a perspective view of the lead frame 350, and FIG. 8 (B) is a side view and a front view of the lead frame 350.

In the semiconductor device 100, it is assumed that the lead frame 350 is formed in place of the lead frame 150. The length between the lead frames 350 in this case is the length W as in the first embodiment.

Further, in the third embodiment, an engaging portion 353c composed of notches 353a and 353b formed on both sides of the internal connecting portion 351 of the lead frame 350, the bent portion 352, and the test connecting portion 354 is provided. In addition, a recess 32 is formed at the tip of the bus bar 30.

Such a lead frame 350 includes an internal connection portion 351 extending from the side wall surface 144 of the resin case 140 and the other end portion by arranging one end in the resin case 140 and plating with a conductive material. It is composed of a part with a test connection portion 354 made. Further, the lead frame 350 is composed of a portion of a bent portion 352 in which the internal connecting portion 351 and the test connecting portion 354 are bent and connected. Further, the lead frame 350 includes an engaging portion 353c composed of notches 353a and 353b formed on both sides of the internal connecting portion 351 and the bent portion 352 and the test connecting portion 354.

The thickness t of such a lead frame 350 is also 0.4 mm or more and 1 mm or less, more preferably 0.4 mm or more and 0.8 mm or less, as in the first embodiment.
Further, the length L1 from the side wall surface 144 of the internal connection portion 351 of the lead frame 350 to the notches 353a and 353b is also 1 mm or more and 5 mm or less, more preferably, as in the first embodiment. It is 1 mm or more and 3 mm or less.

The length L2 from the side wall surface 144 of the internal connection portion 351 of the lead frame 350 to the test connection portion 354 is 7 mm when the length L1 is 1 mm or more and 5 mm or less, as in the first embodiment. It is as follows. The length L2 is 5 mm or less when the length L1 is 1 mm or more and 3 mm or less.

The length (length from the bent portion 352 to the end of the test connecting portion 354) L4 of the test connecting portion 354 of the lead frame 350 is preferably 6 mm or more, as in the first embodiment.

The recess 32 of the bus bar 30 is fitted to the engaging portion 353c formed by the notches 353a and 353b formed on both sides of the lead frame 350, and the bus bar 30 is connected to the lead frame 350 as described with reference to FIG. Weld to. As a result, the bus bar 30 can be connected to the engaging portion 353c of the lead frame 350. Further, such a lead frame 350 can secure a bonding region (test connection portion 354) for joining test terminals for performing an electrical test of the semiconductor device 100.

[Fourth Embodiment]
In the fourth embodiment, a lead frame obtained by dividing the lead frame 250 of the second embodiment in half is used as a lead frame, and this case will be described with reference to FIG.

FIG. 9 is a diagram for explaining a lead frame of the semiconductor device according to the fourth embodiment.
9 (A) is a perspective view of the lead frame 450, and FIG. 9 (B) is a side view and a front view of the lead frame 450.

In the semiconductor device 100, it is assumed that the lead frame 450 is formed in place of the lead frame 150. The length between the lead frames 450 in this case is the length W as in the first embodiment.

Further, in the fourth embodiment, an engaging portion 453b composed of a notch 453a formed on one side of the internal connecting portion 451 of the lead frame 450, the bending portion 452, and the test connecting portion 454 is provided. Further, a convex portion 33 is formed at the tip end portion of the bus bar 30.

Such a lead frame 450 includes an internal connection portion 451 extending from the side wall surface 144 of the resin case 140 and the other end portion by arranging one end in the resin case 140 and plating with a conductive material. It is composed of a part with a test connection portion 454. Further, the lead frame 450 is composed of a portion of a bent portion 452 in which the internal connecting portion 451 and the test connecting portion 454 are bent and connected. Further, the lead frame 450 includes an engaging portion 453b formed by a notch 453 formed on one side of the internal connecting portion 451, the bending portion 452, and the test connecting portion 454.

The thickness t of such a lead frame 450 is also 0.4 mm or more and 1 mm or less, more preferably 0.4 mm or more and 0.8 mm or less, as in the first embodiment.
Further, the length L1 from the side wall surface 144 of the internal connection portion 451 of the lead frame 450 to the notch 453a is also 1 mm or more and 5 mm or less, more preferably 1 mm or more, as in the first embodiment. It is 3 mm or less.

The length L2 from the side wall surface 144 of the internal connection portion 451 of the lead frame 450 to the test connection portion 454 is 7 mm when the length L1 is 1 mm or more and 5 mm or less, as in the first embodiment. It is as follows. The length L2 is 5 mm or less when the length L1 is 1 mm or more and 3 mm or less.

The length L4 of the test connection portion 454 of the lead frame 450 (the length from the bending portion 452 to the end portion of the test connection portion 454) is preferably 6 mm or more, as in the first embodiment.

The convex portion 33 of the bus bar 30 is fitted to the engaging portion 453 b formed by the notch 453 a formed on one side of the lead frame 450, and the bus bar 30 is attached to the lead frame 450 as described with reference to FIG. Weld. As a result, the bus bar 30 can be connected to the engaging portion 453b of the lead frame 450. Further, such a lead frame 450 can secure a bonding region (test connection portion 454) for joining test terminals for performing an electrical test of the semiconductor device 100.

[Fifth Embodiment]
In the fifth embodiment, the case of the lead frame 450 in which the notch is formed on the test connection portion side in the lead frame 450 of the fourth embodiment will be described with reference to FIG.

FIG. 10 is a diagram for explaining a lead frame of the semiconductor device according to the fifth embodiment.
10 (A) is a perspective view of the lead frame 550, and FIG. 10 (B) is a side view and a front view of the lead frame 550.

In the semiconductor device 100, it is assumed that the lead frame 550 is formed in place of the lead frame 150. The length between the lead frames 550 in this case is the length W as in the first embodiment.

Further, in the fifth embodiment, an engaging portion 553b formed by a notch 553a formed on one side of the lead frame 550 with the test connecting portion 554 on the tip side is provided, and the tip of the bus bar 30 is provided. A convex portion 33 is formed on the portion.

Such a lead frame 550 includes an internal connection portion 551 extending from the side wall surface 144 of the resin case 140 and the other end portion by arranging one end in the resin case 140 and plating with a conductive material. It is composed of a part with the test connection part 554. Further, the lead frame 550 is composed of a portion of a bent portion 552 in which the internal connecting portion 551 and the test connecting portion 554 are bent and connected. Further, the lead frame 550 includes an engaging portion 553b formed by a notch 553a formed on one side of the test connecting portion 554 on the distal end side.

The thickness t of such a lead frame 550 is also 0.4 mm or more and 1 mm or less, more preferably 0.4 mm or more and 0.8 mm or less, as in the first embodiment.
Further, the length L1 from the side wall surface 144 of the internal connection portion 551 of the lead frame 550 to the notch 553a is also 1 mm or more and 5 mm or less, more preferably 1 mm or more, as in the first embodiment. It is 3 mm or less.

The length L2 from the side wall surface 144 of the internal connection portion 551 of the lead frame 550 to the test connection portion 554 is 7 mm when the length L1 is 1 mm or more and 5 mm or less, as in the first embodiment. It is as follows. The length L2 is 5 mm or less when the length L1 is 1 mm or more and 3 mm or less.

The length (length from the bent portion 552 to the end of the test connecting portion 554) L4 of the test connecting portion 554 of the lead frame 550 is preferably 6 mm or more, as in the first embodiment.

The convex portion 33 of the bus bar 30 is fitted to the engaging portion 553b formed by the notch 553a formed on one side of the lead frame 550, and the bus bar 30 is attached to the lead frame 550 as described with reference to FIG. Weld. As a result, the bus bar 30 can be connected to the engaging portion 553b of the lead frame 550. Further, such a lead frame 550 can secure a bonding region (test connection portion 554) for joining test terminals for performing an electrical test of the semiconductor device 100.

[Sixth Embodiment]
In the sixth embodiment, the case where the semiconductor device 100 in the first to fifth embodiments described above does not have the resin case 140 will be described with reference to FIG.

FIG. 11 is a side sectional view of the semiconductor device according to the sixth embodiment.
Note that FIG. 11 is a cross-sectional view of the semiconductor device 100 of the first embodiment at the same position as in FIG. Further, although the semiconductor device 100 of the first embodiment is given as an example below, the semiconductor device 100 of the second to fifth embodiments can be manufactured in the same manner.

First, a method of manufacturing the semiconductor device 100 according to the first embodiment will be described.
A resin case 140 in which the lead frame 150 is integrally molded, a laminated substrate 120 on which semiconductor elements 111 and 112 are laminated, a heat radiating plate 130, and the like are prepared in advance. The laminated substrate 120 in which the semiconductor elements 111 and 112 and the heat radiating plate 130 are laminated is attached to the opening 143 of the resin case 140 via an adhesive. The internal connection portion 151a (bonding region portion 151a1) and the circuit board 121 of the laminated substrate 120 are electrically connected by bonding wires 171 to 174. Further, the internal connection portion 151b (bonding region portion 151b1) and the main electrode on the front surface of the semiconductor elements 111 and 112 are electrically connected by bonding wires 161 to 164. Then, the sealing resin 180 is injected into the opening 141 of the resin case 140 to seal the semiconductor elements 111 and 112, the laminated substrate 120, and the bonding wires 161 to 164 and 171 to 174.

The semiconductor device 100 is manufactured by the above steps.
On the other hand, in the semiconductor device 100a of the sixth embodiment, first, the lead frame 150, the laminated substrate 120 on which the semiconductor elements 111 and 112 are laminated, the heat radiating plate 130 and the like are prepared in advance.

Next, the lead frame 150 is aligned with the laminated substrate 120 on which the semiconductor elements 111 and 112 are laminated. At this time, the heat radiating plate 130 may be attached to the back surface of the laminated substrate 120, or may be attached to the back surface of the laminated substrate 120 after being sealed with the sealing resin 180 described later.

Next, the internal connection portion 151a (bonding region portion 151a1) and the circuit board 121 of the laminated substrate 120 are electrically connected by bonding wires 171 to 174. Further, the internal connection portion 151b (bonding region portion 151b1) and the main electrode on the front surface of the semiconductor elements 111 and 112 are electrically connected by bonding wires 161 to 164.

Then, the semiconductor elements 111 and 112, the laminated substrate 120, the bonding wires 161 to 164, 171 to 174, and one end of the lead frame 150 are sealed with the sealing resin 180, which is shown in FIG. The semiconductor device 100a is manufactured.

Such a semiconductor device 100a includes semiconductor elements 111 and 112, a laminated substrate 120, a heat radiating plate 130, and lead frames 150a and 150b. Further, in the semiconductor device 100a, the semiconductor elements 111 and 112, the laminated substrate 120, and the bonding wires 161 to 164, 171 and 174 are sealed with the sealing resin 180.

The semiconductor device 100a can similarly include lead frames 250, 350, 450, and 550 in place of the lead frame 150.

100 Semiconductor device 111, 112 Semiconductor element 120 Laminated board 121 Circuit board 122 Insulation board 130 Heat dissipation board 140 Resin case 141,143 Opening 142a, 142b Stepped part 144a, 144b Side wall surface 150a, 150b Lead frame 151a, 151b Internal connection part 151a1 , 151b1 Bonding area 151a2, 151b2 Stretched part 152a, 152b Bending part 153a, 153b Engaging part 154a, 154b Test connection part 161-164,171-174 Bonding wire 180 Sealing resin

Claims (8)

With semiconductor elements
A laminated substrate including an insulating plate and a circuit board formed on the insulating plate and to which the semiconductor element is bonded, and
A sealing resin having a perpendicular side surface to said semiconductor element and to seal the laminated substrate, the principal surface of the multilayer substrate,
One end is sealed by the semiconductor element electrically connected to with the sealing resin, the side surface on the outside of the side and inner connecting portion that extends outwardly from parallel to the side surface to the main surface On the other hand, the test connection portion extending vertically upward with respect to the main surface, the end portion of the internal connection portion on the opposite side of the one end portion, and the lower end portion of the test connection portion are bent and connected to the outside. A flat lead frame including a bent portion formed with an engaging portion with which the connection terminal is engaged , and a flat plate-shaped lead frame.
Have a,
The engaging portion is an opening hole formed on the test connecting portion side with respect to the internal connecting portion and the bent portion in a plan view.
Semiconductor device. The lead frame is attached, the semiconductor element and the laminated substrate are surrounded in the opening, the semiconductor element is housed, and the semiconductor element, the laminated substrate, and the one end portion of the lead frame are in the opening. Further having a case sealed in a sealing resin,
The semiconductor device according to claim 1. The region from the bent portion of the lead frame to the other end portion, which is the upper end portion of the test connection portion, is plated.
The semiconductor device according to claim 2. The length of the lead frame from the end of the case to the bent portion is 1 mm or more and 5 mm or less.
The semiconductor device according to claim 3. The length from the end of the case of the lead frame to the plated portion is 7 mm or less.
The semiconductor device according to claim 4. The length of the lead frame from the end of the case to the bent portion is 1 mm or more and 3 mm or less.
The semiconductor device according to claim 4. The length from the end of the case of the lead frame to the plated portion is 5 mm or less.
The semiconductor device according to claim 6. The length of the opening hole to the side end of the lead frame is equal to or greater than the thickness of the lead frame.
The semiconductor device according to claim 1.

Images