JP6883726B2 - 蛍光体層、波長変換部材、プロジェクタおよび照明装置 - Google Patents
蛍光体層、波長変換部材、プロジェクタおよび照明装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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Description
(蛍光体層および波長変換部材)
図1は、実施の形態1に係る蛍光体層および波長変換部材を示す斜視図。図1に示す実施の形態1に係る波長変換部材10は、プロジェクタ用の蛍光体ホイールであって、円板状の基板11の一方の主面(上面)側に、実施の形態1に係る蛍光体層15を備える。基板11には円弧状の開口11aが設けられている。この円弧状の開口11aと円弧状の蛍光体層15とで円環状のシルエットを形成している。基板11に開口11aが設けられているため、後述する固体光源111aから波長変換部材10へ向けて出射される励起光の一部は、開口11aを介して基板11を通り抜ける。
次に、蛍光体層の厚みと蛍光体粒子の平均粒径ついて詳細に説明する。なお、本願において平均粒径とは、一般的に50%粒子径(D50)、メディアン径と呼ばれるものを意味する。また、蛍光体層の厚みとは、蛍光体層の平均厚みを意味する。
次に、実施の形態1に係るプロジェクタとして、実施の形態1に係る波長変換部材10を備えたプロジェクタについて説明する。
(蛍光体層および波長変換部材)
図9は、実施の形態2に係る蛍光体層および波長変換部材を示す斜視図である。図9に示す実施の形態2に係る波長変換部材20は、照明装置用の波長変換部材であって、基板、接着層、金属反射層、増反射層、実施の形態2に係る蛍光体層25、および、反射防止層を備える。基板21は、矩形板状であって、その一方の主面側に矩形の蛍光体層25を備える。蛍光体層25は、封止層および蛍光体で構成されている。
図10は、実施の形態2に係る照明装置を示す構成図である。図10に示すように、照明装置200は、実施の形態2に係る波長変換部材20と、固体光源210と、光学系220とを備える。
以上、実施の形態1および実施の形態2に係る蛍光体層、波長変換部材、プロジェクタおよび照明装置について説明したが、本開示は、上記実施の形態に限定されない。本開示の趣旨を逸脱しない限り、当業者が思いつく各種変形を上記実施の形態に施したものも、本開示の範囲内に含まれる。
11,21 基板
11a 開口
12 接着層
13 金属反射層
14 増反射層
14a 低屈折率層
14b 高屈折率層
15,25 蛍光体層
15a 封止層
15b 蛍光体粒子
16 反射防止層
16a 第1低屈折率層
16b 高屈折率層
16c 第2低屈折率層
100 プロジェクタ
110 発光装置
111 照射部
111a,210 固体光源
111b コリメートレンズ
111c ヒートシンク
112 ダイクロイックミラー
113 第1反射ミラー
114 第2反射ミラー
115 第3反射ミラー
116 モータ
120 光学ユニット
121 集光レンズ
122 ロッドインテグレータ
123 レンズ群
124 投射レンズ
125 表示素子
130 制御部
200 照明装置
220 光学系
Claims (6)
- 複数の蛍光体粒子を含む蛍光体層であって、
前記複数の蛍光体粒子の平均粒径[μm]をx、前記蛍光体層の厚み[μm]をyとしたときに、
y≧−0.0441x 2 +3.9336x+48.941、
かつ、
y≦−0.1172x2+7.584x+81.148、
かつ、
x≧16.4
の関係を満たすことを特徴とする蛍光体層。 - y≦−0.0675x2+5.8959x+78.475
の関係を満たすことを特徴とする請求項1に記載の蛍光体層。 - y≦−0.0441x2+3.9336x+48.941
の関係を満たすことを特徴とする請求項1又は2に記載の蛍光体層。 - 請求項1から3のいずれかに記載の蛍光体層を備えることを特徴とする波長変換部材。
- 請求項4に記載の波長変換部材を備えることを特徴とするプロジェクタ。
- 請求項4に記載の波長変換部材を備えることを特徴とする照明装置。
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JP2016201715A JP6883726B2 (ja) | 2016-10-13 | 2016-10-13 | 蛍光体層、波長変換部材、プロジェクタおよび照明装置 |
CN201721302378.2U CN207517728U (zh) | 2016-10-13 | 2017-10-10 | 荧光体层、波长转换部件、投影仪以及照明装置 |
DE102017123658.9A DE102017123658A1 (de) | 2016-10-13 | 2017-10-11 | Farbstoffschicht, Wellenlängekonverter, Projektor und Beleuchtungsvorrichtung |
US15/730,477 US10134958B2 (en) | 2016-10-13 | 2017-10-11 | Phosphor layer, wavelength converter, projector, and lighting device |
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JP2016201715A JP6883726B2 (ja) | 2016-10-13 | 2016-10-13 | 蛍光体層、波長変換部材、プロジェクタおよび照明装置 |
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JP2018063858A JP2018063858A (ja) | 2018-04-19 |
JP6883726B2 true JP6883726B2 (ja) | 2021-06-09 |
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US (1) | US10134958B2 (ja) |
JP (1) | JP6883726B2 (ja) |
CN (1) | CN207517728U (ja) |
DE (1) | DE102017123658A1 (ja) |
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CN108803213B (zh) * | 2017-04-27 | 2021-03-19 | 中强光电股份有限公司 | 波长转换滤光模块以及照明系统 |
CN109782516B (zh) * | 2017-11-15 | 2021-10-22 | 中强光电股份有限公司 | 投影机及波长转换元件 |
CN110398875A (zh) | 2018-04-24 | 2019-11-01 | 深圳光峰科技股份有限公司 | 光源系统 |
US10921697B2 (en) | 2018-04-26 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength conversion element, phosphor wheel, light source device, and projection display apparatus |
JP7304507B2 (ja) * | 2018-04-26 | 2023-07-07 | パナソニックIpマネジメント株式会社 | 波長変換素子、蛍光体ホイール、光源装置、及び投写型映像表示装置 |
CN208239722U (zh) * | 2018-05-24 | 2018-12-14 | 中强光电股份有限公司 | 波长转换轮、照明系统及投影装置 |
CN208937894U (zh) * | 2018-10-29 | 2019-06-04 | 中强光电股份有限公司 | 波长转换装置与投影装置 |
JP7200673B2 (ja) * | 2018-12-28 | 2023-01-10 | セイコーエプソン株式会社 | 光源装置及びプロジェクター |
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JP2013162021A (ja) * | 2012-02-07 | 2013-08-19 | Seiko Epson Corp | 波長変換素子、光源装置、及びプロジェクター |
JP6314472B2 (ja) * | 2013-12-20 | 2018-04-25 | 日本電気硝子株式会社 | プロジェクター用蛍光ホイール、その製造方法及びプロジェクター用発光デバイス |
CN105423238B (zh) | 2014-09-11 | 2017-05-10 | 松下知识产权经营株式会社 | 波长变换部件、发光装置、投影机、以及波长变换部件的制造方法 |
JP6489348B2 (ja) | 2014-09-11 | 2019-03-27 | パナソニックIpマネジメント株式会社 | 波長変換部材、発光装置、プロジェクタ、及び、波長変換部材の製造方法 |
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DE102017123658A1 (de) | 2018-04-19 |
JP2018063858A (ja) | 2018-04-19 |
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