JP6862339B2 - 面外熱流束構成のシリコン集積バイバルブ熱電発電機 - Google Patents
面外熱流束構成のシリコン集積バイバルブ熱電発電機 Download PDFInfo
- Publication number
- JP6862339B2 JP6862339B2 JP2017517685A JP2017517685A JP6862339B2 JP 6862339 B2 JP6862339 B2 JP 6862339B2 JP 2017517685 A JP2017517685 A JP 2017517685A JP 2017517685 A JP2017517685 A JP 2017517685A JP 6862339 B2 JP6862339 B2 JP 6862339B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- thermoelectric generator
- metal contacts
- doped
- hill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Micromachines (AREA)
Description
■Huesgen,T.;Wois,P.;Kockmann,N.Design and fabrication of MEMS thermoelectric generators with high temperature efficiency.Sens.Actuators A 2008,145−146,423−429.
■Xie,J.;Lee,C;Feng,H.Design,fabrication and characterization of CMOS MEMS−based thermoelectric power generators.J.Micromech.Syst.2010,19,317−324.
■Wang,Z.;Leonov,V.;Fiorini,P.;van Hoof,C.Realization of a wearable miniaturized thermoelectric generator for human body applications.Sens.Actuators A 2009,156,95−102.
■Wang,Z.;Fiorini,P.;Leonov,V.;van Hoof,C.Characterization and optimization of polycrystalline Si70%Ge30% for surface micromachined thermopiles in human body applications.J.Micromech.Microeng.2009,doi:10.1088/0960−1317/19/9/094011.
■Su,J.;Leonov,V.;Goedbloed,M.;van Andel,Y.;de Nooijer,M.C.;Elfrink,R;Wang,Z.;Vullers,R.J.A batch process micromachined thermoelectric energy harvester:Fabrication and characterization.J.Micromech.Microeng.2010,doi:10.1088/0960−1317/20/10/104005.
■Yang,S.M.;Lee,T.;Jeng,C.A.Development of a thermoelectric energy harvester with thermal isolation cavity by standard CMOS process.Sens.Actuators A 2009,153,244−250.
■Kao,P.−H;Shih,P.−J.;Dai,C.−L.;Liu,M.−C.Fabrication and characterization of CMOS−MEMS thermoelectric micro generators.Sensors 2010,10,1315−1325.
■Wang,Z.;van Andel,Y.;Jambunathan,M.;Leonov,V.;Elfrink,R.;Vullers,J.M.Characterization of a bulk−micromachined membraneless in−plane thermopile.J.Electron.Mater.2011,40,499−503.13.
■Patent US 7,875,791B1 ”Method for manufacturing a thermopile on a membrane and a membrane−less thermopile,the thermopile thus obtained and a thermoelectric generator comprising such thermopiles”Vladimir Leonov,Paolo Fiorini,Chris Van Hoof(2011)
■Miniaturized thermopile on a membrane are also described by A.Jacquot,W.L Liu,G.Chen,,J.P Flrial,A. Dauscher,B.Lenoir,in ”Fabrication and Modeling of an in−plane thermoelectric micro−generator”,Proceedings ICT02.21st International Conference on Thermoelectrics,p.561−564(2002).
Claims (6)
- 面外熱流束構成の集積熱電発電機デバイスであって、
a)誘電体ベース層(2、2´)を有する、同じ処理がされたシリコンウェハ、または異なる処理がされたシリコンウェハの第1および第2のシリコンダイス(1、1´)と、
b)両方の第1および第2のシリコンダイス(1、1´)の前記誘電体ベース層(2、2´)の上の低い熱伝導率の材料の隔置された丘部(3、3´)の同一の幾何形状を有するラインアレイと、
c)交互にpドープおよびnドープされた、堆積および画定された多結晶半導体の薄膜のセグメント(4、4´、5、5´)の平行線であって、前記隔置された丘部の傾斜側面の上、ならびに前記丘部の平面上部および隣接する丘部の傾斜側面の間の平面谷部の上の一部を延在する、平行線と、
d)前記多結晶半導体の薄膜ラインのセグメント(4、4´、5、5´)の並置された端部を電気的に結合する、丘上部接合金属コンタクト(7、7´)および谷底部接合金属コンタクト(6、6´)と、を備え、
前記低い熱伝導率の材料の熱伝導率は、ドープ多結晶半導体よりも低く、
前記丘上部接合金属コンタクト(7、7´)の第1の丘上部接合金属コンタクト(7)は前記丘上部接合金属コンタクト(7、7´)の第2の丘上部接合金属コンタクト(7´)と対向し、前記第1および第2のシリコンダイス(1、1´)が、前記丘上部接合金属コンタクト(7、7´)のフリップチップ整合ボンディングに従って、対面構成で一緒に結合され、
前記谷底部接合金属コンタクト(6、6´)の一方が、高温接合を構成し、前記谷底部接合金属コンタクト(6、6´)の他方が、熱電発電機を機能させる低温接合を構成する、面外熱流束構成の集積熱電発電機デバイス。 - 前記隔置された丘部(3、3´)の間のボイド空間(V)が、永久的に封止される、請求項1に記載の熱電発電機デバイス。
- 前記シリコンウェハ内にエッチングされ、前記誘電体ベース層(2、2´)上に形成される前記隔置された丘部(3、3´)のベースエリアの幾何学的な突起物に対応して、シリコンよりも低い熱伝導率の材料(8、8´)で充填される、規則的に隔置されたトレンチ(9、9´)をさらに備え、
前記トレンチ(9、9´)の幅が、前記丘部(3、3´)のベースエリアの前記幾何学的な突起物の前記幅を超え、隣接するトレンチ間の空間が、前記谷底部接合金属コンタクト(6、6´)の前記幾何学的な突起物の幅と等しいか、またはわずかに大きい、請求項1に記載の熱電発電機デバイス。 - 前記低い熱伝導率の材料が、シリコン窒化物である、請求項3に記載の熱電発電機デバイス。
- 前記丘部(3、3´)が、熱的に成長させたシリコン酸化物、堆積させたシリコン酸化物、シリコン窒化物、フォノンシリコンのナノスケール薄膜の格子状のものの群に属する材料のものである、請求項4に記載の熱電発電機デバイス。
- 前記第1および第2のシリコンダイス(1、1´)の第1のシリコンダイス(1)および第2のシリコンダイス(1´)が、交互にpドープおよびnドープで画定された多結晶半導体のセグメント(4、5、4´、5´)のシーケンスをオフセットし、それによって、ボンディングの際に、いずれのpドープセグメントも、nドープセグメントに向かって面し、その逆もまた同じである、請求項1〜5のいずれか一項に記載の熱電発電機デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI20141712 | 2014-10-01 | ||
ITMI2014A001712 | 2014-10-01 | ||
PCT/IB2015/057325 WO2016051313A1 (en) | 2014-10-01 | 2015-09-23 | Silicon integrated bivalve thermoelectric generator of out-of-plane heat flux configuration |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017537460A JP2017537460A (ja) | 2017-12-14 |
JP6862339B2 true JP6862339B2 (ja) | 2021-04-21 |
Family
ID=52000938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017517685A Active JP6862339B2 (ja) | 2014-10-01 | 2015-09-23 | 面外熱流束構成のシリコン集積バイバルブ熱電発電機 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10003002B2 (ja) |
EP (1) | EP3201955B1 (ja) |
JP (1) | JP6862339B2 (ja) |
CN (1) | CN106716658B (ja) |
WO (1) | WO2016051313A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108287027A (zh) * | 2017-12-29 | 2018-07-17 | 华中科技大学 | 一种薄膜型超高温热流传感器敏感元及其制备方法 |
KR102474817B1 (ko) * | 2018-12-04 | 2022-12-06 | 현대자동차주식회사 | 열전 모듈 및 그를 포함하는 온도조절장치 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04101472A (ja) * | 1990-08-20 | 1992-04-02 | Matsushita Electric Ind Co Ltd | 冷却装置 |
JPH10303469A (ja) * | 1997-04-23 | 1998-11-13 | Sharp Corp | 薄膜熱電変換素子及びそれを用いた半導体デバイス及びそれを用いたプリント基板 |
EP1083610A4 (en) | 1999-03-10 | 2007-02-21 | Neomax Co Ltd | THERMOELECTRIC CONVERSION MATERIAL AND PROCESS FOR PRODUCING THE SAME |
JP4669395B2 (ja) * | 2003-06-30 | 2011-04-13 | 株式会社ダ・ビンチ | ペルチェ素子及びその製造方法 |
JP4401754B2 (ja) * | 2003-11-28 | 2010-01-20 | 清仁 石田 | 熱電変換モジュールの製造方法 |
JP2005259944A (ja) * | 2004-03-11 | 2005-09-22 | Nagoya Industrial Science Research Inst | 薄膜熱電半導体装置およびその製造方法 |
JP4422548B2 (ja) * | 2004-05-17 | 2010-02-24 | 学校法人立命館 | 熱電変換デバイス |
US7299639B2 (en) | 2004-06-22 | 2007-11-27 | Intel Corporation | Thermoelectric module |
KR100668610B1 (ko) * | 2004-09-09 | 2007-01-16 | 엘지전자 주식회사 | 박막 열전 모듈 |
US7531739B1 (en) * | 2004-10-15 | 2009-05-12 | Marlow Industries, Inc. | Build-in-place method of manufacturing thermoelectric modules |
US7544883B2 (en) * | 2004-11-12 | 2009-06-09 | International Business Machines Corporation | Integrated thermoelectric cooling devices and methods for fabricating same |
JP2006196577A (ja) * | 2005-01-12 | 2006-07-27 | Hitachi Ltd | 配向性熱電薄膜の製造方法及び配向性熱電薄膜を有する半導体デバイス |
EP1976034A3 (en) | 2007-03-29 | 2011-11-09 | Stichting IMEC Nederland | Method for manufacturing a thermopile, the thermopile thus obtrained and a thermoelectric generator comprising such thermopiles |
DE102008009428A1 (de) * | 2008-02-15 | 2009-08-27 | Isabellenhütte Heusler Gmbh & Co. Kg | Thermo-elektrischer Wandler und zugehöriges Herstellungsverfahren |
ITRM20080193A1 (it) | 2008-04-11 | 2009-10-12 | Univ Milano Bicocca | Dispositivo di conversione termo-elettrica bidirezionale ad effetto seebeck/peltier impiegante nanofili di materiale conduttore o semiconduttore. |
IT1397598B1 (it) | 2009-07-15 | 2013-01-16 | Univ Milano Bicocca | Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica |
IT1397679B1 (it) | 2009-12-15 | 2013-01-18 | Univ Milano Bicocca | Elemento di conversione termo-elettrica seebeck/peltier comprendente nanofili paralleli di materiale conduttore o semiconduttore organizzati in file e colonne attraverso un corpo isolante e procedimento |
US9444027B2 (en) * | 2011-10-04 | 2016-09-13 | Infineon Technologies Ag | Thermoelectrical device and method for manufacturing same |
US20130307200A1 (en) * | 2011-11-02 | 2013-11-21 | John Carberry | Sintered Polycrystalline Silicon-based Thermoelectrics |
US9123780B2 (en) | 2012-12-19 | 2015-09-01 | Invensas Corporation | Method and structures for heat dissipating interposers |
US9620698B2 (en) * | 2013-01-08 | 2017-04-11 | Analog Devices, Inc. | Wafer scale thermoelectric energy harvester |
-
2015
- 2015-09-23 EP EP15781434.4A patent/EP3201955B1/en not_active Not-in-force
- 2015-09-23 WO PCT/IB2015/057325 patent/WO2016051313A1/en active Application Filing
- 2015-09-23 CN CN201580052881.4A patent/CN106716658B/zh not_active Expired - Fee Related
- 2015-09-23 JP JP2017517685A patent/JP6862339B2/ja active Active
-
2017
- 2017-03-21 US US15/464,987 patent/US10003002B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106716658A (zh) | 2017-05-24 |
US10003002B2 (en) | 2018-06-19 |
EP3201955A1 (en) | 2017-08-09 |
WO2016051313A1 (en) | 2016-04-07 |
CN106716658B (zh) | 2019-03-08 |
EP3201955B1 (en) | 2018-07-25 |
JP2017537460A (ja) | 2017-12-14 |
US20170194550A1 (en) | 2017-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10050190B2 (en) | Silicon integrated, out-of-plane heat flux thermoelectric generator | |
US9997691B2 (en) | 3D integrated thermoelectric generator operating in an out-of-plane heat flux configuration with internal voids and heat conduction paths conditioning vias | |
WO2013127114A1 (zh) | 微型热电能量收集器及其制作方法 | |
WO2013127113A1 (zh) | 三维热电能量收集器及其制作方法 | |
US11641779B2 (en) | Thermoelectric devices and methods for forming thermoelectric devices | |
JP6862339B2 (ja) | 面外熱流束構成のシリコン集積バイバルブ熱電発電機 | |
JP7015304B2 (ja) | 集積熱電発電機および関連する製造方法 | |
US10388845B2 (en) | Thermoelectric generator | |
Iulianella et al. | Integrated Thermoelectric Generator and related Method of Fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170905 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180802 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190719 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190816 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200707 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201007 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210302 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210331 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6862339 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |