IT1397598B1 - Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica - Google Patents

Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica

Info

Publication number
IT1397598B1
IT1397598B1 ITVA2009A000050A ITVA20090050A IT1397598B1 IT 1397598 B1 IT1397598 B1 IT 1397598B1 IT VA2009A000050 A ITVA2009A000050 A IT VA2009A000050A IT VA20090050 A ITVA20090050 A IT VA20090050A IT 1397598 B1 IT1397598 B1 IT 1397598B1
Authority
IT
Italy
Prior art keywords
peltier
thermo
structures
conversion device
electric conversion
Prior art date
Application number
ITVA2009A000050A
Other languages
English (en)
Inventor
Dario Narducci
Gianfranco Cerofolini
Original Assignee
Univ Milano Bicocca
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Milano Bicocca filed Critical Univ Milano Bicocca
Priority to ITVA2009A000050A priority Critical patent/IT1397598B1/it
Priority to CN201080031509.2A priority patent/CN102549787B/zh
Priority to US13/384,079 priority patent/US9178127B2/en
Priority to PCT/IB2010/001729 priority patent/WO2011007241A1/en
Priority to JP2012520117A priority patent/JP5677713B2/ja
Priority to EP10742254.5A priority patent/EP2454766B1/en
Publication of ITVA20090050A1 publication Critical patent/ITVA20090050A1/it
Application granted granted Critical
Publication of IT1397598B1 publication Critical patent/IT1397598B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Motor Or Generator Cooling System (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
ITVA2009A000050A 2009-07-15 2009-07-15 Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica IT1397598B1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITVA2009A000050A IT1397598B1 (it) 2009-07-15 2009-07-15 Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica
CN201080031509.2A CN102549787B (zh) 2009-07-15 2010-07-14 采用半导电材料的处理膜而无需纳米精度的塞贝克/珀耳帖热电转换器件
US13/384,079 US9178127B2 (en) 2009-07-15 2010-07-14 Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition
PCT/IB2010/001729 WO2011007241A1 (en) 2009-07-15 2010-07-14 Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition
JP2012520117A JP5677713B2 (ja) 2009-07-15 2010-07-14 ナノ構造を必要とせず半導体材料製の処理済層を利用したセーベック／ペルティ効果を利用した熱−電気変換装置
EP10742254.5A EP2454766B1 (en) 2009-07-15 2010-07-14 Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2009A000050A IT1397598B1 (it) 2009-07-15 2009-07-15 Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica

Publications (2)

Publication Number Publication Date
ITVA20090050A1 ITVA20090050A1 (it) 2011-01-16
IT1397598B1 true IT1397598B1 (it) 2013-01-16

Family

ID=42027982

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA2009A000050A IT1397598B1 (it) 2009-07-15 2009-07-15 Dispositivo di conversione termo-elettrica ad effetto seebeck/peltier impiegante strutture di materiale semiconduttore trattato non richiedente definizione su scala nanometrica

Country Status (6)

Country Link
US (1) US9178127B2 (it)
EP (1) EP2454766B1 (it)
JP (1) JP5677713B2 (it)
CN (1) CN102549787B (it)
IT (1) IT1397598B1 (it)
WO (1) WO2011007241A1 (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20110751A1 (it) * 2011-05-04 2012-11-05 Consorzio Delta Ti Res Dispositivo di conversione termoelettrica seebeck/peltier impiegante strati nanometrici impilati alternati di materiale conduttore e dielettrico e procedimento di fabbricazione
US20140116491A1 (en) * 2012-10-29 2014-05-01 Alphabet Energy, Inc. Bulk-size nanostructured materials and methods for making the same by sintering nanowires
US9040339B2 (en) 2013-10-01 2015-05-26 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material
US9276190B2 (en) 2013-10-01 2016-03-01 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
JP6348000B2 (ja) * 2014-06-26 2018-06-27 公立大学法人大阪府立大学 熱電変換素子
JP6278400B2 (ja) * 2014-08-15 2018-02-14 国立研究開発法人産業技術総合研究所 熱電特性の向上した有機熱電材料及びその製造方法
WO2016046713A1 (en) 2014-09-22 2016-03-31 Consorzio Delta Ti Research Silicon integrated, out-of-plane heat flux thermoelectric generator
JP6862339B2 (ja) 2014-10-01 2021-04-21 コンソルツィオ デルタ ティ リサーチ 面外熱流束構成のシリコン集積バイバルブ熱電発電機
JP6859257B2 (ja) 2014-10-09 2021-04-14 コンソルツィオ デルタ ティ リサーチ 内部ボイド及び熱伝導経路調整ビアを備える面外熱流束構成で動作する３ｄ集積化熱電発電機
CN104900557B (zh) * 2015-05-07 2018-11-06 中国科学院微电子研究所 赛贝克系数测量结构、测量结构制备方法及测量方法
US10889501B2 (en) * 2016-02-24 2021-01-12 Massachusetts Institute Of Technology Solar thermal aerogel receiver and materials therefor
JP6147901B1 (ja) * 2016-07-29 2017-06-14 株式会社Ｇｃｅインスティチュート 熱電素子及び熱電素子の製造方法
IT201600109345A1 (it) 2016-10-28 2018-04-28 Consorzio Delta Ti Res Generatore termoelettrico integrato e relativo metodo di fabbricazione

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09186368A (ja) * 1995-10-31 1997-07-15 Technova:Kk 厚膜熱電素子
CN100385694C (zh) * 1999-03-10 2008-04-30 日立金属株式会社 热电转换材料及其制作方法
JP2000261043A (ja) * 1999-03-10 2000-09-22 Sumitomo Special Metals Co Ltd 熱電変換材料とその製造方法
FR2822295B1 (fr) 2001-03-16 2004-06-25 Edouard Serras Generateur thermoelectrique a semi-conducteurs et ses procedes de fabrication
JP2004134454A (ja) 2002-10-08 2004-04-30 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその製造方法
JP2004349566A (ja) 2003-05-23 2004-12-09 Kyocera Corp 一方向凝固熱電結晶材料とその製造方法、これを用いた熱電素子とその製造方法、及び熱電モジュール
JP2005136032A (ja) * 2003-10-29 2005-05-26 Toyota Motor Corp 熱電変換素子
WO2006033875A2 (en) * 2004-09-09 2006-03-30 Orobridge, Inc. Thermoelectric devices with controlled current flow and related methods
US20090314324A1 (en) * 2005-12-07 2009-12-24 Junya Murai Thermoelectric conversion material and method of producing the same
JP4953841B2 (ja) * 2006-03-31 2012-06-13 京セラ株式会社 熱電モジュール
US7807917B2 (en) * 2006-07-26 2010-10-05 Translucent, Inc. Thermoelectric and pyroelectric energy conversion devices
US20080212625A1 (en) * 2007-01-15 2008-09-04 Kabusiki Kaisha Y.Y.L. Semiconductor device
ITRM20080193A1 (it) 2008-04-11 2009-10-12 Univ Milano Bicocca Dispositivo di conversione termo-elettrica bidirezionale ad effetto seebeck/peltier impiegante nanofili di materiale conduttore o semiconduttore.

Also Published As

Publication number Publication date
WO2011007241A1 (en) 2011-01-20
ITVA20090050A1 (it) 2011-01-16
CN102549787B (zh) 2015-04-22
US20120174954A1 (en) 2012-07-12
EP2454766A1 (en) 2012-05-23
CN102549787A (zh) 2012-07-04
JP5677713B2 (ja) 2015-02-25
JP2012533185A (ja) 2012-12-20
US9178127B2 (en) 2015-11-03
EP2454766B1 (en) 2014-07-09

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