JP6851175B2 - ジベンゾカルバゾール化合物、発光素子、発光装置、表示装置、電子機器、及び照明装置 - Google Patents

ジベンゾカルバゾール化合物、発光素子、発光装置、表示装置、電子機器、及び照明装置 Download PDF

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JP6851175B2
JP6851175B2 JP2016210579A JP2016210579A JP6851175B2 JP 6851175 B2 JP6851175 B2 JP 6851175B2 JP 2016210579 A JP2016210579 A JP 2016210579A JP 2016210579 A JP2016210579 A JP 2016210579A JP 6851175 B2 JP6851175 B2 JP 6851175B2
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carbon atoms
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JP2017081913A (ja
JP2017081913A5 (enExample
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宏記 鈴木
宏記 鈴木
瀬尾　哲史
哲史 瀬尾
恒徳 鈴木
恒徳 鈴木
直明 橋本
直明 橋本
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Semiconductor Energy Laboratory Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
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    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
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    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Indole Compounds (AREA)
JP2016210579A 2015-10-30 2016-10-27 ジベンゾカルバゾール化合物、発光素子、発光装置、表示装置、電子機器、及び照明装置 Active JP6851175B2 (ja)

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JP7144422B2 (ja) * 2017-08-10 2022-09-29 株式会社半導体エネルギー研究所 有機化合物、発光素子、表示装置、電子機器及び照明装置
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KR20250160226A (ko) 2019-03-07 2025-11-11 오티아이 루미오닉스 인크. 핵생성 억제 코팅물 형성용 재료 및 이를 포함하는 디바이스
KR102831863B1 (ko) 2019-04-18 2025-07-10 오티아이 루미오닉스 인크. 핵 생성 억제 코팅 형성용 물질 및 이를 포함하는 디바이스
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TW202147665A (zh) * 2020-04-28 2021-12-16 日商半導體能源研究所股份有限公司 發光器件、金屬錯合物、發光裝置、電子裝置及照明設備
JP2022066170A (ja) 2020-10-16 2022-04-28 株式会社半導体エネルギー研究所 有機化合物、発光デバイス、発光装置、電子機器、表示装置、照明装置
JP2023553379A (ja) 2020-12-07 2023-12-21 オーティーアイ ルミオニクス インコーポレーテッド 核形成抑制被膜及び下地金属被膜を用いた導電性堆積層のパターニング
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JP2017081913A (ja) 2017-05-18
US10207992B2 (en) 2019-02-19
JP2021119132A (ja) 2021-08-12
US20170125703A1 (en) 2017-05-04

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