JP6849682B2 - Ｅ２級増幅器 - Google Patents

Ｅ２級増幅器 Download PDF

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Publication number
JP6849682B2
JP6849682B2 JP2018530551A JP2018530551A JP6849682B2 JP 6849682 B2 JP6849682 B2 JP 6849682B2 JP 2018530551 A JP2018530551 A JP 2018530551A JP 2018530551 A JP2018530551 A JP 2018530551A JP 6849682 B2 JP6849682 B2 JP 6849682B2
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circuit
amplifier
fundamental frequency
load
harmonic
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JP2019505112A5 (https=
JP2019505112A (ja
Inventor
ガブリエル・アイザック・メイヨー
チャールズ・エドワード・ウィートレイ
フォン・フィン
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/171—A filter circuit coupled to the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/351—Pulse width modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
JP2018530551A 2015-12-14 2016-11-16 Ｅ２級増幅器 Active JP6849682B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562266747P 2015-12-14 2015-12-14
US62/266,747 2015-12-14
US15/152,660 2016-05-12
US15/152,660 US9929704B2 (en) 2015-12-14 2016-05-12 Class E2 amplifier
PCT/US2016/062131 WO2017105732A1 (en) 2015-12-14 2016-11-16 Class e2 amplifier

Publications (3)

Publication Number Publication Date
JP2019505112A JP2019505112A (ja) 2019-02-21
JP2019505112A5 JP2019505112A5 (https=) 2019-12-05
JP6849682B2 true JP6849682B2 (ja) 2021-03-24

Family

ID=59020286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018530551A Active JP6849682B2 (ja) 2015-12-14 2016-11-16 Ｅ２級増幅器

Country Status (9)

Country Link
US (1) US9929704B2 (https=)
EP (1) EP3391539B1 (https=)
JP (1) JP6849682B2 (https=)
KR (1) KR102632024B1 (https=)
CN (1) CN108370240B (https=)
BR (1) BR112018011855A2 (https=)
CA (1) CA3003882A1 (https=)
TW (1) TWI685191B (https=)
WO (1) WO2017105732A1 (https=)

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US9929704B2 (en) * 2015-12-14 2018-03-27 Qualcomm Incorporated Class E2 amplifier
JP7165355B2 (ja) 2019-02-19 2022-11-04 株式会社デンソー 電力増幅回路
WO2021178811A1 (en) * 2020-03-06 2021-09-10 Yank Technologies, Inc. Automotive center console wireless charging system
CN112260522B (zh) * 2020-09-03 2022-04-05 西安理工大学 用于mosfet的e2类谐振驱动电路及其调制方法
US11469724B2 (en) * 2020-11-09 2022-10-11 Aira, Inc. Free-boost class-e amplifier
WO2022265728A2 (en) * 2021-04-25 2022-12-22 University Of Southern California Millimeter-wave class ef power amplifier with concurrent harmonic and subharmonic tuning
US12166458B2 (en) * 2021-10-08 2024-12-10 Rachit Joshi Radio frequency power amplifier and method for manufacturing Doherty power amplifier
US12155235B2 (en) 2021-11-29 2024-11-26 Samsung Electronics Co., Ltd. Electronic device including matching circuit for reducing harmonics
US12104967B2 (en) * 2022-02-25 2024-10-01 Wisconsin Alumni Research Foundation Electromechanical force sensor based on extrema degeneracy point with nonlinear response
CN121522746A (zh) * 2026-01-15 2026-02-13 吉林大学 一种自适应多频谐振匹配系统及设计方法

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Also Published As

Publication number Publication date
WO2017105732A1 (en) 2017-06-22
BR112018011855A2 (pt) 2018-11-27
KR102632024B1 (ko) 2024-01-31
EP3391539B1 (en) 2022-07-13
TW201729534A (zh) 2017-08-16
TWI685191B (zh) 2020-02-11
US9929704B2 (en) 2018-03-27
JP2019505112A (ja) 2019-02-21
EP3391539A1 (en) 2018-10-24
CN108370240A (zh) 2018-08-03
CN108370240B (zh) 2021-11-12
KR20180092980A (ko) 2018-08-20
US20170170794A1 (en) 2017-06-15
CA3003882A1 (en) 2017-06-22

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