JP6846704B2 - 光スイッチ - Google Patents
光スイッチ Download PDFInfo
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- JP6846704B2 JP6846704B2 JP2017053507A JP2017053507A JP6846704B2 JP 6846704 B2 JP6846704 B2 JP 6846704B2 JP 2017053507 A JP2017053507 A JP 2017053507A JP 2017053507 A JP2017053507 A JP 2017053507A JP 6846704 B2 JP6846704 B2 JP 6846704B2
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- Prior art keywords
- phase change
- clad
- change material
- optical switch
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- 230000003287 optical effect Effects 0.000 title claims description 90
- 239000012782 phase change material Substances 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 9
- 150000004770 chalcogenides Chemical class 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 description 23
- 230000007704 transition Effects 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 10
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001902 propagating effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910012465 LiTi Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
101 下部クラッド
102,152,202,302,402 コア
103,153,203,303,403 相変化材料
104 中間クラッド
105,155,205 上部ヒータ膜
106,156,206,306 下部ヒータ膜
406 ヒータ膜
107 上部クラッド
108〜111,158〜161,208〜211,310,311,410,411 電極
112 アーム導波路
113 スイッチ動作部
114 入力導波路
115,117 方向性結合器
116 出力導波路
Claims (8)
- 基板上に形成された下部クラッドの内部にコアが形成された光導波路と、
前記下部クラッド上に形成された中間クラッドであって、
前記コアの上部に埋め込まれた相変化材料、および
該相変化材料の下面に接し、対向する面が前記下部クラッドと接するヒータ膜を含む中間クラッドと、
該中間クラッド上に形成された上部クラッドと
を備えたことを特徴とする光スイッチ。 - 前記上部クラッドは、前記相変化材料の上面と前記中間クラッドとに接するヒータ膜をさらに含むことを特徴とする請求項1に記載の光スイッチ。
- 前記相変化材料は、テトラヘドラル系材料、Ge−Sb−Te系カルコゲナイド系材料、またはSb−Te系カルコゲナイド系材料からなることを特徴とする請求項1または2に記載の光スイッチ。
- 基板上に形成された下部クラッドの内部にコアが形成された光導波路と、
前記下部クラッド上に形成され、前記コアの上部に埋め込まれた下部相変化材料を含む中間クラッドと、
該中間クラッド上に形成された上部クラッドであって、
前記下部相変化材料の上面と前記中間クラッドとに接するヒータ膜、および
該ヒータ膜上に接して、前記下部相変化材料と対向する位置に埋め込まれた上部相変化材料を含む上部クラッドと
を備えたことを特徴とする光スイッチ。 - 前記下部相変化材料および前記上部相変化材料は、テトラヘドラル系材料、Ge−Sb−Te系カルコゲナイド系材料、またはSb−Te系カルコゲナイド系材料からなることを特徴とする請求項4に記載の光スイッチ。
- 前記ヒータ膜は、インジウム、アルミニウム、スズ、亜鉛、ゲルマニウム、ガリウムの酸化物、ランタノイドを含む酸化物、遷移金属酸化物またはそれらの複合酸化物、カーボンナノチューブ、またはグラフェンからなることを特徴とする請求項1、2または4に記載の光スイッチ。
- 前記コアは、シリコン、窒化シリコン、シリコンゲルマニウム、リン化インジウム、ヒ素化ガリウム、窒化ガリウム、リン化ヒ素化インジウムガリウム、ヒ素化インジウムアルミニウム、ヒ素化インジウムガリウム、またはヒ素化窒化ガリウムからなることを特徴とする請求項1、2または4に記載の光スイッチ。
- 前記ヒータ膜に接続され、オーミック接触を形成する金、銀、プラチナ、銅、または高ドープされた半導体材料からなる電極をさらに備えたことを特徴とする請求項1、2または4に記載の光スイッチ。
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JP2017053507A JP6846704B2 (ja) | 2017-03-17 | 2017-03-17 | 光スイッチ |
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JP2017053507A JP6846704B2 (ja) | 2017-03-17 | 2017-03-17 | 光スイッチ |
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JP2018155963A JP2018155963A (ja) | 2018-10-04 |
JP6846704B2 true JP6846704B2 (ja) | 2021-03-24 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10509244B1 (en) * | 2018-12-11 | 2019-12-17 | Globalfoundries Inc. | Optical switches and routers operated by phase-changing materials controlled by heaters |
JP2020134599A (ja) * | 2019-02-14 | 2020-08-31 | 古河電気工業株式会社 | 光半導体素子および集積型半導体レーザ |
CN109870833A (zh) * | 2019-02-28 | 2019-06-11 | 上海交通大学 | 基于硅-相变材料混合集成硅波导的多级非易失性光衰减器 |
CN111129185B (zh) * | 2019-12-26 | 2021-09-07 | 西安交通大学 | 一种基于石墨烯界面层的异面结构GaAs光导开关及其制备工艺 |
JP7338657B2 (ja) * | 2021-03-11 | 2023-09-05 | 株式会社豊田中央研究所 | 位相シフタ |
CN114371532A (zh) * | 2021-08-16 | 2022-04-19 | 北京工业大学 | 一种基于相变材料的分支波导交互调控超快全光开关 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006184345A (ja) * | 2004-12-27 | 2006-07-13 | Keio Gijuku | 光スイッチ、光シリアル−パラレル変換器、並列ビット遅延可変・波長変換回路及び光時間スイッチ |
JP2011033963A (ja) * | 2009-08-05 | 2011-02-17 | Keio Gijuku | 導波路型光ゲートスイッチ及び多段導波路型光ゲートスイッチ |
WO2011043774A1 (en) * | 2009-10-08 | 2011-04-14 | Hewlett-Packard Development Company, L.P. | Tunable resonators |
EP3087430B1 (en) * | 2013-12-23 | 2018-05-02 | Oxford University Innovation Limited | Display device based on phase-change materials |
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