JP6842622B2 - Flow sensor and its manufacturing method - Google Patents
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- JP6842622B2 JP6842622B2 JP2016170665A JP2016170665A JP6842622B2 JP 6842622 B2 JP6842622 B2 JP 6842622B2 JP 2016170665 A JP2016170665 A JP 2016170665A JP 2016170665 A JP2016170665 A JP 2016170665A JP 6842622 B2 JP6842622 B2 JP 6842622B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 59
- 238000010438 heat treatment Methods 0.000 claims description 33
- 239000002344 surface layer Substances 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
本発明は、フローセンサ及びその製造方法に関するものである。 The present invention relates to a flow sensor and a method for manufacturing the same.
流体として例えば気体を検知するガスセンサは、気体の流量で特性が変動するため、流量を監視する必要がある。流量の監視には、例えばフローセンサが使われている。フローセンサで検出する気体は、酸性ガス、アルカリ性ガス、燃焼性ガス等の様々な種類があるため、ガスセンサには高耐腐食性が要求される。また、ハンディタイプのフローセンサでは、長時間の電池駆動を可能にするために低消費電力性が求められている。 A gas sensor that detects, for example, a gas as a fluid has characteristics that vary depending on the flow rate of the gas, so it is necessary to monitor the flow rate. For example, a flow sensor is used to monitor the flow rate. Since there are various types of gases detected by the flow sensor, such as acid gas, alkaline gas, and combustible gas, the gas sensor is required to have high corrosion resistance. Further, the handy type flow sensor is required to have low power consumption in order to enable long-term battery operation.
このようなフローセンサとしては、加熱体と、加熱体によって生ずる流体の温度差を測定する測温体とを備えることにより、流体の流量及び流れの方向を測定するものが開示されている（例えば、特許文献１）。 As such a flow sensor, one that measures the flow rate and the direction of flow of a fluid by including a heating body and a temperature measuring body that measures the temperature difference of the fluid generated by the heating body is disclosed (for example,). , Patent Document 1).
また加熱体としてのマイクロヒータは、複数の凹凸を有する支持膜と、支持膜の一方の表面に設けられた加熱体と支持膜の周囲を支持し、かつ加熱体と対向する部分が取り除かれた基板とを含むものが開示されている（例えば、特許文献２）。 Further, the microheater as a heating body supports the support film having a plurality of irregularities, the heating body provided on one surface of the support film, and the periphery of the support film, and the portion facing the heating body is removed. Those including a substrate are disclosed (for example, Patent Document 2).
しかしながら上記特許文献の場合、マイクロヒータの熱を流体に効率的に伝えることが困難であるという問題があった。すなわち上記特許文献１の場合、加熱体は気体に近い位置にあるとはいえないため、加熱体に接触する流体が限られてしまう。 However, in the case of the above patent document, there is a problem that it is difficult to efficiently transfer the heat of the microheater to the fluid. That is, in the case of Patent Document 1, since the heated body cannot be said to be in a position close to the gas, the fluid in contact with the heated body is limited.
また上記特許文献２の場合、支持膜上に加熱体が設けられているので、流体は加熱体の上方のみを通過し、加熱体の下方を通過することができない。さらにマイクロヒータによって生じた熱が支持膜に逃げてしまう、という問題があった。 Further, in the case of Patent Document 2, since the heating body is provided on the support film, the fluid passes only above the heating body and cannot pass below the heating body. Further, there is a problem that the heat generated by the microheater escapes to the support film.
そこで本発明は、より効率的に流体を加熱することができるフローセンサ及びその製造方法を提供することを目的とする。 Therefore, an object of the present invention is to provide a flow sensor capable of heating a fluid more efficiently and a method for manufacturing the same.
本発明に係るフローセンサは、発熱体と、前記発熱体の両側にそれぞれ配置された測温体とが表面に形成された基板を備えるフローセンサにおいて、前記発熱体及び前記測温体は、配線部と、前記配線部の端部に形成された接続部とを有する抵抗体を含み、前記抵抗体は前記接続部において前記基板に固定されており、前記配線部は、中央部分が前記基板の表面から凸となる山形状であることを特徴とする。 The flow sensor according to the present invention is a flow sensor including a substrate on which a heating element and a resistance temperature detector arranged on both sides of the heating element are formed on the surface, and the heating element and the resistance temperature detector are wired. A resistor having a portion and a connecting portion formed at an end portion of the wiring portion is included, the resistor is fixed to the substrate at the connecting portion, and the central portion of the wiring portion is the substrate. It is characterized by having a mountain shape that is convex from the surface.
本発明に係るフローセンサの製造方法は、スパッタ法を用いて金属膜を表面層上に蒸着する工程と、前記金属膜の周囲の前記表面層を選択的に除去し、膜応力により中央部分が前記基板の表面から凸となる山形状である前記抵抗体を形成する工程とを備えることを特徴とする。 The method for manufacturing a flow sensor according to the present invention includes a step of depositing a metal film on a surface layer by using a sputtering method, and selectively removing the surface layer around the metal film, and the central portion is formed by film stress. It is characterized by comprising a step of forming the resistor having a mountain shape that is convex from the surface of the substrate.
本発明によれば、配線部の中央部分が前記基板の表面から凸となる山形状であることにより、配線部が気体により近づくことができるので、フローセンサは、効率的に流路中の気体を加熱することができる。 According to the present invention, since the central portion of the wiring portion has a mountain shape that is convex from the surface of the substrate, the wiring portion can be closer to the gas, so that the flow sensor can efficiently use the gas in the flow path. Can be heated.
１．実施形態
（全体構成）
本発明の実施形態に係るフローセンサについて、図面を参照して説明する。図１に示すように、フローセンサ１０は、発熱体１４と、前記発熱体１４の両側にそれぞれ配置された測温体としての第１測温体１６及び第２測温体１８とが表面に形成された基板１２を備える。フローセンサ１０は、流体である気体が流れる流路２８（図２）において、下流側に第１測温体１６、上流側に第２測温体１８を配置するように設けられる。基板１２は、絶縁体、例えばＳｉ、Ａｌ２Ｏ３、樹脂などで形成することができる。本実施形態の場合、基板１２は、平面視矩形状のＳｉＯ２基板と、当該ＳｉＯ２基板上に設けられた表面層１３とで構成されている。表面層１３は、耐腐食性を有する材料、例えばポリイミド等の熱硬化性樹脂や、セラミックスで形成するのが好ましい。
1. 1. Embodiment (overall configuration)
The flow sensor according to the embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, the flow sensor 10 has a heating element 14 and a first temperature measuring element 16 and a second temperature measuring element 18 as temperature measuring elements arranged on both sides of the heating element 14 on the surface thereof. The formed substrate 12 is provided. The flow sensor 10 is provided so as to arrange the first resistance temperature detector 16 on the downstream side and the second resistance temperature detector 18 on the upstream side in the flow path 28 (FIG. 2) through which the gas as a fluid flows. The substrate 12 can be formed of an insulator such as Si, Al 2 O 3 , resin, or the like. In the case of the present embodiment, the substrate 12 is composed of a SiO 2 substrate having a rectangular shape in a plan view and a surface layer 13 provided on the SiO 2 substrate. The surface layer 13 is preferably formed of a material having corrosion resistance, for example, a thermosetting resin such as polyimide, or ceramics.
発熱体１４と、第１測温体１６及び第２測温体１８は、層状に形成されている。発熱体１４と、第１測温体１６及び第２測温体１８は、構成が同じであるので、説明を省略するため、発熱体１４について以下説明する。本実施形態の場合、発熱体１４は、温度で電気抵抗値が変化する発熱体材料、例えば金や白金などの金属膜で形成され、一対の電極２１と、電極２１間に形成された抵抗体２０とを有する。電極２１は、基板１２の両側に各１個（合計２個）形成されている。 The heating element 14, the first resistance temperature detector 16 and the second resistance temperature detector 18 are formed in layers. Since the heating element 14, the first resistance temperature measuring element 16 and the second resistance temperature measuring element 18 have the same configuration, the heating element 14 will be described below in order to omit the description. In the case of the present embodiment, the heating element 14 is formed of a heating element material whose electric resistance value changes with temperature, for example, a metal film such as gold or platinum, and is formed between the pair of electrodes 21 and the electrodes 21. Has 20 and. One electrode 21 is formed on each side of the substrate 12 (two electrodes in total).
抵抗体２０は、基板１２のほぼ中央に配置されている。抵抗体２０は、配線部２２と、配線部２２の端部に形成された接続部２４とを含む。平面視において、配線部２２は線状、接続部２４は矩形状に形成されている。具体的には、平面視において、配線部２２は、一端から他端まで太さが均一な直線状であり、接続部２４は正方形である。 The resistor 20 is arranged substantially in the center of the substrate 12. The resistor 20 includes a wiring portion 22 and a connecting portion 24 formed at an end portion of the wiring portion 22. In a plan view, the wiring portion 22 is formed in a linear shape, and the connecting portion 24 is formed in a rectangular shape. Specifically, in a plan view, the wiring portion 22 has a linear shape having a uniform thickness from one end to the other end, and the connecting portion 24 has a square shape.
配線部２２は、接続部２４に比べ電気抵抗が大きくなるように、線幅が接続部２４に比べ狭く形成されている。配線部２２は、複数（本図の場合、５個）が互いに平行になるように並列に配置されており、端部において接続部２４を介して隣り合う他の配線部２２と接続され、ジグザグ状に形成されている。接続部２４は、２個の配線部２２が接続されている。配線部２２と接続部２４の間には、配線部２２同士を電気的に接続する短絡部２６が梯子形状に形成されている。抵抗体２０を構成する両端に配置された配線部２２の端部は、接続部２４を介して電極２１に接続されている。接続部２４と電極２１の間にも、配線部２２同士を電気的に接続する短絡部２６が梯子形状に形成されている。 The wiring portion 22 is formed to have a narrower line width than the connection portion 24 so that the electrical resistance is larger than that of the connection portion 24. A plurality of wiring portions 22 (five in the case of this figure) are arranged in parallel so as to be parallel to each other, and are connected to other wiring portions 22 adjacent to each other via a connecting portion 24 at an end portion in a zigzag manner. It is formed in a shape. Two wiring portions 22 are connected to the connection portion 24. A short-circuit portion 26 for electrically connecting the wiring portions 22 to each other is formed in a ladder shape between the wiring portion 22 and the connection portion 24. The ends of the wiring portions 22 arranged at both ends constituting the resistor 20 are connected to the electrodes 21 via the connecting portions 24. A short-circuit portion 26 for electrically connecting the wiring portions 22 to each other is also formed in a ladder shape between the connection portion 24 and the electrode 21.
図２に示すように、配線部２２は、中央部分が前記基板１２表面から凸となる山形状を有する。基板１２は、表面から突出した支持部３０が形成されている。抵抗体２０の接続部２４は、上記支持部３０に固定されている。支持部３０の高さは、特に限定されないが、例えば１０μｍ程度とすることができる。配線部２２は、両端が接続部２４によって支持されているので、両持ち梁構造である。配線部２２の頂上部分の支持部３０からの高さは、特に限定されないが、例えば１０〜５０μｍ程度とすることができる。 As shown in FIG. 2, the wiring portion 22 has a mountain shape in which the central portion is convex from the surface of the substrate 12. The substrate 12 is formed with a support portion 30 projecting from the surface. The connecting portion 24 of the resistor 20 is fixed to the supporting portion 30. The height of the support portion 30 is not particularly limited, but can be, for example, about 10 μm. Since both ends of the wiring portion 22 are supported by the connecting portion 24, the wiring portion 22 has a double-sided beam structure. The height of the top portion of the wiring portion 22 from the support portion 30 is not particularly limited, but can be, for example, about 10 to 50 μm.
（配線部の製造方法）
次に配線部２２の製造方法を、図３を参照して説明する。なお、説明の便宜上、配線部２２を１個製造する場合について説明する。まず、ＳｉＯ２基板３１上に表面層１３Ａを有する基板を用意する（図３Ａ）。次いで図３Ｂに示すようにホトレジスト３２を選択的に形成する。その後、図３Ｃに示すように、スパッタ法により金属膜３４を形成する。次いで、ホトレジスト３２をアセトンなどの有機溶媒を用いて除去する。同時にホトレジスト３２上に形成された金属膜３４もリフトオフにより除去する（図３Ｄ）。最後に、形成された開口部３６の表面層１３を例えばフッ酸によるエッチングにより除去して溝３８を形成する（図３Ｅ）。そうすると膜応力により、中央部分が前記基板１２表面から凸となる山形状を有し両持ち梁構造の配線部２２を得ることができる。
(Manufacturing method of wiring part)
Next, a method of manufacturing the wiring unit 22 will be described with reference to FIG. For convenience of explanation, a case where one wiring portion 22 is manufactured will be described. First, a substrate having a surface layer 13A on the SiO 2 substrate 31 is prepared (FIG. 3A). Then, as shown in FIG. 3B, the photoresist 32 is selectively formed. Then, as shown in FIG. 3C, the metal film 34 is formed by a sputtering method. Then, the photoresist 32 is removed using an organic solvent such as acetone. At the same time, the metal film 34 formed on the photoresist 32 is also removed by lift-off (FIG. 3D). Finally, the surface layer 13 of the formed opening 36 is removed by etching with hydrofluoric acid, for example, to form a groove 38 (FIG. 3E). Then, due to the film stress, a wiring portion 22 having a mountain shape in which the central portion is convex from the surface of the substrate 12 and having a double-sided beam structure can be obtained.
（作用及び効果）
上記のように構成されたフローセンサ１０は、発熱体１４の電極２１間に電力が供給されると、発熱体１４の抵抗体２０が電気抵抗によって加熱される。抵抗体２０は、配線部２２が接続部２４に比べ電気抵抗が大きくなるように形成されており、さらに短絡部２６を介して接続部２４に接続されている。これにより抵抗体２０は、中央部分を中心に温度が高くなる。
(Action and effect)
In the flow sensor 10 configured as described above, when electric power is supplied between the electrodes 21 of the heating element 14, the resistor 20 of the heating element 14 is heated by the electric resistance. The resistor 20 is formed so that the wiring portion 22 has a larger electric resistance than the connecting portion 24, and is further connected to the connecting portion 24 via the short-circuit portion 26. As a result, the temperature of the resistor 20 rises around the central portion.
このように加熱されると、発熱体１４の周囲の気体の温度が高くなる。周囲の気体に流れがない場合、発熱体１４の周囲の温度分布は対称となるので、第１測温体１６及び第２測温体１８の温度は等しくなる。 When heated in this way, the temperature of the gas around the heating element 14 rises. When there is no flow in the surrounding gas, the temperature distribution around the heating element 14 is symmetrical, so that the temperatures of the first resistance thermometer 16 and the second resistance temperature detector 18 are equal.
一方、周囲の気体に流れが生じた場合、発熱体１４の周囲の温度分布は対称とならず、一方が高くなる。例えば、上流側から下流側へ気体が流れている場合、第２測温体１８の温度が低下すると共に、第１測温体１６の温度が上昇する。フローセンサ１０は、第１測温体１６と第２測温体１８の抵抗値の差を図示しないブリッジ回路で検出することにより、流量に応じた電気出力を得ることができる。 On the other hand, when a flow occurs in the surrounding gas, the temperature distribution around the heating element 14 is not symmetrical, and one becomes higher. For example, when gas is flowing from the upstream side to the downstream side, the temperature of the second resistance temperature detector 18 decreases and the temperature of the first resistance temperature detector 16 increases. The flow sensor 10 can obtain an electric output according to the flow rate by detecting the difference between the resistance values of the first resistance temperature detector 16 and the second resistance temperature detector 18 with a bridge circuit (not shown).
本実施形態の場合、配線部２２は、中央部分が前記基板１２表面から凸となる山形状であることにより、流路２８中の気体により近づくことができ、しかも配線部２２と基板１２の間も容易に気体が流通することができる。また、配線部２２を基板１２表面から離れた位置に保持することができるので、配線部２２で生じた熱が基板１２へ逃げるのを防ぐことができる。したがってフローセンサ１０は、効率的に流路２８中の気体を加熱することができる。 In the case of the present embodiment, the wiring portion 22 has a mountain shape in which the central portion is convex from the surface of the substrate 12, so that the wiring portion 22 can be closer to the gas in the flow path 28, and moreover, between the wiring portion 22 and the substrate 12. The gas can be easily circulated. Further, since the wiring portion 22 can be held at a position away from the surface of the substrate 12, it is possible to prevent the heat generated in the wiring portion 22 from escaping to the substrate 12. Therefore, the flow sensor 10 can efficiently heat the gas in the flow path 28.
抵抗体２０は、短絡部２６を介して接続部２４と接続する構成としたことにより、配線部２２をより効率的に加熱することができる。 Since the resistor 20 is configured to be connected to the connecting portion 24 via the short-circuit portion 26, the wiring portion 22 can be heated more efficiently.
配線部２２は、両端が基板１２に固定された接続部２４に接続された両持ち梁構造であることから、熱膨張による変形を抑制することができる。したがってフローセンサ１０は、熱膨張による気体の流れに与える影響を少なくすることができるので、測定精度を向上することができる。また配線部２２は、中央部分が前記基板１２表面から凸となる山形状であることにより、熱膨張によって生じる熱応力を緩和することができる。 Since the wiring portion 22 has a double-sided beam structure in which both ends are connected to the connecting portion 24 fixed to the substrate 12, deformation due to thermal expansion can be suppressed. Therefore, the flow sensor 10 can reduce the influence of thermal expansion on the gas flow, so that the measurement accuracy can be improved. Further, since the central portion of the wiring portion 22 has a mountain shape that is convex from the surface of the substrate 12, the thermal stress generated by thermal expansion can be relaxed.
上記実施形態では、基板１２が、ＳｉＯ２基板３１と表面層１３で形成されている場合について説明したが、本発明はこれに限らず、酸化膜を備えたＳｉ基板と表面層１３で形成してもよいし、樹脂のみで形成してもよい。 In the above embodiment, the case where the substrate 12 is formed of the SiO 2 substrate 31 and the surface layer 13 has been described, but the present invention is not limited to this, and the substrate 12 is formed of the Si substrate provided with an oxide film and the surface layer 13. It may be formed only with a resin.
上記「（配線部の製造方法）」で示した手順に従い、実際に製造した発熱体１４及び測温体１６の顕微鏡写真を図４に示す。Ｓｉ基板上にポリイミドによる表面層１３が形成された基板１２を用いた。金属膜３４は、膜厚３００ｎｍのＰｔ膜をスパッタ法により形成した。配線部２２は、ホトレジスト３２をアセトン浸漬により除去し、ドライエッチングにより溝３８を形成して得た。これにより、線幅６μｍ、厚さ０．４μｍ、支持部からの高さ３０μｍの配線部２２を有する発熱体１４及び測温体１６を製造することができた。 FIG. 4 shows a micrograph of the heating element 14 and the resistance temperature detector 16 actually manufactured according to the procedure shown in the above “(Method for manufacturing the wiring portion)”. A substrate 12 having a surface layer 13 made of polyimide formed on a Si substrate was used. The metal film 34 was formed by forming a Pt film having a film thickness of 300 nm by a sputtering method. The wiring portion 22 was obtained by removing the polyether 32 by dipping it in acetone and forming a groove 38 by dry etching. As a result, it was possible to manufacture a heating element 14 and a temperature measuring element 16 having a wiring portion 22 having a line width of 6 μm, a thickness of 0.4 μm, and a height of 30 μm from the support portion.
２．変形例
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。上記実施形態の場合、膜応力によって中央部分が前記基板１２表面から凸となる山形状を有する配線部２２を形成する場合について説明したが、本発明はこれに限らない。
2. Modifications The present invention is not limited to the above embodiment, and can be appropriately modified within the scope of the gist of the present invention. In the case of the above embodiment, the case where the wiring portion 22 having a mountain shape whose central portion is convex from the surface of the substrate 12 is formed by the film stress has been described, but the present invention is not limited to this.
変形例に係る配線部２２の製造方法について、図５を参照して説明する。まず、ＳｉＯ２基板３１上に、熱硬化性樹脂を塗布し、熱硬化温度よりも低い仮硬化温度で加熱し、仮硬化樹脂層１３Ｂを形成する（図５Ａ）。次いで図５Ｂに示すようにホトレジスト３２を選択的に形成する。その後、図５Ｃに示すように、スパッタ法により金属膜３４を形成する。次いで、ホトレジスト３２をアセトンなどの有機溶媒を用いて除去する。同時にホトレジスト３２上に形成された金属膜３４もリフトオフにより除去される（図５Ｄ）。形成された開口部３６の仮硬化樹脂層１３Ｂを例えばフッ酸によるエッチングにより除去して溝３８を形成することにより、仮硬化表面層１３Ｃが得られる（図５Ｅ）。最後に熱硬化温度より高い本硬化温度で加熱する。そうすると仮硬化表面層１３Ｃが硬化することにより、表面層１３が得られる。同時に、仮硬化表面層１３Ｃが硬化する際の熱収縮により、中央部分が前記基板１２表面から凸となる山形状を有し両持ち梁構造の配線部２２を得ることができる（図５Ｆ）。 A method of manufacturing the wiring portion 22 according to the modified example will be described with reference to FIG. First, a thermosetting resin is applied onto the SiO 2 substrate 31 and heated at a temporary curing temperature lower than the thermosetting temperature to form a temporary curing resin layer 13B (FIG. 5A). Then, as shown in FIG. 5B, the photoresist 32 is selectively formed. Then, as shown in FIG. 5C, the metal film 34 is formed by a sputtering method. Then, the photoresist 32 is removed using an organic solvent such as acetone. At the same time, the metal film 34 formed on the photoresist 32 is also removed by lift-off (FIG. 5D). The temporarily cured surface layer 13C is obtained by removing the temporarily cured resin layer 13B of the formed opening 36 by, for example, etching with hydrofluoric acid to form a groove 38 (FIG. 5E). Finally, it is heated at the main curing temperature higher than the thermosetting temperature. Then, the temporarily cured surface layer 13C is cured, so that the surface layer 13 is obtained. At the same time, due to heat shrinkage when the temporarily cured surface layer 13C is cured, a wiring portion 22 having a mountain shape in which the central portion is convex from the surface of the substrate 12 and having a double-sided beam structure can be obtained (FIG. 5F).
別の変形例に係る配線部２２の製造方法について、図６を参照して説明する。まず、ＳｉＯ２基板３１上に熱硬化性樹脂で凸部４０を形成する（図６Ａ）。次いで、凸部４０を含むＳｉＯ２基板３１を覆うように熱硬化性樹脂で山形状部４１を有する表面層１３Ｄを形成する（図６Ｂ）。次いで図６Ｃに示すようにホトレジスト３２を選択的に形成する。その後、図６Ｄに示すように、スパッタ法により金属膜３４を形成する。次いで、ホトレジスト３２をアセトンなどの有機溶媒を用いて除去する。同時にホトレジスト３２上に形成された金属膜３４もリフトオフにより除去する（図６Ｅ）。最後に、形成された開口部３６の表面層１３Ｄを例えばフッ酸によるエッチングにより除去して溝３８を形成する（図６Ｆ）。そうすると、凸部に沿って中央部分が前記基板１２表面から凸となる山形状を有し両持ち梁構造の配線部２２を得ることができる。 A method of manufacturing the wiring portion 22 according to another modification will be described with reference to FIG. First, the convex portion 40 is formed on the SiO 2 substrate 31 with a thermosetting resin (FIG. 6A). Next, a surface layer 13D having a mountain-shaped portion 41 is formed of a thermosetting resin so as to cover the SiO 2 substrate 31 including the convex portion 40 (FIG. 6B). Then, as shown in FIG. 6C, the photoresist 32 is selectively formed. Then, as shown in FIG. 6D, the metal film 34 is formed by a sputtering method. Then, the photoresist 32 is removed using an organic solvent such as acetone. At the same time, the metal film 34 formed on the photoresist 32 is also removed by lift-off (FIG. 6E). Finally, the surface layer 13D of the formed opening 36 is removed by etching with hydrofluoric acid, for example, to form a groove 38 (FIG. 6F). Then, a wiring portion 22 having a double-sided beam structure having a mountain shape in which the central portion is convex from the surface of the substrate 12 along the convex portion can be obtained.
上記実施形態、変形例、及び別の変形例に係る製造方法は、適宜組み合わせてもよい。例えば、実施形態と別の変形例、変形例と別の変形例の組み合わせにより、配線部２２を製造することとしてもよい。 The above-described embodiment, modified example, and manufacturing method according to another modified example may be appropriately combined. For example, the wiring portion 22 may be manufactured by combining the embodiment and another modified example, and the modified example and another modified example.
上述したとおり、フローセンサ１０は、抵抗体２０に含まれる配線部２２の中央部分が基板１２表面から凸となる山形状を有することによって、流路（図２、参照符号２８）内の気体を効率的に加熱できるという効果が得られる。配線部２２の中央部分を、より確実に山形状として所望の効果が十分に発揮されるように、抵抗体２０に含まれる接続部２４、短絡部２６および配線部２２を適宜変更することができる。 As described above, the flow sensor 10 has a mountain shape in which the central portion of the wiring portion 22 included in the resistor 20 is convex from the surface of the substrate 12, so that the gas in the flow path (FIG. 2, reference numeral 28) can be removed. The effect of being able to heat efficiently can be obtained. The connection portion 24, the short-circuit portion 26, and the wiring portion 22 included in the resistor 20 can be appropriately changed so that the central portion of the wiring portion 22 is more reliably formed into a mountain shape and the desired effect is sufficiently exhibited. ..
例えば、図７Ａの変形例（１）に示すフローセンサ１０Ａのように、台形状の接続部２４Ａと、接続部２４Ａ側の幅が広い配線部２６Ａとを、基板１２Ａ上に設けることができる。接続部２４Ａは、電極２１側を下底とする等脚台形状である。配線部２６Ａは、直線部２６Ａａと、拡幅部２６Ａｂとを含む。拡幅部２６Ａｂは、一方の側が傾斜することによって、直線部２６Ａａと接続部２４Ａとの間で接続部２４Ａ側に向けて徐々に拡幅している。これにより、配線部２６Ａの幅は、接続部２４Ａ側が最も大きく、徐々に減少した後に一定になっている。
For example, as in the flow sensor 10A shown in the modified example (1) of FIG. 7A, a trapezoidal connecting portion 24A and a wide wiring portion 26A on the connecting portion 24A side can be provided on the substrate 12A. The connecting portion 24A has an isosceles trapezoidal shape with the electrode 21 side as the lower base. The wiring portion 26A includes a straight portion 26Aa and a widening portion 26Ab. The widening portion 26Ab is gradually widened toward the connecting portion 24A side between the straight portion 26Aa and the connecting portion 24A by inclining one side. Thus, the width of the wiring portion 26A, the connection portion 24 A side is the largest, is constant after gradually decreased.
フローセンサ１０Ａは、台形状の接続部２４Ａと接続部２４Ａ側の幅が広い配線部２６Ａとが基板１２Ａ上に設けられている。接続部２４Ａから配線部の中央部分に向けて先細りの形状となる。これによって配線部の中央部分が曲がり易くなり、配線部の中央部分が基板１２Ａ表面から凸となる山形状を、より確実に得ることができる。
In the flow sensor 10A, a trapezoidal connecting portion 24A and a wide wiring portion 26A on the connecting portion 24A side are provided on the substrate 12A . A tapered shape toward the connecting section 24A on the center part of the wiring portion. As a result, the central portion of the wiring portion is easily bent, and a mountain shape in which the central portion of the wiring portion is convex from the surface of the substrate 12A can be obtained more reliably.
図７Ｂの変形例（２）に示すフローセンサ１０Ｂのように、直線部２６Ｂａと拡幅部２６Ｂｂとを含む配線部２６Ｂを設けることもできる。拡幅部２６Ｂｂは、直線部２６Ｂａと接続部２４との間で接続部２４側に向けて徐々に拡幅している。同様の拡幅部２６Ｂｂを、梯子形状の短絡部２６と接続部２４との間に２つ配置して、短絡部２６Ｃを構成することもできる。接続部２４と電極２１との間には、３つの直線部２６Ｂａを設けて短絡部２６Ｄを構成してもよい。
As in the flow sensor 10B shown in the modified example (2) of FIG. 7B, the wiring portion 26B including the straight portion 26Ba and the widening portion 26Bb can be provided. The widening portion 26Bb is gradually widened between the straight portion 26Ba and the connecting portion 24 toward the connecting portion 24 side. Two similar widening portions 26Bb may be arranged between the ladder-shaped short-circuit portion 26 and the connection portion 24 to form the short-circuit portion 26C. Three straight portions 26Ba may be provided between the connecting portion 24 and the electrode 21 to form the short-circuit portion 26D.
フローセンサ１０Ｂは、接続部２４側の幅が広い配線部２６Ｂ，短絡部２６Ｃが基板１２Ｂに設けられている。短絡部２６Ｃには配線部（図示せず）が接続されているので、接続部２４から配線部の中央部分に向けて先細りの形状となる。これによって配線部の中央部分が曲がり易くなり、配線部の中央部分が基板１２Ｂ表面から凸となる山形状を、より確実に得ることができる。３つの直線部２６Ｂａを含む短絡部２６Ｄが電極２１と接続部２４との間に設けられていることも、配線部の中央部分が山形状となるのを促進する。
In the flow sensor 10B, a wide wiring portion 26B and a short-circuit portion 26C on the connection portion 24 side are provided on the substrate 12B. Since a wiring portion (not shown) is connected to the short-circuit portion 26C, the shape is tapered from the connection portion 24 toward the central portion of the wiring portion. As a result, the central portion of the wiring portion can be easily bent, and a mountain shape in which the central portion of the wiring portion is convex from the surface of the substrate 12B can be obtained more reliably. The fact that the short-circuit portion 26D including the three straight portions 26Ba is provided between the electrode 21 and the connection portion 24 also promotes the central portion of the wiring portion to have a mountain shape.
配線部２２は、上面視において、一端から他端までの太さが均一でなくてもよい。図８Ａに示す変形例（１）の配線部２２Ａのように、両端２２Ａａから中央領域２２Ａｂにかけて幅が減少する中細り形状であってもよい。また、図８Ｂに示す変形例（２）の配線部２２Ｂのように、両端２２Ｂａから中央領域２２Ｂｂにかけて幅が増加する中太り形状としてもよい。 The thickness of the wiring portion 22 does not have to be uniform from one end to the other end when viewed from above. Like the wiring portion 22A of the modified example (1) shown in FIG. 8A, the shape may be a medium-thin shape in which the width decreases from both ends 22Aa to the central region 22Ab. Further, as in the wiring portion 22B of the modified example (2) shown in FIG. 8B, a medium-thick shape may be formed in which the width increases from both ends 22Ba to the central region 22Bb.
配線部２２Ａ，２２Ｂは、両端部２２Ａａ、２２Ｂａと中央領域２２Ａｂ，２２Ｂｂとの幅が異なっているので、配線部２２Ａ，２２Ｂに与えられた力は、幅の細い部分に集中する。配線部２２Ａでは、中央領域２２Ａｂが曲がり易く、配線部２２Ｂでは両端２２Ｂａが曲がり易い。これによって、配線部２２Ａ，２２Ｂは、中央部分が基板（図示せず）から凸となる山形状をより確実に得ることができる。 Since the widths of the wiring portions 22A and 22B are different between the both end portions 22Aa and 22Ba and the central regions 22Ab and 22Bb, the force applied to the wiring portions 22A and 22B is concentrated on the narrow portion. In the wiring portion 22A, the central region 22Ab is easily bent, and in the wiring portion 22B, both ends 22Ba are easily bent. As a result, the wiring portions 22A and 22B can more reliably obtain a mountain shape in which the central portion is convex from the substrate (not shown).
図９に示す変形例（３）の配線部２２Ｃのように、２層の膜の積層構造としてもよい。配線部２２Ｃは、内部に作用する応力が異なる２層の膜２２Ｃａ，２２Ｃｂを含む。具体的には、配線部２２Ｃは、圧縮応力が作用する第１の膜２２Ｃａの上に、引張り応力が作用する第２の膜２２Ｃｂが積層されている。第１の膜２２Ｃａおよび第２の膜２２Ｃｂは、材料を適宜組み合わせて形成することができる。例えば、第１の膜２２ＣａとしてＳｉＯ２を用いる場合には、第２の膜２２Ｃｂには、Ｐｔを用いることができる。 As in the wiring portion 22C of the modified example (3) shown in FIG. 9, a two-layer film laminated structure may be used. The wiring portion 22C includes two layers of films 22Ca and 22Cb having different stresses acting on the inside. Specifically, in the wiring portion 22C, a second film 22Cb on which tensile stress acts is laminated on the first film 22Ca on which compressive stress acts. The first film 22Ca and the second film 22Cb can be formed by appropriately combining materials. For example, when SiO 2 is used as the first film 22Ca, Pt can be used for the second film 22Cb.
配線部２２Ｃの下層を構成している第１の層２２Ｃａには、矢印Ａ１，Ａ２で示されるように両端から内側に向かう圧縮応力が作用する。一方、配線部２２Ｃの上層を構成している第２の層２２Ｃｂには、矢印Ｂ１，Ｂ２で示されるように内側から両端に向かう引張り応力が作用する。配線部２２Ｃは、下層に圧縮応力が作用し、上層には引張り応力が作用することから、中央部分が基板（図示せず）から凸となる山形状をより確実に得ることができる。 As shown by arrows A1 and A2, compressive stress from both ends to the inside acts on the first layer 22Ca constituting the lower layer of the wiring portion 22C. On the other hand, tensile stress acts from the inside toward both ends as shown by arrows B1 and B2 on the second layer 22Cb forming the upper layer of the wiring portion 22C. Since compressive stress acts on the lower layer and tensile stress acts on the upper layer of the wiring portion 22C, it is possible to more reliably obtain a mountain shape in which the central portion is convex from the substrate (not shown).
フローセンサ１０Ａに示した台形状の接続部２４Ａは、フローセンサ１０Ｂに示した短絡部２６Ｃ，２６Ｄのいずれかと組み合わせることができる。短絡部２６Ｃ，２６Ｄには、幅の変化している配線部（配線部２２Ａまたは配線部２２Ｂ）を接続してもよい。この場合の配線部は、配線部２２Ｃのように、圧縮応力が作用する第１の膜２２Ｃａの上に、引張り応力が作用する第２の膜２２Ｃｂを積層して構成することもできる。
The trapezoidal connecting portion 24A shown in the flow sensor 10A can be combined with any of the short-circuited portions 26C and 26D shown in the flow sensor 10B. Wiring portions (wiring portion 22A or wiring portion 22B) having varying widths may be connected to the short-circuit portions 26C and 26D. In this case, the wiring portion may be formed by laminating a second film 22Cb on which tensile stress acts on the first film 22Ca on which compressive stress acts, as in the wiring portion 22C.
１０ フローセンサ
１２ 基板
１３ 表面層
１３Ｂ 仮硬化樹脂層
１４ 発熱体
１６ 第１測温体（測温体）
１８ 第２測温体（測温体）
２０ 抵抗体
２２ 配線部
２４ 接続部
２６ 短絡部
４１ 山形状部
10 Flow sensor 12 Substrate 13 Surface layer 13B Temporarily cured resin layer 14 Heating element 16 First resistance temperature detector (resistance temperature detector)
18 Second resistance temperature detector (resistance temperature detector)
20 Resistor 22 Wiring part 24 Connection part 26 Short circuit part 41 Mountain-shaped part
Claims (10)
前記発熱体及び前記測温体の各々は、並列に配置された複数の配線部と、前記複数の配線部のうち隣り合う２個の配線部の一端同士を接続する接続部と、前記接続部に隣接して設けられ、前記隣り合う２個の配線部同士を電気的に接続する梯子形状の短絡部と、を有する抵抗体を含み、
前記抵抗体は前記接続部において前記基板に固定されており、
前記複数の配線部の各々は中央部分が前記基板の表面から凸となる山形状である
ことを特徴とするフローセンサ。 In a flow sensor including a substrate on which a heating element and a temperature measuring element arranged on both sides of the heating element are formed on the surface thereof.
Each of the heating element and the temperature measuring element has a plurality of wiring portions arranged in parallel, a connection portion for connecting one ends of two adjacent wiring portions among the plurality of wiring portions, and the connection portion. Includes a resistor that is provided adjacent to and has a ladder-shaped short circuit that electrically connects the two adjacent wiring portions.
The resistor is fixed to the substrate at the connection portion, and is fixed to the substrate.
A flow sensor characterized in that each of the plurality of wiring portions has a mountain shape in which a central portion thereof is convex from the surface of the substrate.
山形状部を有する前記表面層を形成する工程と、
スパッタ法を用いて金属膜を前記表面層上に蒸着する工程と、
前記金属膜の周囲の前記表面層を選択的に除去し、中央部分が前記基板の表面から凸となる山形状を有し前記金属膜で形成された前記抵抗体を形成する工程と
を備えることを特徴とするフローセンサの製造方法。 In the method for manufacturing a flow sensor in which a resistor is formed on the surface layer of a substrate,
The step of forming the surface layer having a mountain-shaped portion and
A step of depositing a metal film on the surface layer using a sputtering method, and
The present invention includes a step of selectively removing the surface layer around the metal film to form the resistor formed of the metal film having a mountain shape in which the central portion is convex from the surface of the substrate. A method for manufacturing a flow sensor.
熱硬化性樹脂を塗布して熱硬化温度より低い仮硬化温度で加熱し、仮硬化樹脂層を形成する工程と、
スパッタ法を用いて金属膜を前記仮硬化樹脂層上に蒸着する工程と、
前記金属膜の周囲の前記仮硬化樹脂層を選択的に除去することにより仮硬化表面層を得る工程と、
熱硬化温度より高い本硬化温度で加熱して前記仮硬化表面層を硬化することにより前記表面層を得ると共に、前記仮硬化表面層が硬化する際の熱収縮により、中央部分が前記基板の表面から凸となる山形状を有し前記金属膜で形成された前記抵抗体を形成する工程と
を備えることを特徴とするフローセンサの製造方法。
In the method for manufacturing a flow sensor in which a resistor is formed on the surface layer of a substrate,
The process of applying a thermosetting resin and heating it at a temporary curing temperature lower than the thermosetting temperature to form a temporary curing resin layer, and
A step of depositing a metal film on the temporarily cured resin layer using a sputtering method, and
A step of obtaining a temporarily cured surface layer by selectively removing the temporarily cured resin layer around the metal film, and
The surface layer is obtained by curing the temporarily cured surface layer by heating at a main curing temperature higher than the thermosetting temperature, and the central portion is the surface of the substrate due to heat shrinkage when the temporarily cured surface layer is cured. A method for manufacturing a flow sensor, which comprises a step of forming the resistor having a chevron shape and formed of the metal film.
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| JPH06103213B2 (en) * | 1987-06-22 | 1994-12-14 | 株式会社寺岡精工 | Strain gauge type load cell |
| JP2847970B2 (en) * | 1989-12-28 | 1999-01-20 | 富士電機株式会社 | Gas sensor and method of manufacturing the same |
| JP3085749B2 (en) * | 1991-09-13 | 2000-09-11 | 株式会社リコー | Gas sensor |
| JPH06176902A (en) * | 1992-12-04 | 1994-06-24 | Matsushita Electric Ind Co Ltd | Fixed resistor and manufacture thereof |
| JPH08313320A (en) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | Measuring element for thermal air flow meter and thermal air flowmeter with it |
| EP1291621B1 (en) * | 2000-05-19 | 2017-09-27 | Mitsubishi Denki Kabushiki Kaisha | Heat-sensitive type flow rate detecting element and holder therefor |
| JP4806850B2 (en) * | 2001-01-24 | 2011-11-02 | パナソニック株式会社 | Actuator |
| JP2003344136A (en) * | 2002-05-24 | 2003-12-03 | Denso Corp | Flow rate measurement device |
| US6713399B1 (en) * | 2002-12-23 | 2004-03-30 | Uni-Circuit Inc. | Carbon-conductive ink resistor printed circuit board and its fabrication method |
| JP2007266380A (en) * | 2006-03-29 | 2007-10-11 | Matsushita Electric Ind Co Ltd | Semiconductor image pickup device and its manufacturing method |
| JP5145990B2 (en) * | 2008-02-07 | 2013-02-20 | 株式会社デンソー | Air flow sensor |
| JP5082915B2 (en) * | 2008-02-21 | 2012-11-28 | 株式会社デンソー | Air flow sensor |
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