JP6831421B2 - 電圧基準のパワーサイクリング - Google Patents
電圧基準のパワーサイクリング Download PDFInfo
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/461—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using an operational amplifier as final control device
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/468—Regulating voltage or current wherein the variable actually regulated by the final control device is dc characterised by reference voltage circuitry, e.g. soft start, remote shutdown
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/124—Sampling or signal conditioning arrangements specially adapted for A/D converters
- H03M1/1245—Details of sampling arrangements or methods
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
- H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
- H03M1/46—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
- H03M1/466—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter using switched capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/156—One or more switches are realised in the feedback circuit of the amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/234—Indexing scheme relating to amplifiers the input amplifying stage being one or more operational amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/267—A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45031—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are compositions of multiple transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45116—Feedback coupled to the input of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
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- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
Description
101 増幅器
103 中間ノード
105 出力ノード
107 容量性フィードバック回路
202 電界効果トランジスタ(FET)
206 共通ソースノード
208 電流ミラー回路
210 電流シンク回路
212 抵抗器
218 コンデンサ
220 コンデンサ
238 スイッチ
240 スイッチ
300 SARADC回路
302 リザーバコンデンサ
304 スイッチ
306 スイッチ
414 ゲイン縮退抵抗器
416 ゲイン縮退抵抗器
424 電流ソース回路
426 抵抗器
428 カスコード化ミラー回路
440 コンデンサ
442 コンデンサ
502 マルチプレクサ回路
504 入力ノード
506 出力ノード
508 温度センサ回路
602 基準バッファ回路
604 増幅器
606 出力ノード
607 スイッチ
608 基準ノード
Claims (17)
- 再開動作の際に電力効率のためおよび過度的回復のためにパワーサイクリングが可能な電圧基準回路であって、前記電圧基準回路が、
第1および第2の入力ノードを備える増幅器であって、前記増幅器が、温度補償電圧であって、前記温度補償電圧を生成するように意図的な不整合をもって構成された第1および第2のトランジスタによって提供される温度補償電圧に基づいて、出力ノードで基準電圧を生成するように構成された増幅器と、
前記第1および第2の入力ノードにわたる電圧差として前記出力ノードで前記基準電圧の一部を供給するように構成された容量性フィードバック回路であって、前記容量性フィードバック回路が、互いに直列な第1および第2のコンデンサを含む容量性電圧分配器を備える、容量性フィードバック回路と、
を備え、
前記第1のコンデンサを跨ぐ第1のスイッチであって、前記電圧基準回路の反復的な動作サイクルの間はオフであり、前記電圧基準回路の反復的な電源オフサイクルの間はオンである、第1のスイッチと、
前記第2のコンデンサを跨ぐ第2のスイッチであって、前記電圧基準回路の動作サイクルの間はオフであり、前記電圧基準回路の反復的な電源オフサイクルの間はオンである、第2のスイッチと、を備える、電圧基準回路。 - 前記容量性フィードバック回路が、容量性電圧分配器回路を前記出力ノードとグラウンド基準ノードとの間に備える、請求項1に記載の電圧基準回路。
- 前記第1のコンデンサが、前記出力ノードに結合された第1の端子と、中間ノードに結合され、かつ、前記増幅器の第1の入力に結合された第2の端子と、を備え、
前記第2のコンデンサが、前記中間ノードに結合された第1の端子と、前記グラウンド基準ノードに結合された第2の端子と、 を備える、請求項2に記載の電圧基準回路。 - 前記増幅器が、前記動作サイクルの間は電力が前記増幅器に提供されるのを許容するためにオンであり、前記電圧基準回路の反復的な電源オフサイクルの間は前記増幅器への電力を禁止するためにオフである、電源オフスイッチを備える、請求項1に記載の電圧基準回路。
- 前記温度補償電圧が、異なる第1および第2のFET閾値電圧間の差によって提供される、請求項1〜4のいずれかに記載の電圧基準回路。
- 前記第1および第2のFETが、前記電圧基準回路の電源オフサイクルの間、中断可能な電流を提供した差動対として配置される、請求項5に記載の電圧基準回路。
- 前記第2のFETが、前記第2のFETのソース/ドレイン端子に直接的または間接的に電気接続され、前記出力ノードに電気接続された、ゲート端子を備える、請求項6に記載の電圧基準回路。
- 前記増幅器が、前記増幅器の入力で生成される温度補償電圧に基づいて基準電圧を提供する出力ノードを備える、演算相互コンダクタンス増幅器(OTA)を備え、
前記容量性分配器が、前記出力ノードとグラウンドまたは他の基準ノードとの間にあり、前記容量性分配器内の中間ノードが前記増幅器の入力に電気結合され、
電源オフサイクルの間、前記容量性分配器回路を初期化するように構成されたスイッチングネットワークをさらに備える、 請求項1に記載の電圧基準回路。 - 前記増幅器が、互いにソース結合され、電流ソース回路または電流シンク回路に電気結合された第1および第2のFETを備え、前記電流ソース回路または電流シンク回路が、ネイティブモードまたはデプレッションモードのFETを備える、請求項8に記載の電圧基準回路。
- 前記増幅器が、前記温度補償電圧を生成するために異なる閾値電圧を有する第1および第2のFETを備え、前記第1および第2のFETのボディ端子が、前記電圧基準回路の動作サイクルの間、異なる電圧を提供することによってそれぞれバイアスがかけられる異なるノードに接続される、請求項8に記載の電圧基準回路。
- 再開動作の際に電力効率のためおよび過度的回復のためにパワーサイクリングが可能な電圧基準を提供する方法であって、前記方法が、
温度補償電圧に基づいて基準電圧を生成することと、
前記電圧基準の動作サイクルの間、前記基準電圧の前記生成に使用するための容量性フィードバックを提供することと、
前記電圧基準の電源オフサイクルの間、前記容量性フィードバックを初期化することと、を含む、方法。 - 前記容量性フィードバック内の中間ノードを、前記電圧基準の電源オフサイクルの間、指定の初期化ノード電圧に接続することをさらに含む、請求項11に記載の方法。
- 容量性フィードバックを提供することが、前記電圧基準の動作サイクルの間、容量性分配器の中間電圧で第1および第2のFETの差動対にバイアスをかけることを含み、異なる閾値電圧を有する第1および第2のFETを使用して前記温度補償電圧を生成することをさらに含む、請求項11または12のいずれか1項に記載の方法。
- アナログ−デジタル変換器(ADC)回路の容量性デジタル−アナログ変換器(CAPDAC)上への関心のアナログ信号のサンプリングの間、基準電圧生成器回路または基準電圧バッファ回路の少なくとも一方を電源オフにすることを含み、前記関心のアナログ信号の前記サンプリングに続く保持フェーズの間、基準電圧生成器回路または基準電圧バッファ回路の少なくとも一方を電源オンにすることを含む、請求項11に記載の方法。
- 逐次比較ルーチン(SAR)型ビットトライアルの間使用するためのリザーバコンデンサ上へ基準電圧またはバッファされた基準電圧をサンプリングすることと、前記SAR型ビットトライアルの間、後続のサンプリングされた関心のアナログ信号の次のSAR型変換まで、前記基準電圧生成器回路または前記基準電圧バッファ回路の少なくとも一方を電源オフにすることと、を含む、請求項14に記載の方法。
- 温度補償電圧に基づいて基準電圧を生成することが、演算相互コンダクタンス増幅器(OTA)回路であって、前記OTA回路の入力で前記温度補償電圧を入力オフセット電圧として生成するように配置された前記容量性フィードバックを有する、演算相互コンダクタンス増幅器(OTA)回路、を使用することを含む、請求項15に記載の方法。
- 前記電圧基準の前記動作サイクルの間、前記生成された基準電圧を動的に帯域制限することを含む、請求項16に記載の方法。
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US15/969,175 | 2018-05-02 | ||
US15/969,175 US10528070B2 (en) | 2018-05-02 | 2018-05-02 | Power-cycling voltage reference |
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JP6831421B2 true JP6831421B2 (ja) | 2021-02-17 |
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EP (1) | EP3564772A1 (ja) |
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CN (1) | CN110442180B (ja) |
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CN110377094B (zh) * | 2019-05-17 | 2020-11-27 | 东南大学 | 一种低温漂极低功耗线性稳压器 |
US10855277B1 (en) * | 2020-01-27 | 2020-12-01 | Qualcomm Incorporated | Mitigating reliability issues in a low-voltage reference buffer driven by a high-voltage circuit |
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