JP6814195B2 - 特にマイクロリソグラフィ投影露光装置用のミラー - Google Patents

特にマイクロリソグラフィ投影露光装置用のミラー Download PDF

Info

Publication number
JP6814195B2
JP6814195B2 JP2018501301A JP2018501301A JP6814195B2 JP 6814195 B2 JP6814195 B2 JP 6814195B2 JP 2018501301 A JP2018501301 A JP 2018501301A JP 2018501301 A JP2018501301 A JP 2018501301A JP 6814195 B2 JP6814195 B2 JP 6814195B2
Authority
JP
Japan
Prior art keywords
optical system
mirror
layer
protective layer
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018501301A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018522281A5 (https=
JP2018522281A (ja
Inventor
ディール オリバー
ディール オリバー
ハイド ケルスティン
ハイド ケルスティン
エンキッシュ ハルトムット
エンキッシュ ハルトムット
カリスキー マトゥス
カリスキー マトゥス
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2018522281A publication Critical patent/JP2018522281A/ja
Publication of JP2018522281A5 publication Critical patent/JP2018522281A5/ja
Application granted granted Critical
Publication of JP6814195B2 publication Critical patent/JP6814195B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2018501301A 2015-07-15 2016-07-07 特にマイクロリソグラフィ投影露光装置用のミラー Active JP6814195B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015213253.6 2015-07-15
DE102015213253.6A DE102015213253A1 (de) 2015-07-15 2015-07-15 Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
PCT/EP2016/066178 WO2017009185A1 (de) 2015-07-15 2016-07-07 Spiegel, insbesondere für eine mikrolithographische projektionsbelichtungsanlage

Publications (3)

Publication Number Publication Date
JP2018522281A JP2018522281A (ja) 2018-08-09
JP2018522281A5 JP2018522281A5 (https=) 2019-08-15
JP6814195B2 true JP6814195B2 (ja) 2021-01-13

Family

ID=56497732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018501301A Active JP6814195B2 (ja) 2015-07-15 2016-07-07 特にマイクロリソグラフィ投影露光装置用のミラー

Country Status (5)

Country Link
US (1) US10331048B2 (https=)
EP (1) EP3323022A1 (https=)
JP (1) JP6814195B2 (https=)
DE (1) DE102015213253A1 (https=)
WO (1) WO2017009185A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017200667A1 (de) 2017-01-17 2018-07-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage oder ein Inspektionssystem
EP3454119B1 (en) 2017-09-09 2023-12-27 IMEC vzw Euv absorbing alloys

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086443A (en) * 1990-08-03 1992-02-04 The United States Of America As Represented By The United States Department Of Energy Background-reducing x-ray multilayer mirror
EP1333323A3 (en) * 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
JP2007329368A (ja) * 2006-06-09 2007-12-20 Canon Inc 多層膜ミラー、評価方法、露光装置及びデバイス製造方法
JPWO2008065821A1 (ja) * 2006-11-27 2010-03-04 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法
EP2155932A2 (de) * 2007-05-31 2010-02-24 Carl Zeiss SMT AG Verfahren zur herstellung eines optischen elementes mit hilfe von abformung, optisches element hergestellt nach diesem verfahren, kollektor und beleuchtungssystem
NL2003299A (en) * 2008-08-28 2010-03-11 Asml Netherlands Bv Spectral purity filter and lithographic apparatus.
DE102009032779A1 (de) 2009-07-10 2011-01-13 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009033511A1 (de) 2009-07-15 2011-01-20 Carl Zeiss Smt Ag Mikrospiegelanordnung mit Anti-Reflexbeschichtung sowie Verfahren zu deren Herstellung
EP2463693A3 (de) * 2009-07-15 2013-02-20 Carl Zeiss SMT GmbH Mikrospiegelanordnung mit Beschichtung sowie Verfahren zu deren Herstellung
DE102009049640B4 (de) 2009-10-15 2012-05-31 Carl Zeiss Smt Gmbh Projektionsobjektiv für eine mikrolithographische EUV-Projektionsbelichtungsanlage
EP2513686B1 (en) 2009-12-15 2019-04-10 Carl Zeiss SMT GmbH Reflective optical element for euv lithography
DE102009054653A1 (de) 2009-12-15 2011-06-16 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Substrat für einen solchen Spiegel, Verwendung einer Quarzschicht für ein solches Substrat, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel oder einem solchen Substrat und Projetktionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
EP2550563A1 (en) * 2010-03-24 2013-01-30 ASML Netherlands B.V. Lithographic apparatus and spectral purity filter
DE102011003357A1 (de) 2011-01-31 2012-08-02 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102011075579A1 (de) * 2011-05-10 2012-11-15 Carl Zeiss Smt Gmbh Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
DE102011084117A1 (de) * 2011-10-07 2013-04-11 Carl Zeiss Smt Gmbh Reflektives optisches Element für den EUV-Wellenlängenbereich, Verfahren zur Erzeugung und zur Korrektur eines solchen Elements, Projektionsobjektiv für die Mikrolithographie mit einem solchen Element und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102011085358B3 (de) * 2011-10-28 2012-07-12 Carl Zeiss Smt Gmbh Optische Anordnung für die EUV-Lithographie und Verfahren zum Konfigurieren einer solchen optischen Anordnung
DE102012202675A1 (de) 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
DE102013215541A1 (de) * 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102014219755A1 (de) 2013-10-30 2015-04-30 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102014204660A1 (de) 2014-03-13 2015-09-17 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102015213249A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegels, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage

Also Published As

Publication number Publication date
DE102015213253A1 (de) 2017-01-19
EP3323022A1 (de) 2018-05-23
US20180217507A1 (en) 2018-08-02
US10331048B2 (en) 2019-06-25
JP2018522281A (ja) 2018-08-09
WO2017009185A1 (de) 2017-01-19

Similar Documents

Publication Publication Date Title
TWI556014B (zh) 用於極紫外線波長範圍的反射鏡、此反射鏡的基底、包含此反射鏡或基底的微影投影物鏡以及包含此投影物鏡的微影投影曝光裝置
US11281088B2 (en) Reflective mask blank for EUV exposure, and reflective mask
US7771898B2 (en) Multilayer mirror, evaluation method, exposure apparatus, device manufacturing method
CN102770806B (zh) 用于极紫外光刻的反射掩模及euv光刻设备
JP5951010B2 (ja) 多層ミラー、多層ミラーを生成する方法およびリソグラフィ装置
JP2014514741A (ja) 偏向ミラー及び当該偏向ミラーを備えたマイクロリソグラフィ用の投影露光装置
KR101288782B1 (ko) Ｕｖ 또는 ｅｕｖ 리소그래피용 광학 소자
WO2002084671A1 (en) Multi-layered film reflector manufacturing method
EP2681625A1 (en) Lithograpic apparatus, spectral purity filter and device manufacturing method
KR102542986B1 (ko) 반사 굴절 렌즈 및 이러한 렌즈를 포함하는 광학 시스템
US11086055B2 (en) Mirror, in particular for a microlithographic projection exposure apparatus or an inspection system
JP2010533370A (ja) マイクロリソグラフィ投影露光装置の光学システム
KR100942324B1 (ko) 측정장치, 노광장치, 및 디바이스 제조방법
JP6444999B2 (ja) 分離コーティングを有するミラーの表面補正
JP2003241049A (ja) 光学素子保持方法、光学素子研磨加工方法及び光学素子成膜方法
JP6814195B2 (ja) 特にマイクロリソグラフィ投影露光装置用のミラー
CN110692016A (zh) 图案化装置
TW201802499A (zh) Ｅｕｖ波長範圍的反射鏡
JP5162560B2 (ja) フライアイインテグレータ、イルミネータ、リソグラフィ装置および方法
JP2025523751A (ja) Ｅｕｖリソグラフィ用反射部材
JP2018522281A5 (https=)
CN112639612B (zh) 决定要引入光刻掩模的基板的一个或多个像素的效应的方法和设备
KR102398954B1 (ko) 특히 마이크로리소그래픽 투영 노광 장치용 광학 시스템
JP2019144569A (ja) 反射光学素子及びマイクロリソグラフィ投影露光装置の光学系
JP4524976B2 (ja) 多層膜反射鏡の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190704

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190704

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200318

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200526

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200715

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201208

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201218

R150 Certificate of patent or registration of utility model

Ref document number: 6814195

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250