JP6800610B2 - 光電変換装置及び画像読み取り装置 - Google Patents

光電変換装置及び画像読み取り装置 Download PDF

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Publication number
JP6800610B2
JP6800610B2 JP2016103715A JP2016103715A JP6800610B2 JP 6800610 B2 JP6800610 B2 JP 6800610B2 JP 2016103715 A JP2016103715 A JP 2016103715A JP 2016103715 A JP2016103715 A JP 2016103715A JP 6800610 B2 JP6800610 B2 JP 6800610B2
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semiconductor region
recess
photoelectric conversion
main surface
semiconductor
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JP2016103715A
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Japanese (ja)
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JP2017212303A5 (https=
JP2017212303A (ja
Inventor
鈴木　達也
達也 鈴木
小倉　正徳
正徳 小倉
隆典 鈴木
隆典 鈴木
潤 伊庭
潤 伊庭
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Canon Inc
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Canon Inc
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Priority to JP2016103715A priority Critical patent/JP6800610B2/ja
Priority to US15/596,647 priority patent/US10453878B2/en
Publication of JP2017212303A publication Critical patent/JP2017212303A/ja
Publication of JP2017212303A5 publication Critical patent/JP2017212303A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016103715A 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置 Active JP6800610B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016103715A JP6800610B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置
US15/596,647 US10453878B2 (en) 2016-05-24 2017-05-16 Photoelectric conversion apparatus and image-reading apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016103715A JP6800610B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置

Publications (3)

Publication Number Publication Date
JP2017212303A JP2017212303A (ja) 2017-11-30
JP2017212303A5 JP2017212303A5 (https=) 2019-06-13
JP6800610B2 true JP6800610B2 (ja) 2020-12-16

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JP2016103715A Active JP6800610B2 (ja) 2016-05-24 2016-05-24 光電変換装置及び画像読み取り装置

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JP (1) JP6800610B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7084700B2 (ja) * 2017-06-16 2022-06-15 キヤノン株式会社 光電変換装置およびスキャナ
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6472557A (en) * 1987-09-11 1989-03-17 Seiko Instr & Electronics Image sensor
JP4241527B2 (ja) * 1999-02-25 2009-03-18 キヤノン株式会社 光電変換素子
US6590242B1 (en) * 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
KR100949753B1 (ko) * 2005-08-31 2010-03-25 후지쯔 마이크로일렉트로닉스 가부시키가이샤 포토 다이오드, 고체 촬상 장치, 및 그 제조 방법
JP2011124522A (ja) * 2009-12-14 2011-06-23 Canon Inc 光電変換装置

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US10453878B2 (en) 2019-10-22
US20170345856A1 (en) 2017-11-30
JP2017212303A (ja) 2017-11-30

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