JP6799042B2 - 量子ドット、発光材料および量子ドットの製造方法 - Google Patents
量子ドット、発光材料および量子ドットの製造方法 Download PDFInfo
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- JP6799042B2 JP6799042B2 JP2018198236A JP2018198236A JP6799042B2 JP 6799042 B2 JP6799042 B2 JP 6799042B2 JP 2018198236 A JP2018198236 A JP 2018198236A JP 2018198236 A JP2018198236 A JP 2018198236A JP 6799042 B2 JP6799042 B2 JP 6799042B2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description
Ra nSi(ORb)4−n n=0〜3 式(I);
RaはC6〜C15の芳香族基を示し、RbはC1〜C5のアルキル基を表す。芳香族基は、例えば(これらに限定されない)、フェニル基、トリル基、p−ヒドロキシフェニル、1−(p−ヒドロキシフェニル)エチル、2−(p−ヒドロキシフェニル)エチル、4−ヒドロキシ−5−(p−ヒドロキシフェニルカルボニルオキシ)ペンチル、またはナフチル基である。アルキルは、例えば(これらに限定されない)、メチル基、エチル基、n−プロピル基、イソプロピル基、またはn−ブチル基である。いくつかの実施形態では、ポリシロキサンは、テトラエトキシシラン(TEOS)の加水分解および縮合反応を経て得ることができる。
Rc mSi(ORd)4−m m=1〜3 式(II);
RcはC3〜C20のアルキル基を示し、RdはC1〜C5のアルキル基を示す。いくつかの実施形態では、Rcはオクチル基、ノニル基、またはデシル基である。Rdは、例えば(これらに限定されない)、メチル基、エチル基、n−プロピル基、イソプロピル基、またはn−ブチル基である。
(実験例1)
<量子ドットの調製>
<発光材料の調製>
(実験例2)
(比較例1)
(比較例2)
(比較例3)
(実験例1、実験例2、比較例1、比較例2および比較例3の結果)
Φは、量子収率を示し、Ecは、サンプル溶液の発光積分面積であり、Eaは、n−ヘキサンの発光積分面積であり、Lcは、サンプル溶液の励起積分面積であり、Laは、n−ヘキサンの励起積分面積である。
202、202a:発光ピーク
IA:吸収強度
IE:発光強度
IM:最大強度
S100、S102、S104、S106、S108、S300、S302、S304、S306:ステップ
λc1、λc2:特徴的な波長
Claims (1)
- 量子ドットの製造方法であって、
第12族元素、第13族元素、または第14族元素を含む第1の溶液を準備するステップと;
第15族元素または第16族元素を含む第2の溶液を準備するステップと;
前記第1の溶液を前記第2の溶液と混合して第3の溶液を形成するステップと;
前記第12族元素、前記第13族元素または前記第14族元素を含む材料と、前記第15族元素または前記第16族元素を含む第4の溶液とを前記第3の溶液に添加して、前記量子ドットを含む第5の溶液を形成するステップと;
前記第5の溶液に熱処理を行うステップであって、前記熱処理の温度は、275℃〜295℃であり、前記熱処理の時間は、3分〜7分である、ステップとを含み、
前記熱処理後に、特徴的な波長における前記量子ドットの吸収強度に対する発光強度の比が、1.5×108CPS/Abs.〜2.0×109CPS/Abs.の範囲であり、前記特徴的な波長は、前記熱処理後の前記量子ドットの発光ピークの最大強度の半分に対応する2つの波長のうち、より短い波長であり、
前記第1の溶液は少なくとも第12族元素を含み、前記第12族元素は亜鉛、カドミウム、水銀、またはこれらの組み合わせを含み、前記第2の溶液は少なくとも第16族元素を含み、前記第16族元素は酸素、硫黄、セレンおよびテルルの少なくとも1つを含み、前記量子ドットの粒径は3〜25nmである、製造方法。
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