JP6797273B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6797273B2
JP6797273B2 JP2019236679A JP2019236679A JP6797273B2 JP 6797273 B2 JP6797273 B2 JP 6797273B2 JP 2019236679 A JP2019236679 A JP 2019236679A JP 2019236679 A JP2019236679 A JP 2019236679A JP 6797273 B2 JP6797273 B2 JP 6797273B2
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high frequency
frequency power
power supply
power
plasma processing
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Japanese (ja)
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JP2020126998A (ja
Inventor
紳治 久保田
紳治 久保田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN202010070561.4A priority Critical patent/CN111524782B/zh
Priority to CN202310809321.5A priority patent/CN116844934A/zh
Priority to KR1020200008821A priority patent/KR102280293B1/ko
Priority to US16/752,376 priority patent/US10707054B1/en
Priority to US16/891,886 priority patent/US11205561B2/en
Publication of JP2020126998A publication Critical patent/JP2020126998A/ja
Application granted granted Critical
Publication of JP6797273B2 publication Critical patent/JP6797273B2/ja
Priority to KR1020210093033A priority patent/KR102580453B1/ko
Priority to US17/500,691 priority patent/US11631572B2/en
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2019236679A 2019-02-05 2019-12-26 プラズマ処理装置 Active JP6797273B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN202010070561.4A CN111524782B (zh) 2019-02-05 2020-01-21 等离子体处理装置
CN202310809321.5A CN116844934A (zh) 2019-02-05 2020-01-21 等离子体处理装置
KR1020200008821A KR102280293B1 (ko) 2019-02-05 2020-01-22 플라즈마 처리 장치
US16/752,376 US10707054B1 (en) 2019-02-05 2020-01-24 Plasma processing apparatus
US16/891,886 US11205561B2 (en) 2019-02-05 2020-06-03 Plasma processing apparatus
KR1020210093033A KR102580453B1 (ko) 2019-02-05 2021-07-15 플라즈마 처리 장치
US17/500,691 US11631572B2 (en) 2019-02-05 2021-10-13 Plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019018833 2019-02-05
JP2019018833 2019-02-05

Related Child Applications (1)

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JP2020191041A Division JP7060664B2 (ja) 2019-02-05 2020-11-17 プラズマ処理装置

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JP2020126998A JP2020126998A (ja) 2020-08-20
JP6797273B2 true JP6797273B2 (ja) 2020-12-09

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JP2019236679A Active JP6797273B2 (ja) 2019-02-05 2019-12-26 プラズマ処理装置
JP2020191041A Active JP7060664B2 (ja) 2019-02-05 2020-11-17 プラズマ処理装置
JP2022066927A Active JP7395645B2 (ja) 2019-02-05 2022-04-14 プラズマ処理装置

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JP2022066927A Active JP7395645B2 (ja) 2019-02-05 2022-04-14 プラズマ処理装置

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
CN116803213B (zh) * 2021-02-04 2025-02-14 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP7699444B2 (ja) * 2021-03-09 2025-06-27 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7671717B2 (ja) * 2021-08-10 2025-05-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2024094788A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電源装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144434A (ja) * 1998-11-09 2000-05-26 Sekisui Chem Co Ltd 傾斜機能材料の製造方法
JP2001358129A (ja) * 2000-06-16 2001-12-26 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
JP5542509B2 (ja) * 2010-04-05 2014-07-09 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP6309398B2 (ja) * 2014-08-29 2018-04-11 株式会社ダイヘン 高周波電源
JP6817889B2 (ja) * 2016-05-10 2021-01-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6770868B2 (ja) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 プラズマ処理装置のインピーダンス整合のための方法
US10927449B2 (en) * 2017-01-25 2021-02-23 Applied Materials, Inc. Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment

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JP2020126998A (ja) 2020-08-20
JP7060664B2 (ja) 2022-04-26
JP7395645B2 (ja) 2023-12-11
JP2021036612A (ja) 2021-03-04
JP2022105037A (ja) 2022-07-12

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