JP6792068B2 - パルス光ビームのスペクトルフィーチャの制御 - Google Patents
パルス光ビームのスペクトルフィーチャの制御 Download PDFInfo
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- 230000003595 spectral effect Effects 0.000 title claims description 128
- 230000003287 optical effect Effects 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 29
- 238000000206 photolithography Methods 0.000 claims description 28
- 238000001459 lithography Methods 0.000 claims description 15
- 238000005286 illumination Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 230000002596 correlated effect Effects 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 29
- 238000004458 analytical method Methods 0.000 description 19
- 238000005259 measurement Methods 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000012937 correction Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- QGOSZQZQVQAYFS-UHFFFAOYSA-N krypton difluoride Chemical compound F[Kr]F QGOSZQZQVQAYFS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000699670 Mus sp. Species 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 238000012508 change request Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007659 motor function Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
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- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
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Description
本出願は、2016年10月17日出願の米国特許出願第15/295,280号に関連し、その米国出願は、その全体において参照により本明細書で援用される。
Claims (17)
- 光源によって生成されたパルス光ビームのスペクトルフィーチャを制御する方法であって、
あるパルス繰り返し率でパルス光ビームを前記光源から生成することと、
基板を前記パルス光ビームに露光するために、リソグラフィ露光装置に収容された前記基板の方へ前記パルス光ビームを導くことと、
前記パルス光ビームが前記基板を露光しているときに、前記パルス光ビームのパルス繰り返し率を修正することと、
前記光源用の前記繰り返し率と前記スペクトルフィーチャとの間の関係を定義する相関レシピに基づいて、前記パルス光ビームのスペクトルフィーチャに対する調整量を決定することであって、前記調整量が、前記パルス光ビームの前記パルス繰り返し率の前記修正に相関する前記パルス光ビームの前記スペクトルフィーチャにおける変動を補償することと、
前記パルス光ビームが前記基板を露光しているときに、前記決定された調整量だけ前記パルス光ビームの前記スペクトルフィーチャを変更し、それによって前記スペクトルフィーチャにおける前記変動を補償することと、
前記パルス光ビームのパルスバーストペア間に、前記光源用の前記相関レシピを作成することと、
を含む方法。 - 前記スペクトルフィーチャに対する前記調整量を決定することが、
前記相関レシピにアクセスすることと、
前記レシピにおける前記修正されたパルス繰り返し率に相関する前記スペクトルフィーチャを決定することと、
前記修正されたパルス繰り返し率に相関された前記スペクトルフィーチャを相殺する前記スペクトルフィーチャの前記調整量を計算することと、
を含む、請求項1に記載の方法。 - 前記パルス光ビームの前記スペクトルフィーチャを変更することが、前記光源の1つ又は複数のコンポーネントを調整することを含む、請求項1又は2のいずれかに記載の方法。
- 前記光源の前記1つ又は複数のコンポーネントを調整することが、前記パルス光ビームと相互作用するスペクトルフィーチャ選択装置の1つ又は複数の光学コンポーネントを調整することを含み、前記スペクトルフィーチャ選択装置のプリズムを回転させることを含む、請求項3に記載の方法。
- 前記スペクトルフィーチャ選択装置の前記プリズムを回転させ、それによって前記スペクトルフィーチャを変更することが、50ミリ秒以下の時間で、第1の安定平衡位置から第2の安定平衡位置に前記プリズムを回転させることを含む、請求項4に記載の方法。
- 前記パルス光ビームの前記スペクトルフィーチャを変更することが、前記パルス光ビームのパルスバースト間に前記スペクトルフィーチャを変更することを含む、請求項1乃至5のいずれか1項に記載の方法。
- 前記パルス光ビームが前記基板を露光しているときに、前記パルス光ビームの前記スペクトルフィーチャを前記決定された調整量だけ変更し、それによって前記スペクトルフィーチャ変動を補償することが、前記パルス光ビームの前記スペクトルフィーチャを所定の安定域内に維持させる、請求項1乃至6のいずれか1項に記載の方法。
- 前記スペクトルフィーチャを前記所定の安定域に維持することがまた、前記基板に形成されたフィーチャのクリティカルディメンションを所定の許容範囲内に維持する、請求項7に記載の方法。
- 前記スペクトルフィーチャが、前記パルス光ビームの帯域幅である、請求項1乃至8のいずれか1項に記載の方法。
- システムであって、
パルス光ビームを生成し、それをフォトリソグラフィ露光装置の方へ導く照明システムであって、変更され得るパルス繰り返し率で、前記パルス光ビームを生成する光源を含む照明システムと、
前記パルス光ビームのスペクトルフィーチャを選択するスペクトルフィーチャ選択装置であって、前記パルス光ビームの経路に配置された光学コンポーネントセットを含むスペクトルフィーチャ選択装置と、
前記光源に、且つ前記スペクトルフィーチャ選択装置に動作可能に接続される制御システムであって、
前記パルス光ビームが生成される前記繰り返し率を制御することであって、前記フォトリソグラフィ露光装置において前記パルス光ビームが基板を露光しているときに、前記パルス光ビームの繰り返し率を修正することを含むことと、
前記光源用の前記繰り返し率と前記スペクトルフィーチャとの間の関係を定義する相関レシピに基づいて、前記パルス光ビームのスペクトルフィーチャに対する調整量を決定することであって、前記調整量が、前記パルス光ビームの前記パルス繰り返し率の前記修正に相関する前記パルス光ビームの前記スペクトルフィーチャにおける変動を補償することと、
少なくとも1つの光学コンポーネントを移動させるために、前記スペクトルフィーチャ選択装置に信号を送信し、それによって、前記パルス光ビームが前記基板を露光しているときに、前記パルス光ビームの前記スペクトルフィーチャを前記決定された調整量だけ変更し、それによって前記スペクトルフィーチャ変動を補償することとを行い、且つ
前記パルス光ビームのパルスバーストペア間に、前記光源用の前記相関レシピを作成する制御システムと、
を含むシステム。 - 前記スペクトルフィーチャ選択装置の前記光学コンポーネントセットが、少なくとも1つのプリズムを含み、前記制御システムが、前記プリズムを回転させ、それによって前記スペクトルフィーチャを変更するために、前記少なくとも1つのプリズムに関連する迅速なアクチュエータに信号を送信する、請求項10に記載のシステム。
- 前記スペクトルフィーチャ選択装置の前記光学コンポーネントのセットが、
前記パルス光ビームと相互作用する分散光学素子と、
前記分散光学素子と前記光源との間の前記パルス光ビームの前記経路に配置された複数のプリズムと、
を含む、請求項11に記載のシステム。 - 前記スペクトルフィーチャ選択装置が、プリズムに関連する、且つ前記関連するプリズムを回転させ、それによって前記パルス光ビームのスペクトルフィーチャを調整する少なくとも1つのアクチュエータを含む作動システムを含む、請求項11に記載のシステム。
- 前記迅速なアクチュエータが、回転軸を中心に回転する回転ステージを含み、且つ前記プリズムに機械的に連結される領域を含む、請求項11に記載のシステム。
- 前記回転ステージが、完全な360°の回転角度に沿って、前記回転軸を中心に回転する、請求項14に記載のシステム。
- 前記照明システムが、前記光源から生成された前記パルス光ビームを受信し、且つ前記フォトリソグラフィ露光装置の方へ前記パルス光ビームを導くビーム調製システムを含む、請求項10乃至15のいずれか1項に記載のシステム。
- 前記スペクトルフィーチャが、前記パルス光ビームの帯域幅である、請求項10乃至16のいずれか1項に記載のシステム。
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