JP6789362B2 - 電力増幅器のモジュール、無線周波数通信のデバイス、及び無線周波数信号を増幅する方法 - Google Patents
電力増幅器のモジュール、無線周波数通信のデバイス、及び無線周波数信号を増幅する方法 Download PDFInfo
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- 230000005540 biological transmission Effects 0.000 description 8
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- 230000003111 delayed effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0283—Reducing the number of DC-current paths
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/24—Indexing scheme relating to amplifiers the supply or bias voltage or current at the source side of a FET being continuously controlled by a controlling signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
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- H—ELECTRICITY
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- H03F2200/00—Indexing scheme relating to amplifiers
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
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- H—ELECTRICITY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
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- H—ELECTRICITY
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- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21127—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias current of a power amplifier being controlled, e.g. by an active current source or a current mirror
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Description
Pout=30dBm=1W
Pin=30dBM−30dB=30dBm=1mW
Pdc=3V×(500ma+30mA+30mA)=1.68W
PAE=(Pout−Pin)/Pdc=(1W−1mW)/1.68W=59.5%
Pout=30dBm=1W
Pin=30dBM−30dB=30dBm=1mW
Pdc=3Vx(500ma+30mA)=1.59W
PAE=(Pout−Pin)/Pdc=(1W−1mW)/1.59W=59.5%
Claims (19)
- 無線周波数通信回路用の電力増幅器のモジュールであって、
無線周波数信号を受信する入力部を有するドライバ段増幅器と、
最終段増幅器と、
前記ドライバ段増幅器及び前記最終段増幅器の少なくとも一方に電力を与える包絡線追跡モジュールと
を含み、
前記ドライバ段増幅器は第1トランジスタを含み、
前記最終段増幅器は第2トランジスタを含み、
前記最終段増幅器には、前記第2トランジスタに並列接続されるトランジスタが存在せず、
前記ドライバ段増幅器には、前記無線周波数信号を増幅するべく前記第1トランジスタのコレクタとエミッタとの間に適用される供給電圧が与えられ、
前記最終段増幅器は、増幅された無線周波数信号を前記第1トランジスタのコレクタにおける出力から受信し、
前記最終段増幅器には前記第2トランジスタのコレクタとエミッタとの間に適用される供給電圧が与えられ、
前記最終段増幅器は増幅された出力信号を与え、
前記最終段増幅器の入力部に適用されるバイアス電流が、前記第1トランジスタのエミッタに適用されることにより、前記ドライバ段増幅器を流れる電流が低減されるモジュール。 - 前記包絡線追跡モジュールは前記最終段増幅器に電力を供給する請求項1のモジュール。
- 前記ドライバ段増幅器は固定電源から電力が供給される請求項2のモジュール。
- 前記固定電源は電池を含む請求項3のモジュール。
- 前記包絡線追跡モジュールは前記ドライバ段増幅器及び前記最終段増幅器の双方に電力を供給する請求項2のモジュール。
- 前記第1トランジスタのベースは前記ドライバ段増幅器の入力部を形成し、
前記第1トランジスタのコレクタは、前記ドライバ段増幅器の出力部を形成し、かつ、前記第2トランジスタのベースに接続され、
前記第2トランジスタのベースは前記最終段増幅器の入力部を形成し、
前記第2トランジスタのコレクタは前記最終段増幅器の出力部を形成する請求項1のモジュール。 - 前記第2トランジスタのベースは、電流によってバイアスがかけられかつ前記ドライバ段増幅器のエミッタに電気的に接続される請求項6のモジュール。
- 前記ドライバ段増幅器に電力を供給するべく前記最終段増幅器のベース電流バイアスを再使用することにより、3%電力付加効率の近似的効率改善が得られる請求項1のモジュール。
- 無線周波数通信のデバイスであって、
無線周波数入力部及び無線周波数出力部と、
第1増幅器及び第2増幅器を有する二段電力モジュールと、
前記第1増幅器及び前記第2増幅器の双方に電力を供給する電力供給部と、
前記第1増幅器と前記第2増幅器とを相互接続する相互接続部と
を含み、
前記第1増幅器は第1トランジスタを含み、
前記第2増幅器は第2トランジスタを含み、
前記第2増幅器には、前記第2トランジスタに並列接続されるトランジスタが存在せず、
前記第1トランジスタのベースは前記無線周波数入力部からの無線周波数信号を受信し、
前記第1トランジスタのコレクタにおける出力は前記第2トランジスタのベースに与えられ、
前記第2トランジスタのベースはさらにバイアス信号を受信し、
前記第2トランジスタのコレクタが前記無線周波数出力部へと与えられ、
前記第1増幅器及び前記第2増幅器の少なくとも一方には、包絡線追跡モジュールによる前記無線周波数信号の包絡線追跡に基づいて前記電力供給部により電力が与えられ、
前記相互接続部は、前記バイアス信号が、前記第1増幅器に電力を供給するべく前記第1増幅器に与えられるように、前記第2トランジスタのベースと前記第1トランジスタのエミッタとを相互接続するデバイス。 - 前記包絡線追跡モジュールは前記第2増幅器に電力を供給する請求項9のデバイス。
- 前記第1増幅器は固定電源から電力が供給される請求項10のデバイス。
- 前記固定電源は電池を含む請求項11のデバイス。
- 前記包絡線追跡モジュールは前記第1増幅器及び前記第2増幅器の双方に電力を供給する請求項10のデバイス。
- 前記第2トランジスタのベースは、電流によってバイアスがかけられかつ前記第1増幅器のエミッタに電気的に接続される請求項9のデバイス。
- 送信モード及び受信モード間のスイッチングを行うスイッチングネットワークをさらに含む請求項9のデバイス。
- 前記包絡線追跡モジュール及び前記スイッチングネットワークを制御するプロセッサ及びコンピュータ可読媒体をさらに含む請求項15のデバイス。
- 無線周波数信号を増幅する方法であって、
第1トランジスタを有する第1増幅器において第1信号を増幅することと、
前記第1トランジスタのコレクタの出力を、第2のトランジスタを有する第2増幅器に与えることと、
前記第1増幅器及び前記第2増幅器に電力を供給することと、
前記第2のトランジスタのベースに対してバイアス信号によってバイアスをかけることと、
前記第2増幅器に適用された前記バイアス信号の少なくとも一部を、前記第1トランジスタのエミッタに電力を供給するべく前記第1増幅器に与えることと
を含み、
前記第2増幅器には、前記第2のトランジスタに並列接続されるトランジスタが存在しない方法。 - 前記第1増幅器及び前記第2増幅器に電力を供給することは、
前記第1信号の包絡線を検出することと、
前記第1信号の包絡線の少なくとも一部に基づいて前記第1増幅器及び前記第2増幅器の少なくとも一方に可変電力を供給することと
を含む請求項17の方法。 - 前記第1増幅器及び前記第2増幅器の少なくとも一方に可変電力を供給することは、
前記第2増幅器に可変電力を供給することと、
前記第1増幅器に固定電力を供給することと
を含む請求項18の方法。
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JP7199852B2 (ja) * | 2018-07-02 | 2023-01-06 | キヤノンメディカルシステムズ株式会社 | 高周波電源及び磁気共鳴イメージング装置 |
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US9991850B2 (en) | 2018-06-05 |
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US20170207752A1 (en) | 2017-07-20 |
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US9602056B2 (en) | 2017-03-21 |
CN105450180B (zh) | 2019-11-19 |
EP2999114A1 (en) | 2016-03-23 |
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TWI662786B (zh) | 2019-06-11 |
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