JP6753654B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP6753654B2
JP6753654B2 JP2015140102A JP2015140102A JP6753654B2 JP 6753654 B2 JP6753654 B2 JP 6753654B2 JP 2015140102 A JP2015140102 A JP 2015140102A JP 2015140102 A JP2015140102 A JP 2015140102A JP 6753654 B2 JP6753654 B2 JP 6753654B2
Authority
JP
Japan
Prior art keywords
sample table
plasma processing
base
processing apparatus
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015140102A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017022295A (ja
JP2017022295A5 (enExample
Inventor
信太郎 中谷
信太郎 中谷
北田　裕穂
裕穂 北田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2015140102A priority Critical patent/JP6753654B2/ja
Publication of JP2017022295A publication Critical patent/JP2017022295A/ja
Publication of JP2017022295A5 publication Critical patent/JP2017022295A5/ja
Application granted granted Critical
Publication of JP6753654B2 publication Critical patent/JP6753654B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2015140102A 2015-07-14 2015-07-14 プラズマ処理装置 Active JP6753654B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015140102A JP6753654B2 (ja) 2015-07-14 2015-07-14 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015140102A JP6753654B2 (ja) 2015-07-14 2015-07-14 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2017022295A JP2017022295A (ja) 2017-01-26
JP2017022295A5 JP2017022295A5 (enExample) 2018-08-16
JP6753654B2 true JP6753654B2 (ja) 2020-09-09

Family

ID=57888687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015140102A Active JP6753654B2 (ja) 2015-07-14 2015-07-14 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JP6753654B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7278175B2 (ja) * 2019-08-23 2023-05-19 東京エレクトロン株式会社 基板処理装置、基板処理装置の製造方法及びメンテナンス方法
KR102855389B1 (ko) * 2020-12-07 2025-09-04 주식회사 원익아이피에스 히터조립체 및 이를 구비하는 기판처리장치
CN114107956B (zh) * 2021-11-26 2025-07-25 中国科学院金属研究所 一种可变尺寸的高功率微波等离子体化学气相沉积设备偏压样品台
WO2025033180A1 (ja) * 2023-08-07 2025-02-13 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009149964A (ja) * 2007-12-22 2009-07-09 Tokyo Electron Ltd 載置台構造及び熱処理装置
JP2011054838A (ja) * 2009-09-03 2011-03-17 Tokyo Electron Ltd 載置台構造及び処理装置
JP5835722B2 (ja) * 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置

Also Published As

Publication number Publication date
JP2017022295A (ja) 2017-01-26

Similar Documents

Publication Publication Date Title
JP6442296B2 (ja) 載置台及びプラズマ処理装置
US9607868B2 (en) Substrate heat treatment apparatus
US11289356B2 (en) Stage and plasma processing apparatus
JP5395633B2 (ja) 基板処理装置の基板載置台
JP6452449B2 (ja) 載置台及び基板処理装置
JP4997842B2 (ja) 処理装置
JP5320171B2 (ja) 基板処理装置
JP6753654B2 (ja) プラズマ処理装置
WO2017101738A1 (zh) 静电卡盘机构以及半导体加工设备
US9812297B2 (en) Method of affixing heat transfer sheet
KR101744847B1 (ko) 플라즈마 처리 장치
CN110352482A (zh) 基板载置台及其电浆处理装置以及电浆处理方法
US11705346B2 (en) Substrate processing apparatus
JP5325457B2 (ja) プラズマ処理装置
JP2010010231A (ja) プラズマ処理装置
JP2021163831A (ja) 保持装置、及びプラズマ処理装置
TWI742431B (zh) 真空處理裝置
JP5696183B2 (ja) プラズマ処理装置
US12392026B2 (en) Method and device for substrate processing
JP6235293B2 (ja) プラズマ処理装置
JP2022053960A (ja) 処理装置及び処理装置における基体保持方法
JP2008147420A (ja) 基板処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180705

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180705

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190328

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190402

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190527

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191029

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200421

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200610

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200721

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200820

R150 Certificate of patent or registration of utility model

Ref document number: 6753654

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150