JP6748688B2 - Photoelectric conversion device - Google Patents

Description

The present invention relates to a photoelectric conversion device.

In recent years, solar cells, which directly convert sunlight energy into electric energy, have been rapidly expected to be used as a next-generation energy source from the viewpoint of global environmental problems. There are various types of solar cells, such as those using compound semiconductors or organic materials, but the ones that are currently the mainstream are those using silicon crystals.

Currently, the most manufactured and sold solar cells have a structure in which electrodes are formed on a light receiving surface that is a surface on which sunlight is incident and a back surface that is an opposite side to the light receiving surface.

However, when an electrode is formed on the light receiving surface, sunlight is reflected and absorbed by the electrode, so that the amount of incident sunlight decreases by the area of the electrode. Therefore, development of a solar cell in which an electrode is formed only on the back surface is underway (see, for example, Patent Document 1).

FIG. 19 shows a schematic cross-sectional view of the solar cell with a wiring sheet described in Patent Document 1. The conventional solar cell with a wiring sheet shown in FIG. 19 includes a back electrode type solar cell 100, a wiring sheet 200, and an insulating resin 300 between the back electrode type solar cell 100 and the wiring sheet 200. doing.

The back electrode type solar cell 100 includes a substrate 101 made of polycrystalline silicon or single crystal silicon having either n-type or p-type conductivity, and an n-type impurity diffusion region 102 provided on the back surface of the substrate 101. And a p-type impurity diffusion region 103, an n-type silver electrode 111 provided on the n-type impurity diffusion region 102, and a p-type silver electrode 112 provided on the p-type impurity diffusion region 103. There is.

The n-type impurity diffusion region 102 is formed by a method such as vapor-phase diffusion using a gas containing an n-type impurity or coating diffusion in which a paste containing an n-type impurity is applied and then heat-treated (see paragraph [0076] of Patent Document 1. ]). Further, the p-type impurity diffusion region 103 is formed by a method such as vapor-phase diffusion using a gas containing a p-type impurity or coating diffusion in which a paste containing a p-type impurity is applied and then heat treated (Patent Document 1 paragraph). [0076]).

The wiring sheet 200 has an insulating base material 201, an n-type copper wiring 202 and a p-type copper wiring 203 provided on the insulating base material 201. As the insulating base material 201, for example, polyester, polyethylene naphthalate, polyimide, or the like is used (paragraph [0090] of Patent Document 1). An epoxy resin, an acrylic resin, or a mixed resin of an epoxy resin and an acrylic resin is used as the insulating resin 300 (paragraph [0098] of Patent Document 1).

In the conventional solar cell with a wiring sheet shown in FIG. 19, an end of the n-type silver electrode 111 in the width W5 direction and an end of the p-type silver electrode 112 in the width W6 direction are respectively n-type copper wirings 202. Of the p-type copper wiring 203 and the end of the p-type copper wiring 203 in the width W8 direction so that the electric field strength applied to the surfaces of the n-type silver electrode 111 and the p-type silver electrode 112 is sharp. It is said that the increase can be suppressed and the deterioration of the characteristics due to ion migration can be stably suppressed (paragraph [0061] of Patent Document 1).

International Publication No. 2012/002270

However, when the structure of the conventional solar cell with a wiring sheet shown in FIG. 19 is applied to a photoelectric conversion device in which a heterojunction type back contact cell is electrically connected to the wiring sheet, the characteristics of the photoelectric conversion device are There was a technical problem of decreasing.

The embodiment disclosed herein includes a heterojunction back contact cell and a wiring sheet electrically connected to the heterojunction back contact cell, wherein the heterojunction back contact cell has a first conductivity type or On the second conductivity type semiconductor substrate, the first conductivity type amorphous semiconductor film and the second conductivity type amorphous semiconductor film provided on one side of the semiconductor substrate, and on the first conductivity type amorphous semiconductor film And a second electrode on the second conductivity type amorphous semiconductor film, and the wiring sheet includes an insulating base material, and the first wiring and the second wiring on the insulating base material. The first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the second wiring, and the width of the first electrode is equal to or larger than the width of the first wiring, and The photoelectric conversion device satisfies at least one of the relationship that the width of the second electrode is equal to or larger than the width of the second wiring.

According to the embodiments disclosed herein, it is possible to improve the characteristics of the photoelectric conversion device in which the heterojunction type back contact cell is electrically connected to the wiring sheet.

3 is a schematic cross-sectional view of the photoelectric conversion device of Embodiment 1. FIG. It is a typical top view of the back of a heterojunction type back contact cell. It is a schematic plan view of a wiring sheet. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion device according to the first embodiment. 3 is a schematic plan view of the photoelectric conversion device of Embodiment 1. FIG. 5 is a schematic cross-sectional view of the photoelectric conversion device of Embodiment 2. FIG. 7 is a schematic cross-sectional view of the photoelectric conversion device of Embodiment 3. FIG. (A) is a schematic sectional drawing which illustrates a part of manufacturing process of the photoelectric conversion device of Embodiment 4, and (b) is a schematic sectional view of the photoelectric conversion device of Embodiment 4. FIG. 6 is a schematic cross-sectional view of a solar cell with a wiring sheet described in Patent Document 1.

Hereinafter, embodiments will be described. In the drawings used for describing the embodiments, the same reference numerals represent the same or corresponding parts.

[Embodiment 1]
<Structure of photoelectric conversion device>
FIG. 1 shows a schematic cross-sectional view of the photoelectric conversion device according to the first embodiment. The photoelectric conversion device according to the first embodiment includes a heterojunction type back contact cell 10 and a wiring sheet 20 electrically connected to the heterojunction type back contact cell 10.

<Heterojunction type back contact cell>
The heterojunction type back contact cell 10 is provided in contact with the back surface of the semiconductor substrate 1 so as to be adjacent to the semiconductor substrate 1 which is an n-type single crystal silicon substrate and on the front surface (back surface) on one side of the semiconductor substrate 1. The first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 are provided. In the first embodiment, each of the first i-type amorphous semiconductor film 2 and the second i-type amorphous semiconductor film 4 is an i-type amorphous silicon film.

A first conductivity type amorphous semiconductor film 3 in contact with the first i-type amorphous semiconductor film 2 is provided on the first i-type amorphous semiconductor film 2. A second conductivity type amorphous semiconductor film 5 is provided on the second i-type amorphous semiconductor film 4 so as to be in contact with the second i-type amorphous semiconductor film 4. In the first embodiment, the first conductivity type amorphous semiconductor film 3 is a p-type amorphous silicon film, and the second conductivity type amorphous semiconductor film 5 is an n-type amorphous silicon film.

A first electrode 11 that is in contact with the first conductivity type amorphous semiconductor film 3 is provided on the first conductivity type amorphous semiconductor film 3. A second electrode 12 that is in contact with the second conductivity type amorphous semiconductor film 5 is provided on the second conductivity type amorphous semiconductor film 5.

Then, both ends of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 are respectively connected to the first i-type amorphous semiconductor film 2 and the first conductive film. The end portion of the laminated body with the amorphous semiconductor film 3 is covered. Therefore, the end of the second i-type amorphous semiconductor film 4 is located between the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5, and Both ends of the i-type amorphous semiconductor film 4 are in contact with both the first conductive type amorphous semiconductor film 3 and the second conductive type amorphous semiconductor film 5, respectively. As a result, the first conductivity type amorphous semiconductor film 3 and the second conductivity type amorphous semiconductor film 5 are separated by the second i-type amorphous semiconductor film 4.

FIG. 2 shows a schematic plan view of the back surface of the heterojunction type back contact cell 10. As shown in FIG. 2, on the back surface of the semiconductor substrate 1 of the heterojunction type back contact cell 10, a strip-shaped first electrode 11 and a strip-shaped second electrode 12 are provided with a space therebetween. The second electrodes 12 are arranged alternately so that their longitudinal directions are the same. In the first embodiment, the width of the first electrode 11 (the length in the direction orthogonal to the longitudinal direction of the first electrode 11) is W1, and the width of the second electrode 12 (the direction orthogonal to the longitudinal direction of the second electrode 12). The length) is W2.

<Wiring sheet>
FIG. 3 shows a schematic plan view of the wiring sheet 20. The wiring sheet 20 includes an insulating base material 21, first wirings 22 and second wirings 23 on the insulating base material 21. The first wirings 22 and the second wirings 23 are also formed in strips, respectively, and are spaced apart from each other on the insulating base material 21 so that the longitudinal directions of these wirings are the same, and are alternately arranged. It is arranged. Further, one ends of the plurality of first wirings 22 and one ends of the plurality of second wirings 23 are electrically connected to the band-shaped current collecting wirings 24, respectively. The current collecting wiring 24 is arranged on the insulating base material 21 so as to have a longitudinal direction in a direction orthogonal to the longitudinal directions of the first wiring 22 and the second wiring 23. The current collection wiring 24 has a function of collecting current from the plurality of first wirings 22 or the plurality of second wirings 23.

As the insulating base material 21, an insulating base material can be used, and for example, a film of polyester, polyethylene naphthalate or polyimide can be used.

A conductive material can be used for the first wiring 22, the second wiring 23, and the current collecting wiring 24. For example, copper or the like can be used. Each of the first wiring 22, the second wiring 23, and the current collecting wiring 24 is formed by, for example, forming a conductive film such as a metal film on the entire surface of the insulating base material 21 and then partially etching the conductive film. Can be formed by removing and patterning.

In the first embodiment, the width of the first wiring 22 (the length in the direction orthogonal to the longitudinal direction of the first wiring 22) is W3, and the width of the second wiring 23 (the direction orthogonal to the longitudinal direction of the second wiring 23). The length) is W4.

<Method for manufacturing photoelectric conversion device>
Hereinafter, an example of a method for manufacturing the photoelectric conversion device according to the first embodiment will be described with reference to the schematic cross-sectional views of FIGS. First, as shown in FIG. 4, the first i-type amorphous semiconductor film 2 is formed on the entire back surface of the semiconductor substrate 1. The method for forming the first i-type amorphous semiconductor film 2 is not particularly limited, but for example, a plasma CVD (Chemical Vapor Deposition) method can be used.

As the semiconductor substrate 1, an n-type single crystal silicon substrate can be preferably used, but it is not limited to the n-type single crystal silicon substrate, and for example, a conventionally known n-type semiconductor substrate can be appropriately used.

An i-type amorphous silicon film can be preferably used as the first i-type amorphous semiconductor film 2, but the first i-type amorphous semiconductor film 2 is not limited to the i-type amorphous silicon film. A high quality semiconductor film can also be used.

Note that in this specification, "i-type" means not only a completely genuine state but also a sufficiently low concentration (n-type impurity concentration is less than 1×10 ¹⁵ pieces/cm ³ and p-type impurity concentration is 1×). (Less than 10 ¹⁵ pieces/cm ³ ), it is meant to include a state in which n-type or p-type impurities are mixed.

Further, in the present specification, “amorphous silicon” includes not only amorphous silicon in which dangling bonds of silicon atoms are not terminated with hydrogen, but also silicon such as hydrogenated amorphous silicon. Those in which dangling bonds of atoms are terminated by hydrogen are also included.

Next, as shown in FIG. 5, a first conductivity type amorphous semiconductor film 3 is formed on the first i-type amorphous semiconductor film 2. The method for forming the first conductivity type amorphous semiconductor film 3 is not particularly limited, but a plasma CVD method can be used, for example.

A p-type amorphous silicon film can be preferably used as the first conductivity type amorphous semiconductor film 3, but the first conductivity type amorphous semiconductor film 3 is not limited to the p-type amorphous silicon film. A semiconductor film can also be used.

As the p-type impurity contained in the first conductivity type amorphous semiconductor film 3, for example, boron can be used. Further, in the present specification, “p-type” means a state in which the p-type impurity concentration is 1×10 ¹⁵ /cm ³ or more.

Next, as shown in FIG. 6, a stacked body of the first i-type amorphous semiconductor film 2 and the first conductivity-type amorphous semiconductor film 3 is formed on the first conductivity-type amorphous semiconductor film 3. An etching mask 31 such as a photoresist having an opening is formed in a portion to be etched in the thickness direction.

Next, as shown in FIG. 7, with the etching mask 31 used as a mask, a part of the stacked body of the first i-type amorphous semiconductor film 2 and the first conductivity type amorphous semiconductor film 3 is formed in the thickness direction. To etch. Thereby, a part of the back surface of the semiconductor substrate 1 is exposed. After that, as shown in FIG. 8, the etching mask 31 is entirely removed.

Next, as shown in FIG. 9, the second i-type is formed so as to cover the semiconductor substrate 1 and the stacked body of the first i-type amorphous semiconductor film 2 and the first conductivity type amorphous semiconductor film 3. The amorphous semiconductor film 4 is formed. The method for forming the second i-type amorphous semiconductor film 4 is not particularly limited, but a plasma CVD method can be used, for example.

An i-type amorphous silicon film can be preferably used as the second i-type amorphous semiconductor film 4, but the second i-type amorphous semiconductor film 4 is not limited to the i-type amorphous silicon film. A high quality semiconductor film can also be used.

Next, as shown in FIG. 10, the second conductivity type amorphous semiconductor film 5 is formed on the second i-type amorphous semiconductor film 4. The method of forming the second conductivity type amorphous semiconductor film 5 is not particularly limited, but a plasma CVD method can be used, for example.

An n-type amorphous silicon film can be preferably used as the second conductivity type amorphous semiconductor film 5, but the second conductivity type amorphous semiconductor film 5 is not limited to the n-type amorphous silicon film. A semiconductor film can also be used.

As the n-type impurity contained in the n-type amorphous silicon film forming the second conductivity type amorphous semiconductor film 5, for example, phosphorus can be used. Further, in the present specification, “n-type” means a state where the n-type impurity concentration is 1×10 ¹⁵ /cm ³ or more.

Next, as shown in FIG. 11, photoresist is applied only to the portion of the back surface of the semiconductor substrate 1 where the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is left. Etching mask 32 is formed.

Next, by using the etching mask 32 as a mask, a part of the stacked body of the second i-type amorphous semiconductor film 4 and the second conductive type amorphous semiconductor film 5 is wet-etched in the thickness direction, As shown in FIG. 12, a part of the first conductivity type amorphous semiconductor film 3 is exposed. After that, the etching mask 32 is completely removed.

Next, as shown in FIG. 13, the first electrode 11 is formed so as to be in contact with the first conductivity type amorphous semiconductor film 3, and the second electrode 12 is formed so as to be contact with the second conductivity type amorphous semiconductor film 5. To form. The method for forming the first electrode 11 and the second electrode 12 is also not particularly limited, but, for example, a vapor deposition method or the like can be used. As described above, the heterojunction type back contact cell 10 is completed.

Next, after applying an insulating adhesive (not shown) on the surface of the wiring sheet 20, as shown in FIG. 14, the heterojunction type back contact cell 10 and the wiring sheet 20 are superposed. At this time, the first electrode 11 of the heterojunction type back contact cell 10 is in direct contact with the first wiring 22 of the wiring sheet 20, and the second electrode 12 of the heterojunction type back contact cell 10 is the second wiring 23 of the wiring sheet 20. The heterojunction type back contact cell 10 and the wiring sheet 20 are superposed so as to be in direct contact with. As a result, the first electrode 11 and the first wiring 22 are electrically connected, and the second electrode 12 and the second wiring 23 are electrically connected. The heterojunction type back contact cell 10 and the wiring sheet 20 are fixed by curing an insulating adhesive and are mechanically connected.

FIG. 15 is a schematic plan view of the photoelectric conversion device according to the first embodiment as viewed from the light receiving surface side. Here, a plurality of heterojunction type back contact cells 10 are installed on the wiring sheet 20, but the number of the heterojunction type back contact cells 10 installed on the wiring sheet 20 is not particularly limited, and for example, one. May be

<Effect>
As shown in FIG. 1, in the photoelectric conversion device of the first embodiment, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1≧W3, and The width W2 and the width W4 of the second wiring 23 satisfy the relationship of W2≧W4. This is what the present inventor has found as a result of extensive studies on improving the characteristics of the photoelectric conversion device in which the heterojunction type back contact cell 10 is electrically connected to the wiring sheet 20.

That is, in the related art, as described above, as in the conventional solar cell with a wiring sheet shown in FIG. 19, the end in the width direction of the electrode is prevented from protruding from the end in the width direction of the wiring, and The rapid increase in the electric field strength is suppressed, and the deterioration of the characteristics caused by the ion migration is stably suppressed.

However, in the photoelectric conversion device of the first embodiment, the current generated by the incidence of light on the heterojunction back contact cell 10 is taken out from the first wiring 22 and the second wiring 23 of the wiring sheet 20 to the outside. At this time, in order to improve the characteristics of the photoelectric conversion device of the first embodiment, it is preferable to connect a plurality of heterojunction type back contact cells 10 in series by the wiring sheet 20, but the width W3 of the first wiring 22 and the When there is a large difference from the width W4 of the two wirings 23, the current amount of the entire photoelectric conversion device is a smaller current amount taken out from the wiring of the narrow width.

Therefore, from the viewpoint of increasing the current amount of the entire photoelectric conversion device, it is preferable that there is no large difference between the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20. The width W3 of the first wiring 22 and the width W4 of the second wiring 23 are each specified to be a predetermined width according to the size of the area of the surface of the insulating base material 21.

In such a situation, in the photoelectric conversion device of the first embodiment, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1≧W3, and the width W2 of the second electrode 12 is the same. The width W4 of the second wiring 23 is configured to satisfy the relationship of W2≧W4. Therefore, no matter how wide the width W3 of the first wiring 22 and the width W4 of the second wiring 23 of the wiring sheet 20 are, the width of the electrode becomes wider than the width of the wiring, and A sufficient contact area with the wiring can be secured. Thereby, in the first embodiment, the characteristics of the photoelectric conversion device in which the heterojunction type back contact cell 10 is electrically connected to the wiring sheet 20 can be improved. From the viewpoint of further improving the characteristics of the photoelectric conversion device, it is preferable that either one of W1>W3 and W2>W4 is satisfied, and both of W1>W3 and W2>W4 are satisfied. Is more preferable.

In particular, as shown in FIG. 1, when both end portions 11a of the first electrode 11 in the width W1 direction extend from the end portions 22a of the first wiring 22 in the width W3 direction, respectively, the first electrode 11 and the first electrode 11 Since a wider contact area with the wiring 22 can be secured, the characteristics of the photoelectric conversion device tend to be further improved.

In addition, even when both ends 12a of the second electrode 12 in the width W2 direction are respectively protruded from the end 23a of the second wiring 23 in the width W4 direction, the twisting between the second electrode 12 and the second wiring 23 is increased. Since a wide contact area can be secured, the characteristics of the photoelectric conversion device tend to be further improved.

Further, even when the entire surface of the first wiring 22 is electrically connected to the first electrode 11, it is possible to secure a wider contact area between the first electrode 11 and the first wiring 22, The characteristics of the photoelectric conversion device tend to be further improved.

Further, even when the entire surface of the second wiring 23 is electrically connected to the second electrode 12, a wider contact area between the second electrode 12 and the second wiring 23 can be secured, The characteristics of the photoelectric conversion device tend to be further improved.

[Embodiment 2]
FIG. 16 shows a schematic cross-sectional view of the photoelectric conversion device of the second embodiment. In the photoelectric conversion device of the second embodiment, the first electrode 11 and the first wiring 22 are electrically connected via the conductive adhesive material 41, and the second electrode 12 and the second wiring 23 are conductive. It is characterized in that they are electrically connected via an adhesive material 41.

The conductive adhesive 41 has conductivity and can be made of a material that can bond the electrode and the wiring, for example, solder or the like can be used.

The description of the second embodiment other than the above is the same as that of the first embodiment, and thus the description thereof will not be repeated.

[Third Embodiment]
FIG. 17 shows a schematic cross-sectional view of the photoelectric conversion device according to the third embodiment. In the photoelectric conversion device of the third embodiment, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 satisfy the relationship of W1≧W3, but the width W2 of the second electrode 12 and the width of the second wiring 23 are The width W4 is characterized by not satisfying the relationship of W2≧W4.

Even in this case, since a sufficient contact area between the first electrode 11 and the first wiring 22 can be secured, the photoelectric conversion device in which the heterojunction type back contact cell 10 is electrically connected to the wiring sheet 20. The characteristics of can be improved.

The description of Embodiment 3 other than the above is the same as that of Embodiments 1 and 2, and therefore the description thereof will not be repeated.

[Embodiment 4]
18A is a schematic cross-sectional view illustrating a part of the manufacturing process of the photoelectric conversion device of the fourth embodiment, and FIG. 18B is a schematic cross-sectional view of the photoelectric conversion device of the fourth embodiment. Show.

The photoelectric conversion device according to the fourth embodiment uses the above-described insulating adhesive and conductive adhesive 41 for joining the first electrode 11 and the first wiring 22 and joining the second electrode 12 and the second wiring 23. Instead, after the heterojunction type back contact cell 10 and the wiring sheet 20 are aligned, the heterojunction type back contact cell 10 and the wiring sheet 20 are adhered to each other by vacuum lamination as shown in FIG. 18(a), for example. The first electrode 11 and the first wiring 22 are electrically connected to each other, and the second electrode 12 and the second wiring 23 are electrically connected to each other. Thereby, similarly to the photoelectric conversion device of the first embodiment, the width W1 of the first electrode 11 and the width W3 of the first wiring 22 shown in FIG. 18B satisfy the relationship of W1≧W3, and the second electrode The photoelectric conversion device according to the fourth embodiment can be obtained in which the width W2 of 12 and the width W4 of the second wiring 23 satisfy the relationship of W2≧W4.

The description of Embodiment 4 other than the above is the same as that of Embodiments 1 to 3, and therefore the description thereof will not be repeated.

[Appendix]
(1) The embodiment disclosed herein includes a heterojunction type back contact cell and a wiring sheet electrically connected to the heterojunction type back contact cell, and the heterojunction type back contact cell is the first A semiconductor substrate of conductivity type or second conductivity type, a first conductivity type amorphous semiconductor film provided on one side of the semiconductor substrate, a second conductivity type amorphous semiconductor film, and a first conductivity type amorphous A first electrode on the high quality semiconductor film and a second electrode on the second conductivity type amorphous semiconductor film, and the wiring sheet includes an insulating base material, first wiring on the insulating base material, and Two wirings, the first electrode is electrically connected to the first wiring, the second electrode is electrically connected to the second wiring, and the width of the first electrode is not less than the width of the first wiring. And the width of the second electrode is equal to or more than the width of the second wiring, the photoelectric conversion device is satisfied. In the photoelectric conversion device of the embodiment, at least one of the relationship that the width of the first electrode is not less than the width of the first wiring and the width of the second electrode is not less than the width of the second wiring is satisfied. Therefore, a sufficient contact area between the electrode and the wiring can be secured, and the characteristics of the photoelectric conversion device can be improved.

(2) In the embodiment disclosed herein, each of the first wiring and the second wiring is preferably strip-shaped. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(3) In the embodiment disclosed herein, each of the first electrode and the second electrode is preferably band-shaped. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(4) In the embodiment disclosed herein, it is preferable that both ends of the first electrode in the width direction protrude from the ends of the first wiring in the width direction. In this case, a wider contact area between the first electrode and the first wiring can be secured, so that the characteristics of the photoelectric conversion device tend to be further improved.

(5) In the embodiment disclosed herein, it is preferable that both ends of the second electrode in the width direction protrude from the ends of the second wiring in the width direction. In this case, a wider contact area between the second electrode and the second wiring can be secured, so that the characteristics of the photoelectric conversion device tend to be further improved.

(6) In the embodiment disclosed herein, it is preferable that the entire surface of the first wiring is electrically connected to the first electrode. Also in this case, a wider contact area between the first electrode and the first wiring can be ensured, so that the characteristics of the photoelectric conversion device tend to be further improved.

(7) In the embodiment disclosed herein, it is preferable that the entire surface of the second wiring is electrically connected to the second electrode. Also in this case, a wider contact area between the second electrode and the second wiring can be secured, so that the characteristics of the photoelectric conversion device tend to be further improved.

(8) In the embodiment disclosed herein, the electrical connection between the first electrode and the first wiring is performed by direct contact between the first electrode and the first wiring, and between the first electrode and the first wiring. It is preferable to use at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(9) In the embodiment disclosed herein, the electrical connection between the second electrode and the second wiring is performed by direct contact between the second electrode and the second wiring, and between the second electrode and the second wiring. It is preferable to use at least one of the conductive adhesives. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(10) In the embodiment disclosed herein, the semiconductor substrate preferably contains n-type crystalline silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(11) In the embodiment disclosed herein, the first i-type amorphous semiconductor film between the semiconductor substrate and the first conductivity type amorphous semiconductor film, the semiconductor substrate and the second conductivity type amorphous film. It is preferable to further include a second i-type amorphous semiconductor film between the semiconductor film and the second i-type amorphous semiconductor film. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(12) In the embodiment disclosed herein, the first i-type amorphous semiconductor film preferably contains i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(13) In the embodiment disclosed herein, the second i-type amorphous semiconductor film preferably contains i-type amorphous silicon. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(14) In the embodiment disclosed herein, it is preferable that the semiconductor substrate and the first i-type amorphous semiconductor film are in contact with each other.

(15) In the embodiment disclosed herein, it is preferable that the semiconductor substrate and the second i-type amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(16) In the embodiment disclosed herein, it is preferable that the first i-type amorphous semiconductor film and the first conductivity type amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(17) In the embodiment disclosed herein, it is preferable that the second i-type amorphous semiconductor film and the second conductivity type amorphous semiconductor film are in contact with each other. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(18) In the embodiment disclosed herein, the end portion of the second i-type amorphous semiconductor film is located between the first conductive type amorphous semiconductor film and the second conductive type amorphous semiconductor film. Preferably. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(19) In the embodiment disclosed herein, the end of the second i-type amorphous semiconductor film is in contact with each of the first-conductivity-type amorphous semiconductor film and the second-conductivity-type amorphous semiconductor film. Preferably. Also in this case, the characteristics of the photoelectric conversion device can be improved.

(20) In the embodiment disclosed herein, a step of preparing a heterojunction type back contact cell having a first electrode and a second electrode, and a step of preparing a wiring sheet having a first wiring and a second wiring. Electrically connecting the first electrode of the heterojunction type back contact cell and the first wiring of the wiring sheet, and electrically connecting the second electrode of the heterojunction type back contact cell and the second wiring of the wiring sheet. The heterojunction type back contact cell includes a semiconductor substrate of the first conductivity type or the second conductivity type, and a first conductivity type amorphous semiconductor provided on one side of the semiconductor substrate. The film, the second conductive type amorphous semiconductor film, and the first electrode are provided on the first conductive type amorphous semiconductor film, and the second electrode is provided on the second conductive type amorphous semiconductor film. The wiring sheet includes an insulating base material, the first wiring and the second wiring are provided on the insulating base material, and the width of the first electrode is equal to or larger than the width of the first wiring, And the width of the second electrode is equal to or larger than the width of the second wiring. In the method for manufacturing the photoelectric conversion device of the embodiment, at least one of the relationship that the width of the first electrode is not less than the width of the first wiring and the width of the second electrode is not less than the width of the second wiring is satisfied. Therefore, a sufficient contact area between the electrode and the wiring can be secured, and a photoelectric conversion device with improved characteristics can be manufactured.

(21) In the embodiment disclosed herein, the step of manufacturing the heterojunction type back contact cell is performed by forming the first conductivity type amorphous semiconductor film on one side of the semiconductor substrate of the first conductivity type or the second conductivity type. A step of forming a part of the semiconductor substrate by removing a part of the first conductivity type amorphous semiconductor film in the thickness direction, a semiconductor substrate and a first conductivity type amorphous semiconductor film Forming a second conductive type amorphous semiconductor film thereon, forming a first electrode on the first conductive type amorphous semiconductor film, and forming a second electrode on the second conductive type amorphous semiconductor film. And a step of forming an electrode. Also in this case, a photoelectric conversion device having improved characteristics can be manufactured.

(22) In the embodiment disclosed herein, the step of forming the first conductivity type amorphous semiconductor film includes the step of forming the first i-type amorphous semiconductor film on one side of the semiconductor substrate, A step of forming a first conductive type amorphous semiconductor film on the first i-type amorphous semiconductor film, and a step of forming the second conductive type amorphous semiconductor film includes: Forming a second i-type amorphous semiconductor film on the second i-type amorphous semiconductor film, and forming a second conductive type amorphous semiconductor film on the second i-type amorphous semiconductor film It is preferable to include. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.

(23) In the embodiment disclosed herein, electrical connection between the first electrode and the first wiring is performed by direct contact between the first electrode and the first wiring, and between the first electrode and the first wiring. It is preferable that the bonding is performed by at least one of bonding with a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.

(24) In the embodiment disclosed herein, electrical connection between the second electrode and the second wiring is performed by direct contact between the second electrode and the second wiring, and between the second electrode and the second wiring. It is preferable that the bonding is performed by at least one of bonding with a conductive adhesive. Also in this case, a photoelectric conversion device with improved characteristics can be manufactured.

Although the embodiments of the present invention have been described above, it is also planned from the beginning to appropriately combine the configurations of the above-described embodiments.

The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description but by the claims, and is intended to include meanings equivalent to the claims and all modifications within the scope.

The photoelectric conversion device and the method for manufacturing the photoelectric conversion device according to the embodiments disclosed herein are preferably used for a photoelectric conversion module in which heterojunction back contact cells are electrically connected by a wiring sheet and a method for manufacturing the photoelectric conversion module. be able to.

1 semiconductor substrate, 2 1st i-type amorphous semiconductor film, 3 1st conductivity type amorphous semiconductor film, 4 2nd i-type amorphous semiconductor film, 5 2nd conductivity type amorphous semiconductor film, 10 heterojunction type back contact cell, 11 first electrode, 11a end portion, 12 second electrode, 12a end portion, 20 wiring sheet, 21 insulating base material, 22 first wiring, 22a end portion, 23 second wiring, 23a edge part, 24 current collection wiring, 31, 32 etching mask, 100 back electrode type solar cell, 101 substrate, 102 n type impurity diffusion region, 103 p type impurity diffusion region, 111 n type silver electrode, 112 p Mold silver electrode, 200 wiring sheet, 201 insulating base material, 202 n-type copper wiring, 203 p-type copper wiring, 300 insulating resin.

Claims (3)

A heterojunction type back contact cell,
A wiring sheet electrically connected to the heterojunction type back contact cell,
The heterojunction type back contact cell,
A semiconductor substrate of a first conductivity type or a second conductivity type;
A first conductivity type amorphous semiconductor film and a second conductivity type amorphous semiconductor film, which are provided on one side of the semiconductor substrate;
A first electrode on the first conductive type amorphous semiconductor film;
A second electrode on the second conductive type amorphous semiconductor film,
The wiring sheet is
An insulating base material,
A first wiring on the insulating base material, and a second wiring,
The first electrode is electrically connected to the first wiring,
The second electrode is electrically connected to the second wiring,
At least one of the relationship that the width of the first electrode is greater than or equal to the width of the first wiring and the width of the second electrode is greater than or equal to the width of the second wiring is satisfied.
The first wiring and the second wiring each have a strip shape,
The said 1st electrode and the said 2nd electrode are each a photoelectric conversion apparatus which is strip|belt-shaped. 2. The photoelectric conversion device according to claim 1, wherein both ends of the first electrode in the width direction protrude from the ends of the first wiring in the width direction. The photoelectric conversion device according to claim 1 or 2, wherein both ends of the second electrode in the width direction respectively protrude from the ends of the second wiring in the width direction.

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