JP2012138533A - Solar cell string and solar cell module - Google Patents
Solar cell string and solar cell module Download PDFInfo
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- JP2012138533A JP2012138533A JP2010291434A JP2010291434A JP2012138533A JP 2012138533 A JP2012138533 A JP 2012138533A JP 2010291434 A JP2010291434 A JP 2010291434A JP 2010291434 A JP2010291434 A JP 2010291434A JP 2012138533 A JP2012138533 A JP 2012138533A
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- 239000000758 substrate Substances 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 11
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、太陽電池ストリング、および太陽電池モジュール、特に、太陽電池ストリングを構成する太陽電池セルの配置に関する。 The present invention relates to a solar cell string and a solar cell module, and more particularly to an arrangement of solar cells constituting the solar cell string.
太陽光エネルギを直接電気エネルギに変換する太陽電池セルは、近年、特に地球環境問題の観点から、次世代のエネルギ源としての期待が急激に高まっている。太陽電池セルとしては、化合物半導体または有機材料を用いたものなど様々な種類があるが、現在、主流となっているのは、シリコン結晶を用いたものである。 In recent years, solar cells that directly convert solar energy into electric energy have been rapidly expected as next-generation energy sources, particularly from the viewpoint of global environmental problems. There are various types of solar cells, such as those using compound semiconductors or organic materials, but the mainstream is currently using silicon crystals.
現在、最も多く製造および販売されている太陽電池セルは、入射光側の面である受光面と、受光面の反対側である裏面とに電極が形成された構造のものである。 At present, the most manufactured and sold solar cells have a structure in which electrodes are formed on a light receiving surface which is a surface on the incident light side and a back surface which is the opposite side of the light receiving surface.
しかしながら、受光面に電極を形成した場合、電極における光の反射、吸収があることから、形成された電極の面積分だけ入射する太陽光が減少するので、裏面にのみ電極を形成した裏面電極型太陽電池セルが開発されており、裏面電極型太陽電池セルを用いた太陽電池モジュールも開発されている。太陽電池モジュールは、複数の太陽電池セルを電気的に接続して太陽電池ストリングにし、その太陽電池ストリングを樹脂等で封止したものである。 However, when an electrode is formed on the light-receiving surface, since there is reflection and absorption of light at the electrode, the incident sunlight is reduced by the area of the formed electrode. Solar cells have been developed, and solar cell modules using back electrode type solar cells have also been developed. A solar cell module is obtained by electrically connecting a plurality of solar cells to form a solar cell string, and sealing the solar cell string with a resin or the like.
図１５は、特許文献１に開示されている裏面接合型太陽電池セル（以下「太陽電池セル」という。）を表す図である。図１５（ａ）は、裏面側から見た図であり、図１５（ｂ）は、図１５（ａ）で示した矢印から見たＧ−Ｇ′の断面を表す図である。太陽電池セル１０１の裏面には、ｎ電極１０２、ｐ電極１０３が形成され、太陽電池セルの裏面側には、櫛形状のｎ＋層１０４、櫛形状のｐ＋層１０５が形成されている。１２１はシリコン基板である。 FIG. 15 is a diagram illustrating a back junction solar cell disclosed in Patent Document 1 (hereinafter referred to as “solar cell”). FIG. 15A is a view seen from the back side, and FIG. 15B is a view showing a cross section of GG ′ seen from the arrow shown in FIG. An n electrode 102 and a p electrode 103 are formed on the back surface of the solar battery cell 101, and a comb-shaped n + layer 104 and a comb-shaped p + layer 105 are formed on the back surface side of the solar battery cell. 121 is a silicon substrate.
図１６は、特許文献１に開示されている、太陽電池セルを接続するための配線基板を表す平面図である。配線基板１０６には、太陽電池セル１０１のｎ電極１０２に接続するｎ配線１０７、太陽電池セル１０１のｐ電極１０３に接続するｐ配線１０８、およびｎ配線１０７とｐ配線１０８とを接続する接続電極１０９が形成されている。 FIG. 16 is a plan view showing a wiring board for connecting solar cells disclosed in Patent Document 1. As shown in FIG. The wiring substrate 106 includes an n wiring 107 connected to the n electrode 102 of the solar battery cell 101, a p wiring 108 connected to the p electrode 103 of the solar battery cell 101, and a connection electrode connecting the n wiring 107 and the p wiring 108. 109 is formed.
図１７は、配線基板１０６に複数の太陽電池セル１０１が配置された太陽電池ストリングを受光面側から見た図である。なお、図では、接続電極１０９を省略している。太陽電池ストリング１１０は、配線基板１０６のｎ配線１０７、ｐ配線１０８に、それぞれ、太陽電池セル１０１のｎ電極１０２、ｐ電極１０３が接続されるように、複数の太陽電池セル１０１が配置されている。 FIG. 17 is a view of a solar cell string in which a plurality of solar cells 101 are arranged on the wiring substrate 106 as viewed from the light receiving surface side. In the drawing, the connection electrode 109 is omitted. In the solar cell string 110, a plurality of solar cells 101 are arranged so that the n electrode 102 and the p electrode 103 of the solar cell 101 are connected to the n wiring 107 and the p wiring 108 of the wiring substrate 106, respectively. Yes.
図１８は、太陽電池セルを直列にしたものを複数列に並べた太陽電池ストリングを受光面側から見た図である。太陽電池ストリング１１１は、太陽電池セル１０１を直列にしたものを２列並べている。１１２は配線基板である。図では、接続電極を省略している。図１９は、図１８で示した矢印から見たＨ−Ｈ′の断面を表す図である。 FIG. 18 is a view of a solar cell string in which solar cells arranged in series are arranged in a plurality of rows as viewed from the light receiving surface side. The solar cell string 111 has two rows of solar cells 101 arranged in series. Reference numeral 112 denotes a wiring board. In the figure, connection electrodes are omitted. FIG. 19 is a diagram illustrating a cross section taken along line HH ′ as viewed from the arrow illustrated in FIG. 18.
太陽電池セルでは、シリコン基板１２１の導電型と同じ導電型の電極は、シリコン基板１２１と同電位となるが、シリコン基板１２１の導電型と異なる導電型の電極は、ｐｎ接合で生じる電位差をシリコン基板１２１との間に有する。例えば、シリコン基板の導電型がｎ型であるとすると、ｎ電極１０２とシリコン基板１２１とは同電位であるが、ｐ電極１０３とシリコン基板１２１とはｐｎ接合で生じる電位差を有することになる。 In the solar cell, an electrode having the same conductivity type as that of the silicon substrate 121 has the same potential as that of the silicon substrate 121, but an electrode having a conductivity type different from that of the silicon substrate 121 causes the potential difference generated at the pn junction to be silicon. Between the substrate 121. For example, if the conductivity type of the silicon substrate is n-type, the n electrode 102 and the silicon substrate 121 have the same potential, but the p electrode 103 and the silicon substrate 121 have a potential difference generated at the pn junction.
したがって、図１９のように、隣り合う太陽電池セル１０１の、向かい合う端部に最も近い電極が、ｎ電極１０２、ｐ電極１０３と異なっており、シリコン基板１２１がｎ型の場合、シリコン基板１２１とｎ電極１０２とは同電位となるが、シリコン基板１２１とｐ電極１０３とは電位差を有することになる。 Therefore, as shown in FIG. 19, the electrodes closest to the facing ends of the adjacent solar cells 101 are different from the n electrode 102 and the p electrode 103, and when the silicon substrate 121 is n-type, Although the potential is the same as that of the n-electrode 102, the silicon substrate 121 and the p-electrode 103 have a potential difference.
その結果、それぞれの太陽電池セル端部で、太陽電池セルの厚み方向における電位分布が異なり、太陽電池セル間に電位分布の偏りが生じる。そして、太陽電池セルの間隔が狭いほど、その電位分布の偏りが太陽電池セル特性に影響を及ぼし、太陽電池ストリング特性を低下させることもあった。 As a result, the potential distribution in the thickness direction of the solar cells is different at each solar cell end, and the potential distribution is biased between the solar cells. And as the space | interval of a photovoltaic cell is narrow, the bias | inclination of the electric potential distribution has an influence on a photovoltaic cell characteristic, and it might have reduced the photovoltaic string characteristic.
図２０は、隣り合う太陽電池セルの端部に最も近い電極の導電型が、シリコン基板の導電型と異なる場合の図である。３０１はｎ型シリコン基板、３０２はｐ＋層、３０３はｐ電極、３０４はｐ配線である。この場合、隣り合う太陽電池セル同士で、シリコン基板と電極間の電位差は同様であるが、それぞれの太陽電池セルの端部で、太陽電池セルの厚み方向における電位分布により、太陽電池セルとその外側とに電位分布の偏りが生じる。この場合も、上記同様、電位分布の偏りが太陽電池セル特性に影響を及ぼし、太陽電池ストリング特性を低下させることもあった。 FIG. 20 is a diagram in the case where the conductivity type of the electrode closest to the end portion of the adjacent solar battery cell is different from the conductivity type of the silicon substrate. Reference numeral 301 denotes an n-type silicon substrate, 302 denotes a p + layer, 303 denotes a p electrode, and 304 denotes a p wiring. In this case, the potential difference between the silicon substrate and the electrode is the same between adjacent solar cells, but at the end of each solar cell, the potential distribution in the thickness direction of the solar cell causes the solar cell and its The potential distribution is biased outward. Also in this case, as described above, the bias in the potential distribution has an influence on the solar cell characteristics, which may deteriorate the solar cell string characteristics.
本発明は、上記の問題に鑑みてなされたものであり、その目的は、太陽電池セル端部の厚み方向における電位分布による太陽電池セルの特性低下を抑制することが可能な太陽電池ストリングを提供することにある。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a solar battery string capable of suppressing deterioration of the characteristics of the solar battery cell due to the potential distribution in the thickness direction of the end part of the solar battery cell. There is to do.
本発明の太陽電池ストリングは、裏面電極型太陽電池セルが、第１方向と、第１方向に直交する第２方向にそれぞれ複数配置されている太陽電池ストリングであって、裏面電極型太陽電池セルは、シリコン基板の受光面とは反対側の面である裏面に、第１導電型用電極と、第２導電型用電極とを有し、第１導電型用電極は、シリコン基板の第１方向に延在し、第２導電型用電極は、第１導電型用電極に沿って延在しており、第２方向において隣接する裏面電極型太陽電池セルは、裏面電極型太陽電池セルの端部に最も近い電極同士が同じ導電型であるように配置されている。 The solar cell string of the present invention is a solar cell string in which a plurality of back electrode type solar cells are respectively arranged in a first direction and a second direction orthogonal to the first direction, and the back electrode type solar cell. Has a first conductivity type electrode and a second conductivity type electrode on the back surface opposite to the light receiving surface of the silicon substrate, and the first conductivity type electrode is the first conductivity type electrode of the silicon substrate. Extending in the direction, the second conductivity type electrode extends along the first conductivity type electrode, and the back electrode type solar cell adjacent in the second direction is a back electrode type solar cell. It arrange | positions so that the electrodes nearest to an edge part may be the same conductivity type.
ここで、本発明の太陽電池ストリングは、シリコン基板は、第１導電型であり、裏面電極型太陽電池セルの端部に最も近い電極は、第１導電型用電極であってもよい。 Here, in the solar cell string of the present invention, the silicon substrate may be the first conductivity type, and the electrode closest to the end portion of the back electrode type solar cell may be the first conductivity type electrode.
また、本発明の太陽電池ストリングは、裏面電極型太陽電池セルは、シリコン基板の受光面に受光面不純物半導体層が形成されてもよい。 In the solar cell string of the present invention, in the back electrode type solar cell, the light receiving surface impurity semiconductor layer may be formed on the light receiving surface of the silicon substrate.
また、本発明の太陽電池ストリングは、裏面電極型太陽電池セルの端部に最も近い電極は、受光面不純物半導体層と電気的に接続してもよい。 In the solar cell string of the present invention, the electrode closest to the end of the back electrode type solar cell may be electrically connected to the light-receiving surface impurity semiconductor layer.
また、本発明の太陽電池ストリングは、裏面電極型太陽電池セルは、第１導電型用電極、第２導電型用電極用の配線を有する配線基材に配置されてもよい。 Moreover, as for the solar cell string of this invention, a back surface electrode type photovoltaic cell may be arrange | positioned at the wiring base material which has the wiring for 1st conductivity type electrodes and 2nd conductivity type electrodes.
また、本発明の太陽電池モジュールは、太陽電池ストリングと、透明基材と、太陽電池ストリングと透明基材との間にある封止材とを有してもよい。 Moreover, the solar cell module of this invention may have a solar cell string, a transparent base material, and the sealing material between a solar cell string and a transparent base material.
本発明によれば、隣り合う裏面電極型太陽電池セルの、それぞれの端部に最も近い電極の導電型を、同じにすることで、裏面電極型太陽電池セル端部の厚み方向における電位分布による隣接する太陽電池セルの特性低下を抑え、太陽電池ストリングの特性低下を抑制することができる。 According to the present invention, by making the conductivity types of the electrodes closest to the respective end portions of the adjacent back electrode type solar cells adjacent to each other, the potential distribution in the thickness direction of the back electrode type solar cell end portions is the same. It is possible to suppress the deterioration of the characteristics of the adjacent solar battery cells and to suppress the deterioration of the characteristics of the solar battery string.
図１は、本発明の裏面電極型太陽電池セルの一例を表す図である。図１（ａ）は、裏面側から見た図であり、図１（ｂ）は、図１（ａ）で示した矢印から見たＡ−Ａ′の断面を表す図である。裏面電極型太陽電池セル１の裏面には、ｎ型用電極２、ｐ型用電極３がライン状に並んで形成され、裏面電極型太陽電池セル１の裏面側には、裏面電極型太陽電池セルの１辺方向にｎ型半導体領域４、ｐ型半導体領域５が、交互にライン形状に形成されている。２１はｎ型シリコン基板である。また、裏面電極型太陽電池セル１において、ライン状に並んでいる電極の、最も外側の電極はｎ型用電極２である。なお、ｎ型半導体領域４、ｐ型半導体領域５は、必ずしも交互に形成されている必要はない。さらに、ｎ型用電極２、およびｐ型用電極３はライン毎に一体形状であってもよい。 FIG. 1 is a diagram illustrating an example of a back electrode type solar cell according to the present invention. Fig.1 (a) is the figure seen from the back surface side, FIG.1 (b) is a figure showing the cross section of AA 'seen from the arrow shown in Fig.1 (a). An n-type electrode 2 and a p-type electrode 3 are formed in a line on the back surface of the back electrode type solar cell 1, and a back electrode type solar cell is formed on the back surface side of the back electrode type solar cell 1. N-type semiconductor regions 4 and p-type semiconductor regions 5 are alternately formed in a line shape in one side direction of the cell. 21 is an n-type silicon substrate. In the back electrode type solar cell 1, the outermost electrode of the electrodes arranged in a line is the n-type electrode 2. Note that the n-type semiconductor regions 4 and the p-type semiconductor regions 5 are not necessarily formed alternately. Furthermore, the n-type electrode 2 and the p-type electrode 3 may be integrated with each other.
図２は、本発明の裏面電極型太陽電池セルを接続するための配線基材を表す平面図である。配線基材６には、裏面電極型太陽電池セル１のｎ型用電極２に接続するｎ配線７、裏面電極型太陽電池セル１のｐ型用電極３に接続するｐ配線８、およびｎ配線７とｐ配線８とを接続する接続電極９が形成されている。なお、配線基材は、基材に配線が形成されており、基材は、例えばシート状、基板状等の絶縁体である。 FIG. 2 is a plan view showing a wiring substrate for connecting the back electrode type solar cells of the present invention. The wiring substrate 6 includes an n wiring 7 connected to the n-type electrode 2 of the back electrode type solar cell 1, a p wiring 8 connected to the p type electrode 3 of the back electrode type solar cell 1, and an n wiring. A connection electrode 9 for connecting 7 and the p wiring 8 is formed. In addition, the wiring base material has wiring formed on the base material, and the base material is an insulator such as a sheet shape or a substrate shape.
図３は、配線基材６に複数の裏面電極型太陽電池セル１が配置された太陽電池ストリングを受光面側から見た図である。なお、図では、接続電極９を省略している。太陽電池ストリング１０は、配線基材６のｎ配線７、ｐ配線８に、それぞれ、裏面電極型太陽電池セル１のｎ型用電極２、ｐ型用電極３が接続されるように、複数の裏面電極型太陽電池セル１が配置されている。なお、太陽電池ストリング１０は、裏面電極型太陽電池セル１を直列にしたものを２列並べている。 FIG. 3 is a view of a solar cell string in which a plurality of back electrode type solar cells 1 are arranged on the wiring substrate 6 as viewed from the light receiving surface side. In the figure, the connection electrode 9 is omitted. The solar cell string 10 includes a plurality of n-type electrodes 2 and p-type electrodes 3 of the back electrode type solar cell 1 connected to the n-type wiring 7 and the p-type wiring 8 of the wiring substrate 6, respectively. A back electrode type solar cell 1 is arranged. In addition, the solar cell string 10 has two rows of back electrode type solar cells 1 arranged in series.
図４は、図３で示した矢印から見たＢ−Ｂ´の断面を表す図である。隣り合う裏面電極型太陽電池セルの、向かい合う端部において、それぞれの端部に最も近い電極はｎ型用電極２である。端部のｎ型用電極２は、ｎ型シリコン基板２１と同じ導電型であるため、ｎ型シリコン基板２１とは同電位となり、裏面電極型太陽電池セル端部に、裏面電極型太陽電池セル厚み方向の電位分布がない。そのため、隣り合う裏面電極型太陽電池セルの端部間にできる電位分布は、裏面電極型太陽電池セル厚み方向の変化がなくて偏りが生じない。よって、電位分布の偏りに起因した裏面電極型太陽電池セルの特性の低下を抑えることができる。したがって、裏面電極型太陽電池セルに起因した太陽電池ストリングの特性の低下を抑えることができる。 FIG. 4 is a diagram illustrating a cross section taken along line BB ′ as viewed from the arrow illustrated in FIG. 3. In the opposite end portions of the adjacent back electrode type solar cells, the electrode closest to each end portion is the n-type electrode 2. Since the n-type electrode 2 at the end has the same conductivity type as the n-type silicon substrate 21, it has the same potential as the n-type silicon substrate 21, and the back-electrode-type solar cell is at the end of the back-electrode-type solar cell. There is no potential distribution in the thickness direction. Therefore, the potential distribution generated between the end portions of the adjacent back electrode type solar cells does not change in the thickness direction of the back electrode type solar cells and is not biased. Therefore, it is possible to suppress the deterioration of the characteristics of the back electrode type solar battery cell due to the bias of the potential distribution. Therefore, it is possible to suppress the deterioration of the characteristics of the solar cell string due to the back electrode type solar cell.
図５は、裏面電極型太陽電池セル１を直列にしたものを３列並べた太陽電池ストリング１１を受光面側から見た図であり、１２は配線基材である。図では、接続電極を省略している。図６は、図５で示した矢印から見たＣ−Ｃ′の断面を表す図である。図５、図６より、裏面電極型太陽電池セルの端部の隣り合う箇所が２箇所ある。上記２箇所とも、向かい合う裏面電極型太陽電池セルの端部において、それぞれの端部に最も近い電極はｎ型用電極２である。端部のｎ型用電極２は、ｎ型シリコン基板２１と同じ導電型であるため、実施例１と同様に、裏面電極型太陽電池セルに起因した太陽電池ストリングの特性の低下を抑えることができる。 FIG. 5 is a view of a solar cell string 11 in which three rows of back electrode type solar cells 1 arranged in series are viewed from the light receiving surface side, and 12 is a wiring substrate. In the figure, connection electrodes are omitted. FIG. 6 is a diagram illustrating a cross section taken along the line CC ′ as viewed from the arrow illustrated in FIG. 5. From FIG. 5 and FIG. 6, there are two places adjacent to the end of the back electrode type solar battery cell. In both of the above two locations, the electrode closest to each end is the n-type electrode 2 at the end of the back electrode type solar cell facing each other. Since the n-type electrode 2 at the end has the same conductivity type as the n-type silicon substrate 21, it is possible to suppress the deterioration of the characteristics of the solar cell string due to the back electrode type solar cell as in the first embodiment. it can.
実施例１、２では、ｎ型シリコン基板について記載したが、ｐ型シリコン基板を用いることも可能である。その際、裏面電極型太陽電池セルにおいて、ライン状に並んでいる電極の、最も外側の電極はｐ型用電極となり、他の構造はｎ型シリコン基板について記載した上記構造と同様である。また、配線基材もその電極に合わせた配線が配置された構造となる。 In the first and second embodiments, the n-type silicon substrate is described, but a p-type silicon substrate can also be used. At that time, in the back electrode type solar cell, the outermost electrode of the electrodes arranged in a line is the electrode for p-type, and the other structure is the same as the above-described structure described for the n-type silicon substrate. Further, the wiring substrate also has a structure in which wirings corresponding to the electrodes are arranged.
図７は、本発明の裏面電極型太陽電池セルの他の一例を表す図である。図７（ａ）は、裏面側から見た図であり、図７（ｂ）は、図７（ａ）で示した矢印から見たＬ−Ｌ′の断面を表す図である。裏面電極型太陽電池セル５０１の裏面には、ｎ型用電極５０２、ｐ型用電極５０３がライン状に並んで形成され、裏面電極型太陽電池セル５０１の裏面側には、裏面電極型太陽電池セルの１辺方向にｎ型半導体領域５０４、ｐ型半導体領域５０５が、交互にライン形状に形成されている。また、ｎ型シリコン基板５２１の受光面側には、受光面不純物半導体層であるＦＳＦ（Ｆｒｏｎｔ Ｓｕｒｆａｃｅ Ｆｉｅｌｄ）層のｎ型半導体領域５１３が形成されている。ここで、ｎ型半導体領域５０４および５１３は、ｎ型シリコン基板５２１よりもｎ型ドーパント濃度が高い。また、裏面電極型太陽電池セル５０１において、ライン状に並んでいる電極の、最も外側の電極はｎ型用電極５０２である。なお、ｎ型半導体領域５０４、ｐ型半導体領域５０５は、必ずしも交互に形成されている必要はない。さらに、ｎ型用電極５０２、およびｐ型用電極５０３はライン毎に一体形状であってもよい。 FIG. 7 is a diagram illustrating another example of the back electrode type solar battery cell of the present invention. Fig.7 (a) is the figure seen from the back surface side, FIG.7 (b) is a figure showing the cross section of LL 'seen from the arrow shown in Fig.7 (a). An n-type electrode 502 and a p-type electrode 503 are formed in a line on the back surface of the back electrode solar cell 501, and a back electrode solar cell is formed on the back surface side of the back electrode solar cell 501. N-type semiconductor regions 504 and p-type semiconductor regions 505 are alternately formed in a line shape in the direction of one side of the cell. Further, an n-type semiconductor region 513 of an FSF (Front Surface Field) layer that is a light-receiving surface impurity semiconductor layer is formed on the light-receiving surface side of the n-type silicon substrate 521. Here, the n-type semiconductor regions 504 and 513 have an n-type dopant concentration higher than that of the n-type silicon substrate 521. In the back electrode type solar cell 501, the outermost electrode of the electrodes arranged in a line is an n-type electrode 502. Note that the n-type semiconductor regions 504 and the p-type semiconductor regions 505 are not necessarily formed alternately. Furthermore, the n-type electrode 502 and the p-type electrode 503 may be integrated with each other.
図８は、配線基材５０６に複数の裏面電極型太陽電池セル５０１が配置された太陽電池ストリングを受光面側から見た図である。実施例１の図３に対応するものである。 FIG. 8 is a view of a solar cell string in which a plurality of back electrode type solar cells 501 are arranged on the wiring substrate 506 as viewed from the light receiving surface side. This corresponds to FIG. 3 of the first embodiment.
図９は、図８で示した矢印から見たＭ−Ｍ´の断面を表す図で、実施例１の図４に対応するものである。隣り合う裏面電極型太陽電池セルの、向かい合う端部において、それぞれの端部に最も近い電極はｎ型用電極５０２である。端部のｎ型用電極５０２は、ｎ型半導体領域５１３と同電位となり、裏面電極型太陽電池セル端部に、裏面電極型太陽電池セル厚み方向の電位分布がない。例えば、ｎ型半導体領域５０４がｎ型シリコン基板５２１との間に電位差があったとしても、受光面側のｎ型半導体領域５１３を形成することで、受光面と裏面電極との電位差を小さくすることができる。そのため、隣り合う裏面電極型太陽電池セルの端部間にできる電位分布は、裏面電極型太陽電池セル厚み方向の変化がなくて偏りが生じない。よって、電位分布の偏りに起因した裏面電極型太陽電池セルの特性の低下を抑えることができる。したがって、裏面電極型太陽電池セルに起因した太陽電池ストリングの特性の低下を抑えることができる。 FIG. 9 is a diagram illustrating a cross section taken along line MM ′ viewed from the arrow illustrated in FIG. 8, and corresponds to FIG. 4 of the first embodiment. At the opposite end portions of adjacent back electrode type solar cells, the electrode closest to each end portion is an n-type electrode 502. The n-type electrode 502 at the end has the same potential as the n-type semiconductor region 513, and there is no potential distribution in the thickness direction of the back electrode solar cell at the end of the back electrode solar cell. For example, even if there is a potential difference between the n-type semiconductor region 504 and the n-type silicon substrate 521, the potential difference between the light-receiving surface and the back electrode is reduced by forming the n-type semiconductor region 513 on the light-receiving surface side. be able to. Therefore, the potential distribution generated between the end portions of the adjacent back electrode type solar cells does not change in the thickness direction of the back electrode type solar cells and is not biased. Therefore, it is possible to suppress the deterioration of the characteristics of the back electrode type solar battery cell due to the bias of the potential distribution. Therefore, it is possible to suppress the deterioration of the characteristics of the solar cell string due to the back electrode type solar cell.
実施例３では、ｎ型シリコン基板について記載したが、ｐ型シリコン基板を用いることも可能である。その際、裏面電極型太陽電池セルにおいて、ライン状に並んでいる電極の、最も外側の電極はｐ型用電極となり、受光面側にはｐ型半導体領域を形成する。他の構造はｎ型シリコン基板について記載した上記構造と同様である。また、配線基材もその電極に合わせた配線が配置された構造となる。なお、実施例１〜３の場合には、ｎ型シリコン基板を用いて最も外側の電極がｎ型用電極である裏面電極型太陽電池セルと、ｐ型シリコン基板を用いて最も外側の電極がｐ型用電極である裏面電極型太陽電池セルとが隣り合ってもよい。 Although the n-type silicon substrate has been described in the third embodiment, a p-type silicon substrate can also be used. At this time, in the back electrode type solar cell, the outermost electrode of the electrodes arranged in a line is a p-type electrode, and a p-type semiconductor region is formed on the light receiving surface side. Other structures are the same as those described above for the n-type silicon substrate. Further, the wiring substrate also has a structure in which wirings corresponding to the electrodes are arranged. In the case of Examples 1 to 3, a back electrode type solar cell in which the outermost electrode is an n-type electrode using an n-type silicon substrate, and the outermost electrode is formed using a p-type silicon substrate. A back electrode type solar battery cell which is a p-type electrode may be adjacent.
図１０は、本発明のＥＷＴ（Ｅｍｉｔｔｅｒ Ｗｒａｐ Ｔｈｒｏｕｇｈ）型の裏面電極型太陽電池セルの一例を表す図である。図１０（ａ）は、裏面側から見た図であり、図１０（ｂ）は、図１０（ａ）で示した矢印から見たＤ−Ｄ′の断面を表す図である。ＥＷＴ型の裏面電極型太陽電池セル２０１の裏面には、ｎ型用電極２０２、ｐ型用電極２０３がライン状に並んで形成され、ＥＷＴ型の裏面電極型太陽電池セル２０１の裏面側には、ＥＷＴ型の裏面電極型太陽電池セルのｎ型半導体領域２０４、ｐ型半導体領域２０５が形成されて、ｎ型半導体領域２０４は裏面側から受光面側に貫通して受光面全体または一部を被覆して受光面不純物半導体層を形成している。２２１はｐ型シリコン基板である。また、ＥＷＴ型の裏面電極型太陽電池セル２０１において、ライン状に並んでいる電極の、最も外側の電極はｎ型用電極２０２である。 FIG. 10 is a diagram illustrating an example of an EWT (Emitter Wrap Through) type back electrode type solar cell according to the present invention. FIG. 10A is a view seen from the back side, and FIG. 10B is a view showing a cross section taken along the line DD ′ seen from the arrow shown in FIG. An n-type electrode 202 and a p-type electrode 203 are formed in a line on the back surface of the EWT back electrode solar cell 201, and on the back surface side of the EWT back electrode solar cell 201. The n-type semiconductor region 204 and the p-type semiconductor region 205 of the EWT back electrode type solar cell are formed, and the n-type semiconductor region 204 penetrates from the back surface side to the light receiving surface side so as to cover the entire or a part of the light receiving surface. A light-receiving surface impurity semiconductor layer is formed by covering. Reference numeral 221 denotes a p-type silicon substrate. In the EWT back electrode solar cell 201, the outermost electrode of the electrodes arranged in a line is an n-type electrode 202.
図１１は、本発明のＥＷＴ型の裏面電極型太陽電池セルを接続するための配線基材を表す平面図である。配線基材２０６には、ＥＷＴ型の裏面電極型太陽電池セル２０１のｎ型用電極２０２に接続するｎ配線２０７、裏面電極型太陽電池セル２０１のｐ型用電極２０３に接続するｐ配線２０８、およびｎ配線２０７とｐ配線２０８とを接続する接続電極２０９が形成されている。 FIG. 11 is a plan view showing a wiring substrate for connecting the EWT back electrode type solar cells of the present invention. The wiring substrate 206 includes an n wiring 207 connected to the n-type electrode 202 of the EWT-type back electrode solar cell 201, a p-wiring 208 connected to the p-type electrode 203 of the back electrode solar cell 201, A connection electrode 209 that connects the n wiring 207 and the p wiring 208 is formed.
図１２は、配線基材２０６に複数の裏面電極型太陽電池セル２０１が配置された太陽電池ストリングを受光面側から見た図である。なお、図では、接続電極２０９を省略している。太陽電池ストリング２１０は、配線基材２０６のｎ配線２０７、ｐ配線２０８に、それぞれ、裏面電極型太陽電池セル２０１のｎ型用電極２０２、ｐ型用電極２０３が接続されるように、複数の裏面電極型太陽電池セル２０１が配置されている。なお、太陽電池ストリング２１０は、裏面電極型太陽電池セル２０１を直列にしたものを２列並べている。 FIG. 12 is a view of a solar cell string in which a plurality of back electrode type solar cells 201 are arranged on the wiring substrate 206 as seen from the light receiving surface side. In the figure, the connection electrode 209 is omitted. The solar cell string 210 includes a plurality of n-type electrodes 202 and p-type electrodes 203 of the back electrode type solar cells 201 connected to the n-type wiring 207 and the p-type wiring 208 of the wiring substrate 206, respectively. A back electrode type solar cell 201 is arranged. Note that the solar cell string 210 has two rows of back electrode type solar cells 201 arranged in series.
図１３は、図１２で示した矢印から見たＥ−Ｅ′の断面を表す図である。隣り合う裏面電極型太陽電池セルの、向かい合う端部において、それぞれの端部に最も近い電極はｎ型用電極２０２である。端部のｎ型用電極２０２は、ｐ型シリコン基板２２１とは異なる導電型であるが、受光面のｎ型半導体領域２０４とは同電位となり、裏面電極型太陽電池セル端部の裏面電極型太陽電池セル厚み方向の電位分布が対象となっている。そのため、隣り合う太陽電池セルの端部間にできる電位分布は、境界領域となる裏面電極型太陽電池セル端部にて電位分布が対象となるために、裏面電極型太陽電池セル厚み方向の変化が抑制されて偏りが生じない。よって、裏面電極型太陽電池セルとその外側とに電位分布の偏りを抑制することができる。したがって、裏面電極型太陽電池セルに起因した太陽電池ストリングの低下を抑制することができる。 FIG. 13 is a diagram illustrating a cross section taken along line E-E ′ as viewed from the arrow illustrated in FIG. 12. In the opposite end portions of the adjacent back electrode type solar cells, the electrode closest to each end portion is an n-type electrode 202. The n-type electrode 202 at the end has a conductivity type different from that of the p-type silicon substrate 221, but has the same potential as the n-type semiconductor region 204 on the light receiving surface, and the back electrode type at the end of the back electrode type solar cell. The potential distribution in the thickness direction of the solar battery cell is an object. Therefore, the potential distribution created between the ends of the adjacent solar cells is subject to the potential distribution at the end of the back electrode solar cell serving as the boundary region. Is suppressed and no bias occurs. Therefore, it is possible to suppress a bias in potential distribution between the back electrode type solar battery cell and the outside thereof. Therefore, the fall of the solar cell string resulting from the back electrode type solar cell can be suppressed.
図１４は、本発明のＭＷＴ（Ｍｅｔａｌ Ｗｒａｐ Ｔｈｒｏｕｇｈ）型の裏面電極型太陽電池セルの一例を表す図である。図１４（ａ）は、裏面側から見た図であり、図１４（ｂ）は、図１４（ａ）で示した矢印から見たＦ−Ｆ′の断面を表す図である。ＭＷＴ型の裏面電極型太陽電池セル２５１の裏面には、ｎ型用電極２５２、ｐ型用電極２５３がライン状に並んで形成され、裏面電極型太陽電池セル２５１の裏面側には、裏面電極型太陽電池セル２５１のｎ型半導体領域２５４、ｐ型半導体領域２５５が形成されて、ｎ型用電極２５２が、ｎ型半導体領域２５４と同様にｐ型シリコン基板２７１を貫通して受光面全体または一部に形成された受光面不純物半導体層であるｎ型半導体領域２５４に接続されている。また、裏面電極型太陽電池セル２５１において、ライン状に並んでいる電極の、最も外側の電極はｎ型用電極２５２である。ＭＷＴ型の裏面電極型太陽電池セルを用いた太陽電池ストリングにおいても、ＥＷＴ型の裏面電極型太陽電池セルを用いた場合と同様の構造をとることにより、同様の効果が得られる。 FIG. 14 is a diagram illustrating an example of an MWT (Metal Wrap Through) type back electrode type solar cell according to the present invention. FIG. 14A is a view as seen from the back side, and FIG. 14B is a view showing a cross section of FF ′ as seen from the arrow shown in FIG. An n-type electrode 252 and a p-type electrode 253 are formed in a line on the back surface of the MWT back electrode solar cell 251, and a back electrode is formed on the back surface side of the back electrode solar cell 251. The n-type semiconductor region 254 and the p-type semiconductor region 255 of the solar cell 251 are formed, and the n-type electrode 252 penetrates the p-type silicon substrate 271 similarly to the n-type semiconductor region 254, or the entire light receiving surface or It is connected to an n-type semiconductor region 254 that is a partially formed light-receiving surface impurity semiconductor layer. In the back electrode type solar cell 251, the outermost electrode of the electrodes arranged in a line is an n-type electrode 252. Even in the solar cell string using the MWT type back electrode type solar cell, the same effect can be obtained by adopting the same structure as the case where the EWT type back electrode type solar cell is used.
実施例４、５では、ｐ型シリコン基板について記載したが、ｎ型シリコン基板を用いることも可能である。その際、裏面電極型太陽電池セルにおいて、ライン状に並んでいる電極の、最も外側の電極はｐ電極となり、他の構造はｐ型シリコン基板について記載した上記構造と同様である。また、配線基材もその電極に合わせた配線が配置された構造となる。 In the fourth and fifth embodiments, the p-type silicon substrate is described, but an n-type silicon substrate can also be used. At that time, in the back electrode type solar cell, the outermost electrode of the electrodes arranged in a line is a p-electrode, and the other structure is the same as the above-described structure described for the p-type silicon substrate. Further, the wiring substrate also has a structure in which wirings corresponding to the electrodes are arranged.
実施例１〜５に示した太陽電池ストリングの受光面側に封止材となるＥＶＡ（エチレンビニルアセテート）フィルムを設置し、その上に透明基材であるガラスを設置して、加熱することにより、太陽電池モジュールが作製される。 By installing an EVA (ethylene vinyl acetate) film serving as a sealing material on the light receiving surface side of the solar cell strings shown in Examples 1 to 5, and setting and heating glass as a transparent substrate thereon, and heating. A solar cell module is produced.
また、実施例１〜５では、配線基材を用いた太陽電池ストリングを示したが、裏面電極型太陽電池セル間をインターコネクタで接続した太陽電池ストリングの場合も同様である。なお、インターコネクタは、裏面電極型太陽電池セル間を電気的に接続する金属材料で形成されたものである。 Moreover, although the solar cell string which used the wiring base material was shown in Examples 1-5, the case of the solar cell string which connected between back electrode type solar cells with the interconnector is the same. The interconnector is formed of a metal material that electrically connects the back electrode type solar cells.
１ 裏面電極型太陽電池セル、２ ｎ型用電極、３ ｐ型用電極、４ ｎ型半導体領域、５ ｐ型半導体領域、６ 配線基材、７ ｎ配線、８ ｐ配線、９ 接続電極、１０ 太陽電池ストリング、１１ 太陽電池ストリング、１２ 配線基材、２１ ｎ型シリコン基板、１０１ 太陽電池セル、１０２ ｎ電極、１０３ ｐ電極、１０４ ｎ＋層、１０５ ｐ＋層、１０６ 配線基板、１０７ ｎ配線、１０８ ｐ配線、１０９ 接続電極、１１０ 太陽電池ストリング、１１１ 太陽電池ストリング、１１２ 配線基板、１２１ シリコン基板、２０１ 裏面電極型太陽電池セル、２０２ ｎ型用電極、２０３ ｐ型用電極、２０４ ｎ型半導体領域、２０５ ｐ型半導体領域、２０６ 配線基材、２０７ ｎ配線、２０８ ｐ配線、２０９ 接続電極、２１０ 太陽電池ストリング、２２１ ｐ型シリコン基板、２５１ 裏面電極型太陽電池セル、２５２ ｎ型用電極、２５３ ｐ型用電極、２５４ ｎ型半導体領域、２５５ ｐ型半導体領域、２７１ ｐ型シリコン基板、３０１ ｎ型シリコン基板、３０２ ｐ＋層、３０３ ｐ電極、３０４ ｐ配線、５０１ 裏面電極型太陽電池セル、５０２ ｎ型用電極、５０３ ｐ型用電極、５０４ ｎ型半導体領域、５０５ ｐ型半導体領域、５０６ 配線基材、５０７ ｎ配線、５０８ ｐ配線、５１０ 太陽電池ストリング、５１３ ｎ型半導体領域、５２１ ｐ型シリコン基板。
DESCRIPTION OF SYMBOLS 1 Back electrode type solar cell, 2 n-type electrode, 3 p-type electrode, 4 n-type semiconductor region, 5 p-type semiconductor region, 6 wiring substrate, 7 n wiring, 8 p wiring, 9 connection electrode, 10 Solar cell string, 11 Solar cell string, 12 Wiring substrate, 21 n-type silicon substrate, 101 Solar cell, 102 n electrode, 103 p electrode, 104 n + layer, 105 p + layer, 106 wiring substrate, 107 n wiring , 108 p wiring, 109 connection electrode, 110 solar cell string, 111 solar cell string, 112 wiring substrate, 121 silicon substrate, 201 back electrode type solar cell, 202 n type electrode, 203 p type electrode, 204 n type Semiconductor region, 205 p-type semiconductor region, 206 wiring substrate, 207 n wiring, 208 p wiring, 209 connection electrode, 210 solar cell string, 2 1 p-type silicon substrate, 251 back electrode type solar cell, 252 n-type electrode, 253 p-type electrode, 254 n-type semiconductor region, 255 p-type semiconductor region, 271 p-type silicon substrate, 301 n-type silicon substrate, 302 p + layer, 303 p electrode, 304 p wiring, 501 back electrode type solar cell, 502 n type electrode, 503 p type electrode, 504 n type semiconductor region, 505 p type semiconductor region, 506 wiring substrate, 507 n wiring, 508 p wiring, 510 solar cell string, 513 n-type semiconductor region, 521 p-type silicon substrate.
Claims (6)
前記裏面電極型太陽電池セルは、シリコン基板の受光面とは反対側の面である裏面に、第１導電型用電極と、第２導電型用電極とを有し、
前記第１導電型用電極は、前記シリコン基板の前記第１方向に延在し、
前記第２導電型用電極は、前記第１導電型用電極に沿って延在しており、
前記第２方向において隣接する裏面電極型太陽電池セルは、前記裏面電極型太陽電池セルの端部に最も近い電極同士が同じ導電型であるように配置されている太陽電池ストリング。 A solar cell string in which a plurality of back electrode type solar cells are respectively arranged in a first direction and a second direction orthogonal to the first direction,
The back electrode type solar cell has a first conductivity type electrode and a second conductivity type electrode on the back surface which is the surface opposite to the light receiving surface of the silicon substrate,
The first conductivity type electrode extends in the first direction of the silicon substrate,
The second conductivity type electrode extends along the first conductivity type electrode;
The back electrode type solar cells adjacent in the second direction are solar cell strings arranged such that the electrodes closest to the end portions of the back electrode type solar cells are of the same conductivity type.
透明基材と、
前記太陽電池ストリングと前記透明基材との間にある封止材とを有する太陽電池モジュール。
The solar cell string according to any one of claims 1 to 5,
A transparent substrate;
The solar cell module which has the sealing material which exists between the said solar cell string and the said transparent base material.
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