JP6747562B2 - Crystal wafer - Google Patents

Description

The present invention is a crystal wafer

2. Description of the Related Art In recent years, operating frequencies of various electronic devices have been increased, and packages have been downsized (especially height reduction). With such higher frequencies and smaller packages, crystal vibration devices (for example, crystal oscillators and crystal oscillators) are also required to respond to higher frequencies and smaller packages.

In this type of crystal vibrating device, its housing is composed of a substantially rectangular parallelepiped package. The package includes a first sealing member and a second sealing member made of crystal, and a crystal diaphragm made of crystal and having excitation electrodes formed on both main surfaces. The first sealing member and the second sealing member are laminated and joined via a crystal diaphragm, and the excitation electrodes of the crystal diaphragm arranged inside the package (internal space) are hermetically sealed (for example, , Patent Document 1). Hereinafter, such a laminated structure of the crystal vibrating device is referred to as a sandwich structure.

By the way, in this type of crystal vibrating device, a wafer in which a plurality of packages are assembled is manufactured in a manufacturing process, and is cut into pieces by dicing or the like to be separated into individual packages. Further, conventionally, it is known that a plurality of crystal vibrating pieces are separated from each other by breaking each crystal vibrating piece from a wafer (for example, refer to Patent Document 2).

JP, 2010-252051, A JP, 2008-092505, A

However, it is to separate the individual packages by a breaking method from the state of a wafer in which a plurality of packages of the above-described quartz vibration device are assembled, to form the quartz vibration plate, the first sealing member, and the second sealing member. Each of the sealing members needs to be separated from the wafer, which has been difficult in the past.

The present invention has been made in consideration of the above-mentioned circumstances, and an object thereof is to provide a crystal wafer that can be easily separated into individual pieces by breaking the package of the crystal vibration device.

The present invention has the following means for solving the above-mentioned problems. That is, the present invention provides a first sealing member wafer in which a plurality of first sealing members are assembled, a crystal diaphragm wafer in which a plurality of crystal diaphragms are assembled, and a plurality of second sealing members. A crystal wafer in which a plurality of crystal vibration device packages are collected by stacking the collected second sealing member wafers, wherein the package includes the crystal vibration plate and the crystal vibration plate. The first and second sealing members that cover from above and below are laminated, and the first sealing member wafer is formed by assembling a plurality of the first sealing members that are substantially rectangular in a plan view. In addition, each of the first sealing members has a first sealing member support portion that is provided on one side of the first sealing member in a plan view and is spaced apart from the first sealing member. The first sealing member wafer is configured to be connected via a second connecting portion, and the first sealing member wafer has one end on one side of the first sealing member of each of the first and second connecting portions. Is formed with a groove portion along one side of the first sealing member, and the groove portion is an inner edge of the first and second connecting portions closer to the center position of one side of the first sealing member. , Extending from a connection portion with one side of the first sealing member toward a corner of the first sealing member, and each groove reaches the corner of the first sealing member. Not, the crystal diaphragm wafer is formed by assembling a plurality of the crystal diaphragms each having a substantially rectangular shape in a plan view, and each crystal diaphragm is arranged on one side of the crystal diaphragm in a plan view. Is connected to a support portion for a crystal diaphragm provided separately from the first and second connecting portions, and the crystal diaphragm wafer has the first and second connection portions. A groove is formed along one side of the crystal diaphragm at one end of each side of the crystal diaphragm, and the groove is one side of the crystal diaphragm of the first and second connecting portions. From the connecting portion between the inner edge on the side closer to the central position and one side of the crystal diaphragm, each extending toward the corner of the crystal diaphragm, and each groove is the crystal diaphragm. Of the second sealing member, the plurality of second sealing members each having a substantially rectangular shape in plan view are gathered, and each second sealing member is in a plan view. The second sealing member is connected to a second sealing member support portion, which is provided on one side of the second sealing member, apart from the second sealing member, via first and second connecting portions. In the wafer for the second sealing member, a groove is formed along one side of the second sealing member at an end of each of the first and second connecting portions on one side of the second sealing member. A groove is formed, and the groove portion is a connecting portion between an inner edge of the first and second connecting portions closer to the center position of one side of the second sealing member and one side of the second sealing member. From the first sealing member to the corner of the second sealing member, and the respective groove portions do not reach the corner of the second sealing member. The first connecting portion, the first connecting portion of the crystal diaphragm wafer, and the first connecting portion of the second sealing member wafer are provided at positions substantially corresponding to each other in plan view, Further, the second connecting portion of the first sealing member wafer, the second connecting portion of the crystal diaphragm wafer, and the second connecting portion of the second sealing member wafer are flat surfaces. It is characterized in that they are provided at positions that substantially coincide with each other.

According to the above configuration, since the crystal diaphragm, the first sealing member, and the second sealing member of each package are provided with the first and second connecting portions, respectively, in the first and second connecting portions. The crystal diaphragm, the first sealing member, and the second sealing member can be easily separated. Therefore, it is possible to easily separate each package from a crystal wafer in which a plurality of packages of the crystal vibrating device are assembled by breaking it. Further, the force required for breaking the package (the crystal diaphragm, the first sealing member, the second sealing member) can be reduced by the groove portion, and the damage to the package at the time of breaking can be reduced. You can In addition, since the groove does not reach the corner of the package (the crystal diaphragm, the first sealing member, the second sealing member), when the groove is formed by wet etching, the package is anisotropy of the crystal wafer. It is possible to suppress the loss (chamfering) of the corners of the.

In the above structure, the groove portions formed on the first sealing member wafer, the groove portions formed on the crystal diaphragm wafer, and the groove portions formed on the second sealing member wafer are It may be formed along a direction perpendicular to the X-axis direction of the crystal wafer.

According to the above configuration, when the groove is formed by wet etching, it is possible to suppress the chipping (chamfering) of the corner of the package due to the anisotropy of the crystal wafer.

In the above structure, the inner edges of the first and second connecting portions formed on the first sealing member wafer, and the first and second connecting portions formed on the crystal diaphragm wafer. The inner edge and the inner edge of each of the first and second connecting portions formed on the second sealing member wafer may be formed in a curved shape.

According to the above configuration, the inner edge of each of the first and second connecting portions has a shape with no corners other than the both end portions, so that the inner edge and the package (crystal diaphragm, first sealing) The stress at the time of breaking can be reliably concentrated on the connection portion with the long side of the member, the second sealing member), and the fracture of the crystal wafer can be reliably generated at the connection portion.

In the above structure, the end of each of the first and second connecting portions of the crystal diaphragm wafer on the side of the supporting portion has a width in plan view more than the end on one side of the crystal diaphragm. The ends of the first sealing member wafer on the side of the supporting portion of the first sealing member wafer are flatter than the ends of the first sealing member on the side of one side. The width of the second sealing member wafer is large, and the end of each of the first and second connecting portions of the second sealing member wafer on the side of the supporting portion is an end on one side of the second sealing member. The width in plan view may be larger than that of the portion.

According to the above configuration, the stress generated at the time of breaking is such that the inner edges (first, second, first, and second connecting portions of the package (the crystal diaphragm, the first sealing member, the second sealing member) are It is easy to concentrate on the connection part between the side of the second connection portion and the side of the package which is closer to the center position of the side of the package. Therefore, the crystal wafer is ruptured from the connection portion as a starting point, and the rupture is advanced in a substantially straight line along one side of the package, so that the package can be easily singulated. Therefore, when the package is broken, the package can be easily separated from the crystal wafer at the end of the first connecting portion on one side of the package, and burrs, breaks, and chipping marks such as chipping are not generated. Therefore, it is possible to suppress the appearance defect of the package.

In the above structure, the outer edge of each of the first and second connecting portions of the crystal diaphragm that is far from the central position of one side of the crystal diaphragm is connected to a corner of the crystal diaphragm. An outer edge farther from a central position of one side of each of the first and second connecting portions of the first sealing member wafer is a corner portion of the first sealing member. An outer edge of the second sealing member wafer remote from the central position of one side of each of the first and second connecting members of the second sealing member wafer is the second sealing member. May be connected to the corners of.

According to the above configuration, the stress generated at the time of breaking off each package is likely to concentrate on the corners of the package (the crystal diaphragm, the first sealing member, the second sealing member). The breakage occurring at the connection between the inner edge of the second connection portion and one side of the package can be smoothly advanced from the connection to the corner of the package, and each package can be easily formed from the crystal wafer. Can be separated into individual pieces.

In the above structure, the first and second connecting portions of the crystal diaphragm wafer are provided on one long side of the crystal diaphragm, and the first and second connecting members of the first sealing member wafer are provided. The connecting portion is provided on one long side of the first sealing member, and the first and second connecting portions of the second sealing member wafer are one long side of the second sealing member. It may be provided on the side.

According to the above configuration, by pressing the center position of the other long side of the first sealing member, each package can be easily separated into individual pieces from the crystal wafer.

According to the present invention, it is possible to easily separate each package from a crystal wafer, in which a plurality of crystal unit packages are assembled, by breaking them.

FIG. 1 is a flowchart showing an example of a method of manufacturing a crystal unit according to this embodiment. FIG. 2 is a schematic plan view showing a crystal wafer according to this embodiment. FIG. 3 is an enlarged view showing a part of the crystal wafer of FIG. FIG. 4 is an exploded perspective view showing a first sealing member wafer, a crystal diaphragm wafer, and a second sealing member wafer that form the crystal wafer of FIG. FIG. 5 is a schematic configuration diagram showing an example of a crystal unit that is diced from the crystal wafer according to the present embodiment. FIG. 6 is a schematic plan view showing a first sealing member of the crystal unit of FIG. FIG. 7 is a schematic rear view showing the first sealing member of the crystal unit of FIG. FIG. 8 is a schematic plan view showing a crystal diaphragm of the crystal unit shown in FIG. FIG. 9 is a schematic rear view showing the crystal diaphragm of the crystal unit shown in FIG. FIG. 10 is a schematic plan view showing a second sealing member of the crystal unit of FIG. FIG. 11 is a schematic rear view showing the second sealing member of the crystal unit shown in FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Before describing the crystal wafer according to the present embodiment, first, the crystal vibrating device will be described. Below, as an example of a crystal vibrating device, a crystal resonator 10 as shown in FIGS. 5 to 11 will be described.

-Crystal oscillator-
As shown in FIG. 5, the crystal resonator 10 is formed on the one main surface 211 of the crystal diaphragm 2 so as to cover the crystal diaphragm 2 and the first excitation electrodes 221 (see FIG. 8) of the crystal diaphragm 2. The first sealing member 3 that hermetically seals the first excitation electrode 221 and the other main surface 212 of the crystal diaphragm 2 are covered with the second excitation electrode 222 (see FIG. 9) of the crystal diaphragm 2, and The excitation electrode 221 and the second sealing member 4 that hermetically seals the second excitation electrode 222 formed in a pair are provided. In the crystal unit 10, the first sealing member 3 and the second sealing member 4 are laminated and bonded via the crystal diaphragm 2 to form a package 12 having a substantially rectangular parallelepiped sandwich structure. ..

In the crystal unit 10, the crystal diaphragm 2 and the first sealing member 3 are joined together, and the crystal diaphragm 2 and the second sealing member 4 are joined together to form the internal space 13 of the package 12. In the internal space 13 of the package 12, the vibrating portion 22 including the first excitation electrode 221 and the second excitation electrode 222 formed on both main surfaces 211 and 212 of the crystal diaphragm 2 is hermetically sealed. The crystal unit 10 has a package size of, for example, 1.0×0.8 mm, and is intended to be downsized and have a low profile. Further, with the miniaturization, in the package 12, the electrodes are made conductive by using the through holes (first to third through holes) without forming the castellation.

Next, each structure of the quartz crystal resonator 10 having the sandwich structure will be described with reference to FIGS. It should be noted that here, each member which is configured as a single unit in which the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 are not joined will be described.

As shown in FIGS. 8 and 9, the crystal diaphragm 2 is a piezoelectric substrate made of crystal, and both main surfaces (one main surface 211 and the other main surface 212) thereof are formed as flat smooth surfaces (mirror surface processing). ing. As the crystal diaphragm 2, an AT-cut crystal plate that vibrates the thickness shear is used. In the crystal diaphragm 2 shown in FIGS. 8 and 9, both main surfaces 211 and 212 of the crystal diaphragm 2 are XZ′ planes. On this XZ′ plane, the direction parallel to the lateral direction (short side direction) of the crystal diaphragm 2 is the X-axis direction, and the direction parallel to the longitudinal direction (long side direction) of the crystal diaphragm 2 is the Z′ axis. It is considered as a direction. The AT cut is 35° around the X-axis with respect to the Z-axis among the three crystal axes of the artificial crystal, the electric axis (X-axis), the mechanical axis (Y-axis), and the optical axis (Z-axis). This is a processing method of cutting out at an angle inclined by 15'. In the AT-cut quartz plate, the X axis coincides with the crystal axis of quartz. The Y′ axis and the Z′ axis correspond to the axes inclined by 35° 15′ from the Y axis and the Z axis of the crystal axis of quartz, respectively. The Y′-axis direction and the Z′-axis direction correspond to the cutting directions when cutting the AT-cut crystal plate.

A pair of excitation electrodes (first excitation electrode 221 and second excitation electrode 222) are formed on both main surfaces 211 and 212 of the crystal diaphragm 2. The crystal diaphragm 2 includes a vibrating portion 22 formed in a substantially rectangular shape, an outer frame portion 23 surrounding the outer periphery of the vibrating portion 22, and a connecting portion (holding portion) 24 that connects the vibrating portion 22 and the outer frame portion 23. And the vibrating portion 22, the connecting portion 24, and the outer frame portion 23 are integrally provided. The connecting portion 24 is provided only at one place between the vibrating portion 22 and the outer frame portion 23, and the place where the connecting portion 24 is not provided is a space (gap) 22b. Although not shown, the vibrating portion 22 and the connecting portion 24 are formed thinner than the outer frame portion 23. Due to the difference in thickness between the outer frame portion 23 and the connecting portion 24, the natural frequency of piezoelectric vibration of the outer frame portion 23 and the connecting portion 24 is different, and the outer frame portion 23 is affected by the piezoelectric vibration of the connecting portion 24. Becomes difficult to resonate.

The connecting portion 24 extends (projects) from only one corner portion 22a of the vibrating portion 22 located in the +X direction and the −Z′ direction to the outer frame portion 23 in the −Z′ direction. As described above, since the connecting portion 24 is provided at the corner portion 22a of the outer peripheral end portion of the vibrating portion 22 where the displacement of the piezoelectric vibration is relatively small, the connecting portion 24 is provided at a portion other than the corner portion 22a (the center of the side). Section, it is possible to suppress leakage of piezoelectric vibration to the outer frame section 23 via the connecting section 24, and to vibrate the vibrating section 22 more efficiently. Further, compared to the case where two or more connecting portions 24 are provided, the stress acting on the vibrating portion 22 can be reduced, and the frequency shift of the piezoelectric vibration due to such stress can be reduced to stabilize the piezoelectric vibration. It is possible to improve the sex.

The first excitation electrode 221 is provided on one main surface side of the vibrating portion 22, and the second excitation electrode 222 is provided on the other main surface side of the vibrating portion 22. The first excitation electrode 221 and the second excitation electrode 222 have extraction electrodes (first extraction electrode 223, second extraction electrode 224) for connecting to external electrode terminals (one external electrode terminal 431, another external electrode terminal 432). Are connected. The first extraction electrode 223 is extracted from the first excitation electrode 221, and is connected to the connection bonding pattern 27 formed on the outer frame portion 23 via the connection portion 24. The second extraction electrode 224 is extracted from the second excitation electrode 222 and is connected to the connection bonding pattern 28 formed on the outer frame portion 23 via the connection portion 24. Thus, the first extraction electrode 223 is formed on one main surface side of the connecting portion 24, and the second extraction electrode 224 is formed on the other main surface side of the connecting portion 24. The first excitation electrode 221 and the first extraction electrode 223 are, for example, a base PVD film formed by physical vapor phase growth on the one main surface 211, and a physical vapor phase growth on the base PVD film to form a stacked layer. And the electrode PVD film. The second excitation electrode 222 and the second extraction electrode 224 are, for example, a base PVD film formed by physical vapor deposition on the other main surface 212, and a physical vapor deposition on the base PVD film, and are stacked and formed. And the electrode PVD film.

On both main surfaces 211 and 212 of the crystal diaphragm 2, vibration-side sealing portions 25 for joining the crystal diaphragm 2 to the first sealing member 3 and the second sealing member 4 are provided, respectively. A vibration-side first bonding pattern 251 for bonding to the first sealing member 3 is formed on the vibration-side sealing portion 25 of the one main surface 211 of the crystal diaphragm 2. A vibration-side second bonding pattern 252 for bonding to the second sealing member 4 is formed on the vibration-side sealing portion 25 on the other main surface 212 of the crystal diaphragm 2. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are provided on the outer frame portion 23 described above, and are formed in an annular shape in a plan view. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are provided so as to be close to the outer peripheral edges of both main surfaces 211 and 212 of the crystal diaphragm 2. The pair of first excitation electrode 221 and second excitation electrode 222 of the crystal diaphragm 2 are not electrically connected to the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252.

The vibration-side first bonding pattern 251 is, for example, an underlying PVD film 2511 formed by physical vapor deposition on the one main surface 211, and an electrode formed by physical vapor deposition on the underlying PVD film 2511 by lamination. The PVD film 2512. The vibration-side second bonding pattern 252 is, for example, an underlying PVD film 2521 formed by physical vapor deposition on the other main surface 212, and an electrode formed by physical vapor deposition on the underlying PVD film 2521 by lamination. The PVD film 2522. That is, the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 have the same configuration, and are formed by stacking a plurality of layers on the vibration-side sealing portion 25 of both main surfaces 211 and 212. A Ti layer (or Cr layer) and an Au layer are formed by vapor deposition from the lowermost layer side. Thus, in the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252, the underlying PVD films 2511 and 2521 are made of a single material (Ti (or Cr)), and the electrode PVD films 2512 and 2522 are formed. The electrode PVD films 2512 and 2522 are made of a single material (Au) and are thicker than the underlying PVD films 2511 and 2521. Further, the first excitation electrode 221 and the vibration side first bonding pattern 251 formed on the one main surface 211 of the crystal diaphragm 2 have the same thickness, and the first excitation electrode 221 and the vibration side first bonding pattern 251 are formed. Of the same metal, the second excitation electrode 222 and the vibration side second bonding pattern 252 formed on the other main surface 212 of the crystal diaphragm 2 have the same thickness, and the second excitation electrode 222 and the vibration side The surface of the second bonding pattern 252 is made of the same metal. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are non-Sn patterns.

Further, as shown in FIGS. 8 and 9, the quartz crystal diaphragm 2 has one through hole (first through hole 26) penetrating between the one main surface 211 and the other main surface 212. The first through hole 26 is provided in the outer frame portion 23 of the crystal diaphragm 2. The first through hole 26 is connected to the connection joint pattern 453 of the second sealing member 4.

As shown in FIGS. 5, 8 and 9, in the first through hole 26, a through electrode 261 for establishing electrical continuity between electrodes formed on the one main surface 211 and the other main surface 212 is provided. It is formed along the inner wall surface of. Then, the central portion of the first through hole 26 becomes a hollow through portion 262 that penetrates between the one main surface 211 and the other main surface 212. Connection joint patterns 264 and 265 are formed around the outer periphery of the first through hole 26. The connecting joint patterns 264 and 265 are provided on both main surfaces 211 and 212 of the crystal diaphragm 2.

The connecting joint pattern 264 of the first through hole 26 formed on the one main surface 211 of the crystal diaphragm 2 extends in the outer frame portion 23 along the X-axis direction. Further, a connection joint pattern 27 connected to the first extraction electrode 223 is formed on the one main surface 211 of the crystal diaphragm 2, and this connection joint pattern 27 is also formed in the outer frame portion 23 in the X-axis direction. Running along. The connecting joint pattern 27 is provided on the opposite side of the connecting joint pattern 264 in the Z′-axis direction with the vibrating section 22 (first excitation electrode 221) interposed therebetween. That is, the connecting joint patterns 27 and 264 are provided on both sides of the vibrating portion 22 in the Z′-axis direction.

Similarly, the connecting joint pattern 265 of the first through hole 26 formed on the other main surface 212 of the crystal diaphragm 2 extends in the outer frame portion 23 along the X-axis direction. Further, on the other main surface 212 of the crystal diaphragm 2, a connecting joint pattern 28 connected to the second extraction electrode 224 is formed, and this connecting joint pattern 28 is also formed in the outer frame portion 23 in the X-axis direction. Running along. The connecting joint pattern 28 is provided on the opposite side of the connecting joint pattern 265 in the Z′-axis direction with the vibrating portion 22 (the second excitation electrode 222) interposed therebetween. That is, the connecting joint patterns 28 and 265 are provided on both sides of the vibrating portion 22 in the Z′-axis direction.

The connection bonding patterns 27, 28, 264, 265 have the same configuration as the vibration-side first bonding pattern 251, the vibration-side second bonding pattern 252, and the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252. It can be formed in the same process as. Specifically, the connection bonding patterns 27, 28, 264, 265 are, for example, a base PVD film formed by physical vapor deposition on both main surfaces 211, 212 of the crystal diaphragm 2, and the base PVD. The electrode PVD film is formed by stacking physical vapor deposition on the film.

In the crystal unit 10, the first through hole 26 and the bonding patterns 27, 28, 264, 265 for connection are formed inside the inner space 13 (inside the inner peripheral surfaces of the bonding materials 11a, 11b) in a plan view. It The internal space 13 is formed inside (inside) the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 in a plan view. The inner side of the internal space 13 means strictly inside the inner peripheral surfaces of the bonding materials 11a and 11b without including the bonding materials 11a and 11b described later. The first through hole 26 and the connecting joint patterns 27, 28, 264, 265 are not electrically connected to the vibrating-side first joint pattern 251 and the vibrating-side second joint pattern 252.

As shown in FIGS. 6 and 7, the first sealing member 3 is a substantially rectangular parallelepiped substrate made of crystal, and the other main surface 312 of the first sealing member 3 (bonded to the crystal diaphragm 2). The surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, as the first sealing member 3, the AT cut crystal plate similar to the crystal diaphragm 2 described above is used.

The other main surface 312 of the first sealing member 3 is provided with a sealing-side first sealing portion 32 for joining to the crystal diaphragm 2. A first sealing-side bonding pattern 321 for bonding to the crystal diaphragm 2 is formed in the first sealing-side sealing portion 32. The sealing-side first bonding pattern 321 is formed in a ring shape in a plan view. The sealing-side first bonding pattern 321 is provided so as to be close to the outer peripheral edge of the other main surface 312 of the first sealing member 3. The sealing-side first bonding pattern 321 has the same width at all positions on the sealing-side first sealing portion 32 of the first sealing member 3.

The sealing-side first bonding pattern 321 is laminated, for example, on the underlying PVD film 3211 formed by physical vapor deposition on the first sealing member 3 and on the underlying PVD film 3211 by physical vapor deposition. It is composed of the formed electrode PVD film 3212. Note that Ti (or Cr) is used for the base PVD film 3211, and Au is used for the electrode PVD film 3212. Moreover, the sealing-side first bonding pattern 321 is a non-Sn pattern. Specifically, the sealing-side first bonding pattern 321 is configured by stacking a plurality of layers on the sealing-side first sealing portion 32 of the other main surface 312, and the Ti layer (or the Ti layer (or A Cr layer) and an Au layer are formed by vapor deposition.

On the other main surface 312 of the first sealing member 3, that is, on the surface facing the crystal diaphragm 2, connection bonding patterns 35 and 36 to be bonded to the connection bonding patterns 264 and 27 of the crystal diaphragm 2 are formed. Has been done. The connecting joint patterns 35 and 36 extend along the direction of the short side direction of the first sealing member 3 (X-axis direction in FIG. 7 ). The connecting joint patterns 35 and 36 are provided at a predetermined interval in the long side direction (Z′ axis direction of FIG. 7) of the first sealing member 3, and the connecting joint patterns 35 and 36 Z′. The distance in the axial direction is substantially the same as the distance in the Z′-axis direction (see FIG. 8) between the bonding patterns 264, 27 for connection of the crystal diaphragm 2. The connection joint patterns 35 and 36 are connected to each other via the wiring pattern 33. The wiring pattern 33 is provided between the connection joint patterns 35 and 36. The wiring pattern 33 extends along the Z′-axis direction. The wiring pattern 33 is not joined to the connecting joint patterns 264 and 27 of the crystal diaphragm 2.

The connection bonding patterns 35 and 36 and the wiring pattern 33 have the same configuration as the sealing-side first bonding pattern 321, and can be formed in the same process as the sealing-side first bonding pattern 321. Specifically, the connection bonding patterns 35 and 36 and the wiring pattern 33 are, for example, an underlying PVD film formed by physical vapor deposition on the other main surface 312 of the first sealing member 3, and the underlying PVD. The electrode PVD film is formed by stacking physical vapor deposition on the film.

In the crystal unit 10, the connection joint patterns 35 and 36 and the wiring pattern 33 are formed inside the inner space 13 (inside the inner peripheral surfaces of the joint materials 11a and 11b) in a plan view. The connection joint patterns 35 and 36 and the wiring pattern 33 are not electrically connected to the sealing-side first joint pattern 321.

As shown in FIGS. 10 and 11, the second sealing member 4 is a substantially rectangular parallelepiped substrate formed of quartz, and one main surface 411 of the second sealing member 4 (bonded to the quartz diaphragm 2). The surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, as the second sealing member 4, an AT-cut crystal plate similar to the crystal diaphragm 2 described above is used.

The one main surface 411 of the second sealing member 4 is provided with the sealing-side second sealing portion 42 for joining to the crystal diaphragm 2. A second sealing-side bonding pattern 421 for bonding to the crystal diaphragm 2 is formed on the second sealing-side sealing portion 42. The second sealing-side bonding pattern 421 is formed in a ring shape in a plan view. The sealing-side second bonding pattern 421 is provided so as to be close to the outer peripheral edge of the one main surface 411 of the second sealing member 4. The sealing-side second bonding pattern 421 has the same width at all positions on the sealing-side second sealing portion 42 of the second sealing member 4.

The second sealing pattern 421 on the sealing side is, for example, a base PVD film 4211 formed by physical vapor deposition on the second sealing member 4, and a physical vapor deposition on the base PVD film 4211 to be laminated. It is composed of the formed electrode PVD film 4212. Note that Ti (or Cr) is used for the base PVD film 4211, and Au is used for the electrode PVD film 4212. The second sealing-side bonding pattern 421 is a non-Sn pattern. Specifically, the sealing-side second bonding pattern 421 is configured by stacking a plurality of layers on the sealing-side second sealing portion 42 of the other main surface 412, and the Ti layer (or A Cr layer) and an Au layer are formed by vapor deposition.

Further, on the other main surface 412 of the second sealing member 4 (the outer main surface that does not face the crystal diaphragm 2), a pair of external electrode terminals (one external electrode terminal 431, etc.) electrically connected to the outside is provided. External electrode terminals 432) are provided. The one external electrode terminal 431 and the other external electrode terminal 432 are respectively located at both ends in the longitudinal direction of the other main surface 412 of the second sealing member 4 as shown in FIGS. The pair of external electrode terminals (one external electrode terminal 431, another external electrode terminal 432) are, for example, underlying PVD films 4311 and 4321 formed by physical vapor deposition on the other main surface 412 and an underlying PVD film 4311. , 4321 and electrode PVD films 4312, 4322 formed by physical vapor deposition and laminated. The one external electrode terminal 431 and the other external electrode terminal 432 respectively occupy one-third or more regions of the other main surface 412 of the second sealing member 4.

As shown in FIGS. 5, 10, and 11, the second sealing member 4 has two through holes (second through hole 45, third through hole) penetrating between the one main surface 411 and the other main surface 412. 46) has been formed. The second through hole 45 is connected to the connection pattern 265 for connecting the one external electrode terminal 431 and the crystal diaphragm 2. The third through hole 46 is connected to the connection pattern 28 for connecting the other external electrode terminal 432 and the crystal diaphragm 2.

In the second through hole 45 and the third through hole 46, as shown in FIGS. 5, 10 and 11, through electrodes 451 for achieving electrical continuity of the electrodes formed on the one main surface 411 and the other main surface 412. 461 is formed along the inner wall surfaces of the second through hole 45 and the third through hole 46, respectively. Then, central portions of the second through hole 45 and the third through hole 46 become hollow through portions 452 and 462 that penetrate through the one main surface 411 and the other main surface 412. Connection joint patterns 453 and 463 are formed around the outer peripheries of the second through hole 45 and the third through hole 46, respectively.

The connection bonding patterns 453, 463 are provided on the one main surface 411 of the second sealing member 4, and are bonded to the connection bonding patterns 265, 28 of the crystal diaphragm 2. The connection joint patterns 453 and 463 extend along the direction of the short side direction of the second sealing member 4 (X-axis direction in FIG. 10 ). The connection joint patterns 453 and 463 are provided at a predetermined interval in the long side direction (Z′ axis direction of FIG. 10) of the second sealing member 4, and the connection joint patterns 453 and 463 Z′. The distance in the axial direction is substantially the same as the distance in the Z′-axis direction (see FIG. 9) between the bonding patterns 265, 28 for connection of the crystal diaphragm 2.

The connection bonding patterns 453 and 463 have the same configuration as the sealing-side second bonding pattern 421 and can be formed in the same process as the sealing-side second bonding pattern 421. Specifically, the connection bonding patterns 453 and 463 are, for example, an underlying PVD film formed by physical vapor deposition on one main surface 411 of the second sealing member 4, and a physical PVD film on the underlying PVD film. It is composed of an electrode PVD film formed by stacking by vapor deposition.

In the crystal resonator 10, the second through hole 45, the third through hole 46, and the connecting joint patterns 453, 463 are formed inside the internal space 13 in plan view. The second through hole 45, the third through hole 46, and the connecting joint patterns 453 and 463 are not electrically connected to the sealing side second joint pattern 421. Also, the one external electrode terminal 431 and the other external electrode terminal 432 are not electrically connected to the sealing-side second bonding pattern 421.

In the crystal resonator 10 including the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 having the above-described configuration, the crystal diaphragm 2 and the first sealing member 3 have the vibration-side first bonding pattern 251. And the sealing-side first bonding pattern 321 are overlapped and diffusion-bonded, and the crystal diaphragm 2 and the second sealing member 4 overlap the vibration-side second bonding pattern 252 and the sealing-side second bonding pattern 421. Diffusion bonding is carried out in the combined state to manufacture the package 12 having the sandwich structure shown in FIG. As a result, the internal space 13 of the package 12, that is, the accommodation space of the vibrating portion 22 is hermetically sealed.

Then, the vibration-side first bonding pattern 251 and the sealing-side first bonding pattern 321 themselves become the bonding material 11a (see FIG. 5) generated after diffusion bonding, and the crystal vibration plate 2 and the first sealing are formed by this bonding material 11a. The member 3 is joined. The vibration-side second bonding pattern 252 and the sealing-side second bonding pattern 421 themselves become the bonding material 11b generated after diffusion bonding, and the crystal diaphragm 2 and the second sealing member 4 are bonded by this bonding material 11b. .. The joining materials 11a and 11b are formed in an annular shape in a plan view and are provided at positions substantially matching each other in a plan view. That is, the inner peripheral edges of the bonding materials 11a and 11b are provided at substantially the same positions, and the outer peripheral edges of the bonding materials 11a and 11b are provided at substantially the same positions.

The wirings from the first and second excitation electrodes 221 and 222 of the crystal diaphragm 2 to the one external electrode terminal 431 and the other external electrode terminal 432 are all inside the bonding materials 11a and 11b as a sealing part in plan view. It is provided on the one side. The bonding materials 11 a and 11 b are formed to have a substantially rectangular outer edge shape and inner edge shape in a plan view, and are formed to be close to the outer peripheral edge of the package 12. As a result, the size of the vibrating portion 22 of the crystal diaphragm 2 can be increased. The distance between the inner peripheral edges of the bonding materials 11a and 11b and the space 22b between the vibrating portion 22 and the outer frame portion 23 is larger on the short side of the package 12 than on the long side.

In addition, at this time, the above-described connection bonding patterns are also diffusion-bonded in a state of being overlapped. Specifically, the connection bonding pattern 264 of the crystal diaphragm 2 and the connection bonding pattern 35 of the first sealing member 3 are diffusion bonded. The connection bonding pattern 27 of the crystal diaphragm 2 and the connection bonding pattern 36 of the first sealing member 3 are diffusion bonded. In addition, the connection bonding pattern 265 of the crystal diaphragm 2 and the connection bonding pattern 453 of the second sealing member 4 are diffusion bonded. The connection bonding pattern 28 of the crystal diaphragm 2 and the connection bonding pattern 463 of the second sealing member 4 are diffusion bonded.

Then, the connection bonding pattern 264 and the connection bonding pattern 35 themselves become the bonding material 14a (see FIG. 5) generated after the diffusion bonding, and the crystal diaphragm 2 and the first sealing member 3 are bonded by this bonding material 14a. To be done. The bonding pattern 27 for connection and the bonding pattern 36 for connection themselves become the bonding material 14b generated after the diffusion bonding, and the crystal diaphragm 2 and the first sealing member 3 are bonded by this bonding material 14b. Further, the connection joint pattern 265 and the connection joint pattern 453 themselves become the joint material 14c generated after the diffusion joint, and the crystal diaphragm 2 and the second sealing member 4 are joined by this joint material 14c. The connection bonding pattern 28 and the connection bonding pattern 463 themselves become the bonding material 14d generated after the diffusion bonding, and the crystal diaphragm 2 and the second sealing member 4 are bonded by this bonding material 14d. These bonding materials 14a to 14d have a role of electrically connecting the through electrode of the through hole and the bonding materials 14a to 14d, and a function of hermetically sealing the bonding portion. Since the bonding materials 14a to 14d are provided inward of the bonding materials 11a and 11b as the sealing portion in plan view, they are shown by broken lines in FIG.

-Manufacturing method of crystal vibrating device-
Next, a method for manufacturing the crystal vibrating device according to the present embodiment will be described with reference to FIGS. Here, a method for manufacturing the above-described crystal resonator 10 (see FIGS. 5 to 11) will be described as an example of a method for manufacturing a crystal vibrating device.

As shown in FIG. 1, the method for manufacturing the crystal unit 10 according to the present embodiment includes a first sealing member wafer formed in the first sealing member wafer forming step (ST11), and a crystal diaphragm. 2 is formed by stacking the quartz crystal diaphragm wafer formed in the wafer forming step (ST12) and the second wafer forming sealing member formed in the second wafer forming step (ST13). A stacking step (ST14) for forming a crystal wafer (wafer stack) 100 and a singulation step (ST15) for singulating the package 12 of the crystal resonator 10 from the crystal wafer 100. .. The order of the first sealing member wafer forming step, the crystal diaphragm wafer forming step, and the second sealing member wafer forming step is not particularly limited. The first sealing member wafer forming step, the crystal diaphragm wafer forming step, and the second sealing member wafer forming step may be performed in parallel.

Here, the crystal wafer 100 will be described with reference to FIGS. As shown in FIG. 4, the crystal wafer 100 is configured as a laminated body in which a first sealing member wafer 100B, a crystal diaphragm wafer 100A, and a second sealing member wafer 100C are laminated. ..

As shown in FIG. 2, the crystal wafer 100 has a structure in which a plurality of packages 12 of the crystal unit 10 are assembled. In the example of FIG. 2, a plurality of packages 12 formed in a substantially rectangular shape in plan view are arranged in a matrix on a quartz wafer 100, and the packages are arranged in a vertical direction (X-axis direction in FIG. 2) and a horizontal direction (Z in FIG. 2). Eight packages 12 are arranged in each of the (axis directions), and a total of 64 packages 12 are provided. Note that the number of packages 12 is an example, and the number is not limited to the above number.

The crystal wafer 100 includes a support portion (crosspiece portion) 101 for supporting the plurality of packages 12. The support portion 101 extends along the Z′-axis direction of the crystal wafer 100. Both ends of the support portion 101 are integrally connected to a frame portion (outer frame portion) 102 of the crystal wafer 100. A plurality of supporting portions 101 (eight in FIG. 2) are provided at predetermined intervals in the X-axis direction of the crystal wafer 100. The frame portion 102 is a substantially rectangular frame body with one side open in plan view, and is formed in a substantially “U” shape. A support portion 101 is provided at a position corresponding to one open side of the frame portion 102, and the support portion 101 and the frame portion 102 integrally form an annular frame body.

A plurality of (eight in FIG. 2) packages 12 are supported by the support portion 101. The packages 12 are arranged at predetermined intervals in the Z′-axis direction of the crystal wafer 100. The support portion 101 is provided on one side of the package 12 in plan view. In the present embodiment, the support portion 101 is provided on one long side of the package 12 (on the +X direction side in FIG. 2).

The package 12 is connected to the support portion 101 via a connecting portion (folding portion). The connecting portion is configured to include first and second connecting portions 131 and 132 provided at a predetermined interval in the Z′-axis direction of the crystal wafer 100. The first and second connecting portions 131 and 132 extend from one long side 12a of the package 12 to the supporting portion 101 in plan view. That is, one end side (the -X direction side in FIG. 2) of the first and second connecting portions 131 and 132 is connected to one long side of the package 12, and the other end side of the first and second connecting portions 131 and 132 is connected. (+X direction side in FIG. 2) is connected to the support portion 101. The package 12 is supported by the supporting portion 101 of the crystal wafer 100 only by the first and second connecting portions 131 and 132. That is, in plan view, the outer peripheral edge of the package 12 faces the space (gap) except for the portion where the first and second connecting portions 131 and 132 are connected.

The first and second connecting portions 131 and 132 have the same configuration, and in a plan view, with respect to a straight line that passes through the center of the package 12 and is perpendicular to the long side 12a of the package 12 (for example, a straight line L1 described later). The shape is substantially line symmetrical. Hereinafter, the first connecting portion 131 will be described as a representative, and the description of the second connecting portion 132 will be omitted.

As shown in FIG. 3, in the first coupling portion 131, the width (width in the Z′-axis direction) W11 of the end portion 131a on the support portion 101 side is equal to the width (Z of the end portion 131b on the long side 12a side of the package 12 (Z Width in the axial direction) W12 (W11>W12). Of the edges (edges) 131c and 131d of the first connecting portion 131, the outer edge 131c, that is, the end farthest from the central position 12c of the long side 12a of the package 12 (the −Z′ direction side in FIG. 3). The edge is connected to a corner (vertex) 12e of the package 12 in plan view. Then, in the outer end edge 131c of the first connecting portion 131, the end edge 131e on the side of the support portion 101 is more outward than the end edge 131f on the side of the long side 12a of the package 12 in plan view (-Z' direction in FIG. 3). Side) is projected. In other words, the edge 131e on the side of the support portion 101 is provided at a position farther from the straight line L1 that passes through the central position 12c and is perpendicular to the long side 12a than the edge 131f on the side of the long side 12a of the package 12 in plan view. ing. A distance W13 between the end edge 131e on the support portion 101 side and the straight line L1 is larger than a distance W14 between the end edge 131f on the long side 12a side and the straight line L1 (W13>W14).

In the present embodiment, the outer edge 131c of the first connecting portion 131 is provided along a straight line that is inclined with respect to the straight line L1. Specifically, the outer edge 131c is provided along the straight line L2 passing through the center position 12d of the other long side 12b of the package 12 in plan view. In this case, the straight line L2 is a straight line that passes through the center position 12d of the other long side 12b of the package 12 and the corner portion 12e of the package 12 described above. In the first connecting portion 131, a portion protruding outward (a −Z′ direction side in FIG. 3) from a straight line extending the short side of the package 12 toward the supporting portion 101 side is formed in a substantially triangular shape. Although the outer edge 131c may be entirely formed along the straight line L2, a portion of the outer edge 131c on the side of the support portion 101 may be formed in a curved shape.

The inner edge 131d of the first connecting portion 131, that is, the edge closer to the central position 12c of the long side 12a of the package 12 (+Z′ direction side in FIG. 3) is the edge 131g on the supporting portion 101 side. It protrudes inward (in the +Z′ direction in FIG. 3) in a plan view from the end edge 131h on the long side 12a side of the package 12. In other words, the edge 131g on the side of the support portion 101 is provided at a position closer to the straight line L1 than the edge 131h on the side of the long side 12a of the package 12 in plan view. A distance W15 between the end edge 131g on the support portion 101 side and the straight line L1 is smaller than a distance W16 between the end edge 131h on the long side 12a side and the straight line L1 (W15<W16).

In the present embodiment, the inner edge 131d of the first connecting portion 131 is formed in a curved shape. Specifically, in the inner edge 131d, a corner between the edge 131g on the support portion 101 side and the edge 131h on the long side 12a side, in other words, a portion other than both ends is provided with a corner. It has no shape (shape without corners). In this case, the inner edge 131d is a part of an arc centered on the straight line L1. At the connecting portion 12f between the inner edge 131d and the long side 12a of the package 12, it is preferable that the angle θ1 between the tangent line of the inner edge 131d and the long side 12a of the package 12 is less than 90 degrees. The inner edge 131d may have a linear shape (for example, a shape symmetrical with the outer edge 131c), or may have a corrugated shape in which a plurality of arcs are combined.

In addition, a groove portion (recess) 133 is formed in the end portion 131b of the first connecting portion 131 on the package 12 side. The groove portion 133 is provided along the long side 12 a of the package 12. That is, the groove 133 extends along the Z′-axis direction of the crystal wafer 100. The groove 133 extends from the connecting portion 12f between the inner edge 131d and the long side 12a of the package 12 toward the corner 12e of the package 12 (toward the −Z′ direction side in FIG. 3). In the present embodiment, the groove 133 does not reach the corner 12e of the package 12, and the groove 133 is provided at a distance from the corner 12e of the package 12. That is, the groove 133 does not reach the corner 12e of the package 12, and the vicinity of the corner 12e of the package 12 is a portion where the groove is not formed. The groove 133 may reach the corner 12e of the package 12.

As described above, the crystal wafer 100 has a structure in which the first sealing member wafer 100B, the crystal diaphragm wafer 100A, and the second sealing member wafer 100C are laminated (see FIG. 4). ). The crystal diaphragm wafer 100A, the first sealing member wafer 100B, and the second sealing member wafer 100C have the same shape as the above-described crystal wafer 100 (see FIG. 2) in a plan view.

As shown in FIG. 4, the crystal diaphragm wafer 100A has a configuration in which a plurality of the above-described crystal diaphragms 2 (see FIGS. 8 and 9) are assembled. In the example of FIG. 4, a plurality of crystal diaphragms 2 are arranged in a matrix on a crystal diaphragm wafer 100A, and are arranged in a vertical direction (X-axis direction in FIG. 4) and a horizontal direction (Z′-axis direction in FIG. 4). ), eight crystal diaphragms 2 are arranged, and a total of 64 crystal diaphragms 2 are provided. Then, in the crystal diaphragm wafer 100A, the crystal diaphragm 2 is supported by the support portion 101A by the first and second connecting portions 131A and 132A, as in the case of the crystal wafer 100 described above. Both ends of the supporting portion 101A are integrally connected to the frame portion 102A. Grooves (slits) 133A, 133A are formed at the ends of the first and second connecting portions 131A, 132A on the crystal diaphragm 2 side. The groove portions 133A and 133A are preferably formed on both surfaces of the crystal diaphragm wafer 100A, but may be formed on at least one surface. It should be noted that each of the crystal diaphragms 2 of the crystal diaphragm wafer 100A has the above-described vibrating portion 22, outer frame portion 23, first excitation electrode 221, second excitation electrode 222, vibration-side first bonding pattern 251, and vibration. Although the second side bonding pattern 252, the first through hole 26, etc. are formed, they are not shown in FIG.

As shown in FIG. 4, the first sealing member wafer 100B has a configuration in which a plurality of the above-described first sealing members 3 (see FIGS. 6 and 7) are assembled. In the example of FIG. 4, a plurality of first sealing members 3 are arranged in a matrix on the first sealing member wafer 100B, and the vertical direction (X-axis direction of FIG. 4) and the horizontal direction (FIG. 4). Eight first sealing members 3 are arranged in the Z′-axis direction), and a total of 64 first sealing members 3 are provided. Then, in the first sealing member wafer 100B, the first sealing member 3 is supported by the supporting portion 101B by the first and second connecting portions 131B and 132B, as in the case of the crystal wafer 100 described above. There is. Both ends of the support portion 101B are integrally connected to the frame portion 102B. Grooves 133B and 133B are formed at the ends of the first and second connecting portions 131B and 132B on the first sealing member 3 side. The grooves 133B and 133B are preferably formed on both sides of the first sealing member wafer 100B, but may be formed on at least one side. Although each of the first sealing members 3 of the first sealing member wafer 100B has the above-described first sealing-side bonding pattern 321, the wiring pattern 33, the bonding patterns 35 and 36 for connection, and the like. The illustration is omitted in FIG.

As shown in FIG. 4, the second sealing member wafer 100C has a configuration in which a plurality of the second sealing members 4 (see FIGS. 10 and 11) described above are assembled. In the example of FIG. 4, in the second sealing member wafer 100C, the plurality of second sealing members 4 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 4) and the horizontal direction (FIG. 4). Eight second sealing members 4 are respectively arranged in the Z′-axis direction, and a total of 64 second sealing members 4 are provided. In the second sealing member wafer 100C, the second sealing member 4 is supported by the supporting portion 101C by the first and second connecting portions 131C and 132C, as in the case of the crystal wafer 100 described above. There is. Both ends of the support portion 101C are integrally connected to the frame portion 102C. Grooves 133C and 133C are formed at the ends of the first and second connecting portions 131C and 132C on the second sealing member 4 side. The grooves 133C and 133C are preferably formed on both sides of the second sealing member wafer 100C, but may be formed on at least one side. In addition, in each of the second sealing members 4 of the second sealing member wafer 100C, the above-described sealing-side second bonding pattern 421, one external electrode terminal 431, the other external electrode terminal 432, the second through hole 45, Although the third through hole 46 and the like are formed, they are not shown in FIG.

Then, the wafer 100B for the first sealing member and the wafer 100C for the second sealing member are laminated and bonded via the wafer 100A for the crystal vibration plate, so that the crystal of the sandwich structure is formed as shown in FIG. A crystal wafer 100 in which a plurality of packages 12 of the vibrator 10 are assembled is formed. In this case, the first and second connecting portions 131 and 132 of the crystal wafer 100 are the first and second connecting portions 131B and 132B of the first sealing member wafer 100B, and the first and second connecting portions of the crystal diaphragm wafer 100A. The second connecting portions 131A and 132A and the first and second connecting portions 131C and 132C of the second sealing member wafer 100C are laminated. The first and second connecting portions 131B and 132B of the first sealing member wafer 100B, the first and second connecting portions 131A and 132A of the crystal diaphragm wafer 100A, and the first of the second sealing member wafer 100C. The second connecting portions 131C and 132C have the same configuration as the first and second connecting portions 131 and 132 of the crystal wafer 100 described above (see FIG. 3). The first and second connecting portions 131B and 132B of the first sealing member wafer 100B, the first and second connecting portions 131A and 132A of the crystal diaphragm wafer 100A, and the first of the second sealing member wafer 100C. , 2nd connection part 131C, 132C is provided in the position which substantially corresponds in planar view.

Further, the groove portions 133 and 133 of the crystal wafer 100 are groove portions 133B and 133B formed on at least one surface of the first sealing member wafer 100B, and the groove portions 133A and 133A formed on at least one surface of the crystal diaphragm wafer 100A. And the groove portions 133C and 133C formed on at least one surface of the second sealing member wafer 100C. The groove portions 133B and 133B of the first sealing member wafer 100B, the groove portions 133A and 133A of the crystal diaphragm wafer 100A, and the groove portions 133C and 133C of the second sealing member wafer 100C are the groove portions 133 of the crystal wafer 100 described above. , 133 has the same configuration.

Next, each step of the method for manufacturing the crystal unit 10 illustrated in FIG. 1 will be described.

The first sealing member wafer forming step (ST11) is a step of forming the first sealing member wafer 100B as shown in FIG. As described above, the first sealing member wafer 100B has a configuration in which a plurality of first sealing members 3 each having a substantially rectangular shape in plan view are assembled, and specifically, each first sealing member 3 is formed. However, it is connected to the support portion 101B provided on one side of the first sealing member 3 in a plan view so as to be separated from the first sealing member 3 via the first and second connecting portions 131B and 132B. It has been configured.

In the first sealing member wafer forming step, the quartz blank (AT cut quartz plate) is subjected to, for example, wet etching, so that each of the first sealing members 3 and the supporting portion of the first sealing member wafer 100B. 101B, the frame portion 102B, the first and second connecting portions 131B and 132B, and the groove portions 133B and 133B are formed. Further, in each first sealing member 3, for example, a PVD base PVD method such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography). By forming the film and the electrode PVD film, the sealing-side first bonding pattern 321, the bonding patterns 35 and 36 for connection, and the wiring pattern 33 are formed. Here, the sealing-side first bonding pattern 321, the connection bonding patterns 35 and 36, and the wiring pattern 33 on the other main surface 312 of each first sealing member 3 can have the same configuration. In this case, The sealing-side first bonding pattern 321, the connection bonding patterns 35 and 36, and the wiring pattern 33 can be collectively formed by the same process.

The crystal diaphragm wafer forming step (ST12) is a step of forming the crystal diaphragm wafer 100A as shown in FIG. As described above, the crystal diaphragm wafer 100A has a configuration in which a plurality of crystal diaphragms 2 each having a substantially rectangular shape in plan view are assembled. Specifically, each crystal diaphragm 2 has a crystal shape in plan view. The vibration plate 2 is connected to a supporting portion 101A provided on one side of the vibration plate 2 so as to be separated from the crystal vibration plate 2 via first and second connecting portions 131A and 132A.

In the crystal diaphragm wafer forming step, for example, wet etching is performed on the crystal element plate (AT-cut crystal plate), so that each crystal diaphragm 2, support portion 101A, frame portion 102A of the crystal diaphragm wafer 100A, The first and second connecting portions 131A and 132A and the groove portions 133A and 133A are formed. In each crystal diaphragm 2, for example, wet etching is performed to form the space 22b between the vibrating portion 22 and the outer frame portion 23 and the first through hole 26.

Further, in each crystal diaphragm 2, for example, a PVD base film or a base PVD film is formed by a PVD method such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography). By forming the electrode PVD film, the first excitation electrode 221, the second excitation electrode 222, the first extraction electrode 223, the second extraction electrode 224, the vibration side first bonding pattern 251, the vibration side second bonding pattern 252, and The connection joint patterns 27, 28, 264, 265 are formed. Here, the first excitation electrode 221, the first extraction electrode 223, the vibration-side first bonding pattern 251, and the connecting bonding patterns 27 and 264 on the one main surface 211 of each crystal diaphragm 2 may have the same configuration. In this case, the first excitation electrode 221, the first extraction electrode 223, the vibration-side first bonding pattern 251, and the bonding patterns 27 and 264 for connection can be collectively formed in the same process. Similarly, the second excitation electrode 222, the second extraction electrode 224, the vibration-side second bonding pattern 252, and the connecting bonding patterns 28 and 265 on the other main surface 212 of each crystal diaphragm 2 may have the same configuration. In this case, the second excitation electrode 222, the second extraction electrode 224, the vibration side second bonding pattern 252, and the bonding patterns 28 and 265 for connection can be collectively formed by the same process.

The second sealing member wafer forming step (ST13) is a step of forming the second sealing member wafer 100C as shown in FIG. As described above, the second sealing member wafer 100C has a configuration in which a plurality of second sealing members 4 each having a substantially rectangular shape in plan view are assembled, and specifically, each second sealing member 4 is formed. However, it is connected to the supporting portion 101C provided on one side of the second sealing member 4 in a plan view so as to be separated from the second sealing member 4 via the first and second connecting portions 131C and 132C. It has been configured.

In the second sealing member wafer forming step, for example, wet etching is performed on the crystal blank (AT-cut quartz plate), so that each second sealing member 4 of the second sealing member wafer 100C and the supporting portion. 101C, the frame portion 102C, the first and second connecting portions 131C and 132C, and the groove portions 133C and 133C are formed. In each of the second sealing members 4, the second through hole 45 and the third through hole 46 are formed by performing wet etching, for example.

In each second sealing member 4, for example, a PVD base PVD method such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography). By forming the film and the electrode PVD film, the sealing-side second bonding pattern 421, the one external electrode terminal 431, the other external electrode terminal 432, and the bonding patterns 453 and 463 for connection are formed. Here, the sealing-side second bonding pattern 421 and the connecting bonding patterns 453, 463 of the one main surface 411 of each second sealing member 4 can have the same configuration. In this case, the same process is performed. The sealing-side second joint pattern 421 and the joint joint patterns 453 and 463 can be collectively formed.

The stacking step (ST14) includes the first sealing member wafer 100B formed in the first sealing member wafer forming step (ST11), and the crystal diaphragm formed in the crystal diaphragm wafer forming step (ST12). This is a step of forming the crystal wafer 100 by stacking the wafer 100A for use with the second wafer 100C for sealing members formed in the second wafer forming step for sealing member (ST13). That is, in the laminating step, each first sealing member 3 of the first sealing member wafer 100B, each crystal diaphragm 2 of the crystal diaphragm wafer 100A, and each second sealing member wafer 100C of the second sealing member wafer 100C. The sealing member 4 is laminated.

Specifically, the vibration-side first bonding pattern 251 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the sealing-side first bonding of each first sealing member 3 of the first sealing member wafer 100B. The pattern 321 is diffusion-bonded in a state of being overlapped, and the vibration-side second bonding pattern 252 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and each second sealing member of the second sealing member wafer 100C. Diffusion bonding is performed in a state in which the sealing side second bonding pattern 421 of No. 4 is overlapped.

Further, the connection bonding pattern 264 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the connection bonding pattern 35 of each first sealing member 3 of the first sealing member wafer 100B are diffusion bonded. The connection bonding pattern 27 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the connection bonding pattern 36 of each first sealing member 3 of the first sealing member wafer 100B are diffusion bonded. The connection bonding pattern 265 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the connection bonding pattern 453 of each second sealing member 4 of the second sealing member wafer 100C are diffusion bonded. The connection bonding pattern 28 of each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the connection bonding pattern 463 of each second sealing member 4 of the second sealing member wafer 100C are diffusion bonded.

In the laminating step, after bonding the respective first sealing members 3 of the first sealing member wafer 100B and the respective quartz diaphragms 2 of the quartz diaphragm wafer 100A, each of the quartz diaphragm wafers 100A is bonded. The crystal diaphragm 2 and each second sealing member 4 of the second sealing member wafer 100C may be bonded, or each crystal diaphragm 2 of the quartz diaphragm wafer 100A and the second sealing member may be bonded. After bonding the respective second sealing members 4 of the stopper member wafer 100C, the respective first sealing members 3 of the first sealing member wafer 100B and the respective crystal diaphragms 2 of the crystal diaphragm wafer 100A. May be joined together.

By the above-mentioned stacking process, the crystal wafer 100 in which a plurality of packages 12 of the crystal resonator 10 having a substantially rectangular parallelepiped shape are assembled is formed. In each package 12, the first sealing member 3 and the crystal diaphragm 2 have a gap of 1.00 μm or less, and the second sealing member 4 and the crystal diaphragm 2 have a gap of 1.00 μm or less. Have. That is, the thickness of the bonding material 11 between the first sealing member 3 and the crystal diaphragm 2 is 1.00 μm or less, and the bonding material 11 between the second sealing member 4 and the crystal diaphragm 2 is The thickness is 1.00 μm or less (specifically, 0.15 μm to 1.00 μm in the Au—Au junction according to the present embodiment). As a comparison, the conventional metal paste sealing material using Sn has a thickness of 5 μm to 20 μm.

In the crystal wafer 100 after the stacking step, the first connecting portion 131B of each first sealing member 3 of the first sealing member wafer 100B and the first connecting portion of each crystal diaphragm 2 of the crystal diaphragm wafer 100A. 131A and the 1st connection part 131C of each 2nd sealing member 4 of wafer 100C for the 2nd sealing member are provided in the position which substantially corresponds in plane view. The second connecting portion 132B of each first sealing member 3 of the first sealing member wafer 100B, the second connecting portion 132A of each crystal diaphragm 2 of the crystal diaphragm wafer 100A, and the second sealing member The second connecting portion 132C of each second sealing member 4 of the wafer 100C is provided at a position that substantially coincides with each other in plan view.

In the individualizing step (ST15), the first sealing member 3 of each package 12 of the crystal wafer 100 is pressed by, for example, a rod-shaped pressing member to break (separate) each package 12 from the crystal wafer 100. ), the packages 12 are separated into individual pieces. At this time, it is preferable to press a part of the package 12 (first sealing member 3) opposite to the part where the first and second connecting parts 131 and 132 are provided. Specifically, it is preferable to press the center position 12d (see FIG. 3) of the other long side 12b of the package 12.

According to the present embodiment, in the individualizing step, each package 12 can be easily individualized from the crystal wafer 100 in which a plurality of packages 12 of the crystal resonator 10 are assembled. Hereinafter, this point will be described.

In the individualizing step, the package 12 is separated into individual pieces by pressing the parts of the crystal wafer 100 on the opposite side of the parts where the first and second connecting parts 131 and 132 are provided. It has become. At this time, the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 of each package 12 are provided with the first and second connecting portions 131A, 132A, 131B, 132B, 131C, 132C. Therefore, the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 can be easily separated at the first and second connecting portions 131A, 132A, 131B, 132B, 131C, 132C. You can Specifically, at the connection point between the first and second connecting portions 131A and 132A of the crystal diaphragm wafer 100A and the crystal diaphragm 2, that is, at one long side of the crystal diaphragm 2, the crystal diaphragm 2 is connected to the crystal diaphragm 2. The first and second connecting portions 131A and 132A can be separated. Similarly, at the connection point between the first and second connecting portions 131B and 132B of the first sealing member wafer 100B and the first sealing member 3, that is, at one long side of the first sealing member 3, The first sealing member 3 and the first and second connecting portions 131B and 132B can be separated. The second sealing is performed at a connection point between the first and second connecting portions 131C and 132C of the second sealing member wafer 100C and the second sealing member 4, that is, at one long side of the second sealing member 4. The member 4 and the first and second connecting portions 131C and 132C can be separated. Therefore, each package 12 can be easily separated into individual pieces from the crystal wafer 100.

In addition, during the break-up in the individualizing step, the stress due to the pressing causes the inner edge 131d of the first connecting portion 131 (the same applies to the second connecting portion 132) of the crystal wafer 100 and the long side 12a of the package 12. It is most easy to concentrate on the connecting portion 12f. Therefore, in the present embodiment, a break is generated in the crystal wafer 100 starting from the connection portion 12f, and the break is caused to proceed in a substantially straight line along the Z′-axis direction of the crystal wafer 100, whereby the package 12 It is designed so that it can be easily separated.

In the present embodiment, the width W11 of the end portion 131a of the first connecting portion 131 on the support portion 101 side is the long side of the package 12 (the crystal diaphragm 2, the first sealing member 3, the second sealing member 4). The width W12 of the end portion 131b on the 12a side is larger than the end edge 131e on the support portion 101 side of the outer edge 131c of the first connecting portion 131, and the end edge 131f on the long side 12a side of the package 12 is larger than the end edge 131f. Is also provided at a position far from the central position 12c of the long side 12a of the package 12 in plan view. Further, a groove 133 extending in the Z′-axis direction is provided at the end 131b on the long side 12a side of the first connecting portion 131. Thereby, in the individualizing step, the breakage generated from the connecting portion 12f as a starting point can be smoothly advanced along the Z′-axis direction of the crystal wafer 100, and the package 12 can be easily separated from the crystal wafer 100, It is possible to suppress the occurrence of breakage marks such as cracks and chipping, and to suppress the occurrence of defective appearance of the package 12.

In addition, the groove portion 133 can reduce the pressing force (pressing force) required for breaking the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4), and individualization can be achieved. It is possible to reduce the damage applied to the package 12 at the time of breaking in the process. In this case, the groove portions 133B and 133B are formed on both surfaces of the first sealing member wafer 100B, the groove portions 133A and 133A are formed on both surfaces of the crystal diaphragm wafer 100A, and further, the second sealing member wafer 100C is formed. By forming the groove portions 133C and 133C on both surfaces, damage to the package 12 at the time of breaking can be further reduced.

Further, the groove 133 is formed along the direction perpendicular to the X-axis direction of the crystal wafer 100 (in this case, the Z′-axis direction), and the groove 133 is formed in the package 12 (the crystal diaphragm 2, the first sealing member 3). , The second sealing member 4) is provided at a distance from the corner 12e of the second sealing member 4). Therefore, when the groove 133 is formed by wet etching, the corner 12e of the package 12 is missing due to the anisotropy of the crystal wafer 100 ( Chamfering) can be suppressed.

Further, since the inner end edge 131d of the first connecting portion 131 has a shape with no corners other than both end portions, the inner end edge 131d and the package 12 (the crystal diaphragm 2, the first sealing member 3, The stress at the time of breaking can be reliably concentrated on the connection portion 12f with the long side 12a of the second sealing member 4), and the breakage of the crystal wafer 100 can be reliably generated at the connection portion 12f.

Moreover, since the first and second connecting portions 131 and 132 are provided on the long side 12a on the +X direction side of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4). When performing wet etching, it is possible to suppress the occurrence of defects (chamfering) at the corners on the +X direction side of the vibrating portion 22 (see FIG. 8) of the quartz vibrating plate 2 due to the anisotropy of the quartz wafer 100. That is, as compared with the case where the first and second connecting parts 131 and 132 are provided on the long side 12b on the −X direction side of the package 12, the vibrating part 22 can be formed in a shape closer to a rectangle.

Here, in the individualizing step, when the vicinity of the central position 12d of the other long side 12b of the package 12 is pressed, the force for deforming the package 12 is a pressing point (here, the long side 12b of the package 12 is used. 12d) of the first and second connecting portions 131, 132 to the connecting portion of the first and second connecting portions 131, 132 to the supporting portion 101 side (here, the edge 131e of the outer edge 131c on the supporting portion 101 side). Then, it is considered that the maximum effect is exerted on the straight line L2). Then, in the region inside the straight line (tension line), it is considered that the deformation due to the pressing and the breakage (breakage) accompanying it occur, and as described above, the breakage occurs from the connecting portion 12f, and the crystal It is possible to cause the fracture to proceed in a substantially straight line along the Z′-axis direction of the wafer 100. That is, in the region inside the tension line, it is possible to control the breakage and the like due to the pressing to some extent. On the other hand, in the region outside the tension line, it is considered that the shape is disturbed, the crystal orientation, the state, and the deformation or fracture (breakage) affected by other external factors occur. Unlike the area inside the line, it may occur in an unexpected position and direction, and is considered difficult to control.

In the present embodiment, the outer edge 131c of the first connecting portion 131 (the same applies to the second connecting portion 132) is provided along the straight line L2 corresponding to the tension line in plan view, so that the folding is performed. A place that needs to be broken for removal, specifically, a place between a corner 12e of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4) and the connecting portion 12f. Can all be included in the region inside the tension line (straight line L2). As a result, the breakage can be generated only in the portion necessary for breaking off, and the appearance defect of the package 12 can be suppressed.

In the above-described embodiment, the crystal vibrating device is the crystal oscillator, but the present invention can be applied to a crystal vibrating device (for example, a crystal oscillator) other than the crystal oscillator.

Further, in the above-described embodiment, the first and second connecting portions 131 and 132 are provided on the long side 12a side of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4). The first and second connecting portions may be provided on the short side of the package 12.

The present invention can be embodied in various other forms without departing from the spirit, the spirit or the main feature of the present invention. Therefore, the above-described embodiments are merely examples in all respects, and should not be limitedly interpreted. The scope of the present invention is defined by the scope of the claims, and is not bound by the text of the specification. Furthermore, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

INDUSTRIAL APPLICABILITY The present invention can be used for a crystal wafer in which a plurality of crystal vibration device packages are assembled.

100 Quartz Wafer 10 Quartz Resonator 12 Package 100A Quartz Diaphragm Wafer 2 Quartz Oscillator 101A Support 131A First Connection 132A Second Connection 133A Groove 100B First Seal Wafer 3 First Seal 101B Support Part 131B 1st connection part 132B 2nd connection part 133B groove part 100C Wafer for 2nd sealing member 4 2nd sealing member 101C Support part 131C 1st connection part 132C 2nd connection part 133C groove part

Claims (6)

A first sealing member wafer in which a plurality of first sealing members are assembled, a crystal diaphragm wafer in which a plurality of crystal diaphragms are assembled, and a second seal in which a plurality of second sealing members are assembled. A crystal wafer in which a plurality of crystal vibration device packages are assembled by stacking a stopper member wafer,
The package has a structure in which the crystal diaphragm and the first and second sealing members that cover the crystal diaphragm from above and below are stacked.
In the first sealing member wafer, the plurality of first sealing members each having a substantially rectangular shape in plan view are gathered, and each first sealing member is located on one side of the first sealing member in plan view. It is configured to be connected to a first sealing member support portion that is provided apart from the first sealing member via first and second connecting portions,
In the first sealing member wafer, a groove portion is formed along one side of the first sealing member at an end portion of each of the first and second connecting portions on one side of the first sealing member. The groove portion is formed from a connecting portion between an inner edge of the first and second connecting portions closer to the center position of one side of the first sealing member and one side of the first sealing member. Each extending toward the corner of the first sealing member, and each groove does not reach the corner of the first sealing member,
The crystal diaphragm wafer is formed by assembling a plurality of crystal diaphragms each having a substantially rectangular shape in plan view, and each crystal diaphragm is separated from the crystal diaphragm on one side of the crystal diaphragm in plan view. It is configured to be connected to the provided crystal diaphragm support portion via first and second connection portions,
In the crystal diaphragm wafer, a groove is formed along one side of the crystal diaphragm at one end of each side of the crystal diaphragm of each of the first and second connecting portions, and the groove is From the connecting portion between the inner edge of the first and second connecting portions on the side closer to the central position of one side of the crystal diaphragm and the one side of the crystal diaphragm toward the corners of the crystal diaphragm, respectively. It extends, and each groove does not reach the corner of the crystal diaphragm,
The second sealing member wafer includes a plurality of second sealing members each having a substantially rectangular shape in a plan view, and each second sealing member is located on one side of the second sealing member in a plan view. It is configured to be connected to a second sealing member support portion that is provided apart from the second sealing member via first and second connecting portions,
In the second sealing member wafer, a groove portion is formed along one side of the second sealing member at an end portion of each of the first and second connecting portions on one side of the second sealing member. The groove portion is formed from a connecting portion between an inner edge of the first and second connecting portions closer to the center position of one side of the second sealing member and one side of the second sealing member. Each extending toward the corner of the second sealing member, and each groove does not reach the corner of the second sealing member,
The first connecting portion of the first sealing member wafer, the first connecting portion of the crystal diaphragm wafer, and the first connecting portion of the second sealing member wafer are seen in a plan view. The second connecting portion of the wafer for the first sealing member, the second connecting portion of the wafer for the crystal vibration plate, and the second connecting portion of the wafer for the second sealing member which are provided at substantially the same position. A crystal wafer, wherein the second connecting portion is provided at a position substantially coincident with each other in a plan view. The crystal wafer according to claim 1,
The groove portions formed on the first sealing member wafer, the groove portions formed on the crystal diaphragm wafer, and the groove portions formed on the second sealing member wafer are the X-shaped portions of the crystal wafer. A crystal wafer, which is formed along a direction perpendicular to the axial direction. The crystal wafer according to claim 1 or 2,
Inner edge of each of the first and second connecting portions formed on the first sealing member wafer, inner edge of each of the first and second connecting portions formed on the crystal diaphragm wafer, A quartz wafer, wherein the inner edges of the first and second connecting portions formed on the second sealing member wafer are formed in a curved shape. The crystal wafer according to any one of claims 1 to 3,
The end of each of the first and second connecting portions of the crystal diaphragm wafer on the side of the supporting portion has a width in plan view larger than the end of each side of the crystal diaphragm on one side. ,
The end of each of the first and second connecting portions of the wafer for the first sealing member on the side of the supporting portion has a width in plan view that is larger than the end of the first sealing member on the side of one side. Is getting bigger,
The end portion of each of the first and second connecting portions of the second sealing member wafer on the side of the support portion has a width in plan view that is larger than the end portion of the second sealing member on one side. A crystal wafer characterized by being large. The crystal wafer according to any one of claims 1 to 4,
The outer edges of the first and second connecting portions of the crystal diaphragm that are farther from the central position of one side of the crystal diaphragm are connected to the corners of the crystal diaphragm.
The outer edge of the first sealing member wafer on the side farther from the central position of one side of each of the first and second connecting members is located at a corner of the first sealing member. Connected,
The outer edge of each of the first and second connecting portions of the second sealing member wafer on the side farther from the central position of one side of the second sealing member is located at a corner of the second sealing member. A crystal wafer characterized by being connected. The crystal wafer according to claim 5,
The first and second connecting portions of the crystal diaphragm wafer are provided on one long side of the crystal diaphragm,
The first and second connecting portions of the first sealing member wafer are provided on one long side of the first sealing member,
The crystal wafer, wherein the first and second connecting portions of the second sealing member wafer are provided on one long side of the second sealing member.

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