JP2019201432A - Crystal wafer - Google Patents

Abstract

To provide a crystal wafer that can be easily separated into pieces by breaking a package of a crystal vibration device.SOLUTION: First and second connecting portions 131B and 132B of a first sealing member wafer 100B, first and second connecting portions 131A and 132A of a crystal diaphragm wafer 100A, and first and second connecting portions 131C and 132C of a second sealing member wafer 100C are provided at positions that substantially coincide with each other in plan view. Grooves 133 (groove part 133A of the crystal diaphragm wafer 100A, groove part 133B of the first sealing member wafer 100B, groove part 133C of the second sealing member wafer 100C) are formed in a direction perpendicular to the X-axis direction of a crystal wafer 100. The groove 133 does not reach a corner 12e of a package 12 (crystal diaphragm 2, first sealing member 3, and second sealing member 4).SELECTED DRAWING: Figure 3

Description

  The present invention relates to a quartz wafer.

  In recent years, the operating frequency of various electronic devices has been increased, and the size of packages has been reduced (especially low profile). With such higher frequency and smaller packages, crystal vibrating devices (for example, crystal resonators and crystal oscillators) are also required to respond to higher frequencies and smaller packages.

  In this type of crystal oscillating device, the casing is formed of a substantially rectangular parallelepiped package. The package includes a first sealing member and a second sealing member made of crystal, and a crystal vibrating plate made of crystal and having excitation electrodes formed on both main surfaces. The first sealing member and the second sealing member are laminated and joined via a quartz crystal plate, and the excitation electrode of the quartz plate arranged in the package (internal space) is hermetically sealed (for example, , See Patent Document 1). Hereinafter, such a laminated form of the crystal vibrating device is referred to as a sandwich structure.

  By the way, this type of quartz crystal vibrating device is separated into individual packages by manufacturing a wafer in which a plurality of packages are assembled in a manufacturing process and cutting the wafer by dicing or the like. Conventionally, it is known that a quartz crystal resonator element is separated from a wafer in which a plurality of crystal oscillator pieces are assembled (see, for example, Patent Document 2).

JP 2010-252051 A JP 2008-092505 A

  However, separating each package from the state of a wafer in which a plurality of packages of the quartz crystal vibrating device as described above are assembled by a folding method means that the quartz vibrating plate, the first sealing member, and the second Each of the sealing members must be separated from the wafer, which has been difficult in the past.

  The present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to provide a crystal wafer that can be easily separated into pieces by folding a package of a crystal vibration device.

  In the present invention, means for solving the above-described problems are configured as follows. That is, the present invention includes a first sealing member wafer in which a plurality of first sealing members are aggregated, a crystal diaphragm wafer in which a plurality of crystal diaphragms are aggregated, and a plurality of second sealing members. A plurality of quartz vibration device packages are assembled by stacking the assembled second sealing member wafers, and the package includes the quartz crystal vibrating plate and the quartz crystal vibrating plate. The first and second sealing members covering from above and below are stacked, and the first sealing member wafer is a collection of a plurality of the first sealing members having a substantially rectangular shape in plan view. And each 1st sealing member is 1st to the 1st sealing member support part spaced apart from the 1st sealing member in the 1st side of the 1st sealing member by plane view, It is configured to be connected via a second connecting portion, and in the first sealing member wafer, A groove portion is formed along one side of the first sealing member at an end portion on one side of the first sealing member of each of the first and second connecting portions. From the connecting portion between the inner end edge of the connecting portion closer to the center position of one side of the first sealing member and one side of the first sealing member, toward the corner of the first sealing member, respectively. And the respective groove portions do not reach the corners of the first sealing member, and the crystal diaphragm wafer is assembled with a plurality of the crystal diaphragms having a substantially rectangular shape in plan view, In addition, each crystal diaphragm is connected via a first and a second connection part to a support part for a crystal diaphragm that is provided on one side of the crystal diaphragm in a plan view so as to be separated from the crystal diaphragm. In the crystal diaphragm wafer, one side of the crystal diaphragm of each of the first and second connecting portions Is formed with a groove portion along one side of the crystal diaphragm, and the groove portion has an inner edge on the side closer to the center position of one side of the crystal diaphragm of the first and second connecting portions. , Each extending from a connecting portion with one side of the crystal diaphragm toward the corner of the crystal diaphragm, and each groove does not reach the corner of the crystal diaphragm, In the second sealing member wafer, a plurality of the second sealing members having a substantially rectangular shape in a plan view are assembled, and each second sealing member is arranged on one side of the second sealing member in a plan view. 2 is configured to be connected to the second sealing member support portion provided apart from the sealing member via the first and second connection portions, and in the second sealing member wafer, In the end of one side of the second sealing member of each of the first and second connecting portions, a groove is formed along one side of the second sealing member. And the groove portion is a connecting portion between the inner edge of the first and second connecting portions on the side closer to the center position of one side of the second sealing member and one side of the second sealing member. To the corners of the second sealing member, and the grooves do not reach the corners of the second sealing member, and the first sealing member wafer. The first connecting portion, the first connecting portion of the quartz vibrating plate wafer, and the first connecting portion of the second sealing member wafer are provided at substantially the same position in plan view, Further, the second connecting portion of the first sealing member wafer, the second connecting portion of the quartz vibrating plate wafer, and the second connecting portion of the second sealing member wafer are planar. It is provided in the position which corresponds substantially visually.

  According to the above configuration, since the first and second connecting portions are provided in each of the crystal diaphragm, the first sealing member, and the second sealing member of each package, in the first and second connecting portions, Each of the crystal diaphragm, the first sealing member, and the second sealing member can be easily separated. Therefore, each package can be easily separated into individual pieces from a crystal wafer in which a plurality of packages of the crystal vibration device are assembled. In addition, the force required for folding the package (quartz crystal plate, first sealing member, second sealing member) can be reduced by the groove portion, and the damage applied to the package during folding can be reduced. Can do. Further, since the groove portion does not reach the corner portion of the package (quartz crystal plate, first sealing member, second sealing member), when the groove portion is formed by wet etching, the package due to the anisotropy of the crystal wafer It is possible to suppress the chipping (chamfering) of the corners.

  In the above configuration, each groove formed in the first sealing member wafer, each groove formed in the quartz vibrating plate wafer, and each groove formed in the second sealing member wafer are The crystal wafer may be formed along a direction perpendicular to the X-axis direction.

  According to the above configuration, when the groove is formed by wet etching, it is possible to suppress the chipping (chamfering) of the corner of the package due to the anisotropy of the crystal wafer.

  In the above configuration, each inner end edge of the first and second connecting portions formed on the first sealing member wafer and each of the first and second connecting portions formed on the crystal diaphragm wafer. An inner edge and each inner edge of the first and second connecting portions formed on the second sealing member wafer may be formed in a curved shape.

  According to the above configuration, the inner edge of each of the first and second connecting portions has a shape with no corners other than the both ends, so the inner edge and the package (the crystal diaphragm, the first sealing) The stress at the time of folding can be reliably concentrated on the connecting portion with the long side of the member, the second sealing member), and the crystal wafer can be reliably broken at the connecting portion.

  In the above configuration, each of the first and second connecting portions of the crystal vibration plate wafer has an end portion on the support portion side that is wider in a plan view than an end portion on one side of the crystal vibration plate. The end portions on the support portion side of the first and second connecting portions of the first sealing member wafer are larger than the end portions on one side of the first sealing member. The width of the second sealing member is increased in width, and the support portion side end of each of the first and second connecting portions of the second sealing member wafer is an end on one side of the second sealing member. The width in plan view may be larger than the portion.

  According to the above configuration, the stress generated at the time of folding is caused by the inner edge (first, second) of the first and second connecting portions of the package (quartz crystal plate, first sealing member, second sealing member). It is easy to concentrate on the connection part between the second connecting part and the one side of the package. Therefore, the crystal wafer is ruptured starting from the connecting portion, and the rupture is progressed substantially linearly along one side of the package so that the package can be easily separated. Therefore, when the package is folded, the package can be easily separated from the crystal wafer at the end of one side of the package of the first connecting portion, and breakage marks such as burrs, cracks, and chipping are generated. It can suppress and generation | occurrence | production of the external appearance defect of a package can be suppressed.

  In the above configuration, the outer edge of the first and second connecting portions of the crystal diaphragm wafer on the side far from the center position of one side of the crystal diaphragm is coupled to the corner of the crystal diaphragm. The outer edge of the first sealing member wafer on the side far from the center position of one side of the first sealing member of each of the first and second connecting portions is a corner portion of the first sealing member. The outer edge of the second sealing member wafer on the side farther from the center position of one side of the second sealing member of the second sealing member wafer is the second sealing member. It may be connected to the corners.

  According to the above configuration, the stress generated when each package is folded is easily concentrated on the corners of the package (quartz crystal plate, first sealing member, second sealing member). Breakage that occurs in the connecting portion between the inner edge of the second connecting portion and one side of the package can be smoothly advanced from the connecting portion toward the corner of the package, and each package can be easily removed from the crystal wafer. Can be singulated.

  The said structure WHEREIN: The said 1st, 2nd connection part of the said wafer for quartz-crystal diaphragms is provided in one long side of the said quartz-crystal diaphragm, The said 1st, 2nd of the said wafer for 1st sealing members The connecting portion is provided on one long side of the first sealing member, and the first and second connecting portions of the second sealing member wafer are one long side of the second sealing member. It may be provided on the side.

  According to the said structure, by pressing the center position of the other long side of a 1st sealing member, each package can be easily separated by folding from a quartz wafer.

  According to the present invention, it is possible to easily divide each package from a crystal wafer in which a plurality of packages of crystal resonators are assembled, by folding.

FIG. 1 is a flowchart showing an example of a method for manufacturing a crystal resonator according to the present embodiment. FIG. 2 is a schematic plan view showing the crystal wafer according to the present embodiment. FIG. 3 is an enlarged view showing a part of the crystal wafer of FIG. FIG. 4 is an exploded perspective view showing the first sealing member wafer, the crystal vibrating plate wafer, and the second sealing member wafer constituting the crystal wafer of FIG. FIG. 5 is a schematic configuration diagram showing an example of a crystal resonator separated from the crystal wafer according to the present embodiment. FIG. 6 is a schematic plan view showing a first sealing member of the crystal resonator of FIG. FIG. 7 is a schematic back view showing the first sealing member of the crystal resonator of FIG. FIG. 8 is a schematic plan view showing a crystal diaphragm of the crystal resonator of FIG. FIG. 9 is a schematic back view showing the crystal diaphragm of the crystal resonator of FIG. FIG. 10 is a schematic plan view showing a second sealing member of the crystal resonator of FIG. FIG. 11 is a schematic back view showing a second sealing member of the crystal resonator of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  Before describing the crystal wafer according to the present embodiment, first, a crystal vibration device will be described. Hereinafter, as an example of the crystal vibrating device, a crystal resonator 10 as shown in FIGS. 5 to 11 will be described.

-Crystal resonator-
As shown in FIG. 5, the crystal unit 10 covers the crystal plate 2 and the first excitation electrode 221 (see FIG. 8) of the crystal plate 2 and is formed on one main surface 211 of the crystal plate 2. A first sealing member 3 that hermetically seals the first excitation electrode 221 and the second main surface 212 of the crystal diaphragm 2 cover the second excitation electrode 222 (see FIG. 9) of the crystal diaphragm 2, and the first And a second sealing member 4 that hermetically seals the second excitation electrode 222 formed in a pair with the excitation electrode 221. In the crystal unit 10, the first sealing member 3 and the second sealing member 4 are laminated and bonded via the crystal diaphragm 2, thereby forming a package 12 having a substantially rectangular parallelepiped sandwich structure. .

  In the crystal unit 10, the crystal diaphragm 2 and the first sealing member 3 are joined, and the crystal diaphragm 2 and the second sealing member 4 are joined to form an internal space 13 of the package 12. The vibrating portion 22 including the first excitation electrode 221 and the second excitation electrode 222 formed on both main surfaces 211 and 212 of the quartz crystal diaphragm 2 is hermetically sealed in the internal space 13 of the package 12. The crystal unit 10 has a package size of, for example, 1.0 × 0.8 mm, and is designed to be downsized and low-profile. Further, with the miniaturization, the package 12 uses the through holes (first to third through holes) to conduct the electrodes without forming a castellation.

  Next, each structure of the quartz crystal resonator 10 having the sandwich structure will be described with reference to FIGS. Here, each member configured as a single unit in which the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 are not joined will be described.

  As shown in FIGS. 8 and 9, the quartz diaphragm 2 is a piezoelectric substrate made of quartz, and both principal surfaces (one principal surface 211 and the other principal surface 212) are formed as flat smooth surfaces (mirror finish). ing. An AT-cut quartz plate that performs thickness-shear vibration is used as the quartz plate 2. In the crystal diaphragm 2 shown in FIGS. 8 and 9, both main surfaces 211 and 212 of the crystal diaphragm 2 are XZ ′ planes. In this XZ ′ plane, the direction parallel to the short direction (short side direction) of the crystal diaphragm 2 is the X axis direction, and the direction parallel to the long direction (long side direction) of the crystal diaphragm 2 is the Z ′ axis. It is considered to be a direction. The AT cut is an angle of 35 ° around the X axis with respect to the Z axis among the electric axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis), which are the three crystal axes of artificial quartz. This is a processing method of cutting at an angle inclined by 15 '. In an AT cut quartz plate, the X axis coincides with the crystal axis of the quartz crystal. The Y′-axis and the Z′-axis coincide with the axes tilted by 35 ° 15 ′ from the Y-axis and the Z-axis of the crystal axis of the crystal. The Y′-axis direction and the Z′-axis direction correspond to the cutting direction when cutting the AT-cut quartz plate.

  A pair of excitation electrodes (a first excitation electrode 221 and a second excitation electrode 222) are formed on both main surfaces 211 and 212 of the crystal diaphragm 2. The quartz crystal diaphragm 2 includes a vibrating portion 22 formed in a substantially rectangular shape, an outer frame portion 23 that surrounds the outer periphery of the vibrating portion 22, and a connecting portion (holding portion) 24 that connects the vibrating portion 22 and the outer frame portion 23. The vibration part 22, the connection part 24, and the outer frame part 23 are integrally provided. The connection part 24 is provided only at one place between the vibration part 22 and the outer frame part 23, and the place where the connection part 24 is not provided is a space (gap) 22b. Although not shown, the vibrating portion 22 and the connecting portion 24 are formed thinner than the outer frame portion 23. Due to the difference in thickness between the outer frame portion 23 and the connecting portion 24, the natural frequency of the piezoelectric vibration of the outer frame portion 23 and the connecting portion 24 is different, and the outer frame portion 23 is affected by the piezoelectric vibration of the connecting portion 24. Is less likely to resonate.

  The connecting portion 24 extends (protrudes) from only one corner portion 22a located in the + X direction and the −Z ′ direction of the vibrating portion 22 to the outer frame portion 23 in the −Z ′ direction. Thus, since the connection part 24 is provided in the corner | angular part 22a where the displacement of a piezoelectric vibration is comparatively small among the outer peripheral edge parts of the vibration part 22, the connection part 24 is a part other than the corner | angular part 22a (center of a side). Compared with the case where it is provided in the part), it is possible to suppress the piezoelectric vibration from leaking to the outer frame part 23 via the connecting part 24, and to vibrate the vibration part 22 more efficiently. Further, compared to the case where two or more connecting portions 24 are provided, the stress acting on the vibration portion 22 can be reduced, and the frequency shift of the piezoelectric vibration caused by such stress can be reduced to stabilize the piezoelectric vibration. Can be improved.

  A first excitation electrode 221 is provided on one main surface side of the vibration part 22, and a second excitation electrode 222 is provided on the other main surface side of the vibration part 22. The first excitation electrode 221 and the second excitation electrode 222 are extraction electrodes (first extraction electrode 223, second extraction electrode 224) for connection to external electrode terminals (one external electrode terminal 431, another external electrode terminal 432). Is connected. The first extraction electrode 223 is extracted from the first excitation electrode 221, and is connected to the connection joint pattern 27 formed on the outer frame portion 23 via the connection portion 24. The second extraction electrode 224 is extracted from the second excitation electrode 222 and connected to the connection joint pattern 28 formed on the outer frame portion 23 via the connection portion 24. As described above, the first extraction electrode 223 is formed on one main surface side of the connecting portion 24, and the second extraction electrode 224 is formed on the other main surface side of the connecting portion 24. The first excitation electrode 221 and the first extraction electrode 223 are, for example, a base PVD film formed by physical vapor deposition on one main surface 211 and a physical vapor deposition on the base PVD film to be stacked. Electrode PVD film. The second excitation electrode 222 and the second extraction electrode 224 are formed by, for example, a base PVD film formed by physical vapor deposition on the other main surface 212 and a physical vapor deposition on the base PVD film. Electrode PVD film.

  On both main surfaces 211 and 212 of the crystal diaphragm 2, vibration side sealing portions 25 for joining the crystal diaphragm 2 to the first sealing member 3 and the second sealing member 4 are provided. A vibration side first bonding pattern 251 for bonding to the first sealing member 3 is formed on the vibration side sealing portion 25 of the one main surface 211 of the crystal diaphragm 2. A vibration-side second bonding pattern 252 for bonding to the second sealing member 4 is formed on the vibration-side sealing portion 25 of the other main surface 212 of the crystal diaphragm 2. The vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 are provided on the outer frame portion 23 described above, and are formed in an annular shape in plan view. The vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 are provided so as to be close to the outer peripheral edges of both the main surfaces 211 and 212 of the quartz crystal vibrating plate 2. The pair of first excitation electrode 221 and second excitation electrode 222 of the crystal diaphragm 2 is not electrically connected to the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252.

  The vibration-side first bonding pattern 251 includes, for example, a base PVD film 2511 formed by physical vapor deposition on one main surface 211 and an electrode formed by physical vapor deposition on the base PVD film 2511 and stacked. PVD film 2512. The vibration side second bonding pattern 252 includes, for example, a base PVD film 2521 formed by physical vapor deposition on the other main surface 212 and an electrode formed by physical vapor deposition on the base PVD film 2521 and stacked. It consists of a PVD film 2522. That is, the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 have the same configuration, and a plurality of layers are stacked on the vibration side sealing portion 25 of both main surfaces 211 and 212, A Ti layer (or Cr layer) and an Au layer are formed by vapor deposition from the lowermost layer side. Thus, in the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252, the underlying PVD films 2511 and 2521 are made of a single material (Ti (or Cr)), and the electrode PVD films 2512 and 2522 are formed. The electrode PVD films 2512 and 2522 are made of a single material (Au) and are thicker than the underlying PVD films 2511 and 2521. Further, the first excitation electrode 221 and the vibration-side first bonding pattern 251 formed on the one main surface 211 of the crystal diaphragm 2 have the same thickness, and the first excitation electrode 221 and the vibration-side first bonding pattern 251 have the same thickness. The second excitation electrode 222 and the vibration side second bonding pattern 252 formed on the other main surface 212 of the quartz crystal plate 2 have the same thickness, and the second excitation electrode 222 and the vibration side are made of the same metal. The surface of the second bonding pattern 252 is made of the same metal. The vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 are non-Sn patterns.

  Further, as shown in FIGS. 8 and 9, one through hole (first through hole 26) penetrating between the one main surface 211 and the other main surface 212 is formed in the crystal diaphragm 2. The first through hole 26 is provided in the outer frame portion 23 of the crystal diaphragm 2. The first through hole 26 is connected to the connection bonding pattern 453 of the second sealing member 4.

  As shown in FIGS. 5, 8, and 9, the first through-hole 26 has a through-electrode 261 for conducting the electrodes formed on the one main surface 211 and the other main surface 212. It is formed along the inner wall surface. The central portion of the first through hole 26 becomes a hollow through portion 262 that penetrates between the one main surface 211 and the other main surface 212. Connection joint patterns 264 and 265 are formed on the outer periphery of the first through hole 26. The connection bonding patterns 264 and 265 are provided on both main surfaces 211 and 212 of the crystal diaphragm 2.

  The connection pattern 264 for connection of the first through hole 26 formed on the one main surface 211 of the crystal diaphragm 2 extends along the X-axis direction in the outer frame portion 23. In addition, a connection bonding pattern 27 connected to the first extraction electrode 223 is formed on one main surface 211 of the crystal diaphragm 2, and this connection bonding pattern 27 is also formed in the X direction in the outer frame portion 23. Extending along. The connecting joint pattern 27 is provided on the opposite side of the connecting joint pattern 264 with respect to the Z′-axis direction, with the vibrating portion 22 (first excitation electrode 221) interposed therebetween. That is, the connecting joint patterns 27 and 264 are provided on both sides of the vibrating portion 22 in the Z′-axis direction.

  Similarly, the connection pattern 265 for connection of the first through hole 26 formed on the other main surface 212 of the crystal diaphragm 2 extends along the X-axis direction in the outer frame portion 23. In addition, a connection bonding pattern 28 connected to the second extraction electrode 224 is formed on the other main surface 212 of the crystal diaphragm 2, and this connection bonding pattern 28 is also formed in the outer frame portion 23 in the X-axis direction. Extending along. The connection bonding pattern 28 is provided on the opposite side of the connection bonding pattern 265 with respect to the Z′-axis direction, with the vibrating portion 22 (second excitation electrode 222) interposed therebetween. That is, the connecting joint patterns 28 and 265 are provided on both sides of the vibrating portion 22 in the Z′-axis direction.

  The connection bonding patterns 27, 28, 264, and 265 have the same configuration as the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252, and the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252. Can be formed by the same process. Specifically, the connection bonding patterns 27, 28, 264, and 265 include, for example, a base PVD film formed by physical vapor deposition on both main surfaces 211 and 212 of the crystal diaphragm 2, and the base PVD. The electrode PVD film is formed by physical vapor deposition on the film.

  In the crystal unit 10, the first through-hole 26 and the connecting bonding patterns 27, 28, 264, and 265 are formed inside the inner space 13 (inside the inner peripheral surfaces of the bonding materials 11a and 11b) in plan view. The The internal space 13 is formed inward (inner side) of the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 in plan view. The inner side of the internal space 13 means strictly inside the inner peripheral surfaces of the bonding materials 11a and 11b without including the bonding materials 11a and 11b described later. The first through hole 26 and the connecting bonding patterns 27, 28, 264, 265 are not electrically connected to the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252.

  As shown in FIGS. 6 and 7, the first sealing member 3 is a substantially rectangular parallelepiped substrate made of crystal, and is joined to the other main surface 312 (the crystal vibrating plate 2) of the first sealing member 3. Surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, an AT-cut quartz plate similar to the above-described quartz diaphragm 2 is used as the first sealing member 3.

  The other main surface 312 of the first sealing member 3 is provided with a sealing-side first sealing portion 32 for joining to the crystal diaphragm 2. The sealing side first sealing portion 32 is formed with a sealing side first bonding pattern 321 for bonding to the crystal vibrating plate 2. The sealing side first bonding pattern 321 is formed in an annular shape in plan view. The sealing-side first bonding pattern 321 is provided so as to be close to the outer peripheral edge of the other main surface 312 of the first sealing member 3. The sealing side first bonding pattern 321 has the same width at all positions on the sealing side first sealing portion 32 of the first sealing member 3.

  The sealing-side first bonding pattern 321 includes, for example, a base PVD film 3211 formed by physical vapor deposition on the first sealing member 3 and a physical vapor deposition on the base PVD film 3211 and stacked. The electrode PVD film 3212 is formed. Note that Ti (or Cr) is used for the base PVD film 3211 and Au is used for the electrode PVD film 3212. Moreover, the sealing side 1st joining pattern 321 is a non-Sn pattern. Specifically, the sealing side first bonding pattern 321 is configured by laminating a plurality of layers on the sealing side first sealing portion 32 of the other main surface 312, and the Ti layer (or from the lowermost layer side). Cr layer) and Au layer are formed by vapor deposition.

  On the other main surface 312 of the first sealing member 3, that is, on the surface facing the crystal diaphragm 2, connection joint patterns 35 and 36 to be joined to the connection joint patterns 264 and 27 of the crystal diaphragm 2 are formed. Has been. The connecting joint patterns 35 and 36 extend along the direction in the short side direction (X-axis direction in FIG. 7) of the first sealing member 3. The connection bonding patterns 35 and 36 are provided at a predetermined interval in the long side direction (Z′-axis direction in FIG. 7) of the first sealing member 3, and Z ′ of the connection bonding patterns 35 and 36. The interval in the axial direction is substantially the same as the interval in the Z′-axis direction of the connection pattern 264, 27 for connection of the crystal diaphragm 2 (see FIG. 8). The connection bonding patterns 35 and 36 are connected to each other through the wiring pattern 33. The wiring pattern 33 is provided between the connection bonding patterns 35 and 36. The wiring pattern 33 extends along the Z′-axis direction. The wiring pattern 33 is not bonded to the connection bonding patterns 264 and 27 of the crystal diaphragm 2.

  The connection bonding patterns 35 and 36 and the wiring pattern 33 have the same configuration as the sealing-side first bonding pattern 321, and can be formed by the same process as the sealing-side first bonding pattern 321. Specifically, the connecting bonding patterns 35 and 36 and the wiring pattern 33 are, for example, a base PVD film formed by physical vapor deposition on the other main surface 312 of the first sealing member 3, and the base PVD. The electrode PVD film is formed by physical vapor deposition on the film.

  In the crystal unit 10, the connecting bonding patterns 35 and 36 and the wiring pattern 33 are formed in the inner space 13 (inside the inner peripheral surfaces of the bonding materials 11a and 11b) in plan view. The connection bonding patterns 35 and 36 and the wiring pattern 33 are not electrically connected to the sealing-side first bonding pattern 321.

  As shown in FIGS. 10 and 11, the second sealing member 4 is a substantially rectangular parallelepiped substrate made of crystal, and is joined to one main surface 411 of the second sealing member 4 (to be bonded to the crystal diaphragm 2). Surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, an AT-cut quartz plate similar to the above-described quartz diaphragm 2 is used as the second sealing member 4.

  The main surface 411 of the second sealing member 4 is provided with a sealing-side second sealing portion 42 for bonding to the crystal diaphragm 2. The sealing-side second sealing part 42 is formed with a sealing-side second bonding pattern 421 for bonding to the crystal vibrating plate 2. The sealing-side second bonding pattern 421 is formed in an annular shape in plan view. The sealing-side second bonding pattern 421 is provided so as to be close to the outer peripheral edge of the one main surface 411 of the second sealing member 4. The sealing side second bonding pattern 421 has the same width at all positions on the sealing side second sealing portion 42 of the second sealing member 4.

  For example, the sealing-side second bonding pattern 421 includes a base PVD film 4211 formed by physical vapor deposition on the second sealing member 4 and a physical vapor deposition on the base PVD film 4211 and stacked. The electrode PVD film 4212 is formed. Note that Ti (or Cr) is used for the base PVD film 4211 and Au is used for the electrode PVD film 4212. Further, the sealing-side second bonding pattern 421 is a non-Sn pattern. Specifically, the sealing-side second bonding pattern 421 is configured by laminating a plurality of layers on the sealing-side second sealing portion 42 of the other main surface 412, and Ti layer (or from the lowermost layer side) Cr layer) and Au layer are formed by vapor deposition.

  In addition, a pair of external electrode terminals (one external electrode terminal 431, etc.) electrically connected to the outside are provided on the other main surface 412 of the second sealing member 4 (an outer main surface not facing the crystal diaphragm 2). An external electrode terminal 432) is provided. The one external electrode terminal 431 and the other external electrode terminal 432 are located at both ends in the longitudinal direction of the other main surface 412 of the second sealing member 4 as shown in FIGS. The pair of external electrode terminals (one external electrode terminal 431 and another external electrode terminal 432) are, for example, a base PVD film 4311 and 4321 formed by physical vapor deposition on the other main surface 412 and a base PVD film 4311. , 4321, and electrode PVD films 4312 and 4322 formed by physical vapor deposition. The one external electrode terminal 431 and the other external electrode terminal 432 occupy one-third or more of the other main surface 412 of the second sealing member 4.

  As shown in FIGS. 5, 10, and 11, the second sealing member 4 has two through holes (second through hole 45, third through hole) that penetrate between the one main surface 411 and the other main surface 412. 46) is formed. The second through hole 45 is connected to one external electrode terminal 431 and the connection pattern 265 for connection of the crystal diaphragm 2. The third through hole 46 is connected to the other external electrode terminal 432 and the connection pattern 28 for connection of the crystal diaphragm 2.

  As shown in FIGS. 5, 10, and 11, the second through hole 45 and the third through hole 46 have through electrodes 451 and 451 for conducting the electrodes formed on the one main surface 411 and the other main surface 412. 461 is formed along the inner wall surfaces of the second through hole 45 and the third through hole 46, respectively. Central portions of the second through hole 45 and the third through hole 46 are hollow through portions 452 and 462 that penetrate between the one main surface 411 and the other main surface 412. Connection joint patterns 453 and 463 are formed on the outer periphery of each of the second through hole 45 and the third through hole 46.

  The connection bonding patterns 453 and 463 are provided on one main surface 411 of the second sealing member 4 and are bonded to the connection bonding patterns 265 and 28 of the crystal diaphragm 2. The connecting bonding patterns 453 and 463 extend along the direction in the short side direction (X-axis direction in FIG. 10) of the second sealing member 4. The connection bonding patterns 453 and 463 are provided at a predetermined interval in the long side direction (Z′-axis direction in FIG. 10) of the second sealing member 4, and the Z ′ of the connection bonding patterns 453 and 463 is provided. The interval in the axial direction is substantially the same as the interval in the Z′-axis direction of the connection pattern 265, 28 for connection of the crystal diaphragm 2 (see FIG. 9).

  The connection bonding patterns 453 and 463 have the same configuration as the sealing-side second bonding pattern 421 and can be formed by the same process as the sealing-side second bonding pattern 421. Specifically, the connecting bonding patterns 453 and 463 are, for example, a base PVD film formed by physical vapor deposition on one main surface 411 of the second sealing member 4 and a physical layer on the base PVD film. The electrode PVD film is formed by the chemical vapor deposition.

  In the crystal unit 10, the second through hole 45, the third through hole 46, and the connection bonding patterns 453 and 463 are formed in the inner space 13 in plan view. The second through hole 45, the third through hole 46, and the connecting joint patterns 453 and 463 are not electrically connected to the sealing-side second joint pattern 421. In addition, the one external electrode terminal 431 and the other external electrode terminal 432 are not electrically connected to the sealing-side second bonding pattern 421.

  In the crystal resonator 10 including the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 having the above-described configuration, the crystal diaphragm 2 and the first sealing member 3 are the vibration side first bonding pattern 251. In addition, diffusion bonding is performed in a state where the sealing-side first bonding pattern 321 is overlapped, and the crystal diaphragm 2 and the second sealing member 4 overlap the vibration-side second bonding pattern 252 and the sealing-side second bonding pattern 421. The sandwiched package 12 shown in FIG. 5 is manufactured by diffusion bonding in the combined state. Thereby, the internal space 13 of the package 12, that is, the accommodation space of the vibration part 22 is hermetically sealed.

  The vibration-side first bonding pattern 251 and the sealing-side first bonding pattern 321 itself become the bonding material 11a (see FIG. 5) generated after diffusion bonding, and the crystal vibrating plate 2 and the first sealing are formed by the bonding material 11a. The member 3 is joined. The vibration side second bonding pattern 252 and the sealing side second bonding pattern 421 itself become a bonding material 11b generated after diffusion bonding, and the crystal vibrating plate 2 and the second sealing member 4 are bonded by the bonding material 11b. . The bonding materials 11a and 11b are formed in an annular shape in a plan view and are provided at positions that substantially coincide with each other in a plan view. That is, it is provided at a position where the inner peripheral edges of the bonding materials 11a and 11b substantially match, and is provided at a position where the outer peripheral edges of the bonding materials 11a and 11b substantially match.

  The wiring from the first and second excitation electrodes 221 and 222 of the quartz crystal diaphragm 2 to the one external electrode terminal 431 and the other external electrode terminal 432 is all of the bonding materials 11a and 11b as sealing portions in plan view. Is provided. The bonding materials 11 a and 11 b are formed so that the outer edge shape and the inner edge shape are substantially rectangular in plan view, and are close to the outer peripheral edge of the package 12. Thereby, the size of the vibration part 22 of the crystal diaphragm 2 can be increased. The distance between the inner peripheral edge of the bonding materials 11a and 11b and the space 22b between the vibration part 22 and the outer frame part 23 is larger on the short side of the package 12 than on the long side.

  At this time, diffusion bonding is performed in a state where the above-described bonding patterns for connection are also superimposed. Specifically, the connection bonding pattern 264 of the crystal diaphragm 2 and the connection bonding pattern 35 of the first sealing member 3 are diffusion bonded. The connection bonding pattern 27 of the crystal diaphragm 2 and the connection bonding pattern 36 of the first sealing member 3 are diffusion bonded. In addition, the connection bonding pattern 265 of the crystal diaphragm 2 and the connection bonding pattern 453 of the second sealing member 4 are diffusion bonded. The connection bonding pattern 28 of the crystal diaphragm 2 and the connection bonding pattern 463 of the second sealing member 4 are diffusion bonded.

  Then, the connection bonding pattern 264 and the connection bonding pattern 35 themselves become a bonding material 14a (see FIG. 5) generated after diffusion bonding, and the crystal vibrating plate 2 and the first sealing member 3 are bonded by the bonding material 14a. Is done. The connection bonding pattern 27 and the connection bonding pattern 36 themselves become the bonding material 14b generated after the diffusion bonding, and the crystal vibrating plate 2 and the first sealing member 3 are bonded by the bonding material 14b. Further, the connection bonding pattern 265 and the connection bonding pattern 453 themselves become the bonding material 14c generated after diffusion bonding, and the crystal vibrating plate 2 and the second sealing member 4 are bonded by the bonding material 14c. The connection bonding pattern 28 and the connection bonding pattern 463 themselves become the bonding material 14d generated after diffusion bonding, and the crystal vibrating plate 2 and the second sealing member 4 are bonded by the bonding material 14d. These bonding materials 14a to 14d serve to conduct the through electrodes of the through holes and the bonding materials 14a to 14d, and serve to hermetically seal the bonding portions. In addition, since bonding material 14a-14d is provided inward rather than bonding material 11a, 11b as a sealing part by planar view, it has shown with the broken line in FIG.

-Manufacturing method of quartz crystal device-
Next, a manufacturing method of the crystal resonator device according to the present embodiment will be described with reference to FIGS. Here, a method for manufacturing the above-described crystal resonator 10 (see FIGS. 5 to 11) will be described as an example of a method for manufacturing a crystal resonator device.

  As shown in FIG. 1, the manufacturing method of the crystal unit 10 according to the present embodiment includes a first sealing member wafer formed in the first sealing member wafer forming step (ST11), and a crystal diaphragm. 2 by laminating the quartz diaphragm wafer formed in the wafer forming step (ST12) and the second sealing member wafer formed in the second sealing member wafer forming step (ST13). And a laminating step (ST14) for forming a crystal wafer (wafer laminate) 100 as shown in FIG. 5 and an individualizing step (ST15) for separating the package 12 of the crystal resonator 10 from the crystal wafer 100. . The order of the first sealing member wafer forming step, the crystal vibrating plate wafer forming step, and the second sealing member wafer forming step is not particularly limited. The first sealing member wafer forming step, the crystal vibrating plate wafer forming step, and the second sealing member wafer forming step may be performed in parallel.

  Here, the crystal wafer 100 will be described with reference to FIGS. As shown in FIG. 4, the quartz wafer 100 is configured as a laminated body in which a first sealing member wafer 100B, a quartz diaphragm wafer 100A, and a second sealing member wafer 100C are laminated. .

  As shown in FIG. 2, the crystal wafer 100 has a configuration in which a plurality of packages 12 of the crystal resonator 10 are assembled. In the example of FIG. 2, a plurality of packages 12 formed in a substantially rectangular shape in plan view are arranged in a matrix on the quartz wafer 100, and the vertical direction (X-axis direction in FIG. 2) and the horizontal direction (Z in FIG. 2). Eight packages 12 are arranged in the 'axis direction), and a total of 64 packages 12 are provided. The number of packages 12 is an example, and is not limited to the above number.

  The crystal wafer 100 includes a support part (crosspiece part) 101 for supporting a plurality of packages 12. The support part 101 extends along the Z′-axis direction of the crystal wafer 100. Both end portions of the support portion 101 are integrally connected to a frame portion (outer frame portion) 102 of the crystal wafer 100. A plurality of support parts 101 (eight in FIG. 2) are provided at a predetermined interval in the X-axis direction of the quartz wafer 100. The frame portion 102 is a substantially rectangular frame body with one side open in a plan view, and is formed in a substantially “U” shape. A support portion 101 is provided at a position corresponding to one open side of the frame portion 102, and an annular frame is integrally formed by the support portion 101 and the frame portion 102.

  A plurality of (eight in FIG. 2) packages 12 are supported on the support portion 101. The packages 12 are arranged at a predetermined interval in the Z′-axis direction of the crystal wafer 100. The support part 101 is provided on one side of the package 12 in plan view. In the present embodiment, the support portion 101 is provided on one long side (the + X direction side in FIG. 2) of the package 12.

  The package 12 is connected to the support part 101 via a connecting part (breaking part). The connecting portion includes first and second connecting portions 131 and 132 provided at a predetermined interval in the Z′-axis direction of the crystal wafer 100. The first and second connecting portions 131 and 132 extend from one long side 12a of the package 12 to the support portion 101 in plan view. That is, one end side (the −X direction side in FIG. 2) of the first and second connection portions 131 and 132 is connected to one long side of the package 12, and the other end side of the first and second connection portions 131 and 132. (+ X direction side in FIG. 2) is connected to the support portion 101. The package 12 is supported on the support portion 101 of the crystal wafer 100 only by the first and second coupling portions 131 and 132. That is, in plan view, the outer peripheral edge of the package 12 faces the space (gap) except for the portion where the first and second connecting portions 131 and 132 are connected.

  The first and second connecting portions 131 and 132 have the same configuration, and with respect to a straight line passing through the center of the package 12 and perpendicular to the long side 12a of the package 12 (for example, a straight line L1 described later) in plan view. The shape is substantially line symmetrical. Hereinafter, the first connecting part 131 will be described as a representative, and the description of the second connecting part 132 will be omitted.

  As shown in FIG. 3, the first connecting portion 131 has a width (Z′-axis direction width) W11 of the end portion 131a on the support portion 101 side, and a width (Z) of the end portion 131b on the long side 12a side of the package 12. 'Width in the axial direction) is greater than W12 (W11> W12). Out of the end edges (end sides) 131c and 131d of the first connecting portion 131, the outer end edge 131c, that is, the end far from the center position 12c of the long side 12a of the package 12 (the −Z ′ direction side in FIG. 3). The edge is connected to a corner (vertex) 12e of the package 12 in plan view. Then, at the outer end edge 131c of the first connecting portion 131, the end edge 131e on the support portion 101 side is outside in the plan view than the end edge 131f on the long side 12a side of the package 12 (the −Z ′ direction in FIG. 3). Protruding toward the side). In other words, the end edge 131e on the support portion 101 side is provided at a position farther from the straight line L1 passing through the center position 12c and perpendicular to the long side 12a than the end edge 131f on the long side 12a side of the package 12 in plan view. ing. The distance W13 between the end edge 131e on the support portion 101 side and the straight line L1 is larger than the distance W14 between the end edge 131f on the long side 12a side and the straight line L1 (W13> W14).

  In the present embodiment, the outer end edge 131c of the first connecting portion 131 is provided along a straight line that is inclined with respect to the straight line L1. Specifically, the outer edge 131c is provided along a straight line L2 passing through the center position 12d of the other long side 12b of the package 12 in plan view. In this case, the straight line L2 is a straight line that passes through the center position 12d of the other long side 12b of the package 12 and the corner 12e of the package 12 described above. In the first connecting portion 131, a portion that protrudes to the outer side (the −Z ′ direction side in FIG. 3) from the straight line that extends the short side of the package 12 toward the support portion 101 is formed in a substantially triangular shape. The entire outer edge 131c may be formed along the straight line L2, but the portion on the support portion 101 side of the outer edge 131c may be formed in a curved shape.

  The inner edge 131d of the first connecting portion 131, that is, the edge near the center position 12c of the long side 12a of the package 12 (+ Z ′ direction side in FIG. 3) is the edge 131g on the support portion 101 side. It protrudes toward the inner side (+ Z ′ direction side in FIG. 3) from the end 131h on the long side 12a side of the package 12 in a plan view. In other words, the end edge 131g on the support portion 101 side is provided closer to the straight line L1 in plan view than the end edge 131h on the long side 12a side of the package 12. A distance W15 between the edge 131g on the support portion 101 side and the straight line L1 is smaller than a distance W16 between the end edge 131h on the long side 12a side and the straight line L1 (W15 <W16).

  In the present embodiment, the inner end edge 131d of the first connecting portion 131 is formed in a curved shape. Specifically, in the inner end edge 131d, a corner is provided in a portion between the end edge 131g on the support portion 101 side and the end edge 131h on the long side 12a side, in other words, a portion other than both end portions. There is no shape (shape without corners). In this case, the inner end edge 131d is a part of an arc having a center on the straight line L1. In the connection portion 12f between the inner end edge 131d and the long side 12a of the package 12, the angle θ1 formed by the tangent line of the inner end edge 131d and the long side 12a of the package 12 is preferably less than 90 degrees. The inner end edge 131d may be linear (for example, a shape symmetrical to the outer end edge 131c), or may have a waveform shape in which a plurality of arcs are combined.

  Further, a groove (concave portion) 133 is formed at the end 131 b of the first connecting portion 131 on the package 12 side. The groove 133 is provided along the long side 12 a of the package 12. That is, the groove 133 extends along the Z′-axis direction of the crystal wafer 100. The groove 133 extends from the connecting portion 12f between the inner edge 131d and the long side 12a of the package 12 toward the corner 12e of the package 12 (toward the −Z ′ direction in FIG. 3). In the present embodiment, the groove 133 does not reach the corner 12e of the package 12, and the groove 133 is provided at a distance from the corner 12e of the package 12. That is, the groove 133 does not reach the corner 12e of the package 12, and the vicinity of the corner 12e of the package 12 is a portion where no groove is formed. Note that the groove 133 may reach the corner 12e of the package 12.

  As described above, the quartz wafer 100 has a configuration in which the first sealing member wafer 100B, the quartz diaphragm wafer 100A, and the second sealing member wafer 100C are stacked (see FIG. 4). ). The crystal diaphragm wafer 100A, the first sealing member wafer 100B, and the second sealing member wafer 100C have the same shape as the above-described crystal wafer 100 (see FIG. 2) in plan view.

  As shown in FIG. 4, the crystal diaphragm wafer 100A has a configuration in which a plurality of the above-described crystal diaphragms 2 (see FIGS. 8 and 9) are assembled. In the example of FIG. 4, a plurality of crystal diaphragms 2 are arranged in a matrix in the crystal diaphragm wafer 100 </ b> A, and the vertical direction (X-axis direction in FIG. 4) and the horizontal direction (Z′-axis direction in FIG. 4). ), Eight crystal diaphragms 2 are arranged, and a total of 64 crystal diaphragms 2 are provided. In the quartz vibrating plate wafer 100A, similarly to the quartz wafer 100 described above, the quartz vibrating plate 2 is supported by the support portion 101A by the first and second connecting portions 131A and 132A. Both end portions of the support portion 101A are integrally connected to the frame portion 102A. Groove parts (slits) 133A and 133A are formed at the ends of the first and second connecting parts 131A and 132A on the quartz diaphragm 2 side. The groove parts 133A and 133A are preferably formed on both surfaces of the crystal vibration plate wafer 100A, but may be formed on at least one surface. Each crystal diaphragm 2 of the crystal diaphragm wafer 100A has the above-described vibration part 22, outer frame part 23, first excitation electrode 221, second excitation electrode 222, vibration side first bonding pattern 251 and vibration. The side second bonding pattern 252 and the first through hole 26 are formed, but are not shown in FIG.

  As shown in FIG. 4, the first sealing member wafer 100 </ b> B has a configuration in which a plurality of the above-described first sealing members 3 (see FIGS. 6 and 7) are assembled. In the example of FIG. 4, in the first sealing member wafer 100 </ b> B, a plurality of first sealing members 3 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 4) and the horizontal direction (FIG. 4). Eight first sealing members 3 are arranged in the Z′-axis direction), and a total of 64 first sealing members 3 are provided. In the first sealing member wafer 100B, as in the case of the quartz wafer 100 described above, the first sealing member 3 is supported by the support portion 101B by the first and second connecting portions 131B and 132B. Yes. Both end portions of the support portion 101B are integrally connected to the frame portion 102B. Grooves 133B and 133B are formed at the ends of the first and second connecting portions 131B and 132B on the first sealing member 3 side. The grooves 133B and 133B are preferably formed on both surfaces of the first sealing member wafer 100B, but may be formed on at least one surface. The first sealing member 3 of the first sealing member wafer 100B is formed with the sealing-side first bonding pattern 321, the wiring pattern 33, the connecting bonding patterns 35 and 36, and the like. In FIG. 4, the illustration is omitted.

  As shown in FIG. 4, the second sealing member wafer 100 </ b> C has a configuration in which a plurality of the above-described second sealing members 4 (see FIGS. 10 and 11) are assembled. In the example of FIG. 4, in the second sealing member wafer 100 </ b> C, a plurality of second sealing members 4 are arranged in a matrix, and the vertical direction (X-axis direction in FIG. 4) and the horizontal direction (FIG. 4). Eight second sealing members 4 are arranged in the Z′-axis direction), and a total of 64 second sealing members 4 are provided. In the second sealing member wafer 100C, the second sealing member 4 is supported by the support portion 101C by the first and second connecting portions 131C and 132C, as in the case of the crystal wafer 100 described above. Yes. Both end portions of the support portion 101C are integrally connected to the frame portion 102C. Grooves 133C and 133C are formed at the ends of the first and second connecting portions 131C and 132C on the second sealing member 4 side. The grooves 133C and 133C are preferably formed on both surfaces of the second sealing member wafer 100C, but may be formed on at least one surface. The second sealing member 4 of the second sealing member wafer 100C includes the above-described sealing-side second bonding pattern 421, one external electrode terminal 431, another external electrode terminal 432, the second through hole 45, Although the third through hole 46 and the like are formed, the illustration is omitted in FIG.

  Then, the first sealing member wafer 100B and the second sealing member wafer 100C are laminated and bonded via the quartz vibrating plate wafer 100A, so that a quartz crystal having a sandwich structure as shown in FIG. A quartz wafer 100 in which a plurality of packages 12 of the vibrator 10 are assembled is formed. In this case, the first and second connecting portions 131 and 132 of the quartz wafer 100 are the first and second connecting portions 131B and 132B of the first sealing member wafer 100B and the first and second connecting portions 131B and 132B of the quartz vibrating plate wafer 100A. The second connecting portions 131A and 132A and the first and second connecting portions 131C and 132C of the second sealing member wafer 100C are stacked. The first and second connecting portions 131B and 132B of the first sealing member wafer 100B, the first and second connecting portions 131A and 132A of the quartz vibrating plate wafer 100A, and the first of the second sealing member wafer 100C. The second connecting portions 131C and 132C have the same configuration as the first and second connecting portions 131 and 132 of the crystal wafer 100 described above (see FIG. 3). The first and second connecting portions 131B and 132B of the first sealing member wafer 100B, the first and second connecting portions 131A and 132A of the quartz vibrating plate wafer 100A, and the first of the second sealing member wafer 100C. The second connecting portions 131C and 132C are provided at positions that substantially coincide with each other in plan view.

  Further, the groove portions 133 and 133 of the crystal wafer 100 are groove portions 133B and 133B formed on at least one surface of the first sealing member wafer 100B, and groove portions 133A and 133A formed on at least one surface of the crystal vibration wafer 100A, The second sealing member wafer 100C includes grooves 133C and 133C formed on at least one surface. The groove portions 133B and 133B of the first sealing member wafer 100B, the groove portions 133A and 133A of the quartz vibration plate wafer 100A, and the groove portions 133C and 133C of the second sealing member wafer 100C are the groove portions 133 of the quartz wafer 100 described above. , 133.

  Next, each process of the manufacturing method of the crystal resonator 10 illustrated in FIG. 1 will be described.

  The first sealing member wafer forming step (ST11) is a step of forming a first sealing member wafer 100B as shown in FIG. As described above, the first sealing member wafer 100B has a configuration in which a plurality of first sealing members 3 having a substantially rectangular shape in plan view are assembled. However, the first sealing member 3 is connected to a support portion 101B provided on one side of the first sealing member 3 in a plan view through the first and second connection portions 131B and 132B. It has a configuration.

  In the first sealing member wafer forming step, for example, wet etching is performed on the quartz base plate (AT-cut quartz plate) to thereby form the first sealing member 3 and the support portion of the first sealing member wafer 100B. 101B, frame portion 102B, first and second connecting portions 131B and 132B, and groove portions 133B and 133B are formed. Further, in each first sealing member 3, for example, a PVD method such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography) is used as a base PVD. By forming the film and the electrode PVD film, the sealing-side first bonding pattern 321, the connecting bonding patterns 35 and 36, and the wiring pattern 33 are formed. Here, the sealing-side first bonding pattern 321, the connecting bonding patterns 35 and 36, and the wiring pattern 33 on the other main surface 312 of each first sealing member 3 can have the same configuration. The sealing-side first bonding pattern 321, the connecting bonding patterns 35 and 36, and the wiring pattern 33 can be collectively formed by the same process.

  The crystal diaphragm wafer forming step (ST12) is a process of forming a crystal diaphragm wafer 100A as shown in FIG. As described above, the crystal diaphragm wafer 100A has a configuration in which a plurality of crystal diaphragms 2 having a substantially rectangular shape in plan view are assembled. Specifically, each crystal diaphragm 2 has a crystal structure in plan view. The vibration plate 2 is connected to a support portion 101A provided on one side of the vibration plate 2 so as to be separated from the crystal vibration plate 2 via first and second connection portions 131A and 132A.

  In the crystal vibrating plate wafer forming step, for example, wet etching is performed on the crystal base plate (AT-cut crystal plate) to thereby form each crystal vibrating plate 2, the supporting portion 101A, the frame portion 102A of the quartz vibrating plate wafer 100A, First and second connecting portions 131A and 132A and groove portions 133A and 133A are formed. In each quartz-crystal diaphragm 2, the space 22b between the vibration part 22 and the outer frame part 23 and the 1st through-hole 26 are formed by performing wet etching, for example.

  Further, in each crystal diaphragm 2, for example, a PVD film such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography) or the like By forming the electrode PVD film, the first excitation electrode 221, the second excitation electrode 222, the first extraction electrode 223, the second extraction electrode 224, the vibration side first bonding pattern 251, the vibration side second bonding pattern 252, and Connection joint patterns 27, 28, 264, and 265 are formed. Here, the first excitation electrode 221, the first extraction electrode 223, the vibration-side first bonding pattern 251, and the connection bonding patterns 27 and 264 on the main surface 211 of each crystal diaphragm 2 may have the same configuration. In this case, the first excitation electrode 221, the first extraction electrode 223, the vibration-side first bonding pattern 251, and the connection bonding patterns 27 and 264 can be collectively formed by the same process. Similarly, the second excitation electrode 222, the second extraction electrode 224, the vibration-side second bonding pattern 252 and the connection bonding patterns 28 and 265 on the other main surface 212 of each crystal diaphragm 2 may have the same configuration. In this case, the second excitation electrode 222, the second extraction electrode 224, the vibration side second bonding pattern 252 and the connection bonding patterns 28 and 265 can be formed in a lump by the same process.

  The second sealing member wafer forming step (ST13) is a step of forming a second sealing member wafer 100C as shown in FIG. As described above, the second sealing member wafer 100 </ b> C has a configuration in which a plurality of second sealing members 4 having a substantially rectangular shape in a plan view are assembled. Is connected to a support portion 101C provided on one side of the second sealing member 4 in a plan view and spaced apart from the second sealing member 4 via the first and second connecting portions 131C and 132C. It has a configuration.

  In the second sealing member wafer forming step, for example, wet etching is performed on the quartz base plate (AT-cut quartz plate) to thereby form each second sealing member 4 and support portion of the second sealing member wafer 100C. 101C, the frame part 102C, the first and second connecting parts 131C and 132C, and the groove parts 133C and 133C are formed. In each second sealing member 4, for example, the second through hole 45 and the third through hole 46 are formed by performing wet etching.

  In each second sealing member 4, for example, a base PVD is formed by a PVD method such as vacuum deposition, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography). By forming the film or the electrode PVD film, the sealing-side second bonding pattern 421, one external electrode terminal 431, another external electrode terminal 432, and connection bonding patterns 453 and 463 are formed. Here, the sealing-side second bonding pattern 421 and the connection bonding patterns 453 and 463 of the first main surface 411 of each second sealing member 4 can be configured in the same manner, and in this case, in the same process The sealing-side second bonding pattern 421 and the connecting bonding patterns 453 and 463 can be formed in a lump.

  In the stacking step (ST14), the first sealing member wafer 100B formed in the first sealing member wafer forming step (ST11) and the quartz crystal vibrating plate formed in the quartz vibrating plate wafer forming step (ST12). In this step, the crystal wafer 100 is formed by laminating the wafer for wafer 100A and the wafer for second sealing member 100C formed in the second sealing member wafer forming step (ST13). That is, in the stacking step, each first sealing member 3 of the first sealing member wafer 100B, each crystal vibrating plate 2 of the crystal vibrating plate wafer 100A, and each second of the second sealing member wafer 100C. The sealing member 4 is laminated.

  Specifically, the vibration-side first bonding pattern 251 of each quartz-crystal diaphragm 2 of the quartz-crystal diaphragm wafer 100A and the sealing-side first bonding of each first sealing member 3 of the first sealing member wafer 100B. Diffusion bonding is performed in a state where the pattern 321 is overlapped, and the vibration-side second bonding pattern 252 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and each second sealing member of the second sealing member wafer 100C. The four sealing-side second bonding patterns 421 are diffusion bonded in a superposed state.

  Further, the connection bonding pattern 264 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 35 of each first sealing member 3 of the first sealing member wafer 100B are diffusion bonded. The connection bonding pattern 27 of each crystal vibration plate 2 of the crystal vibration wafer 100A and the connection bonding pattern 36 of each first sealing member 3 of the first sealing member wafer 100B are diffusion bonded. The connection bonding pattern 265 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 453 of each second sealing member 4 of the second sealing member wafer 100C are diffusion bonded. The connection bonding pattern 28 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 463 of each second sealing member 4 of the second sealing member wafer 100C are diffusion bonded.

  In the laminating step, each first sealing member 3 of the first sealing member wafer 100B and each crystal vibration plate 2 of the crystal vibration plate wafer 100A are joined, and then each of the crystal vibration plate wafers 100A is joined. The crystal diaphragm 2 and each second sealing member 4 of the second sealing member wafer 100C may be joined, or each crystal diaphragm 2 of the crystal diaphragm wafer 100A and the second sealing member 4 After joining each second sealing member 4 of the stopper member wafer 100C, each first sealing member 3 of the first sealing member wafer 100B, and each crystal diaphragm 2 of the crystal diaphragm wafer 100A, May be joined.

  Through the above-described stacking process, a crystal wafer 100 in which a plurality of packages 12 of substantially rectangular parallelepiped crystal resonators 10 are assembled is formed. In each package 12, the first sealing member 3 and the crystal diaphragm 2 have a gap of 1.00 μm or less, and the second sealing member 4 and the crystal diaphragm 2 have a gap of 1.00 μm or less. Have. That is, the thickness of the bonding material 11 between the first sealing member 3 and the crystal vibrating plate 2 is 1.00 μm or less, and the bonding material 11 between the second sealing member 4 and the crystal vibrating plate 2 The thickness is 1.00 μm or less (specifically, 0.15 μm to 1.00 μm in the Au—Au bonding of the present embodiment). For comparison, a conventional metal paste sealing material using Sn has a thickness of 5 μm to 20 μm.

  In the crystal wafer 100 after the stacking process, the first connection portions 131B of the first sealing members 3 of the first sealing member wafer 100B and the first connection portions of the crystal vibration plates 2 of the crystal vibration plate wafer 100A. 131A and the first connecting portion 131C of each second sealing member 4 of the second sealing member wafer 100C are provided at substantially the same position in plan view. The second connecting portion 132B of each first sealing member 3 of the first sealing member wafer 100B, the second connecting portion 132A of each crystal vibrating plate 2 of the crystal vibrating wafer 100A, and the second sealing member The second connecting portion 132C of each second sealing member 4 of the wafer 100C is provided at a position that substantially coincides with the plan view.

  In the singulation step (ST15), the first sealing member 3 of each package 12 of the crystal wafer 100 is pressed by, for example, a rod-shaped pressing member, whereby each package 12 is folded (separated) from the crystal wafer 100. The package 12 is separated into pieces. At this time, it is preferable to press a portion of the package 12 (first sealing member 3) opposite to the portion where the first and second connecting portions 131 and 132 are provided. Specifically, it is preferable to press the center position 12d (see FIG. 3) of the other long side 12b of the package 12.

  According to the present embodiment, in the individualization step, each package 12 can be easily separated into individual pieces from the crystal wafer 100 in which a plurality of packages 12 of the crystal unit 10 are assembled. Hereinafter, this point will be described.

  In the singulation process, the package 12 is separated into pieces by pressing a portion of the quartz wafer 100 opposite to the portion where the first and second connecting portions 131 and 132 of the package 12 are provided. It has become. At this time, the first and second connecting portions 131A, 132A, 131B, 132B, 131C, and 132C are provided on the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4 of each package 12, respectively. Therefore, the quartz diaphragm 2, the first sealing member 3, and the second sealing member 4 can be easily separated at the first and second connecting portions 131A, 132A, 131B, 132B, 131C, and 132C. Can do. Specifically, the crystal diaphragm 2 is connected to the first and second connecting portions 131A and 132A of the crystal diaphragm wafer 100A and the crystal diaphragm 2 at one of the long sides of the crystal diaphragm 2. The first and second connecting portions 131A and 132A can be separated. Similarly, at the connection place between the first and second connecting portions 131B and 132B of the first sealing member wafer 100B and the first sealing member 3, that is, at one long side of the first sealing member 3, The 1 sealing member 3 and the 1st, 2nd connection part 131B, 132B can be isolate | separated. In the second sealing member wafer 100 </ b> C, the second sealing portion 4 </ b> C is connected to the first sealing portions 131 </ b> C and 132 </ b> C and the second sealing member 4, that is, at one long side of the second sealing member 4. The member 4 and the first and second connecting portions 131C and 132C can be separated. Therefore, each package 12 can be easily separated from the quartz wafer 100 by folding.

  Further, when folding in the singulation process, the stress due to the pressing is caused by the inner end edge 131d of the first connecting portion 131 of the crystal wafer 100 (the same applies to the second connecting portion 132) and the long side 12a of the package 12. It is easy to concentrate on the connection part 12f. Therefore, in the present embodiment, the crystal wafer 100 is ruptured from the connection portion 12f as a starting point, and the rupture is progressed substantially linearly along the Z′-axis direction of the crystal wafer 100, whereby the individual pieces of the package 12 are obtained. It can be easily separated.

  In the present embodiment, the width W11 of the end portion 131a on the support portion 101 side of the first connecting portion 131 is the long side of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4). The width W12 of the end portion 131b on the 12a side is larger than the end edge 131c on the support portion 101 side of the outer end edge 131c of the first connecting portion 131 than the end edge 131f on the long side 12a side of the package 12. Is also provided at a position far from the center position 12c of the long side 12a of the package 12 in plan view. In addition, a groove 133 extending in the Z′-axis direction is provided at the end 131 b on the long side 12 a side of the first connecting portion 131. Thereby, in the singulation process, the breakage generated from the connection portion 12f as a starting point can be smoothly advanced along the Z′-axis direction of the crystal wafer 100, and the package 12 can be easily separated from the crystal wafer 100, Generation | occurrence | production of the appearance defect of the package 12 can be suppressed by suppressing generation | occurrence | production of the breakage marks, such as a crack and chipping.

  Further, the groove 133 can reduce the pressing force (pressing force) required for breaking the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4), and can be separated into individual pieces. The damage applied to the package 12 at the time of folding in the process can be reduced. In this case, the grooves 133B and 133B are formed on both surfaces of the first sealing member wafer 100B, the grooves 133A and 133A are formed on both surfaces of the quartz vibration plate wafer 100A, and the second sealing member wafer 100C is further formed. By forming the grooves 133C and 133C on both surfaces, damage to the package 12 at the time of folding can be further reduced.

  The groove 133 is formed along a direction perpendicular to the X-axis direction of the crystal wafer 100 (in this case, the Z′-axis direction), and the groove 133 is formed in the package 12 (the crystal vibrating plate 2 and the first sealing member 3). Since the groove portion 133 is formed by wet etching, the corner portion 12e of the package 12 is lost due to the anisotropy of the crystal wafer 100 (the second sealing member 4) is spaced apart from the corner portion 12e. Chamfering) can be suppressed.

  Further, since the inner end edge 131d of the first connecting portion 131 has a shape with no corners other than both end portions, the inner end edge 131d and the package 12 (the crystal diaphragm 2, the first sealing member 3, The stress at the time of folding can be reliably concentrated on the connecting portion 12f with the long side 12a of the second sealing member 4), and the fracture of the crystal wafer 100 can be reliably generated at the connecting portion 12f.

  In addition, since the first and second connecting portions 131 and 132 are provided on the long side 12a on the + X direction side of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4). When wet etching is performed, it is possible to suppress the occurrence of defects (chamfering) at the corners on the + X direction side of the vibrating portion 22 (see FIG. 8) of the crystal vibrating plate 2 due to the anisotropy of the crystal wafer 100. That is, as compared with the case where the first and second connecting portions 131 and 132 are provided on the long side 12b on the −X direction side of the package 12, the vibrating portion 22 can be formed in a shape closer to a rectangle.

  Here, in the singulation process, when the vicinity of the center position 12d of the other long side 12b of the package 12 is pressed, a force to deform the package 12 is applied to the pressing portion (here, the long side 12b of the package 12). The central position 12d) and a connecting portion (here, the edge 131e of the outer end edge 131c on the support portion 101 side) of the first and second connecting portions 131 and 132 to the support portion 101 side (here Then, it is thought that it acts most greatly on the straight line L2). Then, in the region inside the straight line (tension line), it is considered that deformation due to pressing and the accompanying breakage (breakage) occur. As described above, the breakage is generated starting from the connection portion 12f, and the crystal It is possible to make the breakage progress substantially linearly along the Z′-axis direction of the wafer 100. That is, in the region inside the tension line, it is possible to control the fracture caused by the press to some extent. On the other hand, in the region outside the tension line, it is considered that deformation or breakage (fracture) influenced by shape disturbance, crystal orientation, state, and other external factors occurs. Unlike the area inside the line, it may occur in an unexpected position and direction, and it is considered difficult to control.

  In the present embodiment, the outer edge 131c of the first connecting portion 131 (the same applies to the second connecting portion 132) is provided along the straight line L2 corresponding to the tension line in plan view. A portion that needs to be broken for removal, specifically, a portion between the corner portion 12e of the package 12 (the crystal diaphragm 2, the first sealing member 3, and the second sealing member 4) and the connection portion 12f. Can be included in the region inside the tension line (straight line L2). Thereby, a fracture | rupture can be generated only in a location required for folding, and generation | occurrence | production of the external appearance defect of the package 12 can be suppressed.

  In the above embodiment, the crystal resonator device is a crystal resonator, but the present invention can also be applied to a crystal resonator device (for example, a crystal oscillator) other than the crystal resonator.

  Moreover, in the said embodiment, although the 1st, 2nd connection part 131,132 was provided in the long side 12a side of the package 12 (the quartz-crystal diaphragm 2, the 1st sealing member 3, the 2nd sealing member 4), It is good also as a structure which provides a 1st, 2nd connection part in the short side of the package 12. FIG.

  The present invention can be implemented in various other forms without departing from the spirit, the gist, or the main features of the present invention. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  The present invention can be used for a quartz crystal wafer in which a plurality of quartz vibration device packages are assembled.

DESCRIPTION OF SYMBOLS 100 Crystal wafer 10 Crystal oscillator 12 Package 100A Crystal diaphragm wafer 2 Crystal diaphragm 101A Support part 131A 1st connection part 132A 2nd connection part 133A Groove part 100B 1st sealing member wafer 3 1st sealing member 101B Support Part 131B First connecting part 132B Second connecting part 133B Groove part 100C Wafer for second sealing member 4 Second sealing member 101C Support part 131C First connecting part 132C Second connecting part 133C Groove part

Claims (6)

A first sealing member wafer in which a plurality of first sealing members are aggregated, a crystal diaphragm wafer in which a plurality of crystal diaphragms are aggregated, and a second seal in which a plurality of second sealing members are aggregated A quartz wafer in which a plurality of quartz vibration device packages are assembled by laminating a wafer for a stop member,
The package has a configuration in which the crystal diaphragm and the first and second sealing members that cover the crystal diaphragm from above and below are laminated,
The first sealing member wafer includes a plurality of first sealing members each having a substantially rectangular shape in plan view, and each first sealing member is disposed on one side of the first sealing member in plan view. The first sealing member support portion provided apart from the first sealing member is connected via the first and second connecting portions,
In the first sealing member wafer, a groove portion is formed along one side of the first sealing member at an end portion on one side of the first sealing member of each of the first and second connecting portions. The groove portion is formed from a connection portion between the inner edge of the first and second connecting portions on the side closer to the center position of one side of the first sealing member and one side of the first sealing member, Each extending toward the corner of the first sealing member, and each groove does not reach the corner of the first sealing member,
The wafer for crystal diaphragms is a collection of a plurality of crystal diaphragms having a substantially rectangular shape in plan view, and each crystal diaphragm is separated from the crystal diaphragm on one side of the crystal diaphragm in plan view. It is configured to be connected to the provided quartz diaphragm supporting part via the first and second connecting parts,
In the crystal vibration plate wafer, a groove portion is formed along one side of the crystal vibration plate at an end portion on one side of the crystal vibration plate of each of the first and second connecting portions. From the connection portion between the inner edge of the first and second connecting portions on the side closer to the center position of one side of the quartz crystal plate and one side of the quartz plate, toward the corner of the quartz plate, respectively. And each groove portion does not reach the corner of the crystal diaphragm,
In the second sealing member wafer, a plurality of the second sealing members having a substantially rectangular shape in a plan view are assembled, and each second sealing member is disposed on one side of the second sealing member in a plan view. It is configured to be connected to the second sealing member support portion provided separately from the second sealing member via the first and second connecting portions,
In the second sealing member wafer, a groove portion is formed along one side of the second sealing member at an end of one side of the second sealing member of each of the first and second connecting portions. The groove portion is formed from a connection portion between the inner edge of the first and second coupling portions on the side closer to the center position of one side of the second sealing member and one side of the second sealing member, Each extending toward the corner of the second sealing member, and each groove does not reach the corner of the second sealing member,
The first connecting portion of the first sealing member wafer, the first connecting portion of the crystal vibrating plate wafer, and the first connecting portion of the second sealing member wafer are in plan view. The second connecting portion of the first sealing member wafer, the second connecting portion of the quartz diaphragm wafer, and the second sealing member wafer are provided at substantially coincident positions. A quartz wafer, wherein the second connecting portion is provided at a position substantially coincident with a plan view. The crystal wafer according to claim 1,
Each groove formed in the first sealing member wafer, each groove formed in the quartz vibrating plate wafer, and each groove formed in the second sealing member wafer are X of the quartz wafer. A quartz wafer characterized by being formed along a direction perpendicular to the axial direction. The quartz wafer according to claim 1 or 2,
The inner edges of the first and second connecting portions formed on the first sealing member wafer, the inner edges of the first and second connecting portions formed on the quartz diaphragm wafer, A quartz wafer, wherein each inner end edge of the first and second connecting portions formed on the second sealing member wafer is formed in a curved shape. In the crystal wafer according to any one of claims 1 to 3,
The ends of the first and second connecting portions of the quartz vibration plate wafer on the support portion side are wider in plan view than the end portions on one side of the crystal vibration plate. ,
Each of the end portions on the support portion side of the first and second connecting portions of the first sealing member wafer has a width in a plan view as compared with an end portion on one side of the first sealing member. It ’s getting bigger,
Each of the end portions on the support portion side of the first and second connecting portions of the second sealing member wafer has a width in a plan view as compared with an end portion on one side of the second sealing member. Quartz wafers that are large. In the crystal wafer according to any one of claims 1 to 4,
The outer edge on the side far from the center position of one side of each of the first and second connection portions of the first and second connection portions of the crystal vibration plate wafer is connected to a corner portion of the crystal vibration plate,
The outer edge of the first sealing member wafer on the side far from the central position of one side of the first sealing member of each of the first and second connecting portions is at a corner of the first sealing member. Concatenated,
The outer edge of the second sealing member wafer on the side far from the center position of one side of the second sealing member of each of the first and second connecting portions of the second sealing member wafer is at a corner of the second sealing member. A crystal wafer characterized by being connected. The crystal wafer according to claim 5,
The first and second connecting portions of the crystal diaphragm wafer are provided on one long side of the crystal diaphragm,
The first and second connecting portions of the first sealing member wafer are provided on one long side of the first sealing member,
The quartz wafer, wherein the first and second connecting portions of the second sealing member wafer are provided on one long side of the second sealing member.

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