JP6645211B2 - Method for manufacturing crystal vibrating device - Google Patents

Description

  The present invention relates to a method for manufacturing a crystal resonator device.

  2. Description of the Related Art In recent years, the operating frequency of various electronic devices has been increased, and the size of packages (particularly, the height thereof) has been reduced. With such higher frequencies and smaller packages, quartz crystal vibrating devices (for example, crystal oscillators and crystal oscillators) are also required to respond to higher frequencies and smaller packages.

  In this type of crystal vibrating device, the housing is formed of a substantially rectangular parallelepiped package. The package includes a first sealing member and a second sealing member made of quartz, and a quartz vibrating plate made of quartz and having excitation electrodes formed on both main surfaces. The first sealing member and the second sealing member are laminated and joined via the quartz plate, and the excitation electrode of the quartz plate disposed inside the package (internal space) is hermetically sealed (for example, And Patent Document 1). Hereinafter, such a laminated form of the crystal vibrating device is referred to as a sandwich structure.

  By the way, in this type of crystal vibrating device, in a manufacturing process, a wafer in which a plurality of packages are assembled is manufactured and cut into individual packages by dicing or the like. Also, conventionally, it has been known that a crystal vibrating reed is separated from a wafer in which a plurality of the vibrating reeds are gathered to be separated into individual pieces (for example, see Patent Document 2).

JP 2010-252051 A JP 2008-092505 A

  However, to separate each package by a breaking method from the state of a wafer in which a plurality of packages of the crystal vibrating device as described above are assembled requires a quartz vibrating plate, a first sealing member, and a second It is necessary to separate each of the sealing members from the wafer, which has conventionally been difficult.

  The present invention has been made in view of the above-described circumstances, and provides a method of manufacturing a crystal vibrating device in which a plurality of packages of a crystal vibrating device can be easily divided into individual pieces from a state of an assembled wafer. The purpose is to do.

According to the present invention, means for solving the above-mentioned problems are configured as follows. That is, the present invention provides a first sealing member wafer formed in the first sealing member wafer forming step, a quartz plate wafer formed in the quartz plate wafer forming step, and a second sealing member. A laminating step of forming a quartz wafer by laminating the second sealing member wafer formed in the member wafer forming step, and a singulating step of singulating a crystal vibrating device package from the quartz wafer And a plurality of first sealing members having a substantially rectangular shape in a plan view are assembled, and each first sealing member is formed in the first sealing member wafer forming step. The first sealing member was connected to the first sealing member support portion provided on one side of the first sealing member in plan view and spaced apart from the first sealing member via the first and second connection portions. forming the first sealing member for the wafer, wherein the first sealing member for the wafer In the first sealing member wafer after the forming step, one end of the first sealing member of each of the first and second connecting portions is formed along one side of the first sealing member. A groove is formed, and the groove is connected to an inner edge of the first and second connecting portions on a side closer to a center position of one side of the first sealing member and one side of the first sealing member. , The grooves extend toward the corners of the first sealing member, and the respective grooves do not reach the corners of the first sealing member. In the process, a plurality of substantially rectangular quartz vibrating plates in a plan view are assembled, and each quartz vibrating plate is provided on one side of the quartz vibrating plate in plan view and separated from the quartz vibrating plate. to use the support portion, first and second connecting portions to form said crystal plate wafer that is connected via the quartz plate In the quartz-crystal-diaphragm wafer after the wafer forming step, a groove portion is formed along one side of the quartz-crystal plate at an end on one side of the quartz-crystal plate of each of the first and second connecting portions. The groove is formed at a corner of the quartz plate from a connection between the inner edge of the first and second connecting portions on the side closer to the center of one side of the quartz plate and one side of the quartz plate. And each groove does not reach the corner of the quartz vibrating plate, and in the second sealing member wafer forming step, a plurality of substantially rectangular 2 sealing members are assembled, and each second sealing member is provided on one side of the second sealing member in a plan view and separated from the second sealing member. the supporting portion, first, to form the coupled via a second connecting portion and the second sealing member for the wafer, the second In the second sealing member wafer after the sealing member wafer forming step, the second sealing member has one end of each of the first and second connecting portions on one side of the second sealing member. A groove is formed along one side of the member, and the groove is formed on the inner edge of the first and second connecting portions on the side closer to the center of one side of the second sealing member, and the second sealing member And extending from the connection portion with one side toward the corner of the second sealing member, and each groove does not reach the corner of the second sealing member. In the step, the first sealing member of the first sealing member wafer, the crystal vibration plate of the crystal vibration plate wafer, and the second sealing member of the second sealing member wafer By stacking, the plurality of packages of the crystal vibrating device form the grouped crystal wafer. In the crystal wafer after the laminating step, the first connection portion of the first sealing member wafer, the first connection portion of the crystal vibration plate wafer, and the second connection portion of the second sealing member wafer A first connection portion provided at a position substantially coinciding in plan view, and the second connection portion of the first sealing member wafer, and the second connection portion of the crystal vibration plate wafer; The second connecting portion of the second sealing member wafer is provided at a position substantially coinciding in a plan view, and in the singulation step, the first sealing member has a side opposite to the one side. The packages on the other side are pressed by a pressing member, whereby the packages are cut off from the quartz wafer.

According to the above configuration, in the singulation step, the first and second connecting portions are provided on the quartz vibrating plate, the first sealing member, and the second sealing member of each package. The crystal vibration plate, the first sealing member, and the second sealing member can be easily separated from each other at the second connecting portion. Therefore, each package can be easily separated from the crystal wafer in which a plurality of packages of the crystal vibrating device are assembled by folding. Further, in the singulation process, the force required to break off the package (the quartz vibrating plate, the first sealing member, and the second sealing member) can be reduced by the groove, and the force applied to the package during the breaking is reduced. The damage done can be reduced. Further, since the groove does not reach the corners of the package (the quartz vibrating plate, the first sealing member, and the second sealing member), when forming the groove by wet etching, the package due to the anisotropy of the quartz wafer Can be suppressed (chamfering) at the corners.

  In the above-described configuration, each of the ends of the first and second connecting portions of the wafer for the crystal vibration plate on the support portion side has a width in a plan view, which is greater than that of the one side of the crystal vibration plate. The end of the first sealing member wafer on the side of the support portion of each of the first and second connecting portions is more planar than the end of one side of the first sealing member. The width in the view is large, and the end of each of the first and second connecting portions of the wafer for the second sealing member on the support portion side is an end on one side of the second sealing member. The width in plan view may be greater than the width of the part.

  According to the above configuration, in the singulation process, the stress generated at the time of the breaking is generated inside the first and second connection portions of the package (the quartz plate, the first sealing member, and the second sealing member). It is easy to concentrate on the connection between the edge (the edge closer to the center of one side of the package of the first and second connecting portions) and one side of the package. Therefore, a break is generated in the crystal wafer starting from the connection portion, and the break is made to proceed substantially linearly along one side of the package, so that the package can be easily separated. Therefore, when the package is cut off, the package can be easily separated from the crystal wafer at the end of the first connection portion on one side of the package, and generation of burrs, cracks, chipping, and other cutting marks can be prevented. Thus, occurrence of poor appearance of the package can be suppressed.

  In the above configuration, an outer edge of each of the first and second connection portions of the wafer for the crystal vibration plate that is farther from a center position of one side of the crystal vibration plate is connected to a corner of the crystal vibration plate. An outer edge of each of the first and second connecting portions of the first sealing member wafer farther from a center position of one side of the first sealing member is a corner of the first sealing member. And an outer edge farther from a central position of one side of the second sealing member of each of the first and second connecting portions of the second sealing member wafer is the second sealing member. May be connected to the corners.

  According to the above configuration, in the singulation process, the stress generated when each package is broken is easily concentrated on the corners of the package (the crystal vibration plate, the first sealing member, and the second sealing member). Therefore, the break generated at the connection portion between the inner edges of the first and second connection portions and one side of the package can be smoothly advanced from the connection portion toward the corner of the package, and the crystal wafer Therefore, each package can be easily separated into individual packages.

  The said structure WHEREIN: The said 1st, 2nd connection part of the said wafer for crystal vibrating plates is provided in one long side of the said quartz vibrating plate, and the said 1st, 2nd of said 1st wafer for sealing members is provided. The connection part is provided on one long side of the first sealing member, and the first and second connection parts of the second sealing member wafer are one long side of the second sealing member. And in the singulation step, a central position of the other long side of the first sealing member may be pressed.

  According to the above configuration, in the singulation step, by pressing the center position of the other long side of the first sealing member, each package can be easily singulated from the quartz wafer by cutting.

  The said structure WHEREIN: Each said outer edge of the said 1st, 2nd connection part of the said wafer for crystal vibrating plates is along the straight line which passes the center position of the other long side of the said crystal vibrating plate in planar view. Wherein the outer edge of each of the first and second connecting portions of the first sealing member wafer is a straight line passing through the center of the other long side of the first sealing member in plan view. And the outer edge of each of the first and second connection portions of the second sealing member wafer is located at the center of the other long side of the second sealing member in plan view. May be provided along a straight line passing through.

  According to the above configuration, in the singulation step, when the vicinity of the center position of the other long side of the first sealing member is pressed, the force for deforming the package is applied to the pressed portion (the other long side of the package). It is considered that the maximum effect is exerted on a straight line (tension line) connecting the first and second connection portions to the support portion side (the outer edge of the support portion side edge). In the area outside this tension line, it is considered that deformation or breakage occurs due to shape disorder, crystal orientation, state, and other external factors, and this deformation or breakage occurs in unexpected positions and directions. Can occur. However, in the above configuration, since the outer edges of each of the first and second connecting portions are provided along the straight line corresponding to the tension line in plan view, breakage is required for breaking off. All locations can be included in the area inside the tension line. Thereby, breakage can be generated only in a portion necessary for the breakage, and occurrence of poor appearance of the package can be suppressed.

In the above configuration, each groove formed on the first sealing member wafer, each groove formed on the crystal vibration plate wafer, and each groove formed on the second sealing member wafer, It may be formed along a direction perpendicular to the X-axis direction of the crystal wafer. According to the above configuration, when the groove is formed by wet etching, it is possible to suppress loss (chamfering) of the corner of the package due to anisotropy of the crystal wafer.

In the above configuration, each inner edge of the first and second connection portions formed on the first sealing member wafer, and each of the first and second connection portions formed on the crystal diaphragm wafer. An inner edge and each inner edge of the first and second connecting portions formed on the second sealing member wafer may be formed in a curved shape. According to the above configuration, since the inner edge of each of the first and second connecting portions has a shape having no corners other than both end portions, the inner edge and the package (the quartz vibrating plate, the first sealing The stress at the time of breaking can be reliably concentrated on the connection portion with the long side of the member, the second sealing member), and the breakage of the crystal wafer can be reliably generated at the connection portion.

  According to the present invention, in the singulation process, each package can be easily singulated from a crystal wafer in which a plurality of packages of the crystal vibrating device are assembled by folding.

FIG. 1 is a flowchart illustrating an example of a method for manufacturing a crystal resonator according to the present embodiment. FIG. 2 is a schematic plan view showing an example of the quartz wafer formed in the laminating step in the method for manufacturing the quartz oscillator of FIG. FIG. 3 is an enlarged view showing a part of the crystal wafer of FIG. FIG. 4 is an exploded perspective view showing a first sealing member wafer, a crystal vibration plate wafer, and a second sealing member wafer constituting the crystal wafer of FIG. 2. FIG. 5 is a schematic configuration diagram illustrating an example of a crystal resonator manufactured by the method for manufacturing a crystal resonator according to the present embodiment. FIG. 6 is a schematic plan view showing a first sealing member of the crystal unit shown in FIG. FIG. 7 is a schematic rear view showing the first sealing member of the crystal unit shown in FIG. FIG. 8 is a schematic plan view showing a crystal diaphragm of the crystal resonator of FIG. FIG. 9 is a schematic rear view showing the quartz plate of the quartz oscillator of FIG. FIG. 10 is a schematic plan view showing a second sealing member of the crystal unit shown in FIG. FIG. 11 is a schematic rear view showing the second sealing member of the crystal unit shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  Before describing the method of manufacturing the crystal resonator device according to the present embodiment, the crystal resonator device will be described first. In the following, a crystal resonator 10 as shown in FIGS. 5 to 11 will be described as an example of a crystal resonator device.

-Crystal resonator-
As shown in FIG. 5, the crystal unit 10 covers the crystal plate 2 and the first excitation electrode 221 of the crystal plate 2 (see FIG. 8), and is formed on one main surface 211 of the crystal plate 2. The first sealing member 3 for hermetically sealing the first excitation electrode 221 and the other main surface 212 of the crystal vibration plate 2 are covered with the second excitation electrode 222 (see FIG. 9) of the crystal vibration plate 2. A second sealing member for hermetically sealing a second excitation electrode formed in pairs with the excitation electrode; In the crystal resonator 10, the first sealing member 3 and the second sealing member 4 are stacked and bonded via the crystal vibrating plate 2 to form a package 12 having a substantially rectangular parallelepiped sandwich structure. .

  In the crystal resonator 10, the internal space 13 of the package 12 is formed by joining the crystal plate 2 and the first sealing member 3 and joining the crystal plate 2 and the second sealing member 4. A vibrating part 22 including a first excitation electrode 221 and a second excitation electrode 222 formed on both main surfaces 211 and 212 of the quartz plate 2 is hermetically sealed in the internal space 13 of the package 12. The crystal unit 10 has a package size of, for example, 1.0 × 0.8 mm, and is designed to be small and low in height. Further, with the miniaturization, the package 12 does not form the castellation, and uses the through holes (first to third through holes) to conduct the electrodes.

  Next, each configuration of the quartz resonator 10 having the sandwich structure will be described with reference to FIGS. Here, the respective members that are not united with the quartz vibrating plate 2, the first sealing member 3, and the second sealing member 4 will be described.

  As shown in FIGS. 8 and 9, the quartz vibrating plate 2 is a piezoelectric substrate made of quartz, and both main surfaces (one main surface 211 and the other main surface 212) are formed as flat and smooth surfaces (mirror finished). ing. As the quartz vibrating plate 2, an AT-cut quartz plate that performs thickness shear vibration is used. 8 and 9, both main surfaces 211 and 212 of the quartz plate 2 are XZ 'planes. In the XZ ′ plane, the direction parallel to the short direction (short side direction) of the quartz plate 2 is the X-axis direction, and the direction parallel to the long direction (long side direction) of the quartz plate 2 is the Z ′ axis. Direction. Note that the AT cut is 35 ° around the X axis with respect to the Z axis, out of the three crystal axes of the synthetic quartz, the electric axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis). This is a processing method for cutting out at an angle inclined by 15 '. In an AT-cut quartz plate, the X axis coincides with the crystal axis of the quartz. The Y′-axis and the Z′-axis correspond to the axes tilted by 35 ° 15 ′ from the Y-axis and the Z-axis of the crystal axis of quartz, respectively. The Y′-axis direction and the Z′-axis direction correspond to the cutting direction when cutting the AT-cut quartz plate.

  A pair of excitation electrodes (a first excitation electrode 221 and a second excitation electrode 222) are formed on both main surfaces 211 and 212 of the quartz plate 2. The quartz vibrating plate 2 includes a vibrating portion 22 formed in a substantially rectangular shape, an outer frame portion 23 surrounding the outer periphery of the vibrating portion 22, and a connecting portion (holding portion) 24 connecting the vibrating portion 22 and the outer frame portion 23. And the vibrating part 22, the connecting part 24, and the outer frame part 23 are integrally provided. The connecting portion 24 is provided only at one position between the vibrating portion 22 and the outer frame portion 23, and the portion where the connecting portion 24 is not provided is a space (gap) 22b. Although not shown, the vibrating part 22 and the connecting part 24 are formed thinner than the outer frame part 23. Due to such a difference in thickness between the outer frame portion 23 and the connecting portion 24, the natural frequency of the piezoelectric vibration of the outer frame portion 23 and the connecting portion 24 is different. Becomes difficult to resonate.

  The connecting portion 24 extends (projects) from only one corner portion 22a located in the + X direction and the −Z ′ direction of the vibrating portion 22 to the outer frame portion 23 in the −Z ′ direction. As described above, since the connecting portion 24 is provided at the corner portion 22a of the outer peripheral end portion of the vibrating portion 22 where the displacement of the piezoelectric vibration is relatively small, the connecting portion 24 is connected to a portion other than the corner portion 22a (the center of the side). Section), it is possible to suppress the piezoelectric vibration from leaking to the outer frame section 23 via the connecting section 24, and it is possible to more efficiently cause the vibration section 22 to perform the piezoelectric vibration. Further, as compared with the case where two or more connecting portions 24 are provided, the stress acting on the vibrating portion 22 can be reduced, and the frequency shift of the piezoelectric vibration due to such stress can be reduced to stabilize the piezoelectric vibration. Performance can be improved.

  A first excitation electrode 221 is provided on one main surface of the vibrating part 22, and a second excitation electrode 222 is provided on the other main surface of the vibrating part 22. The first excitation electrode 221 and the second excitation electrode 222 have extraction electrodes (first extraction electrode 223 and second extraction electrode 224) for connecting to external electrode terminals (one external electrode terminal 431 and another external electrode terminal 432). Is connected. The first extraction electrode 223 is extracted from the first excitation electrode 221, and is connected to the connection bonding pattern 27 formed on the outer frame 23 via the connection portion 24. The second extraction electrode 224 is extracted from the second excitation electrode 222, and is connected to the connection bonding pattern 28 formed on the outer frame 23 via the connecting portion 24. As described above, the first extraction electrode 223 is formed on one main surface side of the connection portion 24, and the second extraction electrode 224 is formed on the other main surface side of the connection portion 24. The first excitation electrode 221 and the first extraction electrode 223 are formed by, for example, a physical PVD film formed on one main surface 211 by physical vapor deposition, and formed by physical vapor deposition on the PVD film. Electrode PVD film. The second excitation electrode 222 and the second extraction electrode 224 are formed, for example, by a physical PVD film formed on the other main surface 212 by physical vapor deposition and by a physical vapor deposition on the PVD film. Electrode PVD film.

  Vibration-side sealing portions 25 for joining the crystal vibration plate 2 to the first sealing member 3 and the second sealing member 4 are provided on both main surfaces 211 and 212 of the crystal vibration plate 2, respectively. A vibration-side first bonding pattern 251 for bonding to the first sealing member 3 is formed in the vibration-side sealing portion 25 on one main surface 211 of the crystal vibration plate 2. In addition, a vibration-side second bonding pattern 252 for bonding to the second sealing member 4 is formed in the vibration-side sealing portion 25 of the other main surface 212 of the crystal vibration plate 2. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are provided on the outer frame 23 described above, and are formed in a ring shape in plan view. The vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 are provided so as to be close to the outer peripheral edges of both main surfaces 211 and 212 of the quartz vibrating plate 2. The pair of the first excitation electrode 221 and the second excitation electrode 222 of the quartz vibrating plate 2 are not electrically connected to the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252.

  The vibration-side first bonding pattern 251 is, for example, an underlying PVD film 2511 formed by physical vapor deposition on one main surface 211 and an electrode formed by physical vapor deposition on the underlying PVD film 2511. And a PVD film 2512. The vibration side second bonding pattern 252 includes, for example, an underlying PVD film 2521 formed on the other main surface 212 by physical vapor deposition and an electrode laminated on the underlying PVD film 2521 by physical vapor deposition. And a PVD film 2522. That is, the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252 have the same configuration, and are configured by laminating a plurality of layers on the vibration-side sealing portion 25 of both the main surfaces 211 and 212. A Ti layer (or Cr layer) and an Au layer are formed by vapor deposition from the lowermost layer side. As described above, in the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252, the base PVD films 2511 and 2521 are made of a single material (Ti (or Cr)), and the electrode PVD films 2512 and 2522 are formed. It is made of a single material (Au), and the electrode PVD films 2512 and 2522 are thicker than the base PVD films 2511 and 2521. Further, the first excitation electrode 221 and the vibration side first bonding pattern 251 formed on the one main surface 211 of the crystal vibration plate 2 have the same thickness, and the first excitation electrode 221 and the vibration side first bonding pattern 251 have the same thickness. Are formed of the same metal, and the second excitation electrode 222 and the vibration side second bonding pattern 252 formed on the other main surface 212 of the quartz vibrating plate 2 have the same thickness, and the second excitation electrode 222 and the vibration side The surface of the second bonding pattern 252 is made of the same metal. Further, the vibration side first bonding pattern 251 and the vibration side second bonding pattern 252 are non-Sn patterns.

  As shown in FIGS. 8 and 9, one through hole (first through hole 26) penetrating between one main surface 211 and the other main surface 212 is formed in the quartz plate 2. The first through hole 26 is provided in the outer frame portion 23 of the quartz plate 2. The first through holes 26 are connected to the connection joining patterns 453 of the second sealing member 4.

  As shown in FIGS. 5, 8, and 9, the first through hole 26 has a through electrode 261 for conducting the electrodes formed on the one main surface 211 and the other main surface 212. Are formed along the inner wall surface. The central portion of the first through hole 26 becomes a hollow penetrating portion 262 penetrating between the one main surface 211 and the other main surface 212. Connection joining patterns 264 and 265 are formed around the outer periphery of the first through hole 26. The connection bonding patterns 264 and 265 are provided on both main surfaces 211 and 212 of the crystal diaphragm 2.

  The connection bonding pattern 264 of the first through hole 26 formed on the one main surface 211 of the crystal plate 2 extends in the outer frame 23 along the X-axis direction. Further, on one main surface 211 of the quartz vibrating plate 2, a connection joint pattern 27 connected to the first extraction electrode 223 is formed, and this connection joint pattern 27 also extends in the X-axis direction in the outer frame portion 23. Extends along. The connection bonding pattern 27 is provided on the opposite side of the connection bonding pattern 264 in the Z′-axis direction with the vibration portion 22 (first excitation electrode 221) interposed therebetween. That is, the connection joining patterns 27 and 264 are provided on both sides of the vibrating portion 22 in the Z′-axis direction.

  Similarly, the connection bonding pattern 265 of the first through hole 26 formed on the other main surface 212 of the crystal plate 2 extends in the outer frame portion 23 along the X-axis direction. In addition, on the other main surface 212 of the crystal diaphragm 2, a connection bonding pattern 28 connected to the second extraction electrode 224 is formed, and this connection bonding pattern 28 is also formed in the outer frame portion 23 in the X-axis direction. Extends along. The connection bonding pattern 28 is provided on the opposite side of the connection bonding pattern 265 in the Z′-axis direction with the vibration portion 22 (second excitation electrode 222) interposed therebetween. That is, the connection joining patterns 28 and 265 are provided on both sides of the vibration section 22 in the Z′-axis direction.

  The connection bonding patterns 27, 28, 264, 265 have the same configuration as the vibration-side first bonding pattern 251, the vibration-side second bonding pattern 252, and include the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252. It can be formed by the same process. Specifically, the connection bonding patterns 27, 28, 264, 265 include, for example, an underlying PVD film formed by physical vapor deposition on both main surfaces 211, 212 of the quartz vibrating plate 2 and the underlying PVD film. An electrode PVD film is formed by layering the film by physical vapor deposition on the film.

  In the crystal resonator 10, the first through-hole 26 and the connection bonding patterns 27, 28, 264, 265 are formed inside the internal space 13 (inside the inner peripheral surfaces of the bonding materials 11a, 11b) in plan view. You. The internal space 13 is formed inside (inside) the first vibration-side joining pattern 251 and the second vibration-side joining pattern 252 in plan view. The inside of the internal space 13 means strictly inside the inner peripheral surfaces of the bonding materials 11a and 11b without including on the bonding materials 11a and 11b described later. The first through-hole 26 and the connection bonding patterns 27, 28, 264, 265 are not electrically connected to the vibration-side first bonding pattern 251 and the vibration-side second bonding pattern 252.

  As shown in FIGS. 6 and 7, the first sealing member 3 is a substantially rectangular parallelepiped substrate formed of quartz, and the other main surface 312 of the first sealing member 3 (joined to the quartz vibration plate 2). Surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, as the first sealing member 3, an AT-cut quartz plate similar to the above-described quartz diaphragm 2 is used.

  The other main surface 312 of the first sealing member 3 is provided with a sealing-side first sealing portion 32 for joining to the quartz-crystal vibrating plate 2. The sealing-side first sealing portion 32 is formed with a sealing-side first bonding pattern 321 for bonding to the crystal vibration plate 2. The sealing-side first bonding pattern 321 is formed in an annular shape in plan view. The sealing-side first bonding pattern 321 is provided so as to approach the outer peripheral edge of the other main surface 312 of the first sealing member 3. The sealing-side first bonding pattern 321 has the same width at all positions on the sealing-side first sealing portion 32 of the first sealing member 3.

  The sealing-side first bonding pattern 321 is formed by, for example, stacking the underlying PVD film 3211 formed by physical vapor deposition on the first sealing member 3 and the underlying PVD film 3211 by physical vapor deposition. The electrode PVD film 3212 is formed. Note that Ti (or Cr) is used for the base PVD film 3211 and Au is used for the electrode PVD film 3212. Further, the sealing-side first bonding pattern 321 is a non-Sn pattern. Specifically, the sealing-side first bonding pattern 321 is formed by stacking a plurality of layers on the sealing-side first sealing portion 32 of the other main surface 312, and a Ti layer (or A Cr layer) and an Au layer are formed by vapor deposition.

  On the other main surface 312 of the first sealing member 3, that is, on the surface facing the crystal vibration plate 2, connection connection patterns 35 and 36 to be connected to the connection connection patterns 264 and 27 of the crystal vibration plate 2 are formed. Have been. The connection joining patterns 35 and 36 extend along the direction of the short side of the first sealing member 3 (the X-axis direction in FIG. 7). The connection joining patterns 35 and 36 are provided at predetermined intervals in the long side direction (the Z ′ axis direction in FIG. 7) of the first sealing member 3, and Z ′ of the connection joining patterns 35 and 36 are provided. The spacing in the axial direction is substantially the same as the spacing in the Z′-axis direction (see FIG. 8) of the connection joining patterns 264 and 27 of the crystal diaphragm 2. The connection joining patterns 35 and 36 are connected to each other via a wiring pattern 33. The wiring pattern 33 is provided between the connection joining patterns 35 and 36. The wiring pattern 33 extends along the Z′-axis direction. The wiring pattern 33 is not bonded to the connection bonding patterns 264 and 27 of the crystal plate 2.

  The connection bonding patterns 35 and 36 and the wiring pattern 33 have the same configuration as the sealing-side first bonding pattern 321, and can be formed by the same process as the sealing-side first bonding pattern 321. Specifically, for example, the connection bonding patterns 35 and 36 and the wiring pattern 33 include a base PVD film formed by physical vapor deposition on the other main surface 312 of the first sealing member 3 and the base PVD film. An electrode PVD film is formed by layering the film by physical vapor deposition on the film.

  In the crystal resonator 10, the connection bonding patterns 35 and 36 and the wiring pattern 33 are formed inside the internal space 13 (inside the inner peripheral surfaces of the bonding materials 11a and 11b) in plan view. The connection bonding patterns 35 and 36 and the wiring pattern 33 are not electrically connected to the sealing-side first bonding pattern 321.

  The second sealing member 4 is, as shown in FIGS. 10 and 11, a substantially rectangular parallelepiped substrate formed of quartz, and one main surface 411 of the second sealing member 4 (bonded to the quartz vibrating plate 2). Surface) is formed as a flat smooth surface (mirror finish). In the present embodiment, an AT-cut quartz plate similar to the above-described quartz diaphragm 2 is used as the second sealing member 4.

  On one main surface 411 of the second sealing member 4, a sealing-side second sealing portion 42 to be joined to the quartz plate 2 is provided. In the sealing-side second sealing portion 42, a sealing-side second bonding pattern 421 for bonding to the crystal vibration plate 2 is formed. The sealing-side second bonding pattern 421 is formed in an annular shape in plan view. The sealing-side second bonding pattern 421 is provided so as to be close to the outer peripheral edge of the one main surface 411 of the second sealing member 4. The sealing-side second bonding pattern 421 has the same width at all positions on the sealing-side second sealing portion 42 of the second sealing member 4.

  The sealing-side second bonding pattern 421 is formed by, for example, stacking the underlying PVD film 4211 formed by physical vapor deposition on the second sealing member 4 and the physical vapor deposition on the underlying PVD film 4211. The electrode PVD film 4212 is formed. Note that Ti (or Cr) is used for the base PVD film 4211 and Au is used for the electrode PVD film 4212. Further, the sealing-side second bonding pattern 421 is a non-Sn pattern. Specifically, the sealing-side second bonding pattern 421 is configured by laminating a plurality of layers on the sealing-side second sealing portion 42 of the other main surface 412, and a Ti layer (or A Cr layer) and an Au layer are formed by vapor deposition.

  In addition, a pair of external electrode terminals (one external electrode terminal 431, etc.) electrically connected to the outside are provided on the other main surface 412 of the second sealing member 4 (an outer main surface not facing the quartz crystal diaphragm 2). External electrode terminals 432) are provided. The one external electrode terminal 431 and the other external electrode terminal 432 are located at both ends in the longitudinal direction in plan view of the other main surface 412 of the second sealing member 4 as shown in FIGS. The pair of external electrode terminals (one external electrode terminal 431 and the other external electrode terminal 432) are, for example, base PVD films 4311 and 4321 formed by physical vapor deposition on the other main surface 412, and a base PVD film 4311. , 4321 and PVD films 4312, 4322 formed by layering by physical vapor deposition. The one external electrode terminal 431 and the other external electrode terminal 432 occupy at least one third of the area of the other main surface 412 of the second sealing member 4.

  As shown in FIGS. 5, 10, and 11, the second sealing member 4 has two through holes (a second through hole 45 and a third through hole 45) penetrating between one main surface 411 and the other main surface 412. 46) are formed. The second through-hole 45 is connected to one external electrode terminal 431 and the connection bonding pattern 265 of the crystal vibration plate 2. The third through-hole 46 is connected to the other external electrode terminal 432 and the connection bonding pattern 28 of the crystal diaphragm 2.

  As shown in FIGS. 5, 10, and 11, the second through hole 45 and the third through hole 46 have through electrodes 451 and 451 for conducting the electrodes formed on one main surface 411 and the other main surface 412. 461 are formed along the inner wall surfaces of the second through-hole 45 and the third through-hole 46, respectively. Then, the central portions of the second through-hole 45 and the third through-hole 46 become through portions 452 and 462 in a hollow state penetrating between the one main surface 411 and the other main surface 412. Connection joining patterns 453 and 463 are formed around the outer periphery of each of the second through hole 45 and the third through hole 46.

  The connection joining patterns 453 and 463 are provided on one main surface 411 of the second sealing member 4, and are joined to the connection joining patterns 265 and 28 of the crystal plate 2. The connection bonding patterns 453 and 463 extend along the direction of the short side of the second sealing member 4 (the X-axis direction in FIG. 10). The connection bonding patterns 453 and 463 are provided at predetermined intervals in the long side direction (the Z ′ axis direction in FIG. 10) of the second sealing member 4, and Z ′ of the connection bonding patterns 453 and 463. The spacing in the axial direction is substantially the same as the spacing in the Z′-axis direction (see FIG. 9) of the connection joining patterns 265 and 28 of the crystal plate 2.

  The connection bonding patterns 453 and 463 have the same configuration as the sealing-side second bonding pattern 421, and can be formed by the same process as the sealing-side second bonding pattern 421. Specifically, the connection bonding patterns 453 and 463 are formed, for example, on a base PVD film formed by physical vapor deposition on one main surface 411 of the second sealing member 4 and on the base PVD film. And an electrode PVD film formed by laminating by chemical vapor deposition.

  In the crystal resonator 10, the second through-hole 45, the third through-hole 46, and the connection bonding patterns 453, 463 are formed inside the internal space 13 in plan view. The second through-hole 45, the third through-hole 46, and the connection bonding patterns 453 and 463 are not electrically connected to the sealing-side second bonding pattern 421. Also, the one external electrode terminal 431 and the other external electrode terminal 432 are not electrically connected to the sealing-side second bonding pattern 421.

  In the crystal resonator 10 including the crystal vibrating plate 2, the first sealing member 3, and the second sealing member 4 having the above configuration, the crystal vibrating plate 2 and the first sealing member 3 are connected to the vibration-side first bonding pattern 251. The quartz-crystal vibrating plate 2 and the second sealing member 4 overlap the vibration-side second bonding pattern 252 and the sealing-side second bonding pattern 421 in a state where the sealing-side first bonding pattern 321 and the sealing-side first bonding pattern 321 are overlapped. The package 12 having the sandwich structure shown in FIG. 5 is manufactured by diffusion bonding in the combined state. Thereby, the internal space 13 of the package 12, that is, the accommodation space of the vibrating part 22 is hermetically sealed.

  Then, the vibration-side first bonding pattern 251 and the sealing-side first bonding pattern 321 themselves become a bonding material 11a (see FIG. 5) generated after diffusion bonding, and the crystal material 2 and the first sealing material are formed by this bonding material 11a. The member 3 is joined. The vibration-side second bonding pattern 252 and the sealing-side second bonding pattern 421 themselves become a bonding material 11b generated after diffusion bonding, and the crystal vibration plate 2 and the second sealing member 4 are bonded by the bonding material 11b. . The joining members 11a and 11b are formed in a ring shape in a plan view, and are provided at positions substantially matching in a plan view. That is, it is provided at a position where the inner peripheral edges of the joining materials 11a and 11b substantially coincide, and provided at a position where the outer peripheral edges of the joining materials 11a and 11b approximately coincide.

  The wiring from the first and second excitation electrodes 221 and 222 to the one external electrode terminal 431 and the other external electrode terminal 432 of the quartz vibrating plate 2 is one of the bonding materials 11a and 11b as a sealing portion in plan view. It is provided in one. The outer and inner edges of the joining members 11a and 11b are formed in a substantially rectangular shape in plan view, and are formed so as to be close to the outer edge of the package 12. Thereby, it is possible to increase the size of the vibrating part 22 of the quartz vibrating plate 2. The distance between the inner peripheral edges of the joining members 11a and 11b and the space 22b between the vibrating portion 22 and the outer frame portion 23 is larger on the short side of the package 12 than on the long side.

  At this time, the connection bonding patterns described above are also diffusion bonded in a state of being overlapped. Specifically, the connection bonding pattern 264 of the crystal diaphragm 2 and the connection bonding pattern 35 of the first sealing member 3 are diffusion bonded. The connection bonding pattern 27 of the crystal diaphragm 2 and the connection bonding pattern 36 of the first sealing member 3 are diffusion bonded. In addition, the connection bonding pattern 265 of the crystal diaphragm 2 and the connection bonding pattern 453 of the second sealing member 4 are diffusion bonded. The connection bonding pattern 28 of the crystal diaphragm 2 and the connection bonding pattern 463 of the second sealing member 4 are diffusion bonded.

  Then, the connection bonding pattern 264 and the connection bonding pattern 35 themselves become the bonding material 14a (see FIG. 5) generated after the diffusion bonding, and the crystal member 2 and the first sealing member 3 are bonded by the bonding material 14a. Is done. The connection bonding pattern 27 and the connection bonding pattern 36 themselves become the bonding material 14b generated after diffusion bonding, and the crystal member 2 and the first sealing member 3 are bonded by the bonding material 14b. Further, the connection bonding pattern 265 and the connection bonding pattern 453 themselves become the bonding material 14c generated after the diffusion bonding, and the crystal vibration plate 2 and the second sealing member 4 are bonded by the bonding material 14c. The connection bonding pattern 28 and the connection bonding pattern 463 themselves become the bonding material 14d generated after the diffusion bonding, and the crystal vibration plate 2 and the second sealing member 4 are bonded by the bonding material 14d. These joining materials 14a to 14d have a role of conducting the through electrodes of the through holes and the joining materials 14a to 14d, and a role of hermetically sealing the joints. In addition, since the joining materials 14a to 14d are provided inward of the joining materials 11a and 11b as sealing portions in plan view, they are shown by broken lines in FIG.

-Manufacturing method of crystal vibrating device-
Next, a method for manufacturing the crystal resonator device according to the present embodiment will be described with reference to FIGS. Here, as an example of a method for manufacturing a crystal resonator device, a method for manufacturing the above-described crystal resonator 10 (see FIGS. 5 to 11) will be described.

  As shown in FIG. 1, the method of manufacturing the crystal resonator 10 according to the present embodiment includes the first sealing member wafer formed in the first sealing member wafer forming step (ST11), and the crystal resonator plate. FIG. 2 is obtained by laminating the wafer for the crystal vibration plate formed in the wafer forming step (ST12) and the second sealing member wafer formed in the second sealing member wafer forming step (ST13). And a singulation step (ST15) for forming a crystal wafer (laminated body of wafer) 100 as shown in FIG. . Note that the order of the first sealing member wafer forming step, the crystal vibration plate wafer forming step, and the second sealing member wafer forming step is not particularly limited. The first sealing member wafer forming step, the crystal vibration plate wafer forming step, and the second sealing member wafer forming step may be performed in parallel.

  Here, the crystal wafer 100 will be described with reference to FIGS. As shown in FIG. 4, the crystal wafer 100 is configured as a laminated body in which a first sealing member wafer 100B, a crystal diaphragm wafer 100A, and a second sealing member wafer 100C are laminated. .

  As shown in FIG. 2, the crystal wafer 100 has a configuration in which a plurality of packages 12 of the crystal unit 10 are assembled. In the example of FIG. 2, a plurality of packages 12 formed in a substantially rectangular shape in plan view are arranged in a matrix on the crystal wafer 100, and are arranged in the vertical direction (X-axis direction in FIG. 2) and the horizontal direction (Z direction in FIG. Eight packages 12 are arranged in the 'axial direction', and a total of 64 packages 12 are provided. Note that the number of the packages 12 is an example, and is not limited to the above number.

  The crystal wafer 100 is provided with a support portion (crosspiece) 101 for supporting a plurality of packages 12. The support portion 101 extends along the Z′-axis direction of the crystal wafer 100. Both ends of the support portion 101 are integrally connected to a frame portion (outer frame portion) 102 of the crystal wafer 100. A plurality of (eight in FIG. 2) support portions 101 are provided at predetermined intervals in the X-axis direction of the crystal wafer 100. The frame part 102 is a substantially rectangular frame body with one side opened in a plan view, and is formed in a substantially “U” shape. A support portion 101 is provided at a position corresponding to one open side of the frame portion 102, and the support portion 101 and the frame portion 102 integrally form an annular frame.

  A plurality of (eight in FIG. 2) packages 12 are supported by the support portion 101. The packages 12 are arranged at predetermined intervals in the Z′-axis direction of the crystal wafer 100. The support portion 101 is provided on one side of the package 12 in plan view. In the present embodiment, the support portion 101 is provided on one long side of the package 12 (the + X direction side in FIG. 2).

  The package 12 is connected to the support 101 via a connection (folding part). The connecting portion includes first and second connecting portions 131 and 132 provided at predetermined intervals in the Z′-axis direction of the crystal wafer 100. The first and second connection portions 131 and 132 extend from one long side 12a of the package 12 to the support portion 101 in plan view. That is, one end side (the −X direction side in FIG. 2) of the first and second connection portions 131 and 132 is connected to one long side of the package 12, and the other end side of the first and second connection portions 131 and 132 (The + X direction side in FIG. 2) is connected to the support portion 101. The package 12 is supported by the support 101 of the crystal wafer 100 only by the first and second connecting portions 131 and 132. That is, in plan view, the outer peripheral edge of the package 12 faces a space (gap) except for a portion where the first and second connecting portions 131 and 132 are connected.

  The first and second connecting portions 131 and 132 have the same configuration, and are formed with respect to a straight line (for example, a straight line L1 described later) that passes through the center of the package 12 and is perpendicular to the long side 12a of the package 12 in plan view. It has a substantially line-symmetric shape. Hereinafter, the first connecting portion 131 will be described as a representative, and the description of the second connecting portion 132 will be omitted.

  As shown in FIG. 3, the width (Z′-axis direction width) W11 of the end 131 a on the support portion 101 side is equal to the width (ZZ) of the end 131 b on the long side 12 a side of the package 12. (Width in the 'axial direction) W12 (W11> W12). Of the edges (edges) 131c and 131d of the first connecting portion 131, the outer edge 131c, that is, the edge farther from the center position 12c of the long side 12a of the package 12 (the -Z 'direction side in FIG. 3). The edge is connected to a corner (vertex) 12e of the package 12 in a plan view. Then, in the outer edge 131c of the first connecting portion 131, the edge 131e on the support portion 101 side is more outward than the edge 131f on the long side 12a side of the package 12 in plan view (the -Z 'direction in FIG. 3). Side). In other words, the edge 131e on the support portion 101 side is provided at a position farther from the straight line L1 passing through the center position 12c and perpendicular to the long side 12a in plan view than the edge 131f on the long side 12a side of the package 12. ing. The distance W13 between the edge 131e on the supporting portion 101 side and the straight line L1 is larger than the distance W14 between the edge 131f on the long side 12a side and the straight line L1 (W13> W14).

  In the present embodiment, the outer edge 131c of the first connecting portion 131 is provided along a straight line inclined with respect to the straight line L1. Specifically, the outer edge 131c is provided along a straight line L2 passing through the center position 12d of the other long side 12b of the package 12 in plan view. In this case, the straight line L2 is a straight line that passes through the center position 12d of the other long side 12b of the package 12 and the corner 12e of the package 12 described above. In the first connecting portion 131, a portion protruding outward (toward the -Z 'direction in FIG. 3) from a straight line extending the short side of the package 12 toward the supporting portion 101 is formed in a substantially triangular shape. Note that the entire outer edge 131c may be formed along the straight line L2, but a portion of the outer edge 131c on the support portion 101 side may be formed in a curved shape.

  The inner edge 131d of the first connecting portion 131, that is, the edge closer to the center position 12c of the long side 12a of the package 12 (the + Z 'direction side in FIG. 3) is the edge 131g on the support portion 101 side. It protrudes inward (in the + Z ′ direction side in FIG. 3) in plan view from the edge 131h on the long side 12a side of the package 12. In other words, the edge 131g on the support portion 101 side is provided closer to the straight line L1 in plan view than the edge 131h on the long side 12a side of the package 12. The distance W15 between the edge 131g on the support portion 101 side and the straight line L1 is smaller than the distance W16 between the edge 131h on the long side 12a side and the straight line L1 (W15 <W16).

  In the present embodiment, the inner edge 131d of the first connecting portion 131 is formed in a curved shape. Specifically, in the inner edge 131d, a portion between the edge 131g on the support portion 101 side and the edge 131h on the long side 12a side, in other words, a portion other than both ends is provided with a corner. There is no shape (shape without corners). In this case, the inner edge 131d is a part of an arc centered on the straight line L1. In a connection portion 12f between the inner edge 131d and the long side 12a of the package 12, an angle θ1 formed by a tangent to the inner edge 131d and the long side 12a of the package 12 is preferably less than 90 degrees. The inner edge 131d may be straight (for example, a shape symmetrical with the outer edge 131c), or may be a waveform in which a plurality of arcs are combined.

  A groove 133 is formed at an end 131b of the first connecting part 131 on the package 12 side. The groove 133 is provided along the long side 12 a of the package 12. That is, the groove 133 extends along the Z′-axis direction of the crystal wafer 100. The groove 133 extends from the connection portion 12f between the inner edge 131d and the long side 12a of the package 12 toward the corner 12e of the package 12 (toward the -Z 'direction in FIG. 3). In the present embodiment, the groove 133 does not reach the corner 12 e of the package 12, and the groove 133 is provided at a distance from the corner 12 e of the package 12. That is, the groove 133 does not reach the corner 12 e of the package 12, and the vicinity of the corner 12 e of the package 12 is a portion where the groove is not formed. The groove 133 may reach the corner 12 e of the package 12.

  As described above, the crystal wafer 100 has a configuration in which the first sealing member wafer 100B, the crystal diaphragm wafer 100A, and the second sealing member wafer 100C are stacked (see FIG. 4). ). The crystal vibration plate wafer 100A, the first sealing member wafer 100B, and the second sealing member wafer 100C have the same shape as the above-described crystal wafer 100 (see FIG. 2) in plan view.

  As shown in FIG. 4, the crystal vibration plate wafer 100A has a configuration in which a plurality of the above-described crystal vibration plates 2 (see FIGS. 8 and 9) are assembled. In the example of FIG. 4, a plurality of quartz plates 2 are arranged in a matrix in the quartz plate wafer 100 </ b> A, and are arranged in a vertical direction (X-axis direction in FIG. 4) and a lateral direction (Z′-axis direction in FIG. 4). 8) are arranged, and a total of 64 quartz vibrating plates 2 are provided. Then, in the crystal vibration plate wafer 100A, the crystal vibration plate 2 is supported by the supporting portion 101A by the first and second connecting portions 131A and 132A, as in the case of the crystal wafer 100 described above. Both ends of the support portion 101A are integrally connected to the frame portion 102A. Grooves (slits) 133A, 133A are formed at the ends of the first and second connecting portions 131A, 132A on the side of the quartz plate 2. The grooves 133A, 133A are preferably formed on both surfaces of the crystal diaphragm wafer 100A, but may be formed on at least one surface. The above-described vibrating portion 22, outer frame portion 23, first excitation electrode 221, second excitation electrode 222, vibration-side first bonding pattern 251, vibration The side second bonding pattern 252, the first through hole 26, and the like are formed, but are not shown in FIG.

  As shown in FIG. 4, the first sealing member wafer 100B has a configuration in which a plurality of the above-described first sealing members 3 (see FIGS. 6 and 7) are assembled. In the example of FIG. 4, in the first sealing member wafer 100B, a plurality of first sealing members 3 are arranged in a matrix, and are arranged in a vertical direction (X-axis direction in FIG. 4) and a horizontal direction (in FIG. 4). Eight first sealing members 3 are arranged in the Z′-axis direction), and a total of 64 first sealing members 3 are provided. Then, in the first sealing member wafer 100B, the first sealing member 3 is supported by the supporting portion 101B by the first and second connecting portions 131B and 132B, as in the case of the quartz crystal wafer 100 described above. I have. Both ends of the support portion 101B are integrally connected to the frame portion 102B. Grooves 133B, 133B are formed at ends of the first and second connecting portions 131B, 132B on the first sealing member 3 side. The grooves 133B, 133B are preferably formed on both surfaces of the first sealing member wafer 100B, but may be formed on at least one surface. The first sealing member 3 of the first sealing member wafer 100B is formed with the sealing-side first bonding pattern 321, the wiring pattern 33, the connecting bonding patterns 35 and 36, and the like. 4, illustration is omitted.

  As shown in FIG. 4, the second sealing member wafer 100C has a configuration in which a plurality of the above-described second sealing members 4 (see FIGS. 10 and 11) are assembled. In the example of FIG. 4, in the second sealing member wafer 100C, a plurality of second sealing members 4 are arranged in a matrix, and are arranged in a vertical direction (X-axis direction in FIG. 4) and a horizontal direction (in FIG. 4). Eight second sealing members 4 are arranged in the Z′-axis direction), and a total of 64 second sealing members 4 are provided. Then, in the second sealing member wafer 100C, the second sealing member 4 is supported by the supporting portion 101C by the first and second connecting portions 131C and 132C, as in the case of the quartz crystal wafer 100 described above. I have. Both ends of the support portion 101C are integrally connected to the frame portion 102C. Grooves 133C, 133C are formed at the ends of the first and second connecting portions 131C, 132C on the second sealing member 4 side. The grooves 133C, 133C are preferably formed on both surfaces of the second sealing member wafer 100C, but may be formed on at least one surface. Each of the second sealing members 4 of the second sealing member wafer 100C has the above-described sealing-side second bonding pattern 421, one external electrode terminal 431, another external electrode terminal 432, the second through hole 45, Although the third through holes 46 and the like are formed, they are not shown in FIG.

  Then, the first sealing member wafer 100B and the second sealing member wafer 100C are laminated and joined via the quartz-crystal vibrating plate wafer 100A, and as shown in FIG. A crystal wafer 100 in which a plurality of packages 12 of the vibrator 10 are assembled is formed. In this case, the first and second connecting portions 131 and 132 of the crystal wafer 100 are the same as the first and second connecting portions 131B and 132B of the first sealing member wafer 100B and the first and second connecting portions 131B and 132B of the crystal diaphragm wafer 100A. The second connection portions 131A and 132A and the first and second connection portions 131C and 132C of the second sealing member wafer 100C are stacked. The first and second connection portions 131B and 132B of the first sealing member wafer 100B, the first and second connection portions 131A and 132A of the crystal vibration plate wafer 100A, and the first of the second sealing member wafer 100C. The second connecting portions 131C and 132C have the same configuration as the first and second connecting portions 131 and 132 of the crystal wafer 100 described above (see FIG. 3). The first and second connection portions 131B and 132B of the first sealing member wafer 100B, the first and second connection portions 131A and 132A of the crystal vibration plate wafer 100A, and the first of the second sealing member wafer 100C. , The second connecting portions 131C and 132C are provided at positions substantially matching in plan view.

  The grooves 133 and 133 of the crystal wafer 100 include grooves 133B and 133B formed on at least one surface of the first sealing member wafer 100B, and grooves 133A and 133A formed on at least one surface of the crystal vibration plate wafer 100A. And a groove 133C formed on at least one surface of the second sealing member wafer 100C. The grooves 133B and 133B of the first sealing member wafer 100B, the grooves 133A and 133A of the crystal vibration plate wafer 100A, and the grooves 133C and 133C of the second sealing member wafer 100C are the same as the grooves 133 of the crystal wafer 100 described above. , 133.

  Next, each step of the method for manufacturing the crystal resonator 10 illustrated in FIG. 1 will be described.

  The first sealing member wafer forming step (ST11) is a step of forming the first sealing member wafer 100B as shown in FIG. As described above, the first sealing member wafer 100 </ b> B has a configuration in which a plurality of first sealing members 3 each having a substantially rectangular shape in a plan view are gathered. Are connected to the supporting portion 101B provided on one side of the first sealing member 3 in plan view and apart from the first sealing member 3 via the first and second connecting portions 131B and 132B. Configuration.

  In the first sealing member wafer forming step, the first sealing member 3 of the first sealing member wafer 100 </ b> B and the support portion are formed by, for example, performing wet etching on a quartz crystal plate (AT cut quartz plate). 101B, a frame part 102B, first and second connecting parts 131B and 132B, and grooves 133B and 133B are formed. In each of the first sealing members 3, for example, an underlying PVD is formed by a PVD method such as vacuum evaporation, sputtering, ion plating, MBE, or laser ablation (for example, a film forming method for patterning in processing such as photolithography). By forming a film or an electrode PVD film, the sealing-side first bonding pattern 321, the connection bonding patterns 35 and 36, and the wiring pattern 33 are formed. Here, the sealing-side first bonding pattern 321, the connection bonding patterns 35 and 36, and the wiring pattern 33 of the other main surface 312 of each first sealing member 3 can have the same configuration. In this case, In the same process, the sealing-side first bonding pattern 321, the connection bonding patterns 35 and 36, and the wiring pattern 33 can be collectively formed.

  The crystal vibration plate wafer forming step (ST12) is a step of forming a crystal vibration plate wafer 100A as shown in FIG. As described above, the quartz-crystal-vibrating-plate wafer 100A has a configuration in which a plurality of quartz-crystal vibrating plates 2 having a substantially rectangular shape in a plan view are assembled. It is configured to be connected to a supporting portion 101A provided on one side of the diaphragm 2 so as to be separated from the crystal diaphragm 2 via first and second connecting portions 131A and 132A.

  In the crystal vibration plate wafer forming step, for example, wet etching is performed on a quartz crystal plate (AT-cut crystal plate), whereby each of the crystal vibration plates 2, the support portion 101A, the frame portion 102A of the crystal vibration plate wafer 100A, First and second connecting portions 131A and 132A and grooves 133A and 133A are formed. In each of the quartz vibrating plates 2, for example, by performing wet etching, a space 22 b between the vibrating portion 22 and the outer frame portion 23 and the first through hole 26 are formed.

  Further, in each of the quartz vibrating plates 2, for example, a base PVD film or a PVD method (eg, a film forming method for patterning in processing such as photolithography) such as vacuum evaporation, sputtering, ion plating, MBE, or laser ablation is used. By forming the electrode PVD film, the first excitation electrode 221, the second excitation electrode 222, the first extraction electrode 223, the second extraction electrode 224, the vibration side first bonding pattern 251, the vibration side second bonding pattern 252, and The connection joining patterns 27, 28, 264, 265 are formed. Here, the first excitation electrode 221, the first extraction electrode 223, the vibration side first bonding pattern 251, and the connection bonding patterns 27 and 264 on one main surface 211 of each crystal vibration plate 2 may have the same configuration. In this case, the first excitation electrode 221, the first extraction electrode 223, the vibration-side first bonding pattern 251, and the connection bonding patterns 27 and 264 can be collectively formed in the same process. Similarly, the second excitation electrode 222, the second extraction electrode 224, the vibration-side second bonding pattern 252, and the connecting bonding patterns 28 and 265 on the other main surface 212 of each crystal vibration plate 2 may have the same configuration. In this case, in this case, the second excitation electrode 222, the second extraction electrode 224, the vibration-side second bonding pattern 252, and the connecting bonding patterns 28 and 265 can be collectively formed by the same process.

  The second sealing member wafer forming step (ST13) is a step of forming the second sealing member wafer 100C as shown in FIG. As described above, the second sealing member wafer 100 </ b> C has a configuration in which a plurality of second sealing members 4 having a substantially rectangular shape in a plan view are assembled. Is connected to the supporting portion 101C provided on one side of the second sealing member 4 in plan view and apart from the second sealing member 4 via the first and second connecting portions 131C and 132C. Configuration.

  In the second sealing member wafer forming step, each of the second sealing members 4 of the second sealing member wafer 100 </ b> C and the support portion are subjected to, for example, wet etching on a quartz crystal plate (AT cut quartz plate). 101C, a frame part 102C, first and second connecting parts 131C and 132C, and grooves 133C and 133C are formed. In each of the second sealing members 4, for example, the second through hole 45 and the third through hole 46 are formed by performing wet etching.

  Further, in each of the second sealing members 4, an underlying PVD is formed by a PVD method (for example, a film forming method for patterning in processing such as photolithography) such as vacuum evaporation, sputtering, ion plating, MBE, or laser ablation. By forming a film or an electrode PVD film, a sealing-side second bonding pattern 421, one external electrode terminal 431, another external electrode terminal 432, and connection bonding patterns 453 and 463 are formed. Here, the sealing-side second bonding pattern 421 and the connecting bonding patterns 453 and 463 of the one main surface 411 of each second sealing member 4 can have the same configuration. In this case, the same process is used. The sealing-side second bonding pattern 421 and the connection bonding patterns 453 and 463 can be collectively formed.

  The laminating step (ST14) includes the first sealing member wafer 100B formed in the first sealing member wafer forming step (ST11) and the quartz vibrating plate formed in the quartz vibrating plate wafer forming step (ST12). In this step, the quartz wafer 100 is formed by laminating the wafer 100A for sealing and the wafer 100C for second sealing member formed in the second sealing member wafer forming step (ST13). That is, in the laminating step, each first sealing member 3 of the first sealing member wafer 100B, each crystal vibrating plate 2 of the crystal vibrating plate wafer 100A, and each second sealing member 3 of the second sealing member wafer 100C. The sealing member 4 is laminated.

  Specifically, the first bonding pattern 251 on the vibrating side of each crystal vibrating plate 2 of the wafer 100A for a quartz vibrating plate, and the first bonding pattern on the sealing side of each first sealing member 3 of the first wafer 100B for a sealing member. The pattern 321 is superposed and diffusion bonded, and the vibration side second bonding pattern 252 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and each second sealing member of the second sealing member wafer 100C. Diffusion bonding is performed in a state where the fourth sealing-side second bonding pattern 421 is overlapped.

  In addition, the connection bonding pattern 264 of each crystal vibration plate 2 of the crystal diaphragm wafer 100A and the connection bonding pattern 35 of each first sealing member 3 of the first sealing member wafer 100B are diffusion bonded. Diffusion bonding is performed between the connection bonding pattern 27 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 36 of each first sealing member 3 of the first sealing member wafer 100B. The connection bonding pattern 265 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 453 of each second sealing member 4 of the second sealing member wafer 100C are diffusion bonded. Diffusion bonding is performed between the connection bonding pattern 28 of each crystal vibration plate 2 of the crystal vibration plate wafer 100A and the connection bonding pattern 463 of each second sealing member 4 of the second sealing member wafer 100C.

  In the laminating step, after each first sealing member 3 of the first sealing member wafer 100B is bonded to each crystal vibration plate 2 of the crystal vibration plate wafer 100A, each of the quartz vibration plate wafers 100A is bonded. The crystal vibration plate 2 may be bonded to each of the second sealing members 4 of the second sealing member wafer 100C, or each of the crystal vibration plates 2 of the crystal vibration plate wafer 100A may be bonded to the second sealing member 100A. After bonding the second sealing members 4 of the stopper member wafer 100C, the respective first sealing members 3 of the first sealing member wafer 100B and the respective crystal vibrating plates 2 of the crystal vibrating plate wafer 100A. May be joined.

  By the above-described laminating step, a crystal wafer 100 in which a plurality of packages 12 of a substantially rectangular parallelepiped crystal resonator 10 are assembled is formed. In each package 12, the first sealing member 3 and the quartz plate 2 have a gap of 1.00 μm or less, and the second sealing member 4 and the quartz plate 2 have a gap of 1.00 μm or less. Have. That is, the thickness of the bonding material 11 between the first sealing member 3 and the crystal vibration plate 2 is 1.00 μm or less, and the thickness of the bonding material 11 between the second sealing member 4 and the crystal vibration plate 2 is The thickness is 1.00 μm or less (specifically, 0.15 μm to 1.00 μm in the Au—Au junction of the present embodiment). For comparison, the thickness of the conventional metal paste sealing material using Sn is 5 μm to 20 μm.

  In the crystal wafer 100 after the laminating step, the first connecting portion 131B of each first sealing member 3 of the first sealing member wafer 100B and the first connecting portion of each crystal vibrating plate 2 of the crystal vibrating plate wafer 100A. 131A and the 1st connection part 131C of each 2nd sealing member 4 of 100C of 2nd sealing member wafers are provided in the position which substantially matches in planar view. The second connecting portion 132B of each first sealing member 3 of the first sealing member wafer 100B, the second connecting portion 132A of each crystal vibration plate 2 of the crystal vibration plate wafer 100A, and the second sealing member The second connecting portion 132C of each second sealing member 4 of the wafer 100C is provided at a position substantially matching in plan view.

  In the singulation step (ST15), each package 12 is cut off (separated) from the crystal wafer 100 by pressing the first sealing member 3 of each package 12 of the crystal wafer 100 with, for example, a rod-shaped pressing member. Then, the package 12 is singulated. At this time, it is preferable to press a portion of the package 12 (first sealing member 3) opposite to the portion where the first and second connecting portions 131 and 132 are provided. Specifically, it is preferable to press the center position 12d (see FIG. 3) of the other long side 12b of the package 12.

  According to the present embodiment, in the singulation process, each package 12 of the crystal unit 10 can be easily singulated from the crystal wafer 100 in which a plurality of the packages 12 are assembled by folding. Hereinafter, this point will be described.

  In the singulation step, the package 12 is separated into individual pieces by pressing a portion of the crystal wafer 100 opposite to the portion where the first and second connecting portions 131 and 132 are provided. It has become. At this time, the first and second connecting portions 131A, 132A, 131B, 132B, 131C, 132C are provided on the quartz vibrating plate 2, the first sealing member 3, and the second sealing member 4 of each package 12, respectively. Therefore, each of the quartz vibrating plate 2, the first sealing member 3, and the second sealing member 4 can be easily separated from each other in the first and second connecting portions 131A, 132A, 131B, 132B, 131C, and 132C. Can be. More specifically, at the connection point between the first and second connecting portions 131A and 132A of the wafer 100A for the crystal vibration plate and the crystal vibration plate 2, that is, at one long side of the crystal vibration plate 2, the crystal vibration plate 2 The first and second connecting portions 131A and 132A can be separated. Similarly, at the connection point between the first and second connection portions 131B and 132B of the first sealing member wafer 100B and the first sealing member 3, that is, at one long side of the first sealing member 3, The first sealing member 3 can be separated from the first and second connecting portions 131B and 132B. At the connection point between the first and second connecting portions 131C and 132C of the second sealing member wafer 100C and the second sealing member 4, that is, at one long side of the second sealing member 4, the second sealing is performed. The member 4 can be separated from the first and second connecting portions 131C and 132C. Therefore, each package 12 can be easily separated from the crystal wafer 100 by cutting.

  Further, when the wafer is cut off in the singulation process, the stress due to the pressing is caused by the inner edge 131 d of the first connecting portion 131 (the same applies to the second connecting portion 132) of the crystal wafer 100 and the long side 12 a of the package 12. Is most easily concentrated on the connecting portion 12f. Therefore, in the present embodiment, breakage is generated in the quartz wafer 100 starting from the connection portion 12f, and the break is caused to proceed in a substantially straight line along the Z′-axis direction of the quartz wafer 100, so that the package 12 Fragmentation is facilitated.

  In the present embodiment, the width W11 of the end 131a of the first connecting portion 131 on the support portion 101 side is the long side of the package 12 (the quartz plate 2, the first sealing member 3, and the second sealing member 4). The width W12 of the end 131b on the 12a side is larger than the width W12 of the end 131b of the first connecting portion 131. Also, it is provided at a position far from the center position 12c of the long side 12a of the package 12 in plan view. In addition, a groove 133 extending in the Z′-axis direction is provided at the end 131b on the long side 12a side of the first connecting portion 131. Thereby, in the singulation process, the break generated from the connection portion 12f as a starting point can be smoothly advanced along the Z′-axis direction of the crystal wafer 100, and the package 12 can be easily separated from the crystal wafer 100. The occurrence of breakage marks such as cracking and chipping can be suppressed, and the occurrence of poor appearance of the package 12 can be suppressed.

  Further, the pressing force (pressing force) required to break off the package 12 (the quartz vibrating plate 2, the first sealing member 3, and the second sealing member 4) can be reduced by the groove portion 133, and individualization is performed. Damage to the package 12 at the time of breaking off in the process can be reduced. In this case, the grooves 133B, 133B are formed on both surfaces of the first sealing member wafer 100B, the grooves 133A, 133A are formed on both surfaces of the crystal vibration plate wafer 100A, and further, the second sealing member wafer 100C is formed. By forming the grooves 133C on both surfaces, damage to the package 12 at the time of breaking can be further reduced.

  The groove 133 is formed along a direction perpendicular to the X-axis direction of the crystal wafer 100 (in this case, the Z′-axis direction), and the groove 133 is formed in the package 12 (the crystal vibrating plate 2, the first sealing member 3). Since the groove 133 is formed at a distance from the corner 12 e of the second sealing member 4), when the groove 133 is formed by wet etching, the corner 12 e of the package 12 is lost due to the anisotropy of the crystal wafer 100 ( Chamfering) can be suppressed.

  Further, since the inner edge 131d of the first connecting portion 131 has a shape having no corners at portions other than both ends, the inner edge 131d and the package 12 (the crystal diaphragm 2, the first sealing member 3, The stress at the time of breaking can be reliably concentrated on the connection portion 12f with the long side 12a of the second sealing member 4), and the breakage of the quartz crystal wafer 100 can be reliably generated at the connection portion 12f.

  Also, since the first and second connecting portions 131 and 132 are provided on the long side 12a on the + X direction side of the package 12 (the crystal vibration plate 2, the first sealing member 3, and the second sealing member 4). In addition, when performing wet etching, it is possible to suppress the occurrence of chipping (chamfering) at the corner portion on the + X direction side of the vibrating portion 22 (see FIG. 8) of the crystal vibrating plate 2 due to the anisotropy of the crystal wafer 100. That is, the vibrating part 22 can be formed in a shape closer to a rectangle than when the first and second connecting parts 131 and 132 are provided on the long side 12b on the −X direction side of the package 12.

  Here, in the singulation step, when the vicinity of the center position 12d of the other long side 12b of the package 12 is pressed, a force for deforming the package 12 is applied to the pressed portion (here, the long side 12b of the package 12). (A center position 12d) and a connecting point of the first and second connecting portions 131 and 132 to the support portion 101 side (here, an outer edge 131c of the outer edge 131c on the support portion 101 side). Is considered to have the largest effect on the straight line L2). Then, in the region inside the straight line (tension line), it is considered that the deformation due to the pressing and the breakage (destruction) accompanying the deformation occur, and as described above, the breakage is generated with the connection portion 12f as the starting point, and the crystal is generated. It is possible to cause the fracture to proceed substantially linearly along the Z′-axis direction of the wafer 100. That is, in the region inside the tension line, it is possible to control the breakage or the like due to the pressing to some extent. On the other hand, in the region outside the tension line, it is considered that the shape is distorted, and the deformation or fracture (destruction) affected by the crystal orientation, state, and other external factors is generated. Unlike the area inside the line, it may occur at an unexpected position and direction, and it is considered difficult to control.

  In the present embodiment, since the outer edge 131c of the first connecting portion 131 (the same applies to the second connecting portion 132) is provided along the straight line L2 corresponding to the tension line in plan view, folding is performed. A location that needs to be broken for removal, specifically, a location between the corner 12e of the package 12 (the quartz plate 2, the first sealing member 3, and the second sealing member 4) and the connection portion 12f. Can be included in the area inside the tension line (straight line L2). Thereby, breakage can be generated only in a portion necessary for the breaking, and occurrence of poor appearance of the package 12 can be suppressed.

  In the above embodiment, the crystal resonator device is a crystal resonator. However, the present invention can be applied to a crystal resonator device (for example, a crystal oscillator) other than the crystal resonator.

  In the above-described embodiment, the first and second connecting portions 131 and 132 are provided on the long side 12a of the package 12 (the quartz plate 2, the first sealing member 3, and the second sealing member 4). The first and second connecting portions may be provided on the short side of the package 12.

  The present invention may be embodied in various other forms without departing from its spirit, spirit or essential characteristics. Therefore, the above-described embodiment is merely an example in every aspect, and should not be interpreted in a limited manner. The scope of the present invention is defined by the claims, and is not limited by the text of the specification. Furthermore, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  INDUSTRIAL APPLICABILITY The present invention is applicable to a method for manufacturing a crystal resonator or a crystal resonator device such as a crystal oscillator.

REFERENCE SIGNS LIST 100 Quartz wafer 10 Quartz resonator 12 Package 100A Quartz diaphragm wafer 2 Quartz diaphragm 101A Support section 131A First connection section 132A Second connection section 133A Groove section 100B First sealing member wafer 3 First sealing member 101B Support Part 131B First connecting part 132B Second connecting part 133B Groove part 100C Second sealing member wafer 4 Second sealing member 101C Support part 131C First connecting part 132C Second connecting part 133C Groove part

Claims (6)

The first sealing member wafer formed in the first sealing member wafer forming step, the crystal diaphragm wafer formed in the crystal diaphragm wafer forming step, and the second sealing member wafer forming step. A crystal vibrating device, comprising: a laminating step of forming a quartz wafer by laminating the formed second sealing member wafer; and a singulating step of singulating a package of the quartz vibrating device from the quartz wafer. The method for producing
In the first sealing member wafer forming step, a plurality of first sealing members having a substantially rectangular shape in a plan view are assembled, and each first sealing member is on one side of the first sealing member in a plan view. Forming the first sealing member wafer connected to the first sealing member support portion provided separately from the first sealing member via first and second connecting portions;
In the first sealing member wafer after the first sealing member wafer forming step, one end of the first sealing member of each of the first and second connecting portions is provided with the second sealing member. A groove is formed along one side of the one sealing member, and the groove is formed on an inner edge of the first and second connecting portions on a side closer to a center position of the one side of the first sealing member, From the connection portion with one side of the sealing member, each extends toward the corner of the first sealing member, and each groove does not reach the corner of the first sealing member. ,
In the crystal vibration plate wafer forming step, a plurality of substantially rectangular crystal vibration plates in a plan view are assembled, and each crystal vibration plate is separated from the crystal vibration plate on one side of the crystal vibration plate in a plan view. Forming a wafer for the quartz diaphragm connected to the supporting portion for the quartz diaphragm provided through the first and second connecting portions,
In the quartz-crystal-diaphragm wafer after the quartz-crystal-diaphragm-wafer forming step, one end of the first and second connection portions on one side of the quartz-crystal plate is formed along one side of the quartz-crystal plate. A groove portion is formed, and the groove portion is formed from a connection portion between an inner edge of the first and second connecting portions on a side closer to a center position of one side of the quartz plate and one side of the quartz plate. Each of the grooves extends toward the corner of the quartz plate, and each groove does not reach the corner of the quartz plate,
In the second sealing member wafer forming step, a plurality of second sealing members having a substantially rectangular shape in a plan view are assembled, and each of the second sealing members is on one side of the second sealing member in a plan view. Forming the second sealing member wafer connected to the second sealing member support portion provided separately from the second sealing member via the first and second connecting portions;
In the second sealing member wafer after the second sealing member wafer forming step, the first and second connecting portions have respective ends of the one side of the second sealing member. A groove is formed along one side of the second sealing member, and the groove is formed on the inner edge of the first and second connecting portions on the side closer to the center of the one side of the second sealing member; From the connection with one side of the sealing member, each extends toward the corner of the second sealing member, and each groove does not reach the corner of the second sealing member. ,
In the laminating step, the first sealing member of the first sealing member wafer, the quartz vibration plate of the quartz vibration plate wafer, and the second sealing member of the second sealing member wafer By stacking a plurality, the package of the crystal vibrating device forms a plurality, the assembled quartz wafer,
In the crystal wafer after the laminating step, the first connection portion of the first sealing member wafer, the first connection portion of the crystal vibration plate wafer, and the second connection portion of the second sealing member wafer A first connection portion provided at a position substantially coinciding in plan view, and the second connection portion of the first sealing member wafer, and the second connection portion of the crystal vibration plate wafer; The second connection portion of the second sealing member wafer is provided at a position substantially coinciding in plan view,
In the singulation step, each package is cut off from the crystal wafer by pressing a portion of the first sealing member on the other side opposite to the one side with a pressing member. Characteristic method of manufacturing a crystal vibrating device.   The method for manufacturing a crystal resonator device according to claim 1,
  Each groove formed on the first sealing member wafer, each groove formed on the crystal vibration plate wafer, and each groove formed on the second sealing member wafer are X of the crystal wafer. A method for manufacturing a crystal vibrating device, wherein the method is formed along a direction perpendicular to an axial direction.   The method for manufacturing a crystal resonator device according to claim 1,
  An inner edge of each of the first and second connecting portions formed on the first sealing member wafer, an inner edge of each of the first and second connecting portions formed on the crystal diaphragm wafer, And a method of manufacturing a quartz-crystal vibrating device, wherein inner edges of the first and second connecting portions formed on the wafer for the second sealing member are formed in a curved shape. A method for manufacturing a crystal vibration device according to any one of claims 1 to 3 ,
The ends of the first and second connecting portions of the wafer for the crystal vibration plate on the side of the support portion have a larger width in plan view than the end of one side of the crystal vibration plate. ,
The end of the first and second connecting portions of the first sealing member wafer on the support portion side has a width in plan view greater than the end of one side of the first sealing member. It's getting bigger
Each of the first and second connecting portions of the second sealing member wafer has an end portion on the support portion side that has a width in plan view greater than an end portion on one side of the second sealing member. A method for manufacturing a crystal vibrating device, characterized in that it is enlarged. A method for manufacturing a crystal resonator device according to any one of claims 1 to 4 ,
An outer edge of each of the first and second connection portions of the wafer for the crystal vibration plate that is farther from a center position of one side of the crystal vibration plate is connected to a corner of the crystal vibration plate,
Outer edges of the first and second connection portions of the first sealing member wafer that are farther from a center position of one side of the first sealing member are formed at corners of the first sealing member. Concatenated,
Outer edges of the first and second connecting portions of the wafer for the second sealing member, which are farther from the center of one side of the second sealing member, are located at corners of the second sealing member. A method for manufacturing a crystal vibrating device, wherein the device is connected. The method for manufacturing a crystal resonator device according to claim 5 ,
The first and second connecting portions of the crystal diaphragm wafer are provided on one long side of the crystal diaphragm,
The first and second connection portions of the first sealing member wafer are provided on one long side of the first sealing member,
The first and second connecting portions of the second sealing member wafer are provided on one long side of the second sealing member,
The method of manufacturing a quartz crystal vibrating device, wherein in the singulation step, a center position of the other long side of the first sealing member is pressed.

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