JP6745103B2 - 半導体電気メッキ装置用のリップシールおよび接触要素 - Google Patents
半導体電気メッキ装置用のリップシールおよび接触要素 Download PDFInfo
- Publication number
- JP6745103B2 JP6745103B2 JP2015225338A JP2015225338A JP6745103B2 JP 6745103 B2 JP6745103 B2 JP 6745103B2 JP 2015225338 A JP2015225338 A JP 2015225338A JP 2015225338 A JP2015225338 A JP 2015225338A JP 6745103 B2 JP6745103 B2 JP 6745103B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sealing element
- contact
- elastomeric sealing
- elastomeric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 89
- 238000009713 electroplating Methods 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 claims description 334
- 238000007789 sealing Methods 0.000 claims description 216
- 238000007747 plating Methods 0.000 claims description 46
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 229920001971 elastomer Polymers 0.000 claims description 24
- 239000000806 elastomer Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 210000004185 liver Anatomy 0.000 claims 11
- 238000004587 chromatography analysis Methods 0.000 claims 3
- 230000008602 contraction Effects 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 67
- 238000003825 pressing Methods 0.000 description 39
- 238000000034 method Methods 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 29
- 239000000243 solution Substances 0.000 description 24
- 239000003792 electrolyte Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- 238000013461 design Methods 0.000 description 19
- 239000013536 elastomeric material Substances 0.000 description 12
- 230000007717 exclusion Effects 0.000 description 12
- 230000006835 compression Effects 0.000 description 11
- 238000007906 compression Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000012707 chemical precursor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 238000013515 script Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462085171P | 2014-11-26 | 2014-11-26 | |
| US62/085,171 | 2014-11-26 | ||
| US14/685,526 | 2015-04-13 | ||
| US14/685,526 US9988734B2 (en) | 2011-08-15 | 2015-04-13 | Lipseals and contact elements for semiconductor electroplating apparatuses |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016135912A JP2016135912A (ja) | 2016-07-28 |
| JP2016135912A5 JP2016135912A5 (ko) | 2018-12-27 |
| JP6745103B2 true JP6745103B2 (ja) | 2020-08-26 |
Family
ID=56040086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015225338A Active JP6745103B2 (ja) | 2014-11-26 | 2015-11-18 | 半導体電気メッキ装置用のリップシールおよび接触要素 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6745103B2 (ko) |
| KR (3) | KR102453908B1 (ko) |
| CN (2) | CN109137029B (ko) |
| TW (2) | TWI702311B (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180251907A1 (en) * | 2017-03-01 | 2018-09-06 | Lam Research Corporation | Wide lipseal for electroplating |
| US10612151B2 (en) * | 2018-02-28 | 2020-04-07 | Lam Research Corporation | Flow assisted dynamic seal for high-convection, continuous-rotation plating |
| JP6963524B2 (ja) * | 2018-03-20 | 2021-11-10 | キオクシア株式会社 | 電解メッキ装置 |
| JP7471778B2 (ja) * | 2019-03-29 | 2024-04-22 | 株式会社日本マイクロニクス | プローブカード |
| KR20220075236A (ko) * | 2019-10-04 | 2022-06-07 | 램 리써치 코포레이션 | 립시일 석출 (plate-out) 방지를 위한 웨이퍼 차폐 |
| KR20220107012A (ko) * | 2019-11-27 | 2022-08-01 | 램 리써치 코포레이션 | 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거 |
| JP7242516B2 (ja) * | 2019-12-13 | 2023-03-20 | 株式会社荏原製作所 | 基板ホルダ |
| CN115135618B (zh) * | 2021-10-18 | 2024-07-02 | 株式会社荏原制作所 | 镀覆方法及镀覆装置 |
| CN113846363B (zh) * | 2021-10-27 | 2022-09-23 | 上海戴丰科技有限公司 | 一种晶圆电镀挂具 |
| JP7264545B1 (ja) | 2022-02-22 | 2023-04-25 | 有限会社クズハラゴム | 部分メッキ治具 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6610190B2 (en) * | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| US6755946B1 (en) * | 2001-11-30 | 2004-06-29 | Novellus Systems, Inc. | Clamshell apparatus with dynamic uniformity control |
| US7033465B1 (en) * | 2001-11-30 | 2006-04-25 | Novellus Systems, Inc. | Clamshell apparatus with crystal shielding and in-situ rinse-dry |
| US6550484B1 (en) * | 2001-12-07 | 2003-04-22 | Novellus Systems, Inc. | Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing |
| JP3940648B2 (ja) * | 2002-08-07 | 2007-07-04 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウェハーのめっき装置 |
| US7087144B2 (en) * | 2003-01-31 | 2006-08-08 | Applied Materials, Inc. | Contact ring with embedded flexible contacts |
| US7005379B2 (en) * | 2004-04-08 | 2006-02-28 | Micron Technology, Inc. | Semiconductor processing methods for forming electrical contacts |
| US7985325B2 (en) * | 2007-10-30 | 2011-07-26 | Novellus Systems, Inc. | Closed contact electroplating cup assembly |
| US9512538B2 (en) * | 2008-12-10 | 2016-12-06 | Novellus Systems, Inc. | Plating cup with contoured cup bottom |
| JP5237924B2 (ja) * | 2008-12-10 | 2013-07-17 | ノベルス・システムズ・インコーポレーテッド | ベースプレート、及び電気メッキ装置 |
| US9228270B2 (en) * | 2011-08-15 | 2016-01-05 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US9309603B2 (en) * | 2011-09-14 | 2016-04-12 | Applied Materials, Inc | Component cleaning in a metal plating apparatus |
-
2015
- 2015-11-18 JP JP2015225338A patent/JP6745103B2/ja active Active
- 2015-11-19 KR KR1020150162613A patent/KR102453908B1/ko active IP Right Grant
- 2015-11-25 TW TW108143043A patent/TWI702311B/zh active
- 2015-11-25 TW TW104139051A patent/TWI681082B/zh active
- 2015-11-26 CN CN201810986262.8A patent/CN109137029B/zh active Active
- 2015-11-26 CN CN201510837221.9A patent/CN105624754B/zh active Active
-
2022
- 2022-10-06 KR KR1020220127998A patent/KR102641458B1/ko active IP Right Grant
-
2024
- 2024-02-22 KR KR1020240025954A patent/KR20240029754A/ko active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016135912A (ja) | 2016-07-28 |
| KR102453908B1 (ko) | 2022-10-11 |
| CN109137029B (zh) | 2021-01-01 |
| TW201629275A (zh) | 2016-08-16 |
| CN109137029A (zh) | 2019-01-04 |
| CN105624754A (zh) | 2016-06-01 |
| KR20240029754A (ko) | 2024-03-06 |
| TW202010881A (zh) | 2020-03-16 |
| KR20220141268A (ko) | 2022-10-19 |
| KR20160063252A (ko) | 2016-06-03 |
| TWI681082B (zh) | 2020-01-01 |
| CN105624754B (zh) | 2019-06-11 |
| KR102641458B1 (ko) | 2024-02-28 |
| TWI702311B (zh) | 2020-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6745103B2 (ja) | 半導体電気メッキ装置用のリップシールおよび接触要素 | |
| US11512408B2 (en) | Lipseals and contact elements for semiconductor electroplating apparatuses | |
| KR102082606B1 (ko) | 반도체 전기도금 장비를 위한 립씰 및 접촉 요소 | |
| US10066311B2 (en) | Multi-contact lipseals and associated electroplating methods | |
| US10053792B2 (en) | Plating cup with contoured cup bottom | |
| CN106337199B (zh) | 用于减少晶片粘着的集成的弹性体唇状密封件和杯底 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181114 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181114 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191112 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200210 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200707 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200803 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6745103 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |