JP6738078B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 15
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 9
- 229910021476 group 6 element Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910021480 group 4 element Inorganic materials 0.000 claims description 4
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- 238000001878 scanning electron micrograph Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
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- 239000010814 metallic waste Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
11 ガラス基板
12 裏面電極層
13 光吸収層
14 透明電極層
Claims (9)
- 第1の電極層と、
光透過性を有する第2の電極層と、
前記第1及び第2の電極層の間に設けられた光吸収層と、を備え、
前記光吸収層は、Si又はGeが添加されたI−III−VI2系多結晶カルコパイライト材料であり、
前記光吸収層内に前記I−III−VI 2 系多結晶カルコパイライト材料の多結晶の粒と粒の間に形成された被覆層が形成されていることを特徴とする太陽電池。 - 前記光吸収層は、バッファ層を介さず直接に前記第2の電極層の直下に形成されていることを特徴とする請求項1記載の太陽電池。
- 前記光吸収層は、厚さ30nm以下のバッファ層を介して前記第2の電極層の直下に形成されていることを特徴とする請求項1記載の太陽電池。
- 前記光吸収層は、層内全体で空乏層が均一に形成されていることを特徴とする請求項1乃至3のうちいずれか一項記載の太陽電池。
- 前記光吸収層は、Siが0.01〜0.5atm%のドーパント量で添加されたI−III−VI2系多結晶カルコパイライト材料であることを特徴とする請求項1乃至4のうちいずれか一項記載の太陽電池。
- 基板上に第1の電極層を形成する工程と、
前記第1の電極層上に、Si又はGeが添加されたI−III−VI2系多結晶カルコパイライト材料を用いた光吸収層を製膜する工程と、
前記光吸収層の上方に光透過性を有する第2の電極層を形成する工程と、を含む太陽電池の製造方法であって、
前記光吸収層を製膜する工程は、III族元素に対してI族元素の過剰域が形成される期間においてSi又はGeを添加する工程を有し、
前記光吸収層内に前記I−III−VI 2 系多結晶カルコパイライト材料の多結晶の粒と粒の間に形成された被覆層を形成することを特徴とする太陽電池の製造方法。 - 前記光吸収層を製膜する工程は、
前記第1の電極層上に、III族元素とVI族元素とを同時に蒸着する第一段階の蒸着と、
前記第一段階の蒸着により形成された前記III族元素及びVI族元素の化合物の上に、I族元素の過剰域が形成されるまで前記I族元素と前記VI族元素とを同時に蒸着する第二段階の蒸着と、
前記第二段階の蒸着終了後、前記III族元素及びVI族元素と共にIV族元素であるSi又はGeを同時に蒸着する第三段階の蒸着と、
を有することを特徴とする請求項6記載の太陽電池の製造方法。 - 前記III族元素はIn及びGaであり、前記VI族元素はSeであり、前記I族元素はCuであることを特徴とする請求項6又は7記載の太陽電池の製造方法。
- 前記第2の電極層を形成する工程は、前記光吸収層を製膜する工程の後に、バッファ層を形成する工程を含まずに、実行されることを特徴とする請求項6乃至8のうちいずれか一項記載の太陽電池の製造方法。
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JP2017035420 | 2017-02-27 | ||
JP2017035420 | 2017-02-27 | ||
PCT/JP2018/005581 WO2018155349A1 (ja) | 2017-02-27 | 2018-02-16 | 太陽電池及びその製造方法 |
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JPWO2018155349A1 JPWO2018155349A1 (ja) | 2019-11-14 |
JP6738078B2 true JP6738078B2 (ja) | 2020-08-12 |
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WO (1) | WO2018155349A1 (ja) |
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JPH11145500A (ja) * | 1997-11-11 | 1999-05-28 | Asahi Chem Ind Co Ltd | 不純物半導体の製造方法、p型半導体、n型半導体、半導体装置 |
KR101210046B1 (ko) * | 2011-10-17 | 2012-12-07 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP2014024717A (ja) * | 2012-07-27 | 2014-02-06 | Asahi Glass Co Ltd | Cu−In−Ga−Se太陽電池用ガラス板およびそれを用いた太陽電池とその製造方法 |
JP2015164164A (ja) * | 2014-02-28 | 2015-09-10 | 富士フイルム株式会社 | 光電変換素子および太陽電池 |
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