JP6728498B2 - 試験片を検査する方法および荷電粒子マルチビーム装置 - Google Patents
試験片を検査する方法および荷電粒子マルチビーム装置 Download PDFInfo
- Publication number
- JP6728498B2 JP6728498B2 JP2019529641A JP2019529641A JP6728498B2 JP 6728498 B2 JP6728498 B2 JP 6728498B2 JP 2019529641 A JP2019529641 A JP 2019529641A JP 2019529641 A JP2019529641 A JP 2019529641A JP 6728498 B2 JP6728498 B2 JP 6728498B2
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- Japan
- Prior art keywords
- charged particle
- particle beam
- lens
- primary charged
- beamlets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/103—Lenses characterised by lens type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1536—Image distortions due to scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/366,482 US10453645B2 (en) | 2016-12-01 | 2016-12-01 | Method for inspecting a specimen and charged particle multi-beam device |
| US15/366,482 | 2016-12-01 | ||
| PCT/EP2017/080506 WO2018099854A1 (en) | 2016-12-01 | 2017-11-27 | Method for inspecting a specimen and charged particle multi-beam device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019536250A JP2019536250A (ja) | 2019-12-12 |
| JP2019536250A5 JP2019536250A5 (enExample) | 2020-01-30 |
| JP6728498B2 true JP6728498B2 (ja) | 2020-07-22 |
Family
ID=60452669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019529641A Active JP6728498B2 (ja) | 2016-12-01 | 2017-11-27 | 試験片を検査する方法および荷電粒子マルチビーム装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10453645B2 (enExample) |
| EP (1) | EP3549153A1 (enExample) |
| JP (1) | JP6728498B2 (enExample) |
| KR (1) | KR102179897B1 (enExample) |
| CN (1) | CN110214361B (enExample) |
| TW (1) | TWI709992B (enExample) |
| WO (1) | WO2018099854A1 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL277822B2 (en) * | 2018-05-01 | 2024-08-01 | Asml Netherlands Bv | Multi-beam test rig |
| US10438769B1 (en) * | 2018-05-02 | 2019-10-08 | Kla-Tencor Corporation | Array-based characterization tool |
| DE102018115012A1 (de) | 2018-06-21 | 2019-12-24 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlsystem |
| TWI744671B (zh) * | 2018-08-03 | 2021-11-01 | 日商紐富來科技股份有限公司 | 電子光學系統及多射束圖像取得裝置 |
| EP3624167A1 (en) * | 2018-09-14 | 2020-03-18 | FEI Company | Multi-electron-beam imaging appartus with improved perormance |
| US10748739B2 (en) * | 2018-10-12 | 2020-08-18 | Kla-Tencor Corporation | Deflection array apparatus for multi-electron beam system |
| US10784070B2 (en) * | 2018-10-19 | 2020-09-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, field curvature corrector, and methods of operating a charged particle beam device |
| KR102677409B1 (ko) * | 2019-05-31 | 2024-06-25 | 에이에스엠엘 네델란즈 비.브이. | 다중 하전 입자 빔 장치 및 그 작동 방법 |
| DE102019004124B4 (de) | 2019-06-13 | 2024-03-21 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| US10923313B1 (en) * | 2019-10-17 | 2021-02-16 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method of operating a charged particle beam device |
| NL2024065B1 (en) * | 2019-10-21 | 2021-06-22 | Univ Delft Tech | Multi-beam charged particle source with alignment means |
| WO2021078352A1 (en) * | 2019-10-21 | 2021-04-29 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle beam device |
| TWI821618B (zh) * | 2019-12-19 | 2023-11-11 | 荷蘭商Asml荷蘭公司 | 藉由多光束裝置執行以形成樣本之影像的方法及相關的多光束裝置 |
| NL2024694B1 (en) * | 2020-01-17 | 2021-09-08 | Delmic Ip B V | Apparatus and method for projecting an array of multiple charged particle beamlets on a sample |
| US11257657B2 (en) * | 2020-02-18 | 2022-02-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device with interferometer for height measurement |
| KR20250144502A (ko) * | 2020-02-21 | 2025-10-10 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 |
| EP3882951A1 (en) * | 2020-03-19 | 2021-09-22 | FEI Company | Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets |
| US11380511B2 (en) * | 2020-03-24 | 2022-07-05 | Fei Company | Charged particle beam source |
| DE102020115183A1 (de) * | 2020-06-08 | 2021-12-09 | Carl Zeiss Multisem Gmbh | Teilchenstrahlsystem mit Multiquellensystem |
| EP3937205A1 (en) * | 2020-07-06 | 2022-01-12 | ASML Netherlands B.V. | Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method |
| EP4214736A2 (en) * | 2020-09-17 | 2023-07-26 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| US11699564B2 (en) * | 2020-10-23 | 2023-07-11 | Nuflare Technology, Inc. | Schottky thermal field emitter with integrated beam splitter |
| WO2022136064A1 (en) | 2020-12-23 | 2022-06-30 | Asml Netherlands B.V. | Charged particle optical device |
| US11705301B2 (en) * | 2021-01-19 | 2023-07-18 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam manipulation device and method for manipulating charged particle beamlets |
| US11869743B2 (en) * | 2021-05-11 | 2024-01-09 | Kla Corporation | High throughput multi-electron beam system |
| EP4095881A1 (en) * | 2021-05-25 | 2022-11-30 | ASML Netherlands B.V. | Charged particle device |
| JP7680923B2 (ja) * | 2021-09-16 | 2025-05-21 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法 |
| US11651934B2 (en) | 2021-09-30 | 2023-05-16 | Kla Corporation | Systems and methods of creating multiple electron beams |
| JP7105022B1 (ja) | 2022-03-31 | 2022-07-22 | 株式会社Photo electron Soul | 電子銃、電子線適用装置およびマルチ電子ビームの形成方法 |
| US20240212968A1 (en) * | 2022-12-23 | 2024-06-27 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Lens for a charged particle beam apparatus, charged particle beam apparatus, and method of focusing a charged particle beam |
| CN118588522B (zh) * | 2024-08-06 | 2024-11-08 | 北京惠然肯来科技中心(有限合伙) | 用于带电粒子束装置的载物单元及相关产品 |
| CN119517703B (zh) * | 2024-11-15 | 2025-10-31 | 深圳后浪实验室科技有限公司 | 一种离子束聚焦系统 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020145113A1 (en) * | 2001-04-09 | 2002-10-10 | Applied Materials, Inc. | Optical signal transmission for electron beam imaging apparatus |
| WO2004034044A1 (en) * | 2002-10-08 | 2004-04-22 | Applied Materials Israel, Ltd. | Methods and systems for process monitoring using x-ray emission |
| DE60236302D1 (de) * | 2002-12-17 | 2010-06-17 | Integrated Circuit Testing | Mehrachsige Verbundlinse, Strahlvorrichtung und Verfahren zur Anwendung dieser kombinierten Linse |
| EP2575144B1 (en) * | 2003-09-05 | 2017-07-12 | Carl Zeiss Microscopy GmbH | Particle-optical systems and arrangements and particle-optical components for such systems and arrangements |
| EP1753010B1 (en) * | 2005-08-09 | 2012-12-05 | Carl Zeiss SMS GmbH | Particle-optical system |
| JP5237734B2 (ja) | 2008-09-24 | 2013-07-17 | 日本電子株式会社 | 収差補正装置および該収差補正装置を備える荷電粒子線装置 |
| EP2676285B1 (en) * | 2011-02-18 | 2015-05-20 | Applied Materials Israel Ltd. | Focusing a charged particle imaging system |
| CN104520968B (zh) * | 2012-05-14 | 2017-07-07 | 迈普尔平版印刷Ip有限公司 | 带电粒子光刻系统和射束产生器 |
| NL2009053C2 (en) * | 2012-06-22 | 2013-12-24 | Univ Delft Tech | Apparatus and method for inspecting a surface of a sample. |
| EP2879155B1 (en) * | 2013-12-02 | 2018-04-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam system for high throughput EBI |
| NL2012780B1 (en) * | 2014-05-08 | 2016-02-23 | Univ Delft Tech | Apparatus and method for inspecting a sample using a plurality of charged particle beams. |
| US10236156B2 (en) | 2015-03-25 | 2019-03-19 | Hermes Microvision Inc. | Apparatus of plural charged-particle beams |
| US9607805B2 (en) | 2015-05-12 | 2017-03-28 | Hermes Microvision Inc. | Apparatus of plural charged-particle beams |
| KR102735949B1 (ko) * | 2015-09-23 | 2024-11-28 | 케이엘에이 코포레이션 | 다중 빔 주사 전자 현미경 검사 시스템에서의 초점 조정을 위한 방법 및 시스템 |
| US9984848B2 (en) * | 2016-03-10 | 2018-05-29 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device |
| US9922796B1 (en) * | 2016-12-01 | 2018-03-20 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle multi-beam device |
| US10176965B1 (en) * | 2017-07-05 | 2019-01-08 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets |
-
2016
- 2016-12-01 US US15/366,482 patent/US10453645B2/en active Active
-
2017
- 2017-11-27 WO PCT/EP2017/080506 patent/WO2018099854A1/en not_active Ceased
- 2017-11-27 EP EP17804193.5A patent/EP3549153A1/en active Pending
- 2017-11-27 JP JP2019529641A patent/JP6728498B2/ja active Active
- 2017-11-27 KR KR1020197018963A patent/KR102179897B1/ko active Active
- 2017-11-27 CN CN201780074730.8A patent/CN110214361B/zh active Active
- 2017-11-29 TW TW106141534A patent/TWI709992B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019536250A (ja) | 2019-12-12 |
| KR20190089963A (ko) | 2019-07-31 |
| US20180158642A1 (en) | 2018-06-07 |
| CN110214361A (zh) | 2019-09-06 |
| TWI709992B (zh) | 2020-11-11 |
| WO2018099854A1 (en) | 2018-06-07 |
| CN110214361B (zh) | 2022-01-28 |
| EP3549153A1 (en) | 2019-10-09 |
| TW201833968A (zh) | 2018-09-16 |
| KR102179897B1 (ko) | 2020-11-19 |
| US10453645B2 (en) | 2019-10-22 |
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