TWI709992B - 用於檢查試樣之方法以及帶電粒子多束裝置 - Google Patents

用於檢查試樣之方法以及帶電粒子多束裝置 Download PDF

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Publication number
TWI709992B
TWI709992B TW106141534A TW106141534A TWI709992B TW I709992 B TWI709992 B TW I709992B TW 106141534 A TW106141534 A TW 106141534A TW 106141534 A TW106141534 A TW 106141534A TW I709992 B TWI709992 B TW I709992B
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TW
Taiwan
Prior art keywords
charged particle
lens
particle beam
array
primary charged
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TW106141534A
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English (en)
Chinese (zh)
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TW201833968A (zh
Inventor
尤爾根 弗羅森
彼得 克路特
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以色列商應用材料以色列公司
代爾夫特理工大學
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW106141534A 2016-12-01 2017-11-29 用於檢查試樣之方法以及帶電粒子多束裝置 TWI709992B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/366,482 2016-12-01
US15/366,482 US10453645B2 (en) 2016-12-01 2016-12-01 Method for inspecting a specimen and charged particle multi-beam device

Publications (2)

Publication Number Publication Date
TW201833968A TW201833968A (zh) 2018-09-16
TWI709992B true TWI709992B (zh) 2020-11-11

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TW106141534A TWI709992B (zh) 2016-12-01 2017-11-29 用於檢查試樣之方法以及帶電粒子多束裝置

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Country Link
US (1) US10453645B2 (enExample)
EP (1) EP3549153A1 (enExample)
JP (1) JP6728498B2 (enExample)
KR (1) KR102179897B1 (enExample)
CN (1) CN110214361B (enExample)
TW (1) TWI709992B (enExample)
WO (1) WO2018099854A1 (enExample)

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US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement
KR102817129B1 (ko) 2020-02-21 2025-06-05 에이에스엠엘 네델란즈 비.브이. 하전 입자 검사 툴, 검사 방법
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KR102903956B1 (ko) * 2020-03-12 2025-12-24 칼 짜이스 멀티셈 게엠베하 멀티빔 생성 유닛 및 멀티빔 편향 유닛의 명백한 개선
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US11380511B2 (en) * 2020-03-24 2022-07-05 Fei Company Charged particle beam source
DE102020115183B4 (de) * 2020-06-08 2026-01-29 Carl Zeiss Multisem Gmbh Teilchenstrahlsystem mit Multiquellensystem sowie Mehrstrahl-Teilchenmikroskop
EP3937205A1 (en) * 2020-07-06 2022-01-12 ASML Netherlands B.V. Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method
KR20230067620A (ko) * 2020-09-17 2023-05-16 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 툴, 검사 방법
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter
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JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
CN118302838A (zh) * 2021-11-24 2024-07-05 Asml荷兰有限公司 用于电压对比度检查的带电粒子束装置及其方法
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Also Published As

Publication number Publication date
EP3549153A1 (en) 2019-10-09
KR102179897B1 (ko) 2020-11-19
JP2019536250A (ja) 2019-12-12
JP6728498B2 (ja) 2020-07-22
US20180158642A1 (en) 2018-06-07
KR20190089963A (ko) 2019-07-31
TW201833968A (zh) 2018-09-16
US10453645B2 (en) 2019-10-22
WO2018099854A1 (en) 2018-06-07
CN110214361B (zh) 2022-01-28
CN110214361A (zh) 2019-09-06

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