TWI709992B - 用於檢查試樣之方法以及帶電粒子多束裝置 - Google Patents

用於檢查試樣之方法以及帶電粒子多束裝置 Download PDF

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Publication number
TWI709992B
TWI709992B TW106141534A TW106141534A TWI709992B TW I709992 B TWI709992 B TW I709992B TW 106141534 A TW106141534 A TW 106141534A TW 106141534 A TW106141534 A TW 106141534A TW I709992 B TWI709992 B TW I709992B
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TW
Taiwan
Prior art keywords
charged particle
lens
particle beam
array
primary charged
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TW106141534A
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English (en)
Chinese (zh)
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TW201833968A (zh
Inventor
尤爾根 弗羅森
彼得 克路特
Original Assignee
以色列商應用材料以色列公司
代爾夫特理工大學
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Publication of TW201833968A publication Critical patent/TW201833968A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW106141534A 2016-12-01 2017-11-29 用於檢查試樣之方法以及帶電粒子多束裝置 TWI709992B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/366,482 US10453645B2 (en) 2016-12-01 2016-12-01 Method for inspecting a specimen and charged particle multi-beam device
US15/366,482 2016-12-01

Publications (2)

Publication Number Publication Date
TW201833968A TW201833968A (zh) 2018-09-16
TWI709992B true TWI709992B (zh) 2020-11-11

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TW106141534A TWI709992B (zh) 2016-12-01 2017-11-29 用於檢查試樣之方法以及帶電粒子多束裝置

Country Status (7)

Country Link
US (1) US10453645B2 (enExample)
EP (1) EP3549153A1 (enExample)
JP (1) JP6728498B2 (enExample)
KR (1) KR102179897B1 (enExample)
CN (1) CN110214361B (enExample)
TW (1) TWI709992B (enExample)
WO (1) WO2018099854A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL277822B2 (en) * 2018-05-01 2024-08-01 Asml Netherlands Bv Multi-beam test rig
US10438769B1 (en) * 2018-05-02 2019-10-08 Kla-Tencor Corporation Array-based characterization tool
DE102018115012A1 (de) 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
TWI744671B (zh) * 2018-08-03 2021-11-01 日商紐富來科技股份有限公司 電子光學系統及多射束圖像取得裝置
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
US10784070B2 (en) * 2018-10-19 2020-09-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, field curvature corrector, and methods of operating a charged particle beam device
KR102677409B1 (ko) * 2019-05-31 2024-06-25 에이에스엠엘 네델란즈 비.브이. 다중 하전 입자 빔 장치 및 그 작동 방법
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
US10923313B1 (en) * 2019-10-17 2021-02-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method of operating a charged particle beam device
NL2024065B1 (en) * 2019-10-21 2021-06-22 Univ Delft Tech Multi-beam charged particle source with alignment means
WO2021078352A1 (en) * 2019-10-21 2021-04-29 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle beam device
TWI821618B (zh) * 2019-12-19 2023-11-11 荷蘭商Ａｓｍｌ荷蘭公司 藉由多光束裝置執行以形成樣本之影像的方法及相關的多光束裝置
NL2024694B1 (en) * 2020-01-17 2021-09-08 Delmic Ip B V Apparatus and method for projecting an array of multiple charged particle beamlets on a sample
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement
KR20250144502A (ko) * 2020-02-21 2025-10-10 에이에스엠엘 네델란즈 비.브이. 검사 장치
EP3882951A1 (en) * 2020-03-19 2021-09-22 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
US11380511B2 (en) * 2020-03-24 2022-07-05 Fei Company Charged particle beam source
DE102020115183A1 (de) * 2020-06-08 2021-12-09 Carl Zeiss Multisem Gmbh Teilchenstrahlsystem mit Multiquellensystem
EP3937205A1 (en) * 2020-07-06 2022-01-12 ASML Netherlands B.V. Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method
EP4214736A2 (en) * 2020-09-17 2023-07-26 ASML Netherlands B.V. Charged particle assessment tool, inspection method
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter
WO2022136064A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device
US11705301B2 (en) * 2021-01-19 2023-07-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam manipulation device and method for manipulating charged particle beamlets
US11869743B2 (en) * 2021-05-11 2024-01-09 Kla Corporation High throughput multi-electron beam system
EP4095881A1 (en) * 2021-05-25 2022-11-30 ASML Netherlands B.V. Charged particle device
JP7680923B2 (ja) * 2021-09-16 2025-05-21 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams
JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
US20240212968A1 (en) * 2022-12-23 2024-06-27 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Lens for a charged particle beam apparatus, charged particle beam apparatus, and method of focusing a charged particle beam
CN118588522B (zh) * 2024-08-06 2024-11-08 北京惠然肯来科技中心(有限合伙) 用于带电粒子束装置的载物单元及相关产品
CN119517703B (zh) * 2024-11-15 2025-10-31 深圳后浪实验室科技有限公司 一种离子束聚焦系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201401330A (zh) * 2012-05-14 2014-01-01 Mapper Lithography Ip Bv 帶電粒子微影系統和射束產生器
CN103688333A (zh) * 2011-02-18 2014-03-26 应用材料以色列公司 聚焦带电粒子成像系统
US20160284505A1 (en) * 2015-03-25 2016-09-29 Hermes Microvision Inc. Apparatus of Plural Charged-Particle Beams
US20160336142A1 (en) * 2015-05-12 2016-11-17 Hermes Microvision Inc. Apparatus of Plural Charged-Particle Beams
WO2017053812A1 (en) * 2015-09-23 2017-03-30 Kla-Tencor Corporation Method and system for focus adjustment a multi-beam scanning electron microscopy system
US9922796B1 (en) * 2016-12-01 2018-03-20 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
WO2004034044A1 (en) * 2002-10-08 2004-04-22 Applied Materials Israel, Ltd. Methods and systems for process monitoring using x-ray emission
DE60236302D1 (de) * 2002-12-17 2010-06-17 Integrated Circuit Testing Mehrachsige Verbundlinse, Strahlvorrichtung und Verfahren zur Anwendung dieser kombinierten Linse
EP2575144B1 (en) * 2003-09-05 2017-07-12 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
EP1753010B1 (en) * 2005-08-09 2012-12-05 Carl Zeiss SMS GmbH Particle-optical system
JP5237734B2 (ja) 2008-09-24 2013-07-17 日本電子株式会社 収差補正装置および該収差補正装置を備える荷電粒子線装置
NL2009053C2 (en) * 2012-06-22 2013-12-24 Univ Delft Tech Apparatus and method for inspecting a surface of a sample.
EP2879155B1 (en) * 2013-12-02 2018-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI
NL2012780B1 (en) * 2014-05-08 2016-02-23 Univ Delft Tech Apparatus and method for inspecting a sample using a plurality of charged particle beams.
US9984848B2 (en) * 2016-03-10 2018-05-29 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103688333A (zh) * 2011-02-18 2014-03-26 应用材料以色列公司 聚焦带电粒子成像系统
TW201401330A (zh) * 2012-05-14 2014-01-01 Mapper Lithography Ip Bv 帶電粒子微影系統和射束產生器
US20160284505A1 (en) * 2015-03-25 2016-09-29 Hermes Microvision Inc. Apparatus of Plural Charged-Particle Beams
US20160336142A1 (en) * 2015-05-12 2016-11-17 Hermes Microvision Inc. Apparatus of Plural Charged-Particle Beams
WO2017053812A1 (en) * 2015-09-23 2017-03-30 Kla-Tencor Corporation Method and system for focus adjustment a multi-beam scanning electron microscopy system
US9922796B1 (en) * 2016-12-01 2018-03-20 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device

Also Published As

Publication number Publication date
JP2019536250A (ja) 2019-12-12
KR20190089963A (ko) 2019-07-31
JP6728498B2 (ja) 2020-07-22
US20180158642A1 (en) 2018-06-07
CN110214361A (zh) 2019-09-06
WO2018099854A1 (en) 2018-06-07
CN110214361B (zh) 2022-01-28
EP3549153A1 (en) 2019-10-09
TW201833968A (zh) 2018-09-16
KR102179897B1 (ko) 2020-11-19
US10453645B2 (en) 2019-10-22

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