CN110214361B - 用于检查样本的方法和带电粒子多束装置 - Google Patents

用于检查样本的方法和带电粒子多束装置 Download PDF

Info

Publication number
CN110214361B
CN110214361B CN201780074730.8A CN201780074730A CN110214361B CN 110214361 B CN110214361 B CN 110214361B CN 201780074730 A CN201780074730 A CN 201780074730A CN 110214361 B CN110214361 B CN 110214361B
Authority
CN
China
Prior art keywords
charged particle
lens
particle beam
primary charged
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780074730.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN110214361A (zh
Inventor
于尔根·弗洛森
彼得·克鲁伊特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Technische Universiteit Delft
Original Assignee
Applied Materials Israel Ltd
Technische Universiteit Delft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd, Technische Universiteit Delft filed Critical Applied Materials Israel Ltd
Publication of CN110214361A publication Critical patent/CN110214361A/zh
Application granted granted Critical
Publication of CN110214361B publication Critical patent/CN110214361B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10Lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • H01J2237/0451Diaphragms with fixed aperture
    • H01J2237/0453Diaphragms with fixed aperture multiple apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0475Changing particle velocity decelerating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10Lenses
    • H01J2237/103Lenses characterised by lens type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1534Aberrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1536Image distortions due to scanning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201780074730.8A 2016-12-01 2017-11-27 用于检查样本的方法和带电粒子多束装置 Active CN110214361B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/366,482 US10453645B2 (en) 2016-12-01 2016-12-01 Method for inspecting a specimen and charged particle multi-beam device
US15/366,482 2016-12-01
PCT/EP2017/080506 WO2018099854A1 (en) 2016-12-01 2017-11-27 Method for inspecting a specimen and charged particle multi-beam device

Publications (2)

Publication Number Publication Date
CN110214361A CN110214361A (zh) 2019-09-06
CN110214361B true CN110214361B (zh) 2022-01-28

Family

ID=60452669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780074730.8A Active CN110214361B (zh) 2016-12-01 2017-11-27 用于检查样本的方法和带电粒子多束装置

Country Status (7)

Country Link
US (1) US10453645B2 (enExample)
EP (1) EP3549153A1 (enExample)
JP (1) JP6728498B2 (enExample)
KR (1) KR102179897B1 (enExample)
CN (1) CN110214361B (enExample)
TW (1) TWI709992B (enExample)
WO (1) WO2018099854A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL277822B2 (en) * 2018-05-01 2024-08-01 Asml Netherlands Bv Multi-beam test rig
US10438769B1 (en) * 2018-05-02 2019-10-08 Kla-Tencor Corporation Array-based characterization tool
DE102018115012A1 (de) 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
TWI744671B (zh) * 2018-08-03 2021-11-01 日商紐富來科技股份有限公司 電子光學系統及多射束圖像取得裝置
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
US10784070B2 (en) * 2018-10-19 2020-09-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, field curvature corrector, and methods of operating a charged particle beam device
KR102677409B1 (ko) * 2019-05-31 2024-06-25 에이에스엠엘 네델란즈 비.브이. 다중 하전 입자 빔 장치 및 그 작동 방법
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
US10923313B1 (en) * 2019-10-17 2021-02-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method of operating a charged particle beam device
NL2024065B1 (en) * 2019-10-21 2021-06-22 Univ Delft Tech Multi-beam charged particle source with alignment means
WO2021078352A1 (en) * 2019-10-21 2021-04-29 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle beam device
TWI821618B (zh) * 2019-12-19 2023-11-11 荷蘭商Asml荷蘭公司 藉由多光束裝置執行以形成樣本之影像的方法及相關的多光束裝置
NL2024694B1 (en) * 2020-01-17 2021-09-08 Delmic Ip B V Apparatus and method for projecting an array of multiple charged particle beamlets on a sample
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement
KR20250144502A (ko) * 2020-02-21 2025-10-10 에이에스엠엘 네델란즈 비.브이. 검사 장치
EP3882951A1 (en) * 2020-03-19 2021-09-22 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
US11380511B2 (en) * 2020-03-24 2022-07-05 Fei Company Charged particle beam source
DE102020115183A1 (de) * 2020-06-08 2021-12-09 Carl Zeiss Multisem Gmbh Teilchenstrahlsystem mit Multiquellensystem
EP3937205A1 (en) * 2020-07-06 2022-01-12 ASML Netherlands B.V. Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method
EP4214736A2 (en) * 2020-09-17 2023-07-26 ASML Netherlands B.V. Charged particle assessment tool, inspection method
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter
WO2022136064A1 (en) 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device
US11705301B2 (en) * 2021-01-19 2023-07-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam manipulation device and method for manipulating charged particle beamlets
US11869743B2 (en) * 2021-05-11 2024-01-09 Kla Corporation High throughput multi-electron beam system
EP4095881A1 (en) * 2021-05-25 2022-11-30 ASML Netherlands B.V. Charged particle device
JP7680923B2 (ja) * 2021-09-16 2025-05-21 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams
JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
US20240212968A1 (en) * 2022-12-23 2024-06-27 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Lens for a charged particle beam apparatus, charged particle beam apparatus, and method of focusing a charged particle beam
CN118588522B (zh) * 2024-08-06 2024-11-08 北京惠然肯来科技中心(有限合伙) 用于带电粒子束装置的载物单元及相关产品
CN119517703B (zh) * 2024-11-15 2025-10-31 深圳后浪实验室科技有限公司 一种离子束聚焦系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1720445A (zh) * 2002-10-08 2006-01-11 应用材料以色列公司 使用x-射线发射以用于制程监控的系统及方法
CN101103417A (zh) * 2003-09-05 2008-01-09 卡尔蔡司Smt股份有限公司 粒子光学系统和排布结构,以及用于其的粒子光学组件
TW201527745A (zh) * 2013-12-02 2015-07-16 Ict積體電路測試股份有限公司 用於高產量電子束檢測(ebi)的多射束系統

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
DE60236302D1 (de) * 2002-12-17 2010-06-17 Integrated Circuit Testing Mehrachsige Verbundlinse, Strahlvorrichtung und Verfahren zur Anwendung dieser kombinierten Linse
EP1753010B1 (en) * 2005-08-09 2012-12-05 Carl Zeiss SMS GmbH Particle-optical system
JP5237734B2 (ja) 2008-09-24 2013-07-17 日本電子株式会社 収差補正装置および該収差補正装置を備える荷電粒子線装置
EP2676285B1 (en) * 2011-02-18 2015-05-20 Applied Materials Israel Ltd. Focusing a charged particle imaging system
CN104520968B (zh) * 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
NL2009053C2 (en) * 2012-06-22 2013-12-24 Univ Delft Tech Apparatus and method for inspecting a surface of a sample.
NL2012780B1 (en) * 2014-05-08 2016-02-23 Univ Delft Tech Apparatus and method for inspecting a sample using a plurality of charged particle beams.
US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9607805B2 (en) 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
KR102735949B1 (ko) * 2015-09-23 2024-11-28 케이엘에이 코포레이션 다중 빔 주사 전자 현미경 검사 시스템에서의 초점 조정을 위한 방법 및 시스템
US9984848B2 (en) * 2016-03-10 2018-05-29 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam lens device, charged particle beam device, and method of operating a multi-beam lens device
US9922796B1 (en) * 2016-12-01 2018-03-20 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1720445A (zh) * 2002-10-08 2006-01-11 应用材料以色列公司 使用x-射线发射以用于制程监控的系统及方法
CN101103417A (zh) * 2003-09-05 2008-01-09 卡尔蔡司Smt股份有限公司 粒子光学系统和排布结构,以及用于其的粒子光学组件
TW201527745A (zh) * 2013-12-02 2015-07-16 Ict積體電路測試股份有限公司 用於高產量電子束檢測(ebi)的多射束系統

Also Published As

Publication number Publication date
JP2019536250A (ja) 2019-12-12
KR20190089963A (ko) 2019-07-31
JP6728498B2 (ja) 2020-07-22
US20180158642A1 (en) 2018-06-07
CN110214361A (zh) 2019-09-06
TWI709992B (zh) 2020-11-11
WO2018099854A1 (en) 2018-06-07
EP3549153A1 (en) 2019-10-09
TW201833968A (zh) 2018-09-16
KR102179897B1 (ko) 2020-11-19
US10453645B2 (en) 2019-10-22

Similar Documents

Publication Publication Date Title
CN110214361B (zh) 用于检查样本的方法和带电粒子多束装置
CN110192263B (zh) 用于检查样本的方法、带电粒子束装置和多柱显微镜
JP7760008B2 (ja) 標本を検査する方法および荷電粒子ビーム装置
TWI650550B (zh) 用於高產量電子束檢測(ebi)的多射束裝置
EP3867941B1 (en) Field curvature corrector, charged particle beam device with this corrector, and methods of operating the charged particle beam device
JP6099113B2 (ja) ツインビーム荷電粒子ビームコラム及びその作動方法
CN112233960A (zh) 带电粒子束装置
CN115223831B (zh) 带电粒子束设备、多子束组件和检查样本的方法
TWI904734B (zh) 用於檢測樣本的方法及帶電粒子束裝置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant