JP6701360B2 - 電気回路構成要素のための劣化検出器、回路構成要素の劣化を監視する方法、素子、および制御器 - Google Patents
電気回路構成要素のための劣化検出器、回路構成要素の劣化を監視する方法、素子、および制御器 Download PDFInfo
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- 238000006731 degradation reaction Methods 0.000 title claims description 30
- 230000015556 catabolic process Effects 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 14
- 238000012544 monitoring process Methods 0.000 title claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 57
- 230000006866 deterioration Effects 0.000 claims description 35
- 238000011156 evaluation Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 230000004044 response Effects 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 6
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013100 final test Methods 0.000 description 2
- 231100001261 hazardous Toxicity 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 206010004966 Bite Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- G—PHYSICS
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- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Description
少なくとも1つの劣化特有のパラメータを決定するステップ、
対応するパラメータ特有の反応閾値を決定するステップ、
少なくとも、決定されたパラメータが反応閾値を超過したことに応答して反応をトリガするステップ、 反応閾値および/または反応を適合させるステップ、
決定されたパラメータを、反応閾値を決定するために使用し、および/または、反応閾値および/または反応を適合させるために使用するステップと、を含む。
PRS=Pinitial+0.9*ΔP
検査したパラメータ範囲を超過する前に運転時に早期に警告を行うことができるように倍率(例えば0.9)を決定することができる。
PRS=Pinitial *KF。
PRS=Pinitial+0.9*ΔP。
Claims (9)
- 回路構成要素(100,100−1,100−2)の劣化を監視するための、回路構成要素(100,100−1,100−2)のための評価ユニット(10)であって、
回路構成要素(100,100−1,100−2)の劣化特有のパラメータを検出するための少なくとも1つの入力部を含み、
少なくとも、前記劣化特有のパラメータが所定の反応閾値を超過したことに応答して反応をトリガするように構成されている評価ユニット(10)において、
前記評価ユニット(10)は、さらに、
前記回路構成要素の製造時の製造データを検出し、前記製造データを、前記反応閾値および/または前記反応を適合させるために使用するように構成されている、
ことを特徴とする評価ユニット(10)。 - 請求項1に記載の評価ユニット(10)において、
前記劣化特有のパラメータが、前記回路構成要素(100,100−1,100−2)の使用の頻度および/または継続時間である評価ユニット(10)。 - 請求項1または2に記載の評価ユニット(10)において、
前記評価ユニット(10)が少なくとも1つの出力部を含み、該出力部が前記回路構成要素(100,100−1,100−2)に電圧を印加するように構成されており、前記入力部が、電圧の印加に応答した電気抵抗を検出するように構成されている評価ユニット(10)。 - 請求項3に記載の評価ユニット(10)において、
前記電気抵抗が電気移動を監視するために使用される評価ユニット(10)。 - 請求項1または2に記載の評価ユニット(10)において、
前記評価ユニット(10)が少なくとも1つの出力部を含み、該出力部が前記回路構成要素(100,100−1,100−2)に電圧を印加するように構成されており、前記入力部が、電圧の印加に応答した閾電圧ドリフトを検出するように構成されている評価ユニット(10)。 - 請求項5に記載の評価ユニット(10)において、
前記閾電圧ドリフトが、MOSトランジスタの負のバイアスに基づいた温度不安定性効果(NBTI効果)を監視するために使用される評価ユニット(10)。 - 電子回路構成要素の劣化を監視する方法において、
少なくとも1つの劣化特有のパラメータを決定するステップと、
対応するパラメータ特有の反応閾値を決定するステップと、
少なくとも、決定されたパラメータが反応閾値を超過したことに応答して反応をトリガするステップと、
反応閾値および/または反応を適合させるステップと、
を備える方法において、
前記反応閾値および/または反応を適合させるステップが、回路構成要素の製造時の製造データを検出し、前記製造データを、反応閾値および/または反応を適合させるために使用することを特徴とする、
方法。 - 請求項1〜6のいずれか一項に記載の評価ユニット(10)を備える回路構成要素(100,100−1,100−2)。
- 請求項8に記載の回路構成要素(100,100−1,100−2)を備える車両のための制御器(200)。
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DE102016201596.6 | 2016-02-03 | ||
DE102016201596.6A DE102016201596A1 (de) | 2016-02-03 | 2016-02-03 | Alterungsdetektor für eine elektrische Schaltungskomponente, Verfahren zur Überwachung einer Alterung einer Schaltungskomponente, Bauelement und Steuergerät |
PCT/EP2017/050953 WO2017133891A1 (de) | 2016-02-03 | 2017-01-18 | Alterungsdetektor für eine elektrische schaltungskomponente, verfahren zur überwachung einer alterung einer schaltungskomponente, bauelement und steuergerät |
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EP (1) | EP3411724A1 (ja) |
JP (1) | JP6701360B2 (ja) |
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EP3928271A1 (de) * | 2019-03-28 | 2021-12-29 | Siemens Energy Global GmbH & Co. KG | Verfahren zum instandhalten einer elektrischen komponente |
DE102020200249A1 (de) | 2020-01-10 | 2021-07-15 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zum Betreiben eines Brennstoffzellensystems |
KR102480277B1 (ko) * | 2020-11-20 | 2022-12-22 | 두산에너빌리티 주식회사 | 관리 한계를 이용한 센서 유효성 검증 시스템 및 그 방법 |
SE2150281A1 (en) * | 2021-03-11 | 2022-09-12 | Ctek Sweden Ab | Method for detecting performance deterioration of components |
DE102021207800A1 (de) | 2021-07-21 | 2023-01-26 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren, Recheneinheit und Computerprogramm zum Einstellen eines Betriebsparameters in einer technischen Anlage |
CN115166462B (zh) * | 2022-07-04 | 2023-08-22 | 赖俊生 | 一种半导体芯片全生命周期持续检测方法、装置和设备 |
CN116203370A (zh) * | 2023-01-05 | 2023-06-02 | 重庆大学 | Mos型半导体器件的阈值电压稳定性测试方法、测试设备 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7853329B2 (en) * | 1998-08-05 | 2010-12-14 | Neurovista Corporation | Monitoring efficacy of neural modulation therapy |
US7292968B2 (en) | 2000-09-29 | 2007-11-06 | Cadence Design Systems, Inc. | Hot carrier circuit reliability simulation |
DE10161998A1 (de) | 2001-12-18 | 2003-07-17 | Daimler Chrysler Ag | Verfahren und Vorrichtung zur Betriebsüberwachung |
JP2007060886A (ja) | 2005-08-26 | 2007-03-08 | Hiromi Horii | 磁力線を利用した発電装置 |
JP2007060866A (ja) * | 2005-08-26 | 2007-03-08 | Mitsubishi Electric Corp | 車載用電動機制御装置 |
US20080275349A1 (en) * | 2007-05-02 | 2008-11-06 | Earlysense Ltd. | Monitoring, predicting and treating clinical episodes |
US7849426B2 (en) | 2007-10-31 | 2010-12-07 | International Business Machines Corporation | Mechanism for detection and compensation of NBTI induced threshold degradation |
US7961034B2 (en) | 2009-02-20 | 2011-06-14 | Oracle America, Inc. | Microprocessor performance improvement by dynamic NBTI compensation through transistor forward biasing |
EP2445405B1 (en) * | 2009-06-24 | 2018-06-13 | The Medical Research, Infrastructure, And Health Services Fund Of The Tel Aviv Medical Center | Automated near-fall detector |
CN201540337U (zh) * | 2009-10-19 | 2010-08-04 | 北京七星华创电子股份有限公司 | 一种传感器老化测试仪 |
US8248095B2 (en) * | 2009-10-30 | 2012-08-21 | Apple Inc. | Compensating for aging in integrated circuits |
US8330534B2 (en) | 2010-11-17 | 2012-12-11 | Advanced Micro Devices, Inc. | Circuit for negative bias temperature instability compensation |
CN102508139A (zh) * | 2011-09-30 | 2012-06-20 | 滨州市甘德电子科技有限公司 | Led芯片颗粒老化检测装置 |
JP5963860B2 (ja) * | 2012-06-14 | 2016-08-03 | 三菱電機株式会社 | パワーモジュールの劣化検知装置 |
JP5998739B2 (ja) * | 2012-08-20 | 2016-09-28 | 富士通株式会社 | レギュレータ装置 |
JP6210476B2 (ja) * | 2012-10-10 | 2017-10-11 | 公立大学法人首都大学東京 | 検査装置および検査方法 |
TWM463844U (zh) * | 2013-04-15 | 2013-10-21 | Alfa Power Co Ltd | 連續漏電偵測系統 |
US9483068B2 (en) * | 2013-04-19 | 2016-11-01 | Nvidia Corporation | Estimating and monitoring the effects of transistor aging |
EP2884663B1 (en) * | 2013-12-13 | 2017-02-22 | IMEC vzw | Restoring OFF-state stress degradation of threshold voltage |
CA2933843A1 (en) | 2013-12-16 | 2015-06-25 | Honda Motor Co., Ltd. | Driving system |
CN104297003B (zh) * | 2014-11-13 | 2017-03-08 | 成都运达科技股份有限公司 | 基于动态报警阈值的转向架旋转部件的故障监测方法 |
US9723415B2 (en) * | 2015-06-19 | 2017-08-01 | Gn Hearing A/S | Performance based in situ optimization of hearing aids |
CN105158670B (zh) | 2015-10-13 | 2018-04-17 | 中国人民解放军海军工程大学 | 基于集电极漏电流的igbt健康状态监测方法 |
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JP2019510964A (ja) | 2019-04-18 |
TWI718243B (zh) | 2021-02-11 |
CN108738353A (zh) | 2018-11-02 |
US20210199708A1 (en) | 2021-07-01 |
TW201730576A (zh) | 2017-09-01 |
WO2017133891A1 (de) | 2017-08-10 |
US11175331B2 (en) | 2021-11-16 |
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